CN101807590A - Multispectral photosensitive component - Google Patents
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- CN101807590A CN101807590A CN200910105372A CN200910105372A CN101807590A CN 101807590 A CN101807590 A CN 101807590A CN 200910105372 A CN200910105372 A CN 200910105372A CN 200910105372 A CN200910105372 A CN 200910105372A CN 101807590 A CN101807590 A CN 101807590A
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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Abstract
The invention relates to a multispectral photosensitive component which comprises multilayer composite photosensitive pixels which adopt a single-face or double-face machining mode, realize up-down placement in a silicic P or N basic layer in two, three or four and respectively induct spectra which are orthogonal or complementary in visible light or visible and infrared light spectra. Basic photosensitive pixels on different levels in the composite photosensitive pixels can be designed to induct different colors or spectra, therefore, a multispectral photosensitive chip is obtained by repeatedly arranging a macro unit comprising more than one composite photosensitive pixel. The multispectral photosensitive component comprises a new design of the multilayer photosensitive pixels and examples thereof used for single-face double-layer, double-face double-layer, double-face three-layer, double-face four-layer, single-face mixed double-layer and double-face mixed double-layer or multilayer multispectral photosensitive components. The multispectral photosensitive component has more favorable colored photosensitive property and colored photosensitive and infrared photosensitive integration and simple machining process.
Description
Technical field
The present invention relates to a kind of multi-optical spectrum light-sensitive device, specifically, relate to a kind of physics realization and making of multi-optical spectrum light-sensitive device.More accurate, the present invention relates to realize responding to simultaneously the sensor devices that is used for full-colour image of a plurality of spectrum (as visible light and infrared ray) with CCD or cmos semiconductor.Here, panchromaticly be meant whole interested spectrum.For common (visible light) sensor devices, panchromatic finger is contained red, and is green, blue and white whole visible spectrum.For the sensor devices of infrared and colored unification, panchromatic visible spectrum and the infrared spectrum of being meant.The present invention is infrared applicable to comprising, the multi-optical spectrum light-sensitive device of black and white and coloured image.
Background technology
The present invention be the inventor a little earlier 1 " multi-optical spectrum light-sensitive device and preparation method thereof " (PCT/CN2007/071262) and " multi-optical spectrum light-sensitive device and preparation method thereof " (Chinese application number: continuity 200810217270.2) aims to provide more concrete and preferred Semiconductor Physics and realizes.
Sensor devices before, or be absorbed in color visible, or be absorbed in infrared light seldom has the two is lumped together.Though other invention or application are also arranged, for example adopt the semiconductor technology (" Silicon infrared focalplane arrays " of indium antimony, M.Kimata, in Handbook of Infrared Detection Technologies, editedby M.Henini and M.Razeghi, pp.352-392, Elsevier Science Ltd., 2002), realize the induction of visible and infrared light simultaneously, but they do not obtain colour.And the existing method that obtains colored and infrared sensitization simultaneously is with a color sensitive device and an infrared sensor devices, the physics superposition together (as " and Backside-hybridPhotodetector for trans-chip detection of NIR light]; by T.Tokuda et al., in IEEEWorkshop on Charge-coupled Devices ﹠amp; Advanced Image Sensors, Elmau, Germany, May2003, and " A CMOS image sensor with eye-safe detection function using backsidecarrier injection ", T.Tokuda et al., J.Inst Image Information ﹠amp; Television Eng., 60 (3): 366-372, March 2006).
Existing sensor devices why, failing has three with the main cause that color sensitive device and infrared sensor devices integrate.First reason is that existing color sensitive device all needs to use color filter film (red/green/orchid, or green grass or young crops/Huang/magenta/green) and obtains colour.And these filter coatings also have a very strong light-filtering characteristic to infrared.In addition, bright in luster in order to allow, also on camera lens, add infrared filter specially, may send out the mist phenomenon to what chromatic image brought to weaken infrared light.Though three layers of sensitization technology of the X3 of Foveon company realize the selection of color with the degree of depth, saved filter coating, but very difficulty and industrialization situation are also bad for three layers of sensitization fabrication techniques, if add an infrared layer more below, so, situation only can be complicated more, thereby be difficult to possess practical value.Second reason is that the silicon that semiconductor is commonly used can only absorb the infrared ray of the following wavelength of 1100 nanometers usually.Therefore, much be used for the device of infrared sensitization, employing be other semi-conducting material, as germanium, SiGe mixed crystal, HgCdTe, materials such as InSb.These materials are not suitable for visible light.The 3rd is the manufacturing technology that lacks practicable bilayer or multilayer sensor devices.
Therefore, how to realize color sensitive better, and color sensitive device and infrared sensor devices carried out integrated that these problems await further research and improve.
Summary of the invention
Based on top described, the invention provides a kind of multi-optical spectrum light-sensitive device, not only can realize color sensitive better, also provide color sensitive device and the integrated implementation of infrared sensor devices.
The technical scheme that the present invention solve the technical problem is:
A kind of multi-optical spectrum light-sensitive device, comprise a basic unit, in described basic unit, be provided with a plurality of compound photosensitive pixels macrocells according to the predetermined pattern repeated arrangement, described compound photosensitive pixels macrocell comprises at least one compound photosensitive pixels, and described compound photosensitive pixels is made up of at least two basic photosensitive pixels, and described basic photosensitive pixels is along every layer of layered arrangement of direction of illumination, and in the two-layer at the most mode of one side, be distributed in the end face of basic unit, or the bottom surface, or end face and bottom surface.
In a kind of embodiment of described multi-optical spectrum light-sensitive device, basic photosensitive pixels in the described compound photosensitive pixels comprises 2, two-layer layout is divided in end face or bottom surface in basic unit, form the compound photosensitive pixels of single-surface double-layer, or be arranged in the end face and the bottom surface of basic unit, form two-sided two-layer compound photosensitive pixels.
Described multi-optical spectrum light-sensitive device, the compound photosensitive pixels in the described basic unit can be the compound photosensitive pixels of single-surface double-layer, thereby makes described multi-optical spectrum light-sensitive device constitute the single-surface double-layer sensor devices.
The compound photosensitive pixels of described single-surface double-layer can be by mixing (P doping) by be P earlier in the basic unit of a N silicon, and then on the layer that P mixes, and is N and mixes the N-P-N composite junction that the back constitutes and form.
The compound photosensitive pixels of described single-surface double-layer also can be by mixing (N doping) by be N earlier in the basic unit of a P silicon, and then on the layer that N mixes, and is P and mixes the P-N-P composite junction that the back constitutes and form.
Described multi-optical spectrum light-sensitive device, the compound photosensitive pixels in the described basic unit can be two-sided two-layer compound photosensitive pixels, thereby makes described multi-optical spectrum light-sensitive device constitute two-sided double-deck sensor devices.
