CN101814548A - Method for manufacturing double-layer film of crystalline silicon solar cell - Google Patents
Method for manufacturing double-layer film of crystalline silicon solar cell Download PDFInfo
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- CN101814548A CN101814548A CN200910046334A CN200910046334A CN101814548A CN 101814548 A CN101814548 A CN 101814548A CN 200910046334 A CN200910046334 A CN 200910046334A CN 200910046334 A CN200910046334 A CN 200910046334A CN 101814548 A CN101814548 A CN 101814548A
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Abstract
The invention relates to a method for manufacturing a double-layer film of a crystalline silicon solar cell. The method is characterized by comprising the following specific steps of: mixing tetraethyl orthosilicate and ethanol, stirring and heating, adding dilute solution of hydrochloric acid into the solution, cooling, adding an organic additive into the solution, stirring and dissolving, and closing and aging to obtain a sol; and preparing a substrate of the crystalline silicon solar cell by a routine method, forming a silicon nitride film by a plasma enhanced chemical vapor deposition method, spraying the prepared sol on the silicon nitride film to prepare a silicon dioxide film, performing heat treatment on the obtained silicon dioxide film at the temperature of between 200 and 600 DEG C, printing positive and negative electrodes and a back field, drying, and sintering. The method has the advantages that: the light reflectivity of the surface of the solar cell is lower; the power of a solar cell plate is higher; and the short-wave and long-wave absorption of the double-layer film cell is further improved.
Description
Technical field
The present invention relates to a kind of manufacture method of double-layer film of crystalline silicon solar cell, belong to technical field of solar batteries.
Background technology
Crystal-silicon solar cell is to be transform light energy the opto-electronic device of electric energy.Its photoelectric conversion efficiency is defined as gross output and the ratio that incides the sunlight gross power of solar battery surface.For improving the photoelectric conversion efficiency of crystal silicon solar energy battery, should reduce the loss of battery surface reflection of light, increase optical transmission.Two kinds of methods of main at present employing: (1) corrodes into matte with battery surface, increases the incident number of times of light at battery surface; (2) plate the antireflective coating of one or more layers optical property coupling at battery surface. the making of antireflective coating directly affects solar cell to the reflection of incident light rate, and the raising of efficiency of solar cell is played important effect.Have an antireflecting while for the requirement of antireflective coating and preferably have certain passivation effect, to improve photoelectric conversion efficiency.At present on a large scale industrialization be at crystal silicon solar energy battery surface PECVD one deck silicon nitride antireflective coating, have and have certain passivation effect when hanging down anti-reflective effect.Yet the reflectivity of silicon nitride antireflective coating silicon solar cell also is not very low, how further to reduce reflectivity and becomes a great problem.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of double-layer film of crystalline silicon solar cell, it can antireflecting effectively while and wavelength Conversion effect, can improve the photoelectric conversion efficiency of solar cell.
In order to achieve the above object, technical scheme of the present invention provides a kind of manufacture method of double-layer film of crystalline silicon solar cell, it is characterized in that, concrete steps are:
The first step: measuring mol ratio is 1: the hydrochloric acid and the organic additive of the positive tetraethyl orthosilicate of 5-50: 0.5-10: 0.001-1: 0-0.2, absolute ethyl alcohol, deionized water, 36.5wt% concentration, hydrochloric acid is added in the deionized water dilutes, positive tetraethyl orthosilicate and absolute ethyl alcohol are mixed, be heated with stirring to 20-100 ℃, divide the hydrochloric acid solution that adds dilution for 5-10 time, treat to continue to stir 60～180 minutes behind the temperature stabilization, cooling, add organic additive, stirring and dissolving, the sealing ageing obtains colloidal sol;
Second step: prepare the crystal silicon solar energy battery substrate with conventional method, on the crystal silicon solar energy battery substrate, form silicon nitride film with the plasma-reinforced chemical vapor deposition method, the colloidal sol that adopts the first step to make sprays the preparation silicon dioxide film on silicon nitride film, wherein spraying rate is 1～50ml/min, spray time is 1～30s, spraying temperature is 20～200 ℃, the silicon dioxide film thickness is 30～200nm, with the silicon dioxide film that obtains at 200～600 ℃ of heat treatment 1-30 minutes, printing positive and negative electrode on silicon dioxide film, back of the body field, oven dry is 800-1000 ℃ of sintering 5-120 second.
