CN101750912A - Photoresist detergent composition - Google Patents

Photoresist detergent composition Download PDF

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Publication number
CN101750912A
CN101750912A CN200810203715A CN200810203715A CN101750912A CN 101750912 A CN101750912 A CN 101750912A CN 200810203715 A CN200810203715 A CN 200810203715A CN 200810203715 A CN200810203715 A CN 200810203715A CN 101750912 A CN101750912 A CN 101750912A
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CN
China
Prior art keywords
boric acid
borate
photoresist
cleansing composition
ether
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200810203715A
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Chinese (zh)
Inventor
史永涛
彭洪修
曹惠英
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Anji Microelectronics Shanghai Co Ltd
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Anji Microelectronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai Co Ltd filed Critical Anji Microelectronics Shanghai Co Ltd
Priority to CN200810203715A priority Critical patent/CN101750912A/en
Priority to CN2009801483637A priority patent/CN102227689A/en
Priority to PCT/CN2009/001285 priority patent/WO2010060274A1/en
Publication of CN101750912A publication Critical patent/CN101750912A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C11D2111/22—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3445—Organic compounds containing sulfur containing sulfino groups, e.g. dimethyl sulfoxide
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur

Abstract

The invention discloses a photoresist detergent composition, which comprises quaternary ammonium hydroxides, water, alkyl glycol ether with 3 to 18 alkyl glycol carbon atoms, dimethyl sulfoxide, and at least one corrosion inhibitor selecting from boric acid, borate and boric acid ester. The photoresist detergent composition can also comprise a polar organic cosolvent, a surface active agent and/or other corrosion inhibitors. The photoresist detergent composition can remove the photoresist (particularly thick film negative photoresist) with the thickness of over 20 mu m on the substrates such as metals, metal alloys or dielectric mediums and the like, and other etching residues; and meanwhile, the composition has low causticity to the metals such as aluminum, copper and the like and the nonmetallic materials such as silicon dioxide and the like, thus, the composition has good application prospect in the micro-electronics fields such as semiconductor chip cleaning, and the like.

Description

A kind of photoresist cleansing composition
Technical field
The present invention relates to a kind of cleansing composition in the semiconductor fabrication process, relate to a kind of photoresist cleansing composition particularly.
Background technology
In common semiconductor fabrication process, at first go up the coating that forms photoresist on surfaces such as silicon dioxide, Cu metals such as (copper) and low-k materials, utilize suitable mask to expose, develop, according to characteristic with photoresist, remove the photoresist of exposure or unexposed portion, form the photoresist pattern at desired position, on this photoresist pattern, carry out plasma etching or reactant gas etching then, carry out figure transfer.Low temperature cleaning fast is the important directions of semiconductor wafer fabrication process development.The negative photoresist of the above thickness of 20 μ m is applied in the semiconductor wafer fabrication process just gradually, and at present industrial most photoresist clean-out system is better to the cleansing power of positive photoresist, but can not thoroughly remove on the wafer especially thick film negative photoresist of the negative photoresist with cross-linked structure after exposure and etching.
Carry out in the chemical cleaning process of photoresist at semiconductor wafer, clean-out system regular meeting causes the corrosion of wafer pattern and base material.Particularly utilizing chemical to remove in the process of photoresist and etch residue, metal (especially aluminium and copper etc. are than the active metal) corrosion is comparatively generally and very serious problem, often causes the remarkable reduction of wafer yield.
At present, the photoresist cleansing composition mainly is made up of highly basic, polar organic solvent and/or water etc., by immersing semiconductor wafer in the clean-out system or utilizing clean-out system flushing semiconductor wafer, removes the photoresist on the semiconductor wafer.
Highly basic such as potassium hydroxide, quaternary ammonium hydroxide and hydramine etc. can dissolve photoresist and/or photoresist residue that etching produced.Highly basic content is crossed when hanging down, and clean-out system is to the removal scarce capacity of photoresist and/or the photoresist residue that etching produced; But during the highly basic too high levels, clean-out system easily causes the corrosion of wafer pattern and base material.Compare with the clean-out system of being made up of hydramine, the clean-out system that contains potassium hydroxide or quaternary ammonium hydroxide is better to the removal ability of photoresist and/or the photoresist residue that etching produced.But the clean-out system that contains potassium hydroxide easily causes the corrosion of wafer pattern and base material, and its to the removal of photoresist to peel off mode, make photoresist form fragment shape overburden or gluey swelling thing, cause deposition or the adhesion of photoresist easily, even cause the damage of wafer pattern in wafer surface.The clean-out system that contains quaternary ammonium hydroxide has concurrently the removal of photoresist and peels off and dissolve two kinds of effects, can not cause deposition or the adhesion of photoresist in wafer surface.
Polar organic solvent can dissolve photoresist and/or photoresist residue that etching produced, improves chemical to organic cleansing power.Polar organic solvent content is crossed when hanging down, and clean-out system is to the removal scarce capacity of photoresist and/or the photoresist residue that etching produced; But during the polar organic solvent too high levels, the corresponding reduction of highly basic content in the clean-out system makes clean-out system weaken the removal ability of photoresist and/or the photoresist residue that etching produced.
In order to improve hydrolysis and/or the dissolving power of clean-out system to photoresist and/or the photoresist residue that etching produced, the water in the chemical is essential sometimes.But when liquid water content was too high, clean-out system was to the removal scarce capacity of photoresist and/or the photoresist residue that etching produced, and easily caused the corrosion of wafer pattern and base material.
