CN101769711B - Tunnel effect based contact type nanometer displacement sensor - Google Patents
Tunnel effect based contact type nanometer displacement sensor Download PDFInfo
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- CN101769711B CN101769711B CN2010101011541A CN201010101154A CN101769711B CN 101769711 B CN101769711 B CN 101769711B CN 2010101011541 A CN2010101011541 A CN 2010101011541A CN 201010101154 A CN201010101154 A CN 201010101154A CN 101769711 B CN101769711 B CN 101769711B
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Abstract
The invention discloses a tunnel effect based contact type nanometer displacement sensor. In the sensor, a probe is arranged on the periphery of a detected object; the upper end of the probe is connected to a guide rod; a graphite block is arranged on the guide rod; the probe is driven to move when a micro-positioning mechanism acts; the probe above the graphite block is connected to a piezoceramic tube; the piezoceramic tube is connected with a piezoceramic driver; the graphite block and the probe form the tunnel effect, and tunnel current is formed in a bias circuit; a signal acquisition system is connected in the bias circuit, and acquires tunnel current signals in the bias circuit; the tunnel current signal is transmitted to a piezoceramic driver after the tunnel current signal is processed by a signal processing system, and is used as a feedback drive signal to control the piezoceramic driver to generate action. The sensor in the invention can measure displacement changes fine to nanometer grade among parts contacted one another, is significant in measurement of mechanical and electric parts and the like or mechanical displacement, is easy for operation and control, and has high measurement precision.
Description
Technical field
The present invention relates to a kind of contact type nanometer displacement sensor based on tunnel effect, its purposes is to do the precision measurement of displacement, can be used for technical fields such as machinery, material, electronics, biology, instrument and meter.
Background technology
Along with the development of manufacturing technology towards microcosmic and high precision direction, nano measurement technology and nanofabrication technique develop rapidly.At present, nano measurement mainly contains 1. PSTM (STM), atomic force microscope (AFM) measurement; 2. X ray interferometer measurement; 3. measuring method such as Fabry-Perot etalon micrometer system and all kinds of optics nano measurements.PSTM adds bias voltage between probe and measured workpiece; When the gap between probe and workpiece produces tunnel effect during less than 5 nanometers; The electric current that flows through this gap is very responsive to gap length; Keep the constant or maintenance clearance constant of tunnel current,, can obtain body surface three-dimensional size and contour shape through three-dimensional Piezoelectric Ceramic.This method can obtain the vertical direction resolution of 0.01nm and the horizontal direction resolution of 0.1nm.The X ray interferometer is to produce diffraction through the x-ray bombardment silicon wafer to measure, because the spacing of lattice of silicon is very stable, is about 0.2nm, can realize nanometer accuracy measurement.Fabry-Perot etalon micrometer system complex structure has very high resolution, can reach 2.1 * 10
-8Nm.Germany Heidenhain company is the development and production grating chi that gone out to have nanometer resolution, and its resolution is: 2nm, maximum range is: 20mm.
Though above measuring method can be carried out the measurement of nanometer or nano-precision; But a common weakness is arranged; Be exactly these nano measurement technology all are non-contact measurements, in most of the cases, can not directly be used for the measurement of parts such as machinery, electronics or the measurement of mechanical shift.Therefore, invent a kind of nanometer displacement sensor of contact, have great importance for the measurement of parts such as machinery, electronics or mechanical shift.
Summary of the invention
The objective of the invention is to overcome in the above-mentioned existing nano measurement technology all is non-contact measurement weak points, and a kind of nanometer displacement sensor of contact is provided for nanometer technologies such as nano measurement and nanoprocessings.
