CN101865729B - Method for measuring cavity surface temperature of semiconductor laser - Google Patents
Method for measuring cavity surface temperature of semiconductor laser Download PDFInfo
- Publication number
- CN101865729B CN101865729B CN 200910081995 CN200910081995A CN101865729B CN 101865729 B CN101865729 B CN 101865729B CN 200910081995 CN200910081995 CN 200910081995 CN 200910081995 A CN200910081995 A CN 200910081995A CN 101865729 B CN101865729 B CN 101865729B
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- near field
- optical microscope
- scanning
- feature image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
The invention relates to a method for measuring cavity surface temperature of a semiconductor laser by using a scanning near-field optical microscope, which comprises the following steps of: installing the semiconductor laser on a heat sink, and leading out an electrode; testing parameters of the semiconductor laser; fixing the heat sink on a sample test table of the scanning near-field optical microscope; connecting an electrode with a current output end of a current output device; placing a probe of the scanning near-field optical microscope above a light emergent cavity surface of the semiconductor laser; enabling the semiconductor laser to be close to the probe of the scanning near-field optical microscope to be in a non-contact working state; determining the scanning range of an active region including the semiconductor laser according to the characteristic dimension of the semiconductor laser; scanning to obtain a feature image under the condition of no current injection; injecting a constant current to obtain a feature image and a near field light spot image of the light emergent cavity surface of the semiconductor laser; comparing the feature images before and after the current is injected, calculating the difference value of the feature change; and calculating corresponding temperature change according to coefficients of thermal expansion of various materials in the semiconductor laser.
Description
Technical field
The present invention is a kind of measuring method of cavity surface temperature of semiconductor laser, has the characteristics of simple and convenient measurement cavity surface temperature of semiconductor laser, belongs to technical field of semiconductor device.
Background technology
Semiconductor laser is widely used in every field such as commerce, industry, medical treatment, military affairs, and its main advantage has that volume is little, life-span length, good stability, the high and low cost of energy efficiency etc.In recent years, along with industry, medical treatment and military development, the requirement of laser output power is improved constantly.For high power semiconductor lasers; The light load and the heat load of laser instrument emitting cavity face are very big, cause laser cavity surface to degenerate, and influence the performance and the life-span of laser instrument; Therefore studying the laser cavity surface temperature characterisitic, is an important technology analyzing laser performance.The method that realizes the laser cavity surface temperature property test at present has six kinds, and they are that scanning thermal microscope method (SThM), heat reflection measuring method (TR), method for measuring Raman spectrum (uR), electroluminescence method (Electroluminescence), photoluminescent method (Photoluminescence), the infrared calorifics of scanning near-field are as appearance method (SNIM).
Semiconductor laser in its duty, need satisfy several conditions to its temperature survey: at first as an active device; Need to adopt non-cpntact measurement; If laser cavity surface is destroyed, will directly have influence on the performance of laser instrument, thereby the actual Effect on Detecting of influence.Secondly, need higher resolution, the laser instrument active area all is in nanometer scale, and the size of the whole chamber of laser instrument face micron dimension just, in order to measure the Temperature Distribution on the face of chamber, method of testing just must possess high spatial resolution.At last, the measurement of laser chamber surface temperature is all measured under laser instrument is in running order, what guarantee measurement data really is property, just can not produce the light field of laser instrument output and disturb.Therefore, in order to satisfy above-mentioned requirements, a kind of method of utilizing optical microscope for scanning near field Laser Measurement device chamber surface temperature has been proposed.
Summary of the invention
The present invention proposes a kind of cavity surface temperature of semiconductor laser measuring method based on optical microscope for scanning near field; This method is convenient and need not special equipment; Simultaneously the light field characteristic and the temperature characterisitic of Laser Measurement device; For the specificity analysis of laser instrument provides a kind of strong means; This method measure respectively semiconductor laser the chamber face feature image under the no current injection condition with chamber face feature image and the near field light spot image thereof injection condition under arranged, the above-mentioned two picture group pictures of comparative analysis can draw the chamber face thermal expansion variation that causes owing to the thermal effect of injection current under the electric current injection condition; According to the material coefficient of thermal expansion coefficient, calculate the chamber surface temperature of semiconductor laser.This method can be measured the temperature of the films on cavity surfaces of semiconductor lasers under the continuous duty condition.
