CN101730939A - A technique for enhancing transistor performance by transistor specific contact design - Google Patents
A technique for enhancing transistor performance by transistor specific contact design Download PDFInfo
- Publication number
- CN101730939A CN101730939A CN200880013012.0A CN200880013012A CN101730939A CN 101730939 A CN101730939 A CN 101730939A CN 200880013012 A CN200880013012 A CN 200880013012A CN 101730939 A CN101730939 A CN 101730939A
- Authority
- CN
- China
- Prior art keywords
- contact
- transistor
- drain
- semiconductor device
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000013461 design Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title abstract description 33
- 230000002708 enhancing effect Effects 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000010410 layer Substances 0.000 claims description 50
- 239000003989 dielectric material Substances 0.000 claims description 30
- 239000011229 interlayer Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 abstract description 19
- 230000003993 interaction Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000006835 compression Effects 0.000 description 7
- 238000007906 compression Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002650 habitual effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007020258.1A DE102007020258B4 (en) | 2007-04-30 | 2007-04-30 | Technique for improving the transistor conduction behavior by a transistor-specific contact design |
DE102007020258.1 | 2007-04-30 | ||
US11/964,494 | 2007-12-26 | ||
US11/964,494 US7964970B2 (en) | 2007-04-30 | 2007-12-26 | Technique for enhancing transistor performance by transistor specific contact design |
PCT/US2008/004958 WO2008133832A1 (en) | 2007-04-30 | 2008-04-17 | A technique for enhancing transistor performance by transistor specific contact design |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101730939A true CN101730939A (en) | 2010-06-09 |
CN101730939B CN101730939B (en) | 2012-09-26 |
Family
ID=39809495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880013012.0A Active CN101730939B (en) | 2007-04-30 | 2008-04-17 | A technique for enhancing transistor performance by transistor specific contact design |
Country Status (8)
Country | Link |
---|---|
US (2) | US7964970B2 (en) |
JP (1) | JP2010526437A (en) |
KR (1) | KR101380880B1 (en) |
CN (1) | CN101730939B (en) |
DE (1) | DE102007020258B4 (en) |
GB (1) | GB2461209A (en) |
TW (1) | TWI443828B (en) |
WO (1) | WO2008133832A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107851583A (en) * | 2015-08-21 | 2018-03-27 | 日立汽车***株式会社 | Semiconductor device, semiconductor integrated circuit and load drive device |
CN109728071A (en) * | 2017-10-30 | 2019-05-07 | 台湾积体电路制造股份有限公司 | It is doped with the semiconductor devices of conductive component |
CN111987090A (en) * | 2019-05-21 | 2020-11-24 | 世界先进积体电路股份有限公司 | Semiconductor device structure |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5148932B2 (en) * | 2006-06-30 | 2013-02-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US7968952B2 (en) * | 2006-12-29 | 2011-06-28 | Intel Corporation | Stressed barrier plug slot contact structure for transistor performance enhancement |
JP2008218564A (en) | 2007-03-01 | 2008-09-18 | Matsushita Electric Ind Co Ltd | Semiconductor device |
DE102009031111B4 (en) | 2009-06-30 | 2011-04-28 | Globalfoundries Dresden Module One Llc & Co. Kg | Contact optimization to improve stress transmission in dense transistors |
CN102299096B (en) * | 2010-06-22 | 2017-08-01 | 中国科学院微电子研究所 | Method for manufacturing contact of semiconductor device and semiconductor device having the contact |
US8487376B2 (en) | 2010-08-18 | 2013-07-16 | Intel Corporation | High-voltage transistor architectures, processes of forming same, and systems containing same |
JP2012059945A (en) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
US8518811B2 (en) * | 2011-04-08 | 2013-08-27 | Infineon Technologies Ag | Schottky diodes having metal gate electrodes and methods of formation thereof |
US20130240997A1 (en) * | 2012-03-19 | 2013-09-19 | International Business Machines Corporation | Contact bars for modifying stress in semiconductor device and related method |
US8981481B2 (en) | 2012-06-28 | 2015-03-17 | Intel Corporation | High voltage three-dimensional devices having dielectric liners |
JP5923046B2 (en) * | 2013-01-11 | 2016-05-24 | 株式会社東芝 | Manufacturing method of semiconductor device |
US9449986B1 (en) | 2015-10-13 | 2016-09-20 | Samsung Electronics Co., Ltd. | 3-dimensional memory device having peripheral circuit devices having source/drain contacts with different spacings |
KR102450572B1 (en) * | 2015-10-13 | 2022-10-11 | 삼성전자주식회사 | Memory device |
KR102620597B1 (en) | 2016-09-23 | 2024-01-03 | 삼성전자주식회사 | Semiconductor device |
US10522423B2 (en) | 2017-08-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure for fin-like field effect transistor |