Technical scheme of the present invention can reach through following measure:
A kind of contact type nanometer displacement sensor based on tunnel effect; Comprise testee and insulation crust, it is characterized in that: gauge head is set around said testee, and the gauge head upper end is connected on the guide rod; Graphite block be arranged on guide rod above, micro-feed mechanism is done the time spent and can be driven gauge head and move; Above graphite block, probe is set, probe is connected on the piezoelectric ceramic tube; Piezoelectric ceramic tube is connected with piezoelectric ceramic actuator; Probe is elongation or contraction under the piezoelectric ceramic actuator action, and graphite block and probe constitute tunnel effect, in bias circuit, form tunnel current; Signal acquiring system is connected in the bias circuit; Signal acquiring system is gathered the tunnel current signal in the bias circuit; After signal processing system is handled, be conveyed in the piezoelectric ceramic actuator, as the feedback drive signal of piezoelectric ceramic actuator, the control piezoelectric ceramic actuator produces action.
Further characteristic is: after micro-feed mechanism drove gauge head and testee contacts, micro-feed mechanism continued feeding, and gauge head promotes graphite block near probe through guide rod under the effect of testee, get into the tunnel effect state.
Constitute spring shock absorption by back-moving spring, constitute the magnetically damped vibration damping through weak magnetic permanent magnet rings again.
The present invention uses tunnel effect and constitutes nanometer displacement sensor; Probe is installed in through on the piezoelectric ceramic tube of precision calibration, and graphite block is installed in the gauge head upper end, between probe and graphite block, constitutes bias circuit; When the distance between probe and the graphite block reaches a few nanometer; Bias circuit produces tunnel current, according to tunnel effect, and tunnel current: I=V
oExp (d), between tunnel current and probe and the graphite block apart from the exponentially function, measure the I of tunnel current, just can calculate between probe and the graphite block apart from d.When off working state; Distance between probe and the graphite block is about 3-5 μ m, makes sensor slow near testee through micro-feed mechanism during measurement, when the gauge head of sensor contacts with testee; Micro-feed mechanism continue graphite block that feeding promotes the gauge head upper end to probe near; Graphite block on gauge head and the distance between the probe reach when producing tunnel effect, and micro-feed mechanism quits work, and sensor gets into the measurement state.The present invention adopts the continuous current working method to measure; Through the distance between micro-feed mechanism adjustment probe and the graphite block; Tunnel current is set at a steady state value, and when extremely small variation took place in the position of testee, onesize variation took place in the distance between probe and the graphite block; Tunnel current changes thereupon and departs from setting value; Variable quantity FEEDBACK CONTROL with tunnel current is added in the driving voltage on the piezoelectric ceramic tube, makes the piezoelectric ceramic tube elongation or shrinks the constant distance between maintenance probe and the graphite block; Thereby make tunnel current remain on setting value, note the small displacement that driving voltage value on the piezoelectric ceramics just can calculate object.
Contact type nanometer displacement sensor based on tunnel effect of the present invention; It is a kind of nanometer displacement sensor of contact; Can measure and be in contact with one another trickle variation to nano-grade displacement between the part, have great importance for the measurement of part such as machinery, electronics or mechanical shift.Sensor of the present invention is easy to operate and control, measuring accuracy is high.On the basis of the contact type nanometer displacement sensor based on tunnel effect of the present invention, can make up nano measurement systems such as nanometer roundness measuring system.
Description of drawings
Below in conjunction with accompanying drawing the present invention is further described, the drawing of accompanying drawing is explained as follows:
Fig. 1 is based on the contact type nanometer displacement sensor principle schematic of tunnel effect.
Fig. 2 is based on the contact type nanometer displacement sensor structural representation of tunnel effect.
Numbering 1-gauge head, 2-testee, 3-guide rod, 4-graphite block, 5-bias circuit, 6-signal acquiring system, 7-signal processing system, 8-piezoelectric ceramic actuator, 9-piezoelectric ceramic tube, 10-probe, 11-micro-feed mechanism among Fig. 1.
The weak magnetic permanent magnet rings of 12-, 13-insulation crust, 14-insulating ceramics, 15-RTV insulator, 16-back-moving spring, 17-teflon insulation layer, 18-bias line, 19-base of ceramic among Fig. 2.