The photoresist clean-out system be made up of hydramine and organic polar solvent has been proposed among the US4617251.Semiconductor wafer is immersed in this clean-out system, under 95 ℃, remove the positive photoresist on the wafer.Do not contain water in this clean-out system, and it is to the cleansing power deficiency of negative photoresist.
The photoresist clean-out system be made up of hydramine, water-miscible organic solvent, water, organic phenolic compounds, triazole compounds and polysiloxane surfactant has been proposed among the US6140027.Semiconductor wafer is immersed in this clean-out system, under 20～50 ℃, remove the photoresist residue that photoresist on the wafer and etching are produced.This clean-out system adopts organic phenolic compounds and triazole compounds as the corrosion inhibiter that suppresses metal erosion.Organic phenolic compounds is harmful, and can pollute environment, and this clean-out system is to the cleansing power deficiency of negative photoresist.
The photoresist clean-out system be made up of less than 1% water potassium hydroxide, propylene glycol, N-Methyl pyrrolidone, surfactant, 1,3 butylene glycol, diglycolamine and quality percentage composition has been proposed among the US5962197.Semiconductor wafer is immersed in this clean-out system, under 90～110 ℃, remove the photoresist on the wafer.Contain potassium hydroxide in this clean-out system, higher to the corrosion of wafer substrate, and also its stripping photoresist formed fragment shape overburden or gluey swelling thing can deposit or adhesion on wafer surface, causes the damage of the residual and wafer pattern of photoresist.
The photoresist clean-out system be made up of Tetramethylammonium hydroxide, N-methylmorpholine-N-oxide, water and 2-mercaptobenzimidazole has been proposed among the WO2004059700.Semiconductor wafer is immersed in this clean-out system, under 70 ℃, remove the photoresist on the wafer.This clean-out system needs cleaning photoetching glue under higher temperature, and is slightly high to the corrosion of semiconductor wafer pattern and base material, and slightly inadequate to the cleansing power of photoresist.
The photoresist clean-out system that 3 '-dimethyl-2-imidazolidinone and water are formed has been proposed among the US6040117 by quaternary ammonium hydroxide, dimethyl sulfoxide (DMSO), 1.Semiconductor wafer is immersed in this clean-out system, at the photoresist of removing the above thickness of 10 μ m on metal (gold, copper, lead or the nickel) base material under 40～95 ℃.This clean-out system adopt price comparatively expensive 1,3 '-dimethyl-2-imidazolidinone is as organic cosolvent, and do not contain the corrosion inhibiter that suppresses metal (especially aluminium etc. than the active metal) corrosion.This clean-out system needs cleaning photoetching glue under higher temperature, and is slightly high to the corrosion of semiconductor wafer pattern and base material.
The photoresist clean-out system be made up of quaternary ammonium hydroxide, water-miscible organic solvent, organic amine, binary alcohol and water has been proposed among the JP2001215736.Semiconductor wafer is immersed in this clean-out system, under 20～90 ℃, remove the photoresist of the 20 μ m～40 μ m thickness on the wafer.This clean-out system adopts dibasic alcohol as the corrosion inhibiter that suppresses metal erosion, but dibasic alcohol is very weak to the inhibition ability of metal erosion, and can reduce the cleansing power of clean-out system to photoresist especially negative photoresist.This clean-out system is slightly high to the corrosion of semiconductor wafer pattern and base material.
The photoresist clean-out system be made up of quaternary ammonium hydroxide, N-Methyl pyrrolidone, diethanolamine or triethanolamine, water and methyl alcohol or ethanol has been proposed among the JP2004093678.Semiconductor wafer is immersed in this clean-out system, under 15～80 ℃, remove the photoresist of the above thickness of 10 μ m on the wafer.This clean-out system employing methyl alcohol or ethanol are as the solubilizer of quaternary ammonium hydroxide, but the flash-point of methyl alcohol or ethanol is low excessively, and can reduce the cleansing power of clean-out system to photoresist especially negative photoresist.This clean-out system does not contain the corrosion inhibiter that suppresses metal (especially aluminium and copper etc. are than the active metal) corrosion.This clean-out system is slightly high to the corrosion of semiconductor wafer pattern and base material.
In sum, existing photoresist clean-out system is to the cleansing power deficiency of the higher photoresist of thickness, and perhaps the corrosivity to semiconductor wafer pattern and base material is stronger, has bigger defective.
Summary of the invention
The technical problem to be solved in the present invention be at existing photoresist clean-out system exist to thick film photolithography glue cleansing power deficiency, to the stronger and environmentally harmful defective of the corrosivity of semiconductor wafer pattern and base material, a kind of photoresist cleansing composition strong and lower to the corrosivity of semiconductor wafer pattern and base material, as to be beneficial to environmental protection to thick film photolithography glue cleansing power is provided.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of photoresist cleansing composition comprises quaternary ammonium hydroxide, water, alkyl diol aryl ether, dimethyl sulfoxide (DMSO) and corrosion inhibiter; Wherein, the carbon atom number of alkyl diol is 3～18 in the described alkyl diol aryl ether, and described sustained release agent is selected from one or more in boric acid, borate and the borate.
Among the present invention, described quaternary ammonium hydroxide is preferable is selected from Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH, TBAH and the benzyltrimethylammonium hydroxide one or more, better be selected from Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide and the TBAH one or more, best is Tetramethylammonium hydroxide.That its content is preferable is 0.1～10wt%, and that better is 1～5wt%.
Among the present invention, that the content of described water is preferable is 0.2～15wt%, and that better is 0.5～10wt%.
