CN101741307A - Dynamic simulation device and method thereof of super and extra high voltage controllable magnetic control shunt reactor - Google Patents
Dynamic simulation device and method thereof of super and extra high voltage controllable magnetic control shunt reactor Download PDFInfo
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Abstract
The invention provides dynamic simulation device and method thereof of a super and extra high voltage controllable magnetic control shunt reactor, wherein the dynamic simulation device is capable of accurately simulating magnetic control shunt reactors with different capacities in 500kV, 750kV and 1,000kV power transmission systems. A simulation body consists of three single-phase magnetic control reactors; each single-phase magnetic control reactor is in a three-column structure; two beside core columns are working iron cores; a main alternating current winding and a direct current control coil are wound on each working iron core; and main alternating current windings on the two iron core columns are connected in parallel and connected to a power grid. Control windings are separated from the main windings so as to ensure the safety and the reliability of the device during work. The main windings are provided with twelve turn-to-turn short circuit taps which can respectively simulate 1-25 percent of turn-to-turn short circuit faults from the high-voltage side and the neutral point side; and the control windings are provided with seven turn-to-turn short circuit taps which can simulate 1-25 percent of turn-to-turn short circuit faults from the neutral point side. The body of the device is provided with a current transformer and a voltage transformer on a primary side, which are used for meeting the requirement for protecting a reactor body in a dynamic simulation test.
Description
Technical field
The present invention relates to a kind of dynamic analog device and method thereof of super, extra high voltage controllable magnetic control shunt reactor, belong to each electric pressure Electrical Power System Dynamic analogue system field.
Background technology
Controllable parallel reactors can be regulated the capacity of self automatically with the variation of circuit through-put power, and can reduce the line loop operation overvoltage level, improves the on-road efficiency of electrical network; The caused dynamic stability of system disturbance is swift in response, suppresses voltage fluctuation, improve the stability of a system, increase ability to transmit electricity, suppress the system power vibration.The application of controllable parallel reactors in super, system for ultra-high voltage transmission become one of power system development direction.National grid simulation centre dynamic model experiment chamber, in order further to promote to dynamic simulative emulation ability super, the UHV transmission technology, expansion is listed research super, the extra high voltage controllable magnetic control shunt reactor Dynamic Simulation Method in " sub-problem is built in national grid simulation centre-dynamic model experiment chamber " in the simulation context of AC transmission system.
Chinese patent application 200620132038.5 discloses the shunt reactor that a kind of dynamic simulation experiment is used, this shunt reactor is single-phase dry reactor, core structure is the square shape iron core of dual U-shaped iron prop butt joint, and dual U-shaped iron prop joint is gapped, and iron prop is shaped as incomplete cylinder.Winding comprises 4 sub-windings, and each sub-winding has 18 layers, every layer 23 circle; The every two-layer stature of taking out of first sub-winding, the second and the 3rd sub-winding does not add centre tap, and the 4th sub-winding in the end 23 circle places adds 1 tap.
Patent 200620132038.5 is the shunt reactor analogue means of fixed capacity; its capacity can not change in being set in running, and this device can not be used to the verification test work of the route protection that carries out the controlled parallel reactor device main body protection and have controlled parallel reactor device.
Analogue means of the present invention and method thereof can realize manual or automatic capacity switching controls according to system situation in running; and make the respective volume adjustment according to route protection and line switching operational circumstances; in conjunction with the dynamic analog test method in this patent, can finish the verification test work that the route protection of controllable magnetic control shunt reactor device was protected and had to the controllable magnetic control shunt reactor device body.
Summary of the invention
The objective of the invention is on the basis of the 26S Proteasome Structure and Function of the 500kV controllable magnetic control shunt reactor that reference China has put into operation, the technical situation that the controllable magnetic control shunt reactor that looks to the future is simultaneously used in 750kV and 1000kV transmission system, research is super, the Dynamic Simulation Method of extra high voltage controllable magnetic control shunt reactor, and the dynamic analog device of the controllable magnetic control shunt reactor of different capabilities in 500kV, 750kV, the 1000kV transmission system can be accurately simulated in design.
