CN101710524B - Method for preparing InAs room-temperature ferro magnetic semiconductor material - Google Patents
Method for preparing InAs room-temperature ferro magnetic semiconductor material Download PDFInfo
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- CN101710524B CN101710524B CN 200910241700 CN200910241700A CN101710524B CN 101710524 B CN101710524 B CN 101710524B CN 200910241700 CN200910241700 CN 200910241700 CN 200910241700 A CN200910241700 A CN 200910241700A CN 101710524 B CN101710524 B CN 101710524B
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Abstract
The present invention discloses a method for preparing an InAs room-temperature ferro magnetic semiconductor material, which comprises the following steps of: cleaning the surface of an InAs single chip with a chemical cleaning agent and removing an oxide layer and an inorganic substance on the surface by an acid etching method; putting the cleaned InAs single chip in a deposition apparatus to deposit a layer of metal diffusion layer; placing the InAs single chip deposited with the metal diffusion layer in a quartz tube, and sealing the quartz tube after vacuumizing; heating the vacuumized quartz tube in heating equipment at a constant temperature so as to speed up the diffusion process; after cutting up the heated quartz tube, taking out the InAs single chip, and etching the redundant metal with an acidic liquid; and cleaning the n InAs single chip with the chemical cleaning agent to finish the preparation. The method of the invention can prepare the ferro magnetic semiconductor material of which the temperature of the InAs single chip is over 300K; in the whole preparation process, the used equipment is mature in technology and commonly used in industry; and the method reduces the preparation cost and the preparation time and is very favorable for popularization.
Description
Technical field
The present invention relates to InAs room-temperature ferromagnetic semi-conducting material preparing technical field, particularly relate to a kind of method of utilizing diffusion principle to prepare InAs room-temperature ferromagnetic semi-conducting material.
Background technology
Modern information technologies are mainly concerned with two class important materials, i.e. magnetic material and semi-conducting material.The material of this two aspect has successfully utilized electric charge and two kinds of features of spin of electronics, and wherein information recording device such as disk, CD etc. have utilized the electron spin degree of freedom and the magnetic moment of magnetic material exactly; And the information processing aspect, integrated circuit, high-frequency element etc. then is to have utilized the electron charge in the semi-conducting material to move to finish.Therefore with the semi-conducting material magnetization, make the photoelectric characteristic of semi-conducting material and magnetic property combine, to making during the new function and the development of whole information technology will produce fundamental influence.
Calendar year 2001 be published on the Science about TiO
2Still having ferromagnetic achievement when temperature is higher than 400K is a quantum jump of room-temperature ferromagnetic semi-conducting material.Now, the method that is used for preparing the room temperature ferrimagnet mainly contains molecular beam epitaxy, and ion injects and metal organic chemical vapor deposition.These methods are in application facet, the cost height, and efficient is low.The present invention will use diffusion principle, by simple method, and preparation InAs room-temperature ferromagnetic semi-conducting material.
Summary of the invention
(1) technical problem that will solve
The object of the present invention is to provide a kind of method of the InAs of preparation room-temperature ferromagnetic semi-conducting material, with the ferromagnetic semiconductor material of temperature more than 300K of preparing InAs body monocrystalline.
(2) technical scheme
For achieving the above object, the invention provides a kind of method of the InAs of preparation room-temperature ferromagnetic semi-conducting material, may further comprise the steps:
Step 1: utilize chemical that thickness is clean for the InAs single-chip surface clean of 0.5mm to 0.7mm, and utilize the acid etch method to remove surface oxide layer and inorganic matter;
Step 2: will handle clean InAs single-chip and put into depositing device, deposition layer of metal diffusion layer; This metal diffusion layer is metal M n, and its thickness is 0.1mm to 0.3mm;
Step 3: the InAs single-chip that will deposit metal diffusion layer is put into quartz ampoule, and sealed after being vacuumized;
Step 4: the quartz ampoule of vacuum sealing is put into the firing equipment heated at constant temperature, and heating-up temperature is 800 ℃, quickens diffusion process;
Step 5: after heated quartz tube cut open, take out the InAs single-chip, and etch away excess metal with acidic liquid.
Step 6: with chemical the InAs single-chip is cleaned up, finish preparation.