The present invention provides a kind of method of utilizing optical microscope for scanning near field to measure cavity surface temperature of semiconductor laser; Can measure under different electric stream injection condition; The chamber surface temperature that is in the semiconductor laser of continuous duty distributes, and it is characterized in that this method comprises the steps:
(1) with semiconductor laser installing on heat sink, and extraction electrode;
(2) measuring semiconductor laser parameters;
(3) will have the heat sink of semiconductor laser is fixed on the optical microscope for scanning near field sample test platform;
(4) electrode with semiconductor laser is connected with the current output terminal of current output device;
(5) under the optical lens monitoring of optical microscope for scanning near field, the probe of optical microscope for scanning near field is placed the emitting cavity face top of semiconductor laser;
(6) running parameter of optical microscope for scanning near field is set;
(7) semiconductor laser and optical microscope for scanning near field probe are approached, make the probe of optical microscope for scanning near field and the emitting cavity face of semiconductor laser be in non-contacting duty;
(8), confirm to comprise the sweep limit of the active area of semiconductor laser according to the size of semiconductor laser;
(9) under the condition that does not have electric current to inject, scanning obtains the feature image of semiconductor laser emitting cavity face;
(10) inject a constant electric current to semiconductor laser again, begin new semiconductor laser emitting cavity face scanning process, obtain the feature image and the near field light spot image of semiconductor laser emitting cavity face;
(11) feature image before and after the comparison semiconductor laser injection current calculates the difference of injecting the semiconductor laser emitting cavity face morphology change that causes owing to electric current;
(12) according to various material coefficient of thermal expansion coefficients in the semiconductor laser, calculate corresponding temperature change.
Said measuring semiconductor laser parameters comprises I-V, the I-P characterisitic parameter of measuring semiconductor laser instrument, confirms the threshold current of semiconductor laser, and the relation between the injected value of current during temperature survey and voltage, the Output optical power.
Said the heat sink of semiconductor laser that will have is fixed on the optical microscope for scanning near field sample test platform, and the emitting cavity face of this semiconductor laser is vertical with the probe of optical microscope for scanning near field.
Said electrode with semiconductor laser is connected with the current output terminal of current output device, and the current output terminal of this current output device is fixed on the optical microscope for scanning near field sample test platform.
Said again to constant electric current of semiconductor laser injection; Begin new semiconductor laser emitting cavity face scanning process; Obtain the feature image and the near field light spot image of semiconductor laser emitting cavity face, the time point that its electric current injects is consistent with the time point that begins to scan.
Said again to constant electric current of semiconductor laser injection; Begin new semiconductor laser emitting cavity face scanning process; Obtain the feature image and the near field light spot image of semiconductor laser emitting cavity face, the near field light spot image of acquisition is in order to the position of the active area of definite semiconductor laser.
Said step (11) is performed such, and will not have the feature image of the semiconductor laser emitting cavity face that scanning obtains under the electric current injection condition to align with the initial analyzing spot of the feature image that the semiconductor laser emitting cavity face that obtains under the electric current injection condition is arranged; What calculate respectively that semiconductor laser causes owing to electric current injects changes difference perpendicular to the variation difference of the feature image of semiconductor laser light direction with along the feature image of semiconductor laser light direction, and the variation difference of these feature image is the horizontal thermal expansion amount of semiconductor laser and vertical thermal expansion amount.
Description of drawings
For further specifying content of the present invention and characteristics, below in conjunction with accompanying drawing and embodiment the present invention is done a detailed description, wherein:
Fig. 1 is the synoptic diagram with the 60 chamber surface temperatures variations of optical microscope for scanning near field test edge-emission semiconductor laser involved in the present invention;
Fig. 2 is that face emitting semiconductor laser 20 is installed in the synoptic diagram on heat sink 10;
Fig. 3 is that edge-emission semiconductor laser 20 is installed in the synoptic diagram on heat sink 10;
Fig. 4 is the layer structural representation of 808nm wavelength side launching semiconductor laser in sweep limit in this instance;
Fig. 5 calculates the temperature variation of the semiconductor laser that obtains and the graph of a relation of probe location in this instance.
