CN101719625A - High repetition frequency narrow pulse width semiconductor pumping green laser - Google Patents
High repetition frequency narrow pulse width semiconductor pumping green laser Download PDFInfo
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- CN101719625A CN101719625A CN200910250019A CN200910250019A CN101719625A CN 101719625 A CN101719625 A CN 101719625A CN 200910250019 A CN200910250019 A CN 200910250019A CN 200910250019 A CN200910250019 A CN 200910250019A CN 101719625 A CN101719625 A CN 101719625A
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CN2009102500190A CN101719625B (en) | 2009-12-01 | 2009-12-01 | High repetition frequency narrow pulse width semiconductor pumping green laser |
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CN2009102500190A CN101719625B (en) | 2009-12-01 | 2009-12-01 | High repetition frequency narrow pulse width semiconductor pumping green laser |
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CN101719625A true CN101719625A (en) | 2010-06-02 |
CN101719625B CN101719625B (en) | 2011-07-27 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102842842A (en) * | 2012-09-25 | 2012-12-26 | 哈尔滨工业大学 | High-power narrow-linewidth 1.94mum Tm: YLF (Yttrium Lithium Fluoride) laser |
CN103050881A (en) * | 2012-09-25 | 2013-04-17 | 武汉立德激光有限公司 | YAG (Yttrium Aluminum Garnet) green laser for semiconductor double-end-face pump with high monopulse peak power and high repetition frequency |
CN104201554A (en) * | 2014-09-16 | 2014-12-10 | 哈尔滨工业大学 | 1.6 micron active-switching Q pulse laser device based on Er : YAG ceramic material |
CN105720476A (en) * | 2016-04-18 | 2016-06-29 | 长春理工大学 | High peak narrow pulse laser based on sudden rise of laser gain |
CN106025777A (en) * | 2016-08-01 | 2016-10-12 | 苏州艾思兰光电有限公司 | Laser path system of semiconductor pumping laser cleaning machine |
CN117277038A (en) * | 2023-11-21 | 2023-12-22 | 武汉光谷航天三江激光产业技术研究院有限公司 | Single-end pumping airborne pulse laser based on double-crystal serial connection and control method |
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2009
- 2009-12-01 CN CN2009102500190A patent/CN101719625B/en active Active
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102842842A (en) * | 2012-09-25 | 2012-12-26 | 哈尔滨工业大学 | High-power narrow-linewidth 1.94mum Tm: YLF (Yttrium Lithium Fluoride) laser |
CN103050881A (en) * | 2012-09-25 | 2013-04-17 | 武汉立德激光有限公司 | YAG (Yttrium Aluminum Garnet) green laser for semiconductor double-end-face pump with high monopulse peak power and high repetition frequency |
CN102842842B (en) * | 2012-09-25 | 2014-06-04 | 哈尔滨工业大学 | High-power narrow-linewidth 1.94mum Tm: YLF (Yttrium Lithium Fluoride) laser |
CN103050881B (en) * | 2012-09-25 | 2015-08-26 | 武汉立德激光有限公司 | The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency |
CN104201554A (en) * | 2014-09-16 | 2014-12-10 | 哈尔滨工业大学 | 1.6 micron active-switching Q pulse laser device based on Er : YAG ceramic material |
CN105720476A (en) * | 2016-04-18 | 2016-06-29 | 长春理工大学 | High peak narrow pulse laser based on sudden rise of laser gain |
CN105720476B (en) * | 2016-04-18 | 2018-11-06 | 长春理工大学 | The peak value narrow pulse laser to be jumped based on laser gain |
CN106025777A (en) * | 2016-08-01 | 2016-10-12 | 苏州艾思兰光电有限公司 | Laser path system of semiconductor pumping laser cleaning machine |
CN106025777B (en) * | 2016-08-01 | 2019-02-05 | 苏州艾思兰光电有限公司 | A kind of laser light path system of semiconductor pumped laser cleaning machine |
CN117277038A (en) * | 2023-11-21 | 2023-12-22 | 武汉光谷航天三江激光产业技术研究院有限公司 | Single-end pumping airborne pulse laser based on double-crystal serial connection and control method |
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CN101719625B (en) | 2011-07-27 |
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Owner name: SHENZHEN HUAGONG LASER EQUIPMENT CO., LTD. Free format text: FORMER OWNER: HUAGONG LASER ENGINEERING CO LTD, WUHAN Effective date: 20120316 |
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Effective date of registration: 20120316 Address after: 518074, No. 10, building 3, block A, Tian An Digital City, Longgang Central District, Longgang District, Shenzhen, 1002 Patentee after: SHENZHEN HUAGONG LASER EQUIPMENT CO., LTD. Address before: 430223 Hubei city of Wuhan province Huazhong University of Science and Technology science and Technology Park of East Lake high tech Development Zone Science and Technology Industrial Park laser Patentee before: Huagong Laser Engineering Co., Ltd., Wuhan |
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Address after: Room a1002, 10 / F, building a, building 3, Longgang Tian'an Digital Innovation Park, intersection of Qinglin West Road and Huangge North Road, Longcheng street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Huagong new energy equipment Co.,Ltd. Address before: No. 1002, floor 10, block a, building 3, Tian'an Digital City, Longgang central city, Longgang District, Shenzhen Patentee before: SHENZHEN HUAGONG LASER EQUIPMENT Co.,Ltd. |
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