Described two-sided two-layer compound photosensitive pixels can be by mixing the P-N-P composite junction that (Pdoping) obtain and form by all being P in the end face of the basic unit of a N silicon and bottom surface.
Described two-sided two-layer compound photosensitive pixels also can be by mixing the N-P-N composite junction that (N doping) obtain and form by all being N in the end face of the basic unit of a P silicon and bottom surface.
In a kind of execution mode of described multi-optical spectrum light-sensitive device, basic photosensitive pixels in the described compound photosensitive pixels comprises 3 or 4, wherein two-layer layout is divided in two end face or bottom surfaces in basic unit, remaining basic photosensitive pixels is divided one deck or two-layer layout at the bottom surface or the end face of basic unit, forms the compound photosensitive pixels of double-sided multi-layer.
Described multi-optical spectrum light-sensitive device, the compound photosensitive pixels in the described basic unit can be the compound photosensitive pixels of double-sided multi-layer, thereby makes described multi-optical spectrum light-sensitive device constitute the double-sided multi-layer sensor devices.
The compound photosensitive pixels of described double-sided multi-layer can be by mixing by all being P in the end face of the N of silicon basic unit and bottom surface, and mix that layer is that N mixes and the P-N-P that obtains at P again, N-P-N-P, and P-N-P-N, the composite junction of N-P-N-P-N forms.
The compound photosensitive pixels of described double-sided multi-layer can be by mixing by all being N in the end face of the P of silicon basic unit and bottom surface, and mix layer at N again and be P and mix the N-P-N that obtains, N-P-N-P, and P-N-P-N, or the composite junction of P-N-P-N-P forms.
Described multi-optical spectrum light-sensitive device, a spectral coverage of the pairwise orthogonal of each self-induction visible light of the basic photosensitive pixels in the described compound photosensitive pixels or visible light and infrared light, the spectral information that all compound photosensitive pixels of described compound photosensitive pixels macrocell are responded to combine and comprise RGB or the necessary spectral information of the colored reconstruction of CMYK.
Described multi-optical spectrum light-sensitive device, the spectrum of responding to from the nearest basic photosensitive pixels of light source in the described compound photosensitive pixels comprises the sky look, blueness, green, cyan, white and white add infrared colour.
Described multi-optical spectrum light-sensitive device, the spectrum of responding to from light source basic photosensitive pixels farthest in the described compound photosensitive pixels comprises the sky look, green, redness, yellow, white, redness adds infrared colour, and yellow adds infrared colour and white adds infrared colour.
The lower surface that described multi-optical spectrum light-sensitive device, the bottom of described compound photosensitive pixels unit are used to respond to the basic photosensitive pixels of infrared light is also grown better Si Ge crystal layer of pair infrared Absorption or Germanium crystal layer is arranged.
Described multi-optical spectrum light-sensitive device, the described bottom that is used to respond to the basic photosensitive pixels of infrared light, also plating is provided with the direct reflection plated film.
Described multi-optical spectrum light-sensitive device, described compound photosensitive pixels are sampled with active mode and are formed initiatively photosensitive pixels (Active Pixel).
Described multi-optical spectrum light-sensitive device, described compound photosensitive pixels is sampled with passive mode and is formed passive photosensitive pixels (Passive Pixel).
Described multi-optical spectrum light-sensitive device, the basic photosensitive pixels in the described compound photosensitive pixels are light sensitive diode or sensitization door.
Described multi-optical spectrum light-sensitive device, the sensitization mode of described multi-optical spectrum light-sensitive device comprises positive sensitization, back side sensitization, or two-way sensitization mode, described two-way sensitization mode comprise timesharing choosing to, subregion choosing to, or the pixel choosing is to mode.
Described multi-optical spectrum light-sensitive device, described predetermined pattern comprises the repeated arrangement of compound pixel, square formation is arranged, or honeycomb pattern is arranged.
Beneficial technical effects of the present invention is:
1, better color sensitive performance and color sensitive and infrared sensitization is integrated.In the present invention, at least two photosensitive pixels layers on the light source irradiation direction are provided with the form of the compound photosensitive pixels that comprises at least two basic photosensitive pixels, basic photosensitive pixels is responded to each spectral coverage of spectrum on different layers, like this, by the layout of photosensitive pixels layer on the degree of depth, realized to sense at least two spectral coverages at lip-deep same pixel location of basic unit, thereby better flexibility and more pixel arrangement on this lip-deep compound photosensitive pixels macrocell arranged in patterns are provided, thereby can significantly improve the sensitivity of sensor devices, resolution, and dynamic range.On the other hand, respond to visible light when two photosensitive pixels layers are arranged as one, another person responds to infrared light, then can realize integrated with visible light and infrared light easily, realizes responding to simultaneously colour and infrared light.
2, the processing technology of product realization is simple.The present invention can be by adopting existing C CD or CMOS sensitive chip processing technology and equipment, can be used in positive sensitization and can make easily, back side sensitization, or the single-surface double-layer multi-optical spectrum light-sensitive device of two-way sensitization, two-sided double-deck multi-optical spectrum light-sensitive device and double-sided multi-layer multi-optical spectrum light-sensitive device.Three layers of sensor devices of the Foveon company in the background technology, it is in order to realize color sensitive, thereby must arrange that responding to RGB three looks respectively for 3 layers finishes colored the reconstruction at same position.Yet, such mode, not only difficulty is very big in 3 layers processing, and in wiring, because the lead-in wire of each interlayer needs to isolate mutually, 3 layers of lead-in wire have obviously caused the difficulty in the wiring simultaneously.On such basis,, almost impossible if want that also increasing one deck carries out infrared sensitization.And the present invention, then arrange and finish colored the reconstruction with the pixel pattern on the plane, thereby need not arrange that 3 layers are realized colored the reconstruction, thereby be able to arrange at most upward that with one side the mode of two-layer basic photosensitive pixels realizes better color sensitive performance at depth direction.Because on simultaneously, at most only arrange two photosensitive pixels layers, thereby obviously reduced the difficulty of three-dimensional processing technology, and in wiring, also simple relatively.Especially when adopting two-sided double-deck mode, be that two basic photosensitive pixels in the compound photosensitive pixels are when being arranged in two relative faces, not only the same with the single-surface double-layer mode, has better color sensitive performance, for each face, it all is reduced to the plane processing technology, can be after the plane processing of finishing a photosensitive pixels layer on the one side, basic unit overturn and finish the processing of another photosensitive pixels layer equally with the plane processing technology, make processing technology be similar to the processing technology of existing single-surface single-layer sensor devices at another side.
