CN101746761B - Method for welding silicon cores - Google Patents
Method for welding silicon cores Download PDFInfo
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- CN101746761B CN101746761B CN 200910066298 CN200910066298A CN101746761B CN 101746761 B CN101746761 B CN 101746761B CN 200910066298 CN200910066298 CN 200910066298 CN 200910066298 A CN200910066298 A CN 200910066298A CN 101746761 B CN101746761 B CN 101746761B
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Abstract
The invention relates to a method for welding silicon cores, which comprises the following steps: finishing welding faces, placing silicon cores, starting a silicon core furnace and a high frequency induction heating coil, thermally melting the silicon cores, keeping temperature and reducing the temperature; and recycling or laying aside for later use the integrally welded silicon cores. In the method for welding the silicon core, through the welding of the silicon cores having basically the same diameter and components, waste is recycled and part of crushing, zone-melting and silicon drawing cost is saved. The method is also applicable to the production of polysilicon. The silicon cores are softened at 800 DEG C to achieve ductility and then made into required lengths and shapes by the welding method of the invention, and a seamless loop is formed by a silicon core.
Description
[technical field]
The present invention relates to a kind of method for welding silicon cores, especially relate to a kind of silicon core high-frequency induction heating welding process.
[background technology]
At present, known what generally adopt in Siemens Method is produced the process of polysilicon is silicon core overlapping technology, and it is mainly used in a link of production of polysilicon, just in the reduction reaction process.The principle of work of described reduction reaction process is that polysilicon is placed in the airtight reduction furnace, before shove charge, reduction furnace in silicon core be overlapped to form several loop line earlier in conjunction with Fig. 1 or Fig. 2, also cry " bridging ", each loop line all is made up of two perpendicular silicon cores (3) and a horizontal silicon core (2); Two perpendicular silicon cores (3) of each loop line are connected on respectively on two electrodes on the furnace bottom, electrode is connected power supply respectively, conduction heating " one group of silicon core that overlaps is equivalent to a big resistance " is carried out in the loop that is formed by described two perpendicular silicon cores (3) and a horizontal silicon core (2), in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction, like this, required polysilicon will generate at the silicon wicking surface; Foregoing is silicon core and the application of overlapping technology in production of polysilicon thereof.
Silicon core overlapping mode is seen Fig. 1, Fig. 2, and overlapping mode commonly used also has part to use " U " shape mouth to overlap for the joint area in two perpendicular silicon cores (3) upper end is provided with " V " shape mouth (4) overlap joint respectively.Yet, no matter adopt which kind of overlapping technology all can have following two kinds of defectives: the first, lap-joint's contact surface is too little, and it is bigger to cause lap-joint to contact bad resistance, and the polysilicon that obtains herein during reduction reaction is second-rate, and jargon is " material turns round "; The second, can locate by " U " shape or " V " shape mouth (4) " or groove " at fore-and-aft direction, but can't locate at left and right directions; Like this, in reduction process, cause the lodging of silicon core easily.
So be necessary to research and develop the formed loop line of a kind of seamless silicon core.
Existing silicon core is a lot of owing to do not reach desired length after use, must smash, distinguish molten, being drawn into the silicon core can be in inferior utilization; It is known because the silicon core is a melt temperature reaching about 1410 degree, and the silicon core just is ductile or the remollescent characteristic at 800 degree, how to utilize above-mentioned characteristic to become the later use of silicon core or the R﹠D direction that technology is extended on the basis of existing technology, and can accomplish just through welding that for the silicon core that does not reach desired length relevant report is not found in retrieval as yet through technology.
[summary of the invention]
In order to overcome the deficiency in the background technology, the invention discloses a kind of method for welding silicon cores, method for welding silicon cores of the present invention has been realized utilization of waste material and has saved partly smashing, distinguish cost molten, drawing silicon core by diameter, the essentially identical silicon core of composition are carried out welding; The present invention is equally applicable to the production of polysilicon, the silicon core is softened at 800 degree described silicon core is ductile, and makes the silicon core reach desired length and shape by welding process of the present invention then, and forms seamless loop by a silicon core.
