CN101794253A - Memory storage device and control method thereof, and hot data control module - Google Patents
Memory storage device and control method thereof, and hot data control module Download PDFInfo
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Abstract
A memory storage device and a control method thereof, and a hot data control module, the memory storage device has a high density memory unit, the high density memory unit is divided into a plurality of most significant memory pages and a plurality of least significant memory pages. The main feature of the control method is to determine the nature of the data according to its length, and then to determine whether to allocate the data in the least significant memory page or the entire high density memory according to the nature of the data. By means of the technical scheme, the invention utilizes the characteristic of Paired memory pages (Paired pages) of the high-density memory to store frequently updated data in the memory pages with faster programming time, thereby accelerating the programming time and prolonging the service life of the storage device.
Description
Technical field
The present invention relates to a kind of storage device and method, refer to a kind of internal storing memory and control method thereof especially.
Background technology
Non-voltile memory (Non-volatile memory, or be called non-according to electrical internal memory) in order to storage data, often be applied to storage device, for example: memory card, the carry-on dish of USB interface, solid magnetic disc driver etc.Flash memory (Flash memory) has advantages such as high storage density, low power consumption characteristic, effective access efficiency and reasonable price cost, and becomes present non-voltile memory main flow.
The complete usually multi-level unit type internal memory (Multi-level-cell that adopts of general non-voltile memory, MLC) or single stage unit type internal memory (Single-level-cell, SLC), wherein with multi-level unit make in save as high density internal memory (High density memory), and with single stage unit make in save as low-density internal memory (Low density memory).Compared to the low-density internal memory, the data storing capacity of high density internal memory unit area can become multiple to increase, thereby have and significantly improve storage volume and the advantage that reduces cost, so its to read and write data, carry out burning longer with the required time of (Erase) action of erasing; In addition, the multi-level unit process technique causes also that the high density internal memory can bear smears that to write number of times (Erase cycle) less, has so just relatedly influenced the data access speed and the serviceable life of adopting the storage device of high density internal memory.
In view of the characteristics of high density internal memory are that storage volume is big and cost is low, but that data access speed reaches the durable number of times of erasing slowly is few; And the characteristics of low-density internal memory are that data access speed is fast and erase often durable, but storage volume is little and cost is high, and then develop and the internal memory that in single storage device, possesses above-mentioned two kinds of different densities simultaneously, be mixed density memory (Hybriddensity memory).
At present, the mixed density memory storing device that industry proposed adopts low-density internal memory record frequency of utilization higher data usually, with the lower data of high density internal memory record frequency of utilization, yet, in the limited storage volume of low-density internal memory, plan that new and old data processing method will influence the task performance of mixed density memory storing device; And, because the number of times of erasing that the internal memory of different densities can bear is different, and the data of depositing when internal memory are updated or during access, can erase and deposit the block of these data, and then cause the number of times inequality of erasing of the internal memory of two kinds of density, thus, can facing wherein, a kind of internal memory of density arrives first the durable number of times restriction of erasing, but the situation that the internal memory of another kind of density still can continue to use, and finish serviceable life of storage device ahead of time.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of internal storing memory and control method thereof, hot data control module, to improve the problem of known technology.
The present invention discloses a kind of control method of internal storing memory, is applicable to that at least one data configuration that writes that will be transmitted by main frame is in an internal storing memory.This storage device has high density memory unit, is divided into a plurality of first kind memory pages or leaves and a plurality of second class memory page or leaf in this high density memory unit, and it is shorter than the time that writes this first kind memory page or leaf wherein to write this second class memory page or leaf.The step of described control method is as follows: at first carry out a hot data filter, this data length and threshold value that writes data is compared, in order to distinguish the character that this writes data; Decide this to write the allocation position of data according to comparative result afterwards, if this data length that writes data is littler than this threshold value, then this is write data configuration in second class memory page or leaf, otherwise this is write data configuration in first kind memory page or leaf and second class memory page or leaf, in other words, just write the character of data, this is write data configuration in this second class memory page or leaf or this first kind memory page or leaf and this second class memory page or leaf according to this.
The present invention also provides a kind of hot data control module, be applicable at least one data that write of access from high density memory unit, this high density memory unit pack is drawn together a plurality of first kind memory pages or leaves and a plurality of second class memory page or leaf, and this hot data control module includes:
One hot data filter element compares this data length and threshold value that writes data, writes the character of data in order to distinguish this; And
One address configuration unit is coupled between this hot data filter element and this high density memory unit, in order to the character that writes data according to this it is disposed at this second class memory page or leaf or this first kind memory page or leaf and this second class memory page or leaf.
