CN101722694A - High-Tg high-thermal conductivity aluminium-based copper-clad laminate - Google Patents
High-Tg high-thermal conductivity aluminium-based copper-clad laminate Download PDFInfo
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- CN101722694A CN101722694A CN200910234234A CN200910234234A CN101722694A CN 101722694 A CN101722694 A CN 101722694A CN 200910234234 A CN200910234234 A CN 200910234234A CN 200910234234 A CN200910234234 A CN 200910234234A CN 101722694 A CN101722694 A CN 101722694A
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Abstract
The invention discloses a high-Tg high-thermal conductivity aluminium-based copper-clad laminate comprising a copper foil layer and an aluminium-based layer, and an insulating layer is coated between the copper foil layer and the aluminium-based layer. The copper-clad laminate is characterized in that the insulating layer contains the components in percent weight: 55-73 percent of epoxide resin, 0.06-0.20 percent of dimethyl imidazole, 10-22.94 percent of propylene glycol methyl ether and 10-22 percent of stuffing. The aluminium-based copper-clad laminate material has the characteristics of temperature resistance, pressure resistance and big coefficient of heat conductivity and can well satisfy the requirements of high-power aluminium-based copper plates.
Description
Technical field
The present invention relates to a kind of aluminium base copper clad laminate, especially relate to a kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate.
Background technology
Aluminium-based copper-clad laminate has good heat-conducting, electrical insulation properties and machining property, therefore be widely used in fields such as automotive electronics, computer equipment, communication electronic product, power supply, Electronic Control and led circuit plate, and its traditional processing procedure is: hot-forming with the folded book of aluminium sheet, glass cloth half adhesive sheet (insulating barrier) and three kinds of materials of Copper Foil, the defective of the aluminium-based copper-clad laminate that this kind method is worth is big, the poor radiation of the thermal resistance of glass cloth, is difficult to satisfy the requirement of high-power, high heat radiation product.
Summary of the invention
In order to overcome the deficiencies in the prior art, the object of the present invention is to provide a kind ofly to have heatproof, withstand voltage, characteristics that thermal conductivity factor is big, and can satisfy the high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate of the demand of high-power aluminum-based circuit board.
The present invention is achieved through the following technical solutions:
A kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate, comprise copper pool layer and aluminum base layer, scribble insulating barrier between copper pool layer and the aluminum base layer, it is characterized in that: the composition of described insulating barrier comprises epoxy resin, methylimidazole, propylene glycol monomethyl ether and filler, and wherein each quality percentage composition of forming is:
Epoxy resin 55～73%;
Methylimidazole 0.06～0.20%;
Propylene glycol monomethyl ether 10～22.94%;
Filler 10～22%.
Above-mentioned epoxy resin is a kind of epoxy resin of the two component systems of polyfunctional group of bromination, and wherein, two components of described epoxy resin are component A and B component, and wherein the mass percent between component A and the B component is: 1: 0.45～0.56.
The outward appearance of above-mentioned component A is buff or pale brown look liquid, and epoxide equivalent is 200～220g/eq, and solids content is 82 ± 1wt%, and bromine content is 0, and viscosity is 2000～3000; The outward appearance of described B component is light yellow, and epoxide equivalent is 0, and solids content is 62 ± 1wt%, and bromine content is 33.5 ± 0.5, and viscosity is 100～200.
Above-mentioned filler is any one or more the combination in silicon powder, boron nitride and the ceramic powder, described silicon powder, boron nitride and the ceramic powder mass ratio in filler is: with whole fillers is 1, then silicon powder is 0～1.0, boron nitride is 0～0.3, ceramic powder is 0～1.0, and preferred silicon powder is 0.3～0.5, and boron nitride is 0～0.3, and ceramic powder is 0.3～0.5.
The invention has the beneficial effects as follows: aluminium base copper-clad plate of the present invention is compared as follows with the insulating layer material performance with insulating layer material and the aluminium base copper-clad plate of existing plain edition:
As can be seen from the above table: aluminium base copper-clad plate of the present invention has heatproof, withstand voltage, characteristics that thermal conductivity factor is big with insulating layer material, and it can satisfy the demand of high-power aluminium base copper-clad plate well.