Technical scheme of the present invention is a kind of super, extra high voltage controllable magnetic control shunt reactor dynamic analog device, comprising: single-phase magnet controlled reactor, high-pressure side winding, the little reactance of neutral point, field winding, rectification unit, rectifier transformer, microcomputerized controller, host computer and vacuum contactor; Wherein,
The body of described analogue means is made up of three single-phase magnet controlled reactors, each single-phase magnet controlled reactor is three rod structures, two stem stems in next door are the work iron core, and each work is wound with on iron core and exchanges main winding and DC control coil, are connected to electrical network after the interchange main winding parallel connection on two iron core column; The interchange main winding of three-phase magnet controlled reactor is a Y0 Y-connection mode, and neutral point is through little reactance grounded or direct ground connection; The three-phase field winding is connected into double triangle, draws the DC control end in vertex of a triangle; Field winding and high-pressure side winding electrical isolation, thereby the fail safe and the reliability of the work of assurance analogue means; Analogue means adopts the pattern of external dc excitation Control current to change the output capacity of reactor, rectification unit is formed single-phase controlled rectification loop by two thyristor modules, by rectifier transformer the 220V alternating current of input is changed into and to insert the controlled rectification loop behind the 36V, the lock unit of while access controller, export the thyristor of four groups of control impuls by controller to rectification unit, by changing the angle of flow of thyristor, thereby change the size of exciting current, the direct voltage of rectification output directly connects the energizing loop inlet of controlled reactor;
The interchange main winding of described three single-phase magnet controlled reactors is provided with 12 turn-to-turn short circuit taps, can be respectively from the high-pressure side and the shorted-turn fault of neutral point side simulation 1%～25%, the field winding of described three single-phase magnet controlled reactors is provided with 7 turn-to-turn short circuit taps, can intend 1%～25% shorted-turn fault from the neutral point side form.
Wherein, this analogue means body primary side is installed current transformer and voltage transformer, is used for satisfying the needs of dynamic analog test reactor main body protection.
Wherein, use following technology in this analogue means:
(1) the maximum output capacity control technology of analogue means, this technology by in microcomputerized controller, be provided with reactor rating operating voltage, output-current rating, calculate indirectly that the maximum output capacity of reactor realizes, when the operation of reality, when system's working voltage changes, reactor allows the lowest high-current value of output also with linear change, and promptly the maximum output capacity value of reactor is also changing;
(2) by set point control output capacity technology, this mode can be set at and drop into or withdraw from, when this mode of input, no matter why the controllable parallel reactors output capacity is worth, can set the size of the output capacity of controlled reactor by microcomputerized controller, can the scope of establishing be 0～100% rated capacity, after setting is finished, microcomputerized controller is controlled controlled reactor automatically output capacity is adjusted into this set point, also can be by adjusting the output capacity that increases the control angle, reduces to control angle button manual adjustment reactor;
(3) press line voltage distribution target control output capacity technology, this mode can be set at and drop into or withdraw from, when this mode of input, can set the target voltage values of circuit by microcomputerized controller, microcomputerized controller is regulated the output capacity of controlled reactor automatically, keep line voltage distribution in target value set as far as possible, if reactor has been exported maximum capability value, line voltage distribution still is higher than desired value, reactor also no longer increases exciting current, if reactor will have been controlled exciting current and be reduced to 0, line voltage distribution still is lower than desired value, and reactor is also no longer adjusted the size of exciting current;
(4) press circuit trend target control output capacity technology, this mode can be set at and drop into or withdraw from, when this mode of input, can set the reactive power value of circuit by microcomputerized controller, microcomputerized controller is regulated the output capacity of controlled reactor automatically, and to keep circuit idle in target value set as far as possible;
(5) carry out special control technology according to the switching value state; protection outlet after system breaks down; after the line switching action; controlled reactor rapid adjustment output capacity is to predefined value; this set point can be set by the microcomputerized controller change; after switching signal resets; operational mode before reactor returns to works on; this pattern requires and (2); (3); (4) planting the control model stack uses; when protection is set to " 0 "; do not consider to protect the displacement of gate out switch amount; have only when defencive function is set to " 1 "; this defencive function is effective; dynamic analog device is realized 500kV in conjunction with the dynamic simulative emulation system of different electric pressures; the dynamic analog of controllable magnetic control shunt reactor in 750kV and the 1000kV transmission system.
