CN101794857B - High-efficiency heat radiating LED packaging structure and method for producing same - Google Patents
High-efficiency heat radiating LED packaging structure and method for producing same Download PDFInfo
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- CN101794857B CN101794857B CN 201010113643 CN201010113643A CN101794857B CN 101794857 B CN101794857 B CN 101794857B CN 201010113643 CN201010113643 CN 201010113643 CN 201010113643 A CN201010113643 A CN 201010113643A CN 101794857 B CN101794857 B CN 101794857B
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Abstract
The invention relates to a high-efficiency heat radiating LED packaging structure and a method for producing the same, belonging to the field of the semiconductor lighting technology. The high-efficiency heat radiating LED packaging structure comprises an LED chip and a substrate, and an AuSn welding layer is arranged between the LED chip and the substrate. The method for producing the high-efficiency heat radiating LED packaging structure comprises the following steps: b1, providing the LED chip, arranging an AuSn plating layer on the surface of the LED chip, which needs to be welded, in a vacuum sputtering, and expanding crystal; b2, providing the substrate, and arranging an AlN plating layer on the crystal surface of the LED chip, which needs to be solidified, in a vacuum plating way; b3, providing an AuSn welding rod and a micro welding machine which is provided with a nitrogen protecting welding chamber and a welding gun which can fire interruptedly and melt the AuSn at constant temperature quantitatively; b4, firing interruptedly and melting the AuSn at constant temperature quantitatively on the crystal surface of the substrate, which needs to be solidified, arranging the LED chip on the molted AuSn, and cooling the molted AuSn; b5, spreading phosphor silica gel on the light emitting surface of the LED chip; and b6, sealing the phosphor silica gel.
Description
Technical field
The present invention relates to the semiconductor lighting technology, relate in particular to a kind of high-efficiency heat radiating LED encapsulation and preparation method thereof.
Background technology
The LED light fixture has the characteristics that the life-span is long, economize electric power, is applied to lighting field more and more widely.Traditional LED encapsulation, solid brilliant material generally adopts the silver slurry, with reference to figure 1, is a kind of effect typical LED encapsulating structure, is that silver starches 004 between substrate 005 and the led chip 003, is silica gel fluorescent material 002 and silica gel lens001 above again.
This technological for solid brilliant material package with the silver slurry, be the main flow of present LED lighting field.In up-to-date disclosed a kind of high-power LED light source structure on February 3rd, 2010, it comprises like Chinese patent document CN201396621: a copper base comprises dielectric substrate layer and the copper foil layer that covers on it; Plural number LED sheet, arranged is on copper base; One radiator is arranged at a side on the copper base, and contacts with copper base through heat conductive silica gel.Further described LED sheet comprises heating panel, is hollow out between wherein, and outer rim is the polygon of band imploded arcs; The LED wafer is arranged at the hollow-out parts of heating panel; High heat conduction silver slurry is distributed between LED wafer, heating panel and the copper base; Silica gel is packaged in the copper base top, coats LED wafer and heating panel.Chinese patent document CN201017896 is in the encapsulating structure of disclosed a kind of light-emitting diode on the 6th February in 2008 for another example; The aluminium base of the encapsulating structure of this LED light-emitting diode adopts the anodized PROCESS FOR TREATMENT and forms one deck insulating oxide at its face; The silicon wafer of LED directly is encapsulated on the insulating oxide; Adopt silver slurry sintering process to be provided with conductive layer on the insulating oxide, silicon wafer is connected with conductive layer through the spun gold electrode.
