CN101859001A - Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof - Google Patents
Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof Download PDFInfo
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- CN101859001A CN101859001A CN 201010195943 CN201010195943A CN101859001A CN 101859001 A CN101859001 A CN 101859001A CN 201010195943 CN201010195943 CN 201010195943 CN 201010195943 A CN201010195943 A CN 201010195943A CN 101859001 A CN101859001 A CN 101859001A
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Abstract
The invention discloses a silicon dioxide optical waveguide device based on a B-Ge-codoped upper cladding and a preparation method thereof. The preparation method comprises the following steps of: sedimentating a silicon dioxide lower cladding on a substrate, sedimentating a Ge-doped silicon dioxide film on the upper surface of the lower cladding, forming waveguide sandwich layers with a square cross section by lithography and etching processes; sedimentating a B-Ge-codoped silicon dioxide upper cladding on the silicon dioxide lower cladding and the waveguide sandwich layers without forming a gap between the upper cladding and the waveguide structure of the sandwich layer; and carrying out a high-temperature thermal-annealing process on the sedimented B-Ge-codoped silicon dioxide upper cladding and refluxing the upper cladding film with a low melting point into a gap between adjacent waveguide sandwich layers so that the shadowing effect action is lessened in a subsequent sedimentation film layer to fully fill the inter-waveguide gap and lessen the device loss. The silicon dioxide waveguide device structure based on the B-Ge-codoped upper cladding can be widely applied to devices in a waveguide structure with a high aspect ratio, such as splitters, couplers, array waveguide gratings, and the like.
Description
Technical field
The present invention relates to a kind of planar optical waveguide device, especially relate to a kind of silicon dioxide optical waveguide device and preparation method based on B-Ge-codoped upper cladding.
Background technology
At electronic technology field, the history that discrete device develops into integrated circuit has changed the electronic industry production model.Equally, at optical technical field, at present all kinds of optical elements of single form move towards the road of following integrated optics, also will change the present situation of current traditional optical technology greatly, and the exploitation of military and civilian infosystem is exerted far reaching influence.Notion as the IC chip, planar optical waveguide (Planar Lightwave Circuits, be called for short PLCs) be exactly to utilize and conventional semiconductor processing (Complementary Metal OxideSemiconductor, be called for short CMOS) compatible technology of preparing, optical module is incorporated on the wafer (wafer), help the optical communication assembly integrated, reduced volume, and can reduce the encapsulation number of times, this make planar optical waveguide device with such as lens, prism, traditional discrete optical device such as film filter is compared, and has large-scale production, not only has low-cost potentiality, high stability, high integration, abilities such as device integration are the core parts of forming various integrated optical devices.
So-called planar optical waveguide that is to say that optical waveguide is positioned at a plane.Modal PLC shunt is made of silicon dioxide (SiO2).Device based on the planar optical waveguide technical solution comprises: shunt (Splitter), star-type coupler (Star coupler), adjustable optical attenuator (Variable Optical Attenuator, VOA), photoswitch (Optical switch), light comb (Interleaver) and array waveguide grating (ArrayWaveguide Grating, AWG) etc.The performance of these devices depends critically upon the semiconductor fabrication process level.
Be example with the SiO 2 waveguide respectively below, introduce planar optical waveguide technology, whole technology was divided into for eight steps:
1) adopt flame hydrolysis (Flame Hydrolysis Deposition is called for short FHD) or chemical vapor deposition method (Chemical Vapor Deposition is called for short CVD), growth one deck SiO2 on silicon chip is as the waveguide under-clad layer;
2) adopt FHD or CVD technology, regrowth one deck SiO2 on under-clad layer, as waveguide core layer, wherein the doped germanium ion obtains the refringence that needs;
3), make the two-layer SiO2 that grows previously become evenly fine and close by the annealing hardening process;
4) carry out photoetching, the waveguide figure of needs is protected with photoresist;
5) adopt reactive ion etching (Reactive Ion Etching is called for short RIE) or inductively coupled plasma etching (Inductively Coupled Plasma is called for short ICP), non-waveguide region is etched away, form waveguide core layer, as shown in Figure 1;
6) remove photoresist, adopt FHD or CVD technology, on waveguide core layer, cover one deck SiO2 again, as the waveguide top covering, as shown in Figure 2;
7), make top covering SiO2 become evenly fine and close by the annealing hardening process;
8) cleavage goes out a plurality of planar optical waveguide device chips from the silicon chip wafer, then according to each self-application encapsulation.
