CN101710572A - Method for reinforcing transconductance of AlGaN/GaN transistor with high electron mobility by dielectric material - Google Patents
Method for reinforcing transconductance of AlGaN/GaN transistor with high electron mobility by dielectric material Download PDFInfo
- Publication number
- CN101710572A CN101710572A CN200910216178A CN200910216178A CN101710572A CN 101710572 A CN101710572 A CN 101710572A CN 200910216178 A CN200910216178 A CN 200910216178A CN 200910216178 A CN200910216178 A CN 200910216178A CN 101710572 A CN101710572 A CN 101710572A
- Authority
- CN
- China
- Prior art keywords
- gan
- organic
- grid
- electron mobility
- algan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
The invention provides a method for reinforcing the transconductance of an AlGaN/GaN transistor with high electron mobility by a dielectric material. A high-K organic dielectric material is filled between a source electrode and a grid electrode of the AlGaN/GaN transistor with high electron mobility and between a drain electrode and the grid electrode of the AlGaN/GaN transistor with high electron mobility, wherein the high-K organic dielectric material is one of a liquid organic material, a high-K solid organic material, a high-K organic composite material and a high-K organic/inorganic composite material with the dielectric constant greater than 2. The high-K organic dielectric material can be in a liquid state and can also be in a solid state. The method can greatly reinforce the transconductance of the AlGaN/GaN transistor with high electron mobility, and the reinforcement of the transconductance can reach 70% under a situation that the threshold voltage is basically equivalent. The invention is mainly used for the AlGaN/GaN transistor with high electron mobility.
Description
Technical field
The present invention relates to a kind of method that strengthens transistor transconductance, particularly relate to the method for a kind of dielectric material REINFORCED Al GaN/GaN High Electron Mobility Transistor mutual conductance.
Background technology
The mutual conductance of AlGaN/GaN High Electron Mobility Transistor (HEMT) will directly influence its sensitivity.Improve the HEMT device mutual conductance and and then the sensitivity that improves HEMT, have the engineering using value of important scientific meaning and reality.As the semi-conductive typical case's representative of the third generation, GaN has high electronics saturation drift velocity, high-breakdown-voltage, high chemistry and thermal stability.At present, by improving method that the mutual conductance of AlGaN/GaN High Electron Mobility Transistor improves its power output mainly is to adhere to the inorganic dielectric film between the source electrode of AlGaN/GaN high electron mobility crystal and grid, drain electrode and grid, and these films mostly are sull, as Al
2O
3, HfO
2, PZT etc., there are many problems in they and semi-conductive compatible growth, and its growth need be carried out under high temperature, high oxygen partial pressures usually, and under such preparation condition, transistorized performance meeting serious degradation, cause electric property for example to degenerate people such as Igor Stolichnov, find that the PZT/AlGaN interfacial diffusion produces charge defects under the high temperature, cause the electric property degeneration of 2DEG etc. by the magnetron sputtering pzt thin film of on AlGaN/GaN, growing.
Summary of the invention
The objective of the invention is to overcome above-mentioned shortcoming, provide a kind of simple to operate, cost is low, the reliability height, can not reduce the transistor electricity performance, can be under the constant substantially situation of threshold voltage span strengthen the method that reaches 70% dielectric material REINFORCED Al GaN/GaN High Electron Mobility Transistor (hereinafter to be referred as AlGaN/GaN-HEMT) mutual conductance.
