CN101840025A - Linear photon crystal device - Google Patents
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- CN101840025A CN101840025A CN 201010169159 CN201010169159A CN101840025A CN 101840025 A CN101840025 A CN 101840025A CN 201010169159 CN201010169159 CN 201010169159 CN 201010169159 A CN201010169159 A CN 201010169159A CN 101840025 A CN101840025 A CN 101840025A
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Abstract
The invention relates to a linear photon crystal device, and belongs to the technical field of the optical communication technology. The linear photon crystal device of the invention comprises a photon crystal and a beam deflector, wherein the beam deflector is positioned on one side of the photon crystal and used for deflecting the light beam input into a photon crystal conduction band or the light beam output from the photon crystal conduction band through the beam deflector. By using the linear photon crystal device of the invention, a fully optical diode from visible light to optical communication waveband can be realized; and the linear photon crystal device has the advantages of high practicability, simple processing and convenient use and measurement.
Description
Technical field
The present invention relates to a kind of linear photon crystal device, belong to the optical communication technique field.
Background technology
Realizing supper-fast information transmission and processing with photon as information carrier, is the important directions of photonics technical development.All-optical diode is a kind of integrated photonic device that can realize the unidirectional conducting of photon, utilize the interaction of photon and material to realize the unidirectional conducting function of signal beams fully, be one of core devices of structure integrated photon loop and the calculation of realization photometry, all have very important application background in fields such as optical communication, optical interconnection network and supper-fast information processings.At present, research for all-optical diode both at home and abroad still mainly concentrates on the theoretical research aspect, utilize the saturated absorption and the anti-saturated absorption effect [document 1 of nonlinear optical material, R.Philip, M.Anija, C.S.Yelleswarapu, and D.V.G.L.N.Rao, " Passive All-Optical Diode Using Asymmetric Nonlinear Absorption ", Appl.Phys.Lett.2007,91 (14): 141118], photonic bandgap effect [document 2, X.S.Lin, the J.H.Wu of photonic crystal, andS.Lan, " High Transmission Contrast For Single Resonator Based All-Optical DiodeWith Pump-Assisting ", Opt.Express 2008,16 (25): 20949-20954; Document 3, H.Zhou, K.F.Zhou, W.Hu, Q.Guo, S.Lan, X.S.Lin, A.V.Gopal, " All-Optical Diodes BasedOn Photonic Crystal Molecules Consisting Of Nonlinear Defect Pairs ", J.Appl.Phys.2006,99 (12): 123111] semi-conductor tiny cavity [document 4, S.Pereira, P.Chak, J.E.Sipe, L.Tkeshelashvili, and K.Busch, " All-Optical Diode In An Asymmetrically Apodized KerrNonlinear Microresonator System ", Photon.Nanostruct.-Fundamentals and Appl.2004,2:181-190], negative refractive index material [document 5, M.W.Feise, I.V.Shadrivov, and Y.S.Kivshar, " Bistable Diode Action In Left-Handed Periodic Structures ", Phy.Rev.B 2005,71 (3): 037602] and chiral material [document 6, A.H.Gevorgyan and M.Z.Harutyunyan, " Chiral PhotonicCrystal With An Anisotropic Defect Layer ", 2007,76 (3): 031701] realize the function of all-optical diode.Aspect the experimental study of all-optical diode, in calendar year 2001, people such as K.Gallo utilize the accurate phase matching effect of periodic polarized lithium columbate crystal to realize the function [document 7 of all-optical diode, K.Gallo, G.Assanto, K.R.Parameswaran, and M.M.Fejer, " All-Optical DiodeIn A Periodically Poled LithiumNiobate Waveguide ", Appl.Phys.Lett.2001,79 (3): 314-316], the periodic polarized polarization process that needs to use expensive template etching and complexity of lithium columbate crystal, and quasi-phase matching requires the power of input light very high, and incident intensity is usually at GW/cm