Several Key Points in the silicon dioxide planar optical waveguide technology:
1) etching technics will obtain steep and smooth waveguide sidewalls, to reduce the scattering loss of waveguide;
2) material growth and annealing hardening process will make the thickness of every layer material and refractive index is even and accurately, to reach the waveguiding structure parameter of design, reduce the residual stress of material internal as far as possible, to reduce the birefringence effect of waveguide;
3) covering covering process is wanted the interval between the complete filling waveguide core layer.Well-known AWG making difficulty is exactly the space filling between waveguide core layer.
The 3rd critical technological point mentioned above, particularly important for the waveguiding structure of high aspect ratio, as array waveguide grating, optical branching device etc., otherwise the existence in space can increase the scattering loss of these waveguide devices and influence phase information.Below this problem will be described.Fig. 1 is the core structure schematic cross-section of the planar optical waveguide device of high aspect ratio, the 1st, and silicon dioxide under-clad layer, 2 expression waveguide core layer (as 16 passage AWG).Fig. 2 has described the complete structure of planar optical waveguide device, and waveguide core layer 2 is covered by silicon dioxide top covering 3, has shown that also top covering deposits existing problem, and still there are cavity 4 formation between waveguide in the space between sandwich layer by partially filled.When deposition of silica waveguide top covering,, pendle (overhangs) can occur and strengthen the space that capture-effect (shadowing effect) can't be filled top covering sealing ahead of time and generation if the waveguide spacing is less.Waveguide array as array waveguide grating only is 1-2 μ m with the waveguide spacing of importing the waveguide zone intersection, and the existence in cavity 4 can greatly influence the every performance, particularly loss of AWG between waveguide this moment.And for the waveguiding structure of high aspect ratio, aspect ratio at interval is big more, and it is difficult more that fill in the space.
People such as GC Schwartz at " Gap-Fill with PECVD SiO2 Using Deposition/SputterEtch Cycles; " Journal of the Electrochemical Society, vol.139, no.3, pp.927-932, a solution is proposed, by periodically deposition and argon gas ise realize that the PECVD deposition causes the filling in space in 1992.The top covering material that elder generation's deposition rate is thin, the argon gas physical etchings is carved the nearly sealing covering on top, gap again, and then the claddingmode of deposition of thin, avoids the cavity to form so repeatedly, reaches suitable thickness up to top covering.But a large amount of deposition/etch cycles has increased complicacy and Production Time that the preparation worker is equipped with, reduced productive capacity, and the density of sandwich layer interval region is lower.
Another kind of more rare method is that people such as Japanese S.Kashimura puts forward, as " Lossreduction of GeO2-doped silica waveguide with high refractive index difference byhigh-temperature annealing; " Jpn.J.Appl.Phys., vol.39, pp.521-523, described in 2000, after the sandwich layer etching is removed photoresist, with hot mastication sandwich layer near 1400 ℃, make original square sandwich layer waveguide become circular arc, help next step top covering deposition like this.Though this method has been avoided empty generation, the space that must fill between waveguide in full force and effect is because the change of core structure has reduced the optical property of waveguide.
At present, a kind of solution commonly used both at home and abroad be to use the top covering of boron-doping and phosphorus (Boro-phospho-silicate Glass, BPSG).The fusing point of doping back top covering is lower than sandwich layer and under-clad layer, therefore can pass through high-temperature thermal annealing, makes approximate liquid top covering backflow fill the space.But this method has additionally been used a kind of hypertoxic gas phosphine, and the phosphorus ratio is easier to make moist, and this has increased the danger of technology and the instability of product.
