CN101834175B - LED lighting COB (Chip on Board) packaging structure and bubble sphere - Google Patents
LED lighting COB (Chip on Board) packaging structure and bubble sphere Download PDFInfo
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- CN101834175B CN101834175B CN201010171678.8A CN201010171678A CN101834175B CN 101834175 B CN101834175 B CN 101834175B CN 201010171678 A CN201010171678 A CN 201010171678A CN 101834175 B CN101834175 B CN 101834175B
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- chip
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- led illumination
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000005286 illumination Methods 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000000889 atomisation Methods 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 7
- 210000005056 cell body Anatomy 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000004313 glare Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED lighting COB (Chip on Board) packaging structure and a bubble sphere, aiming to solve the problem of manufacturing a high-power LED lamp by a low-power chip to disperse the heat radiation of the chip, also improve the glare effect of the LED lamp and reduce the uncomfortable feeling of people on the glare of the LED lamp. The LED lighting COB packaging structure comprises a plurality of LED chips and circuit substrates of the LED chips, wherein each circuit substrate comprises a heat sink and a lead; the heat sinks are twisted on the circuit substrates in a spiral shape; the LED chips are distributed and fixed on the heat sinks along spiral lines of the heat sinks; the leads are used for electrically connecting the LED chips together and are distributed at the side edges of the heat sinks; and the electrodes of the LED chips are connected with the leads positioned at the side edges of the heat sinks through electrode lead wires. The invention is mainly used for the bubble sphere and a similar lamp.
Description
Technical field
The present invention relates to a kind of field of LED illumination, particularly relate to COB (the chip on board) encapsulation technology of LED.
Background technology
In conventional chamber, the application of LED ball bubble is main uses high-power encapsulation.There is dazzle in high-power making ball bubble easily to exceed standard, and the difficult problems such as difficulty of dispelling the heat.The special processings such as atomization must be carried out to lamp surface cover material for solving glare problem, whole light effect is seriously reduced to the dependence of lampshade atomization technique.High-power chip is concentrated because of thermogenetic, and the limited space of ball bubble own, is difficult to be concentrated by high-power chip the heat of generation effectively to import fin, can affects the work of driving, cause reliability decrease time serious simultaneously.
Summary of the invention
First technical problem to be solved by this invention is: provide a kind of LED illumination COB encapsulating structure, this structure manufactures the problem of high-powered LED lamp with solving small-power chip, with the heat radiation of dispersed chip, improve the glare effect of LED simultaneously, reduce people to the sense of discomfort of LED dazzle.
Second technical problem to be solved by this invention is: the ball bubble providing a kind of LED illumination COB to encapsulate, by the problem solving small-power chip and manufacture high-powered LED lamp, with the heat radiation of dispersed chip, improve the glare effect of LED simultaneously, reduce people to the sense of discomfort of LED dazzle.
In order to solve first technical problem of the present invention, the present invention proposes a kind of LED illumination COB encapsulating structure, comprises the circuit substrate of multiple LED chip and LED chip;
Described circuit substrate comprises heat sink, heat sinkly to coil twist on circuit substrate, chip along the distribution of heat sink helical path be fixed on heat sink on;
Circuit substrate comprises the wire be connected together by chip electrical, harness wiring is at heat sink side, and the electrode of chip is connected with the wire being positioned at heat sink side by contact conductor.
Preferably: described chip is the chip of bipolar electrode, and harness wiring is at heat sink dual-side.
Preferably: described chip is unipolar chip, harness wiring is at a heat sink side.
Preferably: the substrate of the chip of described bipolar electrode is Sapphire Substrate, or the substrate of chip is gallium arsenide substrate.Sapphire Substrate is normally as the substrate of blue green light LED, and it is non-conductive, and therefore two electrodes of chip are all made in above substrate.And gallium arsenide substrate is conductive substrates, the substrate of its normally red LED chip, if made bipolar electrode, then general needs does electronic barrier layer in gallium arsenide substrate.
Preferably: the substrate of described unipolar chip is the substrate of silicon, carborundum, any one types of material of metal.This is a kind of chip of vertical stratification.
Preferably, described chip electrical connects relation and comprises: for the chip of bipolar electrode, multiple continuous distribution be fixed on heat sink on chip-in series form one group of series chip group together, then many group series chip groups are connected in parallel.