Embodiment
The instance explanation: common 808nm wavelength side emitting laser chamber surface temperature is measured.
Wherein:
(1) semiconductor laser 60 is installed on heat sink 30, and extraction electrode 70; Adopt in this instance heat sink 30 for copper heat sink, a manhole is arranged on copper heat sink 30, be used for fixing.Copper is heat sink, and the face of circular port is arranged is heat sink 30 above and below, and other face is heat sink 30 side (seeing also Fig. 1).This method of testing is applicable to face emitting semiconductor laser 60 and edge-emission semiconductor laser 60; To have heat sink 30 of semiconductor laser 60 and be installed in easily on the optical microscope for scanning near field sample test platform 20 in order to make; For surface launching and edge-emission semiconductor laser, its position that is installed on heat sink there are differences.Being installed in heat sink 10 for face emitting semiconductor laser 20 has on the face of circular port, and the emitting cavity of semiconductor laser face up (seeing also Fig. 2).Be installed in heat sink 10 side for edge-emission semiconductor laser 20, the position of semiconductor laser 20 emitting cavity faces is a little more than heat sink (seeing also Fig. 3).In the explanation of this instance, the semiconductor laser 60 of test is common 808nm wavelength side emitting laser 60, according to the installation method of edge-emission semiconductor laser 60, it is installed in the side of copper heat sink 30, and the structural representation after it is installed sees also Fig. 1.
(2) will have on the test platform that heat sink 30 semiconductor laser 60 places special-purpose semiconductor laser characteristic test instrument equipment; The I-V of noise spectra of semiconductor lasers 60, I-P characterisitic parameter are tested; Injected value of current during according to temperature survey, the injected value of current when selecting the test characteristic parameter.Electric current injection value when general requirement, test are greater than temperature survey with the electric current injection value of semiconductor laser 60.Confirm the threshold current of semiconductor laser 60 and the injection current energy under thermometric injection current condition, light energy output and their energy difference according to I-V, I-P characterisitic parameter.
(3) will have heat sink 30 semiconductor laser 60 and take off from the characteristic test platform after; Be fixed on the optical microscope for scanning near field sample test platform 20 heat sink 30; Because the characterisitic parameter of semiconductor laser 60 is along with the time can change to some extent, so generally require to carry out temperature property test involved in the present invention immediately after the characterisitic parameter test.Be fixed on 20 last times of optical microscope for scanning near field sample test platform with heat sink 30; Require the emitting cavity face of semiconductor laser 60 vertical with the probe 10 of optical microscope for scanning near field, promptly the detection direction of the probe 10 of the light direction of semiconductor laser and optical microscope for scanning near field is consistent (please participate in Fig. 1).In step (1); Semiconductor laser 60 is installed in heat sink 30 last times; Face emitting semiconductor laser be installed in heat sink above; And edge-emission semiconductor laser is installed in heat sink side, and the bottom surface with heat sink 30 contacts with optical microscope for scanning near field sample test platform 20, and the direction of heat sink 30 through hole is vertical with optical microscope for scanning near field sample test platform 20 planes; And through heat sink 30 through hole; The direction of the through hole with heat sink 30 links to each other with optical microscope for scanning near field sample test platform 20, just can realize being fixed on 20 last times of optical microscope for scanning near field sample test platform with heat sink 30 the requirement that the emitting cavity face of semiconductor laser 60 and the probe of optical microscope for scanning near field 10 are vertical.
(4) electrode 70 with semiconductor laser 60 is connected with the current output terminal of current output device 80; Current output device 80 is external units that the steady current input is provided for semiconductor laser 60, and this equipment does not belong to scanning near-field optical microscopy system.The stress that produces for the relative displacement between the electrode 70 of current output terminal that can less current output device 80 and semiconductor laser; And the exerting an influence of this stress noise spectra of semiconductor lasers 60 emitting cavity face feature image test results; In this example, the current output terminal with current output device 80 is fixed on the optical microscope for scanning near field sample test platform 20.
