CN101789434B - Image display system and manufacturing method thereof - Google Patents
Image display system and manufacturing method thereof Download PDFInfo
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- CN101789434B CN101789434B CN 200910001110 CN200910001110A CN101789434B CN 101789434 B CN101789434 B CN 101789434B CN 200910001110 CN200910001110 CN 200910001110 CN 200910001110 A CN200910001110 A CN 200910001110A CN 101789434 B CN101789434 B CN 101789434B
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Abstract
The invention discloses an image display system and a manufacturing method thereof. The image display system comprises a thin film transistor device which comprises a first insulating layer, a first polysilicon active layer, a second polysilicon active layer, a second polysilicon active layer, a polysilicon grid electrode layer, a second insulating layer and a metal grid electrode layer. A first zone and a second zone of a base plate are covered by the first insulating layer, the first polysilicon active layer which is located in the first zone is arranged between the base plate and the first insulating layer, the second polysilicon active layer which is located in the second zone is arranged on the first insulating layer, the polysilicon grid electrode layer is arranged above the first polysilicon active layer, the polysilicon grid electrode layer and the second polysilicon active layer are covered by the second insulating layer, and the metal grid electrode layer is arranged above the second polysilicon active layer.
Description
Technical field
The present invention relates to a kind of flat-panel screens technology, particularly relate to periphery circuit region and OLED in a kind of Organic Light Emitting Diode (organic light emitting diode, OLED) display and drive image display system and the manufacture method thereof that thin-film transistor (TFT) that the district has different electrical characteristics (electrical characteristic) installs and has these TFT devices.
Background technology
In recent years, the demand of active formula array plane display increases fast, for example active formula array Organic Light Emitting Diode (active matrix OLED, AMOLED) display.The AMOLED display utilizes thin-film transistor (thin film transistor, TFT) as the switch element of pixel region and the driving element of light-emitting component usually.In addition, the periphery circuit region of AMOLED display (that is, drive circuit area) also needs to use the cmos circuit that is made of TFT.
The material that uses according to active layer is divided into amorphous silicon (a-Si) and multi-crystal TFT.Compared to non-crystalline silicon tft, multi-crystal TFT has the advantage of high carrier mobility and high drive circuit integrated level and low-leakage current and is usually used in the product of high speed operation.Therefore, low temperature polycrystalline silicon (low temperaturepolysilicon, LTPS) becomes a kind of new application of flat-panel screens technology.LTPS can form by simple IC technique, and drive circuit is integrated on the substrate with pixel, has reduced manufacturing cost.
In LTPS film crystal pipe manufacturer, the TFT of periphery circuit region and pixel region has identical in fact electrical characteristics.Yet in the AMOLED display, the electrical characteristics of the TFT of periphery circuit region and the switching TFT of pixel region need be different from the drive TFT of pixel region.For example, the former need be designed to have high carrier mobility and the low subthreshold value characteristics such as (sub-threshold swing) that swings, and using provides quick response.In addition, the latter need be designed to have that high subthreshold value swings and the characteristic such as low threshold voltage (thresholdvoltage), uses to increase show GTG (gray scale) and extend the OLED life-span.Yet if according to above-mentioned LTPS technique, the TFT that make different electrical characteristics is difficults.
In addition, during above-mentioned LTPS technique, the active layer of TFT (active layer) is to adopt the high power laser light crystallization process formed.Yet uneven due to the Laser output energy, the drive current that makes formed each OLED drive TFT is difference to some extent, causes display to produce the problem of the defects of vision/non-uniform light (mura).
Therefore, be necessary to seek a kind of thin film transistor device for the OLED display, it can have the TFT of different electrical characteristics, and can solve the problem of the defects of vision/non-uniform light that the OLED drive TFT causes.