2Magnitude.In 2004, what people such as S.O.Konorov utilized photonic crystal fiber has realized the function [document 8 of all-optical diode from phase modulation (PM) spectrum widening effect, S.O.Konorov, D.A.S.Biryukov, I.Bugar, M.J.Bloemer, V.I.Beloglazov, N.B.Skibina, D.Chorvatjr.D.Chorvat, M.Scalora, and A.M.Zheltikov, " Experimental Demonstration of aPhotonic-Crystal-Fiber Optical Diode ", Appl.Phys.B, 2004,34 (4): 1417-1420; Document 9, D.A.S.Biryukov, A.B.Fedotov, S.O.Konorov, V.P.Mitrokhin, M.Scalora, and A.M.Zheltikov, " Photonic Crystal Fiber Optical Diode ", Laser Phys.2004,14 (5): 764-766], still, there is very big defective in this method: the one, and very strict to the accuracy requirement of photonic crystal fiber parameter; The 2nd, the pulling process of photonic crystal fiber is easy-regulating not, is difficult to prepare the sample that meets the design parameter requirement; The 3rd, photonic crystal fiber that need longer size, its length in the magnitude of tens centimetres even rice, is difficult to integrated usually; The 4th, need very strong incident optical power equally.In 2005, people such as J.Hwang utilized the liquid crystal heterojunction to realize the function of all-optical diode [document 10, J.Hwang, M.H.Song, B.Park, S.Nishimura, T.Toyooka, J.W.Wu, Y.Takanishi, K.Ishikawa, and H.Takezoe, " Electro-tunable ", Nature Mater.2005,4 (5): 383-387], because it is bigger to deposit the sample cell size of liquid crystal material, be difficult to realize integrated, this has just greatly limited the practical application of all-optical diode.
Patent of invention " based on optical diode of 2 D photon crystal and preparation method thereof " (patent No. ZL200510002913.8) is utilized the quasi-phase matching of non-linear photon crystal, realize the function of all-optical diode, different fully with the content of patent of the present invention.
The super transmission effect that patent of invention " a kind of all-optical diode super-transmission device and preparation method thereof " (application number 200910235522.9) utilizes the surface plasmon resonance coupling to produce, realize the function of all-optical diode, different fully with the content of patent of the present invention.
U.S.'s patent of invention " optical device " (application number US2004/0091224A1) is utilized moving of 2 D photon crystal defect mode resonant frequency that high light induces, realizes the function of all-optical diode, and is different fully with the content of patent of the present invention.
Summary of the invention
The objective of the invention is to overcome photonic crystal fiber in the prior art, periodically poled lithium niobate crystal the preparation process complexity, be difficult to regulate and control, shortcoming that incident optical power is high, a kind of linear photon crystal device is provided, the structure of this device comprises tapered region and photonic crystal two parts, and photonic crystal partly is the 2 D photon crystal of cycle lattice.Tapered region and photonic crystal are by constituting with a kind of linear material, and both directly link to each other.
Another object of the present invention is to utilize this linear photon crystal structure to realize the function of all-optical diode: width (the being frequency range) difference of utilizing photonic crystal photon band gap in different directions, the wavelength of selection laser beam is positioned at the edge of photonic crystal conduction band, then during normal incidence, the wavelength of laser beam is positioned at the conduction band of photonic crystal, can pass through photonic crystal; During oblique incidence, the wavelength of laser beam is arranged in the photon band gap of photonic crystal, and laser beam will be returned by the photonic crystal total reflection and can not be passed through photonic crystal.Therefore, during laser beam forward (from right to left) transmission, laser beam directly enters in the photonic crystal, and because of its wavelength is arranged in conduction band, laser beam can be passed through this structure.During laser beam reverse (from left to right) transmission, laser beam is at first the reflecting at the interface of tapered region and air, the direction of propagation of laser beam by the tapered region deviation after, the oblique photonic crystal that injects, the wavelength of laser beam will be positioned at photon band gap this moment, and laser beam can not be passed through this structure.Thus, realize control action, thereby the application of a kind of linear photon crystal structure as all-optical diode is provided the unidirectional conducting of transmission laser.
