CN101857460A - Preparation method of carbon nano tube array for spinning - Google Patents

Preparation method of carbon nano tube array for spinning Download PDF

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Publication number
CN101857460A
CN101857460A CN201010176982A CN201010176982A CN101857460A CN 101857460 A CN101857460 A CN 101857460A CN 201010176982 A CN201010176982 A CN 201010176982A CN 201010176982 A CN201010176982 A CN 201010176982A CN 101857460 A CN101857460 A CN 101857460A
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carbon nano
preparation
nano tube
growth
carbon
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勇振中
徐耿
李清文
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Suzhou Creative Carbon Nanotechnology Co ltd
SUZHOU NAFANG TECHNOLOGY DEVELOPMENT CO LTD
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Abstract

The invention discloses a preparation method of a carbon nano tube array for spinning, comprising the following steps of: preparing an oxide buffer layer on a precast silicon substrate and depositing a metal catalyst film on the oxide buffer layer to form a carbon nano tube array growth catalytic structure with composite activity; heating a reaction furnace to the growth temperature of the carbon nano tube in an environment of protective gas; introducing ethylene and carrier gas to the reaction furnace by controlling the flow and the proportion to grow the carbon nano tube array under normal pressure; and finally quickly finishing the growth of the carbon nano tube array. By adopting the application of ethylene CVD preparation method, a catalyst buffer layer structure is prepared by an ion beam assistant deposition method, and the metal catalyst film thickness and the growth technological parameter are controlled. The obtained carbon nano tube array has the advantages of small diameter of the carbon nano tube, small number of tube walls, high carbon tube surface distribution density on the substrate and is useful in high-area preparation, therefore, the invention provides possibility for the application of the carbon nano tube in the industrial spinning manufacturing.

