CN101877599A - High frequency combination element device - Google Patents
High frequency combination element device Download PDFInfo
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- CN101877599A CN101877599A CN2010101745649A CN201010174564A CN101877599A CN 101877599 A CN101877599 A CN 101877599A CN 2010101745649 A CN2010101745649 A CN 2010101745649A CN 201010174564 A CN201010174564 A CN 201010174564A CN 101877599 A CN101877599 A CN 101877599A
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Abstract
The invention provides a kind of the minimizing and send the high frequency combination element device of signal to the leakage of received signal side.This high frequency combination element device comprises HF switch, this HF switch has the diode (DD2) of a side interarea that is installed on multilager base plate, the capacitor (DC5) that is made of conducting film and transmission line (DSL2) and is formed at the outer surface of multilager base plate in multilager base plate grounding electrode, diode (DD2) and capacitor (DC5) be connected with being connected of diode (DD2) and transmission line (DSL2) at least one connection directly connect by through hole.
Description
Technical field
The present invention relates to a kind of is the high frequency combination element device of main purpose with the signal that switches mobile phone etc.
Background technology
In the past, as this high frequency combination element device, disclose the three such high frequency combination element devices of corresponding type frequently of Figure 10 in patent documentation 1, though not shown, this high frequency combination element device is made of multilager base plate and chip components and parts.
Above-mentioned high frequency combination element device comprises HF switch, and in this HF switch, the switching that send to receive is undertaken by whether applying direct voltage to control terminal Vc1.Owing to control terminal Vc1 is not applied voltage when received signal, so diode DG1, DG2 be in cut-off state, and received signal is transmitted to receiver side terminal Rx from antenna terminal ANT.
When sending signal,, make diode DG1, DG2 be in conducting state by control terminal Vc1 is applied voltage.At this, the inductive component that diode DG2 is had and the capacitor CG6 of ground connection constitute resonance series, if be designed under the transmission frequency that sends signal, the impedance of transmission line LG2 is observed from transmitter side and is approached infinity, then sends signal and is not easy to be transferred to receiver side.
Diode DG2 and capacitor CG6 are installed on a side interarea of multilager base plate, and transmission line LG2 is formed in the multilager base plate.Diode DG2 realized by the cloth line electrode that is formed at multi-layer substrate surface and side with being connected mainly of transmission line LG2 with being connected with diode DG2 of capacitor CG6.
Patent documentation 1: the Japan Patent spy opens the 2004-7756 communique
But, realize with being connected of capacitor owing to constitute the diode of resonant circuit, so can produce inductive component in the cloth line electrode that the inductive component that this inductive component and diode had is connected in series with diode and being connected of transmission line by the cloth line electrode.Because in the LC series resonant circuit, the big more then impedance of inductive component is big more, so existence can make the insulation characterisitic of transmitter side and receiver side reduce, make the leakage increase such problem of signal towards the receiving circuit side that send.
Summary of the invention
For addressing the above problem, the objective of the invention is to reduce being connected and the be connected inductive component that produced of diode of diode and capacitor with transmission line.
High frequency combination element device of the present invention comprises HF switch, and this HF switch has: multilager base plate, this multilager base plate are by dielectric layer and conducting film is alternately laminated forms; Electrode, this electrode are formed at a side interarea of above-mentioned multilager base plate; Diode, this diode is installed on above-mentioned electrode; Capacitor and transmission line, this capacitor and transmission line adopt above-mentioned conducting film to form in above-mentioned multilager base plate; And grounding electrode, this grounding electrode is formed at the outer surface of above-mentioned multilager base plate, described high frequency combination element device is characterised in that, one of above-mentioned capacitor distolaterally is connected in above-mentioned grounding electrode, another distolateral anode that is connected in above-mentioned diode, the one distolateral negative electrode that is connected in above-mentioned diode of above-mentioned transmission line, above-mentioned diode and above-mentioned capacitor be connected with being connected of above-mentioned diode and above-mentioned transmission line at least one connection directly connect by through hole.
In addition, in the present invention, the above-mentioned electrode that above-mentioned diode is installed also can be the front end of the above-mentioned through hole that links to each other with a side interarea of above-mentioned multilager base plate.