Technical scheme of the present invention is:
1. linear photon crystal device structure
Linear photon crystal device structural representation of the present invention as shown in Figure 1, the structure of this linear photon crystal device comprises tapered region and photonic crystal two parts, wherein tapered region and photonic crystal be with a kind of linear optical material or refringence less than two kinds of materials of 3, both directly link to each other.If tapered region and photonic crystal are two kinds of materials, then the material refractive index of tapered region is greater than photonic crystal.Photonic crystal is the 2 D photon crystal of cycle lattice, also can be 1-D photon crystal or three-D photon crystal.
1) to the requirement of material:
The optical material of tapered region and photonic crystal comprises organic and inorganic linear optical material, and third-order nonlinear optical polarizability χ
(3)Coefficient is less than 1 * 10
-9Organic and the inorganic nonlinear optical material of esu:
Organic linear optical material: tygon (Polyethylene is called for short PE), polypropylene (Polypropylene is called for short PP), polyvinyl chloride (Polyvinyl chloride is called for short PVC) etc.;
Third-order nonlinear optical polarizability χ
(3)Coefficient is less than 1 * 10
-9The organic non linear optical material of esu: as polystyrene (polystyrene), poly-phenylene vinylene (ppv) (Poly (p-phenylene vinylene), be called for short PPV) and derivant, polydiacetylene (Polydiacetylene, abbreviation PDA), polyacetylene (Polyacetylene, be called for short PA), polythiophene (Polythiophene is called for short PT) etc.;
Inorganic linear optical material: quartzy (SiO
2), titania (TiO
2), aluminium oxide (Al
2O
3) etc.;
Third-order nonlinear optical polarizability χ
(3)Coefficient is less than 1 * 10
-9The inorganic nonlinear optical material of esu: when incident laser is positioned at visible light wave range, can select barium metaborate crystal (β-BaB for use
2O
4, be called for short BBO), potassium titanyl oxygenic phosphate(KTP) crystal (KTiOPO
4, be called for short KTP), potassium dihydrogen phosphate crystal (KH
2PO
4, be called for short KDP), lithium niobate (LiNbO
3) wait material to visible transparent; When incident laser is positioned at infrared band, can select for use gallium arsenide (GaAs), gallium nitride (GaN), gallium aluminium arsenic (AlGaAs), silicon (Si) etc. to the infrared light material transparent.
These organic and inorganic material can have been bought from the market.
2) to the requirement of size
Whole linear photon crystal structure need determine that in the size of the whole dimension of x and y direction requirement can cover whole incident laser hot spot according to the size of incoming laser beam hot spot;
The thickness h scope of dielectric layer (comprising tapered region and photonic crystal region) is: 200nm-10 μ m allows the basic mode of TE electromagnetic field to transmit in wedge shape and photonic crystal at least;
The scope of airport diameter D is: 50nm～800nm;
The scope of grating constant a is: 100nm～5 μ m
For commaterial, the scope of the vertex angle theta of wedge shape is: 5 °～60 °; For two kinds of materials, the scope of the vertex angle theta of wedge shape is: 0.1 °～60 °;
It is 90 ° that an interior angle is arranged in the wedge shape; Another interior angle equals 90 °-θ;
2. the realization of all-optical diode function
1) implementation method
For photonic crystal, the space periodicity dielectric function is to the modulating action of incident electromagnetic wave and produce photon band gap.And lose on the direction at different ripples, the space distribution of dielectric function is different.When light wave when different directions enters photonic crystal, the space distribution of the dielectric function of the photonic crystal that light wave is seen is different.The modulating action of different spatial dielectric distribution makes that the width (being frequency range) of photonic crystal photon band gap in different directions is variant.
As shown in Figure 2, be the band structure figure of a tetragonal photonic crystal.Frequency field between curve 1 and the curve 2 is a photon band gap, and frequency falls into the electromagnetic wave of photon band gap and can not propagate at photonic crystal.The frequency field of curve below 2 is the conduction band of photonic crystal.Frequency falls into the electromagnetic wave of conduction band and can propagate at photonic crystal.As can be seen, lose on the direction width difference of photon band gap, i.e. the frequency range difference of photon band gap covering at different ripples.