The present invention also provides a kind of internal storing memory, is applicable to cooperate at least one data that write of a main frame access, includes:
One non-volatile memory cell comprises a high density memory unit that is made of the high density internal memory, and this high density memory unit pack is drawn together a plurality of first kind memory pages or leaves and a plurality of second class memory page or leaf; And
One control module is coupled between this main frame and this non-volatile memory cell, and this control module writes the character of data according to this, and this is write data configuration in this second class memory page or leaf or this first kind memory page or leaf and this second class memory page or leaf.
By the aforementioned techniques scheme, the present invention utilizes the characteristic of the paired memory page or leaf (PairedPage) of high density internal memory, normal data updated is stored in burning (Program) time remembers in the page or leaf faster, and then quicken recordable time, and prolong the serviceable life of storage device.
Above general introduction and ensuing detailed description and accompanying drawing all are to reach mode, means and the effect that predetermined purpose is taked in order to further specify the present invention.And relevant other purpose of the present invention and advantage will be set forth in follow-up explanation and accompanying drawing.
Description of drawings
Fig. 1 is the synoptic diagram that disclosed high density is remembered a specific embodiment of unit;
Fig. 2 is the synoptic diagram of a specific embodiment of disclosed physical blocks;
Fig. 3 A～Fig. 3 C is that the state of a specific embodiment of disclosed high density memory unit changes synoptic diagram;
Fig. 4 is the system architecture synoptic diagram of disclosed internal storing memory;
Fig. 5 is the system architecture synoptic diagram of a specific embodiment of disclosed hot data control module;
Fig. 6 is the data configuration synoptic diagram that disclosed high density is remembered a specific embodiment of unit; And
Fig. 7 is the flow chart of steps of a specific embodiment of the control method of disclosed internal storing memory.
[description of reference numerals]
1: high density memory unit
PBA
0, PBA
1, PBA
2, PBA
i: physical blocks
MSB
0, MSB
1, MSB
2, MSB
i, MSB
n: highest significant position memory page or leaf
LSB
0, LSB
1, LSB
2, LSB
i, LSB
n: least significant bit (LSB) memory page or leaf
" U ", " A ", " B ", " C ": state
31: highest significant position 33: least significant bit (LSB)
4: digital display circuit
40: internal storing memory
41: non-volatile memory cell
43: control module
431: system interface
433: hot data control module
4331: hot data filter element 4333: the address configuration unit
435: microprocessor
437: data buffer storage unit
439: memory interface
45: Power Management Unit
47: main frame
49: power supply
HD
0, HD
1, HD
n: hot data
S701～S719: each steps flow chart
Embodiment
Internal storing memory proposed by the invention and control method thereof, the character that writes data that elder generation's identification is transmitted by a main frame, that will more often upgrade writes data configuration in the replication rate memory page or leaf of high density internal memory faster, with the raising replication rate, and the effective utilization and the life-span of lifting memory device.
The internal storing memory framework that major technique of the present invention is characterised in that the control method of data configuration and uses this method, below necessary built-in system framework and motion flow thereof are just only proposed, yet, the general energy technician in this territory as can be known, except following mentioned member, certainly therefore the necessary element that comprises other in the internal storing memory, should not exceed with the present embodiment revealer.
At first, see also Fig. 1, this figure is the synoptic diagram that disclosed high density is remembered a specific embodiment of unit.Shown in first figure, a high density memory unit 1 that is made of the high density internal memory defines continuous a plurality of physical blocks PBA
0, PBA
1, PBA
2..., each physical blocks PBA
iHave a plurality of first kind memory pages or leaves and a plurality of second class memory page or leaf, as shown in Figure 2, owing to there is the characteristic of paired memory page or leaf (Paired Page) in the high density, described first kind memory page or leaf is highest significant position memory page or leaf (MSB Page) MSB
0, MSB
1, MSB
2...; And second class memory page or leaf is least significant bit (LSB) memory page or leaf (LSB Page) LSB
0, LSB
1, LSB
2....