The present invention also provides a kind of test method of using above-mentioned super, extra high voltage controllable magnetic control shunt reactor dynamic analog device, it is characterized in that may further comprise the steps:
(1) according to the aanalogvoltage grade surpass, the parameter designing of the dynamic analog device of extra high voltage controllable magnetic control shunt reactor device:
When being applied to the 500kV transmission line, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r, TV no-load voltage ratio k
U.rDynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m, TV no-load voltage ratio k
U.m, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
Capacity is the controllable parallel reactors of X in the simulation real system, and laboratory dynamic analog device capacity is:
M
m＝X/k
M (4-2)；
When being used for simulating the controllable parallel reactors of 750kV transmission line, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r, TV no-load voltage ratio k
U.rDynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m, TV no-load voltage ratio k
U.m, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
Then the 750kV controllable parallel reactors rated capacity that can simulate of dynamic analog device maximum is:
M
r′＝M
m×k
M′ (4-4)；
When being used for simulating the controllable parallel reactors of 1000kV transmission line, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r, TV no-load voltage ratio k
U.rDynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m, TV no-load voltage ratio k
U.m, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
The maximum capacity that can simulate the 1000kV controllable parallel reactors is:
M
r″＝M
m×k
M″............................(4-6)；
(2) design system model
Adopt generator to come the equivalent power plant of analog line one side in the model; adopt the valve system that waits of equivalent power supply analog line opposite side; the dynamic analog device of controllable parallel reactors and main body protection are installed on a side of circuit; route protection is installed on the circuit both sides; the two ends of test circuit and centre are provided with 4 fault points altogether; each fault point all is used to simulate various types of metallicity or through the fault of transition resistive short; the primary side of controllable parallel reactors dynamic analog device is provided with a fault point; be used to simulate the turn-to-turn short circuit of different range; the voltage of circuit; current signal sends line protective devices to by artificial capacitor formula voltage transformer and simulation electromagnetic current transducer, and the analogue test project of carrying out then comprises:
(a) carry out the manual volume controlled test of controlled parallel reactor device, the output capacity of controlled parallel reactor device manually is set, whether the monitoring output capacity can follow the tracks of the setting capacity;
(b) carry out the automatic volume controlled test of controlled parallel reactor device, controlled parallel reactor device is set at automatic control mode, regulate meritorious, reactive power that line voltage distribution and system carry, whether the adjusting control procedure of monitoring controlled parallel reactor device is correct;
(c) protection power down, the recovery of carrying out controlled parallel reactor device tested, and disconnects the DC power supply of controlled parallel reactor device protection, the operating state of monitoring controlled parallel reactor device in protecting the power down process; Drop into the DC power supply that disconnects, the operating state of monitoring controlled parallel reactor device in protection system recovery DC power supply process;
(d) carry out metallicity transient fault test on the circuit, the instantaneous single-phase earthing of simulation metallicity, two phase ground, line to line fault, three-phase ground connection and three-phase shortcircuit test;
(e) carry out developing fault test on the circuit; same fault point is developed into the outlet of double earthfault, protected circuit and adjacent lines through different time and is exported different name and through different time the developing fault of single phase ground fault takes place in succession between mutually in the simulation protection zone by single phase ground fault, and controlled parallel reactor device turn-to-turn and circuit are of the same name alternate with different time
The developing fault that breaks down in succession, the time interval of breaking down in succession is respectively 0～200ms;
(f) carry out transition resistance Test to Failure on the circuit, simulation in the district of different resistance transition resistances in single phase ground fault, the district phase fault and distinguish outside alternate short trouble;
(g) carry out the system stability failure test, power system oscillation process after protecting the action tripping single-phase behind single-phase jumping steathily of full phase oscillation, the line switching that analogue system static-stability destruction and moving stability disruption cause and the single-phase fault, and the district's internal and external fault in full phase and power system oscillation process;
(h) carry out that hand closes ceases to be busy and hand closes Test to Failure, the output capacity of the analogue means of controlled parallel reactor device is set at rated value, the artificial hand closes ceases to be busy and hand closes in various types of faults;
(i) a side TV, TA secondary circuit broken string are simulated in the test of breaking, and the inside and outside various faults in broken string back zone;
(j) carry out the TA saturation testing, simulation protection circuit external area error causes in various degree saturated of TA, and the simulation region internal fault causes in various degree saturated of TA;
(k) carry out transient state and surmount test, only distance protection is tested to circuit, and the impedance fixed value adjusting with protective device is 105% and 95% of protection zone respectively, the terminal different faults in simulation protection zone various metallicity faults constantly;
(l) carry out the controlled parallel reactor device interturn short circuit test, the shorted-turn fault of the different numbers of turn of dynamic analog device primary side;
(m) carry out system frequency excursion test, system frequency when 48Hz, 52Hz, the inside and outside metallicity fault of simulation region.