Preferably: for the chip of bipolar electrode, multiple continuous distribution be fixed on heat sink on chip to be connected in parallel formation one group of parallel chip group, then many group parallel chip groups are cascaded.
Preferably, for the chip of bipolar electrode, circuit substrate comprises: multiple continuous distribution be fixed on heat sink on chip-in series form one group of series chip group together, then many group series chip groups are connected in parallel; And, multiple continuous distribution be fixed on heat sink on chip to be connected in parallel formation one group of parallel chip group, then many group parallel chip groups are cascaded, and the mixed of above-mentioned two situations takes wiring.
Preferably: for the chip of bipolar electrode, all chip-in series together.
Preferably: all chips are connected in parallel.This situation is applicable to the chip of bipolar electrode and unipolar chip.
Preferably: for the chip of unipolar two kinds of different operating voltages, the chip of voltage of the same race is connected in parallel, the circuit that two kinds of chips are not public is divided into heat sink both sides.
Preferably: on chip, be coated with fluorescent powder packaging glue, fluorescent powder packaging glue is only along the heat sink coating of spirality.This Method compare saves fluorescent material, but operation is comparatively complicated.
Preferably: whole circuit substrate is covered coating by fluorescent powder packaging glue.This mode is simple to operate, but can waste fluorescent material.
Preferably: chip is blue chip, fluorescent material is yellow fluorescent powder.
Preferably: to be describedly heat sinkly located on bottom surface that its cross section is the cell body of inverted trapezoidal.
Preferably: described heat sink uninterrupted continuously along helicoidal course, or disconnect.Heat sink can continuous distribution on whole helicoidal course, what also can become segment is distributed on helicoidal course, becomes to disconnect shape.
Preferably: described heat sink be aluminium, copper or silver-colored at least one material.Also can be other metal or metal alloy.
In order to solve second technical problem of the present invention, the present invention proposes the ball bubble that a kind of LED illumination COB encapsulates, and it comprises any one LED illumination COB encapsulating structure above-mentioned.
Preferably: chip is encapsulated on circuit substrate by packaging plastic, this packaging plastic is epoxy resin or silica gel.
Preferably: ball bubble comprises lampshade, this lampshade is through atomization process or lens process.Atomization process can alleviate dazzle sense, and in view of the present invention can use a lot of small-power chip, the light that they send disperses very much, and dazzle sense greatly alleviates, and particularly when dazzle sense alleviates, light efficiency improves a lot.Therefore, all need under adopting the not all situation of lampshade of atomization process.Employing is atomized lampshade under special circumstances, when sacrificing light efficiency, can alleviate dazzle sense further.Lens process lampshade is that cover surface is made a lot of lenslet, produces more luminous picture point.
Beneficial effect of the present invention:
Compared to existing technology, the present invention proposes a kind of spiral LED chip arrangement, high-power LED chip breaks the whole up into parts by the program, change some low-power LED chips into, be dispersed on circuit substrate, thus heat radiation is become disperse very much, the heat comparing high-power LED chip concentrates on core position, this structure is conducive to chip cooling, and distribute twist due to the distribution of LED chip, LED chip sends light also in dispersed, the light sent disturbs superposition mutually, be not easy the bright spot produced clearly, therefore dazzle sense can be alleviated significantly, lamp is made to send light more even, soft.The present invention can be applied in the LED illumination lamp such as ball bubble.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention a pair of electrode chip elder generation and the structural representation of rear string.
Fig. 2 is the cross sectional representation of the heat sink and cell body of embodiment one.
Fig. 3 be the bipolar electrode chip of embodiment two first go here and there after and structure diagram.
Fig. 4 is the full structure diagram also of bipolar electrode chip of embodiment three.
Fig. 5 is the structure diagram that the bipolar electrode chip of embodiment four is gone here and there entirely.
Fig. 6 is the full structure diagram also of single electrode chip of embodiment five.