Summary of the invention
In view of this, according to the invention provides a kind of image display system and manufacture method thereof, wherein image display system comprises thin film transistor device, the zones of different of thin film transistor device is used the different die size or by the formed polysilicon active layer of different crystallization process, and using in zones of different provides the thin-film transistor of different electrical characteristics and improve the problem of the defects of vision/non-uniform light.Moreover, make thin film transistor device at film crystal tube grid and the active layer of zones of different with same polysilicon material layer, make the thin-film transistor with polysilicon gate have less threshold voltage, avoid simultaneously the difficulty that causes gate dielectric layer thickness to control because form polysilicon active layer by different crystallization process.
according to the invention provides a kind of image display system, this system comprises thin film transistor device, it comprises: the substrate with the firstth district and Second Region, be positioned at the first insulating barrier of the firstth district and Second Region and covered substrate, the firstth district and be arranged at substrate and the first insulating barrier between the first polysilicon active layer, be positioned at Second Region and be arranged at the second polysilicon active layer on the first insulating barrier, be arranged at the polysilicon gate layer on the first insulating barrier of the first polysilicon active layer top, cover the second insulating barrier of polysilicon gate layer and the second polysilicon active layer, and be arranged at metal gate layers on the second insulating barrier of the second polysilicon active layer top.Wherein, the first polysilicon active layer, the first insulating barrier that is positioned at the top and polysilicon gate layer consist of the first film transistor, and the second polysilicon active layer, the second insulating barrier that is positioned at the top and metal gate layers consist of the second thin-film transistor.
A kind of manufacture method of image display system is provided again according to the present invention, and wherein this system has thin film transistor device, and the method comprises: substrate is provided, and it has the firstth district and Second Region.Form the first polysilicon active layer in the firstth district of substrate.Covering the first insulating barrier on the first polysilicon active layer and on the Second Region of substrate.Be positioned at formation polysilicon gate floor on first insulating barrier in the firstth district, and be positioned at formation the second polysilicon active layer on the first insulating barrier of Second Region simultaneously.Covering the second insulating barrier on the polysilicon gate layer and on the second polysilicon active layer.Form metal gate layers on the second insulating barrier above the second polysilicon active layer.Wherein, the first polysilicon active layer, the first insulating barrier that is positioned at the top and polysilicon gate layer consist of the first film transistor of thin film transistor device, and the second polysilicon active layer, the second insulating barrier that is positioned at the top and metal gate layers consist of the second thin-film transistor of thin film transistor device.
Description of drawings
Fig. 1 is for showing active formula array organic light emitting diode display floor map;
Fig. 2 is the circuit diagram that shows pixel cell in Fig. 1;
Fig. 3 A to Fig. 3 I is the manufacture method generalized section that shows according to the image display system with thin-film transistor of the embodiment of the present invention; And
Fig. 4 is for showing image display system block schematic diagram according to another embodiment of the present invention.
Description of reference numerals
10: display floater 10a: pixel cell
12: data line drive circuit 14: scan line drive circuit
16: switching thin-film transistor 18: drive thin-film transistor
20: reservior capacitor 22: light-emitting component
The district 200 in 100: the first: Second Region
300: substrate 302: resilient coating
304,310: polysilicon layer 306,314,316: polysilicon active layer
308,318,330,332: insulating barrier 306a, 316a: light dope source electrode/drain region
306b, 314a, 316b: source/drain regions 312: polysilicon gate layer
314b: lightly mixed drain area 317,327: patterned photoresist layer
319,329: heavy ion annotates 325: light ion injects
322,324: metal gate layers 334,336,338: electrode
400: thin film transistor device 500: type flat panel display apparatus
600: input unit 700: electronic installation
D1-Dn: data wire S1-Sn: scan line
Vdd: voltage source
Embodiment
Below making and the use of the explanation embodiment of the present invention.Yet, can understand easily embodiment provided by the present invention and only be used for explanation with the ad hoc approach making and use the present invention, be not to limit to scope of the present invention.
Please refer to Fig. 1, it shows active formula array Organic Light Emitting Diode (AMOLED) display plane schematic diagram.The AMOLED display comprises: display floater 10, data line drive circuit 12 and scan line drive circuit 14.Display floater 10 has a plurality of pixel cells, in order to simplify accompanying drawing, only shows single pixel cell 10a herein.Data line drive circuit 12 has many data wire D1 to Dn, and scan line drive circuit 14 has multi-strip scanning line S1 to Sn.Each pixel cell 10a is connected (for example, data wire D3 and scan line S3) and is arranged in matrix with a data wire and a scan line.