Traditional packaged type is the main cause that causes the LED light decay; Particularly use after half a year the sharply main cause of light decay: the conductive coefficient of general on the one hand silver slurry has only 3w/mk, and the conductive coefficient＞200w/mk of substrate, the chip heating will be passed to substrate; Produce the heat radiation bottleneck through the silver slurry; Can not in time derive heat, make led chip overheated, thereby cause light decay; Also have on the other hand the silver slurry is accomplished 20w/mk; Promptly now popular on the market high heat conduction silver slurry; But all need macromolecular material (like silica gel) as carrier because of belonging to silver slurry, and all there is bubble-tight problem in all macromolecular materials, just all macromolecules all can air permeable, water vapour etc.; And oxidation can take place after running into gas in silver, the only remaining 0.2w/mk of silver oxide slurry conductive coefficient after the oxidation.With reference to figure 2, wherein curve A is the light decay figure that adopts the test of conventional package LED light decay to draw, this shows, and after using 500 hours, the rapid light decay of LED.
Summary of the invention
The objective of the invention is to overcome the weak point of above-mentioned prior art and provide that a kind of antioxygenic property is good, high-efficiency heat radiating LED encapsulation and preparation method thereof, thereby realize that light decay is little, prolong the life-span of led chip.
The object of the invention can be realized through following technical scheme:
A kind of high-efficiency heat radiating LED encapsulation comprises led chip and substrate; It is characterized in that: have the AuSn layer between led chip and the substrate; In one embodiment of the present of invention, the content of the Au of AuSn layer is 77.9% to 82%; In one embodiment of the present of invention, the content of the Au of AuSn layer is 80%.
In one embodiment of the present of invention, the AuSn layer is the Sn/Au eutectic body.
The high-efficiency heat radiating LED encapsulation, it is characterized in that: said led chip exiting surface also is provided with silica gel phosphor powder layer and silica gel layer; Said substrate is a metal substrate.
The high-efficiency heat radiating LED encapsulation, it is characterized in that: the solder side of said led chip is provided with AuSn coating, and this AuSn coating adopts vacuum plating mode to be provided with; The solder side of said substrate is provided with AlN coating, and this AlN coating adopts vacuum plating mode to be provided with.Led chip preplating AuSn can make welding process not influence chip, and improves adhesion, and in one embodiment of the present of invention, preplating AuSn adopts vacuum sputtering mode under the normal temperature.In one embodiment of the invention, with Cu or CuWu or AlSi or AlN+Al or pottery replacement AlN, also can obtain the effect about the same with AlN.
The object of the invention can also be realized through following technical scheme:
A kind of die-bonding method is characterized in that may further comprise the steps: a1 step, a kind of led chip is provided, and to be welded of led chip AuSn coating is set with vacuum plating mode; The a2 step provides a kind of substrate, at the solid crystal face of treating of substrate AlN coating is set with vacuum plating mode; A3 step provides a kind of AuSn welding rod, provide a kind of can constant temperature, the quantitative welding gun of fixed fire fusion AuSn; A4 step, indoor in nitrogen protection, said welding gun is treated solid crystal face constant temperature, quantitative fixed fire fusion AuSn to said substrate, places led chip to fusion AuSn then; Wherein, a1 step, a2 step, a3 step are not distinguished sequencing.In one embodiment of the present of invention, to be welded of chip AuSn is set and adopts vacuum sputtering mode under the normal temperature.In one embodiment of the invention, with Cu or CuWu or AlSi or AlN+Al or pottery replacement AlN.
Die-bonding method is characterized in that: a4 goes on foot described constant temperature, and the temperature when being meant fusion AuSn fixed fire is between 290 ℃ to 340 ℃.
Die-bonding method, said constant temperature are 290 ℃ or 300 ℃ or 305 ℃ or 310 ℃ or 315 ℃ or 320 ℃ or 330 ℃.
Die-bonding method is characterized in that: before also being included in a4 step a4 is gone on foot the freezing step of said substrate, leave time of fusion AuSn heat to reduce said substrate.