Embodiment
The present invention proposes a kind of LED illumination COB encapsulating structure and has the ball bubble of this structure, and this structure comprises the circuit substrate of multiple LED chip and LED chip; Circuit substrate comprises heat sink, heat sinkly to coil twist on circuit substrate, chip along the distribution of heat sink helical path be fixed on heat sink on; Circuit substrate comprises the wire be connected together by chip electrical, harness wiring is at heat sink side, and the electrode of chip is connected with the wire being positioned at heat sink side by contact conductor.
Below provide description, to make those skilled in the art can manufacture and use the present invention, and these to describe be provide under the background of embody rule and demand thereof.To those skilled in the art, various amendment can be carried out to disclosed embodiment, and under the prerequisite not leaving Spirit Essence of the present invention and scope, the General Principle limited can be applied to other embodiment and application here.Thus, the present invention is not limited to shown embodiment, but consistent with the most wide region of claim.
Embodiments of the invention one, referring to structural representation shown in Fig. 1, this example adopts first and the circuit connecting relation of rear string.
Circuit substrate 1 is provided with spiral-shaped heat sink 3.Referring to Fig. 2, heat sink 3 are located on the bottom surface of cell body 8 that its cross section is inverted trapezoidal.Heat sink 3 is aluminium.The chip 2 that the helical path along heat sink 3 distributes is had on heat sink 3.Chip 2 is the blue chip of bipolar electrode Sapphire Substrate, its by elargol be fixed on heat sink on.Chip 2 is encapsulated in cell body 8 by packaging plastic 7.Be mixed with yellow fluorescent powder in packaging plastic 7, when blue chip is luminous, excites yellow fluorescent powder, send white light.Packaging plastic is preferably the epoxy resin of lower cost.
Circuit substrate 1 comprises the wire be electrically connected by chip 2.As shown in Figure 1, wire comprises outer conductor 5 and inside conductor 6.Outer conductor 5 and inside conductor 6 lay respectively at outside and the inner side of heat sink 3.Wire distributes along the spirality trend of heat sink 3 along road.The electrode of chip 2 is connected with wire by contact conductor 4.
See Fig. 1, every eight chips are connected in parallel composition one group of parallel chip group.The outer conductor of first group of parallel chip group 28 and second group of parallel chip group 29 disconnects, and inside conductor is connected, to form first and rear string relation.Such group relation by that analogy, as long as between two adjacent groups side wire be connected then opposite side guiding disconnect.
In this example, LED chip is all select small-power chip, form the LED of same power, compare large chip, use little chip that chip heating area can be made more to disperse, being derived by the heat of a large-area thermal source derives efficient and easier than the heat of the thermal source by a small size, is so more conducive to heat radiation.Because little chip is in the heat sink arrangement of spiral, outer ring and inner ring position can form radial misalignments, and this makes the Guang Shu district produced due to the gap between group and group be made up, and produces uniformly light-emitting.Compare large chip, because illuminating source area more disperses, and evenly, therefore the luminous rear dazzle sense to people will alleviate a lot.
When required lamp more powerful, little chip can be increased by the mode adding long spire outer ring to increase power, design very convenient.
Embodiments of the invention two, shown in Fig. 3.This example be the little chip of LED first go here and there after and circuit connecting relation.
Compare embodiment one, as shown in the figure, heat sink 9 of this example is positioned at cell body 30, it has bipolar electrode LED chip 10, and chip 10 is connected with each wire by contact conductor 14.Often organize chipset and have 5 little chips, 5 little chips are together in series each other, and series conductor 11 is located at heat sink both sides by chip order by the mutual mistake of grain, is got up by chip-in series successively.The head end (or tail end) of every core assembly sheet is received and is positioned on the same parallel conducting wire of heat sink homonymy, and this parallel conducting wire is along the heat sink wiring of spirality.In Fig. 3, the head end of every core assembly sheet is connected on inside conductor 13 in parallel, and tail end is connected on outer conductor 12 in parallel.
Embodiment three, shown in Fig. 4, this example is the whole situation in parallel of chip.
Compare embodiment one, as shown in Figure 4, bipolar electrode chip 15 is positioned on heat sink 16.Chip 16 is connected with each wire by contact conductor 17.Chip of these row does not divide into groups, and each chip, all with the outer conductor 18 in heat sink outside be connected with the inside conductor 19 of heat sink inner side, forms a LED luminosity scale.
Embodiment four, shown in Fig. 5, this example is the situation that chip is all connected.