Further, the organic additive in the described first step is preferably silane coupler KH-560, softex kw, N, more than one among dinethylformamide and the polyethylene glycol.
Main beneficial effect of the present invention is:
(1) preparation process is simple and convenient, expense is cheap;
(2) duplicature has hardness height, rub resistance, good stability, can protect silicon solar cell effectively;
(3) the solar cell surface light reflectivity is lower, and the reflectivity between spectral region 300nm-1200nm is compared with uncoated and reduced more than 10%;
(4) power of solar battery sheet is higher.Through behind silicon nitride film surface applied duplicature, photoelectric conversion efficiency is compared with uncoated and is improved more than 1%;
(5) the duplicature battery absorbs aspect shortwave and long wave further and improves.
Description of drawings
Fig. 1 is the crystal silicon solar energy battery structure chart.
Embodiment
Further specify the present invention below in conjunction with embodiment.
Embodiment 1
As shown in Figure 1, be the double-layer antireflection coating of crystalline silicon solar battery structure chart, described crystal silicon solar energy battery is by grid line 1, SiO
2Antireflective coating 2, Si
xN
y: H antireflective coating 3, N type Si4 and P mold base Si5 form.
Its preparation method is as follows:
The first step: measuring mol ratio is 1: 5: 0.5: the hydrochloric acid of 0.001 positive tetraethyl orthosilicate, absolute ethyl alcohol, deionized water, 36.5wt% concentration, hydrochloric acid is added in the deionized water dilutes, positive tetraethyl orthosilicate and absolute ethyl alcohol are mixed, be heated with stirring to 20 ℃, divide the hydrochloric acid solution of dilution 5 times and add in the above-mentioned solution, treat to continue to stir 60 minutes cooling behind the temperature stabilization, stirring and dissolving, the sealing ageing obtains colloidal sol;
Second step: prepare the crystal silicon solar energy battery substrate with conventional method, on the crystal silicon solar energy battery substrate, form silicon nitride film with the plasma-reinforced chemical vapor deposition method, the colloidal sol that adopts the first step to make sprays the preparation silicon dioxide film on silicon nitride film, wherein spraying rate is 1ml/min, spray time is 1s, spraying temperature is 20 ℃, the silicon dioxide film thickness is 30nm, with the silicon dioxide film that obtains 200 ℃ of heat treatments 30 minutes, republish positive and negative electrode, back of the body field, oven dry was 800 ℃ of sintering 120 seconds.
The visible reflectance of the duplicature silicon solar cell that present embodiment is prepared is lower more than 10% than normal battery sheet; The power of its battery improves more than 1%; Quantum efficiency test shows, its duplicature battery absorb aspect shortwave and long wave further and improve.
Embodiment 2
A kind of manufacture method of double-layer film of crystalline silicon solar cell is characterized in that, concrete steps are:
The first step: measuring mol ratio is 1: 50: 10: the hydrochloric acid and the organic additive of 1: 0.2 positive tetraethyl orthosilicate, absolute ethyl alcohol, deionized water, 36.5wt% concentration, hydrochloric acid is added in the deionized water dilutes, positive tetraethyl orthosilicate and absolute ethyl alcohol are mixed, be heated with stirring to 100 ℃, the hydrochloric acid solution of dilution is divided and adds for 10 times in the above-mentioned solution, treat to continue to stir 180 minutes behind the temperature stabilization, cooling, add organic additive silane coupler KH-560, stirring and dissolving, the sealing ageing obtains colloidal sol;
Second step: prepare the crystal silicon solar energy battery substrate with conventional method, on the crystal silicon solar energy battery substrate, form silicon nitride film with the plasma-reinforced chemical vapor deposition method, the colloidal sol that adopts the first step to make sprays the preparation silicon dioxide film on silicon nitride film, wherein spraying rate is 50ml/min, spray time is 30s, spraying temperature is 200 ℃, the silicon dioxide film thickness is 200nm, with the silicon dioxide film that obtains 600 ℃ of heat treatments 1 minute, republish positive and negative electrode, back of the body field, oven dry was 1000 ℃ of sintering 5 seconds.