In addition, in the present invention, comparatively it is desirable to, form in the projected area of above-mentioned diode of a side interarea on the stacked direction that at least a portion in the above-mentioned conducting film of above-mentioned capacitor and above-mentioned transmission line is configured in above-mentioned multilager base plate, that be installed on above-mentioned multilager base plate.
According to the present invention,, can provide a kind of inductive component, minimizing that reduces because of connecting wiring produces to send the high frequency combination element device of signal to the leakage of receiving circuit side by diode directly being connected with the element of regulation with through hole.
Description of drawings
Fig. 1 is the equivalent circuit diagram of first embodiment of high frequency combination element device of the present invention.
Fig. 2 is the key diagram of electrode shape of each sheet layer (ground floor from the bottom up～3rd layer) of the expression multilager base plate that is formed at first embodiment.
Fig. 3 is the key diagram of electrode shape of each sheet layer (the 4th layer～layer 6 from the bottom up) of the expression multilager base plate that is formed at first embodiment.
Fig. 4 is the key diagram of electrode shape of each sheet layer (layer 7 from the bottom up～9th layer) of the expression multilager base plate that is formed at first embodiment.
Fig. 5 is the key diagram of electrode shape of each sheet layer (from the bottom up the tenth layer and eleventh floor) of the expression multilager base plate that is formed at first embodiment.
Fig. 6 is the key diagram of electrode shape of each sheet layer (Floor 12 from the bottom up and the 13 layer) of the expression multilager base plate that is formed at first embodiment.
Fig. 7 is the cutaway view of major part of the multilager base plate of first embodiment.
Fig. 8 is the vertical view of installment state of lip-deep each circuit element of the multilager base plate of expression first embodiment.
Fig. 9 is the Tx-Rx insulation characterisitic figure of first embodiment and conventional example.
Figure 10 is the block diagram of the brief configuration of the existing high frequency combination element device of expression.
(symbol description)
31,33 SAW duplexers
41,45 HF switch
43,47 LC filters
49 shared devices
51,53 match circuits
71 multilager base plates
The ANT antenna terminal
850/900Tx, 1800/1900Tx transmitter side terminal
850Rx, 900Rx, 1800Rx, 1900Rx receiver side terminal
Vc1, Vc2 control terminal
Embodiment
Below, the embodiment to high frequency combination element device of the present invention describes with reference to accompanying drawing.
(first embodiment)
The high frequency combination element device of this first embodiment is the corresponding type of promptly so-called four frequencies corresponding to four systems, and its equivalent circuit diagram is shown in Figure 1.
With reference to Fig. 1, high frequency combination element device comprises the shared device 49 that connects by capacitor C3 from antenna terminal ANT.This shared device 49 is bifurcated into the signal path of DCS/PCS system (1800MHz/1900MHz) and the signal path of gsm system (850MHz/900MHz).The DCS/PCS system comprises first HF switch 41 that is connected in shared device 49, switches transmitter side and receiver side with this first HF switch 41.The transmitter side of above-mentioned first HF switch 41 is connected with a LC filter 43, also is connected with transmitter side terminal 1800/1900Tx by capacitor C1.The transmitter side of first HF switch 41 is connected with the input of SAW duplexer 31 by match circuit 51.Two outputs at this SAW duplexer 31 are connected with receiver side terminal 1800Rx and receiver side terminal 1900Rx respectively.
Equally, gsm system also comprises second HF switch 45, the 2nd LC filter 47, match circuit 53, SAW duplexer 33, transmitter side terminal 850/900Tx and receiver side terminal 850Rx etc.
Below, the equivalent electric circuit of first HF switch 41 is elaborated.Be bifurcated into two-way from shared device 49 to the connection of first HF switch 41.One the tunnel is connected in the anode of the diode DD1 that links to each other with transmitter side, and another road is connected in the end of the transmission line DSL2 that links to each other with receiver side.
The negative electrode of the diode DD1 that links to each other with transmitter side is connected in a LC filter 43.Diode DD1 is connected with the series circuit of inductance DSLt and capacitor DCt1 in parallel.In addition, the negative electrode of diode DD1 is connected with ground by inductance DSL1.
