CN101750638A - Optical film and manufacturing method thereof - Google Patents

Optical film and manufacturing method thereof Download PDF

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Publication number
CN101750638A
CN101750638A CN200810187872A CN200810187872A CN101750638A CN 101750638 A CN101750638 A CN 101750638A CN 200810187872 A CN200810187872 A CN 200810187872A CN 200810187872 A CN200810187872 A CN 200810187872A CN 101750638 A CN101750638 A CN 101750638A
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China
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thin film
optical thin
conductive material
fluorine modification
masking liquid
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CN200810187872A
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翁畅健
林士斌
陈铭慧
陈庆松
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BenQ Materials Corp
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Daxon Technology Inc
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Abstract

The invention relates to a multifunctional optical film and a manufacturing method thereof. The optical film has the functions of low reflectivity, static electricity resistance and oil stain resistance. The manufacturing method of the optical film in the invention comprises the following steps: mixing alkoxy silane, fluorine-modified alkoxy silane, conducting material and hole forming agent to form masking liquid; and solidifying the masking liquid to form the optical film. The optical film has fluoric siloxane, conducting material doped in the siloxane, and three-dimensional tiny pores. Therefore, the optical film has the functions of oil stain resistance, static electricity resistance and reflection resistance.

Description

Optical thin film and preparation method thereof
Technical field
The present invention relates to a kind of optical thin film and preparation method thereof, it can provide the complex function of antireflection, oil rub resistance (anti-fouling) and antistatic (anti-static) simultaneously.
Background technology
In existing display device, be subjected to catoptrical interference for fear of image, can reduce reflectivity at each base material of existing display device or the reflection horizon of each film surface coating low reflection of one deck (lowreflection) usually.Yet the material of low reflection layer generally all comprises the resin of insulativity, thus produce surface electrostatic in surperficial stored charge especially easily, and then cause pollution problems such as dust absorption.In order to reduce the pollution problem that static causes, it generally is the antistatic agent that in the resin of insulation, is added into conduction, for example ion-type interfacial agent or conducting polymer, or metal oxide microparticle, for example zinc paste (ZnO), tin oxide (SnO), antimony tin (ATO) or tin indium oxide (ITO) wait the electrical conductivity that improves resin and reach anlistatig effect.Yet, because aforementioned antistatic agent and metal oxide all belong to the high material of refractive index, therefore can cause the refractive index of antistatic resin layer too high, reduce the effect in reflection horizon on the contrary.
In order to take into account antiradar reflectivity and antistatic effect, a kind of composite film structure is arisen at the historic moment, and for example discloses the composite film structure that a kind of anti-reflective film and antistatic film are formed by stacking among the U.S. Patent Publication No. US2006/0029818A of the company of Dai Nippon Printing of Japan application.As shown in Figure 1, composite film structure 10 is at the optical thin film that is coated with respectively on the transparent base 12 more than two-layer or two-layer, for example in order to anlistatig conductive film 14, hard conating 16 and low-reflection film 18.Conductive film 14 can provide anlistatig effect; but can improve reflectivity and reduce antireflecting effect; and the wearing quality of rete (scratch resistance) is also not enough, therefore hard conating 16 need be set in addition provide protection and antireflecting effect with low-reflection film 18.
Though the application of U.S. Patent Publication No. US 2006/0029818A can take into account antiradar reflectivity and antistatic effect, but the manufacturing process of composite film structure need repeatedly be coated with, dry or process such as applying, significantly increase process complexity, not only increase the time of manufacturing process, also cause the yield of technology to descend easily.Therefore, how to develop a kind of optical thin film of simplifying process complexity and better performance being provided, still an important topic of doing one's utmost to improve for industry.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of optical thin film and preparation method thereof, so that antireflection, oil rub resistance and anlistatig complex function to be provided simultaneously.
In order to achieve the above object, the invention provides a kind of optical thin film, it includes the silicon oxide compound (fluoride-modified silicon oxide compound) of fluorine modification, a plurality of hollow bore and conductive material.Inside and surface that hollow bore is distributed in the silicon oxide compound of fluorine modification make the silicon oxide compound of fluorine modification become the poriness optical thin film, and make the poriness optical thin film have unsmooth surface, and conductive material disperse to be doped in the poriness optical thin film.
In optical thin film of the present invention, in one embodiment, the silicon oxide compound of this fluorine modification comprises the silicon dioxide of fluorine modification.
