CN101710612A - Organic electroluminescent device - Google Patents
Organic electroluminescent device Download PDFInfo
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- CN101710612A CN101710612A CN200910238027A CN200910238027A CN101710612A CN 101710612 A CN101710612 A CN 101710612A CN 200910238027 A CN200910238027 A CN 200910238027A CN 200910238027 A CN200910238027 A CN 200910238027A CN 101710612 A CN101710612 A CN 101710612A
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Abstract
The invention discloses an organic electroluminescent device, which comprises a substrate, an anode layer formed on the substrate, an organic functional layer formed on the anode layer and cathode layers formed on the organic functional layer, wherein the cathode layers at least comprise a first cathode layer, a second cathode layer and a third cathode layer. A composite cathode of the organic electroluminescent device utilizes alkali metal and an alkaline earth alloy layer to reduce an electron injection potential barrier to improve the efficiency of electron injection obviously.
Description
Technical field
The present invention relates to the organic electroluminescence device field, relate in particular to a kind of organic electroluminescence device that improves cathode layer.
Background technology
As far back as the fifties, people such as Bernanose.A have just begun the research of organic electroluminescence device (OLED).The material of original research is the anthracene single crystal sheet. owing to there is the too thick problem of single-chip thickness (10-20 μ m), required driving voltage is up to several hectovolts.Nineteen eighty-two Vinceet has made the thick anthracene film of 50nm with vacuum vapour deposition, observed blue-fluorescence under 30 volts of voltages, but its external quantum efficiency has only 0.03%.Early stage organic electroluminescent is paced up and down on the level of high voltage, low-light level, poor efficiency.Deng Qingyun (C.W.Tang) and Vanslyke up to U.S. Eastman Kodak company in 1987 have reported that structure is: ITO/Diamine/Alq
3The brightness under 10 volts operating voltage of the electroluminous organic small molecular device of/Mg:Ag, device reaches 1000cd/m
2, external quantum efficiency reaches 1.0%, has caused the extensive concern of scientists.And then nineteen ninety univ cambridge uk J.H.Burroughes group on Nature reported first conjugated polymer PPV also can realize electroluminescent message, they adopt spin coating get rid of film the method success preparation structure be ITO/PPV/Ca polymer organic luminescent device, obtained 0.05% external quantum efficiency.People have seen the possibility that organic electroluminescence device is applied to show from above report, have from then on opened the prelude of research of organic molecule and polymer electroluminescence and industrialization.
Generally research is thought, in the light-emitting zone of OLED device, the content of hole and electronics is not enough coupling, and the hole is more than electronics often.So Many researchers all is being devoted to the improvement that electronics injects and transmits.From early stage Mg:Ag negative electrode, the LiF/Al that generally adopts of industry finally, the injectability of electronics has obtained effective lifting.But, continuous development and progress along with the luminous organic material system, and the new expansion of OLED application, brightness, efficient and power consumption for device have had new requirement, the ability of injecting for cathode electronics also has higher requirement, also just need the researcher constantly to drop into exploitation strength for the design of cathode construction and the selection of material, find the more negative electrode of efficient stable.
Summary of the invention
The object of the present invention is to provide and a kind ofly can effectively improve device electronics injectability, make the organic electroluminescence device that the device luminous efficiency is significantly improved.
The objective of the invention is to be achieved by the following technical programs: the present invention's organic electroluminescence device, comprise substrate, the anode layer that on substrate, forms, the organic function layer that on anode layer, forms, the cathode layer that on organic function layer, forms, cathode layer comprises three layers of first cathode layer, second cathode layer and the 3rd cathode layers at least, first cathode layer comprises a kind of alkali metal or its compound at least, second cathode layer comprises a kind of alkali earth metal at least or contains the alloy of this kind element, and the 3rd cathode layer is metal level silver or aluminium.
Above-mentioned first cathode layer is formed on the organic function layer.
The alkali metal that above-mentioned first cathode layer comprises is selected from Li, Na, K, Cs, Rb.
The alkali metal compound that above-mentioned first cathode layer comprises is selected from alkali metal nitride, alkali halide, alkali metal oxide or alkali metal salt, specifically is selected from LiF, Li
3N, Li
2CoO
2, LiBH, NaF, NaCl, KBH
4, KF, CsCO
3, CsF, CsCl, Rb
2O.
