CN101740497A

CN101740497A - Method for manufacturing microdisplay

Info

Publication number: CN101740497A
Application number: CN200810173464A
Authority: CN
Inventors: 李政勋; 吴沂庭; 孙伟宸; 姜元升
Original assignee: United Microelectronics Corp
Current assignee: United Microelectronics Corp
Priority date: 2008-11-14
Filing date: 2008-11-14
Publication date: 2010-06-16

Abstract

The invention discloses a method for manufacturing a microdisplay, which comprises the following steps: firstly, providing a substrate with a pixel area and a peripheral circuit area, wherein the pixel area is provided with a metal reflecting layer, and the peripheral circuit area is provided with a peripheral circuit; secondly, forming a dielectric layer on the substrate to cover the pixel area and the peripheral circuit area; thirdly, forming a patterned mask layer on the dielectric layer, wherein the patterned mask layer exposes the dielectric layer on the metal reflecting layer; fourthly, taking the patterned mask layer as a mask and removing a part of the exposed dielectric layer; fifthly, removing the patterned mask layer; and finally, removing partial dielectric layer to expose the metal reflecting layer.

Description

The manufacture method of miniscope

Technical field

The present invention relates to the manufacture method of a kind of miniscope (micro-display), and particularly relate to the manufacture method that to avoid specular layer (mirror layer) to suffer damage and avoid a kind of miniscope of peripheral circuit (periphery circuit) oxidation.

Background technology

Liquid crystal pixel structure in recent years is being widely used in the daily life gradually, as the liquid crystal screen of LCD TV, laptop computer or desktop computer and liquid crystal projector etc.Miniscope can be applied to all types of displays, as LCD or organic light emitting diode display.

In general, in the miniscope product, can utilize aluminium (Al) to be used as the material of specular layer usually, have preferred reflectivity to guarantee specular layer.In the manufacture method of miniscope, for the dielectric layer on the specular layer is removed to expose specular layer, traditional technology is to utilize comprehensive etching (blanket etch) or chemical mechanical polishing method (chemical mechanical polish CMP) removes dielectric layer on the specular layer.Yet, when the dielectric layer that removes with comprehensive etching or chemical mechanical polishing method on the specular layer, the dielectric layer on the peripheral circuit can be removed simultaneously inevitably, make peripheral circuit come out, thereby cause problems such as peripheral circuit oxidation, and have a strong impact on element efficiency.

Cause peripheral circuit to expose and the problem of oxidation for fear of comprehensive etching or chemical mechanical polishing method, can utilize photoetching process and etch process to remove dielectric layer on the specular layer usually.Yet, after the dielectric layer on removing specular layer, specular layer can be removed the employed solution of photoresist and corrode in the process of follow-up removal photoresist, cause the surface irregularity of specular layer, thereby cause the reflecting effect of specular layer to reduce, and influence the reliability of element.

Summary of the invention

In view of this, purpose of the present invention is exactly that a kind of manufacture method of miniscope is being provided, and it can be avoided specular layer to suffer damage and avoid the peripheral circuit oxidation.

The present invention proposes a kind of manufacture method of miniscope, it is the substrate that have pixel region (pixelregion) and periphery circuit region (periphery region) is provided earlier, wherein pixel region has been formed with metallic reflector, and periphery circuit region has been formed with peripheral circuit.Then, in substrate, form dielectric layer, to cover pixel region and periphery circuit region.Then, form patterned mask layer on dielectric layer, this patterned mask layer exposes the dielectric layer that is positioned at the metallic reflector top.Then, be mask with the patterned mask layer, remove the part of the dielectric layer that exposes.Continue it, remove patterned mask layer.Afterwards, remove the part dielectric layer, to expose metallic reflector.

According to the manufacture method of the described miniscope of the embodiment of the invention, the material of above-mentioned metallic reflector for example is aluminium, gold or silver-colored.

According to the manufacture method of the described miniscope of the embodiment of the invention, the method for an above-mentioned part that removes the dielectric layer that exposes for example is the dry-etching method.

According to the manufacture method of the described miniscope of the embodiment of the invention, above-mentioned remove the part dielectric layer with the method that exposes metallic reflector for example for carrying out comprehensive etching, up to exposing metallic reflector.

According to the manufacture method of the described miniscope of the embodiment of the invention, the material of above-mentioned patterned mask layer for example is a photoresist.

The present invention utilizes photoetching process and etch process to remove a part of dielectric layer on the metallic reflector earlier, and keep a part of dielectric layer on metallic reflector, therefore can make metallic reflector in removing the process of photoresist, avoid contacting and suffering damage, and can avoid peripheral circuit in comprehensive etched process, to be exposed and cause the problem of oxidation with removing the employed solution of photoresist.

For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate institute's accompanying drawing, be described in detail below.

Description of drawings

Figure 1A to Fig. 1 D is the generalized section according to the manufacture method of the miniscope that the embodiment of the invention illustrated.