Please refer to Fig. 2, it shows the circuit diagram of pixel cell 10a in Fig. 1.Have driving thin-film transistor (driving TFT) in typical pixel cell and be used for the storage image data for state and the storage capacitors that driving light-emitting component, switching thin-film transistor (switching TFT) are used for the switching pixel cell.In the present embodiment.Pixel cell 10a comprises: light-emitting component 22, and Organic Light Emitting Diode (OLED) for example, and in order to drive the driving thin-film transistor 18 of this light-emitting component 22, it is generally P type thin-film transistor (PTFT).Pixel cell 10a also comprises switching thin-film transistor 16, and it is generally N-type thin-film transistor (NTFT), and reservior capacitor 20.The grid of switching thin-film transistor 16 is connected to corresponding scan line S3, and drain electrode is connected to corresponding data wire D3, and source electrode is connected with an end of reservior capacitor 20 and the grid of driving thin-film transistor 18.The other end of reservior capacitor 20 is connected with the source electrode that drives thin-film transistor 18, and is connected to voltage source V dd.The drain electrode that drives thin-film transistor 18 is connected with light-emitting component 22.
As described above, due to the problem of the defects of vision/non-uniform light, must consider the consistency of the driving thin-film transistor 18 of pixel cell 10a.Yet, for the thin-film transistor (not illustrating) that switching thin-film transistor 16 and peripheral circuit use, for having relatively high expectations of element efficiency.In other words, the demand of driving thin-film transistor 18 is different from the electrical characteristics demand of switching thin-film transistor 16 and peripheral circuit thin-film transistor.
Image display system and the manufacture method thereof of the embodiment of the present invention below are described.Fig. 3 I shows the image display system according to the embodiment of the present invention, particularly a kind of image display system with thin film transistor device 400.Embodiments of the invention be the zone on transparency carrier make to be used for the NTFT of peripheral circuit and PTFT with for the switching thin-film transistor of pixel cell (as, NTFT), and make to be used in another zone pixel cell the driving thin-film transistor (as, PTFT).In the following description, the thin-film transistor for peripheral circuit is called " non-driving thin-film transistor " with the switching transistor that is used for pixel cell.
Thin film transistor device 400 comprises the substrate 300 with the first district 100 and Second Region 200.Resilient coating 302 can at random be covered on substrate 300, and with as the adhesion coating between substrate 300 and follow-up formed active layer or pollute barrier layer, it can be made of silicon oxide layer, silicon nitride layer or its combination institute.
Polysilicon active layer 306 is arranged on the resilient coating 302 in the first district 100, and polysilicon active layer 314 and 316 is arranged on the resilient coating 302 of Second Region 200.In the present embodiment, the die-size of polysilicon active layer 306 is different from the die-size of polysilicon active layer 314 and 316.For example, the latter's die-size is greater than the former die-size.Polysilicon active layer 306 comprises channel region and a pair of by source/drain regions 306b that channel region separated.Similarly, polysilicon active layer 314 comprises channel region and a pair of source/drain regions 314a, and polysilicon active layer 316 comprises channel region and a pair of source/drain regions 316b.
The first district 100 and the Second Region 200 of insulating barrier 308 covered substrates 300.The insulating barrier 308 that specifically is positioned at the first district 100 covers polysilicon active layer 306 with as gate dielectric, is located between substrate 300 and polysilicon active layer 314 and 316 at the insulating barrier 308 of Second Region 200.
Polysilicon gate layer 312 is arranged on the insulating barrier 308 of polysilicon active layer 306 tops, and itself and polysilicon active layer 314 and 316 are made of same polysilicon layer.In other words, polysilicon gate layer 312 is formed by the patterned polysilicon layer with polysilicon active layer 314 and 316.
Insulating barrier 318 covers polysilicon gate layer 312 and polysilicon active layer 314 and 316, wherein be positioned at the insulating barrier 318 of polysilicon active layer 314 and 316 tops also as gate dielectric, and be respectively arranged with metal gate layers 322 and 324 above the insulating barrier 318 corresponding to polysilicon active layer 314 and 316.
In the present embodiment, be positioned at the first district 100 polysilicon active layer 306, insulating barrier 308, and polysilicon gate floor 312 consist of thin-film transistors, it comprises the driving thin-film transistor for the light-emitting component of AMOLED.Moreover, be positioned at Second Region 200 polysilicon active layer 314 and 316, insulating barrier 318, and metal gate layers 322 and 324 consist of two thin-film transistors, it comprises the non-driving thin-film transistor (that is, switching thin-film transistor and peripheral circuit thin-film transistor) for AMOLED.The actual quantity that should be noted thin-film transistor in the first district 100 and Second Region 200 depends on circuit design, is not confined to three thin-film transistors that Fig. 3 I illustrates.