In the such scheme, depositing device described in the step 2 is a vacuum coating system.
In the such scheme, underlayer temperature is 0 to 200 ℃ during the diffusion layer of plated metal described in the step 2.
In the such scheme, sealed silica envelope described in the step 3 adopts the oxyhydrogen flame system.
In the such scheme, firing equipment described in the step 4 is the vapor transportation high temperature resistance furnace.
In the such scheme, the quartzy equipment of cutting described in the step 5 is the quartzy cutting machine of boiler water circulation.
In the such scheme, acidic liquid described in the step 5 is a watery hydrochloric acid.
(3) beneficial effect
This method for preparing InAs room-temperature ferromagnetic semi-conducting material provided by the invention, can prepare the ferromagnetic semiconductor material of temperature more than 300K of InAs body monocrystalline, and employed equipment all is technology maturation in the whole process of preparation, the equipment that industry is commonly used, and shortened preparation cost and preparation time, be beneficial to very much popularization.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the method flow diagram of preparation InAs room-temperature ferromagnetic semi-conducting material provided by the invention;
Fig. 2 is the structural representation of the film of being grown among the present invention;
The magnetic performance test result of InAs room-temperature ferromagnetic semi-conducting material in the embodiment of the invention of Fig. 3 position.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
See also shown in Figure 1ly, Fig. 1 is the method flow diagram of preparation provided by the invention InAs room-temperature ferromagnetic semi-conducting material, may further comprise the steps:
Step 1: utilize chemical that InAs single-chip surface clean is clean, and utilize the acid etch method to remove surface oxide layer and inorganic matter, the thickness of wherein said InAs single-chip is 0.5mm to 0.7mm;
Step 2: will handle clean InAs single-chip and put into depositing device, deposition layer of metal diffusion layer, wherein said depositing device is a vacuum coating system, described metal diffusion layer is metal M n, evaporation thickness is 0.1mm-0.3mm, and the underlayer temperature of described layer metal deposition is 100 ℃.
Step 3: the InAs single-chip that will deposit metal diffusion layer is put into quartz ampoule, and sealed after being vacuumized, and wherein said quartz ampoule sealing device is the oxyhydrogen flame system;
Step 4: the quartz ampoule of vacuum sealing is put into the firing equipment heated at constant temperature, quicken diffusion process, wherein said firing equipment is the vapor transportation high temperature resistance furnace, and heating-up temperature is 800 ℃;
Step 5: after heated quartz tube cut open, take out the InAs single-chip, and etch away excess metal with acidic liquid, the equipment of wherein said cutting quartz is the quartzy cutting machine of boiler water circulation, and described acidic liquid is a watery hydrochloric acid.
Step 6: with chemical the InAs single-chip is cleaned up, finish preparation.
Embodiment
Choosing thickness is the InAs single-chip of 0.5mm to 0.7mm, utilize washing lotions such as ethanol, acetone that InAs single-chip surface clean is clean, and utilize the acid etch method to remove surface oxide layer and inorganic matter, and utilize the hf etching method to remove oxide layer at last, be that single-chip is in the dehydration shape;
Put into vacuum coating system with handling clean InAs single-chip, place Mn powder deposition layer of metal diffusion layer on the evaporation boat, deposit thickness is 0.1mm to 0.3mm, and the underlayer temperature of layer metal deposition is 100 ℃, and vacuum pressure is 3 * 10
-3Pa;
The InAs single-chip that has deposited metal diffusion layer is put into quartz ampoule, will be extracted into vacuum state in the quartz ampoule with pump, and with oxyhydrogen flame sintering sealed silica envelope;
The quartz ampoule of vacuum sealing was put into the high temperature resistance furnace heated at constant temperature 24 hours, quicken diffusion process, make heating-up temperature constant at 800 ℃; After after the heating quartz ampoule being cut open, take out the InAs single-chip, and etch away excess metal with corresponding acid solution etc.With 0.5mol/L watery hydrochloric acid the InAs single-chip is cleaned up, finish preparation.The structural representation of the film that Fig. 2 shows among the present invention to be grown.