3, finish colored the reconstruction because sensor devices of the present invention adopts degree of depth spectral filtering and plane pattern to arrange the mode that combines, on the one hand, can not need to do colored plated film, significantly improved yields.On the other hand, can provide redundant color information thereby a lot of bad point and dead point situations, can pass through back-end processing, utilize redundant color information to repair.Thereby reduced the rate of breakdown of sensor devices on the whole.
The present invention will describe a plurality of preferred realizations that can be used for the bilayer and the multilayer multi-optical spectrum light-sensitive device of visible light and infrared light by embodiment.These preferably realize, only are that the present invention is described as an example, rather than in order to limit protection scope of the present invention.
For the knowledgeable people of relevant industry, the above and other objects and advantages of the present invention, the details of the embodiment that combines description of drawings below reading will be fairly obvious after describing.
Description of drawings
For simplicity, to describe mainly all be schematic diagram based on light sensitive diode (Photo Diode) for following accompanying drawing.But nearly all example all can be used for sensitization door (Photo Gate) equally.
Fig. 1 is the schematic diagram of a traditional individual layer light sensitive diode.
Fig. 2 is the schematic diagram of three layers of compound light sensitive diode of a Foveon company invention, and wherein the induction of top layer diode is blue, and the intermediate diode induction is green, and the diode induction of bottom is red.This mode makes full use of the penetration depth relation relevant with wavelength of light.We can imagine the difficulty of this sensor devices in pixel reads from this figure: the pixel of three different colors, read circuit and will occupy very big space and difficult wiring.
Fig. 3 (a) and (b) are respectively the schematic diagrames of double-deck multi-optical spectrum light-sensitive device related to the present invention.Fig. 3 (a) is applicable to the single-surface double-layer sensor devices, and Fig. 3 (b) is applicable to two-sided double-deck sensor devices.Degree of depth T wherein
1, T
2, T
3, and T
4According to light in base material (silicon) the incident degree of depth and the relation curve of wavelength decide (Gerald C.Holst andTerrance S.Lomheim, " CMOS/CCD Sensors and Camera Systems ", JCD Publishing, pp.125-125, ISBN 9780819467300,2007).For example, if top layer is expected blueness (or cyan), so wherein T
1Should elect as (or about 4.5um) about 1.5um; And bottom is in order to obtain redness, then T
2And T
4At least should be 8um, T
3At least should be 4.5um.If bottom is in order to obtain yellow, T then
2And T
4At least should be 8um, T
3At least should be 1.5um.The light sensitive diode of top layer and the light sensitive diode of bottom have constituted a compound diode to (compound photosensitive pixels).When light when the top is shone, the light sensitive diode of top layer is nearer from light source.When light when the bottom is shone, the light sensitive diode of bottom is nearer from light source.
What Fig. 4 (a) and Fig. 4 (b) showed is to respond to the compound light sensitive diode of visible light and infrared light simultaneously to (compound photosensitive pixels).In order to accept infrared light, the thickness of the silicon base layer (T among Fig. 3
2And T
4) can be thicker.
Fig. 5 (a) and Fig. 5 (b) are the situation of compound light sensitive diode when being in back side illuminaton in the single-surface double-layer sensor devices, and wherein Fig. 5 (a) only responds to visible light, and Fig. 5 (b) responds to visible light and infrared light simultaneously.In order to make the thickness of two kinds of compound light sensitive diodes the same substantially, can be in the behind of the light sensitive diode of responding to infrared ray, growth absorbs better germanium of infrared light or Si Ge crystal (SiGe).
Fig. 6 (a) and Fig. 6 (b) are the situation of compound light sensitive diode when being in front illuminated in the two-sided double-deck sensor devices, and wherein Fig. 6 (a) only responds to visible light, and Fig. 6 (b) responds to visible light and infrared ray simultaneously.Equally, in order to make the thickness of two kinds of compound light sensitive diodes the same substantially, can be in the behind of the light sensitive diode of responding to infrared light, growth absorbs better germanium of infrared light or Si Ge crystal (SiGe).
What Fig. 7 showed is the situation that has reading device of the compound light sensitive diode among Fig. 3 (a).The single-surface double-layer sensor devices is because wiring and read the difficulty that circuit is shared, so relatively be suitable for realizing with (not with FD and amplifying circuit) passive photosensitive pixels (Passive Pixel).
What Fig. 8 showed is the situation that has reading device of the compound diode among Fig. 3 (b).By contrast, two-sided double-deck sensor devices is when layout reads circuit, and is also easier and flexible than individual layer sensor devices.Therefore, two-sided double-deck sensor devices promptly can be realized with passive photosensitive pixels (Passive Pixel), also can realize with active photosensitive pixels (Active Pixel), and, with active photosensitive pixels (Active Pixel) when realizing, average each pixel only can be accomplished with 1.5 doors (employing 3T reads circuit), or 1.75 doors (employing 4T reads circuit).
What Fig. 9 showed is the circuit that reads that current reasonable 4-point is shared 4T active photosensitive pixels, and on average each pixel has adopted 1.75 doors.We illustrate that with this two-layer or multilayer sensor devices of the present invention can adopt reading and sample circuit of current suitable standard.
What Figure 10 showed is an example of the simple two-sided three layers of sensor devices that directly the single-surface double-layer sensor devices are used for double-sided light sensitive and obtain, and wherein the front of Figure 10 (a) is one deck, and the back side is two-layer, and the front of Figure 10 (b) is two-layer, and the back side is one deck.This be equally three layers sensor devices than three layers of sensor devices of X3 of Foveon company easily and also change how a lot.Notice the difference of Figure 10 and Fig. 2.The photosensitive pixels of three colors is all squeezed on a face among Fig. 2, and has only two pixels among Figure 10 on a face, and another pixel is on another face.
Figure 11 shows is the single-surface double-layer sensor devices to be combined with the double-sided light sensitive mode and a kind of two-sided four layers of sensor devices of producing.This sensor devices of sampling can obtain orchid simultaneously at each image point, and is green, red and infrared four colors.Though color is more, level is also more, and it is still easy than three layers of sensor devices of X3 of Foveon company to make.
What Figure 12 showed is the example of the double-sided multi-layer sensor devices of three layers and four layers mixing.
What Figure 13 showed is two-layer and the example of the double-sided multi-layer sensor devices of four layers of mixing.
What Figure 14 showed is two-layer and the example of the double-sided multi-layer sensor devices of three layers of mixing.
What Figure 15 and Figure 16 showed is two-layer and the example of the double-deck sensor devices of single or double of one deck mixing.