Description

The preparation method of carbon nano tube array for spinning
Technical field
But the present invention relates to a kind of preparation method of big area spinning carbon nano pipe array, belong to field of nano material preparation.
Background technology
Carbon nanotube (CNT) has excellent mechanical property: its tensile strength reaches 50~200GPa, is 100 times of steel, and density but has only 1/6 of steel, and the theoretical Young's modulus of carbon nanotube can reach 1TPa, thereby is called as " super fiber ".Carbon nanotube has excellent conducting performance in addition, because its special graphite laminate structure presents different electrical properties and conductive capability, but and electricity modulating performance with excellence.Therefore, adopt carbon nanotube to make up the important directions that novel mechanics, electricity, optical function device become the carbon nanomaterial development.
In recent years, people are obtaining the progress of advancing by leaps and bounds aspect controlled preparation of carbon nanotube and the package technique.Wherein the carbon nano pipe array material has been subjected to people's extensive concern owing to having consistent self-assembly orientation characteristic, has obtained progress in the application facet of preparation of carbon nano pipe array device and matrix material.2002, but China's model is kept kind academician research group and has been reported first on the Nature magazine with vertical spinning carbon nano-pipe array and classify the basis as, can carry out continuous spinning to the solid carbon nano-tube array, process a kind of filamentary material that constitutes by pure nano-carbon tube, started the frontier [document 1] of carbon nano-tube material package technique research.
At present, but generally adopting acetylene and ethene aspect the preparation of spinning carbon nano pipe array is carbon-source gas [document 1,2], is catalyzer with the metallic particles at the bottom of the silicon wafer-based, method by thermal chemical vapor deposition (TCVD) is prepared, and is called acetylene CVD method and ethene CVD method.But the spinning of acetylene gas preparation at present carbon nano pipe array technology has obtained breakthrough, but China's model is kept the preparation that the Baughman research group of the kind study group and the U.S. has realized the spinning carbon nano pipe array, and further amplify, but realized the preparation of large-area high-quality spinning carbon nano pipe array to the array aufwuchsplate is long-pending.Processed carbon nano-tube film by the way of dry-spinning on this basis, and successively be applied to the preparation of loud speaker [document 3], transparent conductive film [document 4], artificial-muscle carbon nanotube functional devices such as [documents 5], showed very application prospects of this material.But and aspect ethene CVD preparation spinning carbon nano pipe array, people such as Li Qingwen are by the improvement to catalyst structure, realized overlength (greater than 1mm) but the preparation of spinning carbon nano pipe array, and processing has obtained high-intensity carbon nano-tube fibre material [document 6].Yet up to the present, but aspect ethylene gas preparation spinning carbon nano pipe array, the large-area preparation technology still achieves no breakthrough, and does not more realize the membrane technology of carbon nano pipe array.
In addition, but with respect to acetylene CVD preparation spinning carbon nano pipe array, the catalyst structure that ethene CVD growth is adopted is more complicated, growth temperature is higher, and therefore the nucleation process of granules of catalyst and activity of such catalysts, life-span are different from acetylene CVD array preparation in the catalyst pretreatment process.Simultaneously, also there are very big-difference in the split product of ethylene gas and acetylene gas split product, have caused the difference of tube wall number, caliber, defect concentration and physics, the chemical property etc. of two kinds of carbon-source gas carbon nanotubes grown thus.But therefore adopt ethene CVD growing large-area spinning carbon nano pipe array material, existing the potential using value aspect the preparation of carbon nanotube functional device.
[document 1]: Jiang, K.L.; Li, Q.Q.; Fan, S.S., Nanotechnology:Spinning continuous carbonnanotube yarns-Carbon nanotubes weave their way into a range of imaginative macroscopicapplications.Nature 2002,419,801.
[document 2]: Li, Q.W.; Zhang, X.F.; DePaula, R.F.; Zheng, L.X.; Zhao, Y.H.; Stan, L.; Holesinger, T.G.; Arendt, P.N.; Peterson, D.E.; Zhu, Y.T., Sustained growth of ultralong carbonnanotube arrays for fiber spinning.Advanced Materials 2006,18,3160.
[document 3]: Xiao, L.; Chen, Z.; Feng, C.; Liu, L.; Bai, Z.Q.; Wang, Y.; Qian, L.; Zhang, Y.Y.; Li, Q.Q.; Jiang, K.L.; Fan, S.S., Flexible, Stretchable, Transparent Carbon Nanotube Thin FilmLoudspeakers.Nano Letters 2008,8,4539.
[document 4]: Feng, C., Liu, K., Wu, J.S., Liu, L., Cheng, J.S., Zhang, Y.Y., Sun, Y.H., Li, Q.Q., Fan, S.S., Jiang K.L., Flexible, Stretchable, Transparent Conducting FilmsMade from SuperalignedCarbon Nanotubes.Advance Functional Materials 2010,20,1.
[document 5]: Aliev, A.E.; Oh, J.Y.; Kozlov, M.E.; Kuznetsov, A.A.; Fang, S.L.; Fonseca, A.F.; Ovalle, R.; Lima, M.D.; Haque, M.H.; Gartstein, Y.N.; Zhang, M.; Zakhidov, A.A.; Baughman, R.H., Giant-Stroke, Superelastic Carbon Nanotube Aerogel Muscles.Science 2009,323,1575.
[document 6]: Zhang, X.F.; Li, Q.W.; Tu, Y.; Li, Y.A.; Coulter, J.Y.; Zheng, L.X.; Zhao, Y.H.; Jia, Q.X.; Peterson, D.E.; Zhu, Y.T., Strong carbon-nanotube fibers spun from long carbon-nanotube arrays.Small 2007,3,244.
Summary of the invention
But for further going deep into the application of ethene CVD growing large-area spinning carbon nano pipe array material, purpose of the present invention aims to provide a kind of preparation method of carbon nano tube array for spinning, thereby make the carbon nano pipe array height and the structure that make have uniformity consistency, and can process and obtain carbon nano-tube fibre and carbon nano-tube film.
Above-mentioned purpose of the present invention, the technical scheme of realization is:
The preparation method of carbon nano tube array for spinning, it is characterized in that may further comprise the steps: at first on the ready-formed silicon base, prepare oxide buffer layer, metal refining catalyst film thereon forms the growing mixed catalytic structure of the highly active carbon nano pipe array of tool again; Then the carbon nano tube growth temperature of temperature reaction stove to 700 ℃~800 ℃ under the shielding gas environment; Dominant discharge and ratio feed ethene and carrier gas in Reaktionsofen then, carry out the carbon nano pipe array growth under the normal pressure; Wait to grow and in 1 minute, finish rapidly the growth of carbon nano pipe array after finishing.
Further, among the preparation method of above-mentioned carbon nano tube array for spinning:
The prefabricated of silicon base described in the step I is meant at area greater than 1cm 2Silicon wafer on generate the silicon-dioxide zone of oxidation of thickness 0.1 μ m~1 μ m.Adopting the Assisted by Ion Beam method of evaporation to prepare thickness is the oxide buffer layer that 5nm~100nm has disordered structure; And at oxide buffer layer surface preparation thickness the metal catalytic agent film of 0.4nm~5nm iron, cobalt or nickel by electron-beam vapor deposition method.
Used shielding gas environment is by rare gas element and H in the Step II 2Mixing build and to form.
Used carbon-source gas is an ethene among the Step II I, and the dividing potential drop scope of described carbon-source gas is 5%~40%; The growth pattern of described carbon nano pipe array is the growth of normal pressure bottom.
