CN101867174B - IGBT short-circuit protection circuit in frequency converter and method thereof - Google Patents
IGBT short-circuit protection circuit in frequency converter and method thereof Download PDFInfo
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- CN101867174B CN101867174B CN 201010194252 CN201010194252A CN101867174B CN 101867174 B CN101867174 B CN 101867174B CN 201010194252 CN201010194252 CN 201010194252 CN 201010194252 A CN201010194252 A CN 201010194252A CN 101867174 B CN101867174 B CN 101867174B
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Abstract
The invention discloses an IGBT (insulated gate bipolar transistor) short-circuit protection circuit in a frequency converter and a method thereof. The circuit comprises a time-delay circuit, an isolating amplifier circuit, a comparison circuit and a drive circuit, wherein the input terminal of the time-delay circuit is connected with the switching signal of the IGBT, and the output terminal of the time-delay circuit is sequentially connected with the isolating amplifier circuit and the comparison circuit; and the drive circuit adopts an IR2110 driving chip with the SD input terminal thereof being connected to the output terminal of the comparison circuit and the output terminal thereof being connected to the IGBT. The method comprises the steps of time delay, isolation amplification, comparison and driving, wherein the IGBT is switched on and off by using the IR2110 driving chip of the drive circuit. By externally connecting the simple time-delay circuit, the isolating amplifier circuit chip and the typical comparison circuit to the SD input terminal, the invention can achieve the short-circuit protection for the IGBT, ensure that the circuit structure is simple and the response is timely and reliable and greatly reduce the cost.
Description
Technical field
The present invention relates to the short-circuit protection technical field of a kind of IGBT, relate in particular to IGBT short-circuit protection circuit and method thereof in a kind of main circuit of converter.
Background technology
The purpose of IGBT short-circuit protection is after detecting short circuit in the main circuit of converter, closes IGBT in IGBT duration of short circuit allowed to bear, to guarantee the IGBT safe operation.The method that can take has: voltage U between collector electrode and emitter when detecting short circuit
CEIncrease and realize short-circuit protection, utilize current transformer to detect the IGBT overcurrent and realize short-circuit protection, voltage U between collector electrode and emitter when utilizing the IGBT short circuit
CEThe comprehensive realization short-circuit protection of the principle summation current transformer over-current detection that increases, the comprehensive realization short-circuit protection that falls the soft shutoff of grid voltage and reduction operating frequency, detection high-frequency alternating current flow short-circuit are realized short-circuit protection or are directly adopted IPM to realize short-circuit protection etc.In the said method, method simple, that easily realize is when detecting short circuit, voltage U between collector electrode and emitter
CEIncrease and realize short-circuit protection, the Indirect Electro platen press that the method adopts, voltage U between collector electrode and emitter during the IGBT overcurrent
CEIncrease and be essentially linear relationship, voltage U between the collector electrode when detecting overcurrent and emitter
CEAnd compare the shutoff of the output control drive circuit of comparator with the threshold value of setting.But generally adopt IGBT special purpose driver such as EXB841 in the method, price is high, in the production application of middle low power so that cost increase.
Summary of the invention
The problems referred to above that exist for solving prior art, the present invention will design IGBT short-circuit protection circuit and method thereof in a kind of cheaply main circuit of converter.
To achieve these goals, technical scheme of the present invention is as follows: a kind of IGBT short-circuit protection circuit in frequency converter, comprise delay circuit, isolating amplifier circuit, comparison circuit and drive circuit, switching signal, output that described delay circuit input connects IGBT are connected with isolating amplifier circuit, comparison circuit, drive circuit and IGBT successively, and described comparison circuit also has an input to be connected with the output signal end of IGBT; Described delay circuit is comprised of a RC circuit, the first bleeder circuit and a comparator IC1, the input of RC circuit connects the switching signal of IGBT, the output of RC circuit connects "+" end of comparator IC1, the first bleeder circuit is comprised of resistance R 2, resistance R 3, the output of the first bleeder circuit connects "-" end of comparator IC1, resistance R 4 is pull-up resistors of comparator IC1 output, and comparator IC1 output connects isolating amplifier circuit; Isolating amplifier circuit adopts chip TLP250, and 2 leads ends of chip TLP250 are that input, 6 leads ends are output; Comparison circuit comprises the second bleeder circuit and a comparator IC2, the second bleeder circuit is connected positive supply and is connected the output of isolating amplifier circuit with comparator IC2, "+" end of comparator IC2 connects the collector electrode C of IGBT, and the output of comparator IC2 is the output of comparison circuit; Drive circuit is selected and is driven chip I R2110, the SD input that drives chip I R2110 is connected to the comparison circuit output, the resistance R 14 of 1 leads ends string that drives chip I R2110 is connected to anodic bonding that the other end of the grid G of IGBT, a end that 3 leads ends are concatenated into resistance R 15, resistance R 15 is connected to the negative electrode of voltage-stabiliser tube, voltage-stabiliser tube to ground, and the negative electrode of voltage-stabiliser tube is also connected to the IGBT emitter E.
