CN101826367A - Method and device for monitoring reliability of semiconductor storage device - Google Patents
Method and device for monitoring reliability of semiconductor storage device Download PDFInfo
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- CN101826367A CN101826367A CN200910146413A CN200910146413A CN101826367A CN 101826367 A CN101826367 A CN 101826367A CN 200910146413 A CN200910146413 A CN 200910146413A CN 200910146413 A CN200910146413 A CN 200910146413A CN 101826367 A CN101826367 A CN 101826367A
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Abstract
The invention provides a method and device for monitoring the reliability of a semiconductor storage device and also provides a SMART method for monitoring the reliability of the semiconductor storage device. The semiconductor storage device comprises a semiconductor storage medium. The SMART method for monitoring the reliability of the semiconductor storage device comprises the following steps: executing SMART command, obtaining the erase/write information of the semiconductor storage medium; comparing the erase/write information with a preset lifetime threshold; and determining the reliability of the semiconductor storage device according to the comparison result. By monitoring the erase/write information, the reliability of the semiconductor storage device can be effectively monitored.
Description
Technical field
The application relates to technical field of information storage, more particularly, relates to the monitoring reliability of semiconductor memory apparatus.
Background technology
Along with developing rapidly of computer industry, the capacity of memory device (for example hard disk etc.) constantly promotes, the damage of memory device will bring tremendous loss, therefore, need provide the method for a kind of reliability of monitoring memory device to guarantee that memory device can be safely, worked reliably.
Existing memory device monitoring technology mainly proposes at traditional mechanical type hard disk, and it is mainly monitored mechanical parts such as the magnetic head of mechanical type hard disk, disk, motor, circuit.Yet for present popular semiconductor memory apparatus (electronic type hard disk), the traditional monitoring technology can not effectively be monitored the reliability of semiconductor memory apparatus.
Summary of the invention
The application aims to provide a kind of especially method of reliability of semiconductor storage device of semiconductor memory apparatus of monitoring, and can effectively monitor the reliability of semiconductor memory apparatus.
A kind of SMART method of monitoring reliability of semiconductor storage device is provided according to an aspect of the present invention, wherein, semiconductor memory apparatus comprises semiconductor storage medium, and this method comprises: carry out the SMART order, obtain the erase of semiconductor storage medium; Erase and preset lifetime threshold are compared; And, determine the reliability of semiconductor memory apparatus according to result relatively.
According to a kind of embodiment, semiconductor storage medium comprises a plurality of physical blocks, and erase can comprise maximal value or the mean value in the erasable number of times of each physical block of semiconductor storage medium, and erase is recorded in the SMART daily record.
According to another kind of embodiment, lifetime threshold can comprise the maximum erasable frequency threshold value or the average erasable frequency threshold value of physical block, and lifetime threshold can be stored in the SMART daily record in advance.
According to another kind of embodiment, after a physical block is carried out erasable operation, can upgrade the erasable number of times of this physical block, and the erasable number of times that will upgrade writes the SMART daily record.
According to another kind of embodiment, lifetime threshold can comprise at least one other threshold value of level, and wherein, the result that can compare respectively according to erase and other threshold value of at least one grade determines the alarm condition grade of semiconductor memory apparatus.
According to another kind of embodiment, monitoring method further comprises: according to the alarm condition grade of semiconductor memory apparatus, by SMART order output alarm state.
A kind of method of monitoring reliability of semiconductor storage device is provided according to another aspect of the present invention, and semiconductor memory apparatus comprises semiconductor storage medium, and this method comprises: the erase of obtaining semiconductor storage medium; Erase and preset lifetime threshold are compared; And, determine the reliability of semiconductor memory apparatus according to result relatively.
According to a kind of embodiment, lifetime threshold can comprise at least one other threshold value of level, wherein, according to the result that erase and other threshold value of at least one grade compare respectively, determines the alarm condition grade of semiconductor memory apparatus.
According to another kind of embodiment, semiconductor storage medium comprises a plurality of physical blocks, erase can comprise maximal value or the mean value in the erasable number of times of each physical block of semiconductor storage medium, and lifetime threshold can comprise the maximum erasable frequency threshold value or the average erasable frequency threshold value of physical block.
