CN101740334B - Photoetching pretreating method and photoetching method - Google Patents
Photoetching pretreating method and photoetching method Download PDFInfo
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- CN101740334B CN101740334B CN200810226331A CN200810226331A CN101740334B CN 101740334 B CN101740334 B CN 101740334B CN 200810226331 A CN200810226331 A CN 200810226331A CN 200810226331 A CN200810226331 A CN 200810226331A CN 101740334 B CN101740334 B CN 101740334B
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Abstract
The invention discloses a photoetching pretreating method and a photoetching method. In the invention, before spin coating the photoresist, a semiconductor substrate is thermally treated without oxygen at the temperature of 900 DEG C-1100 DEG C for a duration time of 25 seconds-35 seconds, so that basic compounds on the surface of the semiconductor substrate are decomposed, and in the following exposure process related to photoetching, photoacid generated by the photoresist spin coated on the surface of the semiconductor substrate can not chemically react with the basic compounds, thus not generating residue formed by depositing in the photoresist at the bottom of a groove.
Description
Technical field
The present invention relates to semiconductor processing technology, particularly a kind of photoetching pretreating method and a kind of photoetching method.
Background technology
In existing photoetching process; Direct surperficial spin coating photoresist at semiconductor substrate; Then through photolithography plate to photoresist selectivity exposure, again through develop, cleaning and removing removes by the part photoresist of sensitization, thereby make form in the photoresist of spin coating with photolithography plate in the corresponding groove of pattern.And in the ion implantation process after photoetching, can ion be injected into the correspondence position of semiconductor substrate through this groove.
Yet; The photoresist of semiconductor-based surface can produce light acid in exposure process and there is alkali compounds in semiconductor-based surface owing to be spun on; Thereby the light acid that in exposure process, produces of photoresist can with the alkali compounds generation chemical reaction of semiconductor-based surface; And the residue that this chemical reaction produced can be deposited on the channel bottom both sides that form in the photoresist usually, thereby the ion that influences after the photoetching injects.
Ion implantation process to form shallow junction is an example; As shown in Figure 1; The surface of semiconductor substrate has etched active area (Active Area) 11 and polycrystalline grid (poly gate) 12; If directly, then after exposure, have the polycrystalline grid 12 root places that above-mentioned residue 10 is deposited on the channel bottom both sides at the surperficial spin coating photoresist of this semiconductor substrate.Thus; The residue 10 of deposition might extend near active area 11 places the polycrystalline grid 12; Thereby inject under the less situation of the degree of depth at ion; Make the ion that should be injected into active area 11 hindered by residue 10, thus the active area 11 formed shallow junctions behind the influence injection ion.
And; For size less polycrystalline grid 12, for example 65nm, the width of groove is also just more little, correspondingly; Active area 11 is also just more little apart from the distance of polycrystalline grid 12 roots, and the residue 10 that is deposited on polycrystalline grid 12 root places so just might extend to active area 11 places more.
Summary of the invention
In view of this, the invention provides a kind of photoetching pretreating method and a kind of photoetching method, can keep away and in photoetching process, produce residue.
A kind of photoetching pretreating method provided by the invention comprises:
Utilize Equipment for Heating Processing semiconductor substrate to be carried out anaerobic heat treatment with the arbitrary temp between 900 ℃～1100 ℃;
After said anaerobic heat treatment duration arrives 25 seconds～35 seconds, makes that the alkali compounds of semiconductor-based surface decomposes, stop heat treatment;
After treating semiconductor substrate annealing, it is taken out from Equipment for Heating Processing.
Before beginning heat treatment, the further heat treated device interior of this method charges into protective gas.
Said protective gas is a nitrogen.
Said Equipment for Heating Processing is carried out anaerobic heat treatment with 1000 ℃ to semiconductor substrate.
The said duration is 30 seconds.
The surface etch of said semiconductor substrate has polycrystalline grid and active area.
A kind of photoetching method provided by the invention comprises:
Surperficial spin coating photoresist at semiconductor substrate;
Through photolithography plate the photoresist selectivity is made public;
Removal is by the part photoresist of sensitization;
It is characterized in that said before the surperficial spin coating photoresist of semiconductor substrate, this method also comprises:
Utilize Equipment for Heating Processing semiconductor substrate to be carried out anaerobic heat treatment with the arbitrary temp between 900 ℃～1100 ℃;
After said anaerobic heat treatment duration arrives 25 seconds～35 seconds, makes that the alkali compounds of semiconductor-based surface decomposes, stop heat treatment;
After treating semiconductor substrate annealing, it is taken out from Equipment for Heating Processing.
Before beginning heat treatment, the further heat treated device interior of this method charges into protective gas.
Said protective gas is a nitrogen.
Said Equipment for Heating Processing is carried out anaerobic heat treatment with 1000 ℃ to semiconductor substrate.