The specific embodiment
Below in conjunction with specific embodiment, describe the specific embodiment of the present invention in detail:
A kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate, comprise copper pool layer and aluminum base layer, scribble insulating barrier between copper pool layer and the aluminum base layer, the composition of described insulating barrier comprises epoxy resin, methylimidazole, propylene glycol monomethyl ether and filler, and wherein each quality percentage composition of forming is: epoxy resin 55～73%; Methylimidazole 0.06～0.20%; Propylene glycol monomethyl ether 10～22.94%; Filler 10～22%.
Above-mentioned epoxy resin is a kind of epoxy resin of the two component systems of polyfunctional group of bromination, wherein, two components of described epoxy resin are component A and B component, wherein the mass percent between component A and the B component is: 1: 0.45～0.56, and the outward appearance of component A is buff or pale brown look liquid, and epoxide equivalent is 200～220g/eq, and solids content is 82 ± 1wt%, bromine content is 0, and viscosity is 2000～3000; The outward appearance of described B component is light yellow, and epoxide equivalent is 0, and solids content is 62 ± 1wt%, and bromine content is 33.5 ± 0.5, and viscosity is 100～200.
And above-mentioned filler is any one or more the combination in silicon powder, boron nitride and the ceramic powder, wherein silicon powder, boron nitride and the ceramic powder mass ratio in filler is: with whole fillers is 1, then silicon powder is 0～1.0, boron nitride is 0～0.3, ceramic powder is 0～1.0, and preferred silicon powder is 0.3～0.5, and boron nitride is 0～0.3, and ceramic powder is 0.3～0.5.
Embodiment 1:
A kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate, comprise epoxy resin, methylimidazole, propylene glycol monomethyl ether and filler, wherein each quality percentage composition of forming is: epoxy resin 55.00%, methylimidazole 0.06%, propylene glycol monomethyl ether 22.94%, filler 22.00%, and epoxy resin comprises component A and B component, wherein, the mass percent of component A and B component is 1: 0.45, and filler is 100% silicon powder.
Embodiment 2:
A kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate, comprise epoxy resin, methylimidazole, propylene glycol monomethyl ether and filler, wherein each quality percentage composition of forming is: epoxy resin 73.00%, methylimidazole 0.20%, propylene glycol monomethyl ether 10.00%, filler 17.80%, and epoxy resin comprises component A and B component, wherein, the mass percent of component A and B component is 1: 0.50, and filler is the mixture of silicon powder and boron nitride, and the mass percent of silicon powder and boron nitride is 0.7: 0.3.
Embodiment 3:
A kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate, comprise epoxy resin, methylimidazole, propylene glycol monomethyl ether and filler, wherein each quality percentage composition of forming is: epoxy resin 73.00%, methylimidazole 0.13%, propylene glycol monomethyl ether 16.87%, filler 10.00%, and epoxy resin comprises component A and B component, wherein, the mass percent of component A and B component is 1: 0.46, and filler is the mixed zone of silicon powder, boron nitride and ceramic powder, and the mass percent of each component is: 0.3: 0.2: 0.5.
Embodiment 4:
A kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate, comprise epoxy resin, methylimidazole, propylene glycol monomethyl ether and filler, wherein each quality percentage composition of forming is: epoxy resin 64.00%, methylimidazole 0.10%, propylene glycol monomethyl ether 19.80%, filler 16.10%, and epoxy resin comprises component A and B component, wherein, the mass percent of component A and B component is 1: 0.56, and filler is 100% ceramic powder.
Below disclose the present invention with preferred embodiment, so it is not in order to restriction the present invention, and all employings are equal to replaces or technical scheme that the equivalent transformation mode is obtained, all drops within protection scope of the present invention.
Claims (7)
1. high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate, comprise copper pool layer and aluminum base layer, scribble insulating barrier between copper pool layer and the aluminum base layer, it is characterized in that: the composition of described insulating barrier comprises epoxy resin, methylimidazole, propylene glycol monomethyl ether and filler, and wherein each quality percentage composition of forming is:
Epoxy resin 55～73%;
Methylimidazole 0.06～0.20%;
Propylene glycol monomethyl ether 10～22.94%;
Filler 10～22%.