Compare embodiment one, as shown in Figure 5, bipolar electrode chip 20 is positioned on heat sink 21.The chip of these row does not also divide into groups.The head and the tail of each chip are linked together by wire.Wire is located at heat sink both sides by chip order by grain dislocation.
Embodiment six, referring to Fig. 6, this example is the whole situation in parallel of single electrode chip.
Compare embodiment one, the chip 24 of this example is single electrode chip.Therefore, heat sink 25 need as a common electrode of chip, chip 24 with heat sink 25 to be connected be conduct electricity in bottom.Wire 27 is established in the side of heat sink 25.Chip 24 is connected by contact conductor 26 with wire 27.Each chip and wire 27 connect to form a circuit structure all in parallel.
Except above-mentioned example, because circuit substrate can adopt sandwich construction, therefore change structure of the present invention is very abundant, such as heat sink uninterrupted continuously along helicoidal course, or disconnects.Heat sink can continuous distribution on whole helicoidal course, what also can become segment is distributed on helicoidal course, becomes to disconnect shape, according to multi-layer PCB design series-parallel circuit.
The aforementioned description of the embodiment of the present invention is only the purpose of illustration and description and provides.They and non-exclusive, or be not intended to the present invention to be constrained to form disclosed herein.Thus, to those skilled in the art, not deviating under the prerequisite as the scope and spirit of appended claim invention disclosed, be apparent for many modifications and variations of the present invention.
If manufacture ball bubble according to the technology of the present invention, even if generally do not carry out atomization process to the lampshade of ball bubble, the weak glare effect that obtain more a lot of than high-power chip also can be obtained.In order to obtain better weak glare effect, also can in a conventional manner, the lampshade of ball bubble is atomized or lens process to obtaining more perfect effect.
Claims (10)
1. a LED illumination COB encapsulating structure, comprises the circuit substrate of multiple LED chip and LED chip; It is characterized in that:
Described circuit substrate comprises heat sink, heat sinkly to coil twist on circuit substrate, chip along the distribution of heat sink helical path be fixed on heat sink on;
Circuit substrate comprises the wire be connected together by chip electrical, harness wiring is at heat sink side, and the electrode of chip is connected with the wire being positioned at heat sink side by contact conductor.
2. LED illumination COB encapsulating structure according to claim 1, is characterized in that: described chip is the chip of bipolar electrode, and harness wiring is at heat sink dual-side; Or chip is unipolar chip, harness wiring is at a heat sink side.
3. LED illumination COB encapsulating structure according to claim 2, is characterized in that: the substrate of the chip of described bipolar electrode is Sapphire Substrate, or the substrate of chip is gallium arsenide substrate; Or
The substrate of described unipolar chip is the substrate of silicon, carborundum, any one types of material of metal.
4. LED illumination COB encapsulating structure according to claim 2, it is characterized in that described chip electrical connects relation and comprises: for the chip of bipolar electrode, multiple continuous distribution be fixed on heat sink on chip-in series form one group of series chip group together, then many group series chip groups are connected in parallel; Or
For the chip of bipolar electrode, multiple continuous distribution be fixed on heat sink on chip to be connected in parallel formation one group of parallel chip group, then many group parallel chip groups are cascaded; Or
For the chip of bipolar electrode, the mixed of above-mentioned two situations is taken; Or
For the chip of bipolar electrode, all chip-in series together; Or
All chips are connected in parallel; Or
For the chip of unipolar two kinds of different operating voltages, the chip of voltage of the same race is connected in parallel, and the not public circuit of two kinds of chips is divided into heat sink both sides.
5. LED illumination COB encapsulating structure according to claim 1, is characterized in that: on chip, be coated with fluorescent powder packaging glue, and fluorescent powder packaging glue is only along the heat sink coating of spirality; Or whole circuit substrate is covered coating by fluorescent powder packaging glue; Or chip is blue chip, fluorescent material is yellow fluorescent powder.
6. LED illumination COB encapsulating structure according to claim 1, is characterized in that: to be describedly heat sinkly located on bottom surface that its cross section is the cell body of inverted trapezoidal.
