CN101835298A - Dynamic light adjustment large-area field emission backlight - Google Patents
Dynamic light adjustment large-area field emission backlight Download PDFInfo
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- CN101835298A CN101835298A CN 201010165818 CN201010165818A CN101835298A CN 101835298 A CN101835298 A CN 101835298A CN 201010165818 CN201010165818 CN 201010165818 CN 201010165818 A CN201010165818 A CN 201010165818A CN 101835298 A CN101835298 A CN 101835298A
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Abstract
The invention relates to a dynamic light adjustment large-area field emission backlight which comprises a plurality of field emission backlight units. The field emission backlight units are arranged on a plane independently and arrayed into a large-area field emission backlight. The invention solves the problems of small color range, uneven brightness, short service life, large volume, high power consumption and environmental harmfulness of mercury when adopting a CCFL (Cold Cathode Fluorescent Lamp) as a backlight, and also solves the problems of difficult heat dissipation and uneven brightness when adopting am LED as a large-area backlight, which greatly reduces the cost. Furthermore, the backlight area of the dynamic light adjustment large-area field emission backlight in the invention is divided into a plurality of small areas, each of which can be adjusted independently according to the image brightness of corresponding part, which enhances the contrast of a passive large-area display effectively.
Description
Technical field
The present invention relates to a kind of backlight, particularly relate to a kind of dynamic light adjustment large-area field emission backlight.
Background technology
Backlight is in the field of information display extensive application.Present large-area backlight mainly adopts cold-cathode fluorescence lamp (CCFL) or semiconductor light-emitting-diode (LED) to assemble, and it is mainly used in the multiple passive type large area display that comprises LCD.But the CCFL colour gamut is narrow, luminance uniformity is not enough, the life-span is short, volume is big, power consumption is high and contain environmentally harmful mercury metal, and these shortcomings cause its application on large tracts of land backlight field to be replaced by the LED-backlit source gradually.And adopt LED to exist heat radiation difficult as the large tracts of land backlight, and the problem of luminance nonuniformity need be done complicated heat dissipation design and optical design, needs heating panel, and other heat radiations such as light guide plate and the former device of optics cause its Application Design cost height as accessory part.
Along with the development of information display technology and people to improving constantly that the color of display device, aspect such as energy-conservation require, to power consumption, contrast and the gamut range demands for higher performance in display backlight source, the backlight Technology Need develops towards aspects such as low energy consumption, low cost, high brightness, high-contrast and long-lives.Therefore, provide a kind of satisfy above-mentioned requirements and solve in-problem novel backlight source, above-mentioned LED-backlit source significant.
Summary of the invention
The invention provides a kind of dynamic light adjustment large-area field emission backlight, it is luminous evenly, backlight accessory parts such as diffusion sheet, light guide plate, reflecting plate, solved that the colour gamut that exists when adopting CCFL as backlight is narrow, luminance uniformity is not enough, the life-span is short, volume is big, power consumption is high and contained the problem of environmentally harmful mercury metal, also solved the heat radiation difficulty that adopts LED to exist as the large tracts of land backlight, the problem of brightness disproportionation greatly reduces the problem of production cost.
The present invention is achieved in that a kind of dynamic light adjustment large-area field emission backlight, it is characterized in that: it comprises several field emission back light units, and separate being located on the plane of described several field emission back light units is permutated and combined as large-area field emission backlight.
Described field emission back light unit is the field emission unit of two utmost point formula structures or the field emission unit of multipolar system structure.
The field emission unit of described two utmost point formula structures comprises negative electrode, anode, banding body, spacer leg, getter, blast pipe; Described anode is located at the top of described negative electrode, and described banding body is located at all sides between described negative electrode and the anode, and described banding body, described negative electrode and anode constitute annular seal space jointly; Described spacer leg is located in the described annular seal space and between negative electrode and anode; Described getter is located in the described annular seal space, and described blast pipe is located at the annular seal space perimembranous of described field emission back light unit.
The field emission unit of described multipolar system structure is field emission unit or the field emission unit of preceding grid structure or field emission unit or the field emission unit of double-gate structure or the field emission unit of multi-gate structure of back grid structure of parallel gate structure.
A kind of dynamic light adjustment large-area field emission backlight of the present invention adopts the field emission illuminating source, luminous even, need not auxiliary optical assemblies such as diffusion sheet, light guide plate, reflecting plate, direct backlight has low cost, environmental protection, an advantage such as the life-span is long, the visual angle is wide, brightness is high, energy consumption is low, colour gamut is broad, the response time is short and operating temperature range is wide.In addition, the present invention is also advantageous in that dynamic light adjustment, the backlight area of this dynamic light adjustment large-area field emission backlight is divided into several zonules, and independent adjustment can be carried out according to the image brightness of counterpart in each zonule, has effectively improved passive type large area display contrast of display degree.