A kind of semiconductor memory apparatus is provided according to another aspect of the present invention, and this semiconductor memory apparatus comprises semiconductor storage medium and control module, and this control module comprises: acquisition module, and it obtains the erase of semiconductor storage medium; Comparison module, it compares erase and preset lifetime threshold; Determination module, it determines the reliability of semiconductor memory apparatus according to result relatively.
Because the existing monitoring reliability technology that is used for the mechanical type hard disk does not relate to the monitoring and the judgement of the erasable number of times of physical block, therefore can not provide the monitoring information of the reliability of semiconductor memory apparatus according to the erasable number of times of the physical block in the semiconductor storage medium.In this application, by erasable number of times is introduced the monitoring reliability technology, then can effectively monitor the reliability of semiconductor memory apparatus.
Description of drawings
Fig. 1 shows the block scheme according to the semiconductor memory apparatus of first embodiment of the application's a aspect;
Fig. 2 shows the block scheme according to the semiconductor memory apparatus of second embodiment of the application's a aspect;
Fig. 3 shows the method flow diagram according to the monitoring reliability of semiconductor storage device of first embodiment of another aspect of the application;
Fig. 4 shows the method flow diagram according to the monitoring reliability of semiconductor storage device of second embodiment of another aspect of the application;
Fig. 5 shows the process flow diagram according to the 3rd embodiment of the method for the monitoring reliability of semiconductor storage device of another aspect of the application;
Fig. 6 shows the application system that realizes the method for the monitoring reliability of semiconductor storage device that the application proposes by improved SMART technology;
Fig. 7 is the synoptic diagram according to the SMART daily record among the embodiment of the application's improved SMART technology;
Fig. 8 is the synoptic diagram according to the SMART daily record among another embodiment of the application's improved SMART technology;
Fig. 9 is the synoptic diagram according to the SMART state return command among the embodiment of the application's improved SMART technology; And
Figure 10 is the synoptic diagram of the SMART state return results among Fig. 9.
Embodiment
Specifically describe the semiconductor memory apparatus that can monitor self reliability according to the application and monitoring method thereof below in conjunction with accompanying drawing.
Fig. 1 shows first embodiment according to the semiconductor memory apparatus of the application's a aspect, and this semiconductor memory apparatus 1 comprises control module 11 and semiconductor storage medium 12, and semiconductor storage medium 12 can comprise one or more pieces flash medias 120.Wherein, every flash media comprises a plurality of physical blocks 121.
We are the erasable number of times that the performed wiping of certain physical block or the number of times write is called this physical block, and usually, mainly decided by the maximum erasable number of times of this physical block the serviceable life of physical block.In case surpassed maximum erasable number of times, the reliability of this physical block will reduce.The semiconductor memory apparatus that the application provides can be monitored the erasable number of times of each physical block in all flash medias 120 in self the semiconductor storage medium 12, thereby in time find and report the situation of the physical block that maximum erasable number of times (serviceable life) occurred having surpassed, so that the timely Backup Data of user or change memory storage.
As shown in Figure 1, the control module 11 according to first embodiment of the application's semiconductor memory apparatus comprises acquisition module 111, comparison module 112, and determination module 113.Acquisition module 111 can obtain the erase of each physical block in all flash medias 120.According to an embodiment, erase comprises the maximal value in the erasable number of times of each physical block, and wherein, maximal value is meant that the erasable number of times to all physical blocks of semiconductor storage medium compares and the greatest measure that obtains.According to another embodiment, erase comprises the mean value of the erasable number of times of each physical block, and wherein, mean value is meant that the erasable number of times to all physical blocks of semiconductor storage medium averages and the mean values that obtains.
Alternatively, semiconductor memory apparatus according to the application may further include the reminding module (not shown), after determination module 113 determines that semiconductor storage medium is in alarm condition, reminding module output warning message reduces with the reliability of prompting user medium storage, need carry out data backup.
One of ordinary skill in the art will appreciate that, semiconductor memory apparatus among the application can comprise solid state hard disc, flash disk, flash card, for example SmartMedia (SM card), Compact Flash (CF card), MultiMediaCard (mmc card), Secure Digital (SD card), Memory Stick (memory stick) etc.