7. LED illumination COB encapsulating structure according to claim 1, is characterized in that: described heat sink uninterrupted continuously along helicoidal course, or disconnects; Or
Described heat sink be aluminium, copper or silver-colored at least one material.
8. the ball bubble of a LED illumination COB encapsulation, is characterized in that the LED illumination COB encapsulating structure comprised described in any one of claim 1 to 7.
9. the ball bubble of LED illumination COB encapsulation according to claim 8, it is characterized in that: chip is encapsulated on circuit substrate by packaging plastic, this packaging plastic is epoxy resin or silica gel.
10. the ball bubble of LED illumination COB encapsulation according to claim 8, it is characterized in that: ball bubble comprises lampshade, this lampshade is through atomization process or lens process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010171678.8A CN101834175B (en) | 2010-05-13 | 2010-05-13 | LED lighting COB (Chip on Board) packaging structure and bubble sphere |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010171678.8A CN101834175B (en) | 2010-05-13 | 2010-05-13 | LED lighting COB (Chip on Board) packaging structure and bubble sphere |
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| Publication Number | Publication Date |
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| CN101834175A CN101834175A (en) | 2010-09-15 |
| CN101834175B true CN101834175B (en) | 2015-07-15 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810461B (en) * | 2015-03-03 | 2017-11-07 | 深圳市华星光电技术有限公司 | Light-emitting element package part and display |
| CN105140363B (en) * | 2015-08-12 | 2018-03-09 | 华南师范大学 | Power-type visible light communication LED component |
| US10222010B2 (en) | 2015-08-20 | 2019-03-05 | Philips Lighting Holding B.V. | Board mounted LED array |
| CN105953094A (en) * | 2016-06-29 | 2016-09-21 | 海宁市智慧光电有限公司 | Small-power ultralow-luminous decay semiconductor light source |
| CN109768147B (en) * | 2018-12-29 | 2021-06-08 | 中山市木林森电子有限公司 | LED packaging structure and manufacturing method thereof |
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| CN2814676Y (en) * | 2005-06-03 | 2006-09-06 | 明达光电(厦门)有限公司 | Light-emitting diode packaging structure with groove substrate |
| CN2814677Y (en) * | 2005-06-03 | 2006-09-06 | 明达光电(厦门)有限公司 | Light-emitting diode with groove base plate |
| CN201994294U (en) * | 2010-05-13 | 2011-09-28 | 江西省晶和照明有限公司 | Chip on board packaging structure and LED lamp bead |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2874772Y (en) * | 2005-08-18 | 2007-02-28 | 付刚 | Integrated light emitting unit |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2814676Y (en) * | 2005-06-03 | 2006-09-06 | 明达光电(厦门)有限公司 | Light-emitting diode packaging structure with groove substrate |
| CN2814677Y (en) * | 2005-06-03 | 2006-09-06 | 明达光电(厦门)有限公司 | Light-emitting diode with groove base plate |
| CN201994294U (en) * | 2010-05-13 | 2011-09-28 | 江西省晶和照明有限公司 | Chip on board packaging structure and LED lamp bead |
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| CN101834175A (en) | 2010-09-15 |
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Address after: 330096 Nanchang hi tech Zone, Sihu, AI Bei Road, No. 689, No. Applicant after: CECEP LatticeLighting Co., Ltd. Address before: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Applicant before: Jiangxi Jinghe Lighting Co., Ltd. |
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Denomination of invention: LED lighting COB (Chip on Board) packaging structure and bubble sphere Effective date of registration: 20191126 Granted publication date: 20150715 Pledgee: Bank of Communications Ltd Jiangxi branch Pledgor: CECEP LatticeLighting Co., Ltd. Registration number: Y2019360000026 |
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Address after: No. 689, aixihu North Road, high tech Zone, Nanchang City, Jiangxi Province Patentee after: China energy saving Jinghe Technology Co.,Ltd. Address before: No. 689, aixihu North Road, high tech Zone, Nanchang City, Jiangxi Province Patentee before: CECEP LATTICELIGHTING Co.,Ltd. |
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Date of cancellation: 20210426 Granted publication date: 20150715 Pledgee: Bank of Communications Ltd. Jiangxi branch Pledgor: CECEP LATTICELIGHTING Co.,Ltd. Registration number: Y2019360000026 |
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