CN101825823A - Pixel structure and alignment mark - Google Patents
Pixel structure and alignment mark Download PDFInfo
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- CN101825823A CN101825823A CN 201010153270 CN201010153270A CN101825823A CN 101825823 A CN101825823 A CN 101825823A CN 201010153270 CN201010153270 CN 201010153270 CN 201010153270 A CN201010153270 A CN 201010153270A CN 101825823 A CN101825823 A CN 101825823A
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Abstract
The invention discloses a pixel structure and an alignment mark. The pixel structure comprises an active component, a capacitive lower electrode, a capacitive upper electrode, a protective layer, a colored filter film and a pixel electrode. The capacitive lower electrode is provided with an opening. The capacitive upper electrode is positioned above the capacitive lower electrode and electrically connected with the active component. The protective layer covers the active component, the capacitive lower electrode and the capacitive upper electrode. The colored filter film is arranged on the protective layer to cover the active component, the capacitive lower electrode and the capacitive upper electrode, wherein the protective layer and the colored filter film have a contact window, and the contact window is positioned above the opening and exposes a partial area of the capacitive upper electrode. The pixel electrode is arranged on the colored filter film and electrically connected with the capacitive upper electrode through the contact window, wherein the side wall of the contact window is positioned between the side wall of the opening and the outer edge of the capacitive upper electrode.
Description
Technical field
The invention relates to a kind of dot structure and alignment mark, and particularly relevant for a kind of dot structure and alignment mark that is easy to detect mis-alignment (mis-alignment).
Background technology
Along with showing being showing improvement or progress day by day of science and technology, people can make life convenient more by the auxiliary of display, and for asking light, the thin characteristic of display, (flat panel display FPD) becomes present main flow to impel flat-panel screens.In many flat-panel screens, (liquid crystal display LCD) has advantageous characteristic such as high spatial utilization ratio, low consumpting power, radiationless and low electromagnetic interference (EMI) to LCD, and therefore, LCD is very popular.
In general LCD, the active assembly array substrate (COA) that is integrated with colored filter film has belonged to present main flow with the active assembly array substrate (BOA) that is integrated with black matrix.With regard to existing C OA substrate or BOA substrate, the colored filter film on same substrate and its mis-alignment problem (mis-alignment issue) between film (being the patterned film in the active assembly array) down can have influence on display quality and product percent of pass usually.Therefore, how to determine the problem whether mis-alignment is arranged apace, and the degree of judging mis-alignment being whether within permissible range, is one of problem of paying close attention to of present developer.
Summary of the invention
The invention provides a kind of dot structure, whether the degree that helps to detect apace the mis-alignment at capacitor regions place exceeds permissible range.
The present invention provides a kind of alignment mark in addition, and whether the degree that helps to detect mis-alignment apace exceeds permissible range.
The present invention proposes a kind of dot structure, and it comprises driving component, capacitor lower electrode, electric capacity top electrode, protective seam, colored filter film and pixel electrode.Capacitor lower electrode has opening.The electric capacity top electrode is positioned at the capacitor lower electrode top, and electrically connects with driving component.Protective seam covers driving component, capacitor lower electrode and electric capacity top electrode.Colored filter film is disposed on the protective seam to cover driving component, capacitor lower electrode and electric capacity top electrode, and wherein protective seam and colored filter film have contact hole, and contact hole is positioned at above the opening and expose the subregion of electric capacity top electrode.Pixel electrode is disposed on the colored filter film, and electrically connects by contact hole and electric capacity top electrode, and wherein the sidewall of contact hole is between the outer rim of the sidewall of opening and electric capacity top electrode.
According to the described dot structure of the embodiment of the invention, the area of above-mentioned opening is for example less than the area of contact hole, and the area of contact hole is for example less than the area of electric capacity top electrode.
According to the described dot structure of the embodiment of the invention, the outer rim of above-mentioned electric capacity top electrode is for example between the sidewall of the outer rim of capacitor lower electrode and contact hole.
According to the described dot structure of the embodiment of the invention, above-mentioned capacitor lower electrode for example is the annular capacitor bottom electrode.