Fig. 2 shows second embodiment according to the semiconductor memory apparatus of the application's a aspect.As shown in Figure 2, compare, further comprise logging modle 1111 and computing module 1112 according to the acquisition module in the semiconductor memory apparatus of present embodiment 111 with semiconductor memory apparatus as shown in Figure 1.Logging modle 1111 can write down the erasable number of times of each physical block in the every flash media.Realize the mode of the erasable number of times of each physical block of above-mentioned record, for example, can set up erasable number of times record sheet, and the initial erasable number of times that each physical block is set is " 0 ", after certain physical block is carried out the operation of once wiping or writing, then upgrades the erasable number of times of this physical block, promptly, the erasable number of times of this physical block is increased " 1 ", like this, just can in this erasable number of times record sheet, write down the erasable number of times of each physical block.
The 3rd embodiment according to the semiconductor memory apparatus of the application's a aspect, a plurality of other lifetime threshold of level can be set in comparison module, and according to erase and a plurality of grades of results that other threshold value compares respectively, determine the alarm condition grade of semiconductor memory apparatus, thereby realize the reliability of semiconductor memory apparatus is carried out classifying alarm.
Be example with the two-stage warning below, present embodiment is described.In the present embodiment, comparison module has preestablished two other lifetime threshold of level.For example, be 10,000 times semiconductor memory apparatus for the physical block maximum life of semiconductor storage medium, can set first threshold is that 10000, the second threshold values are 8000.
If the erase of the semiconductor storage medium that comparison module obtains is lower than second threshold value 80,000 times, then determination module 113 determines that the state value of semiconductor memory apparatus is a safety, that is, semiconductor memory apparatus 1 is in reliable state.If the erase of the semiconductor storage medium that comparison module obtains is in first threshold 80,000 times between second threshold value 100,000 times, then determination module 113 determines that the state value of semiconductor memory apparatus is that secondary is reported to the police, that is, semiconductor memory apparatus 1 is in common alarm condition.If the erase of the semiconductor storage medium that comparison module obtains surpasses second threshold value 100,000 times, then determination module 113 determines that the state value of semiconductor memory apparatus is that one-level is reported to the police, that is, semiconductor memory apparatus is in the grave warning state.
Like this,, can make the user can grasp the residing state of semiconductor memory apparatus more accurately, thereby judge whether to carry out data backup according to the rank of reporting to the police by the mode of grading forewarning system.
It will be understood by those skilled in the art that it only is for purposes of illustration that the above secondary enumerated is reported to the police, rather than to the application's restriction, can only comprise that according to the application's pick-up unit one-level reports to the police, also can comprise three grades or more multi-level warning.
Fig. 3 has shown the process flow diagram according to the method for the application's monitoring reliability of semiconductor storage device.As shown in Figure 3, the method for monitoring reliability of semiconductor storage device may further comprise the steps:
Step S301 obtains the erase of semiconductor memory apparatus;
Among the step S302, erase and the predefined lifetime threshold of obtaining compared;
Among the step S303,, determine the reliability of semiconductor memory apparatus according to result relatively.
According to a kind of embodiment, semiconductor storage medium comprises a plurality of physical blocks.Erase comprises maximal value or the mean value in the erasable number of times of each physical block of semiconductor storage medium.Lifetime threshold comprises the maximum erasable frequency threshold value or the average erasable frequency threshold value of physical block.Alternatively, after a physical block is carried out erasable operation, upgrade the erasable number of times of this physical block.
According to embodiment in another, lifetime threshold comprises at least one other threshold value of level, and the result that can compare respectively according to erase and other threshold value of at least one grade, determines the alarm condition grade of semiconductor memory apparatus.Alternatively, according to the alarm condition grade of semiconductor memory apparatus, output alarm state.
The application has further proposed a kind of method that realizes monitoring reliability of semiconductor storage device by improved SMART technology.
SMART (" Self-Monitoring, Analysis and Reporting Technology ", self-monitoring, analysis and reporting techniques) is the technology that hard disk failure is detected and realizes comparatively safe data protection.Traditional SMART technology proposes at the mechanical type hard disk, and the object of technical monitoring comprises mechanical parts such as magnetic head, disk, motor, circuit.And can detect the erasable number of times of semiconductor memory apparatus according to the improved SMART technology that the application proposed, and can in time provide warning message, so that the user in time changes semiconductor memory apparatus or backs up the wherein data of storage, avoid taking place heavy losses such as loss of data.