Beneficial effect of the present invention is:
1, by unique design, can finish dynamic analog to the controllable magnetic control shunt reactor of different electric pressure different capabilities.
2, the setting of turn-to-turn short circuit tap and voltage, current transformer; in conjunction with the various control technology; both can satisfy the experimental study demand of controllable magnetic control shunt reactor main body protection, also can satisfy the research requirement of the transmission system that has controllable magnetic control shunt reactor.
Description of drawings
The present invention is further described below in conjunction with accompanying drawing.
Fig. 1 is the wiring schematic diagram according to super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of the present invention.
Fig. 2 is the core structure schematic diagram according to super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of the present invention.
Fig. 3 is the microcomputerized controller back board structure according to super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of the present invention.
Fig. 4 is the control principle figure according to super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of the present invention.
Embodiment
1, according to the simulation Capacity Ratio of national grid simulation centre dynamic model experiment chamber 500kV, 750kV, 1000kV dynamic simulator system,
Surpass, the parameter designing of extra high voltage controllable magnetic control shunt reactor dynamic analog device.
Consider to be applied to the situation of 500kV transmission line, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r=500/1, TV no-load voltage ratio k
U.r=500/0.1; Dynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m=2/1, TV no-load voltage ratio k
U.m=1.5/0.1, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
Capacity is the controllable parallel reactors of 180Mvar in the simulation real system, and laboratory dynamic analog device capacity is:
M
m＝180Mvar/83333.3＝2.16Kvar...................(2)
When being used for simulating 750kV transmission line controllable parallel reactors, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r=800/1, TV no-load voltage ratio k
U.r=750/0.1; Dynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m=2/1, TV no-load voltage ratio k
U.m=1.5/0.1, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
Then the 750kV controllable parallel reactors rated capacity that can simulate of dynamic analog device maximum is:
M
r′＝2.16Kvar×200000＝432Mvar...................(4)
When being used for simulating 1000kV transmission line controllable parallel reactors, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r=1000/1, TV no-load voltage ratio k
U.r=1000/0.1; Dynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m=2/1, TV no-load voltage ratio k
U.m=1.5/0.1, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
The maximum capacity that can simulate the 1000kV controllable parallel reactors is:
M
r″＝2.16Kvar×333333.3＝720Mvar...................(6)
2, need with reference to actual engineering and research, surpass, the body construction and the Control System Design of extra high voltage controllable magnetic control shunt reactor dynamic analog device.
Fig. 1 is the wiring schematic diagram according to super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of the present invention, form by 8 parts altogether: 1, high-pressure side winding, 2, the little reactance of neutral point, 3, field winding, 4, rectification unit, 5, rectifier transformer, 6, microcomputerized controller, 7, host computer, 8, vacuum contactor.TV1 is a voltage transformer in the accompanying drawing, and LH1～LH8 is a current transformer.
Dynamic analog device rated capacity 2.16Kvar (single-phase capacity 0.72Kvar), short-circuit impedance percentage is 63%, according to laboratory dynamic simulator system actual conditions, rated primary voltage
Secondary side (control winding) rated voltage 220V, the capacity regulating scope of reactor is 0～100%.
The dynamic analog device body is made up of three single-phase magnet controlled reactors, each single-phase reactor is three rod structures, two stems in next door are the work iron core, and each work is wound with on iron core and exchanges main winding and DC control coil, are connected to electrical network after the interchange main winding parallel connection on two core limbs.The interchange main winding of three-phase magnet controlled reactor group is a Y0 Y-connection mode, neutral-point solid ground.Dynamic analog device adopts the pattern of external dc excitation Control current to change the output capacity of reactor, single-phase controlled rectification loop is formed by two thyristor modules in the dc magnetizing unit, by exciter transformer the 220V alternating current of input is become and to insert the controlled rectification loop behind the 36V, the lock unit of while access controller, export four groups of control impuls by controller, receive the control end of thyristor after the pulse transformer isolation, the rectification output dc voltage directly connects the energized circuit inlet of controlled reactor.By the angle of flow of change thyristor, thus the size of change exciting current.
Fig. 2 is the core structure schematic diagram according to super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of the present invention, each single-phase reactor is three rod structures, two stem stems in next door are the work iron core, each work is wound with on iron core and exchanges main winding and DC control coil, is connected to electrical network after the interchange main winding parallel connection on two iron core column.