Above-mentioned first cathode layer also comprises a kind of alkali earth metal.
Above-mentioned first cathode layer is the alloy of Li and Mg, Li and Ca, Cs and Mg or Cs and Ca, and wherein the shared mass percent of alkali earth metal is 5%～50%.
The thickness of above-mentioned first cathode layer is 0.1～50nm, and preferred thickness is 0.5～20nm.
Second cathode layer is formed on first cathode layer.
The alkaline-earth metal that above-mentioned second cathode layer comprises is selected from Mg, Ca, Sr.
The alloy of the alkaline including earth metal that above-mentioned second cathode layer comprises is selected from the alloy of Mg and Ag, Ca and Ag, Sr and Ag, Mg and Li, Mg and Al or Ca and Li, and wherein alkali earth metal shared mass percent in this layer is 50%～95%.
The above-mentioned second cathode layer thickness is 10～300nm.
The 3rd cathode layer is formed on second cathode layer.
The thickness of the 3rd cathode layer is 20～300nm.
The technical solution of the present invention mechanism explain: technical solution of the present invention prepares composite cathode layer on organic function layer, i.e. ITO/ organic function layer/first cathode layer/second cathode layer/the 3rd cathode layer.Wherein, first cathode layer comprises a kind of alkali metal or its compound at least, covers the organic functions laminar surface, and fully contacts with follow-up second cathode layer, acts synergistically.Second cathode layer comprises a kind of alkali earth metal at least or contains the alloy of this kind element, and alkaline-earth metal can be had an effect with the alkali metal of first cathode layer, forms the alloy of alkali metal and alkaline-earth metal.Alkali metal and alkaline-earth metal belong to the active metal of low work content, the electron cloud of the two can interact in formed alloy system, make the distribution of electronic state that corresponding change take place, can reduce electronics injects organic layer from negative electrode potential barrier, simultaneously, in the preferred version of second cathode layer, select the bigger metal of work content, utilize higher thermal stability of this kind metal and chemical stability, sufficiently high heat is provided in film deposition process, to help the reaction of the alkaline-earth metal and first cathode layer, strengthen the film forming ability and the air stability of whole negative electrode.The interaction of first cathode layer and second cathode layer forms alloy, effectively improves the electronics injectability, reduces driving voltage, thereby helps regulating and control carrier balance in the OLED device, improves the device luminous efficiency.The 3rd cathode layer has been selected film forming is better, stability is higher Ag or Al for use; can isolate of the negative effect of minor amount of water oxygen to alkali metal and alkaline-earth metal; increase the chemistry and the physical stability of cathode construction of the present invention, play the effect of protection, thereby guarantee the life-span of device.
Description of drawings
Fig. 1 is a device architecture schematic diagram of the present invention;
Fig. 2 is a Comparative Examples device architecture schematic diagram of the present invention;
Fig. 3 is the brightness-voltage relationship figure of different components contrast;
Fig. 4 is the current efficiency-current density graph of a relation of different components contrast;
Among the figure: 10,210-substrate, 20, the 220-anode layer, 30, the 230-hole transmission layer, 40, the 240-luminescent layer, 50,250-first cathode layer, 60,260-second cathode layer, 70-the 3rd cathode layer.
Embodiment
The present invention will be further described below in conjunction with drawings and Examples.
Embodiment 1
Fig. 1 is the section of structure of present embodiment organic electroluminescence device, comprises substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the present embodiment:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/Li
3N (1nm)/Mg:Ag (100nm, 10%)/Ag (80nm)
Preparation process:
(1) preparation of organic luminous layer
Preparation has ITO (tin indium oxide) film to do anode on the glass substrate, and the square resistance of ITO film is 50 Ω, and thickness is 150nm.The glass substrate for preparing anode is placed in the vacuum chamber, be evacuated to 1 * 10
-3Pa, evaporation hole mobile material NPB, the evaporation speed of material film is 0.1nm/s, thickness is 50nm; On hole transmission layer, the Alq that evaporation 50nm is thick
3Do the luminescent layer and the electron transfer layer of device.
(2) preparation of cathode layer
The thick Li of evaporation 1nm on luminescent layer
3N is as first cathode layer of device, and its evaporation speed is 0.01nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Mg and Ag is steamed the second thick cathode layer of formation 100nm altogether with 9: 1 mixed.