The method that finishes the carbon nano pipe array growth described in the step IV refers to and reduces carbon nano pipe array sample temperature in the Reaktionsofen, or reduces the carbon source content around the carbon nano pipe array sample.
Implement technical scheme of the present invention, the advantage that compares to acetylene CVD preparation method is:
The present invention adopts ethene CVD method, be equipped with the catalyzer buffer layer structure by the ion beam assisted depositing legal system, and in conjunction with passing through control metal catalyst film thickness and growthing process parameter, prepared carbon nano pipe array have that the carbon nanotube caliber is little, the tube wall number is few and substrate on the high and advantage that is applied to large-area preparation of carbon tube-surface distribution density, for carbon nanotube is applied to that the industrial spinning manufacturing provides may.
For the preparation method who makes carbon nano tube array for spinning of the present invention is easier to understand the practicality of its substantive distinguishing features and institute's tool thereof, below constipation close accompanying drawing the some specific embodiments of the present invention be described in further detail.But following description and explanation about embodiment do not constitute any limitation protection domain of the present invention.
Description of drawings
But Fig. 1 is a big area spinning carbon nano pipe array preparation method's of the present invention schematic flow sheet;
Fig. 2 is the method synoptic diagram of Preparation of Catalyst among the preparation method of the present invention;
Fig. 3 carbon nano tube array for spinning synoptic diagram and stereoscan photograph that to be the present invention prepare at the bottom of 4 inches silicon wafer-based;
Fig. 4 is the transmission electron microscope photo of carbon nano pipe array shown in Figure 3;
Fig. 5 is that the carbon nano pipe array that the present invention makes carries out the synoptic diagram that membrane obtains carbon nano-tube film;
Fig. 6 is that the carbon nano pipe array that the present invention makes carries out the synoptic diagram that wire drawing obtains carbon nano-tube fibre.
Embodiment
In view of the tube wall number, caliber, defect concentration and the physics that utilize ethene CVD carbon nano-tube, chemical property etc. all are different from the product of acetylene CVD, it has a extensive future.But for breaking through the bottleneck that ethene CVD method prepares the carbon nano pipe array of big area spinning, invention of the present invention team is through hammer away, and exploitation has finally obtained the preparation method of this spinning with nano-tube array, this preparation method's good reproducibility, and be easy to amplify and implement; But due to be can be used for preparing type materials such as transparent conductive film and high-performance carbon nanotube fiber by the big area spinning carbon nano pipe array that obtained.
Specifically: preparation method's of the present invention performing step is shown in the schematic flow sheet of Fig. 1, mainly comprise four steps, be respectively: at first on the ready-formed silicon base, prepare oxide buffer layer, metal refining catalyst film thereon again forms the carbon nano pipe array growth catalytic structure of tool composite reactive; Then the carbon nano tube growth temperature of temperature reaction stove to 700 ℃~800 ℃ under the shielding gas environment; Dominant discharge and ratio feed ethene and carrier gas in Reaktionsofen then, carry out the carbon nano pipe array growth under the normal pressure; Wait to grow and in 1 minute, finish rapidly the growth of carbon nano pipe array after finishing.
And from Fig. 1, step I of the present invention also can further be refined as two steps of preparation of the prefabricated and catalytic film of silicon base.Wherein, the prefabricated of silicon base is meant at area greater than 1cm 2Silicon wafer (present embodiment is selected the silicon wafer of 4 inches sizes for use) go up to generate the silicon-dioxide zone of oxidation of thickness 0.1 μ m~1 μ m; And the preparation of catalytic film is the film of iron, cobalt, nickel or the three's mixture of the layer thickness 0.4nm~5nm that forms by electron-beam vapor deposition method on the aforementioned silicon base that makes.But for the activity and the life-span of improving this metal catalytic agent film, way of the present invention is to introduce oxide buffer layers such as aluminum oxide, magnesium oxide between metal catalytic agent film and silicon base, guarantees that with this array of institute's carbon nanotubes grown has suitable stand density, orientation degree and length homogeneity character.The dense oxide with disordered structure for preparing for the method by Assisted by Ion Beam evaporation (IBAD) of this oxide buffer layer wherein, thickness is between 5nm~100nm.
Finish on the silicon base after the preparation of metal catalytic agent film, this base material for preparing is being put into the crystal reaction tube of 5 inches of diameters, the Ar/H at 4: 1 2Under the shielding gas environment base material is heated to growth temperature (this growth temperature range between 700 ℃~800 ℃, in the present embodiment preferred 750 ℃).The metal catalytic agent film is under the shielding gas environment, at aluminum oxide buffer-layer surface homogeneous nucleation.Treat that sample temperature feeds the carbon-source gas dividing potential drop after stable between 5%~40% ethylene gas (present embodiment selects 15% for use, and carrier gas is 5% hydrogen and 80% argon gas), growth time is 10min, and total gas flow rate is 2L/min.After treating that growth finishes, by vacuum pump the reaction silica tube is vacuumized, vacuum tightness reaches about 1Pa rapidly in 10 seconds.By the exhaust of vacuum pump, can reduce metal catalytic agent film carbon-source gas on every side rapidly, reach the way of quick end carbon nano pipe array growth.At last, the preparation sample is cooled to room temperature under the argon shield environment, take out sample.
As shown in Figure 3, the carbon nano pipe array sample that the present invention obtains by normal pressure bottom growing and preparing, carbon nano pipe array has the structure of homogeneous, and scanning electron microscope analysis shows that this carbon nano pipe array has super suitable arrangement architecture, and the array height is about 400 μ m.Getting the small part carbon nano-pipe array is listed in the ethanolic soln after the ultra-sonic dispersion, in transmission electron microscope, the structure of carbon nanotube in the carbon nano pipe array is analyzed, analytical results as shown in Figure 4, the carbon nanotube caliber mainly is distributed in 4nm to 7nm in the array, the tube wall number is 3 to 6 walls.
Finish the method for carbon nano pipe array growth in the 4th step rapidly, except that above-mentioned vacuumizing of mentioning---reduce rapidly the method for metal catalytic agent film carbon-source gas on every side, also can reduce carbon nano pipe array sample temperature in the Reaktionsofen, under environment far below growth temperature, this growth response also can stop at once, thereby keeps stand density, orientation degree and the length homogeneity of carbon nano pipe array.
By carbon nano pipe array is carried out spinning, experimental result shows that the carbon nano pipe array of this method preparation has extraordinary continuous spinning character.By the method for direct membrane spinning, can obtain uniform carbon nano-tube fibre material of diameter and carbon nano-tube film material (as Fig. 5, shown in Figure 6).But can be applied to the preparation of superpower carbon nano-tube fibre and carbon nano tube transparent conductive thin-film by the spinning carbon nano pipe array of present method preparation.
Below only be concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.