Among the present invention, described alkyl diol aryl ether is preferable is selected from propylene glycol list phenyl ether, Isopropanediol list phenyl ether, diethylene glycol list phenyl ether, the single phenyl ether of dipropylene glycol, di-isopropylene glycol list phenyl ether, triethylene glycol list phenyl ether, tripropylene glycol list phenyl ether, three Isopropanediol list phenyl ethers, six condensed ethandiol list phenyl ethers, the six propylene glycol list phenyl ethers that contract, the six Isopropanediol list phenyl ethers that contract, the propylene glycol single-benzyl ether, in Isopropanediol single-benzyl ether and the hexanediol list naphthyl ether one or more, the better propylene glycol list phenyl ether that is selected from, in single phenyl ether of dipropylene glycol and the propylene glycol single-benzyl ether one or more.That the content of described alkyl diol aryl ether is preferable is 0.1～65wt%, and that better is 0.5～20.0wt%.Described alkyl diol aryl ether can improve the solubleness of Tetramethylammonium hydroxide in dimethyl sulfoxide (DMSO), and the harm of environment is lower than ethylene glycol alkyl ether and ethylene glycol aryl ether etc., is more conducive to protect environment.
Among the present invention, that the content of described dimethyl sulfoxide (DMSO) is preferable is 1～98wt%, and that better is 30～90wt%.
Among the present invention, described boric acid, borate and borate are preferable is selected from boric acid, phenyl boric acid, the 2-methylphenylboronic acid, the 3-methylphenylboronic acid, the 4-methylphenylboronic acid, 2,3-dimethyl benzene boric acid, 4-ethylbenzene boric acid, 4-propylbenzene boric acid, 4-butyl benzene boric acid, the 2-methoxyphenylboronic acid, the 3-methoxyphenylboronic acid, the 4-methoxyphenylboronic acid, 3,4-dimethoxy phenyl boric acid, 2-carboxyl phenyl boric acid, 3-carboxyl phenyl boric acid, 4-carboxyl phenyl boric acid, 2-methylol phenyl boric acid, 3-methylol phenyl boric acid, 4-methylol phenyl boric acid, the 2-thienyl boric acid, 3 thienylboronic acid, naphthalene boronic acids, ammonium borate, the tetramethyl ammonium borate, the tetraethyl ammonium borate, the tetrapropyl ammonium borate, tetrabutyl ammonium borate, the benzyl trimethyl ammonium borate, the boric acid ethanolamine salt, the boric acid diethanolamine salt, triethanolamine borate salt, boric acid diglycol amine salt, boric acid isopropyl alcohol amine salt, boric acid methyl ethanol amine salt, boric acid methyldiethanolamine salt, trimethylborate, triethyl borate, triproylborate, butyl borate, the isoamyl glycol borate ester, duplex catechol borate, in boric acid pinacol ester and the boric acid imidazoline ester one or more, the better boric acid that is selected from, phenyl boric acid, 2-carboxyl phenyl boric acid, 2-methylol phenyl boric acid, the tetramethyl ammonium borate, the tetraethyl ammonium borate, the boric acid ethanolamine salt, triethanolamine borate salt, in boric acid diglycol amine salt and the duplex catechol borate one or more.That its content is preferable is 0.01～10wt%, and that better is 0.1～5wt%.
Among the present invention, described photoresist cleansing composition also can further contain and is selected from polarity organic cosolvent, surfactant and other corrosion inhibiter except that boric acid, borate and borate one or more.What described polarity organic cosolvent content was preferable is≤50wt%, but does not comprise 0wt%, and that better is 5～30wt%; What described surface-active contents was preferable is≤5wt%, but does not comprise 0wt%, and that better is 0.05～3.0wt%; What described other corrosion inhibiter content except that the corrosion inhibiter of boric acid, borate and borate was preferable is≤5.0wt%, but does not comprise 0wt%, and that better is 0.05～3.0wt%.
Among the present invention, described polarity organic cosolvent is preferable is selected from sulfoxide, sulfone, imidazolidinone, hydramine and the alkylene glycol monoalkyl ether one or more.What wherein, described sulfoxide was preferable is the diethyl sulfoxide and/or the first and second basic sulfoxides; Described sulfone is preferable is selected from methyl sulfone, ethyl sulfone and the sulfolane one or more, and better is sulfolane; Described imidazolidinone is preferable is selected from 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone and 1, and one or more in 3-diethyl-2-imidazolidinone, better is 1,3-dimethyl-2-imidazolidinone; Described hydramine is preferable is selected from monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyldiethanolamine, dimethylethanolamine and the AEEA one or more, better is selected from monoethanolamine, triethanolamine, diglycolamine and the methylethanolamine one or more; Described alkylene glycol monoalkyl ether is preferable is selected from diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, the single ether of dipropylene glycol and the dipropylene glycol monobutyl ether one or more, better is selected from diethylene glycol monomethyl ether, dipropylene glycol monomethyl ether and the dipropylene glycol monobutyl ether one or more.
Among the present invention, described surfactant is preferable is selected from polyvinyl alcohol (PVA), polyvinylpyrrolidone and the polyoxyethylene ether one or more, and better is polyvinylpyrrolidone and/or polyoxyethylene ether.What the number-average molecular weight of described surfactant was preferable is 500～20000, and better is 1000～10000.
