CN101833203A - TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and manufacturing method thereof - Google Patents
TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and manufacturing method thereof Download PDFInfo
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- CN101833203A CN101833203A CN200910079910A CN200910079910A CN101833203A CN 101833203 A CN101833203 A CN 101833203A CN 200910079910 A CN200910079910 A CN 200910079910A CN 200910079910 A CN200910079910 A CN 200910079910A CN 101833203 A CN101833203 A CN 101833203A
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Abstract
The invention relates to a TFT-LCD (Thin Film Transistor-Liquid Crystal display) array substrate and a manufacturing method thereof. The array substrate comprises a grid line and a data line which are formed on the substrate, a pixel electrode and a thin film transistor are formed in a pixel region limited by the grid line and the data line, and a connection electrode which is used for restoring a line break defect or a short circuit defect is arranged on a passivation layer above the data line. The manufacturing method comprises the following steps of: forming the grid line and a grid electrode pattern; forming an active layer, the data line, a source electrode and a drain electrode pattern; forming a passivation-layer through hole pattern; and depositing a transparent conductive film to form a pattern comprising the pixel electrode and the connection electrode, wherein the pixel electrode is connected with the drain electrode by a passivation-layer through hole, and the connection electrode is positioned above the data line. Because the connection electrode is arranged above the data line, when the line break defect of the data line or the short circuit detect between the data line and the grid line is generated, the data line is cut off by using lasers, and the connection electrode is connected with the data line together. The TFT-LCD array substrate has low restoration difficulty and high restoration success ratio and is convenient to restore.
Description
Technical field
The present invention relates to a kind of LCD Structure of thin film transistor and manufacture method thereof, especially a kind of TFT-LCD array base palte and manufacture method thereof.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid CrystalDisplay, abbreviation TFT-LCD) has characteristics such as volume is little, low in energy consumption, radiationless, obtained in recent years developing by leaps and bounds, in current flat panel display market, occupied leading position.The agent structure of TFT-LCD comprises the array base palte of box and color membrane substrates, the thin film transistor (TFT) and the pixel electrode that wherein are formed with grid line, data line on the array base palte and arrange with matrix-style.
With among the TFT-LCD, transmitance is very important performance index at notebook.In order to reach high permeability, prior art adopts the method that reduces the thin film transistor (TFT) size usually, therefore when the preparation notebook is used the TFT-LCD array base palte, influenced by products characteristics and technology difficulty, because of the bad probability of reason generation short circuits such as static is bigger, it is bad also can to occur in addition breaking between data line and the grid line.When short circuit is bad between bad or data line and the grid line when taking place to break, though prior art has proposed the employing chemical vapor deposition and has repaired the technical scheme that (CVD Repair) method is put up a bridge and repaired, but because the thin film transistor (TFT) size is little, it is not high to repair success ratio, even repair successfully, also will damage at least two pixels, the difficulty of reparation is very big.
Summary of the invention
The purpose of this invention is to provide a kind of TFT-LCD array base palte and manufacture method thereof, when the bad or short circuit of broken string taking place when bad, repair the success ratio height, it is little to repair difficulty.
To achieve these goals, the invention provides a kind of TFT-LCD array base palte, comprise the grid line and the data line that are formed on the substrate, form pixel electrode and thin film transistor (TFT) in the pixel region that described grid line and data line limit, the passivation layer of described data line top is provided with and is used to repair the connection electrode that broken string is bad or short circuit is bad.
Also be provided with public electrode wire in the described pixel region, described public electrode wire and grid line be layer together, and is forming with in a composition technology.
Described connection electrode and pixel electrode be layer together, and is forming with in a composition technology.
On the technique scheme basis, the shape of described connection electrode is identical with the shape of data line.The width of described connection electrode is greater than the width of data line, to cover in data line fully.
To achieve these goals, the present invention also provides a kind of TFT-LCD manufacturing method of array base plate, comprising:
Also be formed with public electrode wire in the described step 1 simultaneously.