Select the frequency of laser beam to be positioned at the edge of photonic crystal conduction band, as normalized frequency ω=0.27, then during normal incidence, the frequency of laser beam is positioned at the conduction band of photonic crystal, can pass through photonic crystal; When the laser beam oblique incidence, because the dielectric distribution difference of photonic crystal on different ripples mistake directions, the frequency of laser beam moves on in the photon band gap, and laser beam will be returned by the photonic crystal total reflection and can not be passed through photonic crystal.
If laser beam forward (from right to left) transmission, as shown in Figure 3, laser beam directly enters in the photonic crystal, and because of its wavelength is arranged in conduction band, laser beam can be passed through photonic crystal, enters tapered region then, exports from the refraction at the interface of tapered region and air at last.During forward transmitted, laser beam can be passed through this structure, and the beam propagation process is as shown in Figure 4 at this moment:
During laser beam reverse (from left to right) transmission, as shown in Figure 5, laser beam is reflecting at tapered region and air at the interface at first, the direction of propagation of laser beam by the tapered region deviation after, the oblique photonic crystal that injects, the wavelength of laser beam will move on in the photon band gap this moment, and laser beam will be returned by the photonic crystal total reflection and can not be passed through.During reverse transfer, laser beam can not be passed through this structure.This moment beam propagation process such as Fig. 6:
Thus, utilize wedge shape to change the transmission direction of laser beam, realize control action, thereby the application of a kind of linear photon crystal structure as all-optical diode is provided the unidirectional conducting of transmission laser.
2) parameters determines
(1) determining of the parameter of wedge structure:
The interior angle of wedge shape:
The scope of the vertex angle theta of wedge shape is: for commaterial: 5 °～60 °; For two kinds of materials: 0.1 °～60 °;
It is 90 ° that an interior angle is arranged in the wedge shape; Another interior angle equals 90 °-θ;
The size of wedge shape:
Wedge structure need determine that in the size of the whole dimension of x and y direction requirement can cover whole incident laser hot spot according to the size of incoming laser beam hot spot;
(2) determining of photon crystal structure parameter:
1. the 1-D photon crystal lattice parameter determines
1-D photon crystal is alternately to arrange institute successively by two kinds of dielectric materials to constitute.The thickness h of two kinds of materials
1And h
2Calculate according to following formula: h
1=λ/(2n
1), h
2=λ/(2n
2), wherein, λ is a lambda1-wavelength, n
1Be the refractive index of first kind of material, n
2It is the refractive index of second kind of material.
Grating constant a=h
1+ h
2
2. the 2 D photon crystal lattice parameter determines
The grating constant a (distance between the Kong Yukong) of periodicity tetragonal airport:
Can determine according to the wavelength X of incident light, according to bragg's formula:
Wherein λ is the incident light wavelength,
Be effective refractive index, grating constant then
Diameter D=(2/3) a of airport;
The data of more detailed grating constant and airport diameter can be passed through multiple scattering method or Finite Difference-Time Domain separating method, utilize computer Simulation calculation to obtain.
3. the three dimensional photonic crystal lattice parameter determines
The parameter of decision three-D photon crystal mainly is the yardstick d of grating constant a and elementary cell.
The three-D photon crystal of face-centred cubic structure, its grating constant a calculates by following formula:
Wherein,
It is effective refractive index.
The yardstick of elementary cell: l=0.702a;
The data of more detailed grating constant and airport diameter can be passed through multiple scattering method or Finite Difference-Time Domain separating method, utilize computer Simulation calculation to obtain.