Among the present invention, described other corrosion inhibiter except that boric acid, borate and borate is preferable is selected from alcamines, azole, phosphonic acid based and the polyacrylic corrosion inhibiter one or more.Wherein, described alcamines corrosion inhibiter is preferable is selected from monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyldiethanolamine, dimethylethanolamine and the AEEA one or more, better is selected from monoethanolamine, triethanolamine, diglycolamine and the methylethanolamine one or more; Described azole corrosion inhibiter is preferable is selected from benzotriazole, methyl benzotriazazole, the benzotriazole diethanolamine salt, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, the 2-mercaptobenzoxazole, dimercaptothiodiazole, 3-amino-1,2, the 4-triazole, 4-amino-1,2, the 4-triazole, 3-amino-5-sulfydryl-1,2, the 4-triazole, 3,5-diaminostilbene, 2, the 4-triazole, 4-amino-5-sulfydryl-1,2, the 4-triazole, in 5-amino-tetrazole and the 1-phenyl-5-mercapto tetrazole one or more, the better benzotriazole that is selected from, methyl benzotriazazole, the benzotriazole diethanolamine salt, 3-amino-1,2, the 4-triazole, 4-amino-1,2, the 4-triazole, 3-amino-5-sulfydryl-1,2, one or more in 4-triazole and the 5-amino-tetrazole; Described phosphonic acid based corrosion inhibiter is preferable is selected from 1-hydroxy ethylene-1,1-di 2 ethylhexyl phosphonic acid, Amino Trimethylene Phosphonic Acid, 2-phosphonic acids butane-1,2, in 4-tricarboxylic acids, ethylenediamine tetramethylene phosphonic acid and the diethylenetriamine pentamethylene phosphonic acids one or more, the better 2-phosphonic acids butane-1 that is selected from, 2, one or more in 4-tricarboxylic acids, ethylenediamine tetramethylene phosphonic acid and the diethylenetriamine pentamethylene phosphonic acids.
Among the present invention, described polyacrylic corrosion inhibiter is preferable is selected from acrylate copolymer and multipolymer thereof, methacrylate polymer and multipolymer thereof, the pure amine salt of acrylate copolymer, the pure amine salt of methacrylate polymer, the acrylate copolymer of polyoxyethylene modification and ester thereof and pure ammonium salt, and in the methacrylate polymer of polyoxyethylene modification and ester and the pure ammonium salt one or more, better acrylate copolymer or its multipolymer of being selected from, the pure amine salt of acrylate copolymer, the acrylate copolymer of polyoxyethylene modification and pure ammonium salt thereof, and in the methacrylate polymer of polyoxyethylene modification and the pure ammonium salt thereof one or more.What the number-average molecular weight of described polyacrylic corrosion inhibiter was preferable is 500～100000, and better is 1000～50000.Described polyacrylic corrosion inhibiter shows extremely strong inhibiting effect to the corrosion of metal such as aluminium.
Agents useful for same of the present invention and raw material are all commercially available to be got.
Photoresist cleansing composition of the present invention can be made by the simple mixing of top described component.
Photoresist cleansing composition of the present invention can use (between 20～85 ℃) in wider temperature range.Cleaning method can be with reference to following steps: the semiconductor wafer that will contain photoresist immerses in the cleansing composition, utilizes constant temperature oscillator slowly to vibrate under 20～85 ℃, dries up with high pure nitrogen behind deionized water wash then.
Than prior art, beneficial effect of the present invention is as follows:
(1) comparatively promptly photoresist and other etch residue of the above thickness of 20 μ m on the base materials such as clean metal, metal alloy or dielectric of photoresist cleansing composition of the present invention.
(2) the alkyl diol aryl ether that contains of photoresist cleansing composition of the present invention can improve the solubleness of quaternary ammonium hydroxide in dimethyl sulfoxide (DMSO).The increase of quaternary ammonium hydroxide solubleness helps improving among the present invention the photoresist cleansing composition to the photoresist especially cleansing power of thick film photolithography glue.
(3) alkyl diol aryl ether that contains in the photoresist cleansing composition of the present invention and the corrosion inhibiter that is selected from boric acid, borate and borate can form layer protecting film at wafer pattern and substrate surface, stop the attack to wafer pattern and base material such as halogen atom, hydroxide ion, thereby reduce the corrosion of wafer pattern and base material; Especially the corrosion inhibiter that is selected from boric acid, borate and borate that it contains shows good inhibition effect to the corrosion of metal such as aluminium.So it shows extremely weak corrosivity to nonmetallic materials such as metal such as aluminium and copper and silicon dioxide.
(4) photoresist cleansing composition of the present invention can be removed the thick film negative photoresist of the high-crosslinking-degree on the semiconductor wafer by the mode of dissolving, avoids deposition or the adhesion of photoresist in wafer surface, and can not cause the corrosion or the damage of wafer pattern.
(5) photoresist cleansing composition of the present invention can (20～85 ℃) use in wider temperature range.
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.Among the following embodiment, number percent is mass percent.
Embodiment 1～26
Table 1 has provided the prescription of photoresist clean-out system embodiment 1～26 of the present invention, presses listed component and content thereof in the table 1, simply mixes, and promptly makes each clean-out system.
Table 1 photoresist embodiment 1～26 of the present invention
Figure G2008102037151D0000091
Figure G2008102037151D0000101
Figure G2008102037151D0000121
Further specify beneficial effect of the present invention below by the preferred effect embodiment of the present invention.
Effect embodiment
Table 2 has provided the prescription of contrast clean-out system 1 '～7 ' and photoresist cleansing composition embodiment 27～42 of the present invention, presses listed component and content thereof in the table 2, simply mixes, and promptly makes each clean-out system.
