CN101806961A - Method for manufacturing hollow transmission type fabry-perot tunable filter - Google Patents
Method for manufacturing hollow transmission type fabry-perot tunable filter Download PDFInfo
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- CN101806961A CN101806961A CN201010108642A CN201010108642A CN101806961A CN 101806961 A CN101806961 A CN 101806961A CN 201010108642 A CN201010108642 A CN 201010108642A CN 201010108642 A CN201010108642 A CN 201010108642A CN 101806961 A CN101806961 A CN 101806961A
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- 238000005516 engineering process Methods 0.000 description 6
- 239000002033 PVDF binder Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
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- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical compound FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 3
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a hollow transmission type fabry-perot tunable filter, which comprises the following steps of: sequentially forming a lower-medium high-reverse film layer and a hollow lower thin film electrode layer on a lower substrate; modifying surface energy to the upper surface of at least one of the lower-medium high-reverse film layer and the lower thin film electrode layer, so that the surface energy of the hollow lower thin film electrode layer is higher than that of the lower-medium high-reverse film layer; selectively depositing piezoelectric polymer on a thin film electrode to be formed into a polymer thin film layer; evaporating on the polymer thin film layer to be formed into an upper thin film electrode layer; and sequentially covering an upper-medium high-reverse film layer and an upper substrate on the upper thin film electrode layer. Due to the characteristic of the piezoelectric polymer, the method can manufacture the hollow transmission type fabry-perot (F-P) tunable filter, forms into a required inner cavity pattern when manufacturing the polymer thin film layer, is simple and practicable, can not damage the polymer thin film layer, and can better guarantee the piezoelectric characteristic of the polymer thin film layer.
Description
Technical field
The invention belongs to thin polymer film device technology field, particularly utilize surface energy modification to prepare the method for hollow transmission type fabry-perot tunable (F-P) wave filter.
Background technology
For satisfying the needs of applications such as modern optical communication, optical information processing, optoelectronic device just develops towards miniaturization, integrated direction.External a few company has released the tunable optic filter based on the liquid crystal electrooptical effect, but because response speed is slow, temperature dependency is strong and the liquid crystal media state that flows own, makes its spectral tuning narrow range, and practical application is very limited.And the inorganic material lithium niobate is very little because of its electrooptical effect, does not reach requirement of actual application.
Polymeric material is after inorganic material and organic molecule, is developed the brand-new material that is applied to photoelectric field, have response speed fast, see through wide waveband, preparation is simple, with low cost, is easy to incomparable advantages such as integrated.Aspect the synthetic and preparation of devices of material, polymkeric substance not only kind is many, is easy to MOLECULE DESIGN film forming by all means, and good chemistry, mechanical property and thermal stability are arranged.Therefore, polymer thin-film material, and can be realized not having substrate and having certain flexibility in the superiority aspect processing, film forming, the MOLECULE DESIGN with it, makes it become very promising functional material in the information industry.
Fabry-Perot (F-P) chamber type light filter is made of two high reflection mirrors parallel to each other, keeps certain intervals between the catoptron.Behind light incident FP chamber, between two catoptrons, repeatedly reflect to form the multiple-beam interference phenomenon.By regulating the optical range between two minute surfaces, the light of specific wavelength is selected by cavity, and the light of its all band then is blocked.The principle of work of tunable fabry-perot chamber (F-P) wave filter is the optical path difference nd (product of refractive index and physical thickness) that changes the F-P chamber by electric field action, realizes the purpose of wavelength tuning.Non-linear electro-optic polymer film is under electric field action, and refractive index changes; And piezoelectric polymer thin-film has the electrostriction effect, produces strain under electric field action.The former has that operating voltage is low, modulation effect and advantage such as field intensity is linear, response speed is fast, but also has problem such as the unavoidable insertion loss of modulation range finite sum simultaneously.Especially in current near infrared, middle tunable IR wave filter demand, make air even more important as the application of the F-P cavity filter of medium in the chamber in fields such as military affairs and aerological soundings.Any device of modulating by the change refractive index all can not be made hollow type; And that the change of piezoelectric thickness in electric field can only change the chamber in F-P chamber is long, and does not serve as medium in the chamber.(CN?1456923A；US?2002/0146567A1)
With respect to inorganic piezoelectric material, the electrostrictive property of piezopolymer remarkable many [F.Xia, Z.Y.Cheng, H.S.Xu, H.F.Li, Q.M.Zhang, et al.Belfield.HighElectromechanical Responses in a Poly (vinylidenefluoride-trifluoroethylene-chlorofluoroethylen e) Terpolymer, Adv.Mater.2002,14,21,1574-1577.].Research at present is maximum, and that most widely used is copolymer p (VDF-TrFE), terpolymer P (VDF-TrFE-CTFE) and P (VDF-TrFE-CFE), has this quasi-copolymer film of report can reach 8% in the strain maximum of direction of an electric field.