(5) under the optical lens monitoring of optical microscope for scanning near field, the probe 10 of optical microscope for scanning near field is placed the emitting cavity face top of semiconductor laser 60;
(6) running parameter of optical microscope for scanning near field is set, comprising the amplifying voltage of the photomultiplier that optical microscope for scanning near field is set;
(7) semiconductor laser 60 is forced into optical microscope for scanning near field probe 10, make the probe 10 of optical microscope for scanning near field and the emitting cavity face of semiconductor laser 60 be in non-contacting duty;
(8) according to the characteristic dimension of semiconductor laser 60, confirm to comprise the sweep limit of the active area 50 of semiconductor laser 60, the characteristic dimension of semiconductor laser 60 is design physical dimensions of semiconductor laser 60, comprises the size of each layer geometry.In this example, measured semiconductor laser is a 808nm wavelength side launching semiconductor laser 60.In the process of sweep test; At first find out the position that semiconductor laser 60 is connected with heat sink 30 according to the sudden change of pattern; Then along the progressively position of translation scan starting point of direction that suddenlys change; Find the position of semiconductor laser 60 ridge platforms,, confirm to comprise the sweep limit of the active area 50 of semiconductor laser 60 according to the size of each layer of semiconductor laser 60 ridge platforms and 808nm wavelength side launching semiconductor laser 60.
(9) under the condition that does not have the electric current injection condition, scanning obtains the feature image of semiconductor laser 60 emitting cavity faces.The semiconductor laser 60 of test is an edge-emission semiconductor laser 60 in this example; The feature image that scanning obtains is a 3-D view; Abscissa value and ordinate value are the scanning position of probe; The horizontal ordinate direction is the direction of vertical and active area, and the ordinate direction is the direction that is parallel to active area.And the direction of ordinate is perpendicular to the direction of emitting cavity face along the light outgoing, the variation of height on the vertical emitting cavity face of the ordinate value representation direction.This 3-D view also can be used a two-dimensional matrix, and matrix value is the variation of height on the vertical emitting cavity face direction.According to step (8); Semiconductor laser 60 active areas 50 are positioned in the sweep limit; The image that in this sweep limit, obtains is relevant with the structure of semiconductor laser 60, and in this example, the semiconductor laser that test is used is 808nm edge-emission semiconductor laser 60; The physical dimension of semiconductor laser 60 in sweep limit of confirming according to said method and the instance, the feature image of acquisition comprise heat sink 01 feature image of semiconductor laser; Semiconductor laser and heat sink between the feature image of scolder 02; The feature image of overlayer 03 in the semiconductor laser; The feature image of active layer 04 in the semiconductor laser; And cushion and the feature image (seeing also Fig. 4) of claiming bottom 05 in the semiconductor laser.For edge-emission semiconductor laser; Its emitting cavity face will be a little more than heat sink; Therefore measuring the image that obtains has significantly bright dark two zones, and dark zone is the position at heat sink 30 places, and bright zone is the position at semiconductor laser 60 places; The boundary line in light and shade zone is semiconductor laser and heat sink intersection, just the position (seeing also Fig. 1) at scolder 40 places.
(10) inject a constant electric current for again semiconductor laser 60, begin new semiconductor laser 60 chamber face scanning processes, obtain the feature image and the near field light spot image of semiconductor laser 60 emitting cavity faces; Time point and consistent mainly the acting as of the time point that begins to scan that its electric current injects: (a) reference mark is provided for follow-up morphology change; (b) time of scanning is consistent with the time that electric current injects.Have under the electric current injection condition; Also there are two zones of light and shade in the emitting cavity face feature image of the semiconductor laser 60 that obtains; Bright zone is the feature image of semiconductor laser 60 regions; Dark zone is the feature image of heat sink 30 regions, and the position, boundary of light and shade bright area is the feature image of scolder 40 regions.Have under the condition of electric current injection, the emitting cavity face feature image and the light spot image of semiconductor laser 60 obtain simultaneously, and they are the functions of probe location.Has the position corresponding relation between the emitting cavity face feature image of semiconductor laser 60 and the near field light spot image.On the light spot image of near field, can clearly locate the brightest interval range; It is the position of semiconductor laser 60 active areas 50; According to the emitting cavity face feature image of semiconductor laser 60 and the position corresponding relation of near field light spot image, can in the emitting cavity face feature image of semiconductor laser 60, locate the position of active area.