In order to realize the purpose of foregoing invention, the present invention adopts following technical scheme:
A kind of method for welding silicon cores; Comprise following steps:
1), finishing face of weld
The binding surface of welding silicon core is trimmed to the plane or slightly the face of projection is stand-by;
2), the silicon core is placed
The binding surface of welding silicon core is placed on the middle part hot melt mouth upper and lower of high-frequency induction heating coil in the silicon core stove respectively;
3), the unlatching of silicon core stove, high-frequency induction heating coil
Do under the environment silicon core furnaceman, cooling water pipeline inserted the water source when high-frequency induction heating coil was inserted high-tension current;
4), hot melt
Elder generation delivers to bottom or top silicon core on the hot melt mouth bottom, middle part or the top of high-frequency induction heating coil, slowly insert the middle part hot melt mouth of high-frequency induction heating coil then, but must not contact with the high-frequency induction heating coil, again that another is corresponding silicon core slowly inserts the middle part hot melt mouth of high-frequency induction heating coil; Two silicon cores leave the gap each other, and the silicon core raises until reaching molten state in position, the melting zone temperature of high-frequency induction heating coil middle part hot melt interruption-forming, realize the welding to two silicon cores then downwards by moving upward, down on the control silicon core;
5), keep
Above-mentioned steps continues to make the silicon core molten in the melting zone district by control high-frequency induction heating coil, and two silicon cores are put complete welding and formed one by welding;
6), cooling
Continuation reduces electric current by control high-frequency induction heating coil after the above-mentioned steps, and progressively temperature is reduced until reaching the normal temperature state, then by the silicon core after the extraction welding in the middle part hot melt mouth of high-frequency induction heating coil;
7), welding and the silicon core that forms one are utilized again or standby.
Because adopt technique scheme, the present invention has following superiority:
Method for welding silicon cores of the present invention carries out welding with the silicon core that does not reach required sufficient length, and makes described silicon core become an integral body; Overcome in silicon core preparation process, because the silicon core that equipment or artificial origin cause the silicon core length that draws out not reach the reduction furnace service requirements obtains utilizing, thereby saved energy consumption in the processing, and the silicon core after the welding, can satisfy the service requirements of reduction furnace, the generation of the phenomenon that will cut the waste greatly.
[description of drawings]
Fig. 1 is existing silicon core bridging arrangement synoptic diagram.
Fig. 2 is that the A of Fig. 1 is to diagrammatic sketch.
Fig. 3 is the seamless silicon core loop structure synoptic diagram that utilizes the present invention to obtain.
Fig. 4 is hot melt equipment of the present invention and mode synoptic diagram.
Fig. 5 is that the B of Fig. 4 is to diagrammatic sketch.
In the drawings: 1, joint; 2, horizontal silicon core; 3, perpendicular silicon core; 4, " V " shape mouth; 5, circular arc silicon core; 6, welding point; 7, high-frequency induction heating coil; 8, cooling water pipeline.
[embodiment]
With reference to the following examples, can explain the present invention in more detail; But the present invention is not limited to these embodiment.
3～5 described method for welding silicon cores in conjunction with the accompanying drawings; Comprise following steps:
1), finishing face of weld
The binding surface of welding silicon core is trimmed to the plane or slightly the face of projection is stand-by;
2), the silicon core is placed
The binding surface of welding silicon core is placed on the middle part hot melt mouth upper and lower of high-frequency induction heating coil 7 in the silicon core stove respectively;
3), the unlatching of silicon core stove, high-frequency induction heating coil
Do under the environment silicon core furnaceman, cooling water pipeline 8 inserted the water source when high-frequency induction heating coil 7 was inserted high-tension current;
4), hot melt
Elder generation delivers to bottom or top silicon core on the hot melt mouth bottom, middle part or the top of high-frequency induction heating coil 7, slowly insert the middle part hot melt mouth of high-frequency induction heating coil 3 then, but must not contact with high-frequency induction heating coil 7, again that another is corresponding silicon core slowly inserts the middle part hot melt mouth of high-frequency induction heating coil 7; Two silicon cores leave the gap each other, and the silicon core raises until reaching molten state in the position, melting zone of high-frequency induction heating coil 7 middle part hot melt interruption-formings temperature, realize the welding to two silicon cores then downwards by moving upward, down on the control silicon core;
5), keep
Above-mentioned steps continues to make the silicon core molten in the melting zone district by control high-frequency induction heating coil 7, and two silicon cores are by the 6 complete weldings of welding point and form one;
6), cooling
Continuation reduces electric currents by control high-frequency induction heating coil 7 after the above-mentioned steps, and progressively temperature is reduced until reaching the normal temperature state, then by the silicon core after the extraction welding in the middle part hot melt mouth of high-frequency induction heating coil 7;
7), welding and the silicon core that forms one are utilized again or standby.