So high density is remembered the highdensity reason that is called of unit, mainly be that wherein each memory cell can be in and surpasses two states, as shown in Figure 3A, each memory cell comprises two positions, with deciding four kinds of states " U ", " A ", " B ", " C ", these two positions are highest significant position (MSB) 31 and least significant bit (LSB) (LSB) 33, distinguish the position on different memory pages or leaves, and belong to the highest significant position memory page or leaf MSB of same memory cell
iAnd least significant bit (LSB) memory page or leaf LSB
iPromptly be called paired memory page or leaf (Paired Page).
When writing data to highest significant position memory page or leaf MSB
i, shown in Fig. 3 B, memory cell must be burnt to state " C " by state " U ", or be burnt to state " B " by state " A ", whereby highest significant position 31 represented positions are converted to logical zero by logical one.And if with highest significant position memory page or leaf MSB
iIn memory cell maintain state " A " or state " U ", highest significant position 31 can be expressed as logical one.
And when writing data to least significant bit (LSB) memory page or leaf LSB
i, shown in Fig. 3 C, then memory cell can be maintained state " U ", so that least significant bit (LSB) 33 is expressed as logical one.If memory cell is burned onto state " A ", then least significant bit (LSB) 33 can be expressed as logical zero.A memory cell like this only need be kept two kinds of lower current potentials and handle two states, therefore if only use the least significant bit (LSB) memory page or leaf LSB of high density memory unit
iCome record data, its effect and speed can be similar with use low-density mnemon.So the hot data that the present invention proposes more often to upgrade only utilizes a least significant bit (LSB) memory page or leaf LSB
iCome record, quicken the processing speed of hot data whereby.
Then, see also Fig. 4, this figure is the system architecture synoptic diagram of disclosed internal storing memory.As shown in Figure 4, an internal storing memory 40 (hereinafter to be referred as storage device) is applied in the digital display circuit 4, cooperates to carry out to write and reading of data.In the digital display circuit 4, storage device 40 is coupled to main frame 47, accepts the instruction running that main frame 47 is assigned.Specifically, main frame 47 can be a computer system, and storage device 40 then is the solid state hard disc of computer system.
The present invention manages the stored file data of storage device 40 according to the system architecture of the file system institute standard of FAT12, FAT16, FAT32 or NTFS.The addressing conversion table of planning in advance via microprocessor 435 firmwares is with the video physical address of non-volatile memory cell 41 of the logical block addresses of file data in file system.
Then, please consult Fig. 4 and Fig. 5 simultaneously.Fig. 5 is the system architecture synoptic diagram of a specific embodiment of disclosed hot data control module.As shown in Figure 5, hot data control module 433 is coupled to non-volatile memory cell 41, and non-volatile memory cell 41 has high density memory unit 1.Main frame 47 passes to hot data control module 433 with the pairing data (following general designation writes data) of the instruction assigned, and hot data control module 433 can specify this to write least significant bit (LSB) memory page or leaf or highest significant position memory page or leaf and the least significant bit (LSB) memory page or leaf of data configuration in high density memory unit 1 according to this character that writes data.
Hot data control module 433 includes a hot data filter element 4331 and an address configuration unit 4333.Hot data filter element 4331 receives and writes data, distinguishes its data character by the length that writes data.Address configuration unit 4333 is coupled between hot data filter element 4331 and the high density memory unit 1, in order to according to the character that writes data it is disposed at suitable address.Specifically, if the data length that writes data is littler than a threshold value of presetting, and hot data filter element 4331 judges that promptly this writes data is a hot data, by address configuration unit 4333 given least significant bit (LSB)s memory page or leaf LSB
iThe address dispose this and write data; Otherwise judge that this writes data is unexpected winner data (non-hot datas), will write data configuration in highest significant position memory page or leaf MSB according to the mode that generally writes high density memory unit 1
iAnd least significant bit (LSB) memory page or leaf LSB
i
A length and a threshold value that the present invention will write data relatively decide this to write the character of data.Threshold value can be a default value or user's setting value, also can adjust its value by the character that writes data.For example, write the address and the length of data by 4331 statistics past of hot data filter element N pen, then analyzing this N pen writes its address of data repeatability higher data and falls into which data length scope, what-if goes out higher its data length system of data that writes of repeatability and falls into below the 2KB, is 2KB with threshold settings then.And ensuing its length of data that writes then is judged as hot data, otherwise then is judged as non-hot data if is lower than 2KB.In addition, the establishing method of threshold value can write the new threshold value of data change by every reception N pen; Also can be after reception N pen write data and analyze threshold value, next every reception M pen writes data and just upgrades a threshold value (N ≠ M, N, M 〉=1), so can dynamically adjust the definition of hot data by the statistical study that writes data.If storage device 40 just come into operation, generator gate limit value not as yet, a predeterminable initial threshold value is in hot data filter element 4331 or load the threshold value that write down when last time using for judging that initial strokes writes the character of data.