Next, Fig. 3 A to Fig. 3 I shows the manufacture method generalized section according to the image display system with thin-film transistor 400 of the embodiment of the present invention.Please refer to Fig. 3 A, substrate 300 is provided, it has the first district 100 and Second Region 200.In the present embodiment, the first district 100 is used for making drive TFT.The part in the left side of Second Region 200 is be used to the NTFT that makes non-driving use, and the part on right side is be used to the PTFT that makes non-driving use.Substrate 300 can be made of glass, quartz or other transparent materials.
Then, can at random form resilient coating 302 on substrate 300.Afterwards, form amorphous silicon layer (not illustrating) and it is carried out crystallization process on resilient coating 302, amorphous silicon layer is changed into polysilicon layer 304.In the present embodiment, polysilicon layer 304 can carry out this crystallization process by non-laser crystallization technology.for example, non-laser crystallization technology comprises: solid phase crystallization method (solid phasecrystallization, SPC), metal induced crystallization method (metal induced crystallization, MIC), metal induced side crystallization method (metal induced lateral crystallization, MILC), electric field strengthens metal induced side crystallization method (field enhanced metal induced lateral crystallization, FE-MILC), or electric field strengthens rapid thermal annealing method (field enhanced rapid thermal annealing) etc.Only be illustration in these various crystallization methods of enumerating, the present invention is not limited to this.
Please refer to Fig. 3 B, by well known photolithography and etch process patterned polysilicon layer 304, to form polysilicon active layer 306 above the first district 100 of substrate 300.
Please refer to Fig. 3 C, form insulating barrier 308 and cover polysilicon active layer 306 above the first district 100 of substrate 300 and Second Region 200.Insulating barrier 308 can be made of silica, silicon nitride or other known grid dielectric materials.Then, form amorphous silicon layer (not illustrating) and it is carried out crystallization process on insulating barrier 308, amorphous silicon layer is changed into polysilicon layer 310.Specifically, be different from polysilicon layer 304, polysilicon layer 310 utilizes insulating barrier 308 carry out high power laser light crystallization process (standard laser crystallization method) and form as separator.For example, quasi-molecule laser annealing (excimer laser annealing, ELA) method.
Please refer to Fig. 3 D, patterned polysilicon layer 310 forming the polysilicon gate floor 312 corresponding to polysilicon active layer 306 on the insulating barrier 308 in the first district 100, and forms polysilicon active layer 314 and 316 simultaneously on the insulating barrier 308 of Second Region 200.Because the polysilicon active layer 306 in the first district 100 is to utilize different crystallization process to form from the polysilicon active layer 314 and 316 of Second Region 200, therefore the die-size of polysilicon active layer 306 is different from the die-size of polysilicon active layer 314 and 316.For example, the die-size by the formed polysilicon active layer 314 of ELA and 316 is greater than the die-size by the formed polysilicon active layer 306 of non-laser crystallization technology.
Please refer to Fig. 3 E, utilize the well known photolithography technology to form patterned photoresist layer 317 on the structure shown in Fig. 3 D, in order to define source/drain regions in polysilicon active layer 314.Then, utilize patterned photoresist layer 317 as injecting mask (implant mask), polysilicon active layer 314 is implemented Heavy Ion Implantation (heavy ion implantation) 319, with the source/drain regions 314a in the interior formation N-type of polysilicon active layer 314.
Please refer to Fig. 3 F, after removing patterned photoresist layer 317, sequentially form insulating barrier 318 and metal level 320 and cover polysilicon gate layer 312 and polysilicon active layer 314 and 316 on insulating barrier 308.Similarly, insulating barrier 318 can be made of silica, silicon nitride or other known grid dielectric materials.Moreover metal level 320 can be made of molybdenum (Mo), molybdenum alloy or other known metal grid materials.
Please refer to Fig. 3 G, come patterned metal layer 320 by well known photolithography and etch process, to form respectively metal gate layers 322 and 324 on the insulating barrier 318 above polysilicon active layer 314 and 316.Then, utilize metal gate layers 322 and 324 as injecting mask, polysilicon active layer 314 and 316 is implemented light ion inject (light ion implantation) 325, with lightly doped drain (the lightly doped drain in the interior formation N-type of polysilicon active layer 314, LDD) district 314b, and respectively at polysilicon active layer 306 and 316 interior formation light dope source electrode/drain region 306a and 316a.In addition, after carrying out light ion injection 325, polysilicon gate layer 312 becomes N-type doped polycrystalline silicon grid layer.Herein, the polysilicon active layer 314 of Second Region 200, the insulating barrier 318 that is positioned at the top and metal gate layers 322 are the NTFT that consist of non-driving use.In the present embodiment, the NTFT of non-driving use can be switching TFT.