A kind of guard method of IGBT short-circuit protection circuit in frequency converter may further comprise the steps:
The switching signal that A, delay circuit will the be controlled IGBT a bit of time △ t that delays time forms the PWM ripple of time-delay △ t time, and protective circuit can normally be started;
B, isolating amplifier circuit are finished the isolation of the PWM ripple behind comparison circuit and the time-delay △ t, and booster tension reaches the required positive voltage of comparison circuit simultaneously;
C, comparison circuit are finished voltage threshold U between the emitter of the collector electrode of IGBT and IGBT
CEOSetting, carry out voltage U between the emitter of the collector electrode of IGBT and IGBT
CEAnd voltage threshold U between the collector electrode of setting IGBT and the emitter of IGBT
CEOComparison, relatively after output signal to the SD input that drives chip I R2110;
D, drive circuit utilization drive chip I R2110 and realize opening and turn-offing IGBT.
△ t of the present invention is 1.50-2.00us.
Compared with prior art, the present invention has following beneficial effect:
1, the present invention has utilized and has driven the characteristics that chip I R2110 has the SD input of blockade two-way driving, when this input is high level, drives chip I R2110 and blocks at once two-way output, turn-offs IGBT.Only need external simple delay circuit, isolation amplification chip and typical comparison circuit just can realize the IGBT short-circuit protection to the SD input so that circuit structure is very simple, and response is timely, reliably.
2, chip I R2110 is as driving chip cheaply because the present invention selects, and the special driving chip EXB841 that its cost ratio has similar defencive function hangs down 4~5 times, greatly reduces cost.
Description of drawings
3 in the total accompanying drawing of the present invention, wherein
Fig. 1 is the structured flowchart of IGBT short-circuit protection circuit in the main circuit of converter.
Fig. 2 is the circuit diagram of delay circuit and isolating amplifier circuit.
Fig. 3 is the circuit diagram of comparison circuit and part drive circuit.
Among the figure: 1, delay circuit, 2, isolating amplifier circuit, 3, comparison circuit, 4, drive circuit, 5, IGBT.
Embodiment
Below in conjunction with accompanying drawing the present invention is described further.As Figure 1-3, a kind of IGBT short-circuit protection circuit in frequency converter, comprise delay circuit 1, isolating amplifier circuit 2, comparison circuit 3 and drive circuit 4, switching signal, output that described delay circuit 1 input connects IGBT5 are connected with IGBT5 with isolating amplifier circuit 2, comparison circuit 3, drive circuit 4 successively, and described comparison circuit 3 also has an input to be connected with the output signal end of IGBT5; Described delay circuit 1 is comprised of a RC circuit, the first bleeder circuit and a comparator IC1, the input of RC circuit connects the switching signal of IGBT5, the output of RC circuit connects "+" end of comparator IC1, the first bleeder circuit is comprised of resistance R 2, resistance R 3, the output of the first bleeder circuit connects "-" end of comparator IC1, resistance R 4 is pull-up resistors of comparator IC1 output, and comparator IC1 output connects isolating amplifier circuit; Isolating amplifier circuit 2 adopts chip TLP250, and 2 leads ends of chip TLP250 are that input, 6 leads ends are output; Comparison circuit 3 comprises the second bleeder circuit and a comparator IC2, the second bleeder circuit is connected positive supply and is connected the output of isolating amplifier circuit 2 with comparator IC2, "+" end of comparator IC2 connects the collector electrode C of IGBT5, and the output of comparator IC2 is the output of comparison circuit 3; Drive circuit 4 is selected and is driven chip I R2110, the SD input that drives chip I R2110 is connected to comparison circuit 3 outputs, the resistance R 14 of 1 leads ends string that drives chip I R2110 is connected to anodic bonding that the other end of the grid G of IGBT5, a end that 3 leads ends are concatenated into resistance R 15, resistance R 15 is connected to the negative electrode of voltage-stabiliser tube, voltage-stabiliser tube to ground, and the negative electrode of voltage-stabiliser tube is also connected to the IGBT5 emitter E.