In the high density memory unit 1, if after the physical blocks of a storage data is write and is expired, then specify another physical blocks of having erased to come storage data again by address configuration unit 4333, and the latter's physical blocks is the sub-block of the former physical blocks, and having linking relationship between physical blocks (can manage in the logical address conversion table, also part one chained list is managed in addition), find oneself sub-block address in order to arbitrary physical blocks.Please refer to Fig. 6, this figure is the data configuration synoptic diagram that disclosed high density is remembered a specific embodiment of unit.As shown in Figure 6, suppose hot data HD
0, HD
1..., HD
n, according to HD
0, HD
1, HD
1... HD
n, HD
nMore new sequences data are write in the high density memory unit 1, then by behind the 4333 given addresses, address configuration unit, by microprocessor 435 control hot data HD
0, HD
1Write physical blocks PBA respectively
0A least significant bit (LSB) memory page or leaf LSB
0, LSB
1In, the hot data HD that upgrades after treating
1Desire to write fashionable, then it is continued to be recorded in a least significant bit (LSB) memory page or leaf LSB
2, and least significant bit (LSB) memory page or leaf LSB
1In data then be labeled as invalid.Write hot data according to aforesaid way, hot data HD
nBe stored in physical blocks PBA
0Last least significant bit (LSB) memory page or leaf LSB
nAfter, receive hot data HD again
nWhen desire was upgraded, address configuration unit 4333 can dispose a physical blocks PBA who has erased in addition again
2The hot data that writes after writing down, thereby hot data HD
nWrite physical blocks PBA
2A least significant bit (LSB) memory page or leaf LSB
0In, and physical blocks PBA
0A least significant bit (LSB) memory page or leaf LSB
nIn data then be labeled as invalid.Physical blocks PBA in the present embodiment
2Be physical blocks PBA
0Sub-block, physical blocks PBA
2Also can continue to link more sub-block and come record data.
In high density memory unit 1, can be used for the quantity of the physical blocks of erasing of record data less than a default value, in one specific embodiment, this default value is the quantity of redundant block, just microprocessor 435 begins to reclaim the program of block, meaning is about to the physical blocks of linking relationship (as PBA
0, PBA
2) in all valid data collect after, be stored in another physical blocks of having erased, and the above-mentioned script of erasing has the data in the physical blocks of linking relationship, write for other data.Except aforesaid way, system also can be in arbitrary physical blocks recorded data be all when invalid, promptly carry out and reclaim the block program, physical blocks is erased to be write for other data.
At last, see also Fig. 7, this figure is the flow chart of steps of a specific embodiment of the control method of disclosed internal storing memory.Wherein Xiang Guan system architecture is please consulted Fig. 4 simultaneously.As shown in Figure 7, described control method includes the following step:
At first, hot data filter element 4331 receives one and writes data (step S701); Then, carry out a hot data filter (step S703), judge whether to write the data length of data less than threshold value; If not, then microprocessor 435 writes data configuration in highest significant position memory page or leaf MSB with this
iAnd least significant bit (LSB) memory page or leaf LSB
iIn (step S705); And upgrade the logical address that writes data and the corresponding relation (step S707) of physical address according to configuration address, just continue to receive next record afterwards and write data;
If being judged as of step S703 is to judge then whether physical blocks also has spendable least significant bit (LSB) memory page or leaf (step S711); If then microprocessor 435 is controlled according to 4333 given addresses, address configuration unit and is write data configuration in least significant bit (LSB) memory page or leaf LSB
iIn (step S713);
If step S711 is judged as not, then expression does not have least significant bit (LSB) memory page or leaf can supply storage data at present, and then whether the quantity of judging the physical blocks of having erased is less than default value (step S715), to determine whether the reaching condition that block reclaims; If not, address configuration unit 4333 disposes another physical blocks of having erased immediately and will write in the least significant bit (LSB) memory page or leaf of physical blocks that data are written to new configuration (step S717); And upgrade the linking relationship (step S719) of physical blocks, and promptly set up the mother-child relationship (MCR) of original entity block and new physical blocks, upgrade the logical address that writes data and the corresponding relation of physical address according to configuration address more subsequently;
If being judged as of step S715 is, expression has reached the block condition that reclaims, then will write data and have the valid data in the physical blocks of linking relationship to be replicated in another physical blocks of having erased (step S721), and upgrade the logical address that writes data and the corresponding relation (step S723) of physical address according to configuration address; At last, erasing has the data in the physical blocks of linking relationship to write (step S725) for other data originally, and continuation reception next record writes data processing.