Described step 2 can comprise: using plasma strengthens chemical gaseous phase depositing process, deposits gate insulation layer, semiconductive thin film and doped semiconductor films successively; Adopt the method for magnetron sputtering or thermal evaporation, sedimentary origin leaks metallic film; Leak coating one deck photoresist on the metallic film in described source; Adopt the exposure of shadow tone or gray mask plate, make the complete reserve area of photoresist formation photoresist, photoresist remove zone and photoresist half reserve area fully, the complete reserve area of photoresist is corresponding to data line, source electrode and drain electrode figure region, photoresist half reserve area is corresponding to TFT channel region figure region, and photoresist is removed the zone fully corresponding to the zone beyond the above-mentioned figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is removed the photoresist in zone fully and removed the photoresist thickness attenuation of photoresist half reserve area fully; By the first time etching technics etch away photoresist fully and remove the source in zone fully and leak metallic film, doped semiconductor films and semiconductive thin film, form the figure that comprises active layer and data line; Photoresist by cineration technics removal photoresist half reserve area exposes this regional source and leaks metallic film; Leak metallic film and doped semiconductor films by the source that the second time, etching technics etched away photoresist half reserve area fully, and etch away the semiconductive thin film of segment thickness, and this regional semiconductive thin film is come out, form the figure that comprises source electrode, drain electrode and TFT channel region; Peel off remaining photoresist.
Described step 2 also can comprise: using plasma strengthens chemical gaseous phase depositing process, deposits gate insulation layer, semiconductive thin film and doped semiconductor films successively; Adopt the normal masks plate that semiconductive thin film and doped semiconductor films are carried out composition, form the figure that comprises active layer; Adopt the method for magnetron sputtering or thermal evaporation, metallic film is leaked in deposition one deck source; Adopt the normal masks plate that metallic film is leaked in the source and carry out composition, form the figure that comprises data line, source electrode, drain electrode and TFT channel region.
The invention provides a kind of TFT-LCD array base palte and manufacture method thereof, by above data line, forming connection electrode, when broken data wire is bad when taking place, short circuit is bad between bad or gate electrode and the drain electrode of short circuit between gate electrode and the source electrode, only need data line to be cut off with laser, and connection electrode and data line linked together get final product, it is little and convenient to repair difficulty, repairs the success ratio height.In addition, the TFT-LCD array base palte that the present invention is formed with connection electrode still adopts existing process equipment and condition preparation, under the prerequisite that does not increase composition technology, for follow-up maintenance provides condition.Further, adopt the chemical vapor deposition restorative procedure of putting up a bridge to compare with prior art, the present invention only utilizes a pixel can realize the bad reparation of short circuit between broken data wire or data line and the grid line, has avoided the infringement of prior art to two or more pixels.
Description of drawings
Fig. 1 is the planimetric map of TFT-LCD array base palte of the present invention;
Fig. 2 be among Fig. 1 A1-A1 to sectional view;
Fig. 3 be among Fig. 1 B1-B1 to sectional view;
Fig. 4 is the planimetric map after the TFT-LCD array base palte composition technology first time of the present invention;
Fig. 5 be among Fig. 4 A2-A2 to sectional view;
Fig. 6 be among Fig. 4 B2-B2 to sectional view;
Fig. 7 is the planimetric map after the TFT-LCD array base palte composition technology second time of the present invention;
Fig. 8 be among Fig. 7 A3-A3 to sectional view;
Fig. 9 be among Fig. 7 B3-B3 to sectional view;
Figure 10 is TFT-LCD array base palte of the present invention planimetric map after the composition technology for the third time;
Figure 11 be among Figure 10 A4-A4 to sectional view;
Figure 12 be among Figure 10 B4-B4 to sectional view;
Figure 13 is TFT-LCD array base palte maintenance synoptic diagram of the present invention;
Figure 14 is the process flow diagram of TFT-LCD manufacturing method of array base plate of the present invention;
Figure 15 is the process flow diagram of TFT-LCD manufacturing method of array base plate first embodiment of the present invention;
Figure 16 is the process flow diagram of TFT-LCD manufacturing method of array base plate second embodiment of the present invention.