Claims (7)

1. the preparation method of carbon nano tube array for spinning is characterized in that may further comprise the steps:
I, prepare oxide buffer layer on the ready-formed silicon base, metal refining catalyst film thereon again forms the carbon nano pipe array growth catalytic structure of tool composite reactive;
II, under the shielding gas environment carbon nano tube growth temperature of temperature reaction stove to 700 ℃~800 ℃;
The carbon nano pipe array growth is carried out in III, dominant discharge and ratio feeding ethene and carrier gas in Reaktionsofen under the normal pressure;
IV, wait to grow and in 1 minute, finish rapidly the growth of carbon nano pipe array after finishing.
2. the preparation method of carbon nano tube array for spinning according to claim 1, it is characterized in that: the prefabricated of silicon base described in the step I is meant at area greater than 1cm 2Silicon wafer on generate the silicon-dioxide zone of oxidation of thickness 0.1 μ m~1 μ m.
3. the preparation method of carbon nano tube array for spinning according to claim 1 is characterized in that: adopting the Assisted by Ion Beam method of evaporation to prepare thickness among the step I is the oxide buffer layer that 5nm~100nm has disordered structure; And at oxide buffer layer surface preparation thickness the metal catalytic agent film of 0.4nm~5nm iron, cobalt or nickel by electron-beam vapor deposition method.
4. the preparation method of carbon nano tube array for spinning according to claim 1, it is characterized in that: used shielding gas is rare gas element and H in the Step II 2Mixed gas.
5. the preparation method of carbon nano tube array for spinning according to claim 1, it is characterized in that: used carbon-source gas is an ethene among the Step II I, the dividing potential drop scope of described carbon-source gas is 5%~40%.
6. the preparation method of carbon nano tube array for spinning according to claim 1 is characterized in that: the growth pattern of carbon nano pipe array described in the Step II I is the growth of normal pressure bottom.
7. the preparation method of carbon nano tube array for spinning according to claim 1, it is characterized in that: the method that finishes the carbon nano pipe array growth described in the step IV refers to and reduces carbon nano pipe array sample temperature in the Reaktionsofen, or reduces the carbon source content around the carbon nano pipe array sample.
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522214A (en) * 2011-12-09 2012-06-27 复旦大学 Carbon nanotube fiber-based linear dye-sensitized solar cell and preparation method thereof
CN103058164A (en) * 2011-10-20 2013-04-24 苏州捷迪纳米科技有限公司 Preparation method of single-walled carbon nanotube
CN103909715A (en) * 2014-03-28 2014-07-09 复旦大学 Preparation method of solvent-induced reversibly oriented transformation conjugated polymer and carbon nano tube composite film
CN104085875A (en) * 2014-06-06 2014-10-08 华为技术有限公司 Preparing method of high-density carbon nano tube array
CN108532287A (en) * 2018-03-30 2018-09-14 深圳烯湾科技有限公司 The surface modification method of carbon nano-tube fibre
CN109563649A (en) * 2017-02-03 2019-04-02 株式会社Lg化学 The carbon nano-tube fibre for being used to prepare the method for carbon nano-tube fibre and thus preparing
CN109553087A (en) * 2018-12-12 2019-04-02 深圳烯湾科技有限公司 Modified carbon nano-tube array, carbon nano-tube fibre and its preparation method and application
CN111455339A (en) * 2020-05-22 2020-07-28 厦门市计量检定测试院 Preparation method of vertical carbon nanotube array for high-absorption-ratio material
CN113307252A (en) * 2021-06-18 2021-08-27 常州大学 Method for preparing spinnable super-ordered carbon nanotube array
CN113690457A (en) * 2021-08-23 2021-11-23 中汽创智科技有限公司 Spinning solution for fuel cell and preparation method of carbon paper of spinning solution