The other end of the transmission line DSL2 that links to each other with receiver side is connected in match circuit 51.Be connected with the negative electrode of diode DD2 between transmission line DSL2 and the match circuit 51, the anode of diode DD2 is by capacitor DC5 ground connection.The anode of diode DD2 also is connected with resistance R d, and the other end of resistance R d is by capacitor C5 ground connection.Be connected with control terminal Vc1 between resistance R d and the capacitor C5.By whether applying the switching that voltage sends received signal to control terminal Vc1.
As feature of the present invention, be that the element of diode and regulation directly is connected shown in Fig. 2 to Fig. 7 by through hole.
Fig. 2 to Fig. 6 is the exploded view of multilager base plate that constitutes the high frequency combination element device of first embodiment, is illustrated on each sheet layer that constitutes multilager base plate the electrode for capacitors that forms by silk screen printing etc., band electrode, through hole etc.Fig. 2 to Fig. 6 is from a figure side opposite with the side interarea that components and parts such as capacitor, diode are installed, that observe as the opposite side interarea of bottom surface.
Multilager base plate will be stacked by the sheet material that the pottery that with barium monoxide, aluminium oxide, silicon dioxide is principal component constitutes, and form by burning till under the temperature below 1000 ℃.
Be formed with various outside terminal for connecting electrodes at the first sheet layer 61a.Be formed with grounding electrode G1 at the second sheet material 61b, be formed with electrode DC5a, be formed with grounding electrode G2 at the 4th sheet layer 61d at the 3rd sheet layer 61c.The electrode DC5a of the 3rd sheet layer 61c constitutes capacitor DC5 with grounding electrode G1, G2.
Be formed with electrode DSL2a～DSL2e of transmission line DSL2 at the 5th sheet layer 61e～the 9th sheet layer 61i.Be formed with antenna electrode ANT at the tenth sheet layer 61j, be formed with grounding electrode G3 at the 11 sheet layer 61k.Be formed with the wiring pattern of regulation at the 12 sheet layer 61l.
The surface of the 13 sheet layer 61m is the surface of multilager base plate as shown in Figure 8, is formed with various terminal for connecting electrodes.In addition, SAW duplexer 31, SAW duplexer 33, diode DD1 and diode DD2 are arranged, inductance DSL1, inductance DSLt, capacitor DCt1 and resistance R d also are installed in addition in its mounted on surface.
Fig. 7 constitutes the originally cutaway view of the major part of the multilager base plate of the high frequency combination element device of first embodiment.Diode DD2 is installed in terminal for connecting electrode DD2a, the DD2b that is formed at multi-layer substrate surface.The end that is formed at electrode DSL2a～DSL2e adjacent electrode between sheet layer of the 5th sheet layer 61e～the 9th sheet layer 61i connects with through hole separately from each other, forms transmission line DSL2.Transmission line DSL2 one distolateral, be that the end of electrode DSL2e is connected in the terminal for connecting electrode DD2a that diode DD2 is installed by coupling part A.Though not shown, another of transmission line DSL2 be distolateral, be that the end of DSL2a is connected in shared device 49.
Capacitor DC5 one distolateral, be that electrode DC5a is connected in the terminal for connecting electrode DD2b that diode DD2 is installed by coupling part B.Another of capacitor DC5 be distolateral, be that grounding electrode G1, G2 are connected to each other by through hole, be connected by the grounding electrode of through hole then with the outer surface that is formed at multilager base plate.
Coupling part A is that the through hole of each layer that is formed at the tenth sheet layer 61j～the 13 sheet layer 61m is directly connected to each other and constitute.Coupling part B is that the through hole of each layer that is formed at the 4th sheet layer 61d～the 13 sheet layer 61m is directly connected to each other and constitute.
Here we can see that, the coupling part B of the coupling part A of diode DD2 shown in the equivalent circuit diagram of Fig. 1 and transmission line DSL2 and diode DD2 and capacitor DC5 is coupling part A and the coupling part B of Fig. 2 to Fig. 7, and is directly connecting and composing by through hole.
Coupling part A among Fig. 7 and coupling part B are diode DD2 and the coupling part A of transmission line DSL2 and the coupling part B of diode DD2 and capacitor DC5 shown in the equivalent circuit diagram of Fig. 1, and expression directly connects by through hole.The symbol A of Fig. 2 to Fig. 6 and symbol B too, the coupling part A shown in the equivalent circuit diagram of presentation graphs 1 directly is connected by through hole with coupling part B.Therefore, connect distance and shorten, can reduce the inductive component that is produced.