The method of dielectric material REINFORCED Al GaN/GaN-HEMT of the present invention mutual conductance is to fill high K organic media material between the source electrode of AlGaN/GaN-HEMT and grid and between drain electrode and the grid.Wherein, high K organic media material is a dielectric constant greater than 2 high K organic media material, and it comprises a kind of in high K liquid organic material, high K solid organic material, high K organic composite material, the high K organic/inorganic composite material.High K liquid organic material is amine, ketone, alcohols, acids, aldehydes, ester class and sulfone class, and at this moment, filling mode is directly it to be dripped between the source electrode of AlGaN/GaN-HEMT and grid and between drain electrode and the grid, and keeps its liquid situation.Generally that commonly used is N, dinethylformamide (DMF), dimethyl sulfoxide (DMSO) (DMSO), acetone (Acetone), ethanol (Ethanol), ethylene glycol (Glycol), glycerine (Glycerol), acetate (Acetic acid), formic acid (Formicacid), benzaldehyde (Benzaldehyde), ethyl acetate (Ethyl acetate); When high K organic media is high K solid organic material, high K organic composite material and high K organic/inorganic composite material, filling mode is, at first select corresponding solvent, with material dissolves in solvent, be mixed with the solution of concentration expressed in percentage by weight 10～80%, drip then between the source electrode of AlGaN/GaN-HEMT and grid and between drain electrode and the grid, in solidifying under the room temperature or according to character baking and curing under 80～200 ℃ of temperature of solvent.Wherein, high K solid organic material is polymerized phthalocyanine copper (O-CuPc), o-phenylenediamine, four butyl bromation amine, naphthalene class material; High K organic composite material is polyaniline/epoxy resin (PANI/Epoxy), Kynoar (PVDF), P (VDF-TrFE), P (VDF-TrFE-CTFE), CuPc/P (VDF-TrFE), polyimides; Titanate/Kynoar that high K organic/inorganic composite material is the perovskite phase, the titanate/epoxy resin of perovskite phase and silver/epoxy resin (Ag/Epoxy).Wherein, the titanate/Kynoar of perovskite phase is lead zirconate titanate/Kynoar (PZT/PVDF), barium titanate/Kynoar (BaTiO
3/ PVDF), PMN-PT/Kynoar (PMN-PTO/PVDF).Titanate/the epoxy resin of perovskite phase is barium titanate/epoxy resin (BaTiO
3/ Epoxy).
The advantage of the method for dielectric material REINFORCED Al GaN/GaN-HEMT of the present invention mutual conductance is simple to operate, can under the condition of room temperature and no oxygen dividing potential drop, carry out, cost is low, the reliability height, can not reduce the transistor electricity performance, the mutual conductance of gained dielectric REINFORCED Al GaN/GaN-HEMT is increased substantially, and under the suitable substantially situation of threshold voltage, mutual conductance strengthens can reach 70%.Be mainly used in the AlGaN/GaN High Electron Mobility Transistor and strengthen mutual conductance.
Embodiment
Embodiment 1
Adopt the method for dimethyl sulfoxide (DMSO) (DMSO) dielectric material REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1:, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT at dropping liquid body medium DMSO between source electrode and the grid and between drain electrode and the grid.It is as shown in table 1 that its mutual conductance strengthens ratio.
Embodiment 2
Adopt N, the method for dinethylformamide (DMF) dielectric material REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1:, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT at dropping liquid body medium DMF between source electrode and the grid and between drain electrode and the grid.
Embodiment 3
Adopt the method for ethanol dielectric material REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1:, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT at dropping liquid body medium ethanol between source electrode and the grid and between drain electrode and the grid.
Embodiment 4
Adopt the method for acetone dielectric material REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1:, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT at dropping liquid body medium acetone between source electrode and the grid and between drain electrode and the grid.
Embodiment 5
Adopt the method for ethyl acetate dielectric material REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1:, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT at dropping liquid body medium ethyl acetate between source electrode and the grid and between drain electrode and the grid.
Embodiment 6
Adopt the method for benzaldehyde dielectric material REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1:, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT at dropping liquid body medium benzaldehyde between source electrode and the grid and between drain electrode and the grid.
Embodiment 7
Adopt the method for acetate dielectric material REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1:, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT at dropping liquid body medium acetate between source electrode and the grid and between drain electrode and the grid.
