CN101845608A - TeOx-based thin film material for laser direct writing and method for preparing same - Google Patents
TeOx-based thin film material for laser direct writing and method for preparing same Download PDFInfo
- Publication number
- CN101845608A CN101845608A CN 201010169391 CN201010169391A CN101845608A CN 101845608 A CN101845608 A CN 101845608A CN 201010169391 CN201010169391 CN 201010169391 CN 201010169391 A CN201010169391 A CN 201010169391A CN 101845608 A CN101845608 A CN 101845608A
- Authority
- CN
- China
- Prior art keywords
- target
- tellurium
- substrate
- film material
- laser direct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a TeOx-based thin film material for laser direct writing and a method for preparing the same. The TeOx-based thin film material is characterized by being formed by depositing metal tellurium (Te) or a stibium-tellurium (SbTe) alloy on a substrate by a reactive magnetron sputtering method. The TeOx-based thin film material (x is more than 0 and less than 2) is used for indicating the laser direct writing of photo-thermal effect and has high oxidation resistance and thermal stability, high compactness of the thin film, high adhesion between the thin film and the substrate, high parameter controllability, high repetitiveness and high contrast before and after photoetching, so the TeOx-based thin film material is suitable to be used as a laser direct-writing material.
Description
Technical field
The present invention relates to laser direct-writing, particularly a kind of TeO that is used for laser direct-writing
XBased film material and preparation method thereof.
Background technology
The laser direct-writing technology be along with the development of large-scale integrated circuit in 20th century the mid-80 propose, though historical and not very long, obtained significant progress.So-called laser direct-writing, the laser beam that utilizes intensity variable exactly becomes dose exposure to the photoetching material of substrate surface, and the photoetching material surface forms desired embossment profile.Because of its once-forming and not have discretize approximate, the diffraction efficiency of device and make the device that ratio of precision conventional semiconductor processing alignment makes and all improve a lot is widely used in various fine patterns and makes the making of grating and binary optical device etc.This continuous development to the laser direct-writing material has proposed requirement.So constantly there is the researchist to develop various laser direct-writing materials.
Summary of the invention
Purpose of the present invention provides a kind of TeO that is used for laser direct-writing
XBased film material and preparation method thereof, this thin-film material are based on the laser direct-writing material of photo-thermal effect, have excellent oxidation-resistance and thermostability, and contrast gradient is big before and after photoetching.The film of the inventive method preparation has characteristics such as strong adhesion between film density height, film and the substrate, controllable parameters are good, repeated height.
Solution of the present invention is as follows:
A kind of TeO that is used for laser direct-writing
XBased film material, its characteristics be this thin-film material be by metal Te or alloy SbTe by with O
2Reaction and be deposited on the TeO that forms on the K9 glass substrate
XOr (SbTe) O
XLaminated film, wherein the span of X is 0＜X＜2.
The described TeO that is used for laser direct-writing
XThe preparation method of based film material, this method comprises the following steps:
1. the preparation of substrate: adopt the K9 glass substrate of polishing both surfaces, surfaceness is less than 10nm, and substrate is used the dehydrated alcohol ultrasonic cleaning three times again through washing composition and clear water soaking and washing, takes out the back and dries up stand-by with high pure nitrogen;
2. described substrate is placed on the substrate frame of magnetron sputtering coater, tellurium target or tellurium antimony alloy target that sputter is used are placed on the target pedestal of magnetron sputtering coater, and described substrate is positioned at 80～100 millimeters eminences in described target pedestal top;
3. use the mechanical pump and the molecular pump of magnetron sputtering coater, the vacuum tightness of coating equipment vacuum chamber is evacuated to 5 * 10
-4Below the Pa, feed gas, adopting argon gas is that background gas, oxygen are reactant gases, and the span of oxygen and argon flow amount ratio is (0.2～20): 80, and keeping the sputter operating air pressure is 0.2～0.7Pa; Adopt radio-frequency power supply, sputtering power is 30～50W, ar atmo is ionized into argon ion under electric field action, and under electromagnetic field effect bombardment described tellurium target or tellurium antimony alloy target, a part of atoms metal of described tellurium target or tellurium antimony alloy target and oxygen reaction generate oxide compound and another part unreacted metal atom is splashed on the described substrate simultaneously, after 3 to 7 minutes, on described substrate, form TeO
XOr (SbTe) O
XLaminated film, the scope of X is between 0 to 2.