Description of reference numerals:
The 1-substrate; The 2-gate electrode; The 3-gate insulation layer;
The 4-semiconductor layer; The 5-doping semiconductor layer; 6-source electrode;
The 7-drain electrode; The 8-passivation layer; The 9-passivation layer via hole;
The 11-grid line; The 12-data line; The 13-pixel electrode;
The 14-connection electrode; The 15-public electrode wire; The 21-cut-out point;
The 22-pad; 23-short circuit point.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the planimetric map of TFT-LCD array base palte of the present invention, and what reflected is the structure of three pixel cells, Fig. 2 be among Fig. 1 A1-A1 to sectional view, Fig. 3 be among Fig. 1 B1-B1 to sectional view.As Fig. 1～shown in Figure 3, the agent structure of TFT-LCD array base palte of the present invention comprises the grid line 11 that is formed on the substrate 1, data line 12, pixel electrode 13, connection electrode 14 and thin film transistor (TFT), orthogonal grid line 11 and data line 12 have defined pixel region, thin film transistor (TFT) and pixel electrode 13 are formed in the pixel region, grid line 11 is used for providing start signal to thin film transistor (TFT), data line 12 is used for providing data-signal to pixel electrode 13, connection electrode 14 is formed on the passivation layer of data line 12 tops, the bad connecting line of short circuit between bad or data line and the grid line as repair data line broken string.Particularly, thin film transistor (TFT) comprises gate electrode 2, gate insulation layer 3, semiconductor layer 4, doping semiconductor layer 5, source electrode 6, drain electrode 7 and passivation layer 8, and gate electrode 2 is formed on the substrate 1, and is connected with grid line 11; Gate insulation layer 3 is formed on gate electrode 2 and the grid line 11 and covers whole base plate 1, and active layer (semiconductor layer 4 and doping semiconductor layer 5) is formed on the gate insulation layer 3 and is positioned at the top of gate electrode 2; Source electrode 6 and drain electrode 7 are formed on the active layer, one end of source electrode 6 is positioned at the top of gate electrode 2, the other end is connected with data line 12, one end of drain electrode 7 is positioned at the top of gate electrode 2, the other end is connected with pixel electrode 13, forms the TFT channel region between source electrode 6 and the drain electrode 7, and the doping semiconductor layer of TFT channel region is etched away fully, and etch away the semiconductor layer of segment thickness, the semiconductor layer of TFT channel region is come out; Passivation layer 8 is formed on data line 12, source electrode 6, drain electrode 7 and the TFT channel region and covers whole base plate 1, offers the passivation layer via hole 9 that drain electrode 7 is connected with pixel electrode 13 in drain electrode 7 positions.Pixel electrode 13 and connection electrode 14 are formed on the passivation layer 8, and pixel electrode 13 is formed in the pixel region, are connected with drain electrode 7 by passivation layer via hole 9, and connection electrode 14 is positioned at the top of data line 12, and is identical with the shape of data line 12.In the practical application, the width of connection electrode 14 can greater than, be equal to or less than the width of data line 12, preferably, the width of connection electrode 14 is greater than the width of data line 12, to cover in data line 12 fully.In technique scheme of the present invention, can also comprise public electrode wire 15 figures, public electrode wire 15 is formed in the pixel region, and between two grid lines 11, is used for constituting memory capacitance with pixel electrode 13.
Fig. 4～Figure 12 is the synoptic diagram of TFT-LCD array base palte manufacture process of the present invention, can further specify technical scheme of the present invention, in the following description, the alleged composition technology of the present invention comprises technologies such as photoresist coating, mask, exposure, etching and photoresist lift off, and photoresist is example with the positive photoresist.
Fig. 4 is TFT-LCD array base palte of the present invention planimetric map after the composition technology for the first time, and what reflected is the structure of three pixel cells, Fig. 5 be among Fig. 4 A2-A2 to sectional view, Fig. 6 be among Fig. 4 B2-B2 to sectional view.At first adopt the method for magnetron sputtering or thermal evaporation, go up deposition one deck grid metallic film at substrate 1 (as glass substrate or quartz base plate), the grid metallic film can adopt the single thin film of aluminium, chromium, tungsten, tantalum, titanium, molybdenum or aluminium nickel, also can adopt the multi-layer compound film that is made of above-mentioned single thin film.Adopt the normal masks plate that the grid metallic film is carried out composition, form the figure that comprises gate electrode 2 and grid line 11 on substrate 1, gate electrode 2 and grid line 11 are same structure, as Fig. 4～shown in Figure 6.In the practical application, the present invention for the first time also can form public electrode wire 15 figures in the composition technology simultaneously, forms memory capacitance structure of (Cs on Common) on public electrode wire.
