CN101800178B - 一种铪硅铝氧氮高介电常数栅介质的制备方法 - Google Patents
一种铪硅铝氧氮高介电常数栅介质的制备方法 Download PDFInfo
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- CN101800178B CN101800178B CN2009100776238A CN200910077623A CN101800178B CN 101800178 B CN101800178 B CN 101800178B CN 2009100776238 A CN2009100776238 A CN 2009100776238A CN 200910077623 A CN200910077623 A CN 200910077623A CN 101800178 B CN101800178 B CN 101800178B
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- gate dielectric
- oxygen nitrogen
- dielectric constant
- hafnium silicon
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- -1 hafnium silicon aluminum oxygen nitrogen Chemical compound 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000000137 annealing Methods 0.000 claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 229910017083 AlN Inorganic materials 0.000 claims description 18
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 12
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- NRCKPUWWRHKANR-UHFFFAOYSA-N [O].[N].[Si].[Hf] Chemical compound [O].[N].[Si].[Hf] NRCKPUWWRHKANR-UHFFFAOYSA-N 0.000 claims description 6
- 238000007796 conventional method Methods 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000004151 rapid thermal annealing Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims 2
- 239000011259 mixed solution Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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CN2009100776238A CN101800178B (zh) | 2009-02-09 | 2009-02-09 | 一种铪硅铝氧氮高介电常数栅介质的制备方法 |
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CN101800178B true CN101800178B (zh) | 2012-05-30 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103137460B (zh) * | 2011-11-23 | 2016-02-10 | 中国科学院微电子研究所 | 一种分子尺度界面SiO2的形成和控制方法 |
US8822292B2 (en) | 2011-11-23 | 2014-09-02 | Institute of Microelectronics, Chinese Academy of Sciences | Method for forming and controlling molecular level SiO2 interface layer |
CN103545182B (zh) * | 2012-07-12 | 2017-03-29 | 中国科学院微电子研究所 | 一种低功函数金属栅形成方法 |
CN104112680A (zh) * | 2013-04-22 | 2014-10-22 | 无锡华润上华半导体有限公司 | 半导体器件背面制造工艺 |
CN105869992A (zh) * | 2016-03-31 | 2016-08-17 | 国网山东省电力公司夏津县供电公司 | 一种新型铪硅钽氧氮高介电常数栅介质的制备方法 |
CN112002804A (zh) * | 2020-09-02 | 2020-11-27 | 北京理工大学 | 一种高k栅介质材料及其制备方法和应用 |
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JP特开2008-47823A 2008.02.28 |
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