Embodiment 8
Adopt the method for oligomerization CuPc (O-CuPc) REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: (O-CuPc) is dissolved among the DMF with the oligomerization CuPc, forms the homogeneous solution of concentration expressed in percentage by weight 50%;
Step 2:,, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT in 80 ℃ of following baking and curing dripping step 1 product between source electrode and the grid and between drain electrode and the grid.It is as shown in table 1 that its mutual conductance strengthens ratio.
Embodiment 9
Adopt the method for naphthols REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: naphthols is dissolved in the acetone, forms the homogeneous solution of concentration expressed in percentage by weight 80%;
Step 2:,, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT in 80 ℃ of following baking and curing dripping step 1 product between source electrode and the grid and between drain electrode and the grid.
Embodiment 10
Adopt the method for o-phenylenediamine REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: o-phenylenediamine is dissolved in the acetone, forms the homogeneous solution of concentration expressed in percentage by weight 10%;
Step 2: dripping step 1 product between source electrode and the grid and between drain electrode and the grid, spontaneous curing under room temperature finally obtains dielectric REINFORCED Al GaN/GaN-HEMT.
Embodiment 11
Adopt the method for polyaniline/epoxy resin (PANI/Epoxy) dielectric REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: polyaniline/epoxy resin is dissolved in the chloroform, and adds the HMPA curing agent, form the homogeneous solution of concentration expressed in percentage by weight 30%;
Step 2: the product dripping step 1 between source electrode and the grid and between drain electrode and the grid in 80 ℃ of following baking and curing, finally obtains dielectric REINFORCED Al GaN/GaN-HEMT.It is as shown in table 1 that its mutual conductance strengthens ratio.
Embodiment 12
Adopt the method for Kynoar (PVDF) dielectric REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: PVDF is dissolved in the DMF solution, forms the homogeneous solution of concentration expressed in percentage by weight 80%;
Step 2: the product dripping step 1 between source electrode and the grid and between drain electrode and the grid in 150 ℃ of following baking and curing, finally obtains dielectric REINFORCED Al GaN/GaN-HEMT.
Embodiment 13
Adopt the method for polymide dielectric REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: in polyimides dissolving and acetone, form the homogeneous solution of concentration expressed in percentage by weight 60%;
Step 2: the product dripping step 1 between source electrode and the grid and between drain electrode and the grid in 80 ℃ of following baking and curing, finally obtains dielectric REINFORCED Al GaN/GaN-HEMT.
Embodiment 14
Adopt the method for P (VDF-TrFE) dielectric REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: under the room temperature, in P (VDF-TrFE) dissolving and DMF, form the homogeneous solution of concentration expressed in percentage by weight 60%;
Step 2: the product dripping step 1 between source electrode and the grid and between drain electrode and the grid in 140 ℃ of following baking and curing, finally obtains dielectric REINFORCED Al GaN/GaN-HEMT.
Embodiment 15
Adopt barium titanate/Kynoar (BaTiO
3/ PVDF) the method for REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: barium titanate powder is scattered among the DMF, and its concentration expressed in percentage by weight is 10%, after ultrasonic 4 hours, joins in the DMF solution that is dissolved with PVDF, and its concentration expressed in percentage by weight is 50%, ultrasonic once more 1 hour, forms homogeneous solution;
Step 2: add the product of step 1 relegating a high offi between source electrode and the grid and between drain electrode and the grid,, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT in 150 ℃ of following baking and curing.Its enhancing ratio is as shown in table 1.
Embodiment 16
Adopt barium titanate/epoxy resin (BaTiO
3/ Epoxy) the method for REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: barium titanate powder is scattered among the DMF, and its concentration expressed in percentage by weight is 20%, after ultrasonic 4 hours, joins in the DMF solution that is dissolved with Epoxy, and its concentration expressed in percentage by weight is 50%, ultrasonic once more 4 hours, forms homogeneous solution;
Step 2: at the product that drips step 1 between source electrode and the grid and between drain electrode and the grid, baking and curing under 150 degree finally obtains dielectric REINFORCED Al GaN/GaN-HEMT.