Summary of the invention
At disadvantages of background technology, the object of the present invention is to provide a kind of silicon dioxide optical waveguide device and preparation method based on B-Ge-codoped upper cladding, top covering is realized the filling in the high aspect ratio space between adjacent sandwich layer waveguide by doped with boron germanium, satisfies the requirement with the waveguide core layer refringence simultaneously.
The present invention is achieved through the following technical solutions:
One, a kind of silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding:
Deposition of silica under-clad layer in substrate, behind the silica membrane of under-clad layer upper surface dopant deposition germanium, forming the cross section by photoetching, etching technics is square waveguide core layer; It is characterized in that: deposit the silicon dioxide top covering that one deck is mixed with boron and two kinds of elements of germanium at the silicon dioxide under-clad layer and above the waveguide core layer, do not have the space between top covering and the sandwich layer waveguiding structure.
Described deposition is mixed with the silicon dioxide top covering of boron and two kinds of elements of germanium, and is consistent with silicon dioxide under-clad layer refractive index, and silicon dioxide top covering fusing point and refractive index all are lower than waveguide core layer.
Two, a kind of preparation method of the silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding:
Deposition of silica under-clad layer in substrate forms waveguide core layer by photoetching, etching technics behind dopant deposition SiO 2 waveguide sandwich layer on the under-clad layer;
(1) forms the layer of silicon dioxide top covering that covers the waveguide core layer structure by doped with boron germanium deposition;
(2) carrying out 900 ℃ of-1100 ℃ of high-temperature thermal annealings of nitrogen or oxygen or ar gas environment handles.Heating-up time is 15-30 minute, constant temperature 15-30 minute, and cooling naturally in annealing furnace then, pendle is softening to be flowed into the position, interval of adjacent sandwich layer and forms domatic;
(3) carry out above repeatedly B-Ge-codoped silica membrane deposition and high-temperature thermal annealing cycle of treatment, reach the complete filling in space between adjacent waveguide afterwards and satisfy the cladding thickness 12-15 μ m that optics requires.
Described silicon dioxide top covering passes through plasma enhanced chemical vapor deposition.
Described silicon dioxide top covering deposition gases comprises B
2H
6, GeH
4, SiH
4, N
2O, wherein B
2H
6: SiH
4Flow proportional was greater than 1: 2.
The present invention compares with background technology, and the beneficial effect that has is:
1, eliminates the existence in space, reduced the scattering loss of waveguide device.
Since the common method of 2 deposition waveguide core tunics all is to use germane silane laughing gas etc., with the Ge-doped refractive index that improves sandwich layer, so than BPSG, the use of extra hypertoxic gas phosphine has been avoided in the preparation of structure of the present invention, has reduced the technology cost and has also improved stability.
3, compare with the method for GC Schwartz, the preparation of structure of the present invention has reduced the complexity of technology respectively, has improved the stability of technology.And the method that proposes with respect to S.Kashimura, the present invention can not influence the performance of waveguide core layer own, so there is not spinoff.
4, boron germanium---the photoactive substance because top covering has mixed is so have potential advantages such as the photosensitivity of enhancing based on the Bragg grating device of structure of the present invention.
SiO 2 waveguide device architecture based on B-Ge-codoped upper cladding of the present invention, have low cost, high-performance and multi-functional characteristics, very big application prospect is arranged in fields such as planar optical waveguides, as being widely used in shunt (Splitter), coupling mechanism (Coupler) and array waveguide grating (Array Waveguide Grating, AWG) device of contour aspect ratio waveguides structure.
Description of drawings
Fig. 1 is the structural section synoptic diagram of waveguide core layer after the etching in the background technology.
Fig. 2 is the waveguiding structure schematic cross-section that there is the cavity in top covering in the background technology.