Described target is that diameter 60mm, purity are tellurium target or the tellurium antimony alloy target more than 99.9%.
Technique effect of the present invention:
The TeO that is used for laser direct-writing that the present invention proposes
XBased film material is based on the excellent laser direct-writing material of photo-thermal effect, has excellent oxidation-resistance and thermostability, and contrast gradient is big before and after photoetching, is suitable as the laser direct-writing material.
Adopt blue laser on the high-precision two-dimensional mobile platform to TeO of the present invention
XBased film material carries out laser direct-writing, has obtained good submicron pattern.Experiment show film that preparation method that the present invention adopts obtains have good tack is arranged between density height, film and the substrate, good, the repeated advantages of higher of process parameter controllability.
Embodiment
The invention will be further described below in conjunction with embodiment, but should not limit protection scope of the present invention with this.
The present invention is used for the TeO of laser direct-writing
XBased film material be by metal Te or alloy SbTe by with O
2Reaction and be deposited on the TeO that forms on the K9 glass substrate
XOr (SbTe) O
XLaminated film, wherein the span of X is 0＜X＜2.
The present invention is used for the TeO of laser direct-writing
xThe preparation method of based film material comprises the following steps:
1. the preparation of substrate: adopt the K9 glass substrate of polishing both surfaces, surfaceness is less than 10nm, and substrate is used the dehydrated alcohol ultrasonic cleaning three times again through washing composition and clear water soaking and washing, takes out the back and dries up stand-by with high pure nitrogen;
2. described substrate is placed on the substrate frame of magnetron sputtering coater, tellurium target or tellurium antimony alloy target that sputter is used are placed on the target pedestal of magnetron sputtering coater, and described substrate is positioned at 80～100 millimeters eminences in described target pedestal top;
3. use the mechanical pump and the molecular pump of magnetron sputtering coater, the vacuum tightness of coating equipment vacuum chamber is evacuated to 5 * 10
-4Below the Pa, feed gas, adopting argon gas is that background gas, oxygen are reactant gases, and the span of oxygen and argon flow amount ratio is (0.2～20): 80, and keeping the sputter operating air pressure is 0.2～0.7Pa; Adopt radio-frequency power supply, sputtering power is 30～50W, ar atmo is ionized into argon ion under electric field action, and under electromagnetic field effect bombardment described tellurium target or tellurium antimony alloy target, a part of atoms metal of described tellurium target or tellurium antimony alloy target and oxygen reaction generate oxide compound and another part unreacted metal atom is splashed on the described substrate simultaneously, after 3 to 7 minutes, on described substrate, form TeO
XOr (SbTe) O
XLaminated film, the scope of X is between 0 to 2.
Described target is that diameter 60mm, purity are tellurium target or the tellurium antimony alloy target more than 99.9%.
Embodiment 1:
With tellurium Te target is example, and substrate is the K9 glass wafer of polishing both surfaces, and diameter and thickness are respectively 30mm and 1.2mm, and surfaceness is less than 10nm.Substrate soaks and the clear water cleaning through washing composition, uses the dehydrated alcohol ultrasonic cleaning again three times, takes out the back and dries up with high purity nitrogen.The target that sputter is used is the metallic target Te of diameter 60mm, purity 99.9%, metallic target Te is placed on the target pedestal of magnetron sputtering coater; Start the mechanical pump and the molecular pump of magnetron sputtering coater then, system's base vacuum degree is extracted into 2 * 10
-4Behind the Pa, feed gas, adopting argon gas is that background gas, oxygen are reactant gases, and oxygen and argon flow amount ratio are 1: 80, and keeping the sputter operating air pressure is 0.7Pa; The sputtering power of radio-frequency power supply is 40W, and sputtering time 5min finally makes and comprises Te and TeO
2The laminated film of component, film thickness 100nm.Find by test laminated film, the film density height that makes, the tack between film and the substrate is good, utilizes laser directly to write the back and finds that contrast gradient is big before and after the photoetching, oxidation-resistance and Heat stability is good.
