CN101872803A - Plasma etching method for showing defect of cadmium zinc telluride infrared substrate - Google Patents

Plasma etching method for showing defect of cadmium zinc telluride infrared substrate Download PDF

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CN101872803A
CN101872803A CN201010182276A CN201010182276A CN101872803A CN 101872803 A CN101872803 A CN 101872803A CN 201010182276 A CN201010182276 A CN 201010182276A CN 201010182276 A CN201010182276 A CN 201010182276A CN 101872803 A CN101872803 A CN 101872803A
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etching
substrate
infrared
sample
defect
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CN101872803B (en
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叶振华
尹文婷
王建新
方维政
杨建荣
陈昱
林春
胡晓宁
丁瑞军
何力
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Shanghai Institute of Technical Physics of CAS
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Abstract

The invention discloses a plasma etching method for showing defect of a cadmium zinc telluride (CZT) infrared substrate, and relates to the material testing technology of the photoelectric probe. The plasma etching method adopts the technical scheme that the defect of the infrared CZT substrate is shown by enhancing the reactive ion etching (RIE) with high-density low-energy inductively coupled plasma (ICP), so the method skillfully utilizes the accuracy controllability of the etching rate of the ICP-enhanced RIE and the inconsistency at a normal region and a defective region of the infrared CZT substrate and thus effectively solves the problems of uncontrollable substrate removal rate and blurred outline of the defect existing in a conventional defect showing method. The method has the characteristics of simple process, high stability and clear showing.