In optical thin film of the present invention, in one embodiment, the silicon oxide compound of this fluorine modification comprises trifluoromethyl (CF 3).
In optical thin film of the present invention, in one embodiment, hollow bore is the hole of nano-scale.
In optical thin film of the present invention, in one embodiment, this conductive material comprises conducting polymer.
In optical thin film of the present invention, in one embodiment, this conductive material comprise polyaniline (Polyaniline, PAn), polythiophene (polythiophene, PTh) or its composition.
In optical thin film of the present invention, in one embodiment, this conductive material comprises the metal material of nano-scale.
In optical thin film of the present invention, in one embodiment, this conductive material comprises nano Au particle, nano silver particles, CNT (carbon nanotube) or its composition.
In addition, the present invention also provides a kind of method for making of optical thin film.At first, mix alkoxy silane (fluoride-modified alkoxy silane), conductive material and the hole binder of first solvent, alkoxy silane (alkoxy silane), fluorine modification, to form masking liquid.Then, solidify masking liquid and form rete.Afterwards, the hole binder is dissolved from rete and go out, to form the poriness optical thin film.The inside of poriness optical thin film and surface have a plurality of hollow bore.
In method for making of the present invention, the step of solidifying this masking liquid comprises the surface of this masking liquid being coated base material; And toast this masking liquid and become this rete.
In method for making of the present invention, in one embodiment, this base material comprises glass baseplate, thermoplastic matrix or thermosetting plastics base material.
In method for making of the present invention, in one embodiment, this base material comprises polyethylene terephthalate (polyethylene terephthalate, PET), Triafol T (triacetyl cellulose, TAC), cyclic olefin polymer (cycloolefin polymer, COP), polymethylmethacrylate (polymethyl methacrylate, PMMA), polycarbonate (polycarbonate, PC) or its composition.
In method for making of the present invention, in one embodiment, this alkoxy silane comprise tetramethoxy-silicane (tetramethyl orthosilicate, TMOS), tetraethoxysilane (tetraethyl orthosilicate, TEOS) or its composition.
In method for making of the present invention, in one embodiment, this blend step comprises alkoxy silane, this conductive material that pH-value is adjusted agent, this first solvent, this alkoxy silane, this fluorine modification and mixes with this hole binder.
In method for making of the present invention, in one embodiment, this hole binder comprise glucose, urea, sucrose, polyvinyl alcohol (PVA) (polyvinyl alcohol, PVA), polyglycol (polyethylenglycol, PEG) or its composition.
In method for making of the present invention, in one embodiment, the alkoxy silane of this fluorine modification comprises 13 fluoro-1,1,2,2-tetrahydrochysene octyl-trimethoxy silane (tridecafluoro-1,1,2,2 ,-tetrahydrooctyl-trimethoxysilane, TDF-TMOS).
In method for making of the present invention, in one embodiment, this conductive material comprises the metal material of conducting polymer or nano-scale.
In method for making of the present invention, in one embodiment, this conductive material comprises polyaniline, polythiophene, nano Au particle, nano silver particles, CNT or its composition.
Optical thin film provided by the invention can have fluorine-containing element silicon oxide compound, be doped in wherein conductive material and three-dimensional small hole, therefore can possess simultaneously oil rub resistance is arranged, antistatic and antireflecting complex function.
Description of drawings
Fig. 1 is the diagrammatic cross-section of conventional composite film layer structure.
Fig. 2 makes the schematic flow sheet of optical thin film for a preferred embodiment of the present invention.
Fig. 3 utilizes the cross-sectional view of the optical thin film of preceding method made for the present invention.
Fig. 4 is the reaction process synoptic diagram of embodiment 1.
Fig. 5 is the reflection collection of illustrative plates synoptic diagram of embodiment 1 formed optical thin film.
Fig. 6 is the test data table of the optical thin film of embodiments of the invention and comparative example.
Embodiment
Please refer to Fig. 2, Fig. 2 is the schematic flow sheet of the making optical thin film of a preferred embodiment of the present invention.Shown in the step 50 of Fig. 2, at first, mix alkoxy silane, conductive material and the hole binder of first solvent, alkoxy silane, fluorine modification, utilize sol-gal process to form masking liquid.