Component and the content of table 2 comparative example clean-out system 1 '～7 ' and photoresist cleansing composition embodiment 27～42 of the present invention
Clean-out system Tetramethylammonium hydroxide Deionized water Propylene glycol list phenyl ether Dimethyl sulfoxide (DMSO) Boric acid Triethanolamine borate salt Sulfolane Monoethanolamine Polyoxyethylene ether (molecular weight is 10000) Benzotriazole The polymethylacrylic acid of polyoxyethylene modification (molecular weight is 10000)
??1’ ??1.00 ??4.00 ??/ ??95.00 ??/ ??/ ??/ ??/ ??/ ??/ ??/
??2’ ??1.50 ??4.00 ??/ ??94.00 ??/ ??/ ??/ ??/ ??/ ??0.50 ??/
??3’ ??2.00 ??4.00 ??/ ??93.40 ??/ ??/ ??/ ??/ ??0.10 ??0.50 ??/
Clean-out system Tetramethylammonium hydroxide Deionized water Propylene glycol list phenyl ether Dimethyl sulfoxide (DMSO) Boric acid Triethanolamine borate salt Sulfolane Monoethanolamine Polyoxyethylene ether (molecular weight is 10000) Benzotriazole The polymethylacrylic acid of polyoxyethylene modification (molecular weight is 10000)
??4’ ??2.00 ??6.00 ??/ ??71.50 ??/ ??/ ??20.00 ??/ ??/ ??0.50 ??/
??5’ ??2.00 ??3.00 ??/ ??89.50 ??/ ??/ ??/ ??5.00 ??/ ??0.50 ??/
??6’ ??3.00 ??6.00 ??5.00 ??86.00 ??/ ??/ ??/ ??/ ??/ ??/ ??/
??7’ ??3.00 ??6.00 ??/ ??91.00 ??/ ??/ ??/ ??/ ??/ ??/ ??/
??27 ??1.00 ??4.00 ??1.50 ??93.40 ??0.10 ??/ ??/ ??/ ??/ ??/ ??/
??28 ??1.50 ??4.00 ??3.00 ??91.40 ??/ ??0.10 ??/ ??/ ??/ ??/ ??/
??29 ??1.50 ??1.50 ??3.50 ??93.30 ??0.20 ??/ ??/ ??/ ??/ ??/ ??/
??30 ??2.00 ??4.00 ??4.00 ??89.00 ??/ ??0.30 ??/ ??0.50 ??/ ??/ ??0.20
??31 ??2.00 ??6.00 ??5.00 ??64.80 ??0.30 ??/ ??20.00 ??1.50 ??0.10 ??/ ??0.30
??32 ??2.00 ??3.00 ??6.00 ??84.50 ??0.30 ??0.50 ??/ ??3.00 ??/ ??0.20 ??0.50
??33 ??3.00 ??6.00 ??5.00 ??80.80 ??0.60 ??/ ??/ ??4.00 ??/ ??/ ??0.60
??34 ??3.50 ??3.50 ??8.00 ??68.10 ??/ ??0.90 ??10.00 ??5.00 ??0.10 ??/ ??0.90
??35 ??4.00 ??4.00 ??8.00 ??75.60 ??0.90 ??/ ??/ ??6.00 ??0.10 ??0.50 ??0.90
??36 ??4.50 ??4.50 ??10.00 ??69.00 ??1.20 ??0.60 ??/ ??9.00 ??/ ??/ ??1.20
??37 ??5.00 ??5.00 ??10.00 ??62.00 ??1.50 ??1.50 ??/ ??13.00 ??/ ??0.50 ??1.50
??38 ??2.30 ??3.00 ??6.00 ??43.00 ??0.50 ??/ ??30.00 ??15.00 ??0.20 ??/ ??/
??39 ??2.90 ??3.00 ??6.00 ??74.00 ??/ ??1.20 ??/ ??12.00 ??0.20 ??/ ??0.70
??40 ??3.50 ??4.00 ??9.00 ??74.90 ??1.00 ??/ ??/ ??6.00 ??/ ??0.60 ??1.00
??41 ??1.80 ??2.50 ??7.00 ??81.20 ??/ ??1.00 ??/ ??6.50 ??/ ??/ ??/
Clean-out system Tetramethylammonium hydroxide Deionized water Propylene glycol list phenyl ether Dimethyl sulfoxide (DMSO) Boric acid Triethanolamine borate salt Sulfolane Monoethanolamine Polyoxyethylene ether (molecular weight is 10000) Benzotriazole The polymethylacrylic acid of polyoxyethylene modification (molecular weight is 10000)
??42 ??2.60 ??2.90 ??8.00 ??76.60 ??0.80 ??/ ??/ ??8.00 ??0.30 ??/ ??0.80
Each component in the table 2 is proportionally mixed, make comparative example's clean-out system 1 '～7 ' and embodiment of the invention clean-out system 27～42.Wherein, have in comparative example's clean-out system 7 ' the Tetramethylammonium hydroxide of small quantities of particles shape, comparative example's clean-out system 1 '～6 ' and embodiment of the invention clean-out system 27～42 are the homogeneous phase solution of clear.
Comparative example's clean-out system 1 '～6 ' and 27～42 pairs of three kinds of blank wafer of embodiment of the invention clean-out system and the semiconductor wafer that contains photoresist are cleaned, and test result sees Table 3.
1, comparative example's clean-out system 1 '～6 ' and embodiment of the invention clean-out system 27～42 are used to clean blank Cu wafer, measure its corrosion situation for metal Cu.Method of testing and condition: the blank Cu wafer of 4 * 4cm is immersed in the clean-out system, under 20～85 ℃, utilize constant temperature oscillator vibration 60 minutes, behind deionized water wash, dry up then, utilize four utmost point probe machines to measure blank Cu chip etching front and rear surfaces changes in resistance and calculate with high pure nitrogen.The result is as shown in table 3.