Description of drawings
Fig. 1 is the large-area field emission backlight schematic diagram of embodiment 1 two-level structure dynamic light adjustment;
Fig. 2 is the structure cutaway view of single two utmost point formula field emission unit among the embodiment 1;
Fig. 3 is the large-area field emission backlight schematic diagram of embodiment 2 back grid structure dynamic light adjustments;
Fig. 4 is the perspective exploded view of single back grid structure field emission light source back light unit among the embodiment 2.
Embodiment
Further specify the present invention below in conjunction with drawings and Examples.
Consult Fig. 1 and Fig. 2, Fig. 1 is the large-area field emission backlight schematic diagram of embodiment 1 two-level structure dynamic light adjustment, and Fig. 2 is the structure cutaway view of embodiment 1 single two utmost point formula field emission unit.In present embodiment 1, this spliced large-area field emission planar display light source 10 comprises 144 field emission back light units, separate being located on the plane of described 144 field emission back light units is arranged into 9 row, 16 row, is combined into large-area field emission backlight 10.Described field emission back light unit 11 is field emission unit of two utmost point formula structures, and the field emission unit of this two utmost points formula structure comprises negative electrode 21, anode 20, banding body 22, spacer leg 23, getter 24, blast pipe 25; Described anode 20 is located at the top of described negative electrode 21, and described banding body 22 is located at all sides between described negative electrode 21 and the anode 20, described banding body 22, described negative electrode 21 and anode 20 common formation annular seal spaces; Described spacer leg 23 is located in the described annular seal space and between negative electrode and anode, in order to support negative electrode 21 and anode 20; Described getter 24 is located at the cathode base central authorities in the described annular seal space, and described blast pipe 25 is located on the cathode base 212 of described field emission back light unit, in order to when encapsulating the gas in the annular seal space is discharged.
Described negative electrode comprises conductive layer 211 and the electron emission layer 210 on cathode base 212, the cathode base 212; Conductive layer 211 on this cathode base 212 is located on the cathode base 212, described electron emission layer 210 is located on the conductive layer 211 on this cathode base 212, the conductive layer 211 on the described cathode base 212 and be located at electron emission layer 210 on this conductive layer and be the strip spacing and be distributed on the described cathode base 212.Described cathode base 212 is square transparent glass substrates, and the conductive layer 211 on the described cathode base is wire silver slurry conductive layers (conductive silver film).The silver slurry conductive layer of this wire is to be prepared from by the photoetching process preparation or by direct silk screen printing conductive silver paste by the photosensitive silver slurry.Described electron emission layer 210 materials are carbon nano-tube emissive materials, and it is by electrophoretic deposition process, the carbon nano-tube emissive material are transferred on the conductive layer of being located on the cathode base 211, form electron emission layer 210.
Described anode 20 comprises conductive layer 201, phosphor powder layer 202 and the aluminium film 203 on anode substrate 200, the anode substrate, conductive layer 201 on this anode substrate is located on the anode substrate 200, described phosphor powder layer 202 is located on the conductive layer 201 on the described anode substrate, and described aluminium film 203 is located on the phosphor powder layer 202.Described anode substrate 200 is transparent glass substrates, and described conductive layer 201 is ITO transparent conductive films.The described phosphor powder layer of being located on the anode conductive layer 202 is selected high-photoelectric transformation efficiency, low applied voltage and long afterglow for use and is contained R, G, B color phosphor.The described aluminium film of being located on the phosphor powder layer 203 can prevent fluorescent material premature aging in the beam bombardment process, improves light-source brightness simultaneously.
Banding body 22 in the present embodiment 1 comprises firm glass bar and glass powder with low melting point, and it is used to support negative electrode 21 and anode 20.In addition, spacer leg 23 is selected the quartz glass spacer leg, because it is located between negative electrode 21 and the anode 20, is also played a supporting role in the two poles of the earth behind device sealing.Under the support of banding body 22 and spacer leg 23, field emission back light unit can sustain extraneous pressure.
In the present embodiment 1, described getter 23 is to concentrate the non-formula getter that evapotranspires.
In the present embodiment, when spliced large-area field emission planar display light source 10 uses, cathode electronics emission layer 210 is emitting electrons under the electric field action of 21 on anode 20 and negative electrode, the phosphor powder layer 203 in the electronic impact anode 20, thus make phosphor powder layer 203 luminous.By controlling the emission of each independent field emission back light unit internal electron in the spliced large-area field emission planar display light source 10, and then can control the luminous of each independent field emission back light unit respectively, make the spliced large-area field emission planar display light source can dynamic light adjustment.
In addition, present embodiment is the square field emission planar light source of large tracts of land of 144 separate field emission back light units being lined up 9 row, 16 row, it also can be according to the requirement of actual displayed light source area, separate field emission back light unit is spliced into different area, difform planar light source, to meet the application under the different occasions.