Medium high-reflecting film and membrane electrode all are that so we can be equipped with mask on work rest, and mask is according to required graphic designs by the Vacuum Coating method preparation.And the solwution method film forming is a big advantage of polymkeric substance, can help the large tracts of land film forming again when reducing preparation cost.The polymer film forming mode is a lot, widespread usage be hot pressing, casting, hydrostomia and spin coating, preceding two kinds are mainly the above film preparations of millimeter level, and be used for the wave filter micron order below film by after dual mode.And hydrostomia and spin-coating film technology, if rough figure is arranged on substrate, will be greatly to the thin film surface planeness influence.It is by solution center section to be wiped (D.-Y.Jeong based on the F-P chamber of the hollow type of PVDF class piezopolymer that report is arranged, Y.H.Ye, and Q.M.Zhang.Electrical tunable Fabry-Perot interferometer using a poly (vinylidenefluoride-trifluoroethylene-chlorofluoroethylen e) terpolymer, Appl.Phys.Lett.2004,85,21,4857-4859.), perhaps obtain required figure by reactive ion etching.First method will be owing to will make the damage of pattern edge film in the wiping process, can not obtain practical application, and adopt the method for reactive ion etching not only to increase preparation technology, simultaneously also increased the etching difficulty at the relatively poor relatively thin polymer film of heat resistance, so cause the damage of thin polymer film easily, reduce piezoelectric property.
Summary of the invention
The invention provides a kind of technology and simply, do not damage the method for preparing hollow transmission type fabry-perot tunable (F-P) wave filter of polymer film layer.
A kind of method for preparing the hollow transmission type fabry-perot tunable filter comprises the steps:
1) the following mea layers of medium high-reflecting film layer and hollow under the upper surface of infrabasal plate forms successively;
In described down medium high-reflecting film layer and the following mea layers at least the upper surface of one deck make down the surface energy of mea layers be higher than the surface energy of medium high-reflecting film layer down through surface energy modification;
2) piezopolymer optionally is deposited on down on the mea layers, forms polymer film layer;
3) go up by mask evaporation upper film electrode layer (102) at polymer film layer (101), form hollow transmission type fabry-perot tunable filter the latter half;
4) go up medium high-reflecting film layer (106) on the evaporation at upper substrate (107), form hollow transmission type fabry-perot tunable filter the first half;
5) the upper film electrode layer (102) of hollow transmission type fabry-perot tunable filter the latter half is aimed at, compressed with the last medium high-reflecting film layer (106) of hollow transmission type fabry-perot tunable filter the first half, and fix by uv-exposure glue at the outward flange of mea layers (102) and last medium high-reflecting film layer (106) surface of contact, form the hollow transmission type fabry-perot tunable filter.
Wherein: step 1) can be following technical scheme: evaporation forms medium high-reflecting film layer down on infrabasal plate, described medium high-reflecting film layer is down carried out surface energy modification (reducing the surface energy of medium high-reflecting film layer upper surface down), and evaporation forms mea layers down on the following medium high-reflecting film layer after the surface energy modification.To form following mea layers be whether distinguish by the coverage of mask plate be the graphics field that needs to form mea layers to evaporation on the following medium high-reflecting film layer after the surface energy modification.