According to the described dot structure of the embodiment of the invention, can also comprise the dielectric layer that is disposed between capacitor lower electrode and the electric capacity top electrode.
According to the described dot structure of the embodiment of the invention, can also comprise the overlayer (overcoat) that is disposed between colored filter film and the pixel electrode.
The present invention proposes a kind of alignment mark in addition, be suitable for being made on the active assembly array substrate that is integrated with colored filter film, the active assembly array substrate that wherein is integrated with colored filter film comprises first patterned conductive layer, second patterned conductive layer and a plurality of colored filter film, and alignment mark comprises first pattern, second pattern and the 3rd pattern.First pattern has first opening, and wherein the material of first pattern is identical in fact with the material of first patterned conductive layer.Second pattern has second opening and is positioned at first pattern top, and wherein the material of second pattern is identical in fact with the material of second patterned conductive layer.The 3rd pattern is positioned at first opening and second opening top, and wherein the material of the 3rd pattern is identical in fact with the material of colored filter film, and the outer rim of the 3rd pattern is between the sidewall of the sidewall of first opening and second opening.
According to the described alignment mark of the embodiment of the invention, the area of the first above-mentioned opening is for example less than the area of the 3rd pattern, and the area of the 3rd pattern is for example less than the area of second opening.
According to the described alignment mark of the embodiment of the invention, the first above-mentioned opening is a rectangular aperture for example, and second opening for example is a rectangular aperture.
According to the described alignment mark of the embodiment of the invention, the first above-mentioned opening is the cruciform opening for example, and second opening for example is the cruciform opening.
According to the described alignment mark of the embodiment of the invention, can also comprise the dielectric layer that is disposed between first pattern and second pattern.
According to the described alignment mark of the embodiment of the invention, can also comprise the protective seam that is covered on second pattern.
According to the described alignment mark of the embodiment of the invention, can also comprise first scale pattern (graduation pattern) and second scale pattern, wherein the material of first scale pattern is identical in fact with the material of first patterned conductive layer or second patterned conductive layer, and the material of second scale pattern is identical in fact with the material of colored filter film.
Based on above-mentioned, in one embodiment of this invention, because capacitor lower electrode has opening, whether the mis-alignment degree in the time of therefore can whether judging the formation colored filter film between the outer rim of the sidewall of the opening of capacitor lower electrode and electric capacity top electrode by the sidewall of the contact hole of sense colors light filter film exceeds permissible range, judging promptly whether product is up to specification, and can carry out duplicate acknowledgment in process of production.
In addition, in another embodiment of the present invention, whether the mis-alignment degree in the time of can whether judging the formation colored filter film between the sidewall of the opening of the sidewall of the opening of first pattern and second pattern by the outer rim that detects the 3rd pattern (its material is identical in fact with the material of colored filter film) in the alignment mark equally exceeds permissible range.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Figure 1A is according to looking synoptic diagram on the dot structure that the embodiment of the invention illustrated;
The diagrammatic cross-section of Figure 1B for being illustrated along the I-I ' hatching line among Figure 1A;
Fig. 2 A is according to looking synoptic diagram on the alignment mark that one embodiment of the invention illustrated;
The diagrammatic cross-section of Fig. 2 B for being illustrated along the II-II ' hatching line among Fig. 2 A;
Fig. 3 is according to looking synoptic diagram on the alignment mark that another embodiment of the present invention illustrated;
Fig. 4 is for looking synoptic diagram on the scale pattern in the alignment mark of the present invention.
