CN101826583A - Method for preparing patterned sapphire substrate for extension of gallium nitride-based LED - Google Patents
Method for preparing patterned sapphire substrate for extension of gallium nitride-based LED Download PDFInfo
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- CN101826583A CN101826583A CN201010153212A CN201010153212A CN101826583A CN 101826583 A CN101826583 A CN 101826583A CN 201010153212 A CN201010153212 A CN 201010153212A CN 201010153212 A CN201010153212 A CN 201010153212A CN 101826583 A CN101826583 A CN 101826583A
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Abstract
The invention discloses a method for preparing a patterned sapphire substrate for the extension of a gallium nitride-based LED, which comprises the following steps of: vapor-depositing a layer of thin film made from a low-refractive index material on the sapphire substrate by using conventional technology; preparing a mask pattern on the thin film with a photoresistor; transferring a pattern of a photosensitive resist mask onto the thin film by etching; and cleaning the substrate to remove the residual photoresistor. As threading dislocation is deflected from a vertical direction to a horizontal direction when GaN is extended and grown on the patterned substrate obtained by the method, the threading dislocation density of a GaN-based extension layer is reduced, the crystal quality of the extension layer is improved, a non-radiative recombination centre of a semiconductor luminous material is reduced, radiative recombination is enhanced and the light emitting efficiency of the LED can be improved; and the method has the advantages of easily controlled preparation process, simplicity, diversity, high rate of finished products and production cost reduction.
Description
Technical field
The present invention relates to a kind of light-emitting diode (LED) epitaxial substrate and preparation method thereof, especially a kind of extension of gallium nitride-based LED method for preparing patterned sapphire substrate.
Background technology
The gallium nitride based light emitting diode of widespread usage mainly is that heteroepitaxy is on smooth substrate in the world now, wherein substrate can be sapphire, carborundum or silicon, this structure major defect is: 1, owing to there is not the backing material of lattice match, gallium nitride based light emitting diode all is that heteroepitaxial growth is on substrates such as sapphire, carborundum or silicon, the difference of lattice constant makes epitaxial material exist a lot of dislocations, these drawbacks limit the internal quantum efficiency of light-emitting diode; 2, light is when epitaxial loayer enters substrate, because the interface is more smooth, the incidence angle of light is smaller, and gallium nitride and refractive index of substrate are more or less the same, cause reflectivity low, most of light can escape into substrate, can not return epitaxial loayer by usable reflection, greatly reduces the light extraction efficiency of gallium nitride based light emitting diode.
In order to improve the light extraction efficiency of gallium nitride based light emitting diode, existing multinomial work launches around patterned substrate, mainly is by the etching sapphire, makes graph substrate.It as publication number 1020080087406,1020060127623 Korean Patent, on sapphire, make the hemisphere mask, obtain hemispheric pattern at the etching sapphire, though the said method part has reduced epitaxy defect and has improved light extraction efficiency, but still there is following shortcoming: because sapphire refractive index is 1.8, refractive index ratio with gallium nitride is more close, when light when epitaxial loayer enters patterned substrate, it is not obvious that reflectivity improves, and falls flat for the improvement of gallium nitride based light emitting diode light emission rate.
Because Sapphire Substrate is harder, manufacturing process is very high to equipment and technological requirement, particularly sapphire dry etching, need helium cooling system, highdensity plasma, common etching apparatus can not meet the demands, same wet etching need at high temperature use strong acid, the difficult control of manufacturing process, thus cause rate of finished products low, increased production cost.
Summary of the invention
The object of the present invention is to provide a kind of preparation method who improves the gallium nitride based light emitting diode epitaxial substrate of light extraction efficiency.
Technical scheme of the present invention is: a kind of extension of gallium nitride-based LED method for preparing patterned sapphire substrate, and step is: a deposits the thin-film material of layer of ZnO on substrate; B prepares mask graph with photoresistance on described film; C is by etching, with the figure transfer of photoresist mask to described film; D cleans substrate, removes residual photoresistor.Substrate is a sapphire.Substrate comprises the figure on the substrate, and figure is approximate hemisphere, taper shape or truncated cone-shaped, figure diameter of a circle---5 μ m highly are 0.5---the 3 μ m that are 1 that go to the bottom, and the figure spacing is 1---5 μ m.Film is a zinc oxide material, and film thickness is only 0.5---between the 1.5 μ m, film refractive index is less than 2.5.The method for manufacturing thin film of step a is a kind of in MOCVD (metal organic chemical vapor deposition), PECVD (plasma enhanced chemical vapor deposition), electron beam evaporation, sputter or the collosol and gel.The method that prepare image of step b on film made etching mask for even glue, photoetching, development, hot plate baking.Step c is by dry etching or wet etching figure.