(11) feature image before and after comparison semiconductor laser 60 injection currents; Calculate the difference of injecting the semiconductor laser 60 chamber face morphology change that cause owing to electric current; Its key step is following: at first, will not having the emitting cavity face feature image of the semiconductor laser 60 that scanning obtains under the electric current injection condition is that basic point aligns with the emitting cavity face feature image that the semiconductor laser 60 that obtains under the electric current injection condition is arranged with the preliminary sweep point; Secondly, calculate semiconductor laser 60 because the variation that the electric current injection causes, the i.e. horizontal thermal expansion amount of semiconductor laser 60 perpendicular to the feature image of semiconductor laser 60 active areas 50 directions; Once more, the variation that calculates that semiconductor laser 60 causes owing to electric current injects, i.e. semiconductor laser 60 vertical thermal expansion amounts along the feature image of semiconductor laser 60 cavity length directions.In this instance; Selection is done numerical difference between according to the related data of active area 50 positions of the definite semiconductor laser 60 of step (10); Obtain the feature image variable quantity of semiconductor laser 60 active areas 50, i.e. vertical thermal expansion amount of semiconductor laser 60 active areas 50 along semiconductor laser 60 cavity length directions.
(12) according to the thermal expansivity of semiconductor laser 60 layers of materials, calculate corresponding temperature change.Because semiconductor laser 60 each layers are made up of material different, therefore should select the thermal expansivity of its respective material for each layer material.When the selection of material thermal expansion coefficient, note the qualification of size and temperature range, be convenient to the variation of accurate Calculation semiconductor laser 60 chamber surface temperatures.In this example; Calculate the temperature variation of semiconductor laser 60 active areas 50; So select the material coefficient of thermal expansion coefficient of active area, the relation (seeing also Fig. 5) between the temperature variation of calculating acquisition semiconductor laser 60 active areas 50 and the position of scan-probe.Because the process of scanning is the scanning of a constant frequency, and the time point that begins to scan is consistent with the time point of injection current, so the curve map of probe location and temperature variation, in fact is exactly the graph of relation between electric current injection length and the temperature variation.According to the thermal expansivity of semiconductor laser layers of material, and the variation of electric current injection front and back semiconductor laser 60 chamber face feature image, pointwise calculates the Temperature Distribution of semiconductor laser 60 chamber faces.
Although at length show and described the present invention with reference to its certain embodiments, should also be noted that technician for this professional domain, the various changes that can carry out its form and details, and do not break away from the scope thereof of the present invention.
Claims (7)
1. method of utilizing optical microscope for scanning near field to measure cavity surface temperature of semiconductor laser; Can measure under different electric stream injection condition; The chamber surface temperature that is in the semiconductor laser of continuous duty distributes, and it is characterized in that this method comprises the steps:
(1) with semiconductor laser installing on heat sink, and extraction electrode;
(2) measuring semiconductor laser parameters;
(3) will have the heat sink of semiconductor laser is fixed on the optical microscope for scanning near field sample test platform;
(4) electrode with semiconductor laser is connected with the current output terminal of current output device;
(5) under the optical lens monitoring of optical microscope for scanning near field, the probe of optical microscope for scanning near field is placed the emitting cavity face top of semiconductor laser;
(6) running parameter of optical microscope for scanning near field is set;
(7) semiconductor laser and optical microscope for scanning near field probe are approached, make the probe of optical microscope for scanning near field and the emitting cavity face of semiconductor laser be in non-contacting duty;
(8), confirm to comprise the sweep limit of the active area of semiconductor laser according to the size of semiconductor laser;
(9) under the condition that does not have electric current to inject, scanning obtains the feature image of semiconductor laser emitting cavity face;
(10) inject a constant electric current to semiconductor laser again, begin new semiconductor laser emitting cavity face scanning process, obtain the feature image and the near field light spot image of semiconductor laser emitting cavity face;
(11) feature image of semiconductor laser emitting cavity face before and after the comparison injection current calculates the difference of injecting the semiconductor laser emitting cavity face morphology change that causes owing to electric current;
(12) according to various material coefficient of thermal expansion coefficients in the semiconductor laser, calculate corresponding temperature change.