The visible reflectance of the duplicature silicon solar cell that present embodiment is prepared is lower more than 10% than normal battery sheet; The power of its battery improves more than 1%; Quantum efficiency test shows, its duplicature battery absorb aspect shortwave and long wave further and improve.
A kind of manufacture method of double-layer film of crystalline silicon solar cell is characterized in that, concrete steps are:
The first step: measuring mol ratio is 1: 50: 10: 1: 0.2 positive tetraethyl orthosilicate, absolute ethyl alcohol, deionized water, the hydrochloric acid of 36.5wt% concentration and organic additive, hydrochloric acid is added in the deionized water dilutes, positive tetraethyl orthosilicate and absolute ethyl alcohol are mixed, be heated with stirring to 100 ℃, the hydrochloric acid solution of dilution is divided and adds for 10 times in the above-mentioned solution, treat to continue to stir 180 minutes behind the temperature stabilization, cooling, adding organic additive mol ratio is 1: 1: 1 a softex kw, N, dinethylformamide, polyethylene glycol, stirring and dissolving, the sealing ageing obtains colloidal sol;
Second step: prepare the crystal silicon solar energy battery substrate with conventional method, on the crystal silicon solar energy battery substrate, form silicon nitride film with the plasma-reinforced chemical vapor deposition method, the colloidal sol that adopts the first step to make sprays the preparation silicon dioxide film on silicon nitride film, wherein spraying rate is 50ml/min, spray time is 30s, spraying temperature is 200 ℃, the silicon dioxide film thickness is 200nm, with the silicon dioxide film that obtains 600 ℃ of heat treatments 5 minutes, republish positive and negative electrode, back of the body field, oven dry was 850 ℃ of sintering 100 seconds.
The visible reflectance of the duplicature silicon solar cell that present embodiment is prepared is lower more than 10% than normal battery sheet; The power of its battery improves more than 1%; Quantum efficiency test shows, its duplicature battery absorb aspect shortwave and long wave further and improve.
Embodiment 4
A kind of manufacture method of double-layer film of crystalline silicon solar cell is characterized in that, concrete steps are:
The first step: measuring mol ratio is 0.1: 20: 0.2: 0.01: 0.006 positive tetraethyl orthosilicate, ethanol, deionized water, the hydrochloric acid of 36.5wt% concentration and organic additive, hydrochloric acid is added in the deionized water dilutes, positive tetraethyl orthosilicate and absolute ethyl alcohol are mixed, be heated with stirring to 50 ℃, the hydrochloric acid solution of dilution is divided and adds for 10 times in the above-mentioned solution, treat to continue to stir 60 minutes behind the temperature stabilization, be cooled to 20 ℃, the adding mol ratio is 1: 5 organic additive silane coupler KH-560 and a softex kw (CTAB), stirring and dissolving, the sealing ageing obtained colloidal sol in 1 day;
Second step: prepare the crystal silicon solar energy battery substrate with conventional method, on the crystal silicon solar energy battery substrate, form silicon nitride film with the plasma-reinforced chemical vapor deposition method, the colloidal sol that adopts the first step to make sprays the preparation silicon dioxide film on silicon nitride film, wherein spraying rate is 20ml/min, spray time is 20s, spraying temperature is 80 ℃, the silicon dioxide film thickness is 200nm, with the silicon dioxide film that obtains 300 ℃ of heat treatments 20 minutes, printing positive and negative electrode, back of the body field on silicon dioxide film, oven dry was 900 ℃ of sintering 80 seconds.
The visible reflectance of the duplicature silicon solar cell that present embodiment is prepared is lower more than 10% than normal battery sheet; The power of its battery improves more than 1%; Quantum efficiency test shows, its duplicature battery absorb aspect shortwave and long wave further and improve.