Fig. 7 is TFT-LCD array base palte of the present invention planimetric map after the composition technology for the second time, and what reflected is the structure of three pixel cells, Fig. 8 be among Fig. 7 A3-A3 to sectional view, Fig. 9 be among Fig. 7 B3-B3 to sectional view.On the substrate of finishing the said structure figure, at first using plasma strengthens chemical vapor deposition (being called for short PECVD) method, deposit gate insulation layer, semiconductive thin film and doped semiconductor films successively, adopt the method for magnetron sputtering or thermal evaporation then, metallic film is leaked in deposition one deck source.Gate insulation layer 3 can adopt silicon nitride, silicon dioxide or aluminium oxide, and the single thin film that metallic film can adopt aluminium, chromium, tungsten, tantalum, titanium, molybdenum or aluminium nickel is leaked in the source, also can adopt the multi-layer compound film that is made of above-mentioned single thin film.Adopt shadow tone or gray mask plate by the second time composition technology form the figure that comprises active layer, data line 12, source electrode 6, drain electrode 7 and TFT channel region, as Fig. 7～shown in Figure 9.The present invention's composition technology for the second time is a kind of composition technology that adopts the multistep lithographic method, with form active layer in four composition technologies of prior art, data line, the source electrode, drain electrode is identical with the process of TFT channel region figure, technological process is specially: at first leak coating one deck photoresist on the metallic film in the source, adopt shadow tone or gray mask plate that photoresist is exposed, make photoresist form complete exposure area, unexposed area and half exposure area, wherein unexposed area is corresponding to data line, source electrode and drain electrode figure region, half exposure area is corresponding to TFT channel region figure region between source electrode and the drain electrode, and complete exposure area is corresponding to the zone beyond the above-mentioned figure.After the development treatment, the photoresist thickness of unexposed area does not change, and forms the complete reserve area of photoresist, the photoresist of complete exposure area is removed fully, form photoresist and remove the zone fully, the photoresist thickness attenuation of half exposure area forms photoresist half reserve area.Leak metallic film, doped semiconductor films and semiconductive thin film by the source that the first time, etching technics etched away complete exposure area fully, form the figure that comprises active layer and data line.By cineration technics, remove the photoresist of half exposure area, expose this regional source and leak metallic film.Leak metallic film and doped semiconductor films by the source that the second time, etching technics etched away half exposure area fully, and etch away the semiconductive thin film of segment thickness, expose this regional semiconductive thin film, form the figure that comprises source electrode, drain electrode and TFT channel region.Peel off remaining photoresist at last, finish TFT-LCD array base palte of the present invention composition technology for the second time.After this composition technology, grid line 11 and data line 12 define pixel region, and active layer (comprising semiconductor layer 4 and doping semiconductor layer 5) is formed on the gate insulation layer 3, and is positioned at the top of gate electrode 2; Source electrode 6 and drain electrode 7 are formed on the active layer, one end of source electrode 6 is positioned at the top of gate electrode 2, the other end is connected with data line 12, one end of drain electrode 7 is positioned at the top of gate electrode 2, be oppositely arranged with source electrode 6, form the TFT channel region between source electrode 6 and the drain electrode 7, the doping semiconductor layer of TFT channel region is etched away fully, and etch away the semiconductor layer of segment thickness, the semiconductor layer of TFT channel region is come out.In addition, the below of data line 12 remains with doped semiconductor films and semiconductive thin film.