The 3rd cathode layer is made up of the thick Ag film of 80nm, and Ag layer evaporation speed is 1.0nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 2
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/CsCO
3(2nm)/Mg:Al (300nm, 20%)/Al (50nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The CsCO of evaporation 2nm on luminescent layer
3As first cathode layer of device, its evaporation speed is 0.05nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Mg and Al is steamed the second thick cathode layer of formation 300nm altogether with 8: 2 mixed.
The 3rd cathode layer is made up of the thick Al film of 50nm, and Al layer evaporation speed is 10～12nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 3
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/KBH
4(0.5nm)/Mg:Ag (50nm, 5%)/Ag (150nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The KBH of evaporation 0.5nm on luminescent layer
4As first cathode layer of device, its evaporation speed is 0.05nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Mg and Ag is steamed the second thick cathode layer of formation 50nm altogether with 19: 1 mixed.
The 3rd cathode layer is made up of the thick Ag film of 150nm, and Ag layer evaporation speed is 1.0nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 4
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/CsCl (4nm)/Ca:Ag (100nm, 50%)/Ag (150nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The CsCl of evaporation 4nm is as first cathode layer of device on luminescent layer, and its evaporation speed is 0.02nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Ca and Ag is steamed the second thick cathode layer of formation 100nm altogether with 1: 1 mixed.
The 3rd cathode layer is made up of the thick Ag film of 150nm, and Ag layer evaporation speed is 1.0nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 5
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/Rb
2O (0.1nm)/Sr:Ag (100nm, 50%)/Al (50nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The Rb of evaporation 0.1nm on luminescent layer
2O is as first cathode layer of device, and its evaporation speed is 0.05nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Sr and Ag is steamed the second thick cathode layer of formation 100nm altogether with 1: 1 mixed.
The 3rd cathode layer is made up of the thick Al film of 50nm, and Al layer evaporation speed is 10～12nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 6
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/LiF (0.5nm)/Cs:Ca (200nm, 50%)/Al (20nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The LiF of evaporation 0.5nm is as first cathode layer of device on luminescent layer, and its evaporation speed is 0.05nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Cs and Ca is steamed the second thick cathode layer of formation 200nm altogether with 1: 1 mixed.
The 3rd cathode layer is made up of the thick Al film of 20nm, and Al layer evaporation speed is 10～12nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 7
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/Li
2CoO
2(10nm)/Sr:Ag (200nm, 50%)/Al (50nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The Li of evaporation 10nm on luminescent layer
2CoO
2As first cathode layer of device, its evaporation speed is 0.05nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Sr and Ag is steamed the second thick cathode layer of formation 200nm altogether with 1: 1 mixed.
The 3rd cathode layer is made up of the thick Al film of 50nm, and Al layer evaporation speed is 10～12nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 8
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/LiBH
4(20nm)/Li:Ca (10nm, 50%)/Al (300nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The LiBH of evaporation 20nm on luminescent layer
4As first cathode layer of device, its evaporation speed is 0.05nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Li and Ca is steamed the second thick cathode layer of formation 10nm altogether with 1: 1 mixed.
The 3rd cathode layer is made up of the thick Al film of 300nm, and Al layer evaporation speed is 10～12nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 9
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/NaF (15nm)/Mg:Ag (10nm, 50%)/Ag (100nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The NaF of evaporation 15nm is as first cathode layer of device on luminescent layer, and its evaporation speed is 0.01nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Mg and Ag is steamed the second thick cathode layer of formation 10nm altogether with 1: 1 mixed.
The 3rd cathode layer is made up of the thick Ag film of 100nm, and Ag layer evaporation speed is 1.0nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/KF (30nm)/Ca:Ag (50nm, 50%)/Al (200nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The KF of evaporation 30nm is as first cathode layer of device on luminescent layer, and its evaporation speed is 0.02nm/s;
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Ca and Ag is steamed the second thick cathode layer of formation 50nm altogether with 1: 1 mixed.
The 3rd cathode layer is made up of the thick Al film of 200nm, and Al layer evaporation speed is 10～12nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 11
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/Li:Mg (40nm, 20%)/Li:Mg (60nm, 80%)/Ag (50nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
On luminescent layer, adopt the evaporation mode to prepare first cathode layer, the mixture of Li and Mg is steamed the first thick cathode layer of formation 40nm altogether with 4: 1 mixed.