A kind of manufacture method of double-layer film of crystalline silicon solar cell is characterized in that, concrete steps are:
The first step: measuring mol ratio is 0.1: 10: 0.3: 0.02: 0.012 positive tetraethyl orthosilicate, ethanol, deionized water, the hydrochloric acid of 36.5wt% concentration and organic additive, hydrochloric acid is added in the deionized water dilutes, positive tetraethyl orthosilicate and absolute ethyl alcohol are mixed, be heated with stirring to 20 ℃, the hydrochloric acid solution of dilution is divided and adds for 10 times in the above-mentioned solution, treat to continue to stir 2 hours behind the temperature stabilization, be cooled to 20 ℃, the adding mol ratio is 1: 5 organic additive silane coupler KH-560 and N, dinethylformamide (DMF), stirring and dissolving, the sealing ageing obtained colloidal sol in 1 day;
Second step: prepare the crystal silicon solar energy battery substrate with conventional method, on the crystal silicon solar energy battery substrate, form silicon nitride film with the plasma-reinforced chemical vapor deposition method, the colloidal sol that adopts the first step to make sprays the preparation silicon dioxide film on silicon nitride film, wherein spraying rate is 15ml/min, spray time is 30s, spraying temperature is 100 ℃, the silicon dioxide film thickness is 200nm, with the silicon dioxide film that obtains 350 ℃ of heat treatments 30 minutes, printing positive and negative electrode, back of the body field on silicon dioxide film, oven dry was 950 ℃ of sintering 50 seconds.
The visible reflectance of the duplicature silicon solar cell that present embodiment is prepared is lower more than 10% than normal battery sheet; The power of its battery improves more than 1%; Quantum efficiency test shows, its duplicature battery absorb aspect shortwave and long wave further and improve.
Embodiment 6
A kind of manufacture method of double-layer film of crystalline silicon solar cell is characterized in that, concrete steps are:
The first step: measuring mol ratio is 0.1: 30: 0.3: the hydrochloric acid and the organic additive of 0.05: 0.016 positive tetraethyl orthosilicate, absolute ethyl alcohol, deionized water, 36.5wt% concentration, hydrochloric acid is added in the deionized water dilutes, positive tetraethyl orthosilicate and absolute ethyl alcohol are mixed, be heated with stirring to 20 ℃, the hydrochloric acid solution of dilution is divided and adds for 10 times in the above-mentioned solution, treat to continue to stir 2 hours behind the temperature stabilization, be cooled to 20 ℃, the adding mol ratio is 1: 10: 5 organic additive polyethylene glycol, DMF and CTAB, stirring and dissolving, the sealing ageing obtained colloidal sol in 1 day;
Second step: prepare the crystal silicon solar energy battery substrate with conventional method, on the crystal silicon solar energy battery substrate, form silicon nitride film with the plasma-reinforced chemical vapor deposition method, the colloidal sol that adopts the first step to make sprays the preparation silicon dioxide film on silicon nitride film, wherein spraying rate is 30ml/min, spray time is 40s, spraying temperature is 200 ℃, the silicon dioxide film thickness is 200nm, with the silicon dioxide film that obtains 400 ℃ of heat treatments 40 minutes, printing positive and negative electrode, back of the body field on silicon dioxide film, oven dry was 900 ℃ of sintering 20 seconds.
The visible reflectance of the duplicature silicon solar cell that present embodiment is prepared is lower more than 10% than normal battery sheet; The power of its battery improves more than 1%; Quantum efficiency test shows, its duplicature battery absorb aspect shortwave and long wave further and improve.
Claims (2)
1. the manufacture method of a double-layer film of crystalline silicon solar cell is characterized in that, concrete steps are:
The first step: measuring mol ratio is 1: the hydrochloric acid and the organic additive of the positive tetraethyl orthosilicate of 5-50: 0.5-10: 0.001-1: 0-0.2, absolute ethyl alcohol, deionized water, 36.5vol% concentration, hydrochloric acid is added in the deionized water dilutes, positive tetraethyl orthosilicate and absolute ethyl alcohol are mixed, be heated with stirring to 20-100 ℃, divide the hydrochloric acid solution that adds dilution for 5-10 time, treat to continue to stir 60～180 minutes behind the temperature stabilization, cooling, add organic additive, stirring and dissolving, the sealing ageing obtains colloidal sol;
Second step: prepare the crystal silicon solar energy battery substrate with conventional method, on the crystal silicon solar energy battery substrate, form silicon nitride film with the plasma-reinforced chemical vapor deposition method, the colloidal sol that adopts the first step to make sprays the preparation silicon dioxide film on silicon nitride film, wherein spraying rate is 1～50ml/min, spray time is 1～30s, spraying temperature is 20～200 ℃, the silicon dioxide film thickness is 30～200nm, with the silicon dioxide film that obtains at 200～600 ℃ of heat treatment 1-30 minutes, printing positive and negative electrode on silicon dioxide film, back of the body field, oven dry is 800-1000 ℃ of sintering 5-120 second.
