CN101868104A - Ballast device - Google Patents
Ballast device Download PDFInfo
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- CN101868104A CN101868104A CN200910137427A CN200910137427A CN101868104A CN 101868104 A CN101868104 A CN 101868104A CN 200910137427 A CN200910137427 A CN 200910137427A CN 200910137427 A CN200910137427 A CN 200910137427A CN 101868104 A CN101868104 A CN 101868104A
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Abstract
The invention discloses a ballast device. The ballast device comprises a ballast and a sweep frequency pre-heating circuit, wherein the ballast is provided with two input ends and one output end; the output end is electrically connected with a fluorescent lamp; the ballast also comprises a power module for providing direct current power; the sweep frequency pre-heating circuit comprises a boosting element, an impedance element, a switch and a frequency selection circuit; one end of the boosting element is electrically connected with the power module, while the other end is connected with one end of the impedance element; the other end of the impedance element is grounded; the switch is provided with an input end and an output end; the input end is electrically connected with the common connection point of the boosting element and the impedance element; the output end is connected with the frequency selection circuit; and the frequency selection circuit is electrically connected with the two input ends of the ballast.
Description
Technical field
The present invention relates to a kind of ballast device, in particular to a kind of electronic ballast device.
Background technology
Compare with incandescent lamp bulb,, promptly replaced incandescent lamp bulb, and then become the main flow of present industry and domestic lighting because fluorescent lamp has higher luminous efficiency, low lamp hole temperature and long advantages such as useful life.
Be full of the mist that is made of low-pressure inert gas such as low-pressure mercury vapour and argon gas, krypton gas in the fluorescent tube, fluorescent tube inner tubal wall coating fluorescent material is provided with the heater winding of being made by tungsten at the two ends of fluorescent tube.Behind power connection, when electric current is heated to sufficient temp by filament, will produce and discharge electronics, electronics can become the electricity slurry to gas in the pipe, and intraductal electric current is strengthened.After the voltage between the filament of two ends surpasses certain value, fluorescent tube begins to produce discharge, mercury vapour clashes into mutually in the electronics of high-speed motion and the pipe, more electronics and ion will dissociate, generation is the ultraviolet ray of 253.7nm and 185nm based on the wavelength of mercury vapour, the fluorescent material of fluorescent tube inner surface will absorb ultraviolet ray, and discharge the visible light of low wavelength.
Because presenting negative resistance (Negative Incremental Resistance) characteristic, fluorescent lamp (makes after more multiple current flows to fluorescent tube that promptly more gases are ionized, make the conducting resistance in the pipe constantly reduce), electric current in the fluorescent tube is constantly increased, therefore, need ballast to come Control current to fixing horizontal value, to reach best discharge condition.
The general mode that starts fluorescent lamp can be instantaneous starting and pipeline start up by preheating.Instantaneous starting is to utilize the high voltage startup fluorescent tube, and its starting resistor is approximately between 800V to 1, between the 200V, though it is very easy to light a lamp, but easily cause the fluorescent tube melanism, filament breaking, lamp tube service life reduces, and its some number of times that goes out is about 6,000 time, average life span is about 4,000 hours.Pipeline start up by preheating then is to give earlier filament pre-heating or heat, and its greatest feature can alleviate the fluorescent tube melanism, thereby the life-span of prolonging lamp tube was promoted to the fluorescent tube average life span 8,000 times, 20,000 hours for not being subjected to the go out influence of number of times of fluorescent tube switching point.And the pipeline start up by preheating mode can be divided into frequency hopping pipeline start up by preheating and frequency sweep pipeline start up by preheating, and wherein, the frequency sweep pipeline start up by preheating is better than the frequency hopping pipeline start up by preheating again for the prolongation of lamp tube service life.