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US6689674B2 (en) * 2002-05-07 2004-02-10 Motorola, Inc. Method for selective chemical vapor deposition of nanotubes
CN1483668A (en) * 2002-09-17 2004-03-24 清华大学 Carbon nano pipe array growth method
CN1603231A (en) * 2003-09-30 2005-04-06 鸿富锦精密工业(深圳)有限公司 Method for controlling growth density of carbon nanometer tube
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103058164A (en) * 2011-10-20 2013-04-24 苏州捷迪纳米科技有限公司 Preparation method of single-walled carbon nanotube
CN102522214A (en) * 2011-12-09 2012-06-27 复旦大学 Carbon nanotube fiber-based linear dye-sensitized solar cell and preparation method thereof
CN103909715A (en) * 2014-03-28 2014-07-09 复旦大学 Preparation method of solvent-induced reversibly oriented transformation conjugated polymer and carbon nano tube composite film
CN103909715B (en) * 2014-03-28 2016-03-16 宁国市龙晟柔性储能材料科技有限公司 Solvent-induced reversible directional deformation conjugated polymer and carbon nano-tube coextruded film preparation method
CN104085875A (en) * 2014-06-06 2014-10-08 华为技术有限公司 Preparing method of high-density carbon nano tube array
CN104085875B (en) * 2014-06-06 2016-08-24 华为技术有限公司 A kind of preparation method of high-density carbon nano-tube array
US11136711B2 (en) 2017-02-03 2021-10-05 Lg Chem, Ltd. Method for preparing carbon nanotube fiber and carbon nanotube fiber prepared thereby
CN109563649A (en) * 2017-02-03 2019-04-02 株式会社Lg化学 The carbon nano-tube fibre for being used to prepare the method for carbon nano-tube fibre and thus preparing
CN108532287A (en) * 2018-03-30 2018-09-14 深圳烯湾科技有限公司 The surface modification method of carbon nano-tube fibre
CN109553087A (en) * 2018-12-12 2019-04-02 深圳烯湾科技有限公司 Modified carbon nano-tube array, carbon nano-tube fibre and its preparation method and application
CN111455339A (en) * 2020-05-22 2020-07-28 厦门市计量检定测试院 Preparation method of vertical carbon nanotube array for high-absorption-ratio material
CN113307252A (en) * 2021-06-18 2021-08-27 常州大学 Method for preparing spinnable super-ordered carbon nanotube array
CN113307252B (en) * 2021-06-18 2023-06-20 常州大学 Method for preparing spinnable super-parallel carbon nanotube array
CN113690457A (en) * 2021-08-23 2021-11-23 中汽创智科技有限公司 Spinning solution for fuel cell and preparation method of carbon paper of spinning solution

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