2. the manufacture method of a kind of double-layer film of crystalline silicon solar cell as claimed in claim 1, it is characterized in that, organic additive in the described first step is silane coupler KH-560, softex kw, N, more than one among dinethylformamide and the polyethylene glycol.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290490A (en) * | 2011-08-31 | 2011-12-21 | 无锡赛晶太阳能有限公司 | Preparation technology for dual-film passivated solar cell |
| CN106941126A (en) * | 2017-05-05 | 2017-07-11 | 孝感双华应用科技开发有限公司 | A kind of preparation method of high-performance antireflective coating |
| CN107572838A (en) * | 2017-08-29 | 2018-01-12 | 运研材料科技（上海）有限公司 | Preparation method with double layers of antireflection coatings glass |
| CN108735824A (en) * | 2017-04-24 | 2018-11-02 | 常州亚玛顿股份有限公司 | A kind of bright enhancement film crystal silicon solar energy battery plate and its manufacturing method |
| CN110148635A (en) * | 2019-04-28 | 2019-08-20 | 北京点域科技有限公司 | A kind of process flow reducing surface recombination anti-reflection film battery |
| CN110820029A (en) * | 2019-11-18 | 2020-02-21 | 贵州航天南海科技有限责任公司 | Aluminum alloy conductive oxide film protective agent |
| CN112366251A (en) * | 2020-11-25 | 2021-02-12 | 河南安彩高科股份有限公司 | Preparation method of solar cell antireflection film |
| CN112397600A (en) * | 2019-08-16 | 2021-02-23 | 福建金石能源有限公司 | High-waterproof flexible solar cell packaging material and preparation method thereof |
-
2009
- 2009-02-19 CN CN200910046334A patent/CN101814548A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290490A (en) * | 2011-08-31 | 2011-12-21 | 无锡赛晶太阳能有限公司 | Preparation technology for dual-film passivated solar cell |
| CN108735824A (en) * | 2017-04-24 | 2018-11-02 | 常州亚玛顿股份有限公司 | A kind of bright enhancement film crystal silicon solar energy battery plate and its manufacturing method |
| CN106941126A (en) * | 2017-05-05 | 2017-07-11 | 孝感双华应用科技开发有限公司 | A kind of preparation method of high-performance antireflective coating |
| CN106941126B (en) * | 2017-05-05 | 2018-07-13 | 孝感双华应用科技开发有限公司 | A kind of preparation method of high-performance antireflective coating |
| CN107572838A (en) * | 2017-08-29 | 2018-01-12 | 运研材料科技（上海）有限公司 | Preparation method with double layers of antireflection coatings glass |
| CN107572838B (en) * | 2017-08-29 | 2021-07-23 | 运研材料科技（上海）有限公司 | Preparation method of glass with double-layer antireflection coating |
| CN110148635A (en) * | 2019-04-28 | 2019-08-20 | 北京点域科技有限公司 | A kind of process flow reducing surface recombination anti-reflection film battery |
| CN112397600A (en) * | 2019-08-16 | 2021-02-23 | 福建金石能源有限公司 | High-waterproof flexible solar cell packaging material and preparation method thereof |
| CN110820029A (en) * | 2019-11-18 | 2020-02-21 | 贵州航天南海科技有限责任公司 | Aluminum alloy conductive oxide film protective agent |
| CN112366251A (en) * | 2020-11-25 | 2021-02-12 | 河南安彩高科股份有限公司 | Preparation method of solar cell antireflection film |
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Application publication date: 20100825 |