Please refer to Fig. 3 H, utilize the well known photolithography technology to cover patterned photoresist layer 327 on the NTFT of non-driving use.Then, as injecting mask, polysilicon active layer 306 and 316 is implemented Heavy Ion Implantations 329 with patterned photoresist layer 327, with respectively at source/drain regions 306b and the 316b of polysilicon active layer 306 and 316 interior formation P types.In addition, after carrying out Heavy Ion Implantation 329, polysilicon gate layer 312 becomes P type doped polycrystalline silicon grid layer.Herein, the polysilicon active layer 306 in the first district 100, the insulating barrier 308 that is positioned at the top and polysilicon gate floor 312 consist of driving PTFT.Moreover the polysilicon active layer 316 of Second Region 200, the insulating barrier 318 that is positioned at the top and metal gate layers 324 consist of the PTFT of non-driving use.In the present embodiment, the PTFT of non-driving use can be peripheral circuit TFT.
Please refer to Fig. 3 I, after removing patterned photoresist layer 317, sequentially form insulating barrier 330 and 332 on the structure of Fig. 3 H, with as protective layer, flatness layer, intermediate layer or its combination.Insulating barrier 330 and 332 can be silica, silicon nitride or its combination.Afterwards, by well known photolithography and etch process, form the contact hole expose source/ drain regions 306b, 314a and 316b and insert electric conducting material in the inner and form electrode 334,336 corresponding to source/ drain regions 306b, 314a and 316b, and 338 at insulating barrier 330 and 332, its material comprises: aluminium (Al), molybdenum (Mo), titanium (Ti) or its combination.Thus, the TFT device of just completing the embodiment of the present invention is made.
According to above-described embodiment, because the active layer of drive TFT is to adopt the manufacturing of non-laser crystallization metallization processes to form, can avoid display to produce the problem of the defects of vision/non-uniform light.Moreover the peripheral circuit TFT that has relatively high expectations due to element efficiency and the active layer of switching TFT still adopt the manufacturing of laser crystallization metallization processes to form, and can keep its element efficiency.In other words, the active layer that forms due to different crystallization process manufacturings has different die-sizes, therefore the electrical characteristics of drive TFT can be different from the electrical characteristics of peripheral circuit TFT and switching TFT.In addition, the grid of drive TFT is made of polysilicon, and its work function (workfunction) therefore can reduce the threshold voltage of drive TFT and increase drive current, and further extending the OLED life-span usually less than metal gates.
Fig. 4 shows has the image display system block schematic diagram according to another embodiment of the present invention, it may be implemented in the plane and shows (FPD) device 500 or electronic installation 700, for example notebook computer, mobile phone, digital camera, personal digital assistant (personal digital assistant, PDA), desktop computer, television set, vehicle display or portable DVD player.TFT device 400 according to the present invention can be arranged at flat display apparatus 500, and flat display apparatus 500 can be the OLED display.In other embodiments, TFT device 400 can be arranged at electronic installation 700.As shown in Figure 4, electronic installation 700 comprises: flat display apparatus 500 and input unit 600.Input unit 600 is coupled to type flat panel display apparatus 500, in order to provide input signal (for example, signal of video signal) to flat display apparatus 500 to produce image.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention; those of ordinary skill in technical field under any; without departing from the spirit and scope of the present invention; when can do to change and retouching, so protection scope of the present invention is when looking accompanying being as the criterion that claim defines.
Claims (10)
1. image display system comprises:
Thin film transistor device comprises:
Substrate has the firstth district and Second Region;
The first insulating barrier is positioned at this firstth district and this Second Region and covers this substrate;
The first polysilicon active layer, this firstth district and be arranged at this substrate and this first insulating barrier between;
The second polysilicon active layer is positioned at this Second Region and is arranged on this first insulating barrier;
The polysilicon gate layer is arranged on this first insulating barrier of this first polysilicon active layer top;
The second insulating barrier covers this polysilicon gate layer and this second polysilicon active layer; And
Metal gate layers is arranged on this second insulating barrier of this second polysilicon active layer top,
Wherein this first polysilicon active layer, this first insulating barrier that is positioned at the top and this polysilicon gate layer consist of the first film transistor, and this second polysilicon active layer, this second insulating barrier that is positioned at the top and this metal gate layers consist of the second thin-film transistor.