4. the size of photonic crystal:
Photonic crystal need determine that in the size of the whole dimension of x and y direction requirement can cover whole incident laser hot spot according to the size of incoming laser beam hot spot;
(3) selection of laser wavelength of incidence:
Can select the wavelength of laser beam as required, the wavelength of laser beam can be positioned at visible light, near infrared or optical communication wave band;
Compared with prior art, the invention has the advantages that:
1, structural parameters such as the grating constant of the drift angle of the wedge shape of linear photon crystal device of the present invention, photonic crystal, airport diameter are easy to adjust, and therefore adopt linear photon crystal device of the present invention can realize all-optical diode from visible light to the optical communication wave band.
2, the all-optical diode that utilizes third-order nonlinear optical effect to realize, common exigent incident optical power.The all-optical diode that adopts linear photon crystal device of the present invention to make does not utilize any third-order nonlinear optical effect, gets final product work when more weak incident optical power, and practicality is very strong;
3, linear photon crystal device preparation technology of the present invention is simple, be easy to the all-optical diode structure integrated, thereby adopt the all-optical diode preparation of linear photon crystal device of the present invention simple, need not complicated preparation processing technology, use and measure conveniently.
Description of drawings
Fig. 1 is a two-dimensional linear photon crystal device structural representation of the present invention;
Fig. 2 is the band structure figure of tetragonal photonic crystal;
Fig. 3 is that laser beam forward (from right to left) transmission is by the linear photon crystal device synoptic diagram;
During Fig. 4 forward transmitted, laser beam can be passed through this structure, at this moment the beam propagation procedure chart;
Fig. 5 is that laser beam reverse (from left to right) transmission is by the linear photon crystal device synoptic diagram;
During Fig. 6 reverse transfer, laser beam can be passed through this structure, at this moment the beam propagation procedure chart;
Fig. 7 is the device synoptic diagram that the linear photon crystal structure among the present invention is used as all-optical diode;
Fig. 8 be in the embodiment of the invention 1 during forward transmitted the linear photon crystal structure see through spectral curve;
Fig. 9 be in the embodiment of the invention 1 during reverse transfer the linear photon crystal structure see through spectral curve;
Figure 10 is an one-dimensional linear photon crystal device structural representation of the present invention;
Figure 11 is an one-dimensional linear photon crystal device all-optical diode effect in the embodiment of the invention 4;
Figure 12 is a three-dimensional linear photon crystal device structural representation of the present invention;
The drawing explanation:
1, dielectric layer (photonic crystal region)
2, airport
3, dielectric layer (tapered region)
A, grating constant
The diameter of D, airport
The thickness of h, dielectric layer
The drift angle of θ, wedge shape
d
1, the air groove width
d
2, the medium strip width
L, elementary cell diameter
4, laser instrument 5, convergent lens 6, linear photon crystal device sample
7, convergent lens 8, convergent lens 9, monochromator
10, photomultiplier 11, lock-in amplifier 12, chopper
13, computing machine
Embodiment
Describe the present invention below in conjunction with drawings and Examples:
Utilize soi wafer common on the market, the thickness of silicon layer is 230nm.Soi wafer is cut into long and the wide 0.5mm of being square block, utilizes microelectronics industry focused-ion-beam lithography technology (perhaps other photoetching technique) commonly used on silicon, to etch linear photon crystal device.The vertex angle theta of wedge shape is 12 °, and an interior angle is 90 °, and another interior angle is 78 °; The grating constant of photonic crystal is 250nm, and the diameter of airport is 167nm.The normalized frequency of incident laser is 0.32 (corresponding wavelength is 1550nm).
Linear photon crystal device in the Application Example 1 is as the all-optical diode of optical communication wave band:
Fig. 7 is the device synoptic diagram that the embodiment of the invention 1 neutral line photon crystal device is used as full light optical diode.Wherein laser instrument 4 is that (the relevant company of the U.S. makes femtosecond OPO laser instrument, wavelength 400nm-1.8 μ m is adjustable, repetition frequency 86MHz), the quasi-continuous lasing that sends by chopper 12 copped waves after, after convergent lens 5 focusing, inject linear photon crystal device sample 6 perpendicular to the dielectric layer surface, after transmitted light is assembled by convergent lens 7, inject the entrance slit of monochromator 9 through collecting lens 8, after the output signal of monochromator 9 is amplified through photomultiplier 10, the signal input part of input lock-in amplifier 11, the reference input of the signal input lock-in amplifier 11 that chopper 12 sends carries out the collection and the processing of data by computing machine 13 at last.