Embodiment 17
Adopt the method for silver/epoxy resin (Ag/Epoxy) REINFORCED Al GaN/GaN-HEMT mutual conductance:
Step 1: the Ag powder is scattered in the acetone, and its concentration expressed in percentage by weight is 10%, after ultrasonic 4 hours, joins in the acetone soln that is dissolved with Epoxy, and its concentration expressed in percentage by weight is 50%, ultrasonic once more 4 hours, forms homogeneous solution;
Step 2:,, finally obtain dielectric REINFORCED Al GaN/GaN-HEMT in 100 ℃ of oven dry down at the product that drips step 1 between source electrode and the grid and between drain electrode and the grid.
Table 1:The AlGaN/GaN-HEMT mutual conductance strengthens ratio after adopting the inventive method
| Dielectric material | DMSO embodiment 1 | O-CuPc embodiment 8 | PANI/Epoxy embodiment 11 | ??BaTiO 3/ PVDF embodiment 15 |
| Mutual conductance strengthens ratio | ??70％ | ??43％ | ??52％ | ??33％ |
Claims (4)
1. the method for dielectric material REINFORCED Al GaN/GaN High Electron Mobility Transistor mutual conductance, it is characterized in that filling between the source electrode of AlGaN/GaN High Electron Mobility Transistor and grid and between drain electrode and the grid high K organic media material, wherein, high K organic media material is a kind of in high K liquid organic material, high K solid organic material, high K organic composite material, the high K organic/inorganic composite material.
2. the method for dielectric material REINFORCED Al GaN/GaN High Electron Mobility Transistor mutual conductance according to claim 1 is characterized in that high K organic media material is a dielectric constant greater than 2 high K organic media material.
3. as the method for dielectric material REINFORCED Al GaN/GaN High Electron Mobility Transistor mutual conductance as described in the claim 2, it is characterized in that when high K organic media material is the high K liquid organic material of amine, ketone, alcohols, acids, aldehydes, ester class and sulfone class its filling mode is directly it to be dripped between the source electrode of AlGaN/GaN High Electron Mobility Transistor and grid and between drain electrode and the grid; When high K organic media is high K solid organic material, high K organic composite material and high K organic/inorganic composite material, its filling mode is, at first it is dissolved in the solvent, be mixed with the solution of concentration expressed in percentage by weight 10～80%, and then drip between the source electrode of AlGaN/GaN High Electron Mobility Transistor and grid and between drain electrode and the grid, in cold curing or under 80～200 ℃ of temperature baking and curing.
4. as the method for dielectric material REINFORCED Al GaN/GaN High Electron Mobility Transistor mutual conductance as described in the claim 3, it is characterized in that high K liquid organic material is N, dinethylformamide (DMF), dimethyl sulfoxide (DMSO) (DMSO), acetone (Acetone), ethanol (Ethanol), ethylene glycol (Glycol), glycerine (Glycerol), acetate (Acetic acid), formic acid (Formicacid), benzaldehyde (Benzaldehyde), ethyl acetate (Ethyl acetate); High K solid organic material is polymerized phthalocyanine copper (O-CuPc), o-phenylenediamine, four butyl bromation amine, naphthalene class material; High K organic composite material is polyaniline/epoxy resin (PANI/Epoxy), Kynoar (PVDF), P (VDF-TrFE), P (VDF-TrFE-CTFE), CuPc/P (VDF-TrFE), polyimides; Titanate/Kynoar that high K organic/inorganic composite material is the perovskite phase, the titanate/epoxy resin of perovskite phase, silver/epoxy resin (Ag/Epoxy).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102161789A CN101710572B (en) | 2009-11-10 | 2009-11-10 | Method for reinforcing transconductance of AlGaN/GaN transistor with high electron mobility by dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102161789A CN101710572B (en) | 2009-11-10 | 2009-11-10 | Method for reinforcing transconductance of AlGaN/GaN transistor with high electron mobility by dielectric material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101710572A true CN101710572A (en) | 2010-05-19 |
| CN101710572B CN101710572B (en) | 2011-08-10 |
Family