We have seen the situation of a kind of degeneration of MULTILAYER COMPOSITE photosensitive pixels in Figure 12-16: when one of them of the compound photosensitive pixels of N layer when the empty pixel, so, the compound photosensitive pixels of N layer just is degenerated to the compound photosensitive pixels of (N-1) layer.Just shown that as Figure 15 and 16 some double-deck photosensitive pixels are degenerated to the situation of individual layer.When wherein two when being empty pixel, the compound photosensitive pixels of N layer just is degenerated to the compound photosensitive pixels of (N-2) layer, so analogizes.
When compound pixel middle level number is inconsistent, can regards the some of them layer as and comprise empty pixel (responding to empty look).Thereby the hybrid multilayer sensor devices is the special case of multilayer sensor devices, and promptly the compound pixel of some of them has comprised empty pixel.
These examples fully demonstrate the power of single-surface double-layer sensor devices and two-sided bilayer or multilayer sensor devices.With the technology combination of these two kinds of devices, can produce a series of brand-new colourful high-performance sensor devices.It needs to be noted, in a sensor devices more than three layers, be in the spectrum that the light sensitive diode of each aspect is responded to, must pairwise orthogonal (promptly not having public or intersection in theory).
Figure 17 (a) and Figure 17 (b) show is that a kind of square formation is arranged and the vertical view of the two-sided double-deck sensor devices of honeycomb arrangement, wherein FD two-layer shared electric capacity that reads about being.Certainly, if desired, two-layerly up and down can each read electric capacity with one, even respectively read circuit with one group.
The vertical view of two-sided bilayer multispectral (colour the adds infrared) sensor devices that the square formation that Figure 18 (a) shows is arranged, wherein FD is the two-layer up and down shared electric capacity that reads.The vertical view of two-sided bilayer multispectral (colour the adds infrared) sensor devices that the square formation that Figure 18 (b) shows is arranged, wherein FD is the two-layer up and down shared electric capacity that reads.This grand pixel unit of being made up of two compound pixels also can adopt 4-point illustrated in Figure 9 to share the circuit that reads of active photosensitive pixels.Different with the sensor devices of single-surface single-layer, shared four light sensitive diodes that read circuit among Figure 18 (b) are distributed on two faces.
Figure 19 shows is that a two-sided bilayer multispectral (colour adds infrared) sensor devices 8-point is shared or the shared cross-sectional view that reads circuit of 4-point (saved 3T or 4T reads circuit).What show here is a kind of extreme, and FD is common situation up and down.For two-sided bilayer multispectral (colour adds infrared) sensor devices, even sharing, the 4-point reads circuit, two selections are also arranged: four points of the first are from same, and its two or four points come naturally from different faces.In this figure, we have used another kind of method to improve the absorption efficiency of infrared light, and promptly in the behind of germanium or germanium-silicon layer, plating is with specular reflective material (as aluminium, silver or other cooperate good reflecting material with germanium or silicon person).
Figure 20 shows is that a two-sided bilayer multispectral (colour adds infrared) sensor devices 8-point is shared or the shared cross-sectional view that reads circuit of 4-point (saved 3T or 4T reads circuit).What show here is a kind of simple any FD obstructed situation up and down.When FD was obstructed up and down, all the situation of merchandiser face individual layer was the same end face or bottom surface so.
What Figure 21 showed is the situation of the sensor devices of the two-sided bilayer of a kind of simple making.When basic unit is opaque, so, two-layer up and down can obtaining with the single-surface single-layer sensor devices method for processing of twice of simple repetition.Device on two faces also can be independent fully.This is the simplest a kind of mode that obtains two-way sensor devices.
Figure 22 (a) and Figure 22 (b) show is the situation of a single-surface double-layer sensor devices when being respectively applied for positive sensitization and back side sensitization.Notice light sensitive diode centering two-layer among the figure, obtain more short wavelength's color from the near light sensitive diode of light source.
Figure 23 (a) and Figure 23 (b) show is the situation of a two-sided double-deck sensor devices when being respectively applied for positive sensitization and back side sensitization.Notice that light sensitive diode two-layer among the figure is right, when light source changes direction, the variation of color.(can be for bi-directional symmetrical referring to " multi-optical spectrum light-sensitive device and preparation method thereof " (Chinese application number: two-sided double-deck sensor devices 200810217270.2), generally speaking, when light source changes direction, cyan and yellow exchange, blue and red exchange, green constant.
The situation of the front and back of the two-sided double-deck sensor devices of grand pixel 3 the compound light sensitive diodes of employing of Figure 24 (a) and Figure 24 (b) (compound photosensitive pixels).When grand pixel comprises 3 points, adopt honeycomb arrangement usually.
Figure 25, Figure 26, Figure 27 are may realizing of other several two-sided double-deck sensor devices.These diagrams fully show the flexibility and the diversified characteristics of two-sided double-deck sensor devices.We for the discussion of compound diode, through reasonably changing, also are applicable to the situation of Figure 22 to Figure 27 in Fig. 3 to Figure 16.We sincerely come principle of specification with a spot of figure, rather than limit marrow of the present invention and category.
Figure 28 is the principle schematic of a sensitization door (Photo Gate).In above legend,, so, can obtain the realization and the conclusion of a lot of all fours if we will replace with sensitization door (Photo Gate) as the light sensitive diode (Photo Diode) of basic photosensitive pixels.
Embodiment
For ease of describing the present invention and explaining it and the difference of prior art, we now provide the definition of following noun: double-deck sensor devices, multilayer sensor devices, double-sided light sensitive device, two-way sensor devices.Wherein, it is two-layer that double-deck sensor devices is meant that photosensitive pixels physically is divided into, and each layer all contains the photosensitive pixels of responding to special spectrum.The multilayer sensor devices is meant two-layer above sensor devices, true X3 sensor devices as Foveon company.The double-sided light sensitive device is meant that sensor devices has two photosensitive surfaces, each face can both be at least sensitization on the direction.Two-way sensor devices is meant that sensor devices can be from sensitization on the direction of two (are mutually usually 180 degree), that is can both sensitization from the front and back of sensor devices.
A sensor devices can have bilayer or multilayer simultaneously, in two-sided and two-way these three characteristics one, two and all three characteristics.The present invention relates generally to single-surface double-layer sensor devices (shown in Figure 22 (a) and Figure 22 (b)), two-sided double-deck sensor devices (shown in Figure 23 (a) and Figure 23 (b)) and double-sided multi-layer sensor devices (as Figure 10-14).No matter be single-surface double-layer or two-sided bilayer or multilayer sensor devices, may be used to positive sensitization (shown in Figure 22 (a)), back side sensitization (shown in Figure 22 (b)), or two-way sensitization (as Figure 21 or shown in Figure 23).But, being used for different following times of radiation situation, the design of sensor devices is different.