Carry out frequency sweeping by femtosecond OPO laser instrument, can obtain the spectrum that sees through of linear photon crystal device.
When the laser beam forward was injected this linear photon crystal device, laser beam at first entered photonic crystal, reflects from wedge shape then.Incident laser intensity 200KW/cm
2The time, the laser intensity that sees through from linear photon crystal device is 180KW/cm
2, transmitance reaches 90%, as shown in Figure 8.
When laser beam is oppositely injected this linear photon crystal device, after laser beam is at first reflected by wedge shape, the oblique photonic crystal that injects, incident laser intensity 200KW/cm
2The time, the laser intensity that sees through from linear photon crystal device is less than 2W/cm
2, transmitance is less than 0.01%, as shown in Figure 9.Realized surveying the unidirectional control action of passing through of optical transmission process.
The diode effect of embodiment 3 two-dimensional linear photon crystal devices (tapered region and photonic crystal are different materials)
Utilize common semiconductor alignment coating technique (as molecular beam epitaxy and chemical vapor deposition etc.), long and wide be respectively that 5mm, thickness are on the MgO substrate of 1mm, parallel thick silicon of 300nm and the lithium niobate of plating, the area of silicon and lithium niobate respectively is 0.25mm * 5mm.Utilize microelectronics industry focused-ion-beam lithography technology (perhaps other photoetching technique) commonly used, etch linear photon crystal device, make that tapered region is a silicon, and photonic crystal is a lithium niobate at the join domain of silicon and lithium niobate.The vertex angle theta of tapered region is 19 °, and an interior angle is 90 °, and another interior angle is 71 °; The grating constant of photonic crystal is 360nm, and the diameter of airport is 154nm.The wavelength of incident laser is 1550nm.
When the laser beam forward was injected this linear photon crystal device, incident laser intensity was 200KW/cm
2, the laser intensity that sees through from linear photon crystal device is 178KW/cm
2, transmitance reaches 89%;
When laser beam was oppositely injected this linear photon crystal device, incident laser intensity was 200KW/cm
2, the laser intensity that sees through from linear photon crystal device is less than 5W/cm
2, transmitance has realized surveying the unidirectional control action of passing through of optical transmission process less than 0.025%.
The diode effect of embodiment 4 one-dimensional linear photon crystal devices
Utilize soi wafer common on the market, the thickness of silicon layer is 230nm.Soi wafer is cut into long and the wide 0.5mm of being square block, utilizes microelectronics industry focused-ion-beam lithography technology (perhaps other photoetching technique) commonly used to etch the one-dimensional linear photon crystal device on silicon, structural representation as shown in figure 10.The width of air groove is 387nm, the width 110nm of silicon strip, and the vertex angle theta of wedge shape is 12 °, and an interior angle is 90 °, and another interior angle is 78 °; The wavelength of incident laser is 1550nm.
When the laser beam forward was injected this linear photon crystal device, the transmitance of incident laser was 99%; When laser beam was oppositely injected this linear photon crystal device, the transmitance of incident laser was less than 0.06%, as shown in figure 11.Realized surveying the unidirectional control action of passing through of optical transmission process.
The diode effect of embodiment 5 three-dimensional linear photon crystal devices
In the quartz crystal with a block length 10mm, wide 5mm, thick 5mm, utilize ripe laser micro-nano process technology, etch three-dimensional linear photon crystal device, as shown in figure 12.Pulsed laser energy is lower than quartzy damage threshold, and the quartzy refractive index at focus place is changed.The width 150nm of medium strip, the vertex angle theta of wedge shape is 52 °, and an interior angle is 90 °, and another interior angle is 38 °; The wavelength of incident laser is 1550nm.