Description of reference numerals

100: substrate 101: pixel region

102: metallic reflector 103: periphery circuit region

104: peripheral circuit 106: dielectric layer

108: patterned mask layer 110,112: opening

Embodiment

Figure 1A to Fig. 1 D is the generalized section according to the manufacture method of the miniscope that the embodiment of the invention illustrated.At first, please refer to Figure 1A, the substrate 100 with pixel region 101 and periphery circuit region 103 is provided, wherein pixel region 101 has been formed with metallic reflector 102, and periphery circuit region 103 has been formed with peripheral circuit 104.Substrate 100 for example is a silicon base.The material of metallic reflector 102 for example is aluminium, gold, silver or other suitable metallic reflective material.Metallic reflector 102 is intended for the specular layer in the miniscope.Therefore, when light was incident in the miniscope, metallic reflector 102 can reflect back light.In addition, in the present embodiment, periphery circuit region 103 for example is a side that is positioned at pixel region 101.In another embodiment, periphery circuit region 103 for example is around pixel region 101, that is peripheral circuit 104 is around metallic reflector 102.

Then, please continue, in substrate 100, form dielectric layer 106, to cover pixel region 101 and periphery circuit region 103 with reference to Figure 1A.The material of dielectric layer 106 for example is an oxide.The formation method of dielectric layer 106 for example is a chemical vapour deposition technique.

Then, please refer to Figure 1B, on dielectric layer 106, form patterned mask layer 108.Patterned mask layer 108 exposes the dielectric layer 106 that is positioned at metallic reflector 102 tops, that is the follow-up zone of desiring to expose metallic reflector 102.The material of patterned mask layer 108 for example is a photoresist.Then, be mask with patterned mask layer 108, remove the part of the dielectric layer 106 that exposes, in dielectric layer 106, to form opening 110.The method that removes the part of the dielectric layer 106 that exposes for example is the dry-etching method.Special one what carry is can control the degree of depth of formed opening 110 by the time of control etching dielectric layer 106, the then visual actual demand of the degree of depth of opening 110 and adjusting.Importantly, in this step, form after the opening 110, still must remain with dielectric layer 106 on the metallic reflector 102 removing part dielectric layer 106.

Continue it, please refer to Fig. 1 C, remove patterned mask layer 108.Owing to still remain with dielectric layer 106 on the metallic reflector 102, therefore in the process that removes patterned mask layer 108, can avoid being used for removing patterned mask layer 108 employed solution attack metal reflector 102 and cause damage, to keep the profile pattern of metallic reflector 102.

Afterwards, please refer to Fig. 1 D, remove part dielectric layer 106 and formation opening 112, to expose metallic reflector 102.The method that removes part dielectric layer 106 is for example for carrying out comprehensive etching, up to exposing metallic reflector 102.In this step, because the thickness of the dielectric layer 106 in the opening 110 is less than the thickness of the dielectric layer 106 of other positions, therefore after carrying out comprehensive etching the dielectric layer in the opening 110 106 being removed, the dielectric layer 106 of peripheral circuit 104 tops can't be made peripheral circuit 104 come out by whole removing.In addition, because dielectric layer 106 still is covered on the peripheral circuit 104, therefore can avoid the problem of peripheral circuit 104 oxidations.

In sum, the present invention utilizes photoetching process and etch process to remove a part of dielectric layer on the metallic reflector earlier, and then utilize comprehensive etching to remove remaining dielectric layer on the metallic reflector, therefore can avoid in comprehensive etched process, peripheral circuit being come out, solve the problem of peripheral circuit oxidation.

In addition, because photoetching process and etch process have only removed a part of dielectric layer on the metallic reflector earlier, make the dielectric layer that still remains with a part on the metallic reflector, therefore in removing the process of photoresist metallic reflector can't with remove the employed solution of photoresist and contact, the problem of having avoided metallic reflector to be corroded by solution, and kept the profile pattern of metallic reflector.

Though the present invention discloses as above with embodiment; right its is not in order to qualification the present invention, any persons skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.

Claims

1. the manufacture method of a miniscope comprises:

Substrate is provided, and this substrate has pixel region and periphery circuit region, and wherein this pixel region has been formed with metallic reflector, and this periphery circuit region has been formed with peripheral circuit;

In this substrate, form dielectric layer, to cover this pixel region and this periphery circuit region;

Form patterned mask layer on this dielectric layer, this patterned mask layer exposes this dielectric layer that is positioned at this metallic reflector top;

With this patterned mask layer is mask, removes the part of this dielectric layer that exposes;

Remove this patterned mask layer; And

Remove this dielectric layer of part, to expose this metallic reflector.

2. the manufacture method of miniscope as claimed in claim 1, wherein the material of this metallic reflector comprises aluminium, gold or silver-colored.

3. the manufacture method of miniscope as claimed in claim 1, the method that wherein removes the part of this dielectric layer that exposes comprises the dry-etching method.

4. the manufacture method of miniscope as claimed in claim 1 wherein removes this dielectric layer of part and comprises with the method that exposes this metallic reflector and carry out comprehensive etching, up to exposing this metallic reflector.

5. the manufacture method of miniscope as claimed in claim 1, wherein the material of this patterned mask layer is a photoresist.