Embodiment
In Fig. 1,2; Contact type nanometer displacement sensor based on tunnel effect of the present invention comprises gauge head 1, testee 2, guide rod 3, graphite block 4, bias circuit 5, signal acquiring system 6, signal processing system 7, piezoelectric ceramic actuator 8, piezoelectric ceramic tube 9, probe 10, micro-feed mechanism 11, weak magnetic permanent magnet rings 12, insulation crust 13, insulating ceramics 14, RTV insulator 15, back-moving spring 16, teflon insulation layer 17, bias line 18 and base of ceramic 19; Gauge head 1 is arranged on (being arranged on above it among the figure) around the testee 2; Gauge head 1 upper end is connected on the guide rod 3; Graphite block 4 is arranged on the top or top of guide rod 3, and micro-feed mechanism 11 is done the time spent and can be driven gauge head 1 and move, micro-feed mechanism 11 or drive gauge heads 1 through guide rod 3 and move; Micro-feed mechanism 11 is the electronic or hand gears that can produce feed motion in the prior art.Above graphite block 4; Probe 10 is set; Probe 10 is connected on the piezoelectric ceramic tube 9, and piezoelectric ceramic tube 9 is connected with piezoelectric ceramic actuator 8, probe 10, piezoelectric ceramic tube 9 elongation or contraction under piezoelectric ceramic actuator 8 actions; Constitute tunnel effect through graphite block 4 and the probe that can stretch out or shorten 10, in bias circuit 5, form tunnel current.Signal acquiring system 6 is connected in the bias circuit 5; The tunnel current signal that signal acquiring system 6 is gathered in the bias circuit 5; After signal processing system 7 is handled, be conveyed in the piezoelectric ceramic actuator 8, as the feedback drive signal of piezoelectric ceramic actuator 8, control piezoelectric ceramic actuator 8 produces action; To drive piezoelectric ceramic tube 9 elongations or to shrink, constant thereby the gap d between control graphite block 4 and the probe 10 keeps.Bias circuit of the present invention 5, signal acquiring system 6, signal processing system 7, piezoelectric ceramic actuator 8, piezoelectric ceramic tube 9, probe 10 etc. are devices of the prior art.
Shown in Figure 2 is a kind of specific embodiment structural representation of displacement transducer of the present invention; In order to reduce even to eliminate various vibration factors in the environment to the influence of sensor measurement precision; Weak magnetic permanent magnet rings 12, insulating ceramics 14, RTV insulator 15, back-moving spring 16, teflon insulation layer 17 are set in the insulation crust 13 of sensor; Constitute spring shock absorption by back-moving spring 16; Constitute the magnetically damped vibration damping through weak magnetic permanent magnet rings 12 again, the various vibration factors in the elimination environment are to the influence of sensor measurement precision.Graphite block 4 is arranged on above the insulating ceramics 14, and RTV insulator 15 is arranged on around the probe 10, reduces probe 10 as far as possible and receives external influence, to improve measuring accuracy; Back-moving spring 16 produces elastic force, makes it have reset response, and guide rod 3 can reset with gauge head 1; Around piezoelectric ceramic tube 9, teflon insulation layer 17 is set, increases substantially its insulating property.Bias line 18 is parts of bias circuit 5, is transferred to the outside through the hole on the insulation crust 13, is connected with the miscellaneous part of bias circuit, constitutes bias circuit 5.
Surveying work principle of the present invention: drive gauge head 1 during micro-feed mechanism 11 work and move, when gauge head 1 contacted with testee 2, micro-feed mechanism 11 continued to drive; Gauge head 1 through guide rod 3 promote graphite blocks 4 to probe 10 near; When the gap d between graphite block 4 and the probe 10 reached a few nanometer, the gap was breakdown, and bias circuit 5 produces tunnel current; At this moment micro-feed mechanism 11 feed-disablings, sensor gets into duty.When the micro displacement variation takes place in testee 2; Gap d between graphite block 4 and the probe 10 will change thereupon; Tunnel current changes, and sends into signal processing system 7 after the variation collection of signal acquiring system 6 with tunnel current, and signal processing system 7 is with the variation FEEDBACK CONTROL piezoelectric ceramic actuator 8 of tunnel current; Piezoelectric ceramic actuator 8 control piezoelectric ceramic tubes, 9 elongations or contraction; Keep the constant distance between probe 10 and the graphite block 4, thereby make tunnel current remain on setting value, note the small displacement that driving voltage value on the piezoelectric ceramics just can calculate object.