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Li and Mg is steamed the second thick cathode layer of formation 60nm altogether with 1: 4 mixed.
The 3rd cathode layer is made up of the thick Ag film of 50nm, and Ag layer evaporation speed is 1.0nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 12
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/Cs:Mg (20nm, 50%)/Li:Ca (80nm, 95%)/Al (200nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
On luminescent layer, adopt the evaporation mode to prepare first cathode layer, the mixture of Cs and Mg is steamed the first thick cathode layer of formation 20nm altogether with 1: 1 mixed.
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Li and Ca is steamed the second thick cathode layer of formation 80nm altogether with 1: 19 mixed.
The 3rd cathode layer is made up of the thick Al film of 200nm, and Al layer evaporation speed is 10～12nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 13
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/Li:Ca (10nm, 20%)/Li:Mg (100nm, 80%)/Ag (50nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
On luminescent layer, adopt the evaporation mode to prepare first cathode layer, the mixture of Li and Ca is steamed the first thick cathode layer of formation 10nm altogether with 4: 1 mixed.
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Li and Mg is steamed the second thick cathode layer of formation 100nm altogether with 1: 4 mixed.
The 3rd cathode layer is made up of the thick Ag film of 50nm, and Ag layer evaporation speed is 1.0nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Embodiment 14
The section of structure of present embodiment organic electroluminescence device as shown in Figure 1, wherein substrate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, the first cathode layers 50, second cathode layer 60 and the 3rd cathode layer 70.The device architecture of organic electroluminescence device is as follows in the embodiment of the invention:
ITO/NPB(50nm)/Alq
3(50nm)/Cs:Ca(50nm，20％)/Li:Mg(200nm，80％)/Ag(100nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
On luminescent layer, adopt the evaporation mode to prepare first cathode layer, the mixture of Cs and Ca is steamed the first thick cathode layer of formation 50nm altogether with 4: 1 mixed.
After first cathode layer is finished in preparation, adopt the evaporation mode to prepare second cathode layer, the mixture of Li and Mg is steamed the second thick cathode layer of formation 200nm altogether with 1: 4 mixed.
The 3rd cathode layer is made up of the thick Ag film of 100nm, and Ag layer evaporation speed is 1.0nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Comparative Examples 1
Fig. 2 is the section of structure of this Comparative Examples organic electroluminescence device, and wherein substrate 210, anode layer 220, hole transmission layer 230, luminescent layer 240, the first cathode layers 250 and second cathode layer 260.The device architecture of organic electroluminescence device is as follows in this Comparative Examples:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/LiF (0.5nm)/Al (150nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
The LiF of evaporation 0.5nm is as first cathode layer of device on luminescent layer, and its evaporation speed is 0.05nm/s;
Second cathode layer is made up of the thick Al film of 150nm, and Al layer evaporation speed is 10～12nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
Comparative Examples 2
The section of structure of this Comparative Examples organic electroluminescence device as shown in Figure 2, wherein substrate 210, anode layer 220, hole transmission layer 230, luminescent layer 240, the first cathode layers 250 and second cathode layer 260.The device architecture of organic electroluminescence device is as follows in this Comparative Examples:
Glass substrate/ITO/NPB (50nm)/Alq
3(50nm)/Mg:Ag (100nm, 10%)/Ag (50nm)
Preparation process:
(1) preparation of organic luminous layer: with embodiment 1 preparation process (1).
(2) preparation of cathode layer
Preparation first cathode layer on luminescent layer steams the first thick cathode layer of formation 100nm with the mixture of Mg and Ag altogether with 9: 1 mixed.
Second cathode layer is made up of the thick Ag film of 50nm, and Ag layer evaporation speed is 1.0nm/s.
(3) use the glass packaging sheet with above-mentioned device package.