Aforementioned alkoxy silane is gone up the silicon oxide compound precursor that can comprise any kind of substantially, tetramethoxy-silicane (tetramethyl orthosilicate for example, TMOS), tetraethoxysilane (tetraethyl orthosilicate, be called for short TEOS, be also referred to as tetraethoxysilane, tetraethyl silica alkane, tetraethyl oxosilane, tetraethyl orthosilicate or silester) or its composition.The alkoxy silane of aforementioned fluorine modification is gone up substantially and can be comprised any alkoxy silane that contains the fluorine element, for example 13 fluoro-1,1,2,2-tetrahydrochysene octyl-trimethoxy silane (tridecafluoro-1,1,2,2 ,-tetrahydrooctyl-trimethoxysilane, TDF-TMOS).
Conductive material can comprise the metal material of nano-scale, metal oxide microparticle, ion-type interfacial agent or the conducting polymer of nano-scale, polyaniline (Polyaniline for example, PAn), polythiophene (polythiophene, PTh), contain the solution of nano Au particle, the solution that contains nano silver particles, the solution that contains CNT (carbon nanotube), zinc paste, tin oxide, antimony tin, tin indium oxide or its composition.In other embodiments, conductive material also can comprise the conducting high polymers thing, for example by PPOX (polypropylene oxide, PPO) and polyoxyethylene (polyethylene oxide, PEO) two kinds of copolymerization macromolecules that high molecular polymer was polymerized jointly with crosslinked bulk, the high molecular polymer of forming by same monomer, for example PPOX or polyoxyethylene, but be not limited thereto.
Aforementioned hole binder can comprise the small molecule material of any selective dissolution.So-called selective dissolution represents that the hole binder can utilize second dissolution with solvents and goes out, and described second solvent is selected than much larger than 1 for the dissolving of the hole binder and the main material of optical thin film.For example the hole binder preferably can comprise glucose, urea, sucrose, polyvinyl alcohol (PVA) (polyvinyl alcohol, PVA), polyglycol (polyethylenglycol, PEG) or its composition.Wherein, in the aforementioned masking liquid also further the acid mixture base number adjust agent or other required additives, hydrochloric acid for example, assisting to carry out sol-gal process produces hydrolysis reaction or other effects or function is provided, but be not limited thereto, pH-value is adjusted agent can be any material of adjusting pH-value, and there is no particular restriction for its kind or molecular weight.
Shown in the step 52 of Fig. 2, then, to solidify masking liquid and form rete, the step of wherein solidifying masking liquid can comprise: earlier masking liquid is evenly coated the surface of base material, toasted masking liquid again and become rete.Rete after the baking is preferably transparent membrane, be mainly the silicon oxide compound (silicide oxidecompound) of the cross-linked network of fluorine modification (fluoride-modified), for example rete comprises fluorine-containing silicon dioxide, and comprises hole binder and the conductive material that mixes in wherein.According to a specific embodiment, the silicon oxide compound of fluorine modification of the present invention mainly comprises the silicon dioxide of cross-linked network, and silicon dioxide can with trifluoromethyl (CF 3) between produce the bond effect.The mode of masking liquid being coated substrate surface can comprise rubbing methods such as air doctor blade rubbing method, scraper rubbing method, spraying rubbing method, dip coated method, method of spin coating, wire mark method or coil type coating.
Aforementioned substrates is not limited to any material, can be the colored filter substrate or the plurality of groups of substrates of thin-film transistor of display panels, LCD, cathode-ray tube, any rete of plasma display or light emitting diode indicator, or optical module glass, described base material is preferably transparency carrier, but be not limited thereto, it can be glass baseplate, thermoplastic matrix or thermosetting plastics base material, for example the material of base material can comprise polyethylene terephthalate (polyethylene terephthalate, PET), Triafol T (triacetylcellulose, TAC), cyclic olefin polymer (cycloolefin polymer, COP), polymethylmethacrylate (polymethyl methacrylate, PMMA), polycarbonate (polycarbonate, PC) or its composition.