The said duration is 30 seconds.
The surface etch of said semiconductor substrate has polycrystalline grid and active area.
Visible by technique scheme; The present invention is before the spin coating photoresist; Earlier semiconductor substrate being carried out 900 ℃～1100 ℃ of temperature, duration is 25 seconds～35 seconds anaerobic heat treatment; Thereby can make the alkali compounds of semiconductor-based surface be decomposed; Thereby in the related exposure process of follow-up photoetching, the light acid that photoresist produced that is spun on semiconductor-based surface can not carried out chemical reaction with this alkali compounds, and then just can not produce the residue that is deposited on the channel bottom that forms in the photoresist.
And, can be filled with in the Equipment for Heating Processing and do not relate to a large amount of combination reactions in protective gas and the Equipment for Heating Processing, thereby can also guarantee that semiconductor substrate is not contaminated.
Description of drawings
Fig. 1 is the sketch map that the residue deposition is arranged after the photoetching in the prior art.
Fig. 2 is the exemplary process diagram of photoresist preprocess method in the embodiment of the invention.
Fig. 3 is the sketch map that noresidue deposits after the photoetching in the embodiment of the invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
Fig. 2 is the exemplary process diagram of photoresist preprocess method in the embodiment of the invention.As shown in Figure 2, this method was carried out before the spin coating photoresist, and comprised the steps:
Step 201 puts into semiconductor substrate to Equipment for Heating Processing, with the arbitrary temp between 900 ℃～1100 ℃ semiconductor substrate is carried out anaerobic heat treatment by this Equipment for Heating Processing.Wherein, preferably adopt 1000 ℃ to carry out anaerobic heat treatment.
In this step, can a plurality of semiconductor substrates be put into to Equipment for Heating Processing simultaneously, to improve heat treatment efficiency; And, be anaerobic heat treatment because Equipment for Heating Processing carries out, thereby before beginning heat treatment, also need the heat treated device interior to charge into protective gas, for example inert gas or nitrogen etc., wherein, the cost of nitrogen is relatively low thereby more commonly used.
Step 202 after the anaerobic heat treatment duration arrives 25 seconds～35 seconds, makes that the alkali compounds of semiconductor-based surface decomposes, stops heat treatment.
In the practical application; The accurate value of the duration that this step is related can be different according to the difference of temperature, the semiconductor substrate quantity of heat-treating simultaneously, the difference of the difference of Equipment for Heating Processing performance and protective gas type and recording through experiment.Wherein, when heat treatment temperature is 1000 ℃, confirm that preferably the duration is 30 seconds.
Step 203, treat semiconductor substrate annealing after, it is taken out from Equipment for Heating Processing.
So far, this flow process finishes.
After finishing above-mentioned photoetching pretreatment process as shown in Figure 2; Can be according to the surperficial spin coating photoresist of existing mode at semiconductor substrate; Through photolithography plate the photoresist selectivity is made public then; Again through develop, cleaning and removing removes by the part photoresist of sensitization, thereby make form in the photoresist of spin coating with photolithography plate in the corresponding groove of pattern.
It is thus clear that; Present embodiment is before the spin coating photoresist; Earlier semiconductor substrate being carried out 900 ℃～1100 ℃ of temperature, duration is 25 seconds～35 seconds anaerobic heat treatment; Thereby can make the alkali compounds of semiconductor-based surface be decomposed; Thereby in the related exposure process of follow-up photoetching, the light acid that photoresist produced that is spun on semiconductor-based surface can not carried out chemical reaction with this alkali compounds, and then just can not produce the residue that is deposited on the channel bottom that forms in the photoresist.
Be example still with the ion implantation process that forms shallow junction; As shown in Figure 3; The surface of semiconductor substrate has etched active area 11 and polycrystalline grid 12; Because alkaline matter that in advance will this semiconductor-based surface decomposes, thereby after exposure, do not have residue to be deposited on the polycrystalline grid 12 root places of channel bottom both sides, thereby no matter how little the ion injection degree of depth is; The ion that should be injected into active area 11 all can be injected into active area 11, thereby can not influence the active area 11 formed shallow junctions behind the injection ion.
And owing to there is not the deposition of residue, therefore, even if littler, the for example 65nm of size of polycrystalline grid 12, the width of groove and active area 11 are also smaller apart from the distance of polycrystalline grid 12 roots, also can not receive influence to the ion injection of active area 11.