Fig. 3 is the waveguiding structure schematic cross-section behind the B-Ge-codoped silica membrane of embryo deposit of the present invention.
Fig. 4 is the waveguiding structure schematic cross-section of waveguiding structure after high-temperature thermal annealing is handled behind the B-Ge-codoped silica membrane of embryo deposit of the present invention.
Fig. 5 is that the silicon dioxide optical waveguide device that the present invention is based on B-Ge-codoped upper cladding is realized the structural section synoptic diagram that fill in adjacent sandwich layer waveguide gap.
Among the figure: 1, silicon dioxide under-clad layer, 2, waveguide core layer, 3, the silicon dioxide top covering, 4, cavity between waveguide, 5, pendle (overhangs), 6, domatic (angled surfaces).
Embodiment
As shown in Figure 5, the present invention is deposition of silica under-clad layer 1 in substrate, and behind the silica membrane of under-clad layer 1 upper surface dopant deposition germanium, forming the cross section by photoetching, etching technics is square waveguide core layer 2; Deposit the silicon dioxide top covering 3 that one deck is mixed with boron and two kinds of elements of germanium at silicon dioxide under-clad layer 1 and above the waveguide core layer 2, do not have the space between top covering 3 and sandwich layer waveguide 2 structures.
Described deposition is mixed with the silicon dioxide top covering 3 of boron and two kinds of elements of germanium, and is consistent with silicon dioxide under-clad layer 1 refractive index, and silicon dioxide top covering 3 fusing points and refractive index all are lower than waveguide core layer 2.
The invention describes a kind of silicon dioxide optical waveguide device structure based on B-Ge-codoped upper cladding, by depositing B-Ge-codoped top covering and high-temperature thermal annealing, fill in the gap between the sandwich layer of realization adjacent waveguide projection, avoids the cavity to form.
Below with reference to the accompanying drawings, describe the present invention in detail, Fig. 1, Fig. 3, Fig. 4, Fig. 5 are the present invention is prepared as example with PECVD embodiments.
Figure 1 shows that the waveguide core layer structural section synoptic diagram that etching forms.At first using plasma strengthens chemical vapor deposition method (PECVD), and cvd silicon dioxide film in substrate is as silicon dioxide under-clad layer 1; And then the employing pecvd process, dopant deposition silica membrane on under-clad layer, as waveguide core layer, wherein the doped germanium ion obtains the refringence that needs; Carry out technologies such as photoetching, etching again and form waveguide core layer 2.Wherein the waveguide sidewalls requirement is steep and smooth, otherwise will cause the scattering loss of waveguide, reduces waveguide Transmission Characteristics.
Remove residual photoresist in the waveguide then, if directly adopt the thick pure silicon dioxide top covering 3 of the about 9-15 μ of pecvd process deposition one deck m to cover waveguide core layer 2, as shown in Figure 2, be positioned at so the top covering material at the interval of adjacent waveguide sandwich layer 2 can be because capture-effect occurs that the top covering pendle seals in advance lower floor can't fill and occur between waveguide empty 4.Especially for the waveguiding structure of high aspect ratio, adjacent waveguide is less at interval, and sandwich layer height of projection condition with higher, then the space is filled difficult more.For example, the Waveguide array of array waveguide grating generally only is 1-2 μ m with the waveguide spacing of input waveguide zone intersection, and the waveguide core layer height is generally 6 μ m, be that aspect ratio is 3-6 (belonging to high aspect ratio), the existence in cavity can greatly influence the every performance, particularly loss of AWG between waveguide this moment.
So cover existing the problems referred to above in order to improve the silicon dioxide top covering, the present invention proposes a kind of silicon dioxide optical waveguide device structure based on B-Ge-codoped upper cladding.