The performance of embodiment 1-14 and Comparative Examples 1,2 is as shown in table 1:
Table 1
| Device | Cathode construction | Brightness (cd/m2) @8V | Efficient (cd/A) @8V |
| Embodiment 1 | ??Li 3N(1nm)/Mg:Ag(100nm，10％)/Ag(80nm) | ??6500 | ??3.2 |
| Embodiment 2 | ??CsCO 3(2nm)/Mg:Al(300nm，20％)/Al(50nm) | ??15790 | ??3.4 |
| Embodiment 3 | ??KBH 4(0.5nm)/Mg:Ag(50nm，5％)/Ag(150nm) | ??16100 | ??3.4 |
| Device | Cathode construction | Brightness (cd/m2) @8V | Efficient (cd/A) @8V |
| Embodiment 4 | ??CsCl(4nm)/Ca:Ag(100nm，50％)/Ag(150nm) | ??25000 | ??3.0 |
| Embodiment 5 | ??Rb 2O(0.1nm)/Sr:Ag(100nm，50％)/Ag(50nm) | ??30110 | ??3.5 |
| Embodiment 6 | ??LiF(0.5nm)/Cs:Ca(200nm，50％)/Al(20nm) | ??22400 | ??3.0 |
| Embodiment 7 | ??Li 2CoO 2(10nm)/Sr:Ag(200nm，50％)/Al(50nm) | ??26500 | ??3.1 |
| Embodiment 8 | ??LiBH 4(20nm)/Li:Ca(10nm，50％)/Al(300nm) | ??29980 | ??3.4 |
| Embodiment 9 | ??NaF(15nm)/Mg:Ag(10nm，50％)/Ag(100nm) | ??28600 | ??3.2 |
| Embodiment 10 | ??KF(30nm)/Ca:Ag(50nm，50％)/Al(200nm) | ??28100 | ??3.1 |
| Embodiment 11 | ??Li:Mg(40nm，20％)/Li:Mg(60nm，80％)/Ag(50nm) | ??35050 | ??4.6 |
| Embodiment 12 | ??Cs:Mg(20nm，50％)/Li:Ca(80nm，95％)/Al(200nm) | ??29110 | ??3.2 |
| Embodiment 13 | ??Li:Ca(10nm，20％)/Li:Mg(100nm，80％)/Ag(50nm) | ??31540 | ??4.2 |
| Embodiment 14 | ??Cs:Ca(50nm，20％)/Li:Mg(200nm，80％)/Ag(100nm) | ??34980 | ??4.5 |
| Comparative Examples 1 | ??LiF(0.5nm)/Al(150nm) | ??6350 | ??3.0 |
| Comparative Examples 2 | ??Mg:Ag(100nm，10％)/Ag(50nm) | ??2523 | ??2.1 |
Performance parameter by last table embodiment and Comparative Examples more as can be known, first cathode layer of embodiment 1-10 is an alkali metal compound, second cathode layer is the alloy-layer that contains alkaline-earth metal, and obtained device is depressed in same electrical, and brightness and the efficient all height than Comparative Examples are a lot.First cathode layer of embodiment 11-14 and second cathode layer all are alkali metal and alkaline earth metal alloy, from the experimental data result, the efficient of embodiment 11-14 is all considerably beyond the device efficiency of traditional cathode construction, and brightness is generally higher under the same voltage, illustrates that driving voltage is significantly improved.Above description of test, alkali metal of the present invention and alkaline earth metal alloy layer have clearly effect for improving electron injection efficiency, and the thought that composite cathode of the present invention utilizes the alloy of alkali metal and alkaline-earth metal to reduce the electronics injection barrier is effective.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; anyly be familiar with this technology personage; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations; therefore, protection scope of the present invention is as the criterion when the claim with application defines.
Claims (17)
1. organic electroluminescence device, comprise substrate, the anode layer that on substrate, forms, the organic function layer that on anode layer, forms, the cathode layer that on organic function layer, forms, it is characterized in that, described cathode layer comprises three layers of first cathode layer, second cathode layer and the 3rd cathode layers at least, described first cathode layer comprises a kind of alkali metal or its compound at least, described second cathode layer comprises a kind of alkali earth metal at least or contains the alloy of this kind element, and described the 3rd cathode layer is metal level silver or aluminium.
2. organic electroluminescence device according to claim 1 is characterized in that, described first cathode layer is formed on the organic function layer.
3. organic electroluminescence device according to claim 1 is characterized in that, the alkali metal that described first cathode layer comprises is selected from Li, Na, K, Cs, Rb.
4. organic electroluminescence device according to claim 1 is characterized in that, the alkali metal compound that described first cathode layer comprises is selected from alkali metal nitride, alkali halide, alkali metal oxide or alkali metal salt.