Step 1) also can be following technical scheme: medium high-reflecting film layer, following mea layers under evaporation on the infrabasal plate forms successively, described mea layers is down carried out surface energy modification (increasing the surface energy of mea layers upper surface).To form mea layers down be whether distinguish by the coverage of mask plate be the graphics field that needs to form mea layers to evaporation on following medium high-reflecting film layer.
Step 1) can also be following technical scheme: evaporation forms medium high-reflecting film layer down on infrabasal plate, described medium high-reflecting film layer is down carried out surface energy modification (reducing the surface energy of medium high-reflecting film layer upper surface down), evaporation forms mea layers down on the following medium high-reflecting film layer after the surface energy modification, and described mea layers is carried out surface energy modification (increasing the surface energy of mea layers upper surface down).To form following mea layers be whether distinguish by the coverage of mask plate be the graphics field that needs to form mea layers to evaporation on the following medium high-reflecting film layer after the surface energy modification.
The method of described surface energy modification comprises: methods such as oxygen plasma bombardment, solvent processing, surface chemistry grafting, different surfaces energy material osmosis.
Step 2) in piezopolymer optionally being deposited on down on the mea layers is method by spin coating or hydrostomia.
Step 3) is steamed to cross on polymer film layer and is formed the upper film electrode layer, and whether also distinguish by the coverage of mask plate is the graphics field that needs to form the upper film electrode layer.
Described vacuum coating technology comprises: thermal evaporation, electron beam evaporation, magnetron sputtering, ion assisted deposition or the like.
Described piezopolymer is mainly the piezopolymer of Kynoar (PVDF) series, comprises the PVDF homopolymer; The multipolymer such as the P (VDF-TrFE) of vinylidene and other fluorinated ethylenes; The terpolymer of vinylidene and other two kinds of fluorinated ethylenes such as P (VDF-TrFE-CTFE), P (VDF-TrFE-CFE), P (VDF-TrFE-HFE), P (VDF-TrFE-CDFE) etc.Wherein: CTFE is that chlorotrifluoroethylene, CFE are that fluorine vinyl chloride, HFE are that hexafluoropropylene, CDFE are two fluorine vinyl chloride.
The present invention utilizes surface energy modification to prepare the method for hollow transmission type fabry-perot tunable filter, be by in described down medium high-reflecting film layer and the following mea layers at least the upper surface of one deck pass through surface energy modification, make down the surface energy of mea layers be higher than the surface energy of medium high-reflecting film layer down, because with respect to mineral compound and metal, the surface energy of piezopolymer was just smaller originally, PVDF class piezopolymer generally has the critical surface tension of 20-30mN/m, and the fluorine atom on the piezopolymer strand is many more, surface energy is just low more, therefore piezopolymer is difficult to attached on the low-surface-energy substrate, instantly the surface energy of mea layers is higher than when the surface energy of medium high-reflecting film layer arrives to a certain degree down, piezopolymer will be non-cohesive at the upper surface that descends medium high-reflecting film layer attached to the upper surface that descends mea layers, in the preparation polymer film layer, just form needed inner chamber figure like this.Utilize this specific character of piezopolymer, can prepare hollow transmission type fabry-perot tunable (F-P) wave filter, this method is simple for process, does not damage polymer film layer, can guarantee the piezoelectric property of polymer film layer preferably.
Description of drawings
Fig. 1 is the prepared F-P Filter Structures synoptic diagram of the present invention.