In addition, in an embodiment, because the part of the part of transmission line DSL2 and transducer DC5 is disposed in the projected area of the diode DD2 on the stacked direction of multilager base plate, the therefore size that can dwindle high frequency combination element device.The effect of present embodiment can be illustrated in the action of first HF switch 41.When utilizing antenna terminal ANT to receive the received signal of DCS/PCS system (1800MHz/1900MHz), this received signal is branched to first HF switch 41 as the signal path of DCS/PCS system by shared device 49.At this moment, control terminal Vc1 is not applied voltage.Therefore, diode DD1, DD2 are in cut-off state, and signal transmits to receiver side terminal 1800Rx, 1900Rx by match circuit 51 and SAW duplexer 31.
Then, describe utilizing antenna terminal ANT to send from the situation that sends the transmission signal of side terminal 1800/1900Tx.By control terminal Vc1 is applied positive voltage, make diode DD1, DD2 become conducting state.The current value that flows through diode can be controlled by the resistance value of resistance R d.
When diode DD2 conducting, inductive component that this diode DD2 is had and capacitor DC5 constitute series circuit, the resonance frequency with a certain frequency.The value of diode DD2 and capacitor DC5 is configured to make above-mentioned resonance series frequency consistent with the frequency that sends signal.By this, the A point as the negative electrode of diode DD2 is in ground state under the frequency that sends signal.And, be made as 1/4 of the wavelength X that sends signal by circuit length with transmission line DSL2, under the frequency that sends signal, can make impedance infinity, thereby can realize insulating to the height of Rx from Tx from the observed receiver side of transmitter side.At this,, therefore can reduce deviation at the inductive component of coupling part generation because the connection from diode DD2 to the regulation element is that coupling part A is connected by the direct of through hole with coupling part B.Be connected in series with inductive component that diode DD2 is had owing to be created in the inductive component of coupling part, therefore reduce, make the resonance series frequency stabilization, thereby stably realize insulating to the height of Rx from Tx by the deviation that makes above-mentioned total inductive component.
In addition, by the direct connection of through hole, the inductive component self that produces in the coupling part is reduced.Therefore, in the LC series circuit that constitutes by diode DD2 and capacitor DC5,, can reduce inductive component, thereby can increase capacitive component value being set for when making resonance frequency consistent with the frequency that sends signal.
Inductive component reduces by making, capacitive component increases, and the impedance of the LC series resonant circuit under resonance frequency is reduced.The insulation characterisitic figure of Fig. 9 represents this effect.Fig. 9 is the figure of insulation characterisitic of match circuit 51 input parts of expression transmitter side Tx and receiver side SAW duplexer 31.Fig. 9 (a) is diode DD2 resulting performance plot of present embodiment when directly being connected by through hole with the coupling part B of capacitor DC5 with diode DD2 with the coupling part A of transmission line DSL2.Fig. 9 (b) is the performance plot of above-mentioned part conventional example when connecting by the cloth line electrode.
In Fig. 9, transverse axis is represented frequency, and unit is GHz.The longitudinal axis represents that unit is dB from the receiver side terminal 1800Rx of transmitter side terminal 1800/1900Tx observation, the attenuation of 1900Rx.
The point m1 of Fig. 9 (a), m2, m3 are illustrated in the measurement result under 1.72GHz, 1.78GHz, the 1.92GHz, be respectively-34.1dB ,-34.8dB ,-31.0dB.The point m11 of Fig. 9 (b), m12, m13 are illustrated in the measurement result under 1.72GHz, 1.78GHz, the 1.92GHz equally, be respectively-24.4dB ,-28.0dB ,-20.9dB.
Attenuation among Fig. 9 (a) is bigger than the attenuation among Fig. 9 (b), and after comparing, obviously, the direct-connected insulation characterisitic of through hole gets a promotion.In addition, diode DD2 is installed in the electrode that is formed at a side interarea, also can directly be installed on the above-mentioned through hole that links to each other with a side interarea.
In addition, high frequency combination element device of the present invention is not limited to the four such high frequency combination element devices of corresponding type frequently of the foregoing description, even also can obtain same effect in the high frequency combination element device of the above frequently multifrequency correspondence type of the high frequency combination element device, four of corresponding type frequently three.
