CN101855715A - Method and apparatus for deriving an iso-dense bias and controlling a fabrication process - Google Patents
Method and apparatus for deriving an iso-dense bias and controlling a fabrication process Download PDFInfo
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Abstract
Embodiments of controlling a fabrication process using an iso-dense bias are generally described herein. Other embodiments may be described and claimed.
Description
Technical field
The optical metrology of the field of the invention relate generally to more specifically, relates to and uses optical metrology to monitor from the output parameter of one or more upstream process and provide feedback to regulate the output parameter from one or more upstream process.
Background technology
The processing that periodic optical grating is generally used in the field of semiconductor manufacture monitors and control.One or more line that periodic optical grating can be connected on workpiece and be made.For example, one of periodic optical grating is used the operating structure manufacturing cycle grating that comprises near semiconductor chip usually.Periodic optical grating is then by the optical metrology tool electromagnetic radiation irradiation.The electromagnetic radiation that is departed from by periodic optical grating is collected as diffracted signal.Analyze diffracted signal then and whether make, and extend the operating structure of judging semiconductor chip and whether make according to specification according to specification with the determination cycles grating.
In a traditional system, the diffracted signal of collecting from the irradiation of periodic optical grating (measurement diffracted signal) compares with the storehouse of simulated diffraction signature.Each simulated diffraction signature in the storehouse is associated with phantom outline.When mating between the simulated diffraction signature in making measurement diffracted signal and storehouse, be estimated as the real profile of the phantom outline indication cycle grating that is associated with simulated diffraction signature.
The real profile of periodic optical grating can represent to have the series of features of tight Control Parameter or critical dimension.Critical dimension can be live width, space width or contact length.Series of features can close arrangement be arranged in the area of isolation at density area and loosely.The combination of at least one density area and at least one area of isolation is a repetitive structure.The diffracted signal of the pattern measurement from area of isolation can with diffracted signal a great difference of the feature vehicle of similar size from density area.
The diffracted signal that isolation structure from area of isolation is measured is used for judging isolation structure critical dimension (ICD).The diffracted signal that density structure is measured from density area is used for judging density structure critical dimension (DCD).Difference between isolation structure critical dimension (ICD) and the density structure critical dimension (DCD) is called isodensity deviation (Δ
IB).
Δ
IB＝ICD-DCD
The isodensity deviation is calculated by optical metrology, makes to be independent of feature on every side, and the feature of similar size can as one man be measured.Current, by at least one that makes feature in the density area measure and area of isolation in second the measuring with the difference between acquisition isolation structure critical dimension (ICD) and the density structure critical dimension (DCD) and determine the isodensity deviation of feature.The grating target that this requires continuous measurement to have at least one metrological grating target of shielding wire and have density line.Difference expression between the isodensity deviation is measured by these.Use this calculating correction values isodensity deviation to require to carry out a plurality of time-consuming measurements by optical metrology tool.
Description of drawings
Mode with example rather than restriction illustrates the present invention in the accompanying drawings, in the accompanying drawing:
Fig. 1 is to use optical metrology to measure diagram from the difraction spectrum of grating layer;
The diffraction light spectrogram measurement diffraction light spectrogram relatively of each situation in Fig. 2 A diagram and the profile library;
The profile of each situation in Fig. 2 B diagram and the profile library relatively measuring period structure structure outline;
Fig. 3 is the diagram of top view of mixing an embodiment of grating profile;
Fig. 4 is the diagram of end view of the mixing grating profile of Fig. 3;
Fig. 5 is the diagram that forms as the top view of the embodiment of the array of the embedding element of the mixing grating profile of the part of wafer;
Fig. 6 is the diagram of end view of the mixing grating profile of Fig. 5;
Fig. 7 is the diagram of mixing another embodiment of grating profile;
Fig. 8 is the diagram of end view of the mixing grating profile of Fig. 7;
Fig. 9 is the form of the measurement data of shielding wire-space profiles and density line-space profiles;
Figure 10 is the form that mixes the measurement data of grating profile;
Figure 11 is the example block diagram that is coupled to the optical metering system of making combination tool; And
Figure 12 has described to use optical metrology to monitor from one or more output parameter of one or more upstream process and provide feedback to regulate the flow chart from embodiment of the method for the output parameter of one or more upstream process.
Embodiment
Disclose in various embodiments and to have used optical metrology to monitor that one or more is from the output parameter of one or more upstream process and provide feedback to regulate the method from the output parameter of one or more upstream process.Yet those possessing an ordinary skill in the pertinent arts will recognize under the situation of neither one or a plurality of details or utilize other replacement and/or addition method, material or parts are realized each embodiment.In other cases, known structure, material or operation are not shown specifically or describe, to avoid the making each side of each embodiment of the present invention fuzzy.Similarly,, concrete numbering, material and structure have been set forth, with in order to provide to comprehensive understanding of the present invention in order to illustrate.But, can not have to implement the present invention under the situation of detail.In addition, be appreciated that each embodiment illustrated in the accompanying drawings is exemplifying expression, may not draw in proportion.