Describe in detail by above example, can know internal storing memory of the present invention and control method thereof, be to adjust threshold value with the identification hot data by the analysis and the lasting character that writes data of detecting of data length, and then hot data is recorded in least significant bit (LSB) memory page or leaf in the high density internal memory, non-hot data just is disposed at least significant bit (LSB) memory page or leaf and highest significant position memory page or leaf according to the mode that generally writes the high density internal memory, make full use of characteristic that least significant bit (LSB) memory page or leaf burning data is similar to the low-density internal memory whereby and do the processing of data, effectively improve the speed that writes the high density internal memory, and then promote the effective utilization and the life-span of memory device.
But; the above; only be the detailed description and the accompanying drawing of specific embodiments of the invention; be not in order to restriction the present invention; all scopes of the present invention should be as the criterion with claim, the those of ordinary skill in any the field of the invention can think easily and variation or revise all can be encompassed within the scope of patent protection that this case defines.
Claims (21)
1. the control method of an internal storing memory, it is characterized in that being applicable to at least one data configuration that writes in an internal storing memory, this internal storing memory has high density memory unit, comprise a plurality of first kind memory pages or leaves and a plurality of second class memory page or leaf in this high density memory unit, it is shorter than the time that writes this first kind memory page or leaf wherein to write this second class memory page or leaf, and this control method comprises the following steps:
Carry out a hot data filter, this data length and threshold value that writes data is compared, in order to distinguish the character that this writes data; And
Write the character of data according to this, this is write data configuration in this second class memory page or leaf or this first kind memory page or leaf and this second class memory page or leaf.
2. control method as claimed in claim 1 is characterized in that judging that then this writes data is a hot data if this data length that writes data is littler than this threshold value, and this is write data configuration in this second class memory page or leaf; Otherwise judge that this writes data is unexpected winner data, this is write data configuration in this first kind memory page or leaf and this second class memory page or leaf.
3. control method as claimed in claim 2 is characterized in that more comprising execution one reclaimer.
4. control method as claimed in claim 3 is characterized in that this high density memory unit defines continuous a plurality of physical blocks, and each this physical blocks has a plurality of these first kind memory pages or leaves and this second class memory page or leaf.
5. control method as claimed in claim 4 is characterized in that this is disposed at this second class memory page or leaf with writing the data succession.
6. control method as claimed in claim 4, it is characterized in that if be used for disposing this this physical blocks that writes data write full after, then use another this physical blocks of having erased to dispose this and write data, and this physical blocks of the latter is the sub-block of the former this physical blocks, and both have linking relationship.
7. control method as claimed in claim 6 is characterized in that this reclaimer comprises the following steps:
It is invalid to be all as if recorded data in this physical blocks, this physical blocks of then erasing.
8. control method as claimed in claim 7 is characterized in that more may further comprise the steps:
Upgrade this and write the logical address of data and the corresponding relation of physical address; And
Upgrade the linking relationship of these physical blocks.
9. control method as claimed in claim 6 is characterized in that this reclaimer comprises the following steps:
Whether the quantity of judging this physical blocks of having erased is less than a default value;
If above-mentioned being judged as be, be stored in another this physical blocks of having erased after then will having valid data in this physical blocks of linking relationship to collect; And
Data in above-mentioned this physical blocks that linking relationship arranged of erasing.
10. control method as claimed in claim 9 is characterized in that more may further comprise the steps:
Upgrade this and write the logical address of data and the corresponding relation of physical address; And
Upgrade the linking relationship of these physical blocks.
11. control method as claimed in claim 1 it is characterized in that this second class memory page or leaf is least significant bit (LSB) memory page or leaf, and this first kind memory page or leaf is highest significant position memory page or leaf.