2. image display system as claimed in claim 1, wherein this first polysilicon active layer and this second polysilicon active layer have different die-sizes.
3. image display system as claimed in claim 1, wherein this second polysilicon active layer and this polysilicon gate layer are made of same polysilicon layer.
4. image display system as claimed in claim 1 also comprises:
Flat display apparatus comprises this thin film transistor device; And
Input unit is coupled to this flat display apparatus, inputs to this flat display apparatus in order to provide, and makes this flat display apparatus show image.
5. image display system as claimed in claim 4, wherein this flat display apparatus is organic light emitting diode display, this the second thin-film transistor is one of them of peripheral circuit thin-film transistor and switching thin-film transistor, and the driving thin-film transistor that this first film transistor is light-emitting component.
6. image display system as claimed in claim 4, wherein this system comprises the electronic installation with this flat display apparatus.
7. the manufacture method of an image display system, wherein this system has thin film transistor device, and the method comprises:
Substrate is provided, and it has the firstth district and Second Region;
Form the first polysilicon active layer in this firstth district of this substrate;
Covering the first insulating barrier on this first polysilicon active layer and on this Second Region of this substrate;
Be positioned at formation polysilicon gate floor on this first insulating barrier in this firstth district, and be positioned at formation the second polysilicon active layer on this first insulating barrier of this Second Region simultaneously;
Covering the second insulating barrier on this polysilicon gate layer and on this second polysilicon active layer; And
Form metal gate layers on this second insulating barrier above this second polysilicon active layer,
Wherein this first polysilicon active layer, be positioned at the first film transistor that this first insulating barrier and this polysilicon gate layer of top consist of this thin film transistor device, and the second thin-film transistor that this second polysilicon active layer, this second insulating barrier above being positioned at and this metal gate layers consist of this thin film transistor device.
8. the manufacture method of image display system as claimed in claim 7, wherein this first polysilicon active layer and this second polysilicon active layer have different die-sizes.
9. the manufacture method of image display system as claimed in claim 7, wherein this first polysilicon active layer and this second polysilicon active layer are formed by different crystallization process.
10. the manufacture method of image display system as claimed in claim 7, wherein this thin film transistor device is used for organic light emitting diode display, this second thin-film transistor is used for peripheral circuit thin-film transistor and the switching thin-film transistor of this organic light emitting diode display, and this first film transistor comprises the driving thin-film transistor for the light-emitting component of this organic light emitting diode display.
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| CN105161458B (en) * | 2015-08-17 | 2018-01-30 | 武汉华星光电技术有限公司 | The preparation method of TFT substrate |
| CN108288606A (en) * | 2017-01-06 | 2018-07-17 | 昆山国显光电有限公司 | A kind of thin-film transistor array base-plate and manufacturing method and display panel |
| CN108766870B (en) | 2018-05-31 | 2020-06-30 | 武汉华星光电技术有限公司 | Manufacturing method of LTPS TFT substrate and LTPS TFT substrate |
| CN110164875A (en) | 2019-06-06 | 2019-08-23 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display panel, display device |
| WO2021012161A1 (en) * | 2019-07-22 | 2021-01-28 | 京东方科技集团股份有限公司 | Array substrate, preparation method therefor, and display apparatus |
| CN111834431B (en) * | 2020-07-16 | 2023-01-13 | Oppo广东移动通信有限公司 | Display screen driving structure and manufacturing method thereof |
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Address after: Hsinchu Science Park, Taiwan, China Applicant after: INNOLUX DISPLAY CORP. Address before: Miaoli County, Taiwan, China Applicant before: CHI MEI OPTOELECTRONICS CORP. Address after: Miaoli County, Taiwan, China Applicant after: CHI MEI OPTOELECTRONICS CORP. Address before: Hsinchu science industry zone, Taiwan, China Applicant before: TOPPOLY OPTOELECTRONICS Corp. |
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Free format text: CORRECT: APPLICANT; FROM: TONGBAO OPTOELECTRONICS CO., LTD. TO: QIMEI ELECTRONIC CO LTD Free format text: CORRECT: APPLICANT; FROM: QIMEI ELECTRONIC CO LTD TO: INNOLUX DISPLAY CORPORATION |
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