2. the method that cavity surface temperature of semiconductor laser according to claim 1 is measured; It is characterized in that; Said measuring semiconductor laser parameters; The I-V, the I-P characterisitic parameter that comprise the measuring semiconductor laser instrument are confirmed the threshold current of semiconductor laser, and the relation between the injected value of current during temperature survey and voltage, the Output optical power.
3. the method that cavity surface temperature of semiconductor laser according to claim 1 is measured; It is characterized in that; Said the heat sink of semiconductor laser that will have is fixed on the optical microscope for scanning near field sample test platform, and the emitting cavity face of this semiconductor laser is vertical with the probe of optical microscope for scanning near field.
4. the method that cavity surface temperature of semiconductor laser according to claim 1 is measured; It is characterized in that; Said electrode with semiconductor laser is connected with the current output terminal of current output device, and the current output terminal of this current output device is fixed on the optical microscope for scanning near field sample test platform.
5. the method that cavity surface temperature of semiconductor laser according to claim 1 is measured; It is characterized in that; Said again to constant electric current of semiconductor laser injection; Begin new semiconductor laser emitting cavity face scanning process, obtain the feature image and the near field light spot image of semiconductor laser emitting cavity face, the time point that its electric current injects is consistent with the time point that begins to scan.
6. the method that cavity surface temperature of semiconductor laser according to claim 1 is measured; It is characterized in that; Said again to constant electric current of semiconductor laser injection; Begin new semiconductor laser emitting cavity face scanning process, obtain the feature image and the near field light spot image of semiconductor laser emitting cavity face, the near field light spot image of acquisition is in order to the position of the active area of definite semiconductor laser.
7. the method that cavity surface temperature of semiconductor laser according to claim 1 is measured; It is characterized in that; Said step (11) is performed such, and will not have the feature image of the semiconductor laser emitting cavity face that scanning obtains under the electric current injection condition to align with the initial analyzing spot of the feature image that the semiconductor laser emitting cavity face that obtains under the electric current injection condition is arranged; What calculate respectively that semiconductor laser causes owing to electric current injects changes difference perpendicular to the variation difference of the feature image of the semiconductor laser emitting cavity face of semiconductor laser light direction with along the feature image of the semiconductor laser emitting cavity face of semiconductor laser light direction, and the variation difference of these feature image is the horizontal thermal expansion amount of semiconductor laser and vertical thermal expansion amount.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910081995 CN101865729B (en) | 2009-04-15 | 2009-04-15 | Method for measuring cavity surface temperature of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910081995 CN101865729B (en) | 2009-04-15 | 2009-04-15 | Method for measuring cavity surface temperature of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101865729A CN101865729A (en) | 2010-10-20 |
| CN101865729B true CN101865729B (en) | 2012-03-07 |
Family
ID=42957541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910081995 Active CN101865729B (en) | 2009-04-15 | 2009-04-15 | Method for measuring cavity surface temperature of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101865729B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102062647B (en) * | 2010-11-24 | 2012-08-08 | 中国科学院半导体研究所 | Testing system for measuring temperature of cavity surface of semiconductor laser |
| CN105115698B (en) * | 2015-09-25 | 2018-06-15 | 西安立芯光电科技有限公司 | For the integrated test system of films on cavity surfaces of semiconductor lasers failure analysis |