Shown in the step 54 of Fig. 2, afterwards, utilize second solvent that the hole binder is dissolved from rete and go out, to form the poriness optical thin film.The inside of poriness optical thin film and surface all have a plurality of hollow bore.Selecting for use of second solvent is to make second solvent select ratio much larger than 1 for the dissolving of the main material (silicon dioxide) of hole binder and optical thin film, to make things convenient for the dissolving of hole binder, can be aqueous solvent, organic solvent or its composition, for example be 1 to 1 mixed solution for ethanol and water ratio.The diameter of formed each hollow bore of the present invention is basically approximately between 1 nanometer to 50 nanometer, to reach oil rub resistance and anti-reflection function, preferred diameter approximately between 1 nanometer to 20 nanometer, can provide oil rub resistance and anti-reflection function preferably, yet be not limited thereto basically.The hollow bore that is positioned at poriness optical thin film surface makes the poriness optical thin film have rough rough surface, and the shape, quantity and the density that are positioned at the hollow bore of poriness optical thin film inside all are not subjected to the restriction of accompanying drawing, can be elongated tubular, circle, ellipse or erose hole, and the hole of part may be connected with each other.
Please refer to Fig. 3, Fig. 3 utilizes the cross-sectional view of the optical thin film of preceding method made for the present invention.As shown in Figure 3, optical thin film 110 is arranged at base material 112 surfaces, includes the silicon oxide compound 114 of fluorine modification, a plurality of hollow bore 116 and conductive material 118.Hollow bore 116 is distributed in the inside and surface of the silicon oxide compound 114 of fluorine modification, make the silicon oxide compound 114 of fluorine modification become the poriness optical thin film, and make the poriness optical thin film have rough rough surface 120, and conductive material 118 disperse to be doped in the poriness optical thin film.
Conductive material 118 tangles in the cross-linked network skeleton of poriness optical thin film, is difficult for breaking away from and anlistatig characteristic can being provided.The cross-linked network that the silicon oxide compound 114 of fluorine modification is constituted, material itself promptly has characteristics such as low-refraction and low cohesion.When the hole binder is dissolved come out after, can form three-dimensional nano-scale hollow bore 116 at optical thin film 110 internal layers, each hollow bore 116 forms concavo-convex fine structure on optical thin film 110 surface, and wherein the surface detail microstructure that causes of air in the hollow bore 116 and hollow bore 116 can further reduce the reflectivity of optical thin film 110 again.In addition, because the silicon oxide compound 114 of fluorine modification itself has lower cohesion, add hollow bore 116 and cause optical thin film 110 itself to have the trickle nanostructured of similar fine hair, make optical thin film 110 produce lotus-effect and further increase the ability of its oil rub resistance.
Application of optical film scope of the present invention does not have particular restriction, can be applicable to the colored filter substrate of display panels or any rete of plurality of groups of substrates of thin-film transistor, LCD, cathode-ray tube, plasma display or light emitting diode indicator, or optical module glass.
Below,, so that being described, optical thin film of the present invention and its method for making and compare especially exemplified by a plurality of specific embodiments with comparative example.
Embodiment 1
Please refer to Fig. 4, Fig. 4 is the reaction process synoptic diagram of embodiment 1.At first get about 20.8 grams of tetraethoxysilane (TEOS), 13 fluoro-1,1,2, the hydrochloric acid solution (HCl of about 7 grams of 2-tetrahydrochysene octyl-trimethoxy silane, about 20 grams of reaction dissolvent isopropyl alcohol (IPA) and 0.1N (aq)) about 7 grams place reaction bulb, at room temperature stir 30 minutes up to complete homogeneous phase with stirrer, then stop to stir, and with the clear solution of homogeneous phase sustained response 2 hours under 70 ℃ temperature of reaction, again mixed solution are reduced to room temperature.
Then, pour in the above-mentioned sticky mixed solution D-glucose (D-glucose) aqueous solution (concentration is about 0.8 mole every liter) of pre-configured about 3 grams into high degree of agitation till the homogeneous phase, the polyaniline aqueous solution (the about 10wt% of solid content) of getting about 7 grams are in addition poured into and are stirred to evenly in the above-mentioned viscous solution, utilize IPA to dilute aforementioned mixed solution again and form masking liquid.
Masking liquid coated transparent base such as PET or TAC go up and 80 ℃ down bakings 5 hour or more and form film thereafter.At last film is dipped in the mixed liquor of ethanol and water (ratio 1: 1) several seconds with dissolving glucose, can obtains transparent optical thin film after the oven dry.
Subsequently, can carry out optic test at embodiment 1 formed optical thin film, Fig. 5 is the reflection collection of illustrative plates synoptic diagram of embodiment 1 formed optical thin film.As shown in Figure 5, the optical thin film of embodiment 1 has good anti-reflection effect in visible wavelength range, especially can keep lower reflectivity (below 2%) at wavelength coverage between 400 nanometers (nm) to the light wave of 500 nanometers.