2, comparative example's clean-out system 1 '～6 ' and embodiment of the invention clean-out system 27～42 are used to clean blank Al wafer, measure its corrosion situation for metal A l.Method of testing and condition: the blank Al wafer of 4 * 4cm is immersed in the clean-out system, under 20～85 ℃, utilize constant temperature oscillator vibration 60 minutes, behind deionized water wash, dry up then, utilize four utmost point probe machines to measure blank Al chip etching front and rear surfaces changes in resistance and calculate with high pure nitrogen.The result is as shown in table 3.
3, comparative example's clean-out system 1 '～6 ' and embodiment of the invention clean-out system 27～42 are used to clean blank tetraethoxysilane (TEOS) wafer, measure its corrosion situation for nonmetal TEOS.Method of testing and condition: the blank TEOS wafer of 4 * 4cm is immersed in the clean-out system, under 20～85 ℃, utilize constant temperature oscillator vibration 60 minutes, behind deionized water wash, dry up then with high pure nitrogen.The change calculations of utilizing the Nanospec6100 thicknessmeter to measure blank TEOS wafer cleaning front and back TEOS thickness obtains, and the result is as shown in table 3.
4, comparative example's clean-out system 1 '～6 ' and embodiment of the invention clean-out system 27～42 are used to clean photoresist on the semiconductor wafer.Cleaning method is as follows: (thickness is about 60 microns will to contain negativity esters of acrylic acid photoresist, and through overexposure and etching) semiconductor wafer (containing pattern) immerse in the clean-out system, under 20～85 ℃, utilize constant temperature oscillator vibration 1～30 minute, behind deionized water wash, dry up then with high pure nitrogen.The cleaning performance of photoresist and clean-out system are as shown in table 3 to the corrosion situation of wafer pattern.
The corrosivity of table 3 comparative example clean-out system 1 '～6 ' and 27～42 couples of metal Cu of embodiment of the invention clean-out system and Al and nonmetal TEOS and to the cleaning situation of negative photoresist
Embodiment Cleaning temperature (℃) The corrosion situation of metal Cu The corrosion situation of metal A l The corrosion situation of nonmetal TEOS Photoresist scavenging period (min) The photoresist wash result The corrosion situation of wafer pattern and base material
??1’ ??40 ??× ??× ??○ ??30 ??○ ??◎
??2’ ??35 ??△ ??× ??○ ??30 ??○ ??◎
??3’ ??30 ??△ ??× ??○ ??20 ??◎ ??○
??4’ ??20 ??× ??× ??○ ??25 ??◎ ??△
??5’ ??35 ??× ??× ??◎ ??20 ??◎ ??○
??6’ ??40 ??○ ??× ??◎ ??20 ??◎ ??×
??27 ??40 ??◎ ??◎ ??◎ ??30 ??○ ??◎
??28 ??40 ??◎ ??◎ ??◎ ??30 ??◎ ??◎
??29 ??55 ??◎ ??◎ ??◎ ??20 ??◎ ??◎
??30 ??50 ??◎ ??◎ ??◎ ??15 ??◎ ??◎
??31 ??45 ??◎ ??◎ ??◎ ??12 ??◎ ??◎
??32 ??75 ??◎ ??◎ ??◎ ??5 ??◎ ??◎
??33 ??35 ??◎ ??◎ ??◎ ??15 ??◎ ??◎
??34 ??65 ??◎ ??◎ ??◎ ??7 ??◎ ??◎
??35 ??30 ??◎ ??◎ ??◎ ??20 ??◎ ??◎
??36 ??25 ??◎ ??◎ ??◎ ??25 ??◎ ??◎
??37 ??20 ??◎ ??◎ ??◎ ??30 ??◎ ??◎
??38 ??85 ??◎ ??◎ ??◎ ??1 ??◎ ??◎
??39 ??70 ??◎ ??◎ ??◎ ??5 ??◎ ??◎
Embodiment Cleaning temperature (℃) The corrosion situation of metal Cu The corrosion situation of metal A l The corrosion situation of nonmetal TEOS Photoresist scavenging period (min) The photoresist wash result The corrosion situation of wafer pattern and base material
??40 ??55 ??◎ ??◎ ??◎ ??10 ??◎ ??◎
??41 ??80 ??◎ ??◎ ??◎ ??3 ??◎ ??◎
??42 ??60 ??◎ ??◎ ??◎ ??8 ??◎ ??◎
Corrosion situation: ◎ does not have corrosion substantially; The cleaning situation: ◎ removes fully;
Zero slightly corrosion; Zero small portion of residual;
The △ moderate corrosion; The more remnants of △;
* heavy corrosion.* abundant residues.
(thickness is about 150 microns will to contain the negativity esters of acrylic acid photoresist of high-crosslinking-degree, and through overexposure and etching) semiconductor wafer (containing pattern) immerse in the embodiment of the invention clean-out system 32～42 shown in the table 2, under 40～85 ℃, utilize constant temperature oscillator vibration 10～60 minutes, behind deionized water wash, dry up then with high pure nitrogen.The cleaning performance of photoresist and clean-out system are as shown in table 4 to the corrosion situation of wafer pattern.