The multi-optical spectrum light-sensitive device of the specific embodiment of the invention, comprise a basic unit, in described basic unit, be provided with a plurality of compound photosensitive pixels macrocells according to the predetermined pattern repeated arrangement, described compound photosensitive pixels macrocell comprises at least one compound photosensitive pixels, described compound photosensitive pixels is made up of at least two basic photosensitive pixels, described basic photosensitive pixels is along every layer of layered arrangement of direction of illumination, and in the two-layer at the most mode of one side, be distributed in the end face of basic unit, or bottom surface, or end face and bottom surface.It should be noted that, here just express the relative position on basic unit two sides with the notion of end face and bottom surface, and be not restriction to substrate surface absolute physical position, in the following description, used the notion of the front and back of the basic unit that relative light source position describes to express similar implication in addition.
At this, three notions have been proposed, compound photosensitive pixels macrocell, compound photosensitive pixels, with basic photosensitive pixels, wherein, basic photosensitive pixels is the photosensitive pixels that can not divide again on each layer, compound photosensitive pixels then is the combination of at least two basic photosensitive pixels, and the basic photosensitive pixels in the compound photosensitive pixels is arranged a basic photosensitive pixels with the arranged in form along the direction of illumination layering at each layer, as described above described in the description of drawings, basic photosensitive pixels can light sensitive diode or the sensitization door realize, when realizing that with the light sensitive diode form it is right that then compound photosensitive pixels forms compound light sensitive diode.Certainly, it should be noted that, each photosensitive pixels layer in the compound photosensitive pixels, arrange along light source irradiation direction (the normally normal direction of basic unit's photosensitive surface), but do not limit on the face that only is arranged in basic unit, if in the relative two sides with the basic unit of light source irradiation process, one side near light source is the basic unit front, one side away from light source is the basic unit back side, so, and each photosensitive pixels layer in the compound photosensitive pixels, can be all in the basic unit front, also can be all at the basic unit back side, perhaps respectively at the front and back of basic unit, but arrange two photosensitive pixels layers at most on a face.Sum up the distributing position and the quantitative relation of photosensitive pixels layer, for a light source irradiation direction, the distribution mode of photosensitive pixels layer can have [2,0], [0,2] (single-surface double-layer), [1,1] (two-sided bilayer), [1,2], [2,1], [2,2] (double-sided multi-layer).Wherein, last digit is the photosensitive pixels number of layers that is arranged in the basic unit front in the compound photosensitive pixels, and back one numeral is for being arranged in the photosensitive pixels number of layers at the basic unit back side in the compound photosensitive pixels.Compound photosensitive pixels macrocell then is the set that can rebuild the compound photosensitive pixels of colored minimum number, also claim grand pixel, (for example is square formation or honeycomb pattern arrangement mode with this compound photosensitive pixels macrocell by predetermined pattern, or repeated arrangement) repeated arrangement, thus can realize colored the reconstruction on the entire image plane.For double-deck multi-optical spectrum light-sensitive device, compound photosensitive pixels macrocell comprises at least two compound pixels usually.But for the double-sided multi-layer multi-optical spectrum light-sensitive device, macrocell can be single compound pixel.
Because a compound photosensitive pixels has polytype, and a plurality of compound photosensitive pixels that is arranged in the basic unit may have different types, makes sensor devices of the present invention have multiple form flexibly.From the angle of a compound photosensitive pixels, according to the number and the distribution of its basic photosensitive pixels, can comprise the compound photosensitive pixels of single-surface double-layer, two-sided two-layer compound photosensitive pixels, the compound photosensitive pixels of double-sided multi-layer.As previously mentioned, compound photosensitive pixels of so-called single-surface double-layer and two-sided two-layer compound photosensitive pixels, its basic photosensitive pixels all is two, and it is different just to distribute, and the basic photosensitive pixels in the compound photosensitive pixels of single-surface double-layer is the one side layered arrangement in basic unit; And the basic photosensitive pixels in the two-sided two-layer compound photosensitive pixels is to arrange on the two sides of basic unit.For the compound photosensitive pixels of double-sided multi-layer, its basic photosensitive pixels can be 3 or 4, owing to arrange two-layer photosensitive pixels at the most in basic unit one side, thereby basic photosensitive pixels at this moment must be the two sides that is distributed in basic unit, and wherein having one side at least is the layered arrangement of two basic photosensitive pixels.It should be noted that, a kind of special circumstances of compound photosensitive pixels are wherein to contain free pixel is arranged, this photosensitive pixels is responded to empty look in other words, at this moment, when for example a basic photosensitive pixels in the compound photosensitive pixels of single-surface double-layer is empty pixel, on sensitization validity, it is equivalent to the compound photosensitive pixels of a single-surface single-layer.
Because the eurypalynous characteristics of compound photosensitive pixels, make when pixel arrangement quite flexible, for example, on a pixel location of basic unit, arrange the compound photosensitive pixels of single-surface double-layer, and can arrange two-sided two-layer compound photosensitive pixels at its close position, and can arrange the compound photosensitive pixels of double-sided multi-layer in another adjacent locations, in a word, can arrange dissimilar compound photosensitive pixels at the different pixel locations of basic unit, based on these characteristics, especially, sensor devices when compound photosensitive pixels all in the basic unit is same type defines according to compound photosensitive pixels type, for example, when compound photosensitive pixels all in the basic unit is the compound photosensitive pixels of single-surface double-layer, the sensor devices of corresponding formation is called the single-surface double-layer sensor devices, and the sensor devices that above-mentioned other two kinds of compound photosensitive pixels form is then corresponding to be called two-sided double-deck sensor devices, or the double-sided multi-layer sensor devices.It should be noted that, as aforementioned, owing to may contain in the compound photosensitive pixels free pixel is arranged, thereby make the compound photosensitive pixels of partial-pixel position of basic unit that degeneration take place, for example in a single-surface double-layer sensor devices, if a compound photosensitive pixels contains an empty pixel, then in fact the compound photosensitive pixels of this single-surface double-layer deteriorates to the photosensitive pixels of a single-surface single-layer, thereby make on details, compound photosensitive pixels in single-surface double-layer sensor devices and not exclusively be the compound photosensitive pixels of single-surface double-layer, but see on the whole, we still classify as the single-surface double-layer sensor devices with the sensor devices of this situation, and are special, can claim that also it is a kind of single-surface double-layer sensor devices of mixing, accordingly, also there are the two-sided double-deck sensor devices of mixing and the double-sided multi-layer sensor devices of mixing.