Yet traditional frequency sweep preheat circuit framework is too complicated, and devices such as needed Zener diode, bipolar transistor, resistance and electric capacity are too much.Therefore, under the situation that the frequency sweep preheat function remains unchanged, simplify and improvement frequency sweep preheat circuit,, just become an important problem to reduce the assembly cost.
Summary of the invention
The object of the present invention is to provide a kind of ballast device, it has reduced the complexity of preheat circuit framework under the situation that the frequency sweep preheat function remains unchanged.
As described in one embodiment of the invention, a kind of ballast device provided by the invention comprises ballast and frequency sweep preheat circuit.Wherein, ballast has a first input end, second input and an output, and the output of ballast is electrically connected to fluorescent lamp, and ballast also comprises power module, is used to provide DC power supply.The frequency sweep preheat circuit comprises the element that boosts, impedance component, switch and frequency selective network.The described element that boosts has one first end and one second end, the first end electric connection of power supply module wherein, and second end and an impedor end join, and the impedor other end is ground connection then.Switch has an input and an output, and wherein input is electrically connected to boost element and impedor common joint, and output then joins with frequency selective network.Frequency selective network connects ballast.
In sum, the electronic devices and components that ballast device of the present invention adopts are few, and circuit framework is simple, can realize fluorescent lamp is carried out the function of frequency sweep preheating.
Description of drawings
Fig. 1 is the high-level schematic functional block diagram of ballast device of the present invention.
Fig. 2 a is embodiment one circuit diagram of the frequency sweep preheat circuit in the ballast device of the present invention.
Fig. 2 b is embodiment two circuit diagrams of the frequency sweep preheat circuit in the ballast device of the present invention.
Fig. 2 c is the embodiment three-circuit figure of the frequency sweep preheat circuit in the ballast device of the present invention.
Embodiment
In order to make narration of the present invention more detailed and complete, can be with reference to accompanying drawing and the following stated specific embodiment, identical numbering is represented same or analogous assembly among the figure.On the other hand, for the assembly that those skilled in the art were familiar with is not described in the specific embodiment, with the restriction of avoiding causing the present invention unnecessary.
Fig. 1 is the functional block diagram of the ballast device in the present invention's one specific embodiment.As shown in Figure 1, ballast device 100 comprises ballast 200 and frequency sweep preheat circuit 300.Wherein, ballast 200 has a first input end (iput1), second input (iput2) and an output (output), and described output is electrically connected to fluorescent lamp 400.Ballast 200 also comprises power module 210, is used to provide DC power supply.Frequency sweep preheat circuit 300 comprises the element 310 that boosts, impedance component 320, switch 330 and frequency selective network 340.The element 310 that wherein boosts has one first end and one second end, and wherein an end of first end electric connection of power supply module 210, the second ends and impedance component 320 joins, and the other end of impedance component 320 is ground connection then.Switch 330 has an input and an output, and wherein input is electrically connected the common joint of boost element 310 and impedance component 320, and output then joins with frequency selective network 340.Frequency selective network 340 connects ballast 200.
Embodiment one:
Fig. 2 a is the circuit diagram of first kind of frequency sweep preheat circuit 300 of the embodiment of the invention.Shown in Fig. 2 a, the element 310 that boosts comprises an electric capacity 312 at least.And impedance component 320 comprises a resistance 322 at least.Switch 330 is made up of a NPN bipolar transistor 332a and a base resistance 334, and wherein an end of base resistance 334 is electrically connected the base stage of NPN bipolar transistor 332a, and the other end then is electrically connected the common joint place of resistance 322 and electric capacity 312.Frequency selective network 340 comprises electric capacity 342, first resistance 344 and second resistance 346 at least, wherein electric capacity 342 has one first end and one second end, the second end ground connection of electric capacity 342, one end of first resistance 344 is electrically connected first end of electric capacity 342, and the other end of first resistance 344 is electrically connected the emitter of NPN bipolar transistor 332a; One end of second resistance 346 is electrically connected the collector electrode of NPN bipolar transistor 332a and the first input end of ballast 200, and the other end of second resistance 346 is electrically connected first end of electric capacity 342 and second input of ballast 200.
