CN101701356A - Lower weighing method used for equal-diameter growth of photoelectric crystal - Google Patents
Lower weighing method used for equal-diameter growth of photoelectric crystal Download PDFInfo
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Abstract
The invention discloses a lower weighing method used for the equal-diameter growth of a photoelectric crystal, which comprises the following steps: a crucible, a pulling rod, a heating module, a temperature measurement module, a temperature control module, a pulling module, a rotation module, a monitoring module and a modification module thereof are provided, wherein the crucible is heated by the heating module, the temperature of the crucible is measured in real time by the temperature measurement module, the heating module is controlled by the temperature control module, the pulling speed of the pulling rod is regulated by the pulling module, the rotation speed of the pulling rod is regulated by the rotation module, and the weight of the residual crystal in the crucible is monitored by the monitoring module; the crucible is heated by the heating module, the melting of a raw material is waited, and a shouldering process of pulling the crystal is begun; in an equal-diameter growth stage, the monitoring module monitors that the weight of the crystal in the crucible is continuously lowered, and the growth rate of the crystal is judged according to the change rate of the weight; and the monitoring module controls the heating power of the heating module, the pulling speed of the pulling module and the rotation speed of the rotation module according to the situation of the change rate of the weight to maintain the uniformity of the change rate of the weight until the growth of the crystal is completed. The invention has high measurement accuracy and reliable crystal quality.
Description
Technical field
The present invention relates to a kind of following Weighing method that is used for the photoelectric crystal isodiametric growth.
Background technology
Artificial lens plays more and more important effect in science and technology and industrial production field, and the growth of crystalline automatic equal-diameter is a most important link in the crystal preparation process, also is the key that the decision crystal prepares yield rate.Common crystal diameter control method comprises aperture control diameter method, reflection method, up weighing method.Below this several method is illustrated.
Aperture control diameter method: crystal lifts in the process, on the liquid level around the crystal, has an aperture that changes with crystal diameter.With optical system aperture is taken a sample, utilize image processing method to obtain aperture size, and then can determine the crystalline diameter information.Cooperate again with the control corresponding algorithm, can reach the purpose of control diameter.This method will be obtained crystal diameter by the analysis to image based on digital image processing techniques.Its shortcoming is that sensitivity is relatively poor, has only when crystal diameter generation considerable change, and system just can respond.This method is applicable to large volume crystal such as growing single-crystal silicon, but is not suitable for being generalized in the automatic growth control of photoelectric crystal.
Reflection method: when crystal growth, crystal extension and melt intersection form meniscus because smelt surface tension makes, meniscus changes with crystal diameter, and its radius-of-curvature also can change.Utilize this point, shine on the meniscus with beam of laser, laser can be reflected.If variation has taken place the curvature of meniscus, then catoptrical drop point will change.According to catoptrical drop point difference, can obtain crystal diameter information, thereby reach the purpose of control diameter.The shortcoming of this method is that optical system is too complicated, and can only be at very little scope inner control diameter.In case the crystal diameter variation is excessive in the crystal growth, laser facula is dropped on outside the meniscus, thereby can't obtain diameter information.
Up weighing method: this is the more control method of present domestic usefulness, and its ultimate principle is also fairly simple.Along with the crystalline growth, crystalline weight can continue to increase.If can on seed rod, add LOAD CELLS, monitor crystalline weight in real time, then can obtain crystal diameter weight to the time differentiate.The benefit of this method is that the method for obtaining crystal diameter is simple and reliable relatively, is easy to realize.Shortcoming is because seed rod constantly rotates in the crystal growing process, constantly lifted, more than the shown changes in weight of weighing, will inevitably be subjected to the interference of seed rod mechanical movement, cause measuring diameter and deviation occurs.
Summary of the invention
At the shortcoming of prior art, the purpose of this invention is to provide the high following Weighing method that is used for the photoelectric crystal isodiametric growth of a kind of measuring accuracy.
For achieving the above object, technical scheme of the present invention is: a kind of following Weighing method that is used for the photoelectric crystal isodiametric growth, and it may further comprise the steps: a. provides one the crystalline crucible is housed, the lifting rod that is used for pulling crystal, the heating module that crucible is heated, measure the temperature measurement module of crucible temperature in real time, control the temperature control module of heating module according to the temperature of crucible measurement, regulate the module that lifts of lifting rod pull rate, regulate the rotary module of lifting rod speed of rotation, residue crystal weight in the crucible is made the monitoring module of monitoring and the correcting module that residue crystal weight signal is revised; B. heating module heats crucible, waits for the raw material fusing, and the shouldering process of beginning pulling crystal; C. enter the isodiametric growth stage, monitoring module monitors the interior crystal weight of crucible and constantly descends, and judges the crystalline growth velocity according to the rate of change of weight; D. monitoring module according to the weight rate situation control heating module heating power, lift the pull rate of module and the speed of rotation of rotary module, consistent with the rate of change of keeping weight with default value, until finishing crystal growth.