In this embodiment, with the InAs single-chip that spread Mn its magnetic property of SQUID analytical test.As shown in Figure 3, can see in Fig. 3, be under the 300K in temperature, and the InAs single-chip still presents tangible magnetic hysteresis loop.When this was illustrated in 300K, material still had ferromagnetism.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a method for preparing InAs room-temperature ferromagnetic semi-conducting material is characterized in that, may further comprise the steps:
Step 1: utilize chemical that thickness is clean for the InAs single-chip surface clean of 0.5mm to 0.7mm, and utilize the acid etch method to remove surface oxide layer and inorganic matter;
Step 2: will handle clean InAs single-chip and put into depositing device, deposition layer of metal diffusion layer; This metal diffusion layer is metal M n, and its thickness is 0.1mm to 0.3mm;
Step 3: the InAs single-chip that will deposit metal diffusion layer is put into quartz ampoule, and sealed after being vacuumized;
Step 4: the quartz ampoule of vacuum sealing is put into the firing equipment heated at constant temperature, and heating-up temperature is 800 ℃, quickens diffusion process;
Step 5: after heated quartz tube cut open, take out the InAs single-chip, and etch away excess metal with acidic liquid;
Step 6: with chemical the InAs single-chip is cleaned up, finish preparation.
2. the method for preparing InAs room-temperature ferromagnetic semi-conducting material according to claim 1 is characterized in that, depositing device described in the step 2 is a vacuum coating system.
3. the method for preparing InAs room-temperature ferromagnetic semi-conducting material according to claim 1 is characterized in that, underlayer temperature is 0 to 200 ℃ during the diffusion layer of plated metal described in the step 2.
4. the method for preparing InAs room-temperature ferromagnetic semi-conducting material according to claim 1 is characterized in that, sealed silica envelope described in the step 3 adopts the oxyhydrogen flame system.
5. the method for preparing InAs room-temperature ferromagnetic semi-conducting material according to claim 1 is characterized in that, firing equipment described in the step 4 is the vapor transportation high temperature resistance furnace.
6. the method for preparing InAs room-temperature ferromagnetic semi-conducting material according to claim 1 is characterized in that, the quartzy equipment of cutting described in the step 5 is the quartzy cutting machine of boiler water circulation.
7. the method for preparing InAs room-temperature ferromagnetic semi-conducting material according to claim 1 is characterized in that, acidic liquid described in the step 5 is a watery hydrochloric acid.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910241700 CN101710524B (en) | 2009-12-02 | 2009-12-02 | Method for preparing InAs room-temperature ferro magnetic semiconductor material |
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| CN 200910241700 CN101710524B (en) | 2009-12-02 | 2009-12-02 | Method for preparing InAs room-temperature ferro magnetic semiconductor material |
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| CN101710524A CN101710524A (en) | 2010-05-19 |
| CN101710524B true CN101710524B (en) | 2011-08-17 |
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| CN108085744A (en) * | 2017-12-27 | 2018-05-29 | 中国科学院半导体研究所 | A kind of method for the indium arsenide monocrystalline for preparing p-type additive Mn |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002255695A (en) * | 2001-03-02 | 2002-09-11 | Japan Science & Technology Corp | Ferromagnetic group iii-v compound and controlling method for the ferromagnetic characteristics thereof |
| CN1659664A (en) * | 2002-06-07 | 2005-08-24 | 独立行政法人科学技术振兴机构 | Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-VI group based compound semiconductor, and method for adjusting their ferromagne |
| CN101404198A (en) * | 2008-05-30 | 2009-04-08 | 北方工业大学 | Dilute magnetic semiconductor material with high curie temperature and its production method |
| CN101471244A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院半导体研究所 | Method for producing dilute magnetic semiconductor film |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002255695A (en) * | 2001-03-02 | 2002-09-11 | Japan Science & Technology Corp | Ferromagnetic group iii-v compound and controlling method for the ferromagnetic characteristics thereof |
| CN1659664A (en) * | 2002-06-07 | 2005-08-24 | 独立行政法人科学技术振兴机构 | Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-VI group based compound semiconductor, and method for adjusting their ferromagne |
| CN101471244A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院半导体研究所 | Method for producing dilute magnetic semiconductor film |
| CN101404198A (en) * | 2008-05-30 | 2009-04-08 | 北方工业大学 | Dilute magnetic semiconductor material with high curie temperature and its production method |
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