Its operation principle is described in detail as follows:
When power module 210 starts, and during to electric capacity 312 charging, electric capacity 312 will produce coupled voltages thereupon, thereby switch 330 is produced input voltages, make the instantaneous conducting of NPN bipolar transistor 332a, and provide one first frequency of oscillation to ballast 200 by frequency selective network 340.This moment frequency selective network 340 equivalent resistance be first resistance 344 with second electricity organize 346 in parallel, its equivalent resistance will diminish, and the equivalent capacity of frequency selective network 340 is an electric capacity 342.Because first frequency of oscillation is the inverse of equivalent resistance and equivalent capacity product, therefore, frequency of oscillation will increase between 90KHz and the 110KHz.Wherein base resistance 334 is used for input voltage is converted to electric current, makes the action of NPN bipolar transistor 332a more stable.
When electric capacity 312 voltages rise to a stable voltage gradually, electric capacity 312 will form open circuit, make NPN bipolar transistor 332a end, and provide one second frequency of oscillation to described ballast 200 by frequency selective network 340.The equivalent resistance and the equivalent capacity of frequency selective network 340 will be respectively second resistance 346 and electric capacity 342 this moment.Because second frequency of oscillation is the inverse of equivalent resistance and equivalent capacity product, therefore, frequency of oscillation will be reduced to the operating frequency of ballast 200 gradually by high frequency, to finish filament frequency sweep preheat function.Wherein, the operating frequency of ballast 200 generally is designed to 45KHz to 50KHz, and frequency sweep is then determined by resistance 322 and electric capacity 312 warm-up time.
Embodiment two:
Fig. 2 b is the circuit diagram of second kind of frequency sweep preheat circuit 300 of the embodiment of the invention.Shown in Fig. 2 b, the element 310 that boosts comprises an electric capacity 312 at least, and impedance component 320 comprises a resistance 322 at least.330 on switch is made up of a NPN bipolar transistor 332b, a base resistance 334 and a bias resistance 336, wherein an end of bias resistance 336 is electrically connected the base stage of NPN bipolar transistor 332b, and the other end then is electrically connected the collector electrode of NPN bipolar transistor 332b.One end of base resistance 334 is electrically connected the base stage of NPN bipolar transistor 332b, and the other end then electrically connects the common joint of resistance 322 and electric capacity 312.
In addition, frequency selective network 340 comprises electric capacity 342, first resistance 344 and second resistance 346 at least, wherein electric capacity 342 has one first end and one second end, the second end ground connection of electric capacity 342, and an end of first resistance 344 is electrically connected first end of electric capacity 342, and the other end of first resistance 344 is electrically connected the emitter of NPN bipolar transistor 332b; One end of second resistance 346 is electrically connected the collector electrode of NPN bipolar transistor 332b and the first input end of ballast 200, and the other end of second resistance 346 is electrically connected first end of electric capacity 342 and second input of ballast 200.
Its operation principle is as follows:
When power module 210 starts, and during to electric capacity 312 charging, electric capacity 312 will produce coupled voltages thereupon, thereby switch 330 is produced input voltages, make the instantaneous conducting of NPN bipolar transistor 332b, and provide one first frequency of oscillation to ballast 200 by frequency selective network 340.At this moment, what the equivalent resistance of frequency selective network 340 was first resistance 344 with second resistance 346 is in parallel, its equivalent resistance will diminish, and the equivalent capacity of frequency selective network 340 is an electric capacity 342 then, make the frequency of oscillation of frequency selective network 340 increase between 90KHz and the 110KHz.Base resistance 334 is used for input voltage is converted to electric current, makes the action of NPN bipolar transistor 332b more stable.Bias resistance 336 is used to provide fixed gain, and its yield value is the ratio of bias resistance 336 and base resistance 334.