Basic photosensitive pixels in the compound photosensitive pixels generally is arranged to respond to the different spectral coverage in visible light or visible light and the infrared light sensitization, for example, can be by a spectral coverage of the pairwise orthogonal of each self-induction visible light of the basic photosensitive pixels in the compound photosensitive pixels or visible light and infrared light, by the different spectral coverage of the induction of the basic photosensitive pixels in each compound photosensitive pixels in the compound photosensitive pixels macrocell and compound photosensitive pixels spectrum, the spectral information that all compound photosensitive pixels of compound photosensitive pixels macrocell are responded to combines and comprises that RGB or CMYK are colored to rebuild necessary spectral information.
Wherein, the spectrum of responding to from the nearest basic photosensitive pixels of light source in the compound photosensitive pixels comprises the sky look, blueness, and green, cyan, white and white add infrared colour.The spectrum of responding to from light source basic photosensitive pixels farthest in the compound photosensitive pixels comprises the sky look, green, and redness, yellow, white, redness adds infrared colour, and yellow adds infrared colour and white adds infrared colour.
More than be the explanation how photosensitive pixels among the present invention is arranged, the processing that the multi-optical spectrum light-sensitive device of the specific embodiment of the invention is described below realizes.According to the material difference of basic unit, for the realization of single-surface double-layer multi-optical spectrum light-sensitive device, a kind of way is:
Get the N basic unit (as Fig. 5 (a)) of a silicon crystal, a pixel location on this N basic unit one side, depth requirements according to color, insert by the P impurity that certain depth is done to basic unit inside in this pixel location surface, form a P doped layer, this P doped layer is a photosensitive layer of compound photosensitive pixels, has also promptly formed a basic photosensitive pixels in the compound photosensitive pixels.Then the N impurity of doing another depthkeeping degree at this P doped layer is inserted, be formed on the N doped layer in the P doped layer, this N doped layer is another photosensitive layer of compound photosensitive pixels, also promptly formed another the basic photosensitive pixels in the compound photosensitive pixels, at this moment, the compound photosensitive pixels of this single-surface double-layer is that composite junction by P-N-P forms.
Another kind of way is, get the P basic unit (as Fig. 5 (b)) of a silicon crystal, a pixel location on this P basic unit one side, depth requirements according to color, insert by the N impurity that certain depth is done to basic unit inside in this pixel location surface, form a N doped layer, this N doped layer is a photosensitive layer of compound photosensitive pixels, has also promptly formed a basic photosensitive pixels in the compound photosensitive pixels.Then the P impurity of doing another depthkeeping degree at this N doped layer is inserted, be formed on the P doped layer in the N doped layer, this P doped layer is another photosensitive layer of compound photosensitive pixels, also promptly formed another the basic photosensitive pixels in the compound photosensitive pixels, at this moment, the compound photosensitive pixels of this single-surface double-layer is that composite junction by N-P-N forms.
Foregoing description is the making of a compound photosensitive pixels, making for other the compound photosensitive pixels on basic unit's photosurface, its processing mode is identical, and just at different pixel locations, the degree of depth that impurity is inserted is according to the wavelength decision of the spectrum of the color of the desired induction of corresponding pixel and different.
The realization of two-sided double-deck multi-optical spectrum light-sensitive device:
Get the N basic unit (as Fig. 4 (a)) of a silicon crystal, the pixel of front surface is classified by required color, and the P that each class pixel is done certain depth by the color depth demand mixes.Equally, also the pixel at the back side is classified by required color, and the P that each class pixel is done certain depth according to the depth requirements of color mixes.The degree of depth that P impurity is inserted is by the wavelength decision of the spectrum of desired induction.
Another kind of more superior way is, gets the P basic unit (as Fig. 4 (b)) of a silicon crystal, and by required color classification, and the N that each class pixel is done certain depth by the color depth demand mixes with the pixel of front surface.Equally, also the pixel at the back side is pressed required color classification, and the N that each class pixel is done certain depth according to the depth requirements of color mixes.The degree of depth that N impurity is inserted is by the wavelength decision of the spectrum of desired induction.The two-sided two-layer compound photosensitive pixels that the two-sided two-layer compound photosensitive pixels that this N-P-N composite junction forms forms than top P-N-P composite junction is superior to be because N mobile strong than P.
The realization of double-sided multi-layer multi-optical spectrum light-sensitive device:
Get the N or the P basic unit (as Fig. 9-14) of a silicon crystal,, make one or two photosensitive pixels layer,, make one or two photosensitive pixels layer the mode of the back side with single-surface double-layer or individual layer with the mode of front surface with single-surface double-layer or individual layer.The difference of arranging according to these, the composite junction that constitutes a compound photosensitive pixels of double-sided multi-layer comprises N-P-N, P-N-P, N-P-N-P, P-N-P-N, multiple situations such as N-P-N-P-N and P-N-P-N-P.
After obtaining compound photosensitive pixels, if desired photosignal is read, also need layout to read circuit and other control circuits.The layout that reads circuit and other control circuit still is that active pixel (Active Pixel) designs according to passive pixel (Passive Pixel), if select the initiatively design of pixel for use, so, except light sensitive diode as Fig. 3 (a), also have standard time sequence and the control circuit of not indicating among circuit and the many figure that read as shown in Figure 7.
For the photosensitive pixels layer that is used for responding to infrared light, can be at the back side of its correspondence position, promptly this is used to respond to the photosensitive pixels layer lower surface of infrared light, and regrowth germanium or Si Ge crystal layer are to improve the absorption efficiency of infrared spectrum.In addition, also can be after grown germanium or Si Ge crystal, be provided with again and utilize aluminium matter, silver or direct reflection plated film that other materials is made, so that will there not be absorbed infrared photon to reflect back, thereby absorbed once more by infrared photosensitive pixels layer.The intensity of reflection decides according to the thickness and the absorptivity of infrared photosensitive pixels layer, in order to avoid other pixel is produced unnecessary interference.
If be used for two-way sensitization, and adopt " multi-optical spectrum light-sensitive device and preparation method thereof " (Chinese application number: 200810217270.2) described pixel choosing to or the subregion choosing to mode, so, some pixel class or pixel region in the front are coated the shading plated film, and overleaf other pixel class or pixel region are coated the shading plated film.
In above realization, we can replace light sensitive diode (PhotoDiode) with sensitization door (Photo Gate) fully, thereby obtain the single-surface double-layer based on the sensitization door, two-sided bilayer and double-sided multi-layer sensor devices.
Because the single-surface double-layer that the present invention obtains, two-sided bilayer, or the double-sided multi-layer sensor devices provides redundant color information, therefore, for a lot of costs and all very crucial application (for example mobile phone) of size, the compound pixel of part can comprise the sky pixel, thus the mixing single-surface double-layer that obtains degenerating, mix two-sided bilayer and mix the double-sided multi-layer sensor devices.