Embodiment 2
The reaction process of embodiment 2 is similar to the reaction process of embodiment 1, but embodiment 2 is with 13 fluoro-1 that add, 1,2,2-tetrahydrochysene octyl-trimethoxy silane increment is about 10 grams, and with the polyaniline aqueous solution decrement of adding is about 5 grams, and makes transparent optical thin film through after the flow process shown in Figure 4.
Comparative example 1
Comparative example 1 is that with the main difference of embodiment 2 comparative example 1 does not comprise the step of adding glucose, the step of adding the polyaniline aqueous solution, with the step of dissolving glucose.Preparation process is as follows:
At first get about 20.8 grams of TEOS, 13 fluoro-1,1,2, about 10 grams of 2-tetrahydrochysene octyl-trimethoxy silane, about 20 grams of IPA place reaction bulb with about 7 grams of the hydrochloric acid solution of 0.1N, at room temperature stir 30 minutes up to complete homogeneous phase with stirrer, then stop to stir,, again mixed solution is reduced to room temperature the clear solution of homogeneous phase sustained response 2 hours under 70 ℃ temperature of reaction.Then, utilize IPA to dilute aforementioned mixed solution, again solution coat was toasted 5 hours down on transparent base such as PET or TAC and at 80 ℃, can obtain transparent optical thin film after the oven dry.
Comparative example 2
Comparative example 2 is with the main difference of embodiment 2, and comparative example 2 does not comprise the step of adding the polyaniline aqueous solution and adds step with the IPA that adds after the polyaniline aqueous solution, and is 3 grams with the glucose decrement of adding.Preparation process is as follows:
Get about 20.8 grams of TEOS, 13 fluoro-1,1,2, about 10 grams of 2-tetrahydrochysene octyl-trimethoxy silane, about 20 grams of IPA place reaction bulb with about 7 grams of the hydrochloric acid solution of 0.1N, at room temperature stir 30 minutes till complete homogeneous phase, then the clear solution of homogeneous phase is reduced to room temperature in sustained response under 70 ℃ the temperature of reaction after 2 hours.Afterwards, the D-glucose aqueous solution (concentration is about 0.8 mole every liter) of about 3 grams are poured in the above-mentioned sticky mixed solution into high degree of agitation till the homogeneous phase.Thereafter, with solution coat on the transparent base and 80 ℃ of down bakings more than 5 hours and form film.At last film is dipped in the mixed liquor of ethanol and water (ratio 1: 1) several seconds with dissolving glucose, can obtains transparent optical thin film after the oven dry.
Comparative example 3
Comparative example 3 is that with the main difference of embodiment 1 comparative example 3 does not comprise step of adding glucose and the step of dissolving glucose.Preparation process is as follows:
Get about 20.8 grams of TEOS, 13 fluoro-1,1,2, about 7 grams of 2-tetrahydrochysene octyl-trimethoxy silane, about 20 grams of IPA place reaction bulb with about 7 grams of the hydrochloric acid solution of 0.1N, at room temperature stir 30 minutes till complete homogeneous phase, then the clear solution of homogeneous phase is reduced to room temperature in sustained response under 70 ℃ the temperature of reaction after 2 hours with stirrer.Then, the polyaniline aqueous solution (the about 10wt% of solid content) of getting about 7 grams are poured into and are stirred to evenly in the above-mentioned viscous solution, utilize IPA to dilute aforementioned mixed solution again., solution coat in transparent base such as PET or TAC on and at 80 ℃ down toasted 5 hour or more, can obtain transparent optical thin film thereafter.
For the effect of optical thin film of the present invention more clearly is described, Fig. 6 detects the optical thin film of embodiments of the invention and comparative example by multinomial test, wherein because comparative example 1 does not add anlistatig conductive material with comparative example 2, do not have an antistatic effect, therefore do not have the test result of surface impedance value.As shown in Figure 6, compare with embodiment 2 with embodiments of the invention 1, do not add lower slightly, the reflectivity obviously higher (anti-reflection effect is relatively poor) of optical thin film penetration of the comparative example 1 of glucose and polyaniline, and water contact angle obviously less (the oil rub resistance effect is relatively poor); Glucose decrement and the optical thin film penetration of comparative example 2 and the water contact angle size of not adding polyaniline hardly differ with embodiment 1,2, and can obtain lower reflectivity, but but do not have anlistatig effect, may cause the problem of micronic dust absorption; Has anlistatig effect though added the optical thin film that polyaniline but do not add the comparative example 3 of glucose, but penetration obviously lower (optical effect is relatively poor), reflectivity obviously higher (anti-reflection effect is relatively poor), and water contact angle obviously less (the oil rub resistance effect is relatively poor).