Figure 10 is TFT-LCD array base palte of the present invention planimetric map after the composition technology for the third time, and what reflected is the structure of three pixel cells, Figure 11 be among Figure 10 A4-A4 to sectional view, Figure 12 be among Figure 10 B4-B4 to sectional view.On the substrate of finishing the said structure figure, adopt PECVD method deposition one deck passivation layer 8.Passivation layer 8 can adopt oxide, nitride or oxynitrides.Adopt the normal masks plate that passivation layer is carried out composition, form passivation layer via hole 9, passivation layer via hole 9 is positioned at the top of drain electrode 7, as Figure 10～shown in Figure 12.In this composition technology, also be formed with the grid line interface via hole in grid line interface zone (grid line PAD) and the data line interface via hole figures of data line interface zone (data line PAD) simultaneously, the technology that forms grid line interface via hole and data line interface via pattern by composition technology has been widely used in repeating no more here in the present composition technology.
At last, on the substrate of finishing the said structure figure, adopt the method for magnetron sputtering or thermal evaporation, the deposit transparent conductive film, transparent conductive film can adopt materials such as tin indium oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide, also can adopt other metal and metal oxide.Adopt the normal masks plate in pixel region, to form pixel electrode 13 figures by composition technology, above data line 12, form connection electrode 14 figures, pixel electrode 13 is connected with drain electrode 7 by passivation layer via hole 9, the shape of connection electrode 14 is identical with the shape of data line 12, preferably, connection electrode 14 can cover in data line 12 fully, as Fig. 1～shown in Figure 3.
Four composition technologies discussed above only are a kind of implementation methods of preparation TFT-LCD array base palte of the present invention, can also be by increasing or reduce composition technology number of times, selecting different material or combinations of materials to realize the present invention in actual the use.For example, TFT-LCD array base palte of the present invention composition technology for the second time can adopt the composition technology of normal masks plate to finish by two, promptly form active layer pattern by the composition technology that once adopts the normal masks plate, adopt the composition technology of normal masks plate to form data line, source electrode, drain electrode and TFT channel region figure by another time, form five times composition technology.
Figure 13 is TFT-LCD array base palte maintenance synoptic diagram of the present invention.As shown in figure 13,, at first will cross over the two ends laser cutting of the data line 12 of grid line 11, form cut-out point 21 when occurring short circuit point 23 between gate electrode 2 and the drain electrode 7 when (as electrostatic breakdown takes place).In actual the use, can cut off data line, because data line lays respectively on the different structural sheets with connection electrode, therefore can guarantee only to cut off data line, and guarantee the conducting of connection electrode 14 by the control laser energy from substrate back; Then, adopt the laser bonding mode, connection electrode 14 and data line 12 are welded together, form pad 22 in the outside of cut-out point 21; Because connection electrode 14 is conductings, therefore make cut data line 12 reconnect the normal transmission data-signal by connection electrode 14.When occurring occurring between short circuit bad or data line and the grid line short circuit between gate electrode and the source electrode when bad, disposal route is identical.In addition, when broken string appears in data line 12, can directly adopt the laser bonding mode that the data line 12 at breakpoint two ends is welded together with connection electrode 14, guarantee that data signal transmission is normal.
The invention provides a kind of TFT-LCD array base palte, by above data line, forming connection electrode, when broken data wire is bad when taking place, short circuit is bad between bad or gate electrode and the drain electrode of short circuit between bad, the gate electrode of short circuit and the source electrode between data line and the grid line, only need at substrate back data line to be cut off with laser, and connection electrode and data line linked together get final product, it is little and convenient to repair difficulty, has improved the reparation success ratio.In addition, the TFT-LCD array base palte that the present invention is formed with connection electrode still adopts existing process equipment and condition preparation, under the prerequisite that does not increase composition technology, for follow-up maintenance provides condition.Further, adopt the chemical vapor deposition restorative procedure of putting up a bridge to compare with prior art, the present invention only utilizes a pixel can realize the bad reparation of short circuit between broken data wire or data line and the grid line, has avoided the infringement of prior art to two or more pixels.
Figure 14 is the process flow diagram of TFT-LCD manufacturing method of array base plate of the present invention, comprising:
Further specify the technical scheme of TFT-LCD manufacturing method of array base plate of the present invention below by specific embodiment.