Other examples are as shown in the table.
| Embodiment | Target | Base vacuum degree (Pa) | Oxygen argon flow amount ratio | Sputtering pressure (Pa) | Sputtering power (W) | Sputtering time (min) | Substrate | Laminated film (0＜x＜2) |
| ??2 | ??Te | ??1×10 4 | ??0.6∶80 | ??0.7 | ??30 | ??7 | K9 glass | ??TeO x |
| ??3 | ??Te | ??2×10 -4 | ??0.8∶80 | ??0.5 | ??50 | ??3 | K9 glass | ??TeO x |
| ??4 | ??Te | ??2.5×10 -4 | ??1.2∶80 | ??0.5 | ??40 | ??5 | K9 glass | ??TeO x |
| ??5 | ??Sb 2Te 3 | ??3×10 -4 | ??0.2∶80 | ??0.7 | ??40 | ??5 | K9 glass | ??(SbTe)O x |
| ??6 | ??Sb 2Te 3 | ??3.2×10 -4 | ??0.6∶80 | ??0.7 | ??30 | ??7 | K9 glass | ??(SbTe)O x |
| ??7 | ??Sb 2Te 3 | ??3.5×10 -4 | ??0.8∶80 | ??0.5 | ??50 | ??3 | K9 glass | ??(SbTe)O x |
| ??8 | ??Sb 2Te 3 | ??1.8×10 4 | ??1.0∶80 | ??0.5 | ??40 | ??5 | K9 glass | ??(SbTe)O x |
Claims (3)
1. TeO who is used for laser direct-writing
XBased film material, it is characterized in that this thin-film material be by metal Te or alloy SbTe by with O
2Reaction and be deposited on the TeO that forms on the K9 glass substrate
XOr (SbTe) O
XLaminated film, wherein the span of X is 0＜X＜2.
2. the described TeO that is used for laser direct-writing of claim 1
xThe preparation method of based film material is characterized in that this method comprises the following steps:
1. the preparation of substrate: adopt the K9 glass substrate of polishing both surfaces, surfaceness is less than 10nm, and substrate is used the dehydrated alcohol ultrasonic cleaning three times again through washing composition and clear water soaking and washing, takes out the back and dries up stand-by with high pure nitrogen;
2. described substrate is placed on the substrate frame of magnetron sputtering coater, tellurium target or tellurium antimony alloy target that sputter is used are placed on the target pedestal of magnetron sputtering coater, and described substrate is positioned at 80～100 millimeters eminences in described target pedestal top;
3. use the mechanical pump and the molecular pump of magnetron sputtering coater, the vacuum tightness of coating equipment vacuum chamber is evacuated to 5 * 10
-4Below the Pa, feed gas, adopting argon gas is that background gas, oxygen are reactant gases, and the span of oxygen and argon flow amount ratio is (0.2～20): 80, and keeping the sputter operating air pressure is 0.2～0.7Pa; Adopt radio-frequency power supply, sputtering power is 30～50W, ar atmo is ionized into argon ion under electric field action, and under electromagnetic field effect bombardment described tellurium target or tellurium antimony alloy target, a part of atoms metal of described tellurium target or tellurium antimony alloy target and oxygen reaction generate oxide compound and another part unreacted metal atom is splashed on the described substrate simultaneously, after 3 to 7 minutes, on described substrate, form TeO
XOr (SbTe) O
XLaminated film, the span of X is between 0 to 2.