The present invention both can make of technology and the technology of CCD, also can make of technology and the technology of CMOS.Because the hypersensitivity that the present invention brings, basic pixel promptly can also can adopt the mode of active photosensitive pixels (Active Pixel) to read with the mode of passive photosensitive pixels (Passive Pixel).These characteristics make the present invention and existing ripe semiconductor sensitive chip manufacturing technology merge fully, thereby can be widely used.The present invention is in performance that significantly improves sensitive chip and function, because the raising of yields also can reduce or not increase at least cost.
The present invention is by optimally being arranged in the basic photosensitive pixels in the compound photosensitive pixels on two degree of depth, and formation single-surface double-layer, two-sided bilayer, polytype with the double-sided multi-layer sensor devices, greatly expand the kind of sensitive chip, and realized overlapping and integrated on one chip of infrared sensitization and color sensitive first physically.
Also do nature and slight accommodation (as adding filter coating) on its basis according to production method provided by the invention, just can pass through single-surface double-layer, two-sided bilayer, the form of list or double-sided multi-layer forms (empty look, white), (blueness, yellow), (blueness, green), (green, redness), (blueness, red), (blueness, red+infrared), (blueness, yellow+infrared), (empty look, white+infrared), (white+infrared), bilayer or MULTILAYER COMPOSITE photosensitive pixels that visible light that (orchid/green/red/green grass or young crops/Huang/white, infrared) or the like is corresponding all or visible light add quadrature in the infrared light.
The present invention is by the application of sensitization modes such as aforementioned two-sided, two-way, double-deck and multilayer, thereby can be used for two-way photosensitive system with single sensor devices, greatly reduces system cost, and is reduced in size, reduces system complexity; And make some need in same system, receive the application of multispectral or multi-direction the multispectral signal of both direction (or from), become possibility.For example, be used to check the pill camera of patient's gastrointestinal system at present, only the photograph head be housed at one.For obtaining the image of a certain position of gastrointestinal system, may need shooting repeatedly, thereby bring great misery and huge economic cost to patient.For this reason, then need to improve the coverage of single shot, and at the other end of pill camera the photograph head is housed also if desired, adopt the prior art means, just must in a very little space, adorn two cover systems, bigger difficulty is arranged in the realization.And employing the present invention, only needing increases a camera lens in the other end, and its sensitive chip still just adopts a slice, less demanding to the space not only, and also Financial cost also is lower than the cost of two cover systems.In addition, the present invention can monitor former and later two directions on a monitoring camera, for the 3G mobile that former and later two cameras much are housed, adopt the present invention, an available bidirectional camera shooting head replaces, and switches the switching that realizes the front and back scene by electronics or machinery.For the supervisory control system of some luxurious hotels, it just can no longer need two cover supervisory control systems to monitor both direction respectively, and only need can finish necessary monitoring once the cover supervisory control system if the scene at the two ends of monitoring corridor adopts the present invention.
The mode that usefulness provided by the invention is integrated on same (CMOS or CCD semiconductor) device, realizes sensitization colored and infrared the time, and coloured image and infrared image are overlapping on the locus.Novel like this sensor devices has greatly been expanded the dynamic range of sensor devices, thereby satisfies automobile, high performance requirements in the fields such as security protection. moreover, it is used for undersized color sensitive device, and the camera as mobile phone is used also can improve image quality significantly.
Though the present invention is described preferably to be embodied as example, this announcement should not be understood that to have restricted.Be skillful in the people that image sensor devices (as semiconductor chip) is pored over this paper again for those, many variations and performance all are possible, and these variations and performance still drop on category of the present invention, as long as they belong to true essentials of the present invention and simple change.
Claims (22)
1. multi-optical spectrum light-sensitive device, it is characterized in that, comprise a basic unit, in described basic unit, be provided with a plurality of compound photosensitive pixels macrocells according to the predetermined pattern repeated arrangement, described compound photosensitive pixels macrocell comprises at least one compound photosensitive pixels, described compound photosensitive pixels is made up of at least two basic photosensitive pixels, described basic photosensitive pixels is along every layer of layered arrangement of direction of illumination, and in the two-layer at the most mode of one side, be distributed in the end face of basic unit, or bottom surface, or end face and bottom surface.
2. multi-optical spectrum light-sensitive device as claimed in claim 1, it is characterized in that, basic photosensitive pixels in the described compound photosensitive pixels comprises 2, two-layer layout is divided in end face or bottom surface in basic unit, form the compound photosensitive pixels of single-surface double-layer, or be arranged in the end face and the bottom surface of basic unit, form two-sided two-layer compound photosensitive pixels.
3. multi-optical spectrum light-sensitive device as claimed in claim 2 is characterized in that, the compound photosensitive pixels in the described basic unit is the compound photosensitive pixels of single-surface double-layer, thereby makes described multi-optical spectrum light-sensitive device constitute the single-surface double-layer sensor devices.
4. as claim 2 or 3 described multi-optical spectrum light-sensitive devices, it is characterized in that, the compound photosensitive pixels of described single-surface double-layer is by mixing (P doping) by be P earlier in the basic unit of a N silicon, and then on the layer that P mixes, and is N and mixes the N-P-N composite junction that the back constitutes and form.
5. as claim 2 or 3 described multi-optical spectrum light-sensitive devices, it is characterized in that, the compound photosensitive pixels of described single-surface double-layer is by mixing (N doping) by be N earlier in the basic unit of a P silicon, and then on the layer that N mixes, and is P and mixes the P-N-P composite junction that the back constitutes and form.
6. multi-optical spectrum light-sensitive device as claimed in claim 2 is characterized in that, the compound photosensitive pixels in the described basic unit is two-sided two-layer compound photosensitive pixels, thereby makes described multi-optical spectrum light-sensitive device constitute two-sided double-deck sensor devices.
7. as claim 2 or 6 described multi-optical spectrum light-sensitive devices, it is characterized in that described two-sided two-layer compound photosensitive pixels is by mixing the P-N-P composite junction that (P doping) obtain and form by all being P in the end face of the basic unit of a N silicon and bottom surface.
8. as claim 2 or 6 described multi-optical spectrum light-sensitive devices, it is characterized in that described two-sided two-layer compound photosensitive pixels is by mixing the N-P-N composite junction that (N doping) obtain and form by all being N in the end face of the basic unit of a P silicon and bottom surface.
9. multi-optical spectrum light-sensitive device as claimed in claim 1, it is characterized in that, basic photosensitive pixels in the described compound photosensitive pixels comprises 3 or 4, wherein two-layer layout is divided in two end face or bottom surfaces in basic unit, remaining basic photosensitive pixels is divided one deck or two-layer layout at the bottom surface or the end face of basic unit, forms the compound photosensitive pixels of double-sided multi-layer.
