CN101814481B - 无基岛引线框结构及其生产方法 - Google Patents
无基岛引线框结构及其生产方法 Download PDFInfo
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- CN101814481B CN101814481B CN2010101658814A CN201010165881A CN101814481B CN 101814481 B CN101814481 B CN 101814481B CN 2010101658814 A CN2010101658814 A CN 2010101658814A CN 201010165881 A CN201010165881 A CN 201010165881A CN 101814481 B CN101814481 B CN 101814481B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 239000002184 metal Substances 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims description 76
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 239000005022 packaging material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- 239000000945 filler Substances 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- -1 Step 4 Substances 0.000 claims 1
- 239000003566 sealing material Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 13
- 238000005538 encapsulation Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101658814A CN101814481B (zh) | 2010-04-30 | 2010-04-30 | 无基岛引线框结构及其生产方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101658814A CN101814481B (zh) | 2010-04-30 | 2010-04-30 | 无基岛引线框结构及其生产方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101814481A CN101814481A (zh) | 2010-08-25 |
CN101814481B true CN101814481B (zh) | 2012-01-25 |
Family
ID=42621678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101658814A Active CN101814481B (zh) | 2010-04-30 | 2010-04-30 | 无基岛引线框结构及其生产方法 |
Country Status (1)
Country | Link |
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CN (1) | CN101814481B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101969032B (zh) * | 2010-09-04 | 2012-04-11 | 江苏长电科技股份有限公司 | 双面图形芯片正装先镀后刻模组封装方法 |
CN101958257B (zh) * | 2010-09-04 | 2012-07-04 | 江苏长电科技股份有限公司 | 双面图形芯片直接置放先镀后刻模组封装方法 |
CN102005432B (zh) * | 2010-09-30 | 2012-03-28 | 江苏长电科技股份有限公司 | 四面无引脚封装结构及其封装方法 |
US8735224B2 (en) | 2011-02-14 | 2014-05-27 | Stats Chippac Ltd. | Integrated circuit packaging system with routed circuit lead array and method of manufacture thereof |
CN102324411A (zh) * | 2011-09-13 | 2012-01-18 | 江苏长电科技股份有限公司 | 新型无基岛预填塑封料引线框结构 |
CN102324415B (zh) * | 2011-09-13 | 2013-03-06 | 江苏长电科技股份有限公司 | 无基岛预填塑封料先刻后镀引线框结构及其生产方法 |
CN102324412B (zh) * | 2011-09-13 | 2013-03-06 | 江苏长电科技股份有限公司 | 无基岛预填塑封料先镀后刻引线框结构及其生产方法 |
US9275877B2 (en) | 2011-09-20 | 2016-03-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming semiconductor package using panel form carrier |
CN102376656B (zh) * | 2011-11-28 | 2013-11-27 | 江苏长电科技股份有限公司 | 无基岛四面无引脚封装结构及其制造方法 |
CN102420206B (zh) * | 2011-11-30 | 2014-05-14 | 江苏长电科技股份有限公司 | 先镀后刻四面无引脚封装结构及其制造方法 |
CN102376672B (zh) * | 2011-11-30 | 2014-10-29 | 江苏长电科技股份有限公司 | 无基岛球栅阵列封装结构及其制造方法 |
CN105097758B (zh) | 2014-05-05 | 2018-10-26 | 日月光半导体制造股份有限公司 | 衬底、其半导体封装及其制造方法 |
CN113192900A (zh) * | 2021-04-02 | 2021-07-30 | 江阴苏阳电子股份有限公司 | 一种背面先蚀的封装结构的封装工艺 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI236742B (en) * | 2004-03-02 | 2005-07-21 | Kingtron Electronics Co Ltd | Manufacturing method of film carrier |
US7087461B2 (en) * | 2004-08-11 | 2006-08-08 | Advanced Semiconductor Engineering, Inc. | Process and lead frame for making leadless semiconductor packages |
CN201060865Y (zh) * | 2007-07-15 | 2008-05-14 | 天水华天科技股份有限公司 | 无基岛引线框架 |
CN201417765Y (zh) * | 2009-04-01 | 2010-03-03 | 苏州固锝电子股份有限公司 | 无基岛半导体芯片封装结构 |
CN201681895U (zh) * | 2010-04-30 | 2010-12-22 | 江苏长电科技股份有限公司 | 无基岛引线框结构 |
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2010
- 2010-04-30 CN CN2010101658814A patent/CN101814481B/zh active Active
Also Published As
Publication number | Publication date |
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CN101814481A (zh) | 2010-08-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170207 Address after: The 200127 Tianjin Tianjin FTA test area (Dongjiang Bonded Port) No. 6865 North Road, 1-1-1802-7 financial and trade center of Asia Patentee after: Xin Xin finance leasing (Tianjin) Co., Ltd. Address before: 214434 Binjiang Middle Road, Jiangyin Development Zone, Jiangsu, China, 275 Patentee before: Jiangsu Changjiang Electronics Technology Co., Ltd. |
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TR01 | Transfer of patent right | ||
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20100825 Assignee: Jiangsu Changjiang Electronics Technology Co., Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co., Ltd. Contract record no.: 2017320000152 Denomination of invention: No-pad lead frame structure and production method thereof Granted publication date: 20120125 License type: Exclusive License Record date: 20170614 |
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EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY Co.,Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co., Ltd. Contract record no.: 2017320000152 Date of cancellation: 20200416 |
|
TR01 | Transfer of patent right |
Effective date of registration: 20200423 Address after: 214434, No. 78, mayor road, Chengjiang, Jiangsu, Jiangyin, Wuxi Patentee after: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 1-1-1802-7, North Zone, financial and Trade Center, No. 6865, Asia Road, Tianjin pilot free trade zone (Dongjiang Free Trade Port Area), Tianjin Patentee before: Xin Xin finance leasing (Tianjin) Co., Ltd. |
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TR01 | Transfer of patent right |