Specification in the whole text statement " embodiment " or " embodiment " meaning be with at least one embodiment of the present invention in included the embodiment special characteristic, structure, material or the characteristic that combine and describe, but do not represent that they appear among each embodiment.Thereby phrase " in one embodiment " or " in an embodiment " occur being meant the embodiment that the present invention is identical in specification each position in the whole text.In addition, special characteristic, structure, material or characteristic can combinations in any suitable manner in one or more embodiment.Various extra plays and/or structure can be comprised in other embodiments, and/or described feature can be omitted.
Various operations will be described as a plurality of discrete operations successively to help most understanding mode of the present invention.Yet it must be the order of subordinate that the order of description should not be construed these operations of hint.Particularly, these operations needn't be carried out with the order of statement.The operation described can be carried out with the order different with described embodiment.In additional embodiment, various additional operations can be carried out, and/or the operation described can be omitted.
Generally need to monitor from the output parameter of one or more processing and provide feedback to regulate one or more upstream process parameter and or equipment be provided with.The example that can be used to handle the output parameter of supervision is the isodensity deviation.The variation of isodensity deviation can be used for detecting the variation of the output that produces by upstream process or by a series of upstream process.Use an embodiment of the method for isodensity Deviation Control manufacturing processing to comprise that using manufacturing to handle forms grating layer on workpiece, workpiece with the grating layer that comprises a plurality of repetition profiles is provided to metering outfit, each repeats profile and comprises density area and area of isolation, density area comprises a plurality of features with comparative structure, area of isolation comprises isolation structure, and a plurality of features in the density area and the isolation characteristic in the area of isolation make that with pattern structure the isodensity deviation in isolation characteristic and the density feature is being in the definite scope of workpiece.Grating layer is exposed to electromagnetic energy, and measures diffracted signal from the electromagnetic energy of grating layer diffraction, thereby determines the isodensity deviation.The isodensity deviation is transferred to the manufacturing combination tool, wherein makes combination tool and be used for forming grating layer on workpiece, makes combination tool and has a plurality of processing parameters and equipment setting.At least regulating one or more parameter or the equipment of making combination tool based on the isodensity deviation is provided with.
Fig. 1 is to use optical metering system to measure diagram from the difraction spectrum of grating layer.Optical metering system 40 comprises metrology beam source 41, and it projects the workpiece that is installed on the metrology 55 or the mixing grating layer 43 of wafer 47 with light beam 43.Light beam 43 throws towards mixing grating profile 59 with incidence angle (θ).Diffracted beam 49 is measured by beam receiver 51.Diffraction beam data 57 is transferred to metering profile system 53.Metering profile system 53 will measure diffraction beam data 57 or measure diffracted signal with simulated diffraction light beam database or the simulated diffraction signature of representing to mix the various combinations of the profile parameters of grating profile 59 and resolution compare.
Select and the storehouse situation of measuring diffraction beam data 57 optimum Match.The profile of selected storehouse situation and the cross-sectional profiles nuclear critical dimension of relevant critical dimension corresponding to the feature of mixing grating profile 59.Optical metering system 40 can use reflectometer, ellipsometer or other optical metrology device to measure diffracted beam or spectrum.
Fig. 2 A illustrate with profile library in the diffraction light spectrogram measurement diffraction light spectrogram relatively of situation.Nanometer (nm) wavelength illustrates in X-axis, and cosine Δ (ellipsometer of difraction spectrum is measured) is illustrated in Y-axis.Profile library is formed with the CD of the structure in the wafer and the scope of profile library parameter.The quantity of the situation of profile library is the function of the combination of various CD and other profile parameters under specified resolution.For example, the scope that is used to mix the top CD of the density line of grating and shielding wire can be from 40 to 80nm, and specific resolution is 0.5nm.With other profile parameters combination of this structure in, one or more situation of profile library begins and forms up to 80nm with the increment of every 0.5nm at 40nm top CD.For example, the situation that is used for the profile library of trapezoidal profile can have difraction spectrum and comprise top CD, bottom CD and the profile parameters of height.In Fig. 2 A, illustrate be illustrated in given resolution next the group profile parameters the first storehouse spectrum 63 with under identical resolution, have not the second storehouse spectrum 65 of profile parameters on the same group.Measure difraction spectrum 61 closely near storehouse spectrum 63 and 65.An aspect of of the present present invention is based on the skeleton pattern of measuring difraction spectrum 61 and determining the optical digital profile metering model corresponding with measurement difraction spectrum 61 based on the given value in the profile library.
Fig. 2 B illustrate with profile library in situation profile relatively measuring period structure structure outline.The first storehouse profile, 71 figure of trapezium structure are shown with the second storehouse profile 75.Shown in dotted line, measure the profile 73 of difraction spectrum corresponding to profile parameters with closely close storehouse profile 71 and 75.As example, suppose the first storehouse profile 71 corresponding to the first storehouse spectrum 63, and suppose that the second storehouse profile 75 is corresponding to the second storehouse spectrum 65.As shown in Fig. 2 A, storehouse spectrum 63 and 65 all inaccuracy ground coupling is measured difraction spectrum 61.Like this, in legacy system, based on " optimum Match " algorithm, storehouse spectrum 63 and 65 is not chosen as the most close coupling.Yet this causes a certain amount of error.For example, suppose that the second storehouse spectrum 65 is chosen as the coupling that is used to measure difraction spectrum 61.In this case, the second storehouse profile 75 is chosen as the real profile of indication cycle's grating.
Yet,, between the real profile (that is, profile 73) of the second storehouse profile 75 and periodic optical grating, have poor/error as described in Fig. 2 B.A scheme can be the feasible storehouse spectrum that has tightr coupling measure spectrum of resolution that increases the storehouse.Yet this has increased the size in storehouse, and this has needs the more time to calculate to produce the shortcoming of storehouse, thesaurus and search library.
Fig. 3 is the diagram of formation as the top view of an embodiment of the repeated characteristic of the mixing grating profile 59 of the part of the wafer among Fig. 1 47.The first benchmark grating 300 is by big separator 310 separately and an embodiment who mixes grating profile 59 of a series of density structures adjacent with shielding wire structure 335.In this embodiment, comprise a plurality of density features of alternative line structure 345 and comprise that being combined to form of isolation characteristic of at least one shielding wire structure 335 mix grating profile 59.
In one embodiment, density structure 315 separates to form density feature by narrow space 325 and alternative line structure 345.Narrow space 325 can have and equals alternative line structure width 350 or reach the big narrow space width 330 of alternative line width 350 twices, but embodiment is not limited.In one embodiment, the scope of alternative line structure width 350 about 15 and 200nm between.In another embodiment, the scope of alternative line structure width about 50 and 100nm between.For example, the scope of alternative line structure width 350 can about 60 and 90nm between, and the scope of narrow space width can narrow approximately 90 and 120nm between.
Alternative line structure width 350 can also be approximately equal to or be narrower than shielding wire structure width 340.For example, the scope of shielding wire structure width 340 can narrow approximately 50 and 400nm between.In another embodiment, the scope of shielding wire structure width 340 can about 100 and 200nm between.In addition, the distance between shielding wire structure 335 and the alternative line structure 345 should surpass the natural length of optics steeper or scanner, and this natural length is limited by illumination wavelength, numerical aperture and intrinsic parameter (j).
As shown in Figure 3, comparative structure can be surrounded by a plurality of density structures 315.Yet the order in density structure 315, alternative line structure 345 and narrow space 325 can be different with embodiment shown in Figure 3 with shape.The critical dimension of feature can be the form of structure, can be the form in the space between the structure, perhaps can be some combinations of its feature.As example, each can be critical dimension for alternative line structure width 350, shielding wire structure width 340, narrow space width 330 and density structure width 320.
In one embodiment, for fear of optical adjacent influence, the density feature skew 370 of measuring and isolation characteristic skew 375 each intrinsic diameter of measuring to adjacent structure shown in Figure 3 360 from the mid point of shielding wire structure 335 greater than the etching system that is used for limiting a plurality of structures that comprise alternative line structure 345 and density structure 315 from the mid point of alternative line structure 345 to the remote edge of density structure 315.In one embodiment, the scope of determining for workpiece can be meant the density feature skew 370 of measuring from the mid point of alternative line structure 345 to the remote edge of density structure 315 and from shielding wire structure 335 to adjacent structure shown in Figure 3 the 360 isolation characteristic deviations of measuring 375 respectively equal to be used for limiting a plurality of structures that comprise alternative line structure 345 and density structure 315 etching system intrinsic diameter or than the big twice of this intrinsic diameter.In another embodiment, density feature skew 370 and isolation characteristic skew 375 respectively equals to be used for limiting the intrinsic diameter of etching system of a plurality of structures that comprise alternative line structure 345 and density structure 315 or bigger 5 times than intrinsic diameter.
Intrinsic diameter (d
Wafer) be defined as the wafer side numerical aperture (NA of the wavelength (λ) of irradiation source according to the basic principle of optical patterning divided by intrinsic parameter (σ) and scanning lens
Wafer), be expressed as follows:
Wherein, intrinsic parameter (σ) is the numerical aperture NA of irradiation source
IlluMask side numerical aperture (NA with scanning lens
Mask) ratio, be expressed as follows:
As previously mentioned, should execution graph 3 to the design of mixing grating profile 59 shown in Figure 8 to avoid the optical adjacent influence.
Determine the mask design of mixing grating profile 59 by printed state and other treatment situations.For example, the positive photoetching rubber processing can require positive mask, and negative photoresist processing can be wanted the negate mask.For the mask pattern with Fig. 4 is printed onto on the wafer, negative photoresist processing can require tone reversal.In another embodiment, print the pattern opposite with Fig. 4, that is, line becomes the space, and vice versa.In the case, mask must be correspondingly opposite.The characteristic size that comprises any critical dimension on the mask limits by the target signature size on the wafer with by reduction ratio (for example photoetching is 4: 1 for DUV).Resolution enhance technology such as phase-shift mask (PSM), optical near-correction (OPC) feature and double patterning photoetching (DPL) can be applied to the design of hybrid mask to guarantee the correction printing of critical characteristic.
Fig. 4 is the diagram of end view of the mixing grating profile 59 of Fig. 3.The first benchmark grating 300 can comprise shielding wire structure 335, alternative line structure 345, density structure 315 and base layer 460 on substrate 470.Substrate 470 can comprise silicon, stress silicon, GaAs, gallium nitride, germanium silicon, carborundum, carbide, diamond and/or such as the other materials of buried insulating layer.Base layer 460 can be that doping or unadulterated epitaxial loayer, bottom anti-reflective coating layer, photoresist layer or use one of ordinary skill in the art known method are formed on the hard mask layer that comprises silica, silicon nitride or nitrogenize oxygen silicon on the substrate 470.Base layer 460 can comprise monomer material, perhaps base layer 460 can be a plurality of layerings, the film of patterning or patterning not.A plurality of density structures 315, at least one alternative line structure 345 and at least one shielding wire structure 335 can use one of ordinary skill in the art known method to be formed on the base layer 460 by one or more photoresist, antireflecting coating, silicon nitride or silicon oxide layer, perhaps alternatively, be formed on the substrate 470.
Each can be characterized by critical dimension for each structure width and height (for example, isolation structure height 410 comprises density structure 315. shielding wire structures 335, alternative line structure 345 and separator 310 and narrow space 325).The position of the critical dimension of structure can be near the bottom position 420 of base layer 460, away from the tip position 440 of base layer 460 or the position intermediate slightly 430 between bottom position 420 and the tip position 440.The Sidewall angles 450 of each structure can also be a critical dimension.The isodensity deviation is derived as the critical dimension of definite shielding wire structure 335 and the critical dimension of the alternative line structure 345 determined poor.Determine that critical dimension is to use recurrence, storehouse and/or machine learning system and measurement diffracted signal or difraction spectrum to determine the result who handles.In one embodiment, from two-dimentional stereogram, the isodensity deviation is poor between the shielding wire structure width 340 measured at the tip position place and the alternative line structure width 350 measured at tip position 440 places.In another embodiment, the isodensity deviation is poor between the alternative line structure width 350 at the shielding wire structure width 340 at 430 places, centre position and place, centre position 430 in the mode of three-dimensional, but present embodiment is not limited thereto.
Fig. 5 is the diagram of top view of embodiment of array of embedding element of mixing grating profile 59 that forms the part of the wafer 47 among Fig. 1.The second benchmark grating 500 is another embodiment that mix grating profile 59 that comprise a series of density element adjacent with isolated component 535 and that separated by big member 510.In this embodiment, density element 515 is separated to form density feature by narrow member 525 and comparing element 545.Narrow member 525 can have and is approximately the big narrow member width 530 of comparative structure width 50 twices, and not narrow member 525 can be less than comparing element width 550.Density member width 520 can be approximately equal to or greater than comparing element width 550.Comparing element width 550 can be approximately equal to isolated component width 540.Comparing element width 550 and isolated component width 540 can be critical dimension.In another embodiment, comparing element width 550 is than in the isolated component width 540 little or big 20%.Comparing element width 550 can also be a critical dimension.As shown in Figure 3, comparative structure can be surrounded by a plurality of density element 515.Yet the order of density element 515, comparing element 545 and narrow member 525 can be different with embodiment shown in Figure 3 with shape.
In optional embodiment, isolated component can be circular isolated component 560, and comparing element can be circular comparing element 565.Yet the shape of isolated component and comparing element can be another geometry or its distortion slightly.
Fig. 6 is the diagram of end view of the mixing grating profile of Fig. 5.The first benchmark grating 500 can comprise isolated component 535, comparing element 545, density element 515 and base layer 460 on substrate 470.Substrate 470 can comprise silicon, stress silicon, GaAs, gallium nitride, germanium silicon, carborundum, carbide, diamond and/or such as the other materials of buried insulating layer.Base layer 460 can be that doping or unadulterated epitaxial loayer, bottom anti-reflective coating layer, photoresist layer or use one of ordinary skill in the art known method are formed on the hard mask layer that comprises silica, silicon nitride or nitrogenize oxygen silicon on the substrate 470.A plurality of density structures 515, at least one alternative line structure 545 and at least one shielding wire structure 535 can use one of ordinary skill in the art known method to be formed on the base layer 460 by one or more photoresist, antireflecting coating, silicon nitride or silicon oxide layer, perhaps alternatively, be formed on the substrate 470.
Each can be characterized by critical dimension for each element width and the degree of depth (comprising density element 515, isolated component 535, comparing element 545 and big member 510 and narrow member 525).The position of the critical dimension of structure can be near the bottom position 620 of base layer 460, away from the tip position 640 of base layer 460 or the position intermediate slightly 630 between bottom position 420 and the tip position 440.The Sidewall angles of each structure can also be a critical dimension.The isodensity drift gage is calculated poor into the critical dimension of the critical dimension of the isolated component of determining 535 and the comparing element 545 determined.In one embodiment, the isodensity deviation is poor between the isolated component width 540 measured at tip position 640 places and the comparing element width 550 measured at tip position 640 places in the mode of two dimension.In another embodiment, the isodensity deviation is poor between the comparing element width 650 at the isolated component width 540 at 630 places, centre position and place, centre position 630 in the mode of three-dimensional, but present embodiment is not limited thereto.
Fig. 7 is the diagram as another embodiment of the mixing grating profile 59 of the part of the wafer among Fig. 1 47.The 3rd benchmark grating 700 is embodiment that comprise the mixing grating profile 59 of a plurality of isolated vias 720 of locating near a plurality of density via holes 760.In this embodiment, being combined to form of at least one density via hole 760 and at least one isolated vias 720 mixed grating profile 59.
In this embodiment, each isolated vias 720 is square in the present embodiment, and has identical size and dimension approx.In another embodiment, the size of one or more isolated vias 720 and/or shape can be unique.In addition, in this embodiment, each isolated vias 720 that is formed in the isolated vias zone 730 extends through isolated vias zone 730 to base layer 460.Yet isolated vias 720 can partly form, and makes that the bottom of isolated vias is in place along the degree of depth in isolated vias zone 730.Base layer 460 and/or isolated vias zone 730 can be that doping or unadulterated epitaxial loayer, bottom anti-reflective coating layer, photoresist layer or use one of ordinary skill in the art known method are formed on the hard mask layer that comprises silica, silicon nitride or nitrogenize oxygen silicon on the substrate 470.
A plurality of density via holes 760 be formed on mixing grating profile 59 identical on the base layer 460 near.In this embodiment, density via hole 760 is formed in the adjacent density via area 750 in the peripheral region of base layer 460 of exposure.In this embodiment, each density via hole 760 is square in the present embodiment, and is approximately same size and shape.In another embodiment, the size of one or more density via hole 760 and/or shape can be unique.For example, each density via hole 760 can be circle, rhombus, ellipse, hexagon or rectangle, but present embodiment is not limited thereto.
Fig. 8 is the diagram as another embodiment of the mixing grating profile of the part of the wafer among Fig. 1 47.The 4th benchmark grating 800 is another embodiment that comprise the mixing grating profile 59 of a plurality of isolated vias 720 of locating near a plurality of density via holes 760.In this embodiment, a plurality of density via holes 760 and a plurality of isolated vias 720 with the chequer design structure forms mixing grating profile 59.Yet under the situation of a series of density via holes 760 and the adjacent structure of a plurality of isolated vias, a plurality of density via holes 760 and a plurality of isolated vias 720 can be orientated alternatively with other patterns.
Fig. 9 is the form of the lithography simulation data of shielding wire-space profiles and density line-space profiles.Isolate critical dimension (ICD) to draw isodensity deviation (Δ by measuring to measure dividually with density critical dimension (DCD)
IB) (Δ wherein
IB=ICD-DCD) the measurement data among editor Fig. 9.Carry out two according to art methods and measure processing.Each Δ among Fig. 9
IBValue is two independent measurements results of (being used for second measurement that first of ICD measured and be used for DCD).In the form of Fig. 9, the dosage of the electromagnetic energy of measuring in every square centimeter millijoule (mJ/cm^2) is used in 20 to 25mJ/cm^2 scope with the increment of 1.25mJ/cm^2, and the increment of intrinsic parameter (j, the optical parametric of the ratio of expression numeric aperture values) with 0.045 that is used for annular irradiation plan changes to 0.78 to form measurement data and the Δ that obtains from 0.6
IBMatrix.In the present embodiment, the depth of focus of optics sosimetric system 40 is set at zero, this means that focal plane is based upon 440 places, top of shielding wire structure 335 and the alternative line structure of Fig. 3.
Design good mask cause isolate and true isodensity deviation (referring to Fig. 9) that density grating pattern place is measured respectively and the isodensity deviation (referring to Figure 10) that is printed with hybrid mask between good relationship.
As example,, can be desirably in and set up minimum isodensity deviation between ICD and the DCD for the lithography simulation data among Fig. 9.In the case, minimum isodensity deviation can be to be the dosage of the 21.25mJ/cm^2 under 0.735 at j.
Figure 10 is the form such as the lithography simulation data of the line of the first benchmark grating 300 of Fig. 3-space mixing grating profile 59.In the case, by single measurement mixing grating profile 59 to obtain isodensity deviation (Δ
IB) (Δ wherein
IB=ICD-DCD) come measurement data among editor Figure 10.Each Δ among Fig. 9
IBValue is to obtain being used for the result that first of ICD measured and be used for the second single measurement of measuring of DCD.In the form of Figure 10, the dosage of measuring in every square centimeter millijoule (mJ/cm^2) is used in 20 to 25mJ/cm^2 scope with the increment of 1.25mJ/cm^2, and the increment of intrinsic parameter (j) with 0.045 changes to 0.78 to form measurement data and the Δ that obtains from 0.6
IBMatrix.In the present embodiment, the depth of focus of optics sosimetric system 40 is set at zero, this means that focal plane is based upon 440 places, top of shielding wire structure 335 and the alternative line structure of Fig. 3.
As example,, can be desirably in and set up minimum isodensity deviation between ICD and the DCD for the analogue data among Figure 10.In the case, minimum isodensity deviation can be to be the dosage of the 21.25mJ/cm^2 under 0.735 at j.Alternatively, expectation for example is used for the desired value of isodensity deviation by foundation, monitors then with the deviation of the desired value of measuring by optics sosimetric system 40 of mixing grating profile 59 subsequently to monitor the isodensity deviation.The wafer 47 with mixing grating profile 59 subsequently can be labeled as not conformal, wherein mixes the deviation that the grating profile has and is equal to, or greater than the desired value of foundation value.As a result, can use the single measurement of a plurality of critical dimensions of having considered the grating profile to monitor processing.
Figure 11 is connected to the example block diagram that is configured to provide the optical metering system 40 of making the manufacturing combination tool of handling 702.In an example embodiment, optical metering system 40 can comprise the storehouse 710 with a plurality of analog differential diffracted signals and a plurality of profile parameters relevant with a plurality of analog differential diffracted signals.Metering processor 708 can calculate the analog approximation diffracted signal, and can compare and measure a plurality of analog differential diffracted signals in diffracted signal and the storehouse, measure wherein that diffracted signal is comfortable to be made the structure made in the combination tool 702 and be conditioned by deducting the analog approximation diffracted signal.Make combination tool 702 and be configured to carry out manufacturing processing one or more element with manufacturing structure on wafer.In one embodiment, making processing is that photoetching exposes processing.In another embodiment, making processing is that photoetching development is handled.Make other examples of handling and comprise the processing that is used for making semiconductor device, such as dry ecthing, cmp, wet etching, chemical vapour deposition (CVD), injection, ald and coating processing, but present embodiment is not limited thereto.
When obtaining mating the analog differential diffracted signal, the profile parameters relevant with coupling analog differential diffracted signal in the storehouse presents the profile parameters corresponding to the practical structures of being measured by optical light beam receiver 51.Provide wireless communication link 704 to communicate by letter with manufacturing combination tool 702 to allow optical metering system 40.
Alternatively, perhaps combine with wireless communication link, wireless communication link 706 can be provided, it allows optical metering system 40 to communicate by letter with manufacturing combination tool 702.Optical metering system 40 can be transferred to numerical data and make combination tool 702 via wireless communication link 706.Wireless communication link 706 can be the physical medium such as AC power line, telephone wire or other electric wires, cable, copper cash etc.In one embodiment, wireless communication link 706 can meet concrete communication standard, and all if can use comprises ATM(Asynchronous Transfer Mode), IEEE 802.3 or 802.1 or limit one in many communication protocols of set of standard of the physical layer of data link layer of wireless ethernet and medium access control sublayer and communicate.
Figure 12 is one or more output parameter that description uses optical metering system 40 to monitor from the manufacturing combination tool to use mixing grating profile 59 shown in Figure 10 as Fig. 1, and provides feedback with the flow chart of adjusting from an embodiment of the method for the output parameter of making combination tool 702.Can on workpiece 47, form the grating layer that comprises a plurality of repetition profiles or mix grating profile 59 by use manufacturing combination tool 702 and begin to handle, each repeats profile and comprises density area and area of isolation, density area comprises a plurality of features with alternative line structure 345, and area of isolation comprises shielding wire structure 335 (step 810).In addition, each repetition profile is constructed in the mode of pattern and is made that the isodensity deviation is being in the definite scope of workpiece.The scope that is used for the isodensity deviation can partly be set up by design mixing grating profile 59 (for example, by set up alternative line structure width 350 and shielding wire structure width 340 and/or one or more measurement parameter (such as the degree of depth or the intrinsic parameter in dosage, zone) by revising optical metering system 40 according to desired value).Making combination tool 702 can be single handling implement or a plurality of handling implement.For example, making combination tool 702 can be the known single entry dry ecthing of the those skilled in the art system of technical field of manufacturing semiconductors.Alternatively, making combination tool 702 can be a plurality of handling implements, such as with the photoetching scanner of photoetching coater/developer combination.
Workpiece 47 with grating layer is arranged in the optical metering system 40 in step 820, and the grating layer on the workpiece 47 is exposed to electromagnetic energy in step 830.Electromagnetic energy can be provided by the spectral sources that adopts in the optical metering system 40 of scatterometer type usually.An example of optical metering system 40 is based on the optical measurement and the characterization system of ellipsometer.In another embodiment, optical metering system 40 is optical metrology devices of reflectometer or other measurement diffracted beams or spectrum.In one embodiment, light beam 43 can mix grating profile 59 with the spot size bump of approximate measure between 25 and 45 microns.The shape of spot can be circular, oval, square or rectangle, but present embodiment is not limited thereto.
In step 840 from measured diffracted signal and definite isodensity deviation by the electromagnetic energy of grating layer diffraction.In step 850, use wireless communication link 704 and/or wireless communication link 706 that the isodensity deviation and the second isodensity deviation are transferred to the manufacturing combination tool.At least be provided with based on one or more processing parameter of isodensity bias adjustment and/or equipment in step 860.
A plurality of embodiment of the method for using isodensity Deviation Control manufacturing processing have been described.In order to illustrate the aforementioned description that has presented embodiments of the invention with purpose of description.Do not want the present invention is restricted to disclosed accurate form specially.This describe and claim comprise only be used to describe purpose and be not understood to limit such as left and right, top, bottom, top, below, upper and lower, first, second etc. electric term.For example, the relative vertical position of term is meant that the device-side (perhaps active surface) of workpiece 47 or integrated circuit is " top " surface of this workpiece 47; Workpiece 47 can be in practically makes at the ground framework with standard to be that " top " face of workpiece under the situation of benchmark can be lower than " end " face in any orientation, and still drops in the meaning at term " top ".The employed term that (comprises claim) herein " on " be not meant the second layer " on " ground floor directly on the second layer and with the second layer, directly contact, unless this is made concrete elaboration; The 3rd layer or other structure can be arranged between the second layer on ground floor and the ground floor.The embodiment of device described herein or object can make in many positions and orientation, uses or transport.
The those skilled in the art of correlative technology field can understand according to above instruction can carry out many modifications and distortion.One of ordinary skill in the art will be recognized can have various be equal to combination and replacements to various parts shown in the drawings.Thereby scope of the present invention is not to be intended to detailed thus description restriction but to be limited by claim.
Claims (22)
1. method that obtains the isodensity deviation of workpiece, described workpiece has the grating layer that has the repetition profile, and described method comprises:
Described workpiece setting has the grating layer that comprises a plurality of repetition profiles, each repeats profile and comprises density area and area of isolation, described density area comprises a plurality of features with comparative structure, described area of isolation comprises isolation structure, and a plurality of features in the described density area and the isolation characteristic in the described area of isolation are constructed the isodensity deviation that makes between described isolation characteristic and the described density feature in the mode of pattern be in the definite scope of described workpiece;
Described grating layer is exposed to electromagnetic energy dosage;
Measurement is from by the diffracted signal of the electromagnetic energy dosage of described grating layer diffraction;
Use measured diffracted signal to obtain described isodensity deviation.
2. method according to claim 1, wherein, described density feature and described isolation characteristic are formed in the layer of described workpiece.
3. method according to claim 1, wherein, described isolation characteristic and described density feature are recessed in described workpiece.
4. method according to claim 1 wherein, obtains described isodensity deviation and comprises:
Produce the optical digital profile rating model of described repetition profile, described optical digital profile rating model comprises the skeleton pattern of described repetition profile;
Use measured diffracted signal to optimize described optical digital profile rating model; And
Determine the critical dimension of described density feature and described isolation characteristic.
5. method according to claim 4 also comprises:
Use the critical dimension of described density feature and described isolation characteristic to obtain described isodensity deviation; And
Described isodensity deviation and isodensity deviation range are compared.
6. method according to claim 5, wherein:
If described isodensity deviation is then revised described isodensity outside described isodensity deviation range
The structure of the pattern of the described isodensity deviation between structure and the described comparative structure, and repeat described light
Learn the determining of critical dimension of the optimization of the generation of digital profile rating model, described optical digital profile rating model and described isolation structure and described comparative structure.
7. method according to claim 1 wherein, obtains described isodensity deviation and comprises:
Produce the optical digital profile rating model of described repetition profile, described optical digital profile rating model comprises the skeleton pattern of described repetition profile, and described skeleton pattern comprises the isodensity deviation as profile parameters;
Use measured diffracted signal to optimize described optical digital profile rating model; And
Use optical digital profile rating model and the measured diffracted signal optimized to determine at least one profile parameters.
8. method according to claim 7 also comprises described isodensity deviation and isodensity deviation range are compared.
9. one kind is used to use the optical digital profilometry to obtain the equipment of isodensity deviation, comprising:
Substrate;
Mixing grating profile on described substrate, wherein, described mixing grating profile comprises a plurality of repetitive structures, each repetitive structure comprises density area and area of isolation, described density area comprises a plurality of features that comprise density feature, described area of isolation comprises isolation characteristic, and a plurality of features in the described density area and the isolation characteristic in the described area of isolation are constructed the isodensity deviation that makes between described isolation characteristic and the described density feature in the mode of pattern be in the definite scope of described mixing grating profile.
10. equipment according to claim 9 also comprises:
Metering outfit, it is configured to described mixing grating profile is exposed to electromagnetic energy dosage, and measures from by the diffracted signal of the electromagnetic energy dosage of described mixing grating profile diffraction.
11. equipment according to claim 10, wherein, described metering outfit is spectroreflectometer or spectrum ellipsometer.
12. equipment according to claim 10 also comprises:
Processor, it is configured to produce the optical digital profile rating model of described repetitive structure, and described optical digital profile rating model comprises the skeleton pattern of described repetitive structure; The diffracted signal that use is measured by described metering outfit is optimized described optical digital profile rating model; And the critical dimension of definite described density feature and described isolation characteristic.
13. equipment according to claim 12, wherein, described processor also is configured to:
Use the critical dimension of described density feature and described isolation characteristic to calculate described isodensity deviation; And the isodensity deviation calculated and the isodensity deviation range of setting compared.
14. a method of using the manufacturing of isodensity Deviation Control to handle, described method comprises:
Limit grating layer, described grating layer comprises density area with a plurality of density features and the area of isolation with at least one isolation characteristic;
Use the manufacturing combination tool on first substrate, to form described grating layer;
Described grating layer on described first substrate is provided to metering outfit;
Described grating layer is exposed to electromagnetic energy;
First diffracted signal of the electromagnetic energy of the next free described grating layer diffraction of measurement is also set up the first isodensity deviation;
Use described manufacturing combination tool on second substrate, to form described grating layer;
Described grating layer is exposed to electromagnetic energy;
Measure second diffracted signal of the described electromagnetic energy of free described grating layer diffraction, and set up the second isodensity deviation;
Described first isodensity deviation and the described second isodensity deviation are transferred to described manufacturing combination tool, wherein, described manufacturing combination tool is used for forming described grating layer on described first substrate and described second substrate, described manufacturing combination tool has processing parameter and equipment is provided with; And
At least regulate one or more processing parameter or the equipment setting of described manufacturing combination tool based on the difference between described first isodensity deviation and the described second isodensity deviation.
15. method according to claim 14, wherein, described density feature and described isolation characteristic be formed on the substrate the layer in.
16. method according to claim 14, wherein, described density feature and described isolation characteristic are formed by the layer on the substrate.
17. method according to claim 14, wherein, the spot size that is used for electromagnetic energy is less than 55 microns.
18. method according to claim 14, wherein, described metering outfit is reflectometer or ellipsometer.
19. method according to claim 14, wherein, described electromagnetic energy is launched from monochromatic source.
20. method according to claim 14, wherein, described electromagnetic energy is launched from spectral sources.
21. method according to claim 14, wherein, described metering outfit is combined in the described manufacturing combination tool.
22. method according to claim 14, wherein, described manufacturing combination tool comprises photolithographic exposure tool and coater/developer system.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/936,747 | 2007-11-07 | ||
| US11/936,759 US7639370B2 (en) | 2007-11-07 | 2007-11-07 | Apparatus for deriving an iso-dense bias |
| US11/936,747 US20090116040A1 (en) | 2007-11-07 | 2007-11-07 | Method of Deriving an Iso-Dense Bias Using a Hybrid Grating Layer |
| US11/936,759 | 2007-11-07 | ||
| US11/936,769 | 2007-11-07 | ||
| US11/936,769 US7598099B2 (en) | 2007-11-07 | 2007-11-07 | Method of controlling a fabrication process using an iso-dense bias |
| PCT/IB2008/003804 WO2009060319A2 (en) | 2007-11-07 | 2008-10-30 | Method and apparatus for deriving an iso-dense bias and controlling a fabrication process |
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| CN101855715A true CN101855715A (en) | 2010-10-06 |
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| KR (1) | KR101483325B1 (en) |
| CN (1) | CN101855715A (en) |
| WO (1) | WO2009060319A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105004286A (en) * | 2015-05-19 | 2015-10-28 | 哈尔滨工业大学 | Ultraprecise turning processing surface three-dimensional microscopic morphology measurement method based on laser beam diffraction spot characteristic |
| CN107741207A (en) * | 2013-12-23 | 2018-02-27 | 科磊股份有限公司 | The measurement of multiple patterning parameter |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102550690B1 (en) | 2018-05-28 | 2023-07-04 | 삼성디스플레이 주식회사 | Ellipsometer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020131055A1 (en) * | 2001-01-29 | 2002-09-19 | Xinhui Niu | Method and apparatus for the determination of mask rules using scatterometry |
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|---|---|---|---|---|
| US6063531A (en) * | 1998-10-06 | 2000-05-16 | Advanced Micro Devices, Inc. | Focus monitor structure and method for lithography process |
| WO2001055669A1 (en) * | 2000-01-26 | 2001-08-02 | Timbre Technologies, Incorporated | Caching of intra-layer calculations for rapid rigorous coupled-wave analyses |
| US6943900B2 (en) * | 2000-09-15 | 2005-09-13 | Timbre Technologies, Inc. | Generation of a library of periodic grating diffraction signals |
| US6785638B2 (en) * | 2001-08-06 | 2004-08-31 | Timbre Technologies, Inc. | Method and system of dynamic learning through a regression-based library generation process |
| US6800403B2 (en) * | 2002-06-18 | 2004-10-05 | Koninklijke Philips Electronics N.V. | Techniques to characterize iso-dense effects for microdevice manufacture |
| US7209798B2 (en) * | 2004-09-20 | 2007-04-24 | Tokyo Electron Limited | Iso/nested cascading trim control with model feedback updates |
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2008
- 2008-10-30 KR KR1020107011378A patent/KR101483325B1/en not_active IP Right Cessation
- 2008-10-30 CN CN200880115157A patent/CN101855715A/en active Pending
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020131055A1 (en) * | 2001-01-29 | 2002-09-19 | Xinhui Niu | Method and apparatus for the determination of mask rules using scatterometry |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107741207A (en) * | 2013-12-23 | 2018-02-27 | 科磊股份有限公司 | The measurement of multiple patterning parameter |
| CN107741207B (en) * | 2013-12-23 | 2020-08-07 | 科磊股份有限公司 | Measurement of multiple patterning parameters |
| CN105004286A (en) * | 2015-05-19 | 2015-10-28 | 哈尔滨工业大学 | Ultraprecise turning processing surface three-dimensional microscopic morphology measurement method based on laser beam diffraction spot characteristic |
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| WO2009060319A3 (en) | 2009-09-24 |
| WO2009060319A2 (en) | 2009-05-14 |
| KR20100091987A (en) | 2010-08-19 |
| KR101483325B1 (en) | 2015-01-15 |
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