Consult Fig. 3 and Fig. 4, Fig. 3 represents the large tracts of land field emission schematic diagram backlight of the embodiment of the invention 2 back grid structure dynamic light adjustments;
Fig. 4 is the perspective exploded view of single back grid structure field emission light source back light unit among the embodiment 2.Spliced large-area field emission planar display light source is made up of the field emission unit of multipolar system structure, and in present embodiment 2, the field emission unit of this multipolar system structure is the field emission unit of back grid structure.Specifically, this spliced large-area field emission planar display light source 40 comprises 36 field emission back light units 41, described 36 field emission back light units, 41 separate being located on the plane are arranged into 6 row, 6 row, are combined into large-area field emission backlight 40.Described field emission back light unit 41 is field emission unit of back grid structure, and the field emission unit of this back grid structure comprises negative electrode, anode, banding body, spacer leg, getter, blast pipe; Described anode is located at the top of described negative electrode, and described banding body is located at all sides between described negative electrode and the anode, and described banding body, described negative electrode and anode constitute annular seal space jointly; Described spacer leg is located in the described annular seal space and between negative electrode and anode, in order to support negative electrode and anode; Described getter is located in the described annular seal space, and described blast pipe is located at all sides of described field emission back light unit; Described negative electrode comprises cathode base 51, grid conducting layer 52, insulating medium layer 53, cathode conductive layer 54 and electron emission layer 55; Described grid conducting layer 52 is the strip spacing and is distributed on the described cathode base 51, described insulating medium layer 53 is located at the top of described grid conducting layer 52, described cathode conductive layer 54 is located at the top of described insulating medium layer 53, and described insulating medium layer 53 is with grid conducting layer 52 and cathode conductive layer 54 insulation.Described electron emission layer 55 is located at the top of described cathode conductive layer 54, and described cathode conductive layer 54 and electron emission layer 55 are the strip spacing and are distributed on the described insulating medium layer 53; Described anode comprises conductive layer, phosphor powder layer and the aluminium film on anode substrate, the anode substrate, and described conductive layer is located on the anode substrate, and described phosphor powder layer is located on the conductive layer on the described anode substrate, and described aluminium film is located on the phosphor powder layer.
Described cathode base is a transparent glass substrate, and described grid conducting layer 52 and cathode conductive layer 54 are circular face silver slurry conductive layers (silver conductive film), and wherein silver slurry conductive layer is to be prepared from by the silk screen printing conductive silver paste.The material of described electron emission layer 55 is zinc oxide emissive materials, and it is by electrophoretic deposition process, and the zinc oxide emissive material is transferred on the conductive layer 54, forms electron emission layer 55.
Conductive layer on the described anode substrate is the ITO transparent conductive film, and the phosphor powder layer on this conductive layer is selected high-photoelectric transformation efficiency, low applied voltage and long afterglow for use and contained R, G, B color phosphor.The described aluminium film of being located on the phosphor powder layer can prevent the premature aging of fluorescent material in the beam bombardment process, improves light-source brightness simultaneously.
Banding body in the present embodiment 2 comprises firm glass bar and glass powder with low melting point, and it is used to support negative electrode and anode.In addition, spacer leg is selected the quartz glass spacer leg, because it is located between negative electrode and the anode, is also played a supporting role in the two poles of the earth behind device sealing.Under the support of banding body and spacer leg, field emission back light unit can sustain extraneous pressure.
In the present embodiment 2, described getter is to concentrate the non-formula getter that evapotranspires.
In present embodiment 2, when spliced large-area field emission planar display light source 40 used, the cathode electronics emission layer is emitting electrons under the electric field action between anode and negative electrode, the phosphor powder layer in the electronic impact anode, thus make photoluminescent phosphor layer.By controlling the emission of each independent field emission back light unit internal electron in the spliced large-area field emission planar display light source 10, and then can control the luminous of each independent field emission back light unit respectively, make the spliced large-area field emission planar display light source can dynamic light adjustment.
In addition, present embodiment is the square field emission planar light source of large tracts of land of 36 separate field emission back light units being lined up 6 row, 6 row, it also can be according to the requirement of actual displayed light source area, separate field emission back light unit is spliced into different area, difform planar light source, to meet the application under the different occasions.
