CN101846857B - Ffs型tft-lcd阵列基板及其制造方法 - Google Patents
Ffs型tft-lcd阵列基板及其制造方法 Download PDFInfo
- Publication number
- CN101846857B CN101846857B CN2009100808991A CN200910080899A CN101846857B CN 101846857 B CN101846857 B CN 101846857B CN 2009100808991 A CN2009100808991 A CN 2009100808991A CN 200910080899 A CN200910080899 A CN 200910080899A CN 101846857 B CN101846857 B CN 101846857B
- Authority
- CN
- China
- Prior art keywords
- electrode
- bar
- substrate
- film
- shaped trough
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 33
- 230000005684 electric field Effects 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims description 150
- 239000000203 mixture Substances 0.000 claims description 89
- 238000005516 engineering process Methods 0.000 claims description 82
- 239000004065 semiconductor Substances 0.000 claims description 49
- 238000002161 passivation Methods 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 35
- 230000008021 deposition Effects 0.000 claims description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 11
- 238000004070 electrodeposition Methods 0.000 claims description 8
- 230000000007 visual effect Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 17
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000002207 thermal evaporation Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100808991A CN101846857B (zh) | 2009-03-27 | 2009-03-27 | Ffs型tft-lcd阵列基板及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100808991A CN101846857B (zh) | 2009-03-27 | 2009-03-27 | Ffs型tft-lcd阵列基板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101846857A CN101846857A (zh) | 2010-09-29 |
CN101846857B true CN101846857B (zh) | 2012-02-29 |
Family
ID=42771518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100808991A Expired - Fee Related CN101846857B (zh) | 2009-03-27 | 2009-03-27 | Ffs型tft-lcd阵列基板及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101846857B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103135290A (zh) * | 2011-11-24 | 2013-06-05 | 东莞万士达液晶显示器有限公司 | 边缘电场切换型液晶显示板 |
CN102709237B (zh) * | 2012-03-05 | 2014-06-25 | 京东方科技集团股份有限公司 | 薄膜场效应晶体管阵列基板及其制造方法、电子器件 |
CN103018980A (zh) * | 2012-12-31 | 2013-04-03 | 信利半导体有限公司 | 一种广视角液晶显示器及显示方法 |
CN103197425B (zh) * | 2013-04-10 | 2015-12-09 | 京东方科技集团股份有限公司 | 3d眼镜镜片及其制造方法、3d眼镜 |
CN104570443B (zh) * | 2014-12-30 | 2017-07-28 | 深圳市华星光电技术有限公司 | 像素阵列结构和液晶显示面板 |
JP6907036B2 (ja) * | 2017-06-12 | 2021-07-21 | 株式会社ジャパンディスプレイ | 表示装置 |
CN109407380B (zh) * | 2018-12-05 | 2021-06-11 | 惠科股份有限公司 | 一种显示面板和其制作方法以及显示装置 |
-
2009
- 2009-03-27 CN CN2009100808991A patent/CN101846857B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101846857A (zh) | 2010-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102645803B (zh) | 像素单元,阵列基板、液晶面板、显示装置及其制造方法 | |
CN101846857B (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN102236179B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102023429B (zh) | Tft-lcd阵列基板及其制造和断线修复方法 | |
CN102023433B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102148196B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102881688B (zh) | 一种阵列基板、显示面板及阵列基板的制造方法 | |
CN101957526B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102156368A (zh) | 薄膜晶体管液晶显示阵列基板及其制造方法 | |
CN201853033U (zh) | Ffs型tft-lcd阵列基板 | |
CN101825816A (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102012590B (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN102629584B (zh) | 一种阵列基板及其制造方法和显示器件 | |
CN101840117B (zh) | Tft-lcd阵列基板及其制造方法 | |
US9281325B2 (en) | Array substrate, manufacturing method thereof and display device | |
US7923734B2 (en) | Array substrate of liquid crystal display device and method of manufacturing the same | |
CN101799603B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102033367A (zh) | 显示基板及其制造方法 | |
CN202421681U (zh) | 像素单元、阵列基板、液晶面板及显示装置 | |
CN102819138A (zh) | 阵列基板及显示装置 | |
CN101666949B (zh) | Ips型tft-lcd阵列基板及其制造方法 | |
CN103700663B (zh) | 一种阵列基板及其制作方法、显示装置 | |
CN103412444B (zh) | 一种阵列基板及其制作方法和显示面板 | |
CN101963726A (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN101819361B (zh) | Tft-lcd阵列基板及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150707 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150707 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150707 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee after: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120229 |