Description

A kind of method for etching plasma that manifests defect of cadmium zinc telluride infrared substrate
Technical field
The present invention relates to the detection technique of photoelectric detector material, specifically be meant the defective process for show of the infrared backing material of photaesthesia element chip of infrared focal plane array device.
Background technology
Infrared focal plane array device is not only to have had the imaging sensor that infrared information obtained but also had the advanced person of the information processing function, has important in military, civilian fields such as earth observation from space, electrooptical countermeasures, robot vision, Search/Track, medical and industrial thermal imaging and guided missile precise guidances and uses widely.Because its irreplaceable status and effect, the big state of key industry in the world all classifies the infrared focal plane array device technology of preparing as give priority to high technology item.
Under the driving energetically of senior infrared application system, it is the important development stage of the third generation infrared focal plane detector of characteristics that infrared detection technique has entered with big face battle array, miniaturization and multicolor etc., sees S.Horn, P.Norton, T.Cincotta, A.Stoltz, et al, " Challenges for third-generation cooledimagers ", proceeding of SPIE, Vol.5074,2003, P44-51.The high-resolution of senior infrared imaging is surveyed and is forced the development of infrared focal plane detector of new generation to big face battle array, trend toward miniaturization, requires the pixel dimension of infrared acquisition photaesthesia unit array constantly to dwindle.This must reduce the defect concentration of infrared tellurium zinc cadmium (CZT) substrate and corresponding mercury cadmium telluride (HgCdTe) epitaxial material, to reduce high density statuette elemental size Infrared Detectors blind element rate to infrared focal plane photovoltaic detector.
For this reason, the defect concentration that how to suppress infrared tellurium zinc cadmium substrate and corresponding HgCdTe epitaxial material is the research emphasis in Infrared Detectors field.And the key of launching this class research is to obtain a kind of reliable defective process for show.Usually adopt the wet-chemical etching method, manifest the defect situation of infrared tellurium zinc cadmium substrate and HgCdTe epitaxial material.But there is the deficiency that corrosion depth is uncontrollable, the profile water caltrop is fuzzy in the defective process for show of wet-chemical etching.
Summary of the invention
Based on the problem that the defective process for show of the infrared substrate of above-mentioned existing infrared focal plane array device photaesthesia chip exists, the purpose of this invention is to provide a kind of substrate and remove accurately controlled, the infrared clearly substrate defects process for show of defect profile water caltrop of the degree of depth.
For achieving the above object, the present invention adopts high density, low-energy technical scheme of inducing coupled plasma (ICP) intensified response ion etching (RIE) method to manifest infrared CZT substrate defects.
The inventive method is to strengthen on the RIE equipment at the up-to-date technology product ICP of microelectronic to carry out.This equipment comprises: the cavity 5 of band vacuum system 1 is equipped with the RF source 2 of controlling the plasma etching energy from bottom to top, the sample stage 3 of band temperature-controlling system in cavity, following air inlet coil 7, produce the RF source 6 of plasma density, last air inlet coil 8, cavity 5 sidewalls have watch window 501.When etching, etching sample 4 is fixed on the temperature control sample stage 3, and can come the etching situation of Real Time Observation sample by watch window 501.
In the present invention, because ICP strengthens RIE there are obvious selectivity in infrared CZT substrate normal region and defect area, cause etching technics very inconsistent at the etch rate of normal region and defect area, thus clear the manifesting of realizing infrared CZT substrate defects, dislocation and field trash etc.Simultaneously, the etch rate of the ICP of infrared CZT substrate enhancing RIE is controlled, helps observing dislocation in vertical, the horizontal sign of migrating characteristic of substrate.
Technical solution of the present invention is as follows:
A. sample cleans: place trichloroethylene, acetone and three kinds of organic solvents of alcohol of 65 ℃ to clean respectively in CZT substrate etching sample 4.
B. use vacuum grease that CZT substrate etching sample 4 is sticked on the etching sample stage, then carry out vacuumizing of cavity, reach set point until vacuum degree, as 3 * 10 -5Torr.
The ICP of C.CZT substrate etching sample 4 strengthens the process gas of RIE and selects CH for use 4, N 2And Ar, proportioning is 1-3: 3-8: 15-30, and makes N wherein 2, Ar enters cavity 5 from last air inlet coil 8, and CH 4Enter cavity 5 from following air inlet coil 7.
D. plasma etching power is 300-800W, and the RF power of control plasma etching energy is 5-30W, and chamber pressure is 3-8 * 10 -3Torr, the sample stage temperature is 10-30 ℃.
Great advantage of the present invention is: this defective process for show has used ICP to strengthen the accurate controllability of RIE etch rate dexterously, and in the inconsistency of infrared CZT substrate normal region and defect area, be the etching selectivity, have substrate and remove the accurately controlled and defect profile water caltrop of degree of depth characteristics clearly.
Description of drawings
Fig. 1 is that ICP strengthens RIE device structure schematic diagram.
Fig. 2 is scanning electron microscopy (SEM) pattern that ICP strengthens RIE etching sample.
Embodiment
See Fig. 1, the present invention uses Britain OXFORD company model to strengthen RIE equipment as the ICP of ICP65-80Plus.This equipment comprises: the cavity 5 of band vacuum system 1 is equipped with the RF source 2 of controlling the plasma etching energy from bottom to top, the sample stage 3 of band temperature-controlling system, following air inlet coil 7, the RF source 6 that produces plasma density, last air inlet coil 8 in cavity.When etching, etching sample 4 is fixed on the temperature control sample stage 3, and can come the etching situation of Real Time Observation sample by watch window 501.
We are with Cd 1-xZn xTe (x=0.04) epitaxial material is a sample, and method of the present invention is described in further detail:
A. sample cleans: place trichloroethylene, acetone and three kinds of organic solvents of alcohol of 65 ℃ to clean respectively CZT substrate sample 4.
B. use vacuum grease that CZT substrate sample 4 is sticked on the etching sample stage 3, then carry out vacuumizing of cavity 5, reach set point until vacuum degree, as 3 * 10 -5Torr.
C. the process gas selected for use of etching is CH 4/ N 2/ Ar, proportioning is 1.5: 5: 20; And make wherein N 2/ Ar enters cavity 5 from last air inlet coil 8, and CH 4Enter cavity 5 from following air inlet coil 7, chamber pressure is 5 * 10 -3Torr.
D. plasma etching power is 500W, and control plasma etching energy is 20W, and the sample stage temperature is 20 ℃, and characterize the plasma etching energy the etching state parameter---Dc bias is shown as 45V.
In order to obtain the ICP enhancing RIE technology that infrared CZT substrate defects manifests, except selecting technological parameters such as suitable ICP power, RF power and process gas kind, also to select suitable technological parameters such as process gas ratio, chamber pressure and sample temperature.For example, the too high levels of CH4 gas can cause etching surface very coarse, and the excessive etching product that also can occur of chamber pressure can not in time be drawn out of and cause bulk deposition, and influences follow-up etching.In a word, the ICP of infrared backing material enhancing RIE technology is very complicated technical process.Above-mentioned process conditions are through repeatedly experiment, the best implementation method that draws, and the sample etching surface that obtains cleans and is smooth very much, and the defect profile that manifests is clear.Fig. 2 is the pattern of sample surfaces dislocation, and Fig. 3 is the pattern of sample surfaces field trash.
Pass through DEKTAK 3The step instrument is measured, and the etch rate that obtains above-mentioned condition is Shown in Fig. 2,3, profile water caltrops such as the dislocation of sample surfaces, surface inclusion are very clear, show that above-mentioned condition has reached substrate and removed controlled, the defect profile water caltrop requirement clearly of speed.It is rational, feasible that the defective process for show of this technical scheme is adopted in this explanation.