When capacitance voltage rises to a stable voltage gradually, electric capacity 312 will form open circuit, make NPN bipolar transistor 332b end, and provide one second frequency of oscillation to ballast 200 by frequency selective network 340.At this moment, the equivalent resistance of frequency selective network 340 and equivalent capacity will be respectively second resistance 346 and electric capacity 342, make frequency of oscillation reduce to the operating frequency of ballast 200 gradually by high frequency, to finish filament frequency sweep preheat function.Wherein, the operating frequency of ballast 200 generally is designed to 45KHz to 50KHz, and frequency sweep is then determined by resistance 322 and electric capacity 312 warm-up time.
Yet, in the explanation of above-mentioned Fig. 2 a and Fig. 2 b, though be the frequency sweep preheat function of illustrating and realize ballast device with the NPN bipolar transistor, but because the characteristic of PNP bipolar transistor is symmetrical in the NPN bipolar transistor, therefore, being familiar with this operator can realize, and the present invention can be implemented on the PNP bipolar transistor circuit equally, to obtain identical characteristics and effect.
Embodiment three:
Fig. 2 c is the circuit diagram of the third frequency sweep preheat circuit 300 of the embodiment of the invention.Shown in Fig. 2 c, the element 310 that boosts comprises an electric capacity 312 at least, and impedance component comprises a resistance 322 at least.Switch 330 is made of a N channel field-effect pipe 332c, and wherein the grid of N channel field-effect pipe 332c is electrically connected the common joint of resistance 322 and electric capacity 312.
In addition, frequency selective network 340 comprises electric capacity 342, first resistance 344 and second resistance 346 at least, wherein electric capacity 342 has one first end and one second end, the second end ground connection of electric capacity 342, one end of first resistance 344 is electrically connected first end of electric capacity 342, and the other end of first resistance 344 is electrically connected the source electrode of N channel field-effect pipe 332c; One end of second resistance 346 is electrically connected the drain electrode of N channel field-effect pipe 332c and the first input end of ballast 200, and the other end of second resistance 346 is electrically connected first end of electric capacity 342 and second input of ballast 200.
Its operation principle is as follows:
When power module 210 starts, and during to electric capacity 312 charging, electric capacity 312 will produce coupled voltages thereupon, thereby switch 330 is produced input voltages, make the instantaneous conducting of N channel field-effect pipe 332c, and provide one first frequency of oscillation to ballast 200 by frequency selective network 340.At this moment, what the equivalent resistance of frequency selective network 340 was first resistance 344 with the second electricity group 346 is in parallel, equivalent resistance will diminish, and the equivalent capacity of frequency selective network 340 is an electric capacity 342 then, make the frequency of oscillation of frequency selective network 340 increase between 90KHz and the 110KHz.
When electric capacity 312 voltages rise to a stable voltage gradually, electric capacity 312 will form open circuit, make N channel field-effect pipe 332c end, and provide one second frequency of oscillation to ballast 200 by frequency selective network 340.Equivalent resistance and the equivalent capacity of frequency selective network 340 will be respectively second resistance 346 and the electric capacity 342 this moment, thereby make its frequency of oscillation reduce to the operating frequency of ballast 200 gradually by high frequency, to finish filament frequency sweep preheat function.Wherein, the operating frequency of ballast 200 generally is designed to 45KHz to 50KHz, and frequency sweep is then determined by resistance 322 and electric capacity 312 warm-up time.
Though, in the explanation of above-mentioned Fig. 2 c, be the frequency sweep preheat function of illustrating and realize ballast device with N channel field-effect pipe, yet, because the characteristic of P-channel field-effect transistor (PEFT) pipe is symmetrical in N channel field-effect pipe, therefore, being familiar with this operator can realize, and the present invention can be implemented on the P-channel field-effect transistor (PEFT) pipe circuit equally, with the complexity that lowers its circuit framework and the use of assembly, thereby the life-span of effective prolonging lamp tube, and reach the cost benefit maximization.