The object of the invention can also be realized through following technical scheme:
The preparation method of a kind of high-efficiency heat radiating LED encapsulation is characterized in that may further comprise the steps: the b1 step, a kind of led chip is provided, and to be welded of led chip AuSn coating is set with the vacuum sputtering mode, expand brilliant; The b2 step provides a kind of substrate, at the solid crystal face of treating of substrate AlN coating is set with vacuum plating mode; B3 step provides a kind of AuSn welding rod, and a kind of microbonding machine is provided, and these microbonding facility have the nitrogen protection welding booth, and these microbonding facility have can constant temperature, the quantitative welding gun of fixed fire fusion AuSn; B4 step, in the nitrogen protection welding booth of the microbonding machine that is provided in the b3 step, through said welding gun to said substrate treat solid crystal face constant temperature, quantitative fixed fire fusion AuSn, place led chip to fusion AuSn then, cooling; The b5 step is to led chip exiting surface coating fluorescent powder silica gel; The b6 step, envelope silica gel.
The preparation method of high-efficiency heat radiating LED encapsulation is characterized in that, also comprises b4 is gone on foot said substrate freezing step before fixed fire fusion AuSn, leaves time of fusion AuSn heat to reduce said substrate.
The preparation method of high-efficiency heat radiating LED encapsulation is characterized in that b4 goes on foot described constant temperature, and the temperature when being meant fusion AuSn fixed fire is between 290 ℃ to 340 ℃.
High-efficiency heat radiating LED of the present invention encapsulation, led chip with and substrate between adopt AuSn as consolidating brilliant material, itself has good heat-conducting AuSn, does not need macromolecular material such as silica gel to make carrier; Add the good in oxidation resistance of AuSn, during LED work, can not produce accumulation of heat; Can oxidation not consolidate brilliant material, promote accumulation of heat, thereby the led chip working temperature be relatively stable because the time has grown; Compared with prior art, light decay is little, the led chip long service life.Die-bonding method of the present invention and high-efficiency heat radiating LED of the present invention encapsulation preparation method; It is the method for the aforementioned high-efficiency heat radiating LED encapsulation of preparation; This method adopts the microbonding technology, quantitatively to substrate fixed fire fusion AuSn, places led chip through constant temperature again; Can avoid temperatures involved by led chip, in order to avoid reduce the performance of led chip or produce potential bad; Through being set in advance, AuSn coating can increase solder bond power; And AuSn coating adopts the vacuum plating; Can not accomplish at normal temperatures more and can damage led chip; Die-bonding method of the present invention and high-efficiency heat radiating LED of the present invention encapsulation preparation method compared with prior art have under the prerequisite of in the preparation process, not damaging led chip, and the finished product tool is the characteristics of the little long service life of light decay not.
Description of drawings
Fig. 1 is a kind of LED encapsulation sketch map of convention.
Fig. 2 is the light decay contrast sketch map of the LED encapsulation of traditional LED encapsulation and first embodiment of the invention.
Fig. 3 first embodiment of the invention sketch map.
Fig. 4 is the sketch map of third embodiment of the invention.
Embodiment
To combine accompanying drawing that the present invention is made further detailed description below.With reference to figure 3, first embodiment of the invention is a kind of high-efficiency heat radiating LED encapsulation, comprises led chip 103 and substrate 105; Has AuSn layer 104 between led chip 103 and the substrate 105; Be silica gel phosphor powder layer 102 and silica gel layer 101 above the led chip, in the present embodiment, the content of the Au of AuSn layer is 80%; Certainly, as a kind of replacement scheme of present embodiment, the content of Au also can be between 77.9% to 82%.In the present embodiment, the AuSn layer is the Sn/Au eutectic body.Substrate described in the present embodiment is an aluminium base.In the present embodiment, the solder side of said led chip 103 is provided with AuSn coating, and this AuSn coating adopts vacuum sputtering plating mode to be provided with; The solder side of said substrate is provided with AlN coating, and this AlN coating adopts vacuum plating mode to be provided with.Led chip preplating AuSn can make welding process not influence chip, and improves adhesion.With reference to figure 2, be the light decay test comparison diagram of high-efficiency heat radiating LED encapsulation with traditional LED encapsulation (silver slurry) of present embodiment, wherein curve B is the high-efficiency heat radiating LED encapsulation of present embodiment.