Claims (3)
1. high frequency combination element device, it comprises HF switch, this HF switch has: multilager base plate, this multilager base plate are by dielectric layer and conducting film is alternately laminated forms; Electrode, this electrode are formed at a side interarea of described multilager base plate; Diode, this diode is installed on described electrode; Capacitor and transmission line, this capacitor and transmission line adopt described conducting film to form in described multilager base plate; And grounding electrode, this grounding electrode is formed at the outer surface of described multilager base plate, it is characterized in that,
One of described capacitor distolaterally is connected in described grounding electrode, another distolateral anode that is connected in described diode, and a distolateral negative electrode that is connected in described diode of described transmission line,
Described diode and described capacitor be connected and in being connected of described diode and described transmission line, at least one connects by through hole with direct connection.
2. high frequency combination element device as claimed in claim 1 is characterized in that,
The described electrode that described diode is installed is the front end of the described through hole that links to each other with a side interarea of described multilager base plate.
3. high frequency combination element device as claimed in claim 1 or 2 is characterized in that,
On the stacked direction of described multilager base plate and be installed in the projected area of described diode of a side interarea of described multilager base plate, configuration forms at least a portion in the described conducting film of described capacitor and described transmission line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-111084 | 2009-04-30 | ||
| JP2009111084A JP5168505B2 (en) | 2009-04-30 | 2009-04-30 | High frequency composite parts |
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| Publication Number | Publication Date |
|---|---|
| CN101877599A true CN101877599A (en) | 2010-11-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101745649A Pending CN101877599A (en) | 2009-04-30 | 2010-04-28 | High frequency combination element device |
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| JP (1) | JP5168505B2 (en) |
| CN (1) | CN101877599A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101902212A (en) * | 2009-05-26 | 2010-12-01 | 株式会社村田制作所 | High-frequency model |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103430457B (en) | 2011-03-24 | 2015-05-13 | 株式会社村田制作所 | High frequency module |
| WO2015008558A1 (en) * | 2013-07-16 | 2015-01-22 | 株式会社村田製作所 | Front end circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004282623A (en) * | 2003-03-18 | 2004-10-07 | Kyocera Corp | Transmitting/receiving control apparatus |
| CN101268621A (en) * | 2005-09-26 | 2008-09-17 | 株式会社村田制作所 | High frequency front-end module and duplexer |
| CN101291009A (en) * | 2007-04-16 | 2008-10-22 | 深圳市安泰信电子有限公司 | Microwave switch system of multiple paths and implementing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3642062B2 (en) * | 2003-07-03 | 2005-04-27 | 日立金属株式会社 | High frequency switch |
| JP2005277515A (en) * | 2004-03-23 | 2005-10-06 | Kyocera Corp | Antenna switching circuit device |
| JP4487256B2 (en) * | 2004-11-25 | 2010-06-23 | 日立金属株式会社 | High frequency switch |
| JP4485982B2 (en) * | 2005-03-29 | 2010-06-23 | 京セラ株式会社 | High frequency switching module and wireless communication device |
-
2009
- 2009-04-30 JP JP2009111084A patent/JP5168505B2/en not_active Expired - Fee Related
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- 2010-04-28 CN CN2010101745649A patent/CN101877599A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004282623A (en) * | 2003-03-18 | 2004-10-07 | Kyocera Corp | Transmitting/receiving control apparatus |
| CN101268621A (en) * | 2005-09-26 | 2008-09-17 | 株式会社村田制作所 | High frequency front-end module and duplexer |
| CN101291009A (en) * | 2007-04-16 | 2008-10-22 | 深圳市安泰信电子有限公司 | Microwave switch system of multiple paths and implementing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101902212A (en) * | 2009-05-26 | 2010-12-01 | 株式会社村田制作所 | High-frequency model |
| US8334731B2 (en) | 2009-05-26 | 2012-12-18 | Murata Manufacturing Co., Ltd. | High-frequency module |
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| Publication number | Publication date |
|---|---|
| JP5168505B2 (en) | 2013-03-21 |
| JP2010263311A (en) | 2010-11-18 |
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Application publication date: 20101103 |