Embodiment
Embodiment 1
On an infrabasal plate 105 with optical quality, according to the requirement of centre wavelength and reflectivity, utilize medium high-reflecting film layer 104 under the evaporation of electronics chamber, descending medium high-reflecting film layer 104 to select refractive index for use in this example is 2.18 TiO
2With refractive index be 1.45 SiO
2, structure is (HL) ^4, the outermost layer film is SiO
2Following mea layers 103 is selected Al, SiO in the present embodiment
2Surface energy and the surface energy of Al close.Before evaporating Al forms following mea layers 103, earlier following medium high-reflecting film layer 104 is carried out surface energy treatments, in the present embodiment, we adopt and are being coated with low surface energy polymeric film (its surface energy generally will be lower than the surface energy of the piezopolymer that is used to form thin polymer film 101, and the effect of the selective deposition when forming thin polymer film 101 can be relatively good like this) in advance on the medium high-reflecting film layer 104 down.In the present embodiment, we are coated with dimethyl silicone polymer (PDMS), make its curing, thickness be greater than 100 μ m in 2 hours 80 ℃ of heating and make it be easy to peel off.Dimethyl silicone polymer and monomer carefully peel after the cooling, owing to the dimethyl silicone polymer film characteristics can monoblock peel off, but at the interface, can to a certain degree be penetrated into down the top layer of medium high-reflecting film layer 104.This infiltration that is brought by molecular thermalmotion without any influence, but can change the surface energy of medium high-reflecting film layer 104 down to the optical property of following medium high-reflecting film layer 104 as thin as a wafer significantly.Because the big I of solid surface energy is quantitatively compared by the contact angle of particular solution, contact angle is big more, and solid surface energy is more little.The surface energy of metal and inorganic medium will be higher than organic polymer material.The deionized water contact angle data of each film see the following form in the present embodiment:
| Film system | Polymer film layer | Following mea layers | The surface energy modification agent | Following medium high-reflecting film layer | Following medium high-reflecting film layer after the surface energy modification |
| Material therefor | ??P(VDF-TrFE)??55/45mol％ | ??Al | ??PDMS | ??SiO 2 | ??SiO 2??(PMDS) |
| The deionized water contact angle/(°) | ??95 | ??89 | ??112.30 | ??80 | ??98 |
SL2008 contact angle instrument by the development of Shanghai Solon Information technology company limited is measured, the deionized water contact angle of the following medium high-reflecting film layer 104 before the modification is 80 °, the deionized water contact angle of the following medium high-reflecting film layer after the surface energy modification increases to 98 °, surface energy significantly reduces, and is lower than the surface energy of mea layers 103 (contact angle of deionized water is 90 °) down.Because surface energy is high more, easy more wetting by lip-deep liquid institute, also easy being attached more just.Therefore, when spin coating PVDF class piezopolymer formed polymer film layer 101, piezopolymer meeting selective deposition was on following mea layers 103.Thin polymer film 101 has ideally duplicated the figure of time mea layers 103, forms the cavity of hollow type.
On polymer film layer 101, pass through mask evaporation upper film electrode layer 102, medium high-reflecting film layer 106 on evaporation on the upper substrate 107, the material of upper substrate 107 is identical with infrabasal plate 105, and thickness is thinner, and the film system of last medium high-reflecting film layer 106 is in full accord with following medium high-reflecting film layer 104.Upper film electrode layer 102 is aimed at, compressed with last medium high-reflecting film layer 106, and fix by uv-exposure glue, form the hollow transmission type fabry-perot tunable filter at the mea layers 102 and the outward flange of last medium high-reflecting film layer 106 surface of contact.
Embodiment 2
On an infrabasal plate 105 with optical quality, according to the requirement of centre wavelength and reflectivity, utilize medium high-reflecting film layer 104 under the evaporation of electronics chamber, the outermost material of descending medium high-reflecting film layer 104 in the present embodiment also is SiO
2, following mea layers 103 is selected ITO in the present embodiment.The preparation of following mea layers 103 is by down adding mask plate on the medium high-reflecting film layer 104, utilizes magnetic control sputtering vacuum coating, finishes at plated film, keeps mask plate, only mea layers 103 down carried out the oxygen gas plasma bombardment.The condition of handling is 45ml/s for the 23mPa oxygen flow, and the processing time is 10 minutes.The oxygen gas plasma bombardment can effectively reduce the ITO surface contact angle, improves the wetting state of liquid on surface.Referring to (J.S.Kim, R.H.Friend, F.Cacialli.surface energy andpolarity of treated indium-tin-oxide anodes for polymer light-emitting diodesstudied by contact-angle measurements, J.Appl.Phys., 1999,86,2774-2778.) after treatment following mea layers 103 surface energies are higher than medium high-reflecting film layer 104 down, identical with embodiment 1, thin polymer film 101 optionally is deposited on down on the mea layers 103.