The cleaning situation of 32～42 pairs of negativity esters of acrylic acids of embodiment clean-out system photoresist (thickness is about 150 microns) in table 4 table 2
Embodiment Cleaning temperature (℃) Photoresist scavenging period (min) The photoresist wash result The corrosion situation of wafer pattern and base material
??32 ??75 ??15 ??◎ ??◎
??33 ??55 ??35 ??◎ ??◎
??34 ??65 ??25 ??◎ ??◎
??35 ??50 ??48 ??◎ ??◎
??36 ??45 ??54 ??◎ ??◎
??37 ??40 ??60 ??◎ ??◎
??38 ??85 ??10 ??◎ ??◎
??39 ??70 ??20 ??◎ ??◎
Embodiment Cleaning temperature (℃) Photoresist scavenging period (min) The photoresist wash result The corrosion situation of wafer pattern and base material
??40 ??55 ??42 ??◎ ??◎
??41 ??80 ??12 ??◎ ??◎
??42 ??60 ??30 ??◎ ??◎
Corrosion situation: ◎ does not have corrosion substantially; The cleaning situation: ◎ removes fully;
Zero slightly corrosion; Zero small portion of residual;
The △ moderate corrosion; The more remnants of △;
* heavy corrosion.* abundant residues.
From table 3 and table 4 as can be seen, compare with comparative example's clean-out system 1 '～6 ', 27～42 pairs of thick film negativity of embodiment of the invention clean-out system esters of acrylic acid photoresist has good cleansing power, the serviceability temperature scope is wide, corrosivity to metal Cu and Al and nonmetal TEOS is low simultaneously, and wafer pattern is not had corrosion or damage.
In sum, comparatively promptly photoresist and other etch residue of the above thickness of 20 μ m on the base materials such as clean metal, metal alloy or dielectric of photoresist cleansing composition of the present invention.It shows extremely weak corrosivity to nonmetallic materials such as metal such as aluminium and copper and silicon dioxide, can't cause the corrosion or the damage of wafer pattern, and can use in wider temperature range (20～85 ℃).

Claims (27)

1. photoresist cleansing composition, comprise quaternary ammonium hydroxide, water, alkyl diol aryl ether, dimethyl sulfoxide (DMSO) and corrosion inhibiter, it is characterized in that, the carbon atom number of alkyl diol is 3～18 in the described alkyl diol aryl ether, and described corrosion inhibiter comprises and is selected from boric acid, borate and the borate one or more.
2. photoresist cleansing composition as claimed in claim 1, it is characterized in that described quaternary ammonium hydroxide is selected from one or more in Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH, TBAH and the benzyltrimethylammonium hydroxide.
3. photoresist cleansing composition as claimed in claim 1 is characterized in that, the content of described quaternary ammonium hydroxide is 0.1～10wt%.
4. photoresist cleansing composition as claimed in claim 3 is characterized in that, the content of described quaternary ammonium hydroxide is 1～5wt%.
5. photoresist cleansing composition as claimed in claim 1 is characterized in that, the content of described water is 0.2～15wt%.
6. photoresist cleansing composition as claimed in claim 5 is characterized in that, the content of described water is 0.5～10wt%.
7. photoresist cleansing composition as claimed in claim 1, it is characterized in that described alkyl diol aryl ether is selected from the single phenyl ether of propylene glycol list phenyl ether, Isopropanediol list phenyl ether, diethylene glycol list phenyl ether, dipropylene glycol, di-isopropylene glycol list phenyl ether, triethylene glycol list phenyl ether, tripropylene glycol list phenyl ether, three Isopropanediol list phenyl ethers, six condensed ethandiol list phenyl ethers, six contract in Isopropanediol list phenyl ether, propylene glycol single-benzyl ether, Isopropanediol single-benzyl ether and the hexanediol list naphthyl ether one or more of propylene glycol list phenyl ether, six that contract.
8. photoresist cleansing composition as claimed in claim 1 is characterized in that, the content of described alkyl diol aryl ether is 0.1～65wt%.
9. photoresist cleansing composition as claimed in claim 8 is characterized in that, the content of described alkyl diol aryl ether is 0.5～20.0wt%.
10. photoresist cleansing composition as claimed in claim 1 is characterized in that, the content of described dimethyl sulfoxide (DMSO) is 1～98wt%.
11. photoresist cleansing composition as claimed in claim 10 is characterized in that, the content of described dimethyl sulfoxide (DMSO) is 30～90wt%.
12. photoresist cleansing composition as claimed in claim 1, it is characterized in that, described boric acid, borate and borate are selected from boric acid, phenyl boric acid, the 2-methylphenylboronic acid, the 3-methylphenylboronic acid, the 4-methylphenylboronic acid, 2,3-dimethyl benzene boric acid, 4-ethylbenzene boric acid, 4-propylbenzene boric acid, 4-butyl benzene boric acid, the 2-methoxyphenylboronic acid, the 3-methoxyphenylboronic acid, the 4-methoxyphenylboronic acid, 3,4-dimethoxy phenyl boric acid, 2-carboxyl phenyl boric acid, 3-carboxyl phenyl boric acid, 4-carboxyl phenyl boric acid, 2-methylol phenyl boric acid, 3-methylol phenyl boric acid, 4-methylol phenyl boric acid, the 2-thienyl boric acid, 3 thienylboronic acid, naphthalene boronic acids, ammonium borate, the tetramethyl ammonium borate, the tetraethyl ammonium borate, the tetrapropyl ammonium borate, tetrabutyl ammonium borate, the benzyl trimethyl ammonium borate, the boric acid ethanolamine salt, the boric acid diethanolamine salt, triethanolamine borate salt, boric acid diglycol amine salt, boric acid isopropyl alcohol amine salt, boric acid methyl ethanol amine salt, boric acid methyldiethanolamine salt, trimethylborate, triethyl borate, triproylborate, butyl borate, the isoamyl glycol borate ester, duplex catechol borate, in boric acid pinacol ester and the boric acid imidazoline ester one or more.