| CN106872069B (en) * | 2016-12-19 | 2019-06-04 | 中北大学 | The method for real-time measurement of surface temperature during a kind of Damage of Optical Film |
| CN106872068B (en) * | 2016-12-19 | 2019-06-07 | 中北大学 | The real-time measurement apparatus of surface temperature during a kind of Damage of Optical Film |
| CN108521293B (en) * | 2018-04-04 | 2019-10-08 | 中国人民解放军国防科技大学 | Method for monitoring semiconductor laser degradation on line |
| CN111106040B (en) * | 2019-12-06 | 2022-06-10 | 福建省福联集成电路有限公司 | Equipment for accurately controlling metal sinking |
| CN113865742A (en) * | 2021-08-20 | 2021-12-31 | 北京工业大学 | Method and device for measuring temperature of inner side of coated film of cavity surface of semiconductor laser based on detection optical fiber |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1344951A (en) * | 2000-09-29 | 2002-04-17 | 中国科学院低温技术实验中心 | Heat sink type cryogenic biological sample platform for scanning probe microscope |
| CN101344438A (en) * | 2007-07-09 | 2009-01-14 | 株式会社神户制钢所 | Temperature-measuring member, temperature-measuring device, and method for measuring temperature |
-
2009
- 2009-04-15 CN CN 200910081995 patent/CN101865729B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1344951A (en) * | 2000-09-29 | 2002-04-17 | 中国科学院低温技术实验中心 | Heat sink type cryogenic biological sample platform for scanning probe microscope |
| CN101344438A (en) * | 2007-07-09 | 2009-01-14 | 株式会社神户制钢所 | Temperature-measuring member, temperature-measuring device, and method for measuring temperature |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101865729A (en) | 2010-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101865729B (en) | Method for measuring cavity surface temperature of semiconductor laser | |
| Farzaneh et al. | CCD-based thermoreflectance microscopy: principles and applications | |
| CN100588923C (en) | Temperature measurement device and temperature measurement method | |
| US7414409B1 (en) | Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers | |
| CN109839406B (en) | High-precision testing method for interface contact thermal resistance | |
| CN103364391B (en) | Device for measuring thermal diffusivity and method for measuring thermal diffusivity | |
| CN106596626A (en) | Method and apparatus for measuring thermal diffusivity of materials through transient fluorescence | |
| CN1712919A (en) | Positioning distributed fibre-optical temperature sensing monitor and method for pipeline leakage | |
| US7642772B1 (en) | Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers | |
| CN101576565A (en) | Location test system for defects of integrated circuit and implementation method thereof | |
| CN2809618Y (en) | Distributed optical fiber temperature sensing and monitoring device for positioning pipeline leakage | |
| Pustakhod et al. | Fast and robust method for measuring semiconductor optical amplifier gain | |
| CN108760253A (en) | A kind of laser crystal thermal focal method for fast measuring | |
| McGregor et al. | Laser-based volumetric colour-coded three-dimensional particle velocimetry | |
| CN106289726A (en) | A kind of photon band-gap optical fiber backscattering distributed measurement method and device | |
| Dudek et al. | Combined simulation and optical measurement technique for investigation of system effects on components solder fatigue | |
| Dilhaire et al. | Thermoreflectance calibration procedure on a laser diode: Application to catastrophic optical facet damage analysis | |
| CN104713651A (en) | High-spatial-resolution and high-temporal-resolution infrared thermal imaging temperature measurement method | |
| Raad et al. | Thermoreflectance temperature measurements for optically emitting devices | |
| Sun et al. | Online deformation characterization for electrothermal-mechanical effect of power module via confocal methodology | |
| CN209416532U (en) | Detection device for thermally stimulated current method | |
| CN115479951A (en) | Method and system for detecting surface defect type and shape of optical element | |
| CN104964929B (en) | A kind of method for obtaining material thermo-optic coefficients by measuring spot radius change | |
| KR101418308B1 (en) | LED Wavelength Comparator and Method thereof | |
| KR101430808B1 (en) | Defect detection apparatus for vacuum insulation panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |