CN101851114B - Semiconductor material prepared by compositing In2O3 tentaculiform nano-structure on silicon chip and preparation method thereof - Google Patents
Semiconductor material prepared by compositing In2O3 tentaculiform nano-structure on silicon chip and preparation method thereof Download PDFInfo
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- CN101851114B CN101851114B CN201010174386XA CN201010174386A CN101851114B CN 101851114 B CN101851114 B CN 101851114B CN 201010174386X A CN201010174386X A CN 201010174386XA CN 201010174386 A CN201010174386 A CN 201010174386A CN 101851114 B CN101851114 B CN 101851114B
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- quartz boat
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Abstract
The invention discloses a semiconductor material prepared by compositing an In2O3 tentaculiform nano-structure on a silicon chip and a preparation method thereof. The material comprises a substrate, wherein the substrate adopts the silicon chip; an In2O3 crystal are grown on the surface of the substrate, is the tentaculiform nano-structure formed by connecting polyhedral nano-structures, and has the length of 48 to 68 microns; and the sizes of the polyhedron are gradually enlarged from the top end of the bottom end of the tentaculiform nano-structure. In the preparation method, In2O3 powder and C powder are taken as raw materials and are grown by utilizing a thermal evaporation method to obtain the In2O3 tentaculiform nano-structure. The surface of the tentaculiform nano-structure of the invention is provided with a plurality of edge angles as emitting points; the tentaculiform nano-structure can serve as an excellent field emission anode material; and the preparation method has the advantages of low cost, high repeatability and the like, can be combined with a current mature semiconductor silicon integration circuit process and is applied to the preparation of integrated nano-photoelectronic devices.
Description
Technical field
The present invention relates to photoelectron material, semiconductor material and device technology field, specifically a kind of on silicon chip compound In
2O
3Semiconductor material of tentaculiform nanostructure and preparation method thereof.
Background technology
In
2O
3Be a kind of broad-band gap transparent semiconductor material, its direct band gap has good electrical conductivity and higher transmittance in 3.55～3.75eV scope.Since its unique electricity, chemistry and optical property, In
2O
3Has application space widely in fields such as chemistry, bio-sensing, solar cell, photochemical catalysis, performer, photoelectron and FPD.
Recently, people utilize the whole bag of tricks (solution method, molecular beam epitaxy, pulsed laser deposition, metal-organic chemical vapor deposition equipment etc.) to prepare various In
2O
3Nanostructure, for example nano wire, nano belt, nanometer square, octahedron and nanometer arrow etc., and the photoelectric characteristic of these nanostructures studied.The result shows; Have those most advanced and sophisticated nanostructures and launch electronics more easily; Yet in the disclosed prior art, all nanostructures are because the further raising of field emission performance often all can only have been limited from top emission electronic in its slick surface extremely so far.Therefore, be necessary to make and a kind ofly not only have the tip, and also have the structure of a lot of launching site to be used as the filed emission cathode material of a new generation from the teeth outwards.
Summary of the invention
One of the object of the invention be to provide a kind of on silicon chip compound In
2O
3The semiconductor material of tentaculiform nanostructure, the In of this material
2O
3Nanostructure not only has nano level tip, and a large amount of nanostructure that on trunk, also distributing can be used as launching site, thereby overcomes the deficiency during the emission on the scene of many nanostructures is used in the prior art.
Second purpose of the present invention is to be provided at compound In on the silicon chip
2O
3The preparation method of the semiconductor material of tentaculiform nanostructure is to solve existing In
2O
3The preparation method of nano material condition is harsh, and the problem that cost is high provides a kind of low cost, the novel method of high duplication.
The objective of the invention is to realize like this:
A kind of on silicon chip compound In
2O
3The semiconductor material of tentaculiform nanostructure, characteristics are: this material comprises silicon chip substrate and is grown in the In of this substrate surface
2O
3Crystal; Said In
2O
3The tentaculiform nanostructure that crystal is connected to form for the polyhedron nanostructure, its length are 48～68 μ m, and polyhedral size becomes big gradually by tentaculiform structure top to the bottom.
The preparation method of above-mentioned semiconductor material comprises the steps:
A, with In
2O
3Powder and C powder are put in the quartz boat as the source with 1: 3 molar ratio mixing, and the silicon chip after cleaning is covered on quartz boat, and the vertical range in silicon chip and source is 4～10mm;
B, quartz boat placed be heated to 700～1000 ℃, the middle part of the tubular type reactors of horizontal positioned in advance;
Feed rare gas element Ar in c, the tubular type reactors as carrier gas, reaction 120～360min under atmospheric pressure;
D, taking-up quartz boat and silicon chip obtain compound In on silicon chip
2O
3The semiconductor material of bar-shaped nanostructure;
Wherein: In described in the step a
2O
3The purity of powder is analytical pure; The purity of said C powder is spectroscopically pure; The flow of the rare gas element Ar that feeds described in the step c is 0.2～0.8L/min.
The tubular type reactors of said horizontal positioned is made up of two pipes, and wherein a pipe range is 70～100cm, and diameter is 6～10cm; Another root pipe range is 50～80cm, and diameter is 3～5cm; During reaction, small-bore pipe inserts in the large-diameter pipe, and carrier gas is directly to be passed in the small-bore pipe.
The present invention passes through to change to some parameters in the thermal evaporation process, like gas flow, and temperature of reaction, In has been synthesized in the control of distance between silicon chip and the source
2O
3The tentaculiform nanostructure.With respect to former synthetic nanostructure, outstanding feature of the present invention is: (1) institute silicon chip substrate position of putting is different.Many compound methods all are placed on the dirty of air-flow to silicon substrate, with the source at same level attitude, the present invention then is placed directly in a certain position on the vertical direction with the source to silicon chip; (2) pressure need be normal pressure only, has reduced the requirement to equipment; (3) less demanding to carrier gas only needs Ar just passable, need not add O
2Etc. other gas; (4) method is simple, and cost is low, good reproducibility.And the present invention adopts silicon chip as substrate, with In
2O
3The tentaculiform nanostructure growth is on silicon substrate; Described tentaculiform nanostructure has the corner angle that can be used as launching site in a large number on the surface, can be used as good filed emission cathode material; Its distinctive nano level is most advanced and sophisticated; Can be used for making the probe of various precision instruments, and can combine present sophisticated semiconductor silicon integrated circuit technology, be suitable for the preparation of integrated nanometer opto-electronic device.
Description of drawings
Fig. 1 is the X-ray diffractogram of the embodiment of the invention 1, shows among the figure that all peaks all are In
2O
3The peak, have no impurity peaks to exist.
Fig. 2 is the SEM figure of the embodiment of the invention 1 lot of materials, shows In among the figure
2O
3Crystal length is 48～68 μ m, and polyhedral size becomes big gradually by tentaculiform structure top to the bottom.
Fig. 3 is the SEM figure of the embodiment of the invention 1 magnification, shows In among the figure
2O
3The tentaculiform nanostructure that crystal is connected to form for the polyhedron nanostructure.
Embodiment
Embodiment 1
A, clean up silicon chip, be cut into 1.8cm * 1.8cm small pieces then;
B, the tubular type reactors of horizontal positioned is heated to 900 ℃ with the speed of 5 ℃/min;
C, with 1.5g In
2O
3Powder and the mixing of 4.5g C powder are put in the quartz boat as the source, cover the clean silicon chip of small pieces on quartz boat, collect resultant of reaction as substrate, and the vertical range in silicon chip and source is 6mm;
D, be put into quartz boat at the middle part of the horizontal pipe furnace that heats in advance;
E, feed flow be the rare gas element Ar of 0.8L/min as carrier gas, under atmospheric pressure, react 300min;
F, taking-up quartz boat and silicon chip, face length has the flaxen material of one deck on silicon chip, promptly makes material requested.
Detect prepared material, detected result is like Fig. 1,2, shown in 3.Fig. 1 shows that all peaks all are In
2O
3The peak, have no impurity peaks to exist.Fig. 2 shows In
2O
3Crystal length is 48～68 μ m, and polyhedral size becomes big gradually by tentaculiform structure top to the bottom.Fig. 3 shows In
2O
3The tentaculiform nanostructure that crystal is connected to form for the polyhedron nanostructure.
A, clean up silicon chip, be cut into 2cm * 2cm small pieces then;
B, the tubular type reactors of horizontal positioned is heated to 950 ℃ with the speed of 5 ℃/min;
C, with 1g In
2O
3Powder and the mixing of 3g C powder are put in the quartz boat as the source, cover the clean silicon chip of small pieces on quartz boat, collect resultant of reaction as substrate, and the vertical range in silicon chip and source is 8mm;
D, be put into quartz boat at the middle part of the horizontal pipe furnace that heats in advance;
E, feed flow be the rare gas element Ar of 0.6L/min as carrier gas, under atmospheric pressure, react 260min;
F, taking-up quartz boat and silicon chip, face length has the flaxen material of one deck on silicon chip, promptly makes material requested.
Claims (3)
1. compound In on silicon chip
2O
3The semiconductor material of tentaculiform nanostructure is characterized in that: this material comprises silicon chip substrate and is grown in the In of this substrate surface
2O
3Crystal; Said In
2O
3The tentaculiform nanostructure that crystal is connected to form for the polyhedron nanostructure, its length are 48～68 μ m, and polyhedral size is become to the bottom greatly by tentaculiform structure top gradually, and its this material prepares according to the following steps:
A, with In
2O
3Powder and C powder are put in the quartz boat as the source with 1: 3 molar ratio mixing, and the silicon chip after cleaning is covered on quartz boat, and the vertical range in silicon chip and source is 4～10mm;
B, quartz boat placed be heated to 700～1000 ℃, the middle part of the tubular type reactors of horizontal positioned in advance;
Feed rare gas element Ar in c, the tubular type reactors as carrier gas, reaction 120～360min under atmospheric pressure;
D, taking-up quartz boat and silicon chip obtain compound In on silicon chip
2O
3The semiconductor material of tentaculiform nanostructure;
Wherein: In described in the step a
2O
3The purity of powder is analytical pure; The purity of said C powder is spectroscopically pure; The flow of the rare gas element Ar that feeds described in the step c is 0.2～0.8L/min.
2. the preparation method of the said semiconductor material of claim 1, it is characterized in that: this method comprises the steps:
A, with In
2O
3Powder and C powder are put in the quartz boat as the source with 1: 3 molar ratio mixing, and the silicon chip after cleaning is covered on quartz boat, and the vertical range in silicon chip and source is 4～10mm;
B, quartz boat placed be heated to 700～1000 ℃, the middle part of the tubular type reactors of horizontal positioned in advance;
Feed rare gas element Ar in c, the tubular type reactors as carrier gas, reaction 120～360min under atmospheric pressure;
D, taking-up quartz boat and silicon chip obtain compound In on silicon chip
2O
3The semiconductor material of tentaculiform nanostructure;
Wherein: In described in the step a
2O
3The purity of powder is analytical pure; The purity of said C powder is spectroscopically pure; The flow of the rare gas element Ar that feeds described in the step c is 0.2～0.8L/min.
3. preparation method according to claim 2 is characterized in that the tubular type reactors of said horizontal positioned is made up of two pipes, and wherein a pipe range is 70～100cm, and diameter is 6～10cm; Another root pipe range is 50～80cm, and diameter is 3～5cm; During reaction, small-bore pipe inserts in the large-diameter pipe, and carrier gas is directly to be passed in the small-bore pipe.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010174386XA CN101851114B (en) | 2010-05-14 | 2010-05-14 | Semiconductor material prepared by compositing In2O3 tentaculiform nano-structure on silicon chip and preparation method thereof |
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|---|---|---|---|
| CN201010174386XA CN101851114B (en) | 2010-05-14 | 2010-05-14 | Semiconductor material prepared by compositing In2O3 tentaculiform nano-structure on silicon chip and preparation method thereof |
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| CN101851114B true CN101851114B (en) | 2012-08-08 |
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| JP3987932B2 (en) * | 2003-11-07 | 2007-10-10 | 独立行政法人物質・材料研究機構 | Method for producing indium nitride nanowires coated with indium phosphide |
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Non-Patent Citations (5)
| Title |
|---|
| Dan Bai et al.Controllable synthesis and field emission properties of In2O3 nanostructures.《Cryst. Res. Technol.》.2009,第45卷(第2期),第173页第4段，第174页第1段. * |
| JP特开2005-139045A 2005.06.02 |
| ***.In2O3纳米材料的制备和表征及发光特性研究.《中国优秀硕士学位论文全文数据库 工程科技I辑》.2009,(第3期),第13页第2段,第14页第1段,第15页图2-2. * |
| 董红星 等.氧化铟八面体、纳米带、锯齿状纳米线和纳米链的可控合成.《化学学报》.2007,第65卷(第22期),第2611-2617页. * |
| 谢自力 等.In2O3纳米线制备及其特性.《半导体学报》.2006,第27卷(第3期),第536-540页. * |
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