When the laser beam forward was injected this linear photon crystal device, the transmitance of incident laser was 75%; When laser beam was oppositely injected this linear photon crystal device, the transmitance of incident laser had realized surveying the unidirectional control action of passing through of optical transmission process less than 5%.
Claims (9)
1. a linear photon crystal device is characterized in that comprising a photonic crystal and a beam deflector; Described beam deflector is positioned at a side of described photonic crystal, is used for carrying out deflection to the light beam of importing described photonic crystal conduction band through this beam deflector or to the light beam from described photonic crystal conduction band output.
2. device as claimed in claim 1 is characterized in that described photonic crystal and described beam deflector are positioned on the dielectric layer; The thickness of described dielectric layer is 200nm～10 μ m.
3. device as claimed in claim 1 or 2 is characterized in that described photonic crystal is a 2 D photon crystal; Described beam deflector is a wedge-shaped medium layer.
4. device as claimed in claim 3 is characterized in that described wedge-shaped medium layer and described photonic crystal are commaterial; Described wedge-shaped medium layer is connected with described photonic crystal one.
5. device as claimed in claim 4 is characterized in that the grating constant of described photonic crystal
Airport diameter D=(2/3) a; Wherein, λ is the incident light wavelength,
The photonic crystal effective refractive index.
6. as claim 4 or 5 described devices, the drift angle that it is characterized in that described wedge-shaped medium layer is 5 °～60 °.
7. device as claimed in claim 1 is characterized in that described photonic crystal is 1-D photon crystal or three-D photon crystal; Described beam deflector is a wedge-shaped medium layer.
8. device as claimed in claim 7, the refringence that it is characterized in that described wedge-shaped medium layer material and described photon crystal material is 0～3, and the material refractive index of described tapered region is greater than the material refractive index of described photonic crystal; Described wedge-shaped medium layer is connected with described photonic crystal one.
9. device as claimed in claim 1 is characterized in that described wedge-shaped medium layer material and described photon crystal material are that organic linear optical material or inorganic linear optical material or third-order nonlinear optical polarizability coefficient are less than 1 * 10
-9The organic non linear optical material of esu or third-order nonlinear optical polarizability coefficient are less than 1 * 10
-9The inorganic nonlinear optical material of esu.
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| CN111458791A (en) * | 2020-03-12 | 2020-07-28 | 深圳大学 | All-optical diode based on two-dimensional material and preparation method thereof |
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| CN104460174A (en) * | 2014-12-12 | 2015-03-25 | 南昌航空大学 | Implementation method of all-optical diode based on two-dimensional photonic crystal |
| CN104460174B (en) * | 2014-12-12 | 2017-04-05 | 南昌航空大学 | A kind of implementation method of the all-optical diode based on 2 D photon crystal |
| CN107466366A (en) * | 2015-04-21 | 2017-12-12 | 科磊股份有限公司 | The system and method that run time for spot scan wafer inspection systems is aligned |
| CN107466366B (en) * | 2015-04-21 | 2019-09-10 | 科磊股份有限公司 | The system and method that runing time for spot scan wafer inspection systems is aligned |
| CN109478603A (en) * | 2016-03-15 | 2019-03-15 | 萨瑟兰德·库克·埃尔伍德 | Magneto-optic sub-encoders |
| CN109478603B (en) * | 2016-03-15 | 2021-06-18 | 萨瑟兰德·库克·埃尔伍德 | Magnetic photon encoder |
| CN108828716A (en) * | 2018-06-19 | 2018-11-16 | 中国石油大学(华东) | A kind of all-optical diode |
| CN110262045A (en) * | 2019-06-18 | 2019-09-20 | 天津大学 | A kind of quick method for continuously adjusting of salt free ligands two-dimension optical lattice period |
| CN110262045B (en) * | 2019-06-18 | 2020-10-02 | 天津大学 | Diffraction-free two-dimensional optical lattice period rapid and continuous adjusting method |
| CN111458791A (en) * | 2020-03-12 | 2020-07-28 | 深圳大学 | All-optical diode based on two-dimensional material and preparation method thereof |
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