Wherein, Reference numeral:
10: dot structure 100: substrate
102: driving component 102a: channel layer
104,108: patterned conductive layer 104a: capacitor lower electrode
104a ', 206a, 206b, 208a, 208b: opening 104b: sweep trace
104d, 108e, 108f, 108g: current-carrying part 106,212: dielectric layer
108a: electric capacity top electrode 108a ': outer rim
108b: data line 108c: drain electrode
108d: source electrode 110: protective seam
112: colored filter film 114: overlayer
116: pixel electrode 118a, 118b: pixel region
120: contact hole
200,300: alignment mark
202: the active assembly array substrate that is integrated with colored filter film
204: the neighboring area
206,208,210: pattern
400,402: scale pattern
Embodiment
Figure 1A is according to looking synoptic diagram on the dot structure that the embodiment of the invention illustrated.The diagrammatic cross-section of Figure 1B for being illustrated along the I-I ' hatching line among Figure 1A.In the present embodiment, for convenience of explanation, only show a pixel region.This pixel region has two pixel electrodes, and correspondence is provided with two driving components.Certainly, look the actual design demand, pixel region also can only have one or more pixel electrode, and the driving component according to the actual design demand is set.In addition, graphic clear in order to make, omitted rete partly among Figure 1A, as dielectric layer 106, overlayer 114 etc.
Please be simultaneously with reference to Figure 1A and Figure 1B, dot structure 10 is positioned on the substrate 100.Dot structure 10 comprises driving component 102, patterned conductive layer 104, dielectric layer 106, patterned conductive layer 108, protective seam 110, colored filter film 112, overlayer 114 and pixel electrode 116.Driving component 102 for example is that (thin film transistor, TFT), it has grid (not shown), channel layer 102a, source electrode 108c and the 108d etc. that drains to thin film transistor (TFT).The sweep trace 104b that patterned conductive layer 104 comprises capacitor lower electrode 104a, be parallel to each other, the grid of driving component 102 and as the current-carrying part 104d of common line (common line).Capacitor lower electrode 104a has opening 104a '.Opening 104a ' the meaning is meant that the material of capacitor lower electrode 104a is removed in the predetermined position that will form opening 104a ', and can expose rete (not shown) or substrate 100 under it.Capacitor lower electrode 104a is the annular capacitor bottom electrode for example, but is not limited thereto.In other embodiment, capacitor lower electrode 104a can be H type, U type, I type, S type or the like.Patterned conductive layer 108 comprises the source electrode 108d and 108c and current-carrying part 108e, 108f, the 108g of draining of electric capacity top electrode 108a, the data line 108b that is parallel to each other, driving component 102.Electric capacity top electrode 108a is positioned at capacitor lower electrode 104a top, and electrically connects with the drain electrode 108d of driving component 102 by current-carrying part 108f.Specifically, electric capacity top electrode 108a can cover the dielectric layer 106 of opening 104a ' top and be positioned at the part zone of capacitor lower electrode 104a top dielectric layer 106a.Sweep trace 104b and data line 108b interlock and define pixel region 118a and 118b on substrates 100, and two driving components 102 then correspond respectively to pixel region 118a and 118b, and are electrically connected to corresponding scanning beam 104b and data line 108b respectively.In addition, dielectric layer 106 is disposed on the substrate 100, with overlay pattern conductive layer 104 and by opening 104a ' institute exposed substrate 100.In addition, protective seam 110 covers dielectric layer 106, driving component 102, patterned conductive layer 104,108.The detailed configuration relation and the material thereof of above-mentioned substrate 100, driving component 102, patterning conductor layer 104 and 108, dielectric layer 106, protective seam 110 are well known to those skilled in the art; and its configuration mode is not limited to shown in the accompanying drawing of the present invention, so in this NES.
In addition,, can take mode same as the previously described embodiments, detect the mis-alignment degree via the alignment mark of the neighboring area that is positioned at substrate and whether exceed permissible range for the active assembly array substrate that is integrated with colored filter film.
Fig. 2 A is according to looking synoptic diagram on the alignment mark that one embodiment of the invention illustrated.The diagrammatic cross-section of Fig. 2 B for being illustrated along the II-II ' hatching line among Fig. 2 A.Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, alignment mark 200 is formed on the neighboring area 204 of the active assembly array substrate 202 that is integrated with colored filter film.The active assembly array substrate 202 that is integrated with colored filter film comprises first patterned conductive layer (in order to as the grid of capacitor lower electrode, the sweep trace that is parallel to each other, driving component and common line or the like), second patterned conductive layer (in order to the source electrode and drain electrode or the like as electric capacity top electrode, the data line that is parallel to each other, driving component), colored filter film and pixel electrode.For convenience of explanation, do not show first patterned conductive layer, second patterned conductive layer, colored filter film and the pixel electrode that is made in the pixel region among Fig. 2 A and Fig. 2 B.