As shown in Figure 4, the SMART method according to the application's monitoring reliability of semiconductor storage device may further comprise the steps:
In step 401, carry out the SMART order, obtain the erase of the semiconductor storage medium in the semiconductor memory apparatus; In step 402, erase and preset lifetime threshold are compared; In step 403, and, determine the reliability of semiconductor memory apparatus according to result relatively.
According to a kind of embodiment, semiconductor storage medium comprises a plurality of physical blocks.Erase comprises maximal value or the mean value in the erasable number of times of each physical block of semiconductor storage medium, and erase is recorded in the SMART daily record.Lifetime threshold comprises the maximum erasable frequency threshold value or the average erasable frequency threshold value of physical block, and lifetime threshold is stored in the SMART daily record in advance.Alternatively, after a physical block is carried out erasable operation, upgrade the erasable number of times of this physical block, and the erasable number of times that will upgrade writes the SMART daily record.
According to another kind of embodiment, lifetime threshold comprises at least one other threshold value of level, and the result that can compare respectively according to erase and other threshold value of at least one grade, determines the alarm condition grade of semiconductor memory apparatus.Alternatively, according to the alarm condition grade of semiconductor memory apparatus, can order the output alarm state by SMART.
Fig. 5 has shown the SMART method according to the monitoring reliability of semiconductor storage device with two-stage warning.As shown in Figure 5, in step 501, carry out the SMART order, obtain the erase of the semiconductor storage medium in the semiconductor memory apparatus; In step 502, will compare by erase and the presetting first threshold that the SMART order is obtained; When erase during more than or equal to first threshold, determine that in step 503 semiconductor memory apparatus is in the one-level alarm condition, otherwise, enter step 504; In step 504, will compare by erase and second threshold value that SMART order is obtained, when erase during more than or equal to second threshold value, definite semiconductor memory apparatus is in the secondary alarm condition in step 505; Otherwise, enter step 506, and definite semiconductor memory apparatus is in reliable state.
Specify the method that the SMART technology is come monitoring reliability of semiconductor storage device of passing through below in conjunction with application system shown in Figure 6 according to the application.As shown in Figure 6, this system comprises main frame 2 and the semiconductor memory apparatus 1 according to the application that links to each other with main frame 2.In the present embodiment, semiconductor memory apparatus 1 may further include buffer memory 13 to improve and the mutual speed of main frame.Wherein, buffer memory 13 can be the random access memory of control module 11 inside of semiconductor memory apparatus 1, also can be the Synchronous Dynamic Random Access Memory of control module 11 outsides.
In present embodiment, the control module 11 of semiconductor memory apparatus 1 records the erase of semiconductor storage medium 12 and the lifetime threshold that sets in advance in the SMART daily record.The SMART daily record is a standard of appointing in advance, and semiconductor memory apparatus 1 can be according to this standard storage information.The SMART log store is in a specific region of semiconductor storage medium 12, and main frame 1 can read the SMART daily record by ordering to semiconductor memory apparatus 2 transmission SMART READ LOG.
Show SMART daily record among the application's the embodiment at Fig. 7, this SMART daily record specifically comprises side-play amount (Offset), type (Type) and content parts such as (Content), wherein, the 0-7 byte records version number, the 8-15 byte records erase of semiconductor storage medium, comprise the maximum erasable number of times (Max Lifetime for physical block) in all physical blocks of 8-11 byte records and the average erasable number of times (Average Lifetime for all physical block) of 12-15 byte records, and the space of 16-511 byte for reserving.
In another embodiment, as shown in Figure 8, the erase of physical block also can be recorded in the same SMART daily record with the number of times that powers on (Lifetime Power-On Resets) of semiconductor memory apparatus 1, wherein, the 0-7 byte records version number, the 8-15 byte records number of times that powers on of semiconductor memory apparatus 2 (Lifetime Power-On Resets), maximum erasable number of times in all physical blocks of 16-19 byte records (Max Lifetime for physical block), the 20-23 byte records average erasable number of times (Average Lifetime for all physical block), the space of 24-511 byte for reserving.
