CN101724344A - 碳化硅基片的抛光液 - Google Patents

碳化硅基片的抛光液 Download PDF

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Publication number
CN101724344A
CN101724344A CN200810155745A CN200810155745A CN101724344A CN 101724344 A CN101724344 A CN 101724344A CN 200810155745 A CN200810155745 A CN 200810155745A CN 200810155745 A CN200810155745 A CN 200810155745A CN 101724344 A CN101724344 A CN 101724344A
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silicon carbide
carbide substrate
polishing
polishing liquid
silicon
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周海
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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本发明涉及光电子领域使用的碳化硅基片加工中抛光液的配方。碳化硅基片抛光液由：颗粒直径为20纳米～50纳米溶胶型二氧化硅(SiO2)，去离子水，氢氧化钠(NaOH)，聚氧乙烯酰胺组成。它们的质量比是：二氧化硅∶去离子水∶氢氧化钠∶聚氧乙烯酰胺＝1∶2∶0.01∶0.06。使用本抛光液进行抛光，不仅能够有效消除碳化硅基片磨削过程中产生的加工损伤层，保证基片抛光面的粗糙度(RMS)＜0.3纳米，同时能够缩短碳化硅基片的抛光时间，降低生产成本。

Description

碳化硅基片的抛光液
所属技术领域
本发明涉及光电子领域使用的碳化硅基片表面加工。
背景技术
碳化硅(SiC)晶体是光电子领域重要的基础材料，它是生产GaN薄膜不可缺少的衬底材料。
质量不好的碳化硅基片，在其上长不出满足发光二极管(LED)所需的GaN薄膜。而碳化硅基片的质量由碳化硅基片的抛光工艺来保证，抛光液的配方和质量是决定碳化硅基片的抛光质量的关键因素。
发明内容
本发明提出一种新的碳化硅基片的抛光液的配方，该抛光液的配方不仅能够提高碳化硅基片的抛光质量，而且能够降低碳化硅基片的加工成本。
碳化硅基片抛光液组成是：颗粒直径为20纳米～50纳米溶胶型二氧化硅(SiO2)，去离子水，氢氧化钠(NaOH)，聚氧乙烯酰胺。它们的质量比是：二氧化硅∶去离子水∶氢氧化钠∶聚氧乙烯酰胺＝1∶2∶0.01∶0.06。
二氧化硅作为抛光材料，它具有较低的硬度，采用近似球状外形的二氧化硅，较小的颗粒直径(20纳米～50纳米)，通过化学机械抛光，从而获得良好的抛光表面。去离子水具有较高的纯度。氢氧化钠是用于对抛光液pH值的调整。聚氧乙烯酰胺作为悬浮剂，能够使得碳化硅基片抛光液长时间放置不沉淀。
发明效果
本发明的有益效果是：使用本抛光液进行抛光，能够有效消除碳化硅基片磨削过程中产生的加工损伤层，保证基片抛光面的粗糙度(RMS)＜0.3纳米，同时使用该抛光液能够缩短碳化硅基片的加工时间，降低生产成本。

Claims (1)

1.碳化硅基片的抛光液组成是：颗粒直径为20纳米～50纳米溶胶型二氧化硅(SiO2)，去离子水，氢氧化钠(NaOH)，聚氧乙烯酰胺。它们的质量比是：二氧化硅∶去离子水∶氢氧化钠∶聚氧乙烯酰胺＝1∶2∶0.01∶0.06。
CN200810155745A 2008-10-14 2008-10-14 碳化硅基片的抛光液 Pending CN101724344A (zh)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
CN104312440A (zh) * 2014-10-28 2015-01-28 清华大学 一种化学机械抛光组合物
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
CN112029417A (zh) * 2020-09-30 2020-12-04 常州时创新材料有限公司 一种用于碳化硅cmp的抛光组合物及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1836842A (zh) * 2006-04-19 2006-09-27 山东大学 大直径高硬度6H－SiC单晶片的表面抛光方法
CN1947944A (zh) * 2006-08-11 2007-04-18 周海 磷化镓晶片纳米级超光滑加工工艺
CN101050338A (zh) * 2007-05-11 2007-10-10 江苏海迅实业有限公司 微晶玻璃加工用纳米二氧化硅磨料抛光液及其制备方法
CN101096577A (zh) * 2006-06-30 2008-01-02 天津晶岭电子材料科技有限公司 一种防冻型抛光液及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1836842A (zh) * 2006-04-19 2006-09-27 山东大学 大直径高硬度6H－SiC单晶片的表面抛光方法
CN101096577A (zh) * 2006-06-30 2008-01-02 天津晶岭电子材料科技有限公司 一种防冻型抛光液及其制备方法
CN1947944A (zh) * 2006-08-11 2007-04-18 周海 磷化镓晶片纳米级超光滑加工工艺
CN101050338A (zh) * 2007-05-11 2007-10-10 江苏海迅实业有限公司 微晶玻璃加工用纳米二氧化硅磨料抛光液及其制备方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9337277B2 (en) 2012-09-11 2016-05-10 Dow Corning Corporation High voltage power semiconductor device on SiC
US9165779B2 (en) 2012-10-26 2015-10-20 Dow Corning Corporation Flat SiC semiconductor substrate
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
US10002760B2 (en) 2014-07-29 2018-06-19 Dow Silicones Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN104312440B (zh) * 2014-10-28 2016-04-27 清华大学 一种化学机械抛光组合物
CN104312440A (zh) * 2014-10-28 2015-01-28 清华大学 一种化学机械抛光组合物
CN112029417A (zh) * 2020-09-30 2020-12-04 常州时创新材料有限公司 一种用于碳化硅cmp的抛光组合物及其制备方法

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Application publication date: 20100609