The specific design parameter is as follows:
(1) iron core
The dynamic analog device core structure is a three pillar type,
Main iron core diameter (circle): D=100 (mm)
The long-pending area of main (greatly) core section:
A＝69.94(cm
2)
Small bore is long-pending:
Upper and lower yoke sectional area (circle): A
e=69.94 (cm
2)
Intermediolateral column sectional area (square):
(2) coil
Main coil
Primary current:
Coil turn: N=1010 (circle)
Control coil:
N
k=256 (circles)
Iron core magnet valve small bore length:
l
t＝1.5(mm)
Characteristic during for check controllable magnetic control shunt reactor failure condition, simulation magnet controlled reactor main winding is provided with 12 taps, and it is mainly used in does interturn short circuit test.The position of lighting tap from neutrality is followed successively by: 0,1%, 3%, 6%, 10%, 15%, 25%, 50%, 75%, 90%, 94%, 97%, 99%, 100%, and tap setting is convenient to be connected with external cable.The control winding is provided with 7 taps, and tap is corresponding with primary side 1%, 3%, 6%, 10%, 25%, 50%, 75%, 100%.
The installing of dynamic analog device body primary side is used for current transformer and the voltage transformer that protective device uses.Wherein primary side TA no-load voltage ratio is 2: 1, and primary side TV no-load voltage ratio is 1500: 100.
Fig. 3 is the microcomputerized controller back board structure according to super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of the present invention, form by seven blocks of back of the body plates, be respectively standby plate F, master board A, I sensor board C, II transducer D, open into leaving plate B, power panel E, standby plate G.Have on the power panel two switches be respectively the output of controller power supply switch and control impuls+the 24V mains switch.
Three-phase voltage, three-phase current and the computing system of I sensor board measuring system is meritorious, idle value etc., result transmission is given the CPU of master board by point-to-point communication mode; The II sensor board is measured the three-phase primary current of reactor output, and the size of the exciting current that injects, and is transferred to the CPU of master control borad equally by point-to-point communication; Open into leaving the information that plate is used to detect various switching values, and the physical node of the state information by G6B relay output control; Export pulse control signal in the master board, the size of the output current of control excitation unit, thereby the output capacity of control reactor.
Fig. 4 is the control principle figure according to super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of the present invention, the microcomputerized controller control wave M0 of reactor, M1, M2 connects the respective terminal of thyristor control cabinet respectively, the output of thyristor control cabinet directly connects the injection port of reactor, the size of control exciting curent.
3, determine the simulating experimental that super, extra high voltage controllable magnetic control shunt reactor dynamic analog device and the dynamic simulator system of different electric pressures engage.
(1) builds the dynamic simulative emulation system that forms by transmission line simulation, analogue transformer, simulation generator, analog power, simulation load according to the specific voltage grade.
(2) reach the rated capacity of the compensativity of capacitive reactive power being calculated required shunt reactor according to transmission line parameter.
Moment pondage when (3) setting the maximum output capacity, capacity regulating mode of super, extra high voltage controllable magnetic control shunt reactor dynamic analog device and line fault by control device.
(4) dynamic simulative emulation system energising by the closed A.C. contactor of control device, puts device into operation, carries out system voltage control.
(5) transmission line simulation fault, examination route protection action situation.
(6) super, the extra high voltage controllable magnetic control shunt reactor dynamic analog device shorted-turn fault of simulation, examination controlled reactor main body protection action situation.
Invention has been described according to specific exemplary embodiment herein.It will be conspicuous carrying out suitable replacement to one skilled in the art or revise under not departing from the scope of the present invention.Exemplary embodiment only is illustrative, rather than to the restriction of scope of the present invention, scope of the present invention is by appended claim definition.