3. the TeO that is used for laser direct-writing according to claim 2
XThe preparation method of based film material is characterized in that described target is that diameter 60mm, purity are tellurium target or the tellurium antimony alloy target more than 99.9%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010169391 CN101845608A (en) | 2010-05-07 | 2010-05-07 | TeOx-based thin film material for laser direct writing and method for preparing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010169391 CN101845608A (en) | 2010-05-07 | 2010-05-07 | TeOx-based thin film material for laser direct writing and method for preparing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101845608A true CN101845608A (en) | 2010-09-29 |
Family
ID=42770424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010169391 Pending CN101845608A (en) | 2010-05-07 | 2010-05-07 | TeOx-based thin film material for laser direct writing and method for preparing same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101845608A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102411941A (en) * | 2011-10-28 | 2012-04-11 | 中国科学院上海光学精密机械研究所 | Mask layer of super-resolution compact disc and preparation method thereof |
| CN104846348A (en) * | 2015-04-24 | 2015-08-19 | 苏州华维纳纳米科技有限公司 | Method for making microcircuit through using laser direct writing |
| CN105220117A (en) * | 2015-09-07 | 2016-01-06 | 胡万谦 | A kind of preparation method of metal nanoparticle ordered micro structure |
| TWI575096B (en) * | 2016-02-01 | 2017-03-21 | 光洋應用材料科技股份有限公司 | Ni-Te Sputtering Target and Ni-Te Oxide Material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002298436A (en) * | 2001-03-28 | 2002-10-11 | Matsushita Electric Ind Co Ltd | Optical information recording medium and method of manufacturing for the same |
| CN1682299A (en) * | 2002-09-18 | 2005-10-12 | 松下电器产业株式会社 | Optical information recording medium and production method therefor |
| CN1920977A (en) * | 2006-09-20 | 2007-02-28 | 中国科学院上海光学精密机械研究所 | Inorganic recording material for blue light recordable storage and its preparing method |
-
2010
- 2010-05-07 CN CN 201010169391 patent/CN101845608A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002298436A (en) * | 2001-03-28 | 2002-10-11 | Matsushita Electric Ind Co Ltd | Optical information recording medium and method of manufacturing for the same |
| CN1682299A (en) * | 2002-09-18 | 2005-10-12 | 松下电器产业株式会社 | Optical information recording medium and production method therefor |
| CN1920977A (en) * | 2006-09-20 | 2007-02-28 | 中国科学院上海光学精密机械研究所 | Inorganic recording material for blue light recordable storage and its preparing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102411941A (en) * | 2011-10-28 | 2012-04-11 | 中国科学院上海光学精密机械研究所 | Mask layer of super-resolution compact disc and preparation method thereof |
| CN104846348A (en) * | 2015-04-24 | 2015-08-19 | 苏州华维纳纳米科技有限公司 | Method for making microcircuit through using laser direct writing |
| CN105220117A (en) * | 2015-09-07 | 2016-01-06 | 胡万谦 | A kind of preparation method of metal nanoparticle ordered micro structure |
| TWI575096B (en) * | 2016-02-01 | 2017-03-21 | 光洋應用材料科技股份有限公司 | Ni-Te Sputtering Target and Ni-Te Oxide Material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101077046B1 (en) | New metal strip product | |
| US20060207890A1 (en) | Electrochemical etching | |
| US10822721B2 (en) | Method to improve MOCVD reaction process by forming protective film | |
| CN101845608A (en) | TeOx-based thin film material for laser direct writing and method for preparing same | |
| CN103594306B (en) | A kind of diamond/metallic composite supporting rod and preparation method | |
| CN108468017A (en) | A kind of magnetically controlled sputter method preparing silver-colored graphite composite deposite in copper contact surfaces | |
| CN108468030B (en) | Magnetron sputtering method for silver plating on surface of copper contact | |
| US11299801B2 (en) | Structure and method to fabricate highly reactive physical vapor deposition target | |
| US8795840B2 (en) | Coated article and method for making the same | |
| CN102051497B (en) | Preparation methods of gold and silver embedded target and film thereof | |
| Cheng et al. | Development of texture in TiN films deposited by filtered cathodic vacuum arc | |
| CN110629174B (en) | Method for preparing Ti-Al-N hard film by using pull-type nitrogen plasma enhanced reaction atmosphere environment | |
| TWI490354B (en) | Housing and method for making the same | |
| KR101078231B1 (en) | Manufacturing method of metal separator for polymer electrolyte fuel cell coated with conductive metal oxide | |
| CN103233207A (en) | Method for preparing secondary electron emission functional thin film via radiofrequency magnetron co-sputtering | |
| CN106756845A (en) | It is a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat | |
| TWI490358B (en) | Housing and method for making the same | |
| CN101736324A (en) | Microwave plasma preparation method of superhard titanium nitride thin film | |
| KR101045364B1 (en) | PCB manufacturing method using high radiation metal plate | |
| CN100370584C (en) | Method of in-situ depositing high dielectric constant Al2O3 and metal film on GaAs substrate | |
| CN100349264C (en) | Method of in-situ depositing high dielectric constant Al2O3 and metal film on GaN base compound material | |
| CN109706430A (en) | A kind of TixSi1-xThe preparation method of C/Ag conductive composite coating | |
| CN100349265C (en) | Method of in-situ depositing high dielectric constant ferric oxide and metal film on indium phosphide material | |
| CN108193178A (en) | A kind of crystalline state WC hard alloy film and its buffer layer technique room temperature growth method | |
| CN114318230B (en) | Method for forming silver-containing metal layer on organic adhesive layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100929 |