In one embodiment, the erase that can when upgrading the erase of semiconductor storage medium 12, write down in the real-time update SMART daily record.In another embodiment, also can be when semiconductor memory apparatus 1 sends the SMART order at main frame 2, obtain the erase of semiconductor storage medium by control module 11 after, upgrade the erase of the semiconductor storage medium that writes down in the SMART daily record.
In the above-described embodiment, obtain the erasable number of times of all physical blocks of semiconductor memory apparatus 2 for ease of main frame 1, control module 11 can read the erasable number of times record of all physical blocks of record in the semiconductor storage medium 12, and the erasable number of times of all physical blocks is recorded in the SMART daily record.Like this, main frame 2 can read the SMART daily record by send SMART READ LOG order to semiconductor memory apparatus 1, thereby obtains the erasable number of times of all physical blocks.
When the erasable number of times of maximum greater than the maximum life threshold value, and/or average erasable number of times is during greater than the mean lifetime threshold value, control module 21 state values are set to for example alarm condition.Like this, main frame 2 can require the return state value to semiconductor memory apparatus 1 input SMART state return signal (sending SMART RETURN STATUS order), and then control module 11 returns to main frame 2 with state value, and main frame 2 can be according to the state value warning.
Alternatively, a plurality of other lifetime threshold of level can be set, and according to erase and a plurality of grades of results that other threshold value compares respectively, determine the alarm condition grade of semiconductor memory apparatus, thereby realize the reliability of semiconductor memory apparatus is carried out classifying alarm.For example, be 10,000 times semiconductor memory apparatus for the physical block maximum life of semiconductor storage medium, can set the first maximum life threshold value is that 10000, the second maximum life threshold values are 8000.Be lower than second threshold value 80,000 times if read the maximum erasable number of times of the physical block that writes down in the SMART daily record by SMART READ LOG order, determine that then the state value of semiconductor memory apparatus is first state, that is, semiconductor memory apparatus 1 is in reliable state.If the maximum erasable number of times that reads the physical block that writes down in the SMART daily record by SMART READ LOG order is in first threshold 80,000 times between second threshold value 100,000 times, the state value of then determining semiconductor memory apparatus is second state, that is, semiconductor memory apparatus 1 is in common alarm condition.Surpass second threshold value 100,000 times if read the maximum erasable number of times of the physical block that writes down in the SMART daily record by SMART READ LOG order, the state value of then determining semiconductor memory apparatus is the third state, that is, semiconductor memory apparatus is in the grave warning state.
Like this,, can make the user can grasp the residing state of semiconductor memory apparatus more accurately, thereby judge whether to carry out data backup according to the rank of reporting to the police by the mode of grading forewarning system.
It will be understood by those skilled in the art that it only is for purposes of illustration that the above secondary enumerated is reported to the police, rather than to the application's restriction, can only comprise that according to the application's pick-up unit one-level reports to the police, also can comprise three grades or more multi-level warning.
After control module 11 was provided with state value, main frame 2 can send SMART RETURN STATUS order, requires control module 11 to return set state value.Fig. 9 shows the SMART RETURN STATUS command format among the application's the embodiment, wherein, Feature representation feature value, Count represents quantity (specifically can be sector number), LBA presentation logic address, it comprises the state value of acquiescence, the Device indication equipment, and last and Command forms a complete command format.
Figure 10 shows SMART RETURN STATUS order return results, wherein, Error represents error message (being the concrete error category that occurs in the command execution process), Count represents quantity (specifically can be sector number), LBA presentation logic address, it comprises the state value that returns, among this embodiment, the state value that main frame 2 obtains returning is the 2CF4h of 23-8 bit part, and expression semiconductor memory apparatus 1 is in the grave warning state.Device indication equipment, Status are represented state (being specially the state of command execution), and among this embodiment, the state of command execution is smooth completion status (being 50h).
After main frame 2 gets access to state value, can operate accordingly according to different state values.For example, when the state value that returns is 0xC24F, but main frame 2 display safety information; When the state value that returns is 0x24CF or 0x2CF4, but main frame 1 warning.For example, on screen, show " WARNING:IMMEDIATLY BACKUP YOUR DATA AND REPLACE YOUR HARD DISK DRIVE; A FAILURE MAY BE IMMINENT " (warning: the data that back up you are at once changed hard disk drive simultaneously, have wrong the appearance).