As shown in Figure 3, deposition of silica under-clad layer 1 in substrate; Behind dopant deposition SiO 2 waveguide sandwich layer on the under-clad layer, form sandwich layer waveguiding structure 2 by technologies such as photoetching, etchings; Form the layer of silicon dioxide top covering 3 (GeBSG) that covers the waveguide core layer structure by doped with boron germanium deposition, described B-Ge-codoped silicon dioxide top covering 3 to satisfy fusing point be lower than sandwich layer and with the requirement of sandwich layer refringence.
Adjust the deposition gases ratio, can change the refractive index and the fusing point of this synthetic glass, but the boron that mixes, the capability of influence of germanium refractive index is different, basically difference is so big and to the capability of influence of material melting point, so adopt heavily doped boron element to reduce fusing point, suitably the doped germanium element just can have been adjusted refractive index then, germane when wherein depositing waveguide core layer 2, silane, the nitrous oxide gas flow is respectively 3sccm, 17sccm, 2000sccm, germane during deposition of silica top covering 3, borine, silane, the nitrous oxide gas flow is respectively 0.6sccm, 7.5sccm, 10sccm, 2000sccm, its suitable thickness are approximately 3 μ m.Because top covering pendle 5 can appear in capture-effect.
Afterwards, carrying out 900 ℃ of-1100 ℃ of high-temperature thermal annealings of other gaseous environments such as nitrogen or oxygen handles.Heating-up time is 15-30 minute, constant temperature 15-30 minute, and cooling naturally in annealing furnace then.The result as shown in Figure 4, the pendle 5 softening positions, interval that flow into adjacent sandwich layer among original Fig. 3 also formed domatic 6 among Fig. 4.So for next step covering deposits the influence that alleviates capture-effect, thereby can better fill the space between waveguide.Annealing can influence the under-clad layer and the sandwich layer of waveguide simultaneously, causes their variations in refractive index, so just must consider the two variations in refractive index after annealing when under-clad layer, sandwich layer deposition.Often need to carry out repeatedly the B-Ge-codoped silica membrane deposition of round-robin and handle, just can reach the complete filling in space between adjacent waveguide and satisfy the cladding thickness 12-15 μ m that optics requires, as shown in Figure 5 with high-temperature thermal annealing.
The embodiment of the B-Ge-codoped SiO 2 waveguide device architecture of describing according to the present invention, top covering has been realized the filling in the high aspect ratio space between adjacent sandwich layer waveguide by doped with boron germanium, the spacing of waveguide core layer is less than 2 microns, and the gap aspect ratio of adjacent sandwich layer is greater than 3.Therefore a kind of silicon dioxide optical waveguide device structure based on B-Ge-codoped upper cladding of the present invention's proposition is applicable to array waveguide grating (AWG) and shunt devices such as (Splitter) fully.
The foregoing description is used for the present invention that explains, rather than limits the invention, and in the protection domain of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (5)
1. silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding, deposition of silica under-clad layer in substrate, behind the silica membrane of under-clad layer upper surface dopant deposition germanium, forming the cross section by photoetching, etching technics is square waveguide core layer; It is characterized in that: deposit the silicon dioxide top covering that one deck is mixed with boron and two kinds of elements of germanium at the silicon dioxide under-clad layer and above the waveguide core layer, do not have the space between top covering and the sandwich layer waveguiding structure.
2. a kind of silicon dioxide optical waveguide device according to claim 1 based on B-Ge-codoped upper cladding, it is characterized in that: described deposition is mixed with the silicon dioxide top covering of boron and two kinds of elements of germanium, consistent with silicon dioxide under-clad layer refractive index, and silicon dioxide top covering fusing point and refractive index all are lower than waveguide core layer.
3. the preparation method of a kind of silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding according to claim 1, deposition of silica under-clad layer in substrate forms waveguide core layer by photoetching, etching technics behind dopant deposition SiO 2 waveguide sandwich layer on the under-clad layer; It is characterized in that:
(1) forms the layer of silicon dioxide top covering that covers the waveguide core layer structure by doped with boron germanium deposition;
(2) carrying out 900 ℃ of-1100 ℃ of high-temperature thermal annealings of nitrogen or oxygen or ar gas environment handles.Heating-up time is 15-30 minute, constant temperature 15-30 minute, and cooling naturally in annealing furnace then, pendle is softening to be flowed into the position, interval of adjacent sandwich layer and forms domatic;
(3) carry out above repeatedly B-Ge-codoped silica membrane deposition and high-temperature thermal annealing cycle of treatment, reach the complete filling in space between adjacent waveguide afterwards and satisfy the cladding thickness 12-15 μ m that optics requires.