In addition, the conductive layer of being located on the cathode base in the foregoing description also can be the CrCuCr conductive layer, and wherein this CrCuCr conductive layer can be prepared from by photoetching process; Electron emission layer on the cathode conductive layer in the foregoing description can also be selected nanofiber, magnesium oxide, zinc oxide, tin oxide or close nanometer emissive material for use; Getter in the foregoing description can also be the formula getter that evapotranspires; Getter in the foregoing description can also be positioned over other positions in the described annular seal space; Blast pipe in the foregoing description can also be located on the described banding body of all sides of described field emission back light unit, perhaps is located on the anode substrate, perhaps other positions on the cathode base; The conductive layer of being located in the foregoing description on the cathode base can also be to contain Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, the single thin film of a kind of metallic element among the Ti, or contain Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, the multi-layer compound film of the multiple metallic element among the Ti or alloy firm, or contain the oxide of the Sn with conductivity, the oxide of Zn, the semiconductive thin film of the wherein a kind of oxide in the oxide of In, or contain the oxide of the Sn with conductivity, the oxide of Zn, the semiconductive thin film that multiple oxide in the oxide of In is formed; The conductive layer of being located in the foregoing description on the anode substrate (comprising grid conducting layer) can also be to contain Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, the single thin film of a kind of metallic element among the Ti, or contain Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, the multi-layer compound film of the multiple metallic element among the Ti or alloy firm, or contain the oxide of the Sn with conductivity, the oxide of Zn, the semiconductive thin film of the wherein a kind of oxide in the oxide of In, or contain the oxide of the Sn with conductivity, the oxide of Zn, the semiconductive thin film that multiple oxide in the oxide of In is formed.
It is to be noted, the field emission unit of multipolar system structure not only can adopt the field emission unit of the back grid structure among the embodiment 2, can also be the field emission unit of other kind multipolar system structure, as: the field emission unit of the field emission unit of parallel gate structure, the field emission unit of preceding grid structure, double-gate structure or the field emission unit of multi-gate structure etc.Here just give unnecessary details no longer one by one.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (4)
1. dynamic light adjustment large-area field emission backlight, it is characterized in that: it comprises several field emission back light units, separate being located on the plane of described several field emission back light units is permutated and combined as large-area field emission backlight.
2. a kind of dynamic light adjustment large-area field emission backlight according to claim 1 is characterized in that: described field emission back light unit is the field emission unit of two utmost point formula structures or the field emission unit of multipolar system structure.
3. a kind of dynamic light adjustment large-area field emission backlight according to claim 1 is characterized in that: the field emission unit of described two utmost point formula structures comprises negative electrode, anode, banding body, spacer leg, getter, blast pipe; Described anode is located at the top of described negative electrode, and described banding body is located at all sides between described negative electrode and the anode, and described banding body, described negative electrode and anode constitute annular seal space jointly; Described spacer leg is located in the described annular seal space and between negative electrode and anode; Described getter is located in the described annular seal space, and described blast pipe is located at the annular seal space perimembranous of described field emission back light unit.
4. a kind of dynamic light adjustment large-area field emission backlight according to claim 1 is characterized in that: the field emission unit of described multipolar system structure is field emission unit or the field emission unit of preceding grid structure or field emission unit or the field emission unit of double-gate structure or the field emission unit of multi-gate structure of back grid structure of parallel gate structure.
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| CN2010101658180A CN101835298B (en) | 2010-05-08 | 2010-05-08 | Dynamic light adjustment large-area field emission backlight |
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| CN2010101658180A CN101835298B (en) | 2010-05-08 | 2010-05-08 | Dynamic light adjustment large-area field emission backlight |
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| CN101835298B CN101835298B (en) | 2012-06-27 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976549A (en) * | 2010-11-17 | 2011-02-16 | 福州大学 | Dynamic dimming circuit for splicing large-area field emission backlight |
| CN105554933A (en) * | 2016-02-04 | 2016-05-04 | 重庆墨希科技有限公司 | Flexible graphene cold light board |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101086577A (en) * | 2006-06-07 | 2007-12-12 | 中国科学院半导体研究所 | LCD backlight source structure of LED illumination |
| CN101158779A (en) * | 2006-10-08 | 2008-04-09 | 东元电机股份有限公司 | LCD taking dynamic field emitting set as back light source |
-
2010
- 2010-05-08 CN CN2010101658180A patent/CN101835298B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101086577A (en) * | 2006-06-07 | 2007-12-12 | 中国科学院半导体研究所 | LCD backlight source structure of LED illumination |
| CN101158779A (en) * | 2006-10-08 | 2008-04-09 | 东元电机股份有限公司 | LCD taking dynamic field emitting set as back light source |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976549A (en) * | 2010-11-17 | 2011-02-16 | 福州大学 | Dynamic dimming circuit for splicing large-area field emission backlight |
| CN101976549B (en) * | 2010-11-17 | 2012-06-27 | 福州大学 | Dynamic dimming circuit for splicing large-area field emission backlight |
| CN105554933A (en) * | 2016-02-04 | 2016-05-04 | 重庆墨希科技有限公司 | Flexible graphene cold light board |
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| Publication number | Publication date |
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| CN101835298B (en) | 2012-06-27 |
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