ID=42403349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102161789A Expired - Fee Related CN101710572B (en) | 2009-11-10 | 2009-11-10 | Method for reinforcing transconductance of AlGaN/GaN transistor with high electron mobility by dielectric material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101710572B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116754617A (en) * | 2023-08-17 | 2023-09-15 | 太原理工大学 | GaN-Metal/PANI ammonia sensor and preparation method and application thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100433365C (en) * | 2006-10-16 | 2008-11-12 | 中国电子科技集团公司第五十五研究所 | Aluminium gallium nitride/gallium nitride high electronic migration rate transistor and its manufacturing method |
| CN100479194C (en) * | 2006-12-31 | 2009-04-15 | 电子科技大学 | GaN base transistor with high electronic transfer rate |
-
2009
- 2009-11-10 CN CN2009102161789A patent/CN101710572B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116754617A (en) * | 2023-08-17 | 2023-09-15 | 太原理工大学 | GaN-Metal/PANI ammonia sensor and preparation method and application thereof |
| CN116754617B (en) * | 2023-08-17 | 2023-10-27 | 太原理工大学 | GaN-Metal/PANI ammonia sensor and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101710572B (en) | 2011-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101777583B (en) | Graphene field effect transistor | |
| Sayago et al. | Low voltage electrolyte-gated organic transistors making use of high surface area activated carbon gate electrodes | |
| Lee et al. | Ultrahigh-mobility and solution-processed inorganic P-channel thin-film transistors based on a transition-metal halide semiconductor | |
| He et al. | Solution-processed natural gelatin was used as a gate dielectric for the fabrication of oxide field-effect transistors | |
| Jo et al. | Experimental observation of voltage amplification using negative capacitance for sub-60 mV/decade CMOS devices | |
| Seol et al. | Highly conductive, binary ionic liquid–solvent mixture ion gels for effective switching of electrolyte-gated transistors | |
| CN101710572B (en) | Method for reinforcing transconductance of AlGaN/GaN transistor with high electron mobility by dielectric material | |
| Cherukupally et al. | A comparative study on printable solid electrolytes toward ultrahigh current and environmentally stable thin film transistors | |
| CN103709565A (en) | Composite fiber and polymer based flexible composite film and preparation method thereof | |
| CN105336860A (en) | Flexible low-voltage organic field effect transistor and manufacturing method thereof | |
| Park et al. | Environmental effects on the electrical behavior of pentacene thin-film transistors with a poly (methyl methacrylate) gate insulator | |
| Yu et al. | High-k polymeric gate insulators for organic field-effect transistors | |
| Jeong et al. | Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors | |
| CN104078243A (en) | Solid electrolytic capacitor based on graphene composite polyaniline | |
| CN107112138A (en) | The manufacture method of electrolytic capacitor | |
| US9997709B2 (en) | Method for manufacturing transistor according to selective printing of dopant | |
| CN103979962B (en) | The preparation method of the unleaded gradient thick film of a kind of barium calcium zirconate titanate | |
| TW201330242A (en) | Electronic devices including bio-polymeric material and method for manufacturing the same | |
| JP6323771B2 (en) | Electrolytic solution for electrolytic capacitor drive | |
| Han et al. | Research progress and development prospects of enhanced GaN HEMTs | |
| Yang et al. | A sol–gel titanium–silicon oxide/organic hybrid dielectric for low-voltage organic thin film transistors | |
| KR102118739B1 (en) | Gel type composite electrolyte improved in ion conductivity and electrostatic capacity and organic thin film transistor including the same | |
| CN101872768A (en) | Ferroelectric dynamic random storage based on bismuth based storage materials and preparation method thereof | |
| Fan et al. | Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator | |
| CN105514273B (en) | Ferroelectricity/semiconductor of a kind of high electrical stability/PMMA tri compound resistance changing films and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110810 Termination date: 20121110 |