The invention has the advantages that: the film of deposition low-index material on substrate, its hardness is low, and preparation process is controlled easily, and production equipment and process conditions are not had specific (special) requirements, and the preparation method is simply various, and the rate of finished products height has reduced production cost.With the substrate figure of refractive index less than the preparation of 2.5 thin-film material, because figure is circular cone or semicircle, when light entered substrate from epitaxial loayer, incident angle can increase on the one hand; On the other hand, the refractive index ratio of figure is lower, and reflectivity can improve greatly, and more light has increased the extraction efficiency of light from the transparency electrode outgoing.By actual detected, adopt gallium nitride based light emitting diode encapsulation back brightness provided by the invention to improve 30%.
Description of drawings
Fig. 1 is the schematic diagram of a kind of extension of gallium nitride-based LED of the present invention with deposition layer of ZnO material film on the method for preparing patterned sapphire substrate substrate;
Fig. 2 is the graph substrate elevation of a kind of extension of gallium nitride-based LED of the present invention with the method for preparing patterned sapphire substrate gallium nitride based light emitting diode;
Fig. 3 is the graph substrate cutaway view of a kind of extension of gallium nitride-based LED of the present invention with the method for preparing patterned sapphire substrate gallium nitride based light emitting diode;
The X-ray diffraction peak spectrum of Fig. 4 growing GaN sample (002) on the graph substrate that general substrate and the embodiment of the invention 1 provide; Wherein "----" represents the general substrate sample, "-" representative graph substrate sample provided by the invention.
Embodiment
A kind of extension of gallium nitride-based LED method for preparing patterned sapphire substrate, its step:
A utilizes the ZnO film of method growth one deck 0.6 μ m of chemical vapour deposition (CVD) on 2 inches c surface sapphire substrate, as shown in Figure 1;
B prepares hemispherical mask with photoresistance on ZnO film;
C transfers to hemispheric photoresistance mask graph on the ZnO film by dry etching, forms hemispheric ZnO on Sapphire Substrate, and interhemispheric ZnO material etching is clean, exposes Sapphire Substrate;
D cleans Sapphire Substrate, prepares the sapphire graphical substrate shown in Fig. 2,3.
The figure of the gallium nitride based light emitting diode epitaxial substrate that forms by the above-mentioned steps diameter of a circle of going to the bottom is 1 μ m to 5 μ m, highly is 0.5 μ m to 3 μ m, and the figure spacing is 1 μ m to 5 μ m.
As above the dimension of picture of gallium nitride based light emitting diode epitaxial substrate can be because of the equipment difference that is adopted among the embodiment, and final shape, size have difference.
The X-ray diffraction peak collection of illustrative plates of GaN sample (0002) face shown in Figure 4, the halfwidth of Grown GaN sample diffraction maximum is less than the halfwidth of the sample diffraction maximum of growing on the general substrate on this graph substrate, and this shows that crystal mass is improved.
Claims (9)
1. extension of gallium nitride-based LED method for preparing patterned sapphire substrate, step is: a deposits the thin-film material of layer of ZnO on substrate; B prepares mask graph with photoresistance on described film; C is by etching, with the figure transfer of photoresist mask to described film; D cleans substrate, removes residual photoresistor.
2. according to the described extension of gallium nitride-based LED method for preparing patterned sapphire substrate of claim 1, it is characterized in that: described substrate is a sapphire.
3. according to the described extension of gallium nitride-based LED method for preparing patterned sapphire substrate of claim 1, it is characterized in that: described film is a zinc oxide material.
4. according to claim 1 or 3 described extension of gallium nitride-based LED method for preparing patterned sapphire substrate, it is characterized in that: described film thickness is only between 0.5-1.5 μ m.
5. according to claim 1 or 2 described extension of gallium nitride-based LED method for preparing patterned sapphire substrate, it is characterized in that: described substrate comprises the figure on the substrate, figure is hemisphere, taper shape or truncated cone-shaped taper shape, the figure diameter of a circle of going to the bottom is 1-5 μ m, highly be 0.5-3 μ m, the figure spacing is 1-5 μ m.