In sum, optical thin film provided by the invention can have fluorine-containing element silicon oxide compound, be doped in wherein conductive material and three-dimensional small hole, the collocation of these three features makes single optical thin film of the present invention to possess simultaneously good oil rub resistance, antistatic and antireflecting complex function.Therefore, but optical thin film of the present invention not only simplified manufacturing technique complexity, keep the good optical effect, and can provide more complete complex function.
The above only is the preferred embodiments of the present invention, and all equivalent variations and modifications of doing according to claim of the present invention all should belong to covering scope of the present invention.
The primary clustering symbol description
10 composite film structures, 12 transparent bases
14 conductive films, 16 hard conatings
18 low-reflection films, 50 steps
52 step 54 steps
110 optical thin films, 112 base materials
Silicon oxide compound 116 hollow bore of 114 fluorine modifications
118 conductive materials, 120 rough surfaces.

Claims (10)

1. optical thin film comprises:
The silicon oxide compound of fluorine modification;
A plurality of hollow bore, be distributed in described fluorine modification silicon oxide compound inside with the surface, make the silicon oxide compound of described fluorine modification become the poriness optical thin film, and make described poriness optical thin film have unsmooth surface; And
Conductive material disperses to be doped in the described poriness optical thin film.
2. optical thin film according to claim 1, wherein, the silicon oxide compound of described fluorine modification comprises the silicon dioxide of fluorine modification.
3. optical thin film according to claim 1, wherein, the silicon oxide compound of described fluorine modification comprises trifluoromethyl.
4. optical thin film according to claim 1, wherein, described hollow bore is the hole of nano-scale.
5. optical thin film according to claim 1, wherein, described conductive material comprises conducting polymer.
6. optical thin film according to claim 5, wherein, described conductive material comprises polyaniline, polythiophene or its composition.
7. optical thin film according to claim 1, wherein, described conductive material comprises the metal material of nano-scale.
8. optical thin film according to claim 1, wherein, described conductive material comprises nano Au particle, nano silver particles, CNT or its composition.
9. the method for making of an optical thin film comprises:
The alkoxy silane, conductive material and the hole binder that mix first solvent, alkoxy silane, fluorine modification are to form masking liquid;
Solidify described masking liquid and form rete; And
The described hole binder is dissolved from described rete and go out, to form the poriness optical thin film, the inside of described poriness optical thin film and surface have a plurality of hollow bore.
10. method for making according to claim 9, wherein, the step of solidifying described masking liquid comprises:
Described masking liquid is coated the surface of base material; And
Toast described masking liquid and become described rete.
CN200810187872A 2008-12-22 2008-12-22 Optical film and manufacturing method thereof Pending CN101750638A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102432899A (en) * 2011-08-16 2012-05-02 深圳市华星光电技术有限公司 Modified polyvinylalcohol (PVA) base film, preparation method thereof and polarizer
US9290674B2 (en) 2011-08-16 2016-03-22 Shenzhen China Star Optoelectronics Technology Co. Ltd Method for preparing a base film of modified polyvinyl alcohol polymer
CN110945388A (en) * 2017-07-26 2020-03-31 太平洋灯光全息图公司 Anti-glare anodized aluminum surfaces
TWI791711B (en) * 2017-12-15 2023-02-11 日商日產化學股份有限公司 Composition for hole trapping layer of organic photoelectric conversion element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102432899A (en) * 2011-08-16 2012-05-02 深圳市华星光电技术有限公司 Modified polyvinylalcohol (PVA) base film, preparation method thereof and polarizer
US9290674B2 (en) 2011-08-16 2016-03-22 Shenzhen China Star Optoelectronics Technology Co. Ltd Method for preparing a base film of modified polyvinyl alcohol polymer
CN110945388A (en) * 2017-07-26 2020-03-31 太平洋灯光全息图公司 Anti-glare anodized aluminum surfaces
TWI791711B (en) * 2017-12-15 2023-02-11 日商日產化學股份有限公司 Composition for hole trapping layer of organic photoelectric conversion element

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Open date: 20100623