Second embodiment of the invention is a kind of die-bonding method, may further comprise the steps: a1 step, a kind of led chip is provided, and to be welded of led chip AuSn coating is set with vacuum plating mode; The a2 step provides a kind of substrate, at the solid crystal face of treating of substrate AlN coating is set with vacuum plating mode; A3 step provides a kind of AuSn welding rod, provide a kind of can constant temperature, the quantitative welding gun of fixed fire fusion AuSn; A4 step, indoor in nitrogen protection, said welding gun is treated solid crystal face constant temperature, quantitative fixed fire fusion AuSn to said substrate, places led chip to fusion AuSn then; In the present embodiment, a1 step, a2 step, a3 step are not distinguished sequencing.In the present embodiment, to be welded of chip AuSn is set and adopts vacuum sputtering mode under the normal temperature.A4 goes on foot described constant temperature, and the temperature when being meant fusion AuSn fixed fire is 310 ℃.As the replacement scheme of present embodiment, following temperature also can this show goal of the invention in fact: 290 ℃, 295 ℃, 300 ℃, 305 ℃, 310 ℃, 315 ℃, 320 ℃, 330 ℃.In the present embodiment, a4 is gone on foot the freezing step of said substrate before also being included in a4 step, leave time of fusion AuSn heat, avoid damaging in the welding process led chip to reduce said substrate.
The 3rd embodiment of the present invention is the preparation method of a kind of high-efficiency heat radiating LED encapsulation, and with reference to figure 4, this method may further comprise the steps: the b1 step, a kind of led chip is provided, and to be welded of led chip AuSn coating is set with the vacuum sputtering mode, expand brilliant; The b2 step provides a kind of substrate, at the solid crystal face of treating of substrate AlN coating is set with vacuum plating mode; B3 step provides a kind of AuSn welding rod, and a kind of microbonding machine is provided, and these microbonding facility have the nitrogen protection welding booth, and these microbonding facility have can constant temperature, the quantitative welding gun of fixed fire fusion AuSn; B4 step, in the nitrogen protection welding booth of the microbonding machine that is provided in the b3 step, through said welding gun to said substrate treat solid crystal face constant temperature, quantitative fixed fire fusion AuSn, place led chip to fusion AuSn then, cooling; The b5 step is to led chip exiting surface coating fluorescent powder silica gel; The b6 step, envelope silica gel.In the present embodiment, also comprise b4 is gone on foot said substrate freezing step before fixed fire fusion AuSn, i.e. ice cell among Fig. 4, thus avoid in the welding process the damage of giving birth to reduce leave time of fusion AuSn heat of said substrate to led chip.In the present embodiment; B4 goes on foot described constant temperature; Temperature when being meant fusion AuSn fixed fire is 310 ℃, as the replacement scheme of present embodiment, following temperature also can be in fact this goal of the invention at present: 300 ℃, 305 ℃, 310 ℃, 315 ℃, 320 ℃, 330 ℃ of 290 ℃, 295 ℃, ℃.
Claims (8)
1. a high-efficiency heat radiating LED encapsulation comprises led chip and substrate; It is characterized in that: have the AuSn layer between led chip and the substrate; The solder side of said led chip is provided with AuSn coating, and this AuSn coating adopts vacuum plating mode to be provided with; The solder side of said substrate is provided with AlN coating, and this AlN coating adopts vacuum plating mode to be provided with.
2. die-bonding method is characterized in that may further comprise the steps:
A1 step provides a kind of led chip, to be welded of led chip AuSn coating is set with vacuum plating mode;
The a2 step provides a kind of substrate, at the solid crystal face of treating of substrate AlN coating is set with vacuum plating mode;
A3 step provides a kind of AuSn welding rod, provide a kind of can constant temperature, the quantitative welding gun of fixed fire fusion AuSn;
A4 step, indoor in nitrogen protection, said welding gun is treated solid crystal face constant temperature, quantitative fixed fire fusion AuSn to said substrate, places led chip to fusion AuSn then;
Wherein, a1 step, a2 step, a3 step are not distinguished sequencing.
3. die-bonding method according to claim 2, it is characterized in that: a4 goes on foot described constant temperature, and the temperature when being meant fusion AuSn fixed fire is between 295 ℃ to 340 ℃.