Method by the monitoring reliability of semiconductor storage device that the application proposed, by erase being introduced the monitoring reliability technology, then can monitor semiconductor memory apparatus 2 and whether be in reliable state, when semiconductor memory apparatus 2 is in insecure state, can provide warning message, so that the user in time changes or repairs semiconductor memory apparatus 2, avoid taking place heavy losses such as loss of data.
One of ordinary skill in the art will appreciate that all or part of step that realizes in the foregoing description method is to finish by the relevant hardware of programmed instruction, this program can be stored in the computer read/write memory medium, wherein, storage medium comprises tape, disk, CD, magneto-optic disk, ROM, PROM, VCD, DVD etc.
The above only is the application's preferred embodiment, not in order to restriction the application, all in the application spirit and principle within done any modification, be equal to replacement etc., all should be included within the application's the protection domain.
Claims (10)
1. the SMART method of a monitoring reliability of semiconductor storage device, described semiconductor memory apparatus comprises semiconductor storage medium, it is characterized in that, described method comprises:
Carry out the SMART order, obtain the erase of semiconductor storage medium;
Described erase and preset lifetime threshold are compared; And
According to the result of described comparison, determine the reliability of described semiconductor memory apparatus.
2. SMART method according to claim 1, wherein, described semiconductor storage medium comprises a plurality of physical blocks, it is characterized in that, described erase comprises maximal value or the mean value in the erasable number of times of each physical block of described semiconductor storage medium, and described erase is recorded in the SMART daily record.
3. SMART method according to claim 2 is characterized in that, described lifetime threshold comprises the maximum erasable frequency threshold value or the average erasable frequency threshold value of physical block, and described lifetime threshold is stored in the described SMART daily record in advance.
4. SMART method according to claim 3 is characterized in that, after a physical block is carried out erasable operation, upgrade the erasable number of times of this physical block, and the erasable number of times that will upgrade writes the SMART daily record.
5. according to each described SMART method among the claim 1-4, it is characterized in that, described lifetime threshold comprises at least one other threshold value of level, wherein, described result according to described comparison, the step of determining the reliability of described semiconductor memory apparatus comprises, according to the result that described erase and other threshold value of described at least one grade compare respectively, determines the alarm condition grade of described semiconductor memory apparatus.
6. SMART method as claimed in claim 5 is characterized in that, described monitoring method further comprises: according to the alarm condition grade of described semiconductor memory apparatus, by the described alarm condition of SMART order output.
7. the method for a monitoring reliability of semiconductor storage device, described semiconductor memory apparatus comprises semiconductor storage medium, it is characterized in that, described method comprises:
Obtain the erase of semiconductor storage medium;
Described erase and preset lifetime threshold are compared; And
According to the result of described comparison, determine the reliability of described semiconductor memory apparatus.
8. monitoring method according to claim 7, it is characterized in that, described lifetime threshold comprises at least one other threshold value of level, wherein, described result according to described comparison, the step of determining the reliability of described semiconductor memory apparatus comprises, according to the result that described erase and other threshold value of described at least one grade compare respectively, determines the alarm condition grade of described semiconductor memory apparatus.
9. according to each described monitoring method among the claim 7-8, wherein, described semiconductor storage medium comprises a plurality of physical blocks, it is characterized in that, described erase comprises maximal value or the mean value in the erasable number of times of each physical block of described semiconductor storage medium, and described lifetime threshold comprises the maximum erasable frequency threshold value or the average erasable frequency threshold value of physical block.
10. semiconductor memory apparatus, described semiconductor memory apparatus comprises semiconductor storage medium and control module, it is characterized in that, described control module comprises:
Acquisition module, it obtains the erase of semiconductor storage medium;
Comparison module, it compares described erase and preset lifetime threshold;
Determination module, it determines the reliability of described semiconductor memory apparatus according to the result of described comparison.
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| CN106779008A (en) * | 2015-11-23 | 2017-05-31 | 杭州海康威视数字技术股份有限公司 | SD card, video camera and SD card reliability early warning system |
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