GB2570318B (en) | 2018-01-19 | 2022-03-09 | X Fab Semiconductor Foundries Gmbh | Ohmic contacts in semiconductor devices |
US10854518B2 (en) * | 2018-10-30 | 2020-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Configuring different via sizes for bridging risk reduction and performance improvement |
TWI716865B (en) * | 2019-05-06 | 2021-01-21 | 世界先進積體電路股份有限公司 | Semiconductor device structures |
US11264274B2 (en) * | 2019-09-27 | 2022-03-01 | Tokyo Electron Limited | Reverse contact and silicide process for three-dimensional logic devices |
US11476207B2 (en) | 2019-10-23 | 2022-10-18 | Vanguard International Semiconductor Corporation | Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD) |
US11328957B2 (en) * | 2020-02-25 | 2022-05-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11489053B2 (en) | 2020-04-09 | 2022-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method |
KR20210129795A (en) | 2020-04-20 | 2021-10-29 | 삼성전자주식회사 | Semiconductor device |
KR20210130566A (en) | 2020-04-22 | 2021-11-01 | 에스케이하이닉스 주식회사 | Semiconductor memory device having page buffer |
US20220310445A1 (en) * | 2021-03-26 | 2022-09-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor Gate Contacts and Methods of Forming the Same |
CN116805623A (en) * | 2022-03-18 | 2023-09-26 | 联华电子股份有限公司 | Electrostatic discharge protection device |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5192989A (en) * | 1989-11-28 | 1993-03-09 | Nissan Motor Co., Ltd. | Lateral dmos fet device with reduced on resistance |
JPH07131003A (en) | 1993-11-04 | 1995-05-19 | Ricoh Co Ltd | Semiconductor device |
JP2800748B2 (en) | 1995-12-19 | 1998-09-21 | 日本電気株式会社 | Semiconductor device |
TW320773B (en) * | 1996-11-25 | 1997-11-21 | Winbond Electronics Corp | Multi-finger MOS component |
JP3047850B2 (en) * | 1997-03-31 | 2000-06-05 | 日本電気株式会社 | Semiconductor device |
JP4033957B2 (en) | 1997-12-04 | 2008-01-16 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
US5965917A (en) * | 1999-01-04 | 1999-10-12 | Advanced Micro Devices, Inc. | Structure and method of formation of body contacts in SOI MOSFETS to elimate floating body effects |
JP2002050767A (en) * | 2000-08-04 | 2002-02-15 | Mitsubishi Electric Corp | Semiconductor device and its manufacturing method |
GB2374200A (en) | 2000-12-21 | 2002-10-09 | Europ Org For Nuclear Research | Radiation tolerant MOS layout |
JP2003007844A (en) * | 2001-04-09 | 2003-01-10 | Seiko Instruments Inc | Semiconductor device |
JP3997089B2 (en) | 2002-01-10 | 2007-10-24 | 株式会社ルネサステクノロジ | Semiconductor device |
US6573172B1 (en) * | 2002-09-16 | 2003-06-03 | Advanced Micro Devices, Inc. | Methods for improving carrier mobility of PMOS and NMOS devices |
JP4232584B2 (en) * | 2002-10-15 | 2009-03-04 | 株式会社デンソー | Semiconductor device |
JP4396200B2 (en) * | 2002-10-30 | 2010-01-13 | 株式会社デンソー | Semiconductor device |
CN1230891C (en) * | 2003-03-04 | 2005-12-07 | 统宝光电股份有限公司 | Manufacture method of CMOS film transistor module |
US7037764B2 (en) * | 2004-02-26 | 2006-05-02 | Micron Technology, Inc. | Method of forming a contact in a pixel cell |
DE102004020593A1 (en) * | 2004-04-27 | 2005-11-24 | Infineon Technologies Ag | Fin field effect transistor arrangement and method for producing a fin field effect transistor arrangement |
US7227205B2 (en) * | 2004-06-24 | 2007-06-05 | International Business Machines Corporation | Strained-silicon CMOS device and method |
US7161199B2 (en) * | 2004-08-24 | 2007-01-09 | Freescale Semiconductor, Inc. | Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof |
US7265399B2 (en) * | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
US7088000B2 (en) * | 2004-11-10 | 2006-08-08 | International Business Machines Corporation | Method and structure to wire electronic devices |
JP4833544B2 (en) | 2004-12-17 | 2011-12-07 | パナソニック株式会社 | Semiconductor device |
US7768014B2 (en) * | 2005-01-31 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
US8203185B2 (en) * | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
WO2007043128A1 (en) * | 2005-10-03 | 2007-04-19 | Fujitsu Limited | Ferroelectric memory, method of manufacturing the same, and method of manufacturing semiconductor device |
US7888214B2 (en) * | 2005-12-13 | 2011-02-15 | Globalfoundries Singapore Pte. Ltd. | Selective stress relaxation of contact etch stop layer through layout design |
US7750403B2 (en) * | 2006-06-30 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
JP4534164B2 (en) * | 2006-07-25 | 2010-09-01 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor device |
JP2008218564A (en) * | 2007-03-01 | 2008-09-18 | Matsushita Electric Ind Co Ltd | Semiconductor device |
US7935588B2 (en) * | 2007-03-06 | 2011-05-03 | International Business Machines Corporation | Enhanced transistor performance by non-conformal stressed layers |
-
2007
- 2007-04-30 DE DE102007020258.1A patent/DE102007020258B4/en active Active
- 2007-12-26 US US11/964,494 patent/US7964970B2/en active Active
-
2008
- 2008-04-17 JP JP2010506216A patent/JP2010526437A/en active Pending