Claims (1)

1. method for etching plasma that manifests defect of cadmium zinc telluride infrared substrate is characterized in that may further comprise the steps:
A. sample cleans: place trichloroethylene, acetone and three kinds of organic solvents of alcohol of 65 ℃ to clean respectively in CZT substrate etching sample (4);
B. use vacuum grease that CZT substrate etching sample (4) is sticked on the etching sample stage, then carry out vacuumizing of cavity, reach set point 3 * 10 until vacuum degree -5Torr;
The ICP of C.CZT substrate etching sample (4) strengthens the process gas of RIE and selects CH for use 4, N 2And Ar, proportioning is 1-3: 3-8: 15-30, and makes N wherein 2, Ar enters cavity (5) from last air inlet coil (8), and CH 4Enter cavity (5) from following air inlet coil (7);
D. plasma etching power is 300-800W, and the RF power of control plasma etching energy is 5-30W, and chamber pressure is 3-8 * 10 -3Torr, the sample stage temperature is 10-30 ℃.
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102586890A (en) * 2012-03-20 2012-07-18 北京大学 Device for preparing black silicon
CN103560166A (en) * 2013-10-17 2014-02-05 西北工业大学 Method for packaging cadmium zinc telluride pixel detector module
CN104616973A (en) * 2014-12-26 2015-05-13 上海华虹宏力半导体制造有限公司 Silicon wafer indenture defect strengthening method and semiconductor manufacturing method
CN106546619A (en) * 2016-11-24 2017-03-29 中国电子科技集团公司第十研究所 A kind of grinding and polishing damage measure method of cadmium-zinc-teiluride base mercury cadmium telluride thin film
CN107192660A (en) * 2017-05-27 2017-09-22 中国科学院上海技术物理研究所 It is a kind of to be used for the apparatus and method that dynamic observes Cdl-x_Znx_Te chemical attack hole
CN108682637A (en) * 2018-05-21 2018-10-19 陈涛 A kind of semiconductor chip plasma etching machine
CN110289215B (en) * 2019-06-25 2022-02-08 上海大学 Inductive coupling plasma etching process method of cadmium zinc telluride crystal

Citations (3)

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Publication number Priority date Publication date Assignee Title
US6524966B1 (en) * 1997-05-28 2003-02-25 Sandia National Laboratories Surface treatment and protection method for cadmium zinc telluride crystals
CN101092748A (en) * 2007-06-05 2007-12-26 西北工业大学 Method for preparing Te-Zn-Cd monocrystal in large volume
US20090305459A1 (en) * 2008-06-05 2009-12-10 Ues, Inc. Methods of Splitting CdZnTe Layers from CdZnTe Substrates for the Growth of HgCdTe

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524966B1 (en) * 1997-05-28 2003-02-25 Sandia National Laboratories Surface treatment and protection method for cadmium zinc telluride crystals
CN101092748A (en) * 2007-06-05 2007-12-26 西北工业大学 Method for preparing Te-Zn-Cd monocrystal in large volume
US20090305459A1 (en) * 2008-06-05 2009-12-10 Ues, Inc. Methods of Splitting CdZnTe Layers from CdZnTe Substrates for the Growth of HgCdTe

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Title
《Journal of Electronic Materials》 19971231 ROBERT C.KELLER,etc Surface Cleaning and Etching of CdZnTe and CdTe in H2/Ar,CH4/H2/Ar,and CH4/H2/N2/Ar Electron Cyclotron Resonance Plasmas 542-550 第26卷, 第6期 2 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102586890A (en) * 2012-03-20 2012-07-18 北京大学 Device for preparing black silicon
CN103560166A (en) * 2013-10-17 2014-02-05 西北工业大学 Method for packaging cadmium zinc telluride pixel detector module
CN103560166B (en) * 2013-10-17 2015-10-07 西北工业大学 The method for packing of tellurium-zinc-cadmium pixel detector module
CN104616973A (en) * 2014-12-26 2015-05-13 上海华虹宏力半导体制造有限公司 Silicon wafer indenture defect strengthening method and semiconductor manufacturing method
CN106546619A (en) * 2016-11-24 2017-03-29 中国电子科技集团公司第十研究所 A kind of grinding and polishing damage measure method of cadmium-zinc-teiluride base mercury cadmium telluride thin film
CN107192660A (en) * 2017-05-27 2017-09-22 中国科学院上海技术物理研究所 It is a kind of to be used for the apparatus and method that dynamic observes Cdl-x_Znx_Te chemical attack hole
CN107192660B (en) * 2017-05-27 2023-09-12 中国科学院上海技术物理研究所 Device and method for dynamically observing tellurium-zinc-cadmium material chemical corrosion pits
CN108682637A (en) * 2018-05-21 2018-10-19 陈涛 A kind of semiconductor chip plasma etching machine
CN108682637B (en) * 2018-05-21 2020-10-13 深圳市希迈科科技有限公司 Semiconductor chip plasma etching machine
CN110289215B (en) * 2019-06-25 2022-02-08 上海大学 Inductive coupling plasma etching process method of cadmium zinc telluride crystal

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