4. die-bonding method according to claim 3, said constant temperature are 300 ℃ or 305 ℃ or 310 ℃ or 315 ℃ or 320 ℃ or 330 ℃.
5. die-bonding method according to claim 2 is characterized in that: before also being included in a4 step a4 is gone on foot the freezing step of said substrate, leave time of fusion AuSn heat to reduce said substrate.
6. the preparation method of high-efficiency heat radiating LED encapsulation is characterized in that may further comprise the steps:
B1 step provides a kind of led chip, to be welded of led chip AuSn coating is set with the vacuum sputtering mode, expands brilliant;
The b2 step provides a kind of substrate, at the solid crystal face of treating of substrate AlN coating is set with vacuum plating mode;
B3 step provides a kind of AuSn welding rod, and a kind of microbonding machine is provided, and these microbonding facility have the nitrogen protection welding booth, and these microbonding facility have can constant temperature, the quantitative welding gun of fixed fire fusion AuSn;
B4 step, in the nitrogen protection welding booth of the microbonding machine that is provided in the b3 step, through said welding gun to said substrate treat solid crystal face constant temperature, quantitative fixed fire fusion AuSn, place led chip to fusion AuSn then, cooling;
The b5 step is to led chip exiting surface coating fluorescent powder silica gel;
The b6 step, envelope silica gel.
7. the preparation method of high-efficiency heat radiating LED according to claim 6 encapsulation is characterized in that, also comprises b4 is gone on foot said substrate freezing step before fixed fire fusion AuSn, leaves time of fusion AuSn heat to reduce said substrate.
8. the preparation method of high-efficiency heat radiating LED encapsulation according to claim 6 is characterized in that b4 goes on foot described constant temperature, and the temperature when being meant fusion AuSn fixed fire is between 295 ℃ to 340 ℃.
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| CN 201010113643 CN101794857B (en) | 2010-02-25 | 2010-02-25 | High-efficiency heat radiating LED packaging structure and method for producing same |
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| CN102000893B (en) * | 2010-10-25 | 2013-02-13 | 惠州志能达光电科技有限公司 | Eutectic microwelding method for LED crystals |
| CN103996784A (en) * | 2014-05-06 | 2014-08-20 | 上海大学 | Package structure for reducing thermal resistance of large-power LED and manufacturing method thereof |
| CN106684075A (en) * | 2017-02-16 | 2017-05-17 | 张虹 | High-light efficiency light source assembly and preparation method thereof |
| CN107634131A (en) * | 2017-09-14 | 2018-01-26 | 旭宇光电（深圳）股份有限公司 | High-power LED light source, LED light source module and LED chip die-bonding method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2729906Y (en) * | 2004-10-13 | 2005-09-28 | 上海金桥大晨光电科技有限公司 | High-power LED colour mixture luminescent device |
| CN201081170Y (en) * | 2007-10-12 | 2008-07-02 | 胡家培 | Bake-free encapsulated high-efficiency high-heat dissipation performance high-power LED light source |
| CN101308893A (en) * | 2007-05-17 | 2008-11-19 | 研晶光电股份有限公司 | Grain binding material and method for light emitting diode |
| CN101308897A (en) * | 2007-05-16 | 2008-11-19 | 优志旺电机株式会社 | Led device and method by which it is produced |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2729906Y (en) * | 2004-10-13 | 2005-09-28 | 上海金桥大晨光电科技有限公司 | High-power LED colour mixture luminescent device |
| CN101308897A (en) * | 2007-05-16 | 2008-11-19 | 优志旺电机株式会社 | Led device and method by which it is produced |
| CN101308893A (en) * | 2007-05-17 | 2008-11-19 | 研晶光电股份有限公司 | Grain binding material and method for light emitting diode |
| CN201081170Y (en) * | 2007-10-12 | 2008-07-02 | 胡家培 | Bake-free encapsulated high-efficiency high-heat dissipation performance high-power LED light source |
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