2. a kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate according to claim 1 is characterized in that: described epoxy resin is a kind of epoxy resin of the two component systems of polyfunctional group of bromination.
3. a kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate according to claim 2 is characterized in that: two components of described epoxy resin are component A and B component, and wherein the mass percent between component A and the B component is: 1: 0.45～0.56.
4. a kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate according to claim 2, it is characterized in that: the outward appearance of described component A is buff or pale brown look liquid, and epoxide equivalent is 200～220g/eq, and solids content is 82 ± 1wt%, bromine content is 0, and viscosity is 2000～3000; The outward appearance of described B component is light yellow, and epoxide equivalent is 0, and solids content is 62 ± 1wt%, and bromine content is 33.5 ± 0.5, and viscosity is 100～200.
5. a kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate according to claim 1 is characterized in that: described filler is any one or more the combination in silicon powder, boron nitride and the ceramic powder.
6. a kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate according to claim 1, it is characterized in that: described silicon powder, boron nitride and the ceramic powder mass ratio in filler is: with whole fillers is 1, then silicon powder is 0～1.0, and boron nitride is 0～0.3, and ceramic powder is 0～1.0.
7. a kind of high-Tg high-thermal conductivity aluminium-based copper-clad pressing plate according to claim 7, it is characterized in that: described silicon powder, boron nitride and the ceramic powder mass ratio in filler is: with whole fillers is 1, then silicon powder is 0.3～0.5, boron nitride is 0～0.3, and ceramic powder is 0.3～0.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910234234A CN101722694A (en) | 2009-11-17 | 2009-11-17 | High-Tg high-thermal conductivity aluminium-based copper-clad laminate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910234234A CN101722694A (en) | 2009-11-17 | 2009-11-17 | High-Tg high-thermal conductivity aluminium-based copper-clad laminate |
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| CN101722694A true CN101722694A (en) | 2010-06-09 |
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| CN200910234234A Pending CN101722694A (en) | 2009-11-17 | 2009-11-17 | High-Tg high-thermal conductivity aluminium-based copper-clad laminate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290504A (en) * | 2011-09-07 | 2011-12-21 | 惠州市西顿工业发展有限公司 | Chip-on-board (COB) packaged light-emitting diode (LED) module based on high-thermal-conductivity substrate flip-chip bonding technique and production method |
| CN111065203A (en) * | 2020-01-06 | 2020-04-24 | 东莞市五株电子科技有限公司 | High-end LED circuit board with good heat dissipation performance and preparation method thereof |
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2009
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| EP1142953A1 (en) * | 1998-12-24 | 2001-10-10 | Hitachi Chemical Company, Ltd. | Cyanate-epoxy resin composition, and prepreg, metal foil-laminated plate and printed wiring board using the same |
| TWI236969B (en) * | 2000-03-03 | 2005-08-01 | Hitachi Chemical Co Ltd | Method for making a prepreg, prepreg, metal clapped laminate, and printed circuit board |
| CN1425034A (en) * | 2000-03-31 | 2003-06-18 | 日立化成工业株式会社 | Process for producing novel silicone polymer, silicone polymer produced by the process, thermosetting resin composition resin film, metal foil with insulating. material, insulating film with metal |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102290504A (en) * | 2011-09-07 | 2011-12-21 | 惠州市西顿工业发展有限公司 | Chip-on-board (COB) packaged light-emitting diode (LED) module based on high-thermal-conductivity substrate flip-chip bonding technique and production method |
| CN102290504B (en) * | 2011-09-07 | 2014-04-16 | 惠州市西顿工业发展有限公司 | Chip-on-board (COB) packaged light-emitting diode (LED) module based on high-thermal-conductivity substrate flip-chip bonding technique and production method |
| CN111065203A (en) * | 2020-01-06 | 2020-04-24 | 东莞市五株电子科技有限公司 | High-end LED circuit board with good heat dissipation performance and preparation method thereof |
| CN111065203B (en) * | 2020-01-06 | 2022-04-26 | 东莞市五株电子科技有限公司 | High-end LED circuit board with good heat dissipation performance and preparation method thereof |
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Application publication date: 20100609 |