12. hot data control module, it is characterized in that being applicable at least one data that write of access from high density memory unit, this high density memory unit pack is drawn together a plurality of first kind memory pages or leaves and a plurality of second class memory page or leaf, and this hot data control module includes:
One hot data filter element compares this data length and threshold value that writes data, writes the character of data in order to distinguish this; And
One address configuration unit is coupled between this hot data filter element and this high density memory unit, in order to the character that writes data according to this it is disposed at this second class memory page or leaf or this first kind memory page or leaf and this second class memory page or leaf.
13. hot data control module as claimed in claim 12, it is characterized in that this threshold value because this receives continuous a plurality of access data decision before writing data, promptly add up the address repeatability of those access datas, and this data length of writing access data of average normal repeat to address (RA) decides this threshold value.
14. hot data control module as claimed in claim 12 is characterized in that this data length that writes data is littler than this threshold value, judges that promptly this writes data is a hot data, otherwise judges that this writes data is unexpected winner data.
15. hot data control module as claimed in claim 12 it is characterized in that this second class memory page or leaf is least significant bit (LSB) memory page or leaf, and this first kind memory page or leaf is highest significant position memory page or leaf.
16. an internal storing memory is characterized in that being applicable to cooperating at least one data that write of a main frame access, includes:
One non-volatile memory cell comprises a high density memory unit that is made of the high density internal memory, and this high density memory unit pack is drawn together a plurality of first kind memory pages or leaves and a plurality of second class memory page or leaf; And
One control module is coupled between this main frame and this non-volatile memory cell, and this control module writes the character of data according to this, and this is write data configuration in this second class memory page or leaf or this first kind memory page or leaf and this second class memory page or leaf.
17. internal storing memory as claimed in claim 16 is characterized in that this control module comprises:
One system interface is coupled to this main frame, as the transmission interface of instruction between this main frame and this internal storing memory with data;
One hot data filter element compares this data length and threshold value that writes data, writes the character of data in order to distinguish this; And
One address configuration unit is coupled between this hot data filter element and this high density memory unit, in order to the character that writes data according to this it is disposed at this second class memory page or leaf or this first kind memory page or leaf and this second class memory page or leaf; And
One microprocessor is coupled to this system interface and this hot data filter element, this is write data be sent to this hot data filter element.
18. internal storing memory as claimed in claim 17 is characterized in that this control module more comprises:
One data buffer storage unit is coupled to this system interface, writes data with temporary this; And
One memory interface is coupled between this data buffer storage unit and this non-volatile memory cell, is subjected to the control of this microprocessor to write data to transmit this.
19. internal storing memory as claimed in claim 17, it is characterized in that this threshold value because this receives continuous a plurality of access data decision before writing data, promptly add up the address repeatability of those access datas, and the data length of this access data of average normal repeat to address (RA) decides this threshold value.
20. internal storing memory as claimed in claim 17 is characterized in that this data length that writes data is littler than this threshold value, judges that promptly this writes data is a hot data, otherwise judges that this writes data is unexpected winner data.
21. internal storing memory as claimed in claim 17 it is characterized in that this second class memory page or leaf is least significant bit (LSB) memory page or leaf, and this first kind memory page or leaf is highest significant position memory page or leaf.
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| WO2013189212A1 (en) * | 2012-06-20 | 2013-12-27 | 深圳市江波龙电子有限公司 | Method and device for controlling use of non-least-significant bit page in storage device |
| CN104516823A (en) * | 2013-09-30 | 2015-04-15 | 华为技术有限公司 | Method and device for storing data |
| CN104516823B (en) * | 2013-09-30 | 2018-04-27 | 华为技术有限公司 | A kind of date storage method and device |
| CN106250052A (en) * | 2015-06-05 | 2016-12-21 | 爱思开海力士有限公司 | Storage system and operational approach thereof |
| CN106648713A (en) * | 2015-10-28 | 2017-05-10 | 深圳市博巨兴实业发展有限公司 | OTP programming method and device |
| CN107102816A (en) * | 2016-02-23 | 2017-08-29 | 爱思开海力士有限公司 | Storage system and its operating method |
| CN107102816B (en) * | 2016-02-23 | 2020-08-11 | 爱思开海力士有限公司 | Storage system and operation method thereof |
| CN111158579A (en) * | 2018-11-07 | 2020-05-15 | 威刚科技股份有限公司 | Solid state disk and data access method thereof |
| CN110321073A (en) * | 2019-04-11 | 2019-10-11 | 深圳市德名利电子有限公司 | The date storage method and device and equipment of a kind of flash memory |
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