5. organic electroluminescence device according to claim 4 is characterized in that, the alkali metal compound that described first cathode layer comprises is for being selected from LiF, Li
3N, Li
2CoO
2, LiBH
4, NaF, NaCl, KBH
4, KF, CsCO
3, CsF, CsCl, Rb
2O.
6. organic electroluminescence device according to claim 1 is characterized in that, described first cathode layer also comprises a kind of alkali earth metal.
7. organic electroluminescence device according to claim 1 is characterized in that, described first cathode layer is the alloy of Li and Mg, Li and Ca, Cs and Mg or Cs and Ca.
8. according to claim 6 or 7 described organic electroluminescence devices, it is characterized in that the shared mass percent of described alkali earth metal is 5%～50%.
9. according to the arbitrary described organic electroluminescence device of claim 1-8, it is characterized in that the thickness of described first cathode layer is 0.1～50nm.
10. organic electroluminescence device according to claim 9 is characterized in that, the thickness of described first cathode layer is 0.5～20nm.
11. organic electroluminescence device according to claim 1 is characterized in that, described second cathode layer is formed on first cathode layer.
12. organic electroluminescence device according to claim 1 is characterized in that, the alkaline-earth metal that described second cathode layer comprises is selected from Mg, Ca, Sr.
13. organic electroluminescence device according to claim 1 is characterized in that, the alloy of the alkaline including earth metal that described second cathode layer comprises is selected from the alloy of Mg and Ag, Ca and Ag, Sr and Ag, Mg and Li, Mg and Al or Ca and Li.
14. organic electroluminescence device according to claim 13 is characterized in that, the alkali earth metal that comprises in described second cathode layer shared mass percent in this layer is 50%～95%.
15., it is characterized in that the described second cathode layer thickness is 10～300nm according to claim 1 or the arbitrary described organic electroluminescence device of 11-14.
16. organic electroluminescence device according to claim 1 is characterized in that, described the 3rd cathode layer is formed on second cathode layer.
17., it is characterized in that the thickness of described the 3rd cathode layer is 20～300nm according to claim 1 or 16 described organic electroluminescence devices.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102394275A (en) * | 2011-12-07 | 2012-03-28 | 涂洪明 | Organic electroluminescent device having multilayer cathode |
| CN102593373A (en) * | 2012-03-21 | 2012-07-18 | 四川虹视显示技术有限公司 | Organic light emitting diode (OLED) composite transparent negative pole structure and preparation method thereof |
| CN104124353A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104124352A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104124351A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104124345A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1340218A (en) * | 1999-02-12 | 2002-03-13 | 剑桥显示技术有限公司 | Opto-electrical devices |
| WO2009084590A1 (en) * | 2007-12-28 | 2009-07-09 | Sumitomo Chemical Company, Limited | Polymer light-emitting device, method for manufacturing the same and polymer light-emitting display device |
-
2009
- 2009-11-13 CN CN 200910238027 patent/CN101710612B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1340218A (en) * | 1999-02-12 | 2002-03-13 | 剑桥显示技术有限公司 | Opto-electrical devices |
| WO2009084590A1 (en) * | 2007-12-28 | 2009-07-09 | Sumitomo Chemical Company, Limited | Polymer light-emitting device, method for manufacturing the same and polymer light-emitting display device |
Cited By (9)
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|---|---|---|---|---|
| CN102394275A (en) * | 2011-12-07 | 2012-03-28 | 涂洪明 | Organic electroluminescent device having multilayer cathode |
| CN102593373A (en) * | 2012-03-21 | 2012-07-18 | 四川虹视显示技术有限公司 | Organic light emitting diode (OLED) composite transparent negative pole structure and preparation method thereof |
| CN104124353A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104124352A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104124351A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104124345A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| KR20170077926A (en) * | 2015-12-28 | 2017-07-07 | 삼성디스플레이 주식회사 | Organic light emitting device |
| KR102562894B1 (en) * | 2015-12-28 | 2023-08-04 | 삼성디스플레이 주식회사 | Organic light emitting device |
| CN107919441A (en) * | 2016-10-06 | 2018-04-17 | 住友化学株式会社 | The manufacture method of organic EL device, display element and organic EL device |
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