4. a kind of silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding according to claim 3 is characterized in that: described silicon dioxide top covering passes through plasma enhanced chemical vapor deposition.
5. a kind of silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding according to claim 3 is characterized in that: described silicon dioxide top covering deposition gases throughput ratio is B
2H
6: GeH
4: SiH
4: N
2O=6-8: 0.6: 10: 2000.
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| CN102109639A (en) * | 2010-11-19 | 2011-06-29 | 杭州天野通信设备有限公司 | Preparation method of chip based on planar light-wave circuit (PLC) splitter |
| CN102736177A (en) * | 2012-06-29 | 2012-10-17 | 无锡思力康光子科技有限公司 | Array waveguide grating structure based on PLC (programmable logic controller) technique and manufacturing method thereof |
| CN103502853A (en) * | 2011-03-25 | 2014-01-08 | 李谞荣 | Lightwave circuit and method of manufacturing same |
| CN104360441A (en) * | 2014-10-30 | 2015-02-18 | 成都康特电子高新科技有限责任公司 | Silicon-dioxide optical waveguide production process for manufacturing optical divider |
| CN104635298A (en) * | 2015-02-11 | 2015-05-20 | 深圳太辰光通信股份有限公司 | Planar optical waveguide and manufacturing method thereof |
| CN105759352A (en) * | 2015-07-03 | 2016-07-13 | 苏州峰通光电有限公司 | Heat-insensitive planar optical waveguide and preparation method thereof |
| CN110286440A (en) * | 2019-05-20 | 2019-09-27 | 武汉光迅科技股份有限公司 | The production method of planar optical waveguide chip |
| CN111208606A (en) * | 2020-01-13 | 2020-05-29 | 中国科学院微电子研究所 | Optical waveguide and manufacturing method thereof |
| CN111983750A (en) * | 2020-08-28 | 2020-11-24 | 济南晶正电子科技有限公司 | Silicon dioxide loaded strip-shaped optical waveguide integrated structure and preparation method thereof |
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| CN103502853A (en) * | 2011-03-25 | 2014-01-08 | 李谞荣 | Lightwave circuit and method of manufacturing same |
| CN102736177A (en) * | 2012-06-29 | 2012-10-17 | 无锡思力康光子科技有限公司 | Array waveguide grating structure based on PLC (programmable logic controller) technique and manufacturing method thereof |
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| CN110286440A (en) * | 2019-05-20 | 2019-09-27 | 武汉光迅科技股份有限公司 | The production method of planar optical waveguide chip |
| CN111208606A (en) * | 2020-01-13 | 2020-05-29 | 中国科学院微电子研究所 | Optical waveguide and manufacturing method thereof |
| CN111983750A (en) * | 2020-08-28 | 2020-11-24 | 济南晶正电子科技有限公司 | Silicon dioxide loaded strip-shaped optical waveguide integrated structure and preparation method thereof |
| CN111983750B (en) * | 2020-08-28 | 2022-08-19 | 济南晶正电子科技有限公司 | Silicon dioxide loaded strip-shaped optical waveguide integrated structure and preparation method thereof |
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Correction item: Patentee|Address Correct: Hangzhou Rand Puguang Electronic Technology Co., Ltd.|310013 525 Xixi Road, Xihu District, Hangzhou, Zhejiang. False: Hangzhou base Photoelectric Technology Co., Ltd.|310013 525 Xixi Road, Xihu District, Hangzhou, Zhejiang. Number: 17 Volume: 29 |