A kind of guard method of IGBT short-circuit protection circuit in frequency converter may further comprise the steps:
The switching signal that A, delay circuit 1 will the be controlled IGBT5 a bit of time △ t that delays time forms the PWM ripple of time-delay △ t time, and protective circuit can normally be started;
B, isolating amplifier circuit 2 are finished the isolation of the PWM ripple behind comparison circuit 3 and the time-delay △ t, and booster tension reaches comparison circuit 3 required positive voltages simultaneously;
C, comparison circuit 3 are finished voltage threshold U between the emitter of the collector electrode of IGBT5 and IGBT5
CEOSetting, carry out voltage U between the emitter of the collector electrode of IGBT5 and IGBT5
CEAnd voltage threshold U between the collector electrode of setting IGBT5 and the emitter of IGBT5
CEOComparison, relatively after output signal to the SD input that drives chip I R2110;
D, drive circuit 4 utilize and drive chip I R2110 realization opening and turn-offing IGBT5.
△ t of the present invention is 1.50-2.00us.
The present invention is further described below in conjunction with a specific embodiment.
In Fig. 2, delay circuit 1 is comprised of RC circuit and comparator IC1.Select simple RC circuit to realize time-delay, comparator IC1 processes the waveform after delaying time, and is regular PWM ripple with the signal of realizing input chip TLP250.Wherein, delay time is the us level, is jointly determined by "-" terminal voltage value of selected RC circuit and comparator IC1, if getting T=RC is 2us, when comparator IC1 "-" terminal voltage value is set as 2V, delay time is 1.86us.Chip TLP250 finishes the isolation enlarging function, improves voltage, its 6 pin output voltage V when guaranteeing the circuit isolation
CC, be used for comparison circuit 3 power supplies to Fig. 3.When 2 pins of chip TLP250 are low level, 6 pins output 0V, the comparison circuit 3 of Fig. 3 is not because working without positive supply; When 2 pins are high level, 6 pins output 18V, comparison circuit 3 normal operations.Like this, the PWM ripple after the delay process will be provided by whether providing of comparison circuit 3 positive supplies, guarantee that comparison circuit 3 is just devoted oneself to work after IGBT5 opens the △ t time among Fig. 3.
Fig. 3 is comparison circuit 3 and the part drive circuit 4 of specific embodiment.In Fig. 3, resistance R 6~R11 and comparator IC2 form comparison circuit 3.Regulating resistance R7 can set voltage U between collector electrode and emitter
CEThreshold value U
CEO, namely set the protection point.When IGBT5 normal operation and shutoff, the SD input that drives chip I R2110 all is low level, and IGBT5 will normally turn on and off.As IGBT5 during because of the short circuit overcurrent, voltage U between collector electrode and emitter
CECan increase to and be higher than voltage threshold U between collector electrode and emitter
CEO, fast recovery diode D1 is turned off, and the magnitude of voltage of comparator IC2 "+" end will be greater than the magnitude of voltage of "-" end like this; comparator IC2 is output as positive voltage, diode D2 conducting, and the SD input that drives chip I R2110 is high level; block at once output, turn-off IGBT5, realize short-circuit protection.
Comparator IC1 of the present invention and comparator IC2 all select the as a comparison chip of device of chip LM339.
Claims (3)
1. IGBT short-circuit protection circuit in frequency converter, comprise delay circuit (1), isolating amplifier circuit (2), comparison circuit (3) and drive circuit (4), described delay circuit (1) input connects IGBT(5) switching signal, output be connected with IGBT(5 and be connected with isolating amplifier circuit (2), comparison circuit (3), drive circuit (4) successively, described comparison circuit (3) is input and IGBT(5 in addition) an output signal end be connected; It is characterized in that: described delay circuit (1) is comprised of a RC circuit, the first bleeder circuit and a comparator IC1, the input connection IGBT(5 of RC circuit) switching signal, the output of RC circuit connects "+" end of comparator IC1, the first bleeder circuit is comprised of resistance R 2, resistance R 3, the output of the first bleeder circuit connects "-" end of comparator IC1, resistance R 4 is pull-up resistors of comparator IC1 output, and comparator IC1 output connects isolating amplifier circuit; Isolating amplifier circuit (2) adopts chip TLP250, and 2 leads ends of chip TLP250 are that input, 6 leads ends are output; Comparison circuit (3) comprises the second bleeder circuit and a comparator IC2, the second bleeder circuit is connected positive supply and is connected the output of isolating amplifier circuit (2) with comparator IC2, "+" end connection IGBT(5 of comparator IC2) collector electrode C, the output of comparator IC2 is the output of comparison circuit (3); Drive circuit (4) is selected and is driven chip I R2110, the SD input that drives chip I R2110 is connected to comparison circuit (3) output, the resistance R 14 of 1 leads ends string that drives chip I R2110 is connected to IGBT(5) the other end of grid G, a end that 3 leads ends are concatenated into resistance R 15, resistance R 15 be connected to the negative electrode of voltage-stabiliser tube, voltage-stabiliser tube anodic bonding to ground, the negative electrode of voltage-stabiliser tube is also connected to IGBT(5) emitter E.