In the present embodiment, the distance between the sidewall of the sidewall of opening 206a and opening 208a is the permissible range of the mis-alignment when forming pattern 210.Whether the mis-alignment degree when the mis-alignment degree decidable when in other words, forming pattern 210 by detection forms colored filter film exceeds permissible range.When the outer rim of pattern 210 is between the sidewall of the sidewall of opening 206a and opening 208a (the mis-alignment degree does not exceed permissible range), then be judged to be up to specification; When the outer rim of pattern 210 is not between the sidewall of the sidewall of opening 206a and opening 208a (the mis-alignment degree exceeds permissible range), then is judged to be and falls short of specifications.Therefore, whether between the sidewall of the sidewall of opening 206a and opening 208a, can judge promptly whether product is up to specification by the outer rim of check pattern 210, and can carry out duplicate acknowledgment in process of production.
In the above-described embodiments, opening 206a and opening 208a are all rectangular aperture, and in other embodiments, opening 206a and opening 208a also can be other shaped aperture, for example square, rhombus, pentagon, hexagon or the like.
Fig. 3 is according to looking synoptic diagram on the alignment mark that another embodiment of the present invention illustrated.Please refer to Fig. 3, alignment mark 300 is with the difference of alignment mark 200: in alignment mark 300, the opening 206b of pattern 206 and the opening 208b of pattern 208 are all the cruciform opening.
In addition, alignment mark 200 can also comprise scale pattern 400 and scale pattern 402 with alignment mark 300, as shown in Figure 4.The material of scale pattern 400 is identical in fact with the material of first patterned conductive layer or second patterned conductive layer, that is scale pattern 400 and first patterned conductive layer or second patterned conductive layer can form in same fabrication steps.The material of scale pattern 402 is identical in fact with the material of colored filter film, that is scale pattern 402 can form in same fabrication steps with colored filter film.Can further detect the numerical value of mis-alignment degree by scale pattern 400 and scale pattern 402.In other words, scale pattern 400 and the scale pattern 402 corresponding mis-alignment degree that can judge the two whether.
Though the present invention with embodiment openly as above; but it is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when doing a little change and modification, so protection scope of the present invention is as the criterion when looking the accompanying Claim book person of defining.
Claims (13)
1. a dot structure is characterized in that, comprising:
One driving component;
One capacitor lower electrode has an opening;
One electric capacity top electrode is positioned at this capacitor lower electrode top, and electrically connects with this driving component;
One protective seam covers this driving component, this capacitor lower electrode and this electric capacity top electrode;
One colored filter film, be disposed on this protective seam to cover this driving component, this capacitor lower electrode and this electric capacity top electrode, wherein this protective seam and this colored filter film have a contact hole, and this contact hole is positioned at this opening top and exposes the subregion of this electric capacity top electrode; And
One pixel electrode is disposed on this colored filter film, and by the electric connection of this contact hole and this electric capacity top electrode, and wherein the sidewall of this contact hole is between the outer rim of the sidewall of this opening and this electric capacity top electrode.
2. dot structure as claimed in claim 1 is characterized in that the area of this opening is less than the area of this contact hole, and the area of this contact hole is less than the area of this electric capacity top electrode.
3. dot structure as claimed in claim 1 is characterized in that, the outer rim of this electric capacity top electrode is between the sidewall of the outer rim of this capacitor lower electrode and this contact hole.
4. dot structure as claimed in claim 1 is characterized in that, this capacitor lower electrode comprises an annular capacitor bottom electrode.
5. dot structure as claimed in claim 1 is characterized in that, also comprises a dielectric layer, is disposed between this capacitor lower electrode and this electric capacity top electrode.
6. dot structure as claimed in claim 1 is characterized in that, also comprises an overlayer, is disposed between this colored filter film and this pixel electrode.