In addition, do not relate to a large amount of combination reactions in protective gas and the Equipment for Heating Processing owing to be filled with in the Equipment for Heating Processing, thereby can also guarantee that semiconductor substrate is not contaminated.In practical application, the employed Equipment for Heating Processing of present embodiment can be the employed Equipment for Heating Processing of " rapid thermal annealing " this operation in the existing semiconductor fabrication processes.Like this, two procedures can shared same equipment, has saved the cost of semiconductor machining; And also need use protective gas in " rapid thermal annealing " this operation and not relate to a large amount of combination reactions, thereby can guarantee still that with the shared same equipment of this operation semiconductor substrate is not contaminated.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (12)
1. a photoetching pretreating method is applied in before the surperficial spin coating photoresist of semiconductor substrate, it is characterized in that this method comprises:
Utilize Equipment for Heating Processing semiconductor substrate to be carried out anaerobic heat treatment with the arbitrary temp between 900 ℃～1100 ℃;
After said anaerobic heat treatment duration arrives 25 seconds～35 seconds, makes that the alkali compounds of semiconductor-based surface decomposes, stop heat treatment;
After treating semiconductor substrate annealing, it is taken out from Equipment for Heating Processing.
2. the method for claim 1 is characterized in that, before beginning heat treatment, the further heat treated device interior of this method charges into protective gas.
3. method as claimed in claim 2 is characterized in that, said protective gas is a nitrogen.
4. like any described method in the claim 1 to 3, it is characterized in that said Equipment for Heating Processing is carried out anaerobic heat treatment with 1000 ℃ to semiconductor substrate.
5. method as claimed in claim 4 is characterized in that, the said duration is 30 seconds.
6. like any described method in the claim 1 to 3, it is characterized in that the surface etch of said semiconductor substrate has polycrystalline grid and active area.
7. photoetching method comprises:
Surperficial spin coating photoresist at semiconductor substrate;
Through photolithography plate the photoresist selectivity is made public;
Removal is by the part photoresist of sensitization;
It is characterized in that said before the surperficial spin coating photoresist of semiconductor substrate, this method also comprises:
Utilize Equipment for Heating Processing semiconductor substrate to be carried out anaerobic heat treatment with the arbitrary temp between 900 ℃～1100 ℃;
After said anaerobic heat treatment duration arrives 25 seconds～35 seconds, makes that the alkali compounds of semiconductor-based surface decomposes, stop heat treatment;
After treating semiconductor substrate annealing, it is taken out from Equipment for Heating Processing.
8. method as claimed in claim 7 is characterized in that, before beginning heat treatment, the further heat treated device interior of this method charges into protective gas.
9. method as claimed in claim 8 is characterized in that, said protective gas is a nitrogen.
10. like any described method in the claim 7 to 9, it is characterized in that said Equipment for Heating Processing is carried out anaerobic heat treatment with 1000 ℃ to semiconductor substrate.
11. method as claimed in claim 10 is characterized in that, the said duration is 30 seconds.
12., it is characterized in that the surface etch of said semiconductor substrate has polycrystalline grid and active area like any described method in the claim 7 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810226331A CN101740334B (en) | 2008-11-13 | 2008-11-13 | Photoetching pretreating method and photoetching method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810226331A CN101740334B (en) | 2008-11-13 | 2008-11-13 | Photoetching pretreating method and photoetching method |
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| CN101740334A CN101740334A (en) | 2010-06-16 |
| CN101740334B true CN101740334B (en) | 2012-10-03 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102496558B (en) * | 2011-11-24 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | The surface treatment method of semiconductor crystal wafer, avoid the method that photoresist remains |
| CN107785246B (en) * | 2016-08-30 | 2022-10-14 | 联芯集成电路制造(厦门)有限公司 | Method for ion implantation of substrate |
| CN108666222B (en) * | 2017-04-01 | 2021-06-25 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878627B1 (en) * | 2002-06-10 | 2005-04-12 | United Microelectronics Corporation | Semiconductor device with cobalt silicide contacts and method of making the same |
| CN1756995A (en) * | 2003-03-07 | 2006-04-05 | 旭硝子株式会社 | Photosensitive resin composition and coating film cured product thereof |
| CN1875488A (en) * | 2003-10-28 | 2006-12-06 | 株式会社半导体能源研究所 | Liquid crystal display device, its manufacturing method, and liquid crystal television receiver |
| CN101106066A (en) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | Making method for semiconductor part removing residual polyester in etching |
| CN101189721A (en) * | 2005-06-02 | 2008-05-28 | 富士通株式会社 | Semiconductor device and its making method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878627B1 (en) * | 2002-06-10 | 2005-04-12 | United Microelectronics Corporation | Semiconductor device with cobalt silicide contacts and method of making the same |
| CN1756995A (en) * | 2003-03-07 | 2006-04-05 | 旭硝子株式会社 | Photosensitive resin composition and coating film cured product thereof |
| CN1875488A (en) * | 2003-10-28 | 2006-12-06 | 株式会社半导体能源研究所 | Liquid crystal display device, its manufacturing method, and liquid crystal television receiver |
| CN101189721A (en) * | 2005-06-02 | 2008-05-28 | 富士通株式会社 | Semiconductor device and its making method |
| CN101106066A (en) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | Making method for semiconductor part removing residual polyester in etching |
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