6. according to claim 1 or 3 described extension of gallium nitride-based LED method for preparing patterned sapphire substrate, it is characterized in that: described film refractive index is less than 2.5.
7. according to the described extension of gallium nitride-based LED method for preparing patterned sapphire substrate of claim 1, it is characterized in that: the method for manufacturing thin film of described step a is a kind of in MOCVD, PECVD, electron beam evaporation, sputter or the collosol and gel.
8. according to the described extension of gallium nitride-based LED method for preparing patterned sapphire substrate of claim 1, it is characterized in that: the method that prepare image of described step b on film made etching mask for even glue, photoetching, development, hot plate baking.
9. according to the described extension of gallium nitride-based LED method for preparing patterned sapphire substrate of claim 1, it is characterized in that: described step c is by dry etching or wet etching figure.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102169936A (en) * | 2011-02-16 | 2011-08-31 | 亚威朗光电(中国)有限公司 | Graphical substrate and light-emitting diode (LED) chip |
| CN102181824A (en) * | 2011-01-27 | 2011-09-14 | 广东银雨芯片半导体有限公司 | Process and structure of patterned substrate and light emitting diode chip |
| CN103050596A (en) * | 2011-10-17 | 2013-04-17 | 大连美明外延片科技有限公司 | Light emitting diode provided with patterned substrate |
| CN104134733A (en) * | 2014-03-21 | 2014-11-05 | 浙江东晶博蓝特光电有限公司 | Patterned substrate used for growing semi-conductor film and manufacturing method thereof |
| CN104319318A (en) * | 2014-10-27 | 2015-01-28 | 中国科学院半导体研究所 | Preparation method for LED patterned substrate with low-refractive-index material |
| CN105304775A (en) * | 2015-11-16 | 2016-02-03 | 河北工业大学 | Preparation method of LED patterned substrate with low refractive index micro-nano structure layer |
| CN107731660A (en) * | 2017-09-27 | 2018-02-23 | 闽南师范大学 | A kind of manufacture of semiconductor figure substrate and the method for extension |
| CN111833268A (en) * | 2020-07-10 | 2020-10-27 | 中国海洋大学 | Underwater image enhancement method for generating countermeasure network based on conditions |
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| US20060118803A1 (en) * | 2004-12-08 | 2006-06-08 | Samsung Electronics Co., Ltd. | Semiconductor light emitting diode having high efficiency and method of manufacturing the same |
| CN1812144A (en) * | 2004-12-08 | 2006-08-02 | 三星电机株式会社 | Semiconductor light emitting device having textured structure and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102181824A (en) * | 2011-01-27 | 2011-09-14 | 广东银雨芯片半导体有限公司 | Process and structure of patterned substrate and light emitting diode chip |
| CN102169936A (en) * | 2011-02-16 | 2011-08-31 | 亚威朗光电(中国)有限公司 | Graphical substrate and light-emitting diode (LED) chip |
| CN103050596A (en) * | 2011-10-17 | 2013-04-17 | 大连美明外延片科技有限公司 | Light emitting diode provided with patterned substrate |
| CN104134733A (en) * | 2014-03-21 | 2014-11-05 | 浙江东晶博蓝特光电有限公司 | Patterned substrate used for growing semi-conductor film and manufacturing method thereof |
| CN104134733B (en) * | 2014-03-21 | 2017-03-22 | 浙江东晶博蓝特光电有限公司 | Manufacturing method of patterned substrate used for growing semi-conductor film |
| CN104319318A (en) * | 2014-10-27 | 2015-01-28 | 中国科学院半导体研究所 | Preparation method for LED patterned substrate with low-refractive-index material |
| CN105304775A (en) * | 2015-11-16 | 2016-02-03 | 河北工业大学 | Preparation method of LED patterned substrate with low refractive index micro-nano structure layer |
| CN105304775B (en) * | 2015-11-16 | 2017-12-15 | 河北工业大学 | The preparation method of LED patterned substrates with low-refraction micro-nano structure layer |
| CN107731660A (en) * | 2017-09-27 | 2018-02-23 | 闽南师范大学 | A kind of manufacture of semiconductor figure substrate and the method for extension |
| CN111833268A (en) * | 2020-07-10 | 2020-10-27 | 中国海洋大学 | Underwater image enhancement method for generating countermeasure network based on conditions |
| CN111833268B (en) * | 2020-07-10 | 2023-09-26 | 中国海洋大学 | Underwater image enhancement method based on condition generation countermeasure network |
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Application publication date: 20100908 |