7. alignment mark, being suitable for being made in one is integrated with on the active assembly array substrate of colored filter film, it is characterized in that, this active assembly array substrate that is integrated with colored filter film comprises one first patterned conductive layer, one second patterned conductive layer and a plurality of colored filter film, and this alignment mark comprises:
One first pattern has one first opening, and wherein the material of this first pattern is identical in fact with the material of this first patterned conductive layer;
One second pattern has one second opening and is positioned at this first pattern top, and wherein the material of this second pattern is identical in fact with the material of this second patterned conductive layer; And
One the 3rd pattern is positioned at this first opening and this second opening top, and wherein the material of the 3rd pattern is identical in fact with the material of those colored filter film, and the outer rim of the 3rd pattern is between the sidewall of the sidewall of this first opening and this second opening.
8. alignment mark as claimed in claim 7 is characterized in that the area of this first opening is less than the area of the 3rd pattern, and the area of the 3rd pattern is less than the area of this second opening.
9. alignment mark as claimed in claim 7 is characterized in that, this first opening is a rectangular aperture, and this second opening is a rectangular aperture.
10. alignment mark as claimed in claim 7 is characterized in that, this first opening is a cruciform opening, and this second opening is a cruciform opening.
11. alignment mark as claimed in claim 7 is characterized in that, also comprises a dielectric layer, is disposed between this first pattern and this second pattern.
12. alignment mark as claimed in claim 7 is characterized in that, also comprises a protective seam, is covered on this second pattern.
13. alignment mark as claimed in claim 7 is characterized in that, also comprises:
One first scale pattern; And
One second scale pattern, wherein the material of this first scale pattern is identical in fact with the material of this first patterned conductive layer or this second patterned conductive layer, and the material of this second scale pattern is identical in fact with the material of those colored filter film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101532708A CN101825823B (en) | 2010-04-21 | 2010-04-21 | Pixel structure and active component array substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101532708A CN101825823B (en) | 2010-04-21 | 2010-04-21 | Pixel structure and active component array substrate |
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| CN101825823A true CN101825823A (en) | 2010-09-08 |
| CN101825823B CN101825823B (en) | 2012-01-25 |
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| CN2010101532708A Expired - Fee Related CN101825823B (en) | 2010-04-21 | 2010-04-21 | Pixel structure and active component array substrate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102646629A (en) * | 2011-07-05 | 2012-08-22 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof |
| CN104483793A (en) * | 2014-12-30 | 2015-04-01 | 深圳市华星光电技术有限公司 | TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method thereof |
| CN110147002A (en) * | 2019-04-28 | 2019-08-20 | 武汉华星光电技术有限公司 | Align feeler switch, liquid crystal display panel and contraposition method for assembling |
| WO2022022171A1 (en) * | 2020-07-31 | 2022-02-03 | 长鑫存储技术有限公司 | Semiconductor structure manufacturing method and semiconductor structure |
| US11882682B2 (en) | 2020-07-31 | 2024-01-23 | Changxin Memory Technologies, Inc. | Method for manufacturing semiconductor structure, and semiconductor structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102646629A (en) * | 2011-07-05 | 2012-08-22 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof |
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| CN104483793A (en) * | 2014-12-30 | 2015-04-01 | 深圳市华星光电技术有限公司 | TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method thereof |
| CN110147002A (en) * | 2019-04-28 | 2019-08-20 | 武汉华星光电技术有限公司 | Align feeler switch, liquid crystal display panel and contraposition method for assembling |
| CN110147002B (en) * | 2019-04-28 | 2022-04-26 | 武汉华星光电技术有限公司 | Alignment test key, liquid crystal display panel and alignment assembly method |
| WO2022022171A1 (en) * | 2020-07-31 | 2022-02-03 | 长鑫存储技术有限公司 | Semiconductor structure manufacturing method and semiconductor structure |
| US11882682B2 (en) | 2020-07-31 | 2024-01-23 | Changxin Memory Technologies, Inc. | Method for manufacturing semiconductor structure, and semiconductor structure |
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| Publication number | Publication date |
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| CN101825823B (en) | 2012-01-25 |
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