2. the guard method of an IGBT short-circuit protection circuit in frequency converter is characterized in that: may further comprise the steps:
A, delay circuit (1) will be controlled IGBT(5) the switching signal a bit of time △ t that delays time, form the PWM ripple of time-delay △ t time, protective circuit can normally be started;
B, isolating amplifier circuit (2) are finished the isolation of the PWM ripple behind comparison circuit (3) and the time-delay △ t, and booster tension reaches the required positive voltage of comparison circuit (3) simultaneously;
C, comparison circuit (3) are finished IGBT(5) collector electrode and IGBT(5) emitter between voltage threshold U
CEOSetting, carry out IGBT(5) collector electrode and IGBT(5) emitter between voltage U
CEAnd set IGBT(5) collector electrode and IGBT(5) emitter between voltage threshold U
CEOComparison, relatively after output signal to the SD input that drives chip I R2110;
D, drive circuit (4) utilize and drive chip I R2110 and realize IGBT(5) open and turn-off.
3. the guard method of a kind of IGBT short-circuit protection circuit in frequency converter according to claim 2 is characterized in that: described △ t is 1.50-2.00us.
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CN 201010194252 CN101867174B (en) | 2010-06-07 | 2010-06-07 | IGBT short-circuit protection circuit in frequency converter and method thereof |
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CN 201010194252 CN101867174B (en) | 2010-06-07 | 2010-06-07 | IGBT short-circuit protection circuit in frequency converter and method thereof |
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CN101867174B true CN101867174B (en) | 2013-04-24 |
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Families Citing this family (9)
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CN102064535A (en) * | 2010-12-01 | 2011-05-18 | 深圳市蓝韵实业有限公司 | Insulated gate bipolar transistor overcurrent protection self-recovering circuit |
CN102157921B (en) * | 2011-04-01 | 2014-10-29 | 欧瑞传动电气股份有限公司 | Insulated gate bipolar transistor (IGBT) short circuit protection circuit and control method |
CN102201661B (en) * | 2011-05-30 | 2014-06-25 | 东南大学 | Short circuit self-protection circuit and method for insulated gate bipolar device |
CN102710243B (en) * | 2012-06-25 | 2015-03-11 | 深圳青铜剑电力电子科技有限公司 | Protection circuit and protection method of insulated gate device |
US9263937B2 (en) * | 2013-12-11 | 2016-02-16 | Monolithic Power Systems, Inc. | Short protection circuit for power switch and associated protection method |
CN106253206B (en) * | 2014-08-07 | 2018-12-04 | 石狮市酷瑞电气有限责任公司 | The fast short-circuit protective circuit and device of frequency changer direct current bus |
CN105049010B (en) * | 2015-08-27 | 2018-11-27 | 广州易和医疗技术开发有限公司 | A kind of IGBT current foldback circuit and its method |
CN105811938B (en) * | 2016-04-26 | 2018-09-04 | 湖南利能科技股份有限公司 | IGBT over-current signal latch cicuits |
CN107741550A (en) * | 2017-08-25 | 2018-02-27 | 广州七喜智能设备有限公司 | Transducer brake unit short circuit detecting system and method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101399491A (en) * | 2007-11-06 | 2009-04-01 | 中国科学院电工研究所 | Overcurrent protection circuit for photovoltaic DC-to-AC converter |
CN101534110A (en) * | 2009-04-10 | 2009-09-16 | 深圳市科陆变频器有限公司 | IGBT current-limiting drive circuit |
CN101677240A (en) * | 2008-09-18 | 2010-03-24 | 比亚迪股份有限公司 | Isolated gate bipolar transistor driving circuit |
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2010
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101399491A (en) * | 2007-11-06 | 2009-04-01 | 中国科学院电工研究所 | Overcurrent protection circuit for photovoltaic DC-to-AC converter |
CN101677240A (en) * | 2008-09-18 | 2010-03-24 | 比亚迪股份有限公司 | Isolated gate bipolar transistor driving circuit |
CN101534110A (en) * | 2009-04-10 | 2009-09-16 | 深圳市科陆变频器有限公司 | IGBT current-limiting drive circuit |
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