The foregoing description is to explanation of the present invention, is not limitation of the invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention, and to various changes and the retouching that the present invention did, in the claim that all belongs to the present invention and advocated.
Claims (9)
1. ballast device, comprise and one have first input end, second input, be used for the output that is electrically connected with a fluorescent lamp and be used to provide the ballast of the power module of a direct current power supply, it is characterized in that also comprising: a frequency sweep preheat circuit, described frequency sweep preheat circuit comprises:
The element that boosts that one end is electrically connected with described power module, the described element that boosts also has the other end;
One end is connected electrically in the impedance component of the described element other end that boosts, and the described impedance element that boosts also has the other end;
Input is connected electrically in the switch of the described element other end that boosts;
Respectively with the output of described switch, the first input end that reaches described ballast and the frequency selective network that second input is electrically connected.
2. ballast device according to claim 1 is characterized in that: described switch comprises that a NPN bipolar transistor and an end are electrically connected on the base stage of NPN bipolar transistor, and the other end is electrically connected on the base resistance of the described element other end that boosts.
3. ballast device according to claim 2 is characterized in that: described frequency selective network comprises that an end is electrically connected on the electric capacity that first resistance of the emitter of described NPN bipolar transistor, an end are electrically connected on second input of the other end of second resistance of first input end of the collector electrode of described NPN bipolar transistor and described ballast and the other end that an end is electrically connected on described first resistance simultaneously, described second resistance and described ballast simultaneously.
4. ballast device according to claim 1, it is characterized in that: described switch comprises that a NPN bipolar transistor, two ends are connected electrically in base stage and the bias resistance of collector electrode and the base stage that an end is electrically connected on the NPN bipolar transistor of NPN bipolar transistor, the base resistance that the other end then is electrically connected with the described element other end that boosts respectively.
5. ballast device according to claim 4 is characterized in that: described frequency selective network comprises that an end is electrically connected on the electric capacity that first resistance of the emitter of described NPN bipolar transistor, an end are electrically connected on second input of the other end of second resistance of first input end of the collector electrode of described NPN bipolar transistor and described ballast and the other end that an end is electrically connected on described first resistance simultaneously, described second resistance and described ballast simultaneously.
6. ballast device according to claim 1 is characterized in that: described switch comprises that grid is electrically connected on the N channel field-effect pipe of the described element other end that boosts.
7. ballast device according to claim 6 is characterized in that: described frequency selective network comprises: first resistance, the end that an end is electrically connected on the source electrode of described N channel field-effect pipe is electrically connected on the electric capacity of second input of the other end of second resistance of first input end of the drain electrode of described N channel field-effect pipe and described ballast and the other end that an end is electrically connected on described first resistance simultaneously, described second resistance and described ballast simultaneously.
8. ballast device according to claim 1 is characterized in that: the described element that boosts comprises an electric capacity.
9. ballast device according to claim 1 is characterized in that: described impedance component comprises a resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910137427A CN101868104A (en) | 2009-04-20 | 2009-04-20 | Ballast device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910137427A CN101868104A (en) | 2009-04-20 | 2009-04-20 | Ballast device |
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| Publication Number | Publication Date |
|---|---|
| CN101868104A true CN101868104A (en) | 2010-10-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910137427A Pending CN101868104A (en) | 2009-04-20 | 2009-04-20 | Ballast device |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170864A (en) * | 2007-08-03 | 2008-04-30 | 崇贸科技股份有限公司 | Ballast with pre-heating controlled IC |
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- 2009-04-20 CN CN200910137427A patent/CN101868104A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170864A (en) * | 2007-08-03 | 2008-04-30 | 崇贸科技股份有限公司 | Ballast with pre-heating controlled IC |
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Application publication date: 20101020 |