- 2008-04-17 CN CN200880013012.0A patent/CN101730939B/en active Active
- 2008-04-17 WO PCT/US2008/004958 patent/WO2008133832A1/en active Application Filing
- 2008-04-17 KR KR1020097023007A patent/KR101380880B1/en not_active IP Right Cessation
- 2008-04-23 TW TW097114769A patent/TWI443828B/en not_active IP Right Cessation
-
2009
- 2009-10-15 GB GB0918041A patent/GB2461209A/en not_active Withdrawn
-
2011
- 2011-05-13 US US13/107,515 patent/US8541885B2/en active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107851583A (en) * | 2015-08-21 | 2018-03-27 | 日立汽车***株式会社 | Semiconductor device, semiconductor integrated circuit and load drive device |
CN109728071A (en) * | 2017-10-30 | 2019-05-07 | 台湾积体电路制造股份有限公司 | It is doped with the semiconductor devices of conductive component |
US11450741B2 (en) | 2017-10-30 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Doping for semiconductor device with conductive feature |
US11742386B2 (en) | 2017-10-30 | 2023-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Doping for semiconductor device with conductive feature |
US12015055B2 (en) | 2017-10-30 | 2024-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Doping for semiconductor device with conductive feature |
CN111987090A (en) * | 2019-05-21 | 2020-11-24 | 世界先进积体电路股份有限公司 | Semiconductor device structure |
Also Published As
Publication number | Publication date |
---|---|
US20110215415A1 (en) | 2011-09-08 |
GB2461209A (en) | 2009-12-30 |
TWI443828B (en) | 2014-07-01 |
DE102007020258A1 (en) | 2008-11-06 |
US7964970B2 (en) | 2011-06-21 |
JP2010526437A (en) | 2010-07-29 |
DE102007020258B4 (en) | 2018-06-28 |
GB0918041D0 (en) | 2009-12-02 |
US8541885B2 (en) | 2013-09-24 |
CN101730939B (en) | 2012-09-26 |
US20080265330A1 (en) | 2008-10-30 |
KR101380880B1 (en) | 2014-04-02 |
WO2008133832A1 (en) | 2008-11-06 |
KR20100051588A (en) | 2010-05-17 |
TW200849596A (en) | 2008-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101730939B (en) | A technique for enhancing transistor performance by transistor specific contact design | |
CN108666268B (en) | Method for forming air gap and gate contact over active region of transistor | |
CN101971325B (en) | CMOS device comprising an nmos transistor with recessed drain and source areas and a pmos transistor having a silicon/germanium material in the drain and source areas | |
CN102683192B (en) | Fin-transistor formed on a patterned sti region by late fin etch | |
CN108777257B (en) | Backside source-drain contact for integrated circuit transistor device and method of making same | |
TWI748737B (en) | Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices | |
US6204532B1 (en) | Pillar transistor incorporating a body contact | |
US7153745B2 (en) | Recessed gate transistor structure and method of forming the same | |
JP7427012B2 (en) | Transistor channel with vertically stacked nanosheets connected by fin-shaped bridge regions | |
US20160163583A1 (en) | Isolation scheme for high voltage device | |
CN101304044B (en) | Semiconductor device and method of forming the same | |
JP2001168337A (en) | Soi semiconductor integrated circuit and its manufacturing method | |
US7875550B2 (en) | Method and structure for self-aligned device contacts | |
JPH11274496A (en) | Field-effect transistor having improved implant and its manufacture | |
GB2366449A (en) | Vertical replacement gate (VRG) MOSFET with condutive layer adjacent a source/drain region | |
US20150255338A1 (en) | Distributed Metal Routing | |
US20060244094A1 (en) | Semiconductor device and method of manufacturing the same | |
US20060246656A1 (en) | Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cell | |
US6380589B1 (en) | Semiconductor-on-insulator (SOI) tunneling junction transistor SRAM cell | |
US20070170499A1 (en) | Semiconductor device and manufacturing method thereof | |
US10304839B2 (en) | Metal strap for DRAM/FinFET combination | |
KR102435160B1 (en) | Semiconductor device and manufacturing method thereof | |
US20090078998A1 (en) | Semiconductor device having decreased contact resistance | |
US10079248B2 (en) | Field-effect transistors with a buried body contact | |
US7842575B2 (en) | Vertical MOS transistor device with asymmetrical source and drain and its manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES COMPANY Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20100715 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA STATE, THE USA TO: GRAND CAYMAN, CAYMAN ISLANDS(BRITISH OVERSEAS TERRITORY) |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100715 Address after: Grand Cayman, Cayman Islands Applicant after: Globalfoundries Semiconductor Inc. Address before: American California Applicant before: Advanced Micro Devices Inc. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210407 Address after: Hsinchu City, Taiwan, China Patentee after: Taiwan Semiconductor Manufacturing Co.,Ltd. Address before: Greater Cayman Islands, British Cayman Islands Patentee before: GLOBALFOUNDRIES Inc. |