Claims (4)
1. super, extra high voltage controllable magnetic control shunt reactor dynamic analog device is characterized in that this device comprises: single-phase magnet controlled reactor, high-pressure side winding, the little reactance of neutral point, field winding, rectification unit, rectifier transformer, microcomputerized controller, host computer and vacuum contactor; Wherein,
The body of described analogue means is made up of three single-phase magnet controlled reactors, each single-phase magnet controlled reactor is three rod structures, two stem stems in next door are the work iron core, and each work is wound with on iron core and exchanges main winding and DC control coil, are connected to electrical network after the interchange main winding parallel connection on two iron core column; The interchange main winding of three-phase magnet controlled reactor is a Y0 Y-connection mode, and neutral point is through little reactance grounded or direct ground connection; The three-phase field winding is connected into double triangle, draws the DC control end in vertex of a triangle; Field winding and high-pressure side winding electrical isolation, thereby the fail safe and the reliability of the work of assurance analogue means; Analogue means adopts the pattern of external dc excitation Control current to change the output capacity of reactor, rectification unit is formed single-phase controlled rectification loop by two thyristor modules, by rectifier transformer the 220V alternating current of input is changed into and to insert the controlled rectification loop behind the 36V, the lock unit of while access controller, export the thyristor of four groups of control impuls by controller to rectification unit, by changing the angle of flow of thyristor, thereby change the size of exciting current, the direct voltage of rectification output directly connects the energizing loop inlet of controlled reactor;
The interchange main winding of described three single-phase magnet controlled reactors is provided with 12 turn-to-turn short circuit taps, can be respectively from the high-pressure side and the shorted-turn fault of neutral point side simulation 1%～25%, the field winding of described three single-phase magnet controlled reactors is provided with 7 turn-to-turn short circuit taps, can intend 1%～25% shorted-turn fault from the neutral point side form.
2. device as claimed in claim 1 is characterized in that this analogue means body primary side installing current transformer and voltage transformer, is used for satisfying the needs of dynamic analog test reactor main body protection.
3. device as claimed in claim 2 is characterized in that using in this analogue means following technology:
(1) the maximum output capacity control technology of analogue means, this technology by in microcomputerized controller, be provided with reactor rating operating voltage, output-current rating, calculate indirectly that the maximum output capacity of reactor realizes, when the operation of reality, when system's working voltage changes, reactor allows the lowest high-current value of output also with linear change, and promptly the maximum output capacity value of reactor is also changing;
(2) by set point control output capacity technology, this mode can be set at and drop into or withdraw from, when this mode of input, no matter why the controllable parallel reactors output capacity is worth, can set the size of the output capacity of controlled reactor by microcomputerized controller, can the scope of establishing be 0～100% rated capacity, after setting is finished, microcomputerized controller is controlled controlled reactor automatically output capacity is adjusted into this set point, also can be by adjusting the output capacity that increases the control angle, reduces to control angle button manual adjustment reactor;
(3) press line voltage distribution target control output capacity technology, this mode can be set at and drop into or withdraw from, when this mode of input, can set the target voltage values of circuit by microcomputerized controller, microcomputerized controller is regulated the output capacity of controlled reactor automatically, keep line voltage distribution in target value set as far as possible, if reactor has been exported maximum capability value, line voltage distribution still is higher than desired value, reactor also no longer increases exciting current, if reactor will have been controlled exciting current and be reduced to 0, line voltage distribution still is lower than desired value, and reactor is also no longer adjusted the size of exciting current;
(4) press circuit trend target control output capacity technology, this mode can be set at and drop into or withdraw from, when this mode of input, can set the reactive power value of circuit by microcomputerized controller, microcomputerized controller is regulated the output capacity of controlled reactor automatically, and to keep circuit idle in target value set as far as possible;
(5) carry out special control technology according to the switching value state; protection outlet after system breaks down; after the line switching action; controlled reactor rapid adjustment output capacity is to predefined value; this set point can be set by the microcomputerized controller change; after switching signal resets; operational mode before reactor returns to works on; this pattern requires and (2); (3); (4) planting the control model stack uses; when protection is set to " 0 "; do not consider to protect the displacement of gate out switch amount; have only when defencive function is set to " 1 "; this defencive function is effective; dynamic analog device is realized 500kV in conjunction with the dynamic simulative emulation system of different electric pressures; the dynamic analog of controllable magnetic control shunt reactor in 750kV and the 1000kV transmission system.