Figure 15 is the process flow diagram of TFT-LCD manufacturing method of array base plate first embodiment of the present invention, comprising:
The method of step 11, employing magnetron sputtering or thermal evaporation, deposition grid metallic film adopts the normal masks plate that the grid metallic film is carried out composition on substrate, forms the figure that comprises gate electrode and grid line;
Present embodiment is a kind ofly to prepare the technical scheme of TFT-LCD array base palte by four composition technology, and its preparation process is introduced in earlier figures 1～technical scheme shown in Figure 12 in detail, repeats no more here.
Figure 16 is the process flow diagram of TFT-LCD manufacturing method of array base plate second embodiment of the present invention, comprising:
The method of step 21, employing magnetron sputtering or thermal evaporation, deposition one deck grid metallic film adopts the normal masks plate that the grid metallic film is carried out composition on substrate, forms the figure that comprises gate electrode and grid line;
Present embodiment is a kind of technical scheme for preparing the TFT-LCD array base palte by five composition technology, be with the second time among aforementioned first embodiment, composition technology split into two composition technologies that adopt the normal masks plates, promptly form active layer pattern, adopt the composition technology of normal masks plate to form data line, source electrode, drain electrode and TFT channel region figure by another time by the composition technology that once adopts the normal masks plate.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (9)
1. TFT-LCD array base palte, comprise the grid line and the data line that are formed on the substrate, form pixel electrode and thin film transistor (TFT) in the pixel region that described grid line and data line limit, it is characterized in that the passivation layer of described data line top is provided with and is used to repair the connection electrode that broken string is bad or short circuit is bad.
2. TFT-LCD array base palte according to claim 1 is characterized in that, also is provided with public electrode wire in the described pixel region, and described public electrode wire and grid line be layer together, and is forming with in a composition technology.
3. TFT-LCD array base palte according to claim 1 is characterized in that, described connection electrode and pixel electrode be layer together, and is forming with in a composition technology.
4. according to the described TFT-LCD array base palte of arbitrary claim in the claim 1～3, it is characterized in that the shape of described connection electrode is identical with the shape of data line.
5. TFT-LCD array base palte according to claim 4 is characterized in that, the width of described connection electrode is greater than the width of data line, to cover in data line fully.
6. a TFT-LCD manufacturing method of array base plate is characterized in that, comprising:
Step 1, on substrate deposition grid metallic film, form the figure that comprises grid line and gate electrode by composition technology;
Step 2, on the substrate of completing steps 1, deposit gate insulation layer, semiconductive thin film, doped semiconductor films and metallic film is leaked in the source, form the figure that comprises active layer, data line, source electrode, drain electrode and TFT channel region by composition technology;
Step 3, on the substrate of completing steps 2 deposit passivation layer, form the figure comprise passivation layer via hole by composition technology, described passivation layer via hole is positioned at the top of drain electrode;
Step 4, on the substrate of completing steps 3 the deposit transparent conductive film, form the figure comprise pixel electrode and connection electrode by composition technology, described pixel electrode is connected with drain electrode by passivation layer via hole, described connection electrode is positioned at the top of data line.
7. TFT-LCD manufacturing method of array base plate according to claim 6 is characterized in that, also is formed with public electrode wire in the described step 1 simultaneously.
8. TFT-LCD manufacturing method of array base plate according to claim 6 is characterized in that, described step 2 comprises:
Using plasma strengthens chemical gaseous phase depositing process, deposits gate insulation layer, semiconductive thin film and doped semiconductor films successively; Adopt the method for magnetron sputtering or thermal evaporation, sedimentary origin leaks metallic film;
Leak coating one deck photoresist on the metallic film in described source;
Adopt the exposure of shadow tone or gray mask plate, make the complete reserve area of photoresist formation photoresist, photoresist remove zone and photoresist half reserve area fully, the complete reserve area of photoresist is corresponding to data line, source electrode and drain electrode figure region, photoresist half reserve area is corresponding to TFT channel region figure region, and photoresist is removed the zone fully corresponding to the zone beyond the above-mentioned figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is removed the photoresist in zone fully and removed the photoresist thickness attenuation of photoresist half reserve area fully;
By the first time etching technics etch away photoresist fully and remove the source in zone fully and leak metallic film, doped semiconductor films and semiconductive thin film, form the figure that comprises active layer and data line;
Photoresist by cineration technics removal photoresist half reserve area exposes this regional source and leaks metallic film;
Leak metallic film and doped semiconductor films by the source that the second time, etching technics etched away photoresist half reserve area fully, and etch away the semiconductive thin film of segment thickness, this regional semiconductive thin film is come out, form the figure that comprises source electrode, drain electrode and TFT channel region;
Peel off remaining photoresist.