13. photoresist cleansing composition as claimed in claim 12, it is characterized in that described boric acid, borate and borate are selected from one or more in boric acid, phenyl boric acid, 2-carboxyl phenyl boric acid, 2-methylol phenyl boric acid, tetramethyl ammonium borate, tetraethyl ammonium borate, boric acid ethanolamine salt, triethanolamine borate salt, boric acid diglycol amine salt and the duplex catechol borate.
14. photoresist cleansing composition as claimed in claim 1 is characterized in that, the total content of described boric acid, borate and borate is 0.01～10wt%.
15. photoresist cleansing composition as claimed in claim 14 is characterized in that, the total content of described boric acid, borate and borate is 0.1～5wt%.
16. photoresist cleansing composition as claimed in claim 1, it is characterized in that described photoresist cleansing composition further contains and is selected from polarity organic cosolvent, surfactant and other corrosion inhibiter except that boric acid, borate and borate one or more.
17. photoresist cleansing composition as claimed in claim 16 is characterized in that, described polarity organic cosolvent content is≤50wt%, but does not comprise 0wt%; Described surface-active contents is≤5wt%, but does not comprise 0wt%; Described other corrosion inhibiter content except that the corrosion inhibiter of boric acid, borate and borate is≤5.0wt%, but does not comprise 0wt%.
18. photoresist cleansing composition as claimed in claim 17 is characterized in that, the content of described polarity organic cosolvent is 5～30wt%; Described surface-active contents is 0.05～3.0wt%; Described other corrosion inhibiter content except that the corrosion inhibiter of boric acid, borate and borate is 0.05～3.0wt%.
19. photoresist cleansing composition as claimed in claim 16 is characterized in that, described polarity organic cosolvent is selected from one or more in sulfoxide, sulfone, imidazolidinone, hydramine and the alkylene glycol monoalkyl ether.
20. photoresist cleansing composition as claimed in claim 19 is characterized in that, described sulfoxide is the diethyl sulfoxide and/or the first and second basic sulfoxides; Described sulfone is selected from one or more in methyl sulfone, ethyl sulfone and the sulfolane; Described imidazolidinone is selected from 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone and 1, one or more in 3-diethyl-2-imidazolidinone; Described hydramine is selected from one or more in monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyldiethanolamine, dimethylethanolamine and the AEEA; Described alkylene glycol monoalkyl ether is selected from one or more in diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, the single ether of dipropylene glycol and the dipropylene glycol monobutyl ether.
21. photoresist cleansing composition as claimed in claim 16 is characterized in that described surfactant is selected from one or more in polyvinyl alcohol (PVA), polyvinylpyrrolidone and the polyoxyethylene ether.
22. photoresist cleansing composition as claimed in claim 16 is characterized in that, the number-average molecular weight of described surfactant is 500～20000.
23. photoresist cleansing composition as claimed in claim 22 is characterized in that, the number-average molecular weight of described surfactant is 1000～10000.
24. photoresist cleansing composition as claimed in claim 16 is characterized in that, described other corrosion inhibiter except that boric acid, borate and borate is selected from one or more in alcamines, azole, phosphonic acid based and the polyacrylic corrosion inhibiter.
25. photoresist cleansing composition as claimed in claim 24, it is characterized in that described alcamines corrosion inhibiter is selected from one or more in monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyldiethanolamine, dimethylethanolamine and the AEEA; Described azole corrosion inhibiter is selected from benzotriazole, methyl benzotriazazole, benzotriazole diethanolamine salt, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, dimercaptothiodiazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3-amino-5-sulfydryl-1,2,4-triazole, 3, the 5-diaminostilbene, 2,4-triazole, 4-amino-5-sulfydryl-1,2, one or more in 4-triazole, 5-amino-tetrazole and the 1-phenyl-5-mercapto tetrazole; Described phosphonic acid based corrosion inhibiter is selected from 1-hydroxy ethylene-1,1-di 2 ethylhexyl phosphonic acid, Amino Trimethylene Phosphonic Acid, 2-phosphonic acids butane-1,2, one or more in 4-tricarboxylic acids, ethylenediamine tetramethylene phosphonic acid and the diethylenetriamine pentamethylene phosphonic acids; Described polyacrylic corrosion inhibiter is selected from the methacrylate polymer of the acrylate copolymer of pure amine salt, polyoxyethylene modification of pure amine salt, the methacrylate polymer of acrylate copolymer and multipolymer, methacrylate polymer and multipolymer thereof, acrylate copolymer and ester and pure ammonium salt and polyoxyethylene modification and in ester and the pure ammonium salt one or more thereof.
26. photoresist cleansing composition as claimed in claim 24 is characterized in that, the number-average molecular weight of described polyacrylic corrosion inhibiter is 500～100000.
27. photoresist cleansing composition as claimed in claim 26 is characterized in that, the number-average molecular weight of described polyacrylic corrosion inhibiter is 1000～50000.
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Cited By (7)

* Cited by examiner, † Cited by third party
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CN105807577A (en) * 2014-12-29 2016-07-27 安集微电子科技(上海)有限公司 Cleaning solution for photoresist residues
CN107168021A (en) * 2017-07-07 2017-09-15 绵阳艾萨斯电子材料有限公司 A kind of photoresist stripper and its preparation method and application
CN111381458A (en) * 2018-12-27 2020-07-07 安集微电子科技（上海）股份有限公司 Photoresist cleaning solution
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