10. multi-optical spectrum light-sensitive device as claimed in claim 9 is characterized in that, the compound photosensitive pixels in the described basic unit is the compound photosensitive pixels of double-sided multi-layer, thereby makes described multi-optical spectrum light-sensitive device constitute the double-sided multi-layer sensor devices.
11. as claim 9 or 10 described multi-optical spectrum light-sensitive devices, it is characterized in that, the compound photosensitive pixels of described double-sided multi-layer is by mixing by all being P in the end face of the N of silicon basic unit and bottom surface, and mix that layer is that N mixes and the P-N-P that obtains at P again, N-P-N-P, P-N-P-N, the composite junction of N-P-N-P-N forms.
12. as claim 9 or 10 described multi-optical spectrum light-sensitive devices, it is characterized in that, the compound photosensitive pixels of described double-sided multi-layer is by mixing by all being N in the end face of the P of silicon basic unit and bottom surface, and mix layer at N again and be P and mix the N-P-N that obtains, N-P-N-P, P-N-P-N, or the composite junction of P-N-P-N-P forms.
13. multi-optical spectrum light-sensitive device as claimed in claim 1, it is characterized in that, a spectral coverage of the pairwise orthogonal of each self-induction visible light of the basic photosensitive pixels in the described compound photosensitive pixels or visible light and infrared light, the spectral information that all compound photosensitive pixels of described compound photosensitive pixels macrocell are responded to combine and comprise RGB or the necessary spectral information of the colored reconstruction of CMYK.
14., it is characterized in that the spectrum of responding to from the nearest basic photosensitive pixels of light source in the described compound photosensitive pixels comprises the sky look as any described multi-optical spectrum light-sensitive device of claim 1-13, blueness, green, cyan, white and white add infrared colour.
15. as any described multi-optical spectrum light-sensitive device of claim 1-14, it is characterized in that, the spectrum of responding to from light source basic photosensitive pixels farthest in the described compound photosensitive pixels comprises the sky look, green, redness, yellow, white, redness adds infrared colour, and yellow adds infrared colour and white adds infrared colour.
16. as any described multi-optical spectrum light-sensitive device of claim 1 to 15, it is characterized in that the lower surface that the bottom of described compound photosensitive pixels unit is used to respond to the basic photosensitive pixels of infrared light is also grown better Si Ge crystal layer of pair infrared Absorption or Germanium crystal layer are arranged.
17. as the described multi-optical spectrum light-sensitive device of claim 1-16, it is characterized in that, the described bottom that is used to respond to the basic photosensitive pixels of infrared light, also plating is provided with the direct reflection plated film.
18., it is characterized in that described compound photosensitive pixels is sampled with active mode and formed initiatively photosensitive pixels (Active Pixel) as any described multi-optical spectrum light-sensitive device of claim 1-17.
19., it is characterized in that described compound photosensitive pixels is sampled with passive mode and formed passive photosensitive pixels (Passive Pixel) as any described multi-optical spectrum light-sensitive device of claim 1-17.
20., it is characterized in that the basic photosensitive pixels in the described compound photosensitive pixels is light sensitive diode or sensitization door as any described multi-optical spectrum light-sensitive device of claim 1-19.
21., it is characterized in that the sensitization mode of described multi-optical spectrum light-sensitive device comprises positive sensitization as any described multi-optical spectrum light-sensitive device of claim 1-20, back side sensitization, or two-way sensitization mode, described two-way sensitization mode comprise timesharing choosing to, subregion choosing to, or the pixel choosing is to mode.
22. as any described multi-optical spectrum light-sensitive device of claim 1-21, it is characterized in that described predetermined pattern comprises the repeated arrangement of compound pixel, square formation is arranged, or honeycomb pattern is arranged.
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| WO2012174752A1 (en) * | 2011-06-24 | 2012-12-27 | 博立码杰通讯(深圳)有限公司 | Multi scene depth photo sensitive device, system thereof, scene depth expanding method, and optical imaging system |
| EP2725617A1 (en) * | 2011-06-24 | 2014-04-30 | Boly Media Communications (Shenzhen) Co., Ltd. | Hybrid multi-spectrum photosensitive pixel group, photosensitive device, and photosensitive system |
| CN103995581A (en) * | 2013-02-18 | 2014-08-20 | 义明科技股份有限公司 | Optical sensing device and image sensing device |
| CN104010122A (en) * | 2014-06-13 | 2014-08-27 | 广东欧珀移动通信有限公司 | Light sensing chip, camera and electronic product |
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| US4514755A (en) * | 1983-07-08 | 1985-04-30 | Fuji Photo Film Co., Ltd. | Solid-state color imager with two layer three story structure |
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| CN101345248A (en) * | 2007-07-09 | 2009-01-14 | 博立码杰通讯(深圳)有限公司 | Multi-optical spectrum light-sensitive device and preparation thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2011150551A1 (en) * | 2010-06-01 | 2011-12-08 | 博立码杰通讯(深圳)有限公司 | Multispectral photosensitive device |
| US9184204B2 (en) | 2010-06-01 | 2015-11-10 | Boly Media Communications (Shenzhen) Co., Ltd. | Multi-spectrum photosensitive device |
| WO2012174752A1 (en) * | 2011-06-24 | 2012-12-27 | 博立码杰通讯(深圳)有限公司 | Multi scene depth photo sensitive device, system thereof, scene depth expanding method, and optical imaging system |
| EP2725617A1 (en) * | 2011-06-24 | 2014-04-30 | Boly Media Communications (Shenzhen) Co., Ltd. | Hybrid multi-spectrum photosensitive pixel group, photosensitive device, and photosensitive system |
| JP2014520397A (en) * | 2011-06-24 | 2014-08-21 | ボリーメディアコミュニケーションズ（シンチェン）カンパニーリミテッド | Multi-depth-of-field photosensitive device, system, depth-of-field expansion method and optical imaging system |
| EP2725617A4 (en) * | 2011-06-24 | 2015-02-25 | Boly Media Comm Shenzhen Co | Hybrid multi-spectrum photosensitive pixel group, photosensitive device, and photosensitive system |
| RU2609106C2 (en) * | 2011-06-24 | 2017-01-30 | Боли Медиа Коммуникейшнз (Шэньчжэнь) Ко., Лтд | Light-sensitive device with multiple depth of focus, system, method of expanding depth resolution of focus and optical imaging system |
| CN103995581A (en) * | 2013-02-18 | 2014-08-20 | 义明科技股份有限公司 | Optical sensing device and image sensing device |
| CN103995581B (en) * | 2013-02-18 | 2017-03-01 | 义明科技股份有限公司 | Optical sensing device and image sensing device |
| CN104010122A (en) * | 2014-06-13 | 2014-08-27 | 广东欧珀移动通信有限公司 | Light sensing chip, camera and electronic product |
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