On polymer film layer 101, pass through mask evaporation upper film electrode layer 102, medium high-reflecting film layer 106 on evaporation on the upper substrate 107, the material of upper substrate 107 is identical with infrabasal plate 105, and thickness is thinner, and the film system of last medium high-reflecting film layer 106 is in full accord with following medium high-reflecting film layer 104.Upper film electrode layer 102 is aimed at, compressed with last medium high-reflecting film layer 106, and fix by uv-exposure glue, form the hollow transmission type fabry-perot tunable filter at the mea layers 102 and the outward flange of last medium high-reflecting film layer 106 surface of contact.
Claims (5)
1. a method for preparing the hollow transmission type fabry-perot tunable filter is characterized in that: comprise the steps:
1) the following mea layers (103) of medium high-reflecting film layer (104) and hollow under the upper surface of infrabasal plate (105) forms successively;
At least the upper surface process surface energy modification of one deck in described down medium high-reflecting film layer (104) and the following mea layers (103) makes down the surface energy of mea layers (103) be higher than to descend the surface energy of medium high-reflecting film layer (104);
2) piezopolymer optionally is deposited on down on the mea layers (103), forms polymer film layer (101);
3) go up by mask evaporation upper film electrode layer (102) at polymer film layer (101), form hollow transmission type fabry-perot tunable filter the latter half;
4) go up medium high-reflecting film layer (106) on the evaporation at upper substrate (107), form hollow transmission type fabry-perot tunable filter the first half;
5) the upper film electrode layer (102) of hollow transmission type fabry-perot tunable filter the latter half is aimed at, compressed with the last medium high-reflecting film layer (106) of hollow transmission type fabry-perot tunable filter the first half, and fix by uv-exposure glue at the outward flange of mea layers (102) and last medium high-reflecting film layer (106) surface of contact, form the hollow transmission type fabry-perot tunable filter.
2. the method for preparing the hollow transmission type fabry-perot tunable filter as claimed in claim 1, it is characterized in that: step 1) forms medium high-reflecting film layer (104) down for go up evaporation at infrabasal plate (105), described medium high-reflecting film layer (104) is down carried out surface energy modification, and evaporation forms mea layers (103) down on the following medium high-reflecting film layer after the surface energy modification.
3. the method for preparing the hollow transmission type fabry-perot tunable filter as claimed in claim 1, it is characterized in that: step 1) is crossed medium high-reflecting film layer (104) under the formation successively, following mea layers (103) for going up at infrabasal plate (105) to steam, and described mea layers (103) is carried out surface energy modification.
4. the method for preparing the hollow transmission type fabry-perot tunable filter as claimed in claim 1, it is characterized in that: step 1) forms medium high-reflecting film layer (104) down for go up evaporation at infrabasal plate (105), described medium high-reflecting film layer (104) is down carried out surface energy modification, following medium high-reflecting film layer (104) after surface energy modification is gone up evaporation and is formed mea layers (103) down, and described mea layers (103) is down carried out surface energy modification.
5. the method for preparing the hollow transmission type fabry-perot tunable filter as claimed in claim 1 is characterized in that: step 2) in the method for piezopolymer by spin coating or hydrostomia optionally is deposited on down on the mea layers (103).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021056273A1 (en) * | 2019-09-25 | 2021-04-01 | 深圳市海谱纳米光学科技有限公司 | Tunable optical filter device |
| CN114843726A (en) * | 2022-06-07 | 2022-08-02 | 欧梯恩智能科技(苏州)有限公司 | Tunable filter and manufacturing method thereof |
-
2010
- 2010-02-08 CN CN201010108642A patent/CN101806961A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021056273A1 (en) * | 2019-09-25 | 2021-04-01 | 深圳市海谱纳米光学科技有限公司 | Tunable optical filter device |
| EP4071546A4 (en) * | 2019-09-25 | 2023-08-30 | Shenzhen Hypernano Optics Technology Co., Ltd | Tunable optical filter device |
| CN114843726A (en) * | 2022-06-07 | 2022-08-02 | 欧梯恩智能科技(苏州)有限公司 | Tunable filter and manufacturing method thereof |
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