Claims (4)
1. contact type nanometer displacement sensor based on tunnel effect; Comprise testee (2) and insulation crust (13); It is characterized in that: gauge head (1) is set on every side at said testee (2); Gauge head (1) upper end is connected on the guide rod (3), graphite block (4) be arranged on guide rod (3) above, micro-feed mechanism (11) is done the time spent and can be driven gauge head (1) and move; Top in graphite block (4); Probe (10) is set; Probe (10) is connected on the piezoelectric ceramic tube (9), and piezoelectric ceramic tube (9) is connected with piezoelectric ceramic actuator (8), and probe (10) is elongation or contraction under piezoelectric ceramic actuator (8) action; Graphite block (4) constitutes tunnel effect with probe (10), in bias circuit (5), forms tunnel current; Signal acquiring system (6) is connected in the bias circuit (5); Signal acquiring system (6) is gathered the tunnel current signal in the bias circuit (5);, signal processing system (7) is conveyed in the piezoelectric ceramic actuator (8) after handling; As the feedback drive signal of piezoelectric ceramic actuator (8), control piezoelectric ceramic actuator (8) produces action.
2. a kind of contact type nanometer displacement sensor according to claim 1 based on tunnel effect; It is characterized in that: after micro-feed mechanism (11) drives gauge head (1) and testee (2) contacts; Micro-feed mechanism (11) continues feeding; Gauge head (1) promotes graphite block (4) near probe (10) through guide rod (3) under the effect of testee (2), get into the tunnel effect state.
3. a kind of contact type nanometer displacement sensor based on tunnel effect according to claim 1 and 2 is characterized in that: signal processing system (7) is noted the driving voltage value on the piezoelectric ceramic actuator (8), calculates the small displacement of testee (2).
4. according to claim 1 or 2 or described a kind of contact type nanometer displacement sensor based on tunnel effect; It is characterized in that: weak magnetic permanent magnet rings (12) and back-moving spring (16) are set in the insulation crust (13); Constitute spring shock absorption by back-moving spring (16), constitute the magnetically damped vibration damping through weak magnetic permanent magnet rings (12) again.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101011541A CN101769711B (en) | 2010-01-26 | 2010-01-26 | Tunnel effect based contact type nanometer displacement sensor |
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| CN2010101011541A CN101769711B (en) | 2010-01-26 | 2010-01-26 | Tunnel effect based contact type nanometer displacement sensor |
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| CN101769711A CN101769711A (en) | 2010-07-07 |
| CN101769711B true CN101769711B (en) | 2012-09-05 |
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| CN105891547A (en) * | 2014-09-18 | 2016-08-24 | 扬州思必得仪器设备有限公司 | Tunneling fiber |
| CN104567644A (en) * | 2014-12-18 | 2015-04-29 | 浙江工业职业技术学院 | Digital measurement device for infinitesimal displacement |
| CN105091737B (en) * | 2015-08-24 | 2018-09-14 | 扬州大学 | A kind of cantilever beam yaw displacement measuring device |
| CN105115589A (en) * | 2015-08-24 | 2015-12-02 | 扬州大学 | Underwater sound tester based on tunnel microscope |
| CN109187640B (en) * | 2018-08-07 | 2020-10-23 | 哈尔滨工业大学 | Contact or non-contact composite principle nano sensing method and device |
| CN109211079B (en) * | 2018-08-07 | 2020-10-23 | 哈尔滨工业大学 | Quantum tunneling and spherical scattering field composite principle sensing method and device |
| CN109186435B (en) * | 2018-08-07 | 2020-10-27 | 哈尔滨工业大学 | Contact/non-contact composite principle nano sensing method and device |