9. TFT-LCD manufacturing method of array base plate according to claim 6 is characterized in that, described step 2 comprises:
Using plasma strengthens chemical gaseous phase depositing process, deposits gate insulation layer, semiconductive thin film and doped semiconductor films successively;
Adopt the normal masks plate that semiconductive thin film and doped semiconductor films are carried out composition, form the figure that comprises active layer;
Adopt the method for magnetron sputtering or thermal evaporation, metallic film is leaked in deposition one deck source;
Adopt the normal masks plate that metallic film is leaked in the source and carry out composition, form the figure that comprises data line, source electrode, drain electrode and TFT channel region.
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| CN200910079910A CN101833203A (en) | 2009-03-12 | 2009-03-12 | TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102645802A (en) * | 2011-05-06 | 2012-08-22 | 京东方科技集团股份有限公司 | TFT-LCD (thin film transistor liquid crystal display) array substrate and manufacturing and repairing methods thereof |
| CN102938382A (en) * | 2012-10-22 | 2013-02-20 | 京东方科技集团股份有限公司 | Array substrate manufacturing method, array substrate and display device |
| WO2013135125A1 (en) * | 2012-03-16 | 2013-09-19 | 京东方科技集团股份有限公司 | Tft array substrate, fabrication method thereof and display device |
| CN103995378A (en) * | 2013-12-31 | 2014-08-20 | 深圳市华星光电技术有限公司 | Method for manufacturing display device, repairing method and liquid crystal display panel |
| US9529239B2 (en) | 2013-12-31 | 2016-12-27 | Shenzhen China Star Optoelectronics Technologies Co., Ltd. | Manufacturing method and repairing method for display device as well as liquid crystal display panel |
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2009
- 2009-03-12 CN CN200910079910A patent/CN101833203A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102645802A (en) * | 2011-05-06 | 2012-08-22 | 京东方科技集团股份有限公司 | TFT-LCD (thin film transistor liquid crystal display) array substrate and manufacturing and repairing methods thereof |
| US9847354B2 (en) | 2011-05-06 | 2017-12-19 | Boe Technology Group Co., Ltd. | TFT array substrate and manufacturing and repairing methods of the same |
| WO2013135125A1 (en) * | 2012-03-16 | 2013-09-19 | 京东方科技集团股份有限公司 | Tft array substrate, fabrication method thereof and display device |
| US9240422B2 (en) | 2012-03-16 | 2016-01-19 | Boe Technology Group Co., Ltd. | TFT array subsrate, fabrication method, and display device thereof |
| CN102938382A (en) * | 2012-10-22 | 2013-02-20 | 京东方科技集团股份有限公司 | Array substrate manufacturing method, array substrate and display device |
| CN102938382B (en) * | 2012-10-22 | 2015-02-04 | 京东方科技集团股份有限公司 | Array substrate manufacturing method, array substrate and display device |
| CN103995378A (en) * | 2013-12-31 | 2014-08-20 | 深圳市华星光电技术有限公司 | Method for manufacturing display device, repairing method and liquid crystal display panel |
| CN103995378B (en) * | 2013-12-31 | 2016-10-05 | 深圳市华星光电技术有限公司 | Manufacture the method for display device and restorative procedure and display panels |
| US9529239B2 (en) | 2013-12-31 | 2016-12-27 | Shenzhen China Star Optoelectronics Technologies Co., Ltd. | Manufacturing method and repairing method for display device as well as liquid crystal display panel |
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Application publication date: 20100915 |