4. test method of using each described super, extra high voltage controllable magnetic control shunt reactor dynamic analog device of claim 1-3 is characterized in that may further comprise the steps:
(1) according to the aanalogvoltage grade surpass, the parameter designing of the dynamic analog device of extra high voltage controllable magnetic control shunt reactor device:
When being applied to the 500kV transmission line, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r, TV no-load voltage ratio k
U.rDynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m, TV no-load voltage ratio k
U.m, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
Capacity is the controllable parallel reactors of X in the simulation real system, and laboratory dynamic analog device capacity is:
M
m＝X/k
M (4-2)；
When being used for simulating the controllable parallel reactors of 750kV transmission line, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r, TV no-load voltage ratio k
U.rDynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m, TV no-load voltage ratio k
U.m, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
Then the 750kV controllable parallel reactors rated capacity that can simulate of dynamic analog device maximum is:
M
r′＝M
m×k
M′ (4-4)；
When being used for simulating the controllable parallel reactors of 1000kV transmission line, controllable parallel reactors TA no-load voltage ratio k in the real system
I.r, TV no-load voltage ratio k
U.rDynamic model system controllable parallel reactors in laboratory is chosen TA no-load voltage ratio k
I.m, TV no-load voltage ratio k
U.m, then the Capacity Ratio of controllable parallel reactors and laboratory dynamic analog device is in the real system:
The maximum capacity that can simulate the 1000kV controllable parallel reactors is:
M
r″＝M
m×k
M″.........................(4-6)；
(2) design system model
Adopt generator to come the equivalent power plant of analog line one side in the model; adopt the valve system that waits of equivalent power supply analog line opposite side; the dynamic analog device of controllable parallel reactors and main body protection are installed on a side of circuit; route protection is installed on the circuit both sides; the two ends of test circuit and centre are provided with 4 fault points altogether; each fault point all is used to simulate various types of metallicity or through the fault of transition resistive short; the primary side of controllable parallel reactors dynamic analog device is provided with a fault point; be used to simulate the turn-to-turn short circuit of different range; the voltage of circuit; current signal sends line protective devices to by artificial capacitor formula voltage transformer and simulation electromagnetic current transducer, and the analogue test project of carrying out then comprises:
(a) carry out the manual volume controlled test of controlled parallel reactor device, the output capacity of controlled parallel reactor device manually is set, whether the monitoring output capacity can follow the tracks of the setting capacity;
(b) carry out the automatic volume controlled test of controlled parallel reactor device, controlled parallel reactor device is set at automatic control mode, regulate meritorious, reactive power that line voltage distribution and system carry, whether the adjusting control procedure of monitoring controlled parallel reactor device is correct;
(c) protection power down, the recovery of carrying out controlled parallel reactor device tested, and disconnects the DC power supply of controlled parallel reactor device protection, the operating state of monitoring controlled parallel reactor device in protecting the power down process; Drop into the DC power supply that disconnects, the operating state of monitoring controlled parallel reactor device in protection system recovery DC power supply process;
(d) carry out metallicity transient fault test on the circuit, the instantaneous single-phase earthing of simulation metallicity, two phase ground, line to line fault, three-phase ground connection and three-phase shortcircuit test;
(e) carry out developing fault test on the circuit, same fault point is developed into the outlet of double earthfault, protected circuit and adjacent lines through different time and is exported different name and through different time the developing fault of single phase ground fault takes place in succession between mutually in the simulation protection zone by single phase ground fault, controlled parallel reactor device turn-to-turn and the circuit alternate developing fault that breaks down in succession through different time of the same name, the time interval of breaking down in succession is respectively 0～200ms;
(f) carry out transition resistance Test to Failure on the circuit, simulation in the district of different resistance transition resistances in single phase ground fault, the district phase fault and distinguish outside alternate short trouble;
(g) carry out the system stability failure test, power system oscillation process after protecting the action tripping single-phase behind single-phase jumping steathily of full phase oscillation, the line switching that analogue system static-stability destruction and moving stability disruption cause and the single-phase fault, and the district's internal and external fault in full phase and power system oscillation process;
(h) carry out that hand closes ceases to be busy and hand closes Test to Failure, the output capacity of the analogue means of controlled parallel reactor device is set at rated value, the artificial hand closes ceases to be busy and hand closes in various types of faults;
(i) a side TV, TA secondary circuit broken string are simulated in the test of breaking, and the inside and outside various faults in broken string back zone;
(j) carry out the TA saturation testing, simulation protection circuit external area error causes in various degree saturated of TA, and the simulation region internal fault causes in various degree saturated of TA;
(k) carry out transient state and surmount test, only distance protection is tested to circuit, and the impedance fixed value adjusting with protective device is 105% and 95% of protection zone respectively, the terminal different faults in simulation protection zone various metallicity faults constantly;
(l) carry out the controlled parallel reactor device interturn short circuit test, the shorted-turn fault of the different numbers of turn of dynamic analog device primary side;
(m) carry out system frequency excursion test, system frequency when 48Hz, 52Hz, the inside and outside metallicity fault of simulation region.
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