| CN109186434B (en) * | 2018-08-07 | 2022-11-15 | 哈尔滨工业大学 | Non-contact sub-nanometer sensing method and device based on three-dimensional quantum tunneling |
| RU2713964C1 (en) * | 2019-07-05 | 2020-02-11 | Анатолий Борисович Попов | Direct displacement converter for micromechanical devices (displacement sensor) |
| CN111238475B (en) * | 2020-02-11 | 2020-11-06 | 清华大学 | Tunnel type MEMS satellite-borne attitude sensor based on gravity gradient torque measurement |
| CN111693202A (en) * | 2020-07-01 | 2020-09-22 | 中国计量大学 | Novel pressure sensor based on quantum tunneling effect |
| CN112683152B (en) * | 2020-12-18 | 2022-04-22 | 重庆理工大学 | Contact type micro-displacement detection device |
| CN115464369A (en) * | 2022-10-31 | 2022-12-13 | 常州市一鑫电气有限公司 | Output shaft press-fitting machine and process for quick model change of motor |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0361932A2 (en) * | 1988-09-30 | 1990-04-04 | Canon Kabushiki Kaisha | Scanning tunnel-current-detecting device and method |
| US4941753A (en) * | 1989-04-07 | 1990-07-17 | International Business Machines Corp. | Absorption microscopy and/or spectroscopy with scanning tunneling microscopy control |
| US4998016A (en) * | 1988-11-09 | 1991-03-05 | Canon Kabushiki Kaisha | Probe unit, driving method thereof, and scanning device for detecting tunnel current having said probe unit |
| US5132533A (en) * | 1989-12-08 | 1992-07-21 | Canon Kabushiki Kaisha | Method for forming probe and apparatus therefor |
| CN1071249A (en) * | 1992-09-05 | 1993-04-21 | 武汉工业大学 | Measure the method for micrometric displacement with tunnel effect principle |
| CN1328634A (en) * | 1998-05-13 | 2001-12-26 | 结晶及技术有限公司 | Cantilever with whisker-grown probe and method for producing thereof |
| CN1508510A (en) * | 2002-12-13 | 2004-06-30 | 中国科学院自动化研究所 | Step-recursion nano-level measuring system based on high-precision inductive probe |
| CN1877277A (en) * | 2005-06-09 | 2006-12-13 | Tdk株式会社 | Micro structure, cantilever, scanning probe microscope and a method of measuring deformation quantity for the fine structure |
-
2010
- 2010-01-26 CN CN2010101011541A patent/CN101769711B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0361932A2 (en) * | 1988-09-30 | 1990-04-04 | Canon Kabushiki Kaisha | Scanning tunnel-current-detecting device and method |
| US4998016A (en) * | 1988-11-09 | 1991-03-05 | Canon Kabushiki Kaisha | Probe unit, driving method thereof, and scanning device for detecting tunnel current having said probe unit |
| US4941753A (en) * | 1989-04-07 | 1990-07-17 | International Business Machines Corp. | Absorption microscopy and/or spectroscopy with scanning tunneling microscopy control |
| US5132533A (en) * | 1989-12-08 | 1992-07-21 | Canon Kabushiki Kaisha | Method for forming probe and apparatus therefor |
| CN1071249A (en) * | 1992-09-05 | 1993-04-21 | 武汉工业大学 | Measure the method for micrometric displacement with tunnel effect principle |
| CN1328634A (en) * | 1998-05-13 | 2001-12-26 | 结晶及技术有限公司 | Cantilever with whisker-grown probe and method for producing thereof |
| CN1508510A (en) * | 2002-12-13 | 2004-06-30 | 中国科学院自动化研究所 | Step-recursion nano-level measuring system based on high-precision inductive probe |
| CN1877277A (en) * | 2005-06-09 | 2006-12-13 | Tdk株式会社 | Micro structure, cantilever, scanning probe microscope and a method of measuring deformation quantity for the fine structure |
Non-Patent Citations (4)
| Title |
|---|
| JP特开6-194157A 1994.07.15 |
| 李梦超，傅星，魏小蕾，胡小唐.基于隧道效应的纳米级振动传感器的研究.《压电与声光》.2004,(第6期),全文. * |
| 李梦超.隧道状态下纳米级振动检测技术的研究.《中国优秀硕士学位论文全文数据库》.2004,全文. * |
| 魏小蕾.基于STM原理的纳米级振动传感器的研究.《中国学位论文全文库》.2003,全文. * |
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