Method for welding silicon cores of the present invention, especially can utilize silicon core overlap joint replacement in background technology, the silicon core is ductile or softening silicon core is made circular arc silicon core 5 shapes after through 800 degree, substitutes described overlap joint, reach a formed loop line of seamless silicon core; The present invention also can become the welding silicon cores that does not reach length.
The embodiment that selects for use in this article in order to disclose purpose of the present invention currently thinks to suit, but will be appreciated that, the present invention is intended to comprise that all belong to all changes and the improvement of the interior embodiment of this design and the scope of the invention.
Claims (1)
1. method for welding silicon cores; It is characterized in that: described welding process comprises following steps:
1), finishing face of weld
The binding surface of welding silicon core is trimmed to the plane or slightly the face of projection is stand-by;
2), the silicon core is placed
The binding surface of welding silicon core is placed on the middle part hot melt mouth upper and lower of high-frequency induction heating coil (7) in the silicon core stove respectively;
3), the unlatching of silicon core stove, high-frequency induction heating coil
Do under the environment silicon core furnaceman, cooling water pipeline (8) inserted the water source when high-frequency induction heating coil (7) was inserted high-tension current;
4), hot melt
Elder generation delivers to bottom or top silicon core on the hot melt mouth bottom, middle part or the top of high-frequency induction heating coil (7), slowly insert the middle part hot melt mouth of high-frequency induction heating coil (7) then, but must not contact with high-frequency induction heating coil (7), again that another is corresponding silicon core slowly inserts the middle part hot melt mouth of high-frequency induction heating coil (7); Two silicon cores leave the gap each other, and the silicon core raises until reaching molten state in position, the melting zone temperature of high-frequency induction heating coil (7) middle part hot melt interruption-forming, realize the welding to two silicon cores then downwards by moving upward, down on the control silicon core;
5), keep
Above-mentioned steps continues to make the silicon core molten in the melting zone district by control high-frequency induction heating coil (7), and two silicon cores are by welding point (6) welding and form one fully;
6), cooling
Continuation reduces electric current by control high-frequency induction heating coil (7) after the above-mentioned steps, and progressively temperature is reduced until reaching the normal temperature state, then by the silicon core after the extraction welding in the middle part hot melt mouth of high-frequency induction heating coil (7);
7), welding and the silicon core that forms one are utilized again or standby.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910066298 CN101746761B (en) | 2009-10-19 | 2009-10-19 | Method for welding silicon cores |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910066298 CN101746761B (en) | 2009-10-19 | 2009-10-19 | Method for welding silicon cores |
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| CN101746761A CN101746761A (en) | 2010-06-23 |
| CN101746761B true CN101746761B (en) | 2011-08-24 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013225146A1 (en) | 2013-12-06 | 2014-04-24 | Wacker Chemie Ag | Producing a silicon single thin rod comprises welding of two thin rods of polycrystalline silicon to a longer thin rod by induction welding an induction coil |
| CN105329900B (en) * | 2015-12-10 | 2017-11-03 | 黄河水电光伏产业技术有限公司 | A kind of silicon core connection method |
| CN109837584A (en) * | 2019-03-29 | 2019-06-04 | 山西潞安太阳能科技有限责任公司 | A kind of fusion joining process of progress in Czochralski silicon core raw material stick |
| CN110791806A (en) * | 2019-12-04 | 2020-02-14 | 亚洲硅业(青海)股份有限公司 | Method and device for connecting silicon cores |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865528A (en) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Large-diameter zone-melting silicon single crystal growth method |
| CN2918456Y (en) * | 2006-04-14 | 2007-07-04 | 洛阳金诺机械工程有限公司 | High-frequency coil capable of preparing multiple silicon core and other crystal materials at one time |
| US20080286550A1 (en) * | 2007-05-16 | 2008-11-20 | Wacker Chemie Ag | Polycrystalline Silicon Rod For Zone Reflecting And A Process For The Production Thereof |
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- 2009-10-19 CN CN 200910066298 patent/CN101746761B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2918456Y (en) * | 2006-04-14 | 2007-07-04 | 洛阳金诺机械工程有限公司 | High-frequency coil capable of preparing multiple silicon core and other crystal materials at one time |
| CN1865528A (en) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Large-diameter zone-melting silicon single crystal growth method |
| US20080286550A1 (en) * | 2007-05-16 | 2008-11-20 | Wacker Chemie Ag | Polycrystalline Silicon Rod For Zone Reflecting And A Process For The Production Thereof |
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| CN101746761A (en) | 2010-06-23 |
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