In this method, the Controlling System by bus and communication protocol are connected with each module realizes the real-time control to each module.
Each module is equipped with a control submodule that is used to control and safeguard this module, and the control submodule passes through the bus interaction data with Controlling System.
This rotary module also comprises rotating machine and driving circuit thereof, and rotating machine forms feedback voltage with its actual speed and feeds back to the control submodule, when the control submodule detects actual speed and preset value not simultaneously, then the rotating machine rotating speed is adjusted in the preset value.
This lifts module and also comprises and lift motor and driving circuit thereof, lift to be provided with in the control submodule of module and be used to monitor the grating chi that lifts displacement motor, when the control submodule detects actual pull rate and preset value not simultaneously, then will lift motor speed and be adjusted in the preset value.
This temperature control module is that tolerance range is less than or equal to 0.1 degree centigrade temperature control instrument, and this temperature measurement module is a thermopair.
This heating module comprises crucible is carried out the intermediate frequency coil of contactless heating and is connected to the intermediate frequency power supply of intermediate frequency coil.
This monitoring module comprises that being located at the crucible below is used for the electronic scales of crystal weight in the weighing body of heater and the MCU driving circuit that is connected with electronic scales, and this crucible is located at and is pressed on the heat insulated supporter of being located on the electronic scales.
This monitoring module comprises that the electronic scales reading error that intermediate frequency coil heating power fluctuation is produced carries out filtering filter unit.
Also comprise alarm module and a plurality of temperature sensor that is used to detect crucible temperature, when the temperature that detects crucible when temperature sensor went beyond the limit of temperature, this alarm module was realized reporting to the police.
This Controlling System comprise with each module transmit mutually parameter input-output unit, be used to judge whether the actual parameter of crystal growing process surpasses the parameter judging unit of default protection parameter area and the processing unit that each parameter is handled.
The present invention compared with prior art has following advantage and beneficial effect:
The present invention uses down weighting method, has realized the growth of crystalline automatic equal-diameter.The present invention has successfully overcome in the up weighing method, and the seed rod mechanical movement makes weighing result more accurate to the resultant interference of weighing, and crystal mass also improves a lot.The whole process of isodiametric growth of crystal has realized automatic control, has got rid of artificial factor, has guaranteed crystal mass, also realizes easily producing in batches.
Controlling System of the present invention realizes the full-automation growth of photoelectric crystal by unified bus and each module of communication protocol unified management; The present invention realizes the stable control of temperature by the Heating temperature of high-precision temperature control module monitoring crucible, avoids having improved the measuring accuracy of electronic scales because the fluctuation of heating power impacts electronic scales.
Safety of the present invention, reliable, convenient allows bit manipulation personnel to manage multiple devices simultaneously, thus easy realization of large-scale production.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is control principle figure of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail.
As shown in Figures 1 and 2, the present invention discloses a kind of following Weighing method that is used for the photoelectric crystal isodiametric growth, and it may further comprise the steps: a. provides one the crystalline crucible is housed, the lifting rod that is used for pulling crystal, the heating module that crucible is heated, measure the temperature measurement module of crucible temperature in real time, control the temperature control module of heating module according to the temperature of crucible measurement, regulate the module that lifts of lifting rod pull rate, regulate the rotary module of lifting rod speed of rotation, residue crystal weight in the crucible is made the monitoring module of monitoring and the correcting module that residue crystal weight signal is revised; B. heating module heats crucible, waits for the raw material fusing, and undergauge, shouldering, the isodiametric growth process of beginning pulling crystal; C. enter the isodiametric growth stage, monitoring module monitors the interior crystal weight of crucible and constantly descends, and judges the crystalline growth velocity according to the rate of change of weight; D. monitoring module according to the weight rate situation control heating module heating power, lift the pull rate of module and the speed of rotation of rotary module, even with the rate of change of keeping weight, until finishing crystal growth.
System disturbance produces the interference of weighing-up wave.Weighing-up wave also may be subjected to various turbulent and disturb and the generation fluctuation.Correcting module can effectively be revised the fluctuation that this disturbance produces.For example owing to crucible, stay-warm case etc. are installed the fluctuation that produces weighing-up wave accidentally.This fluctuation is very common, owing to install accidentally, situations such as weight off-centre appear in crucible, can exert an influence to weighing-up wave.In a single day correcting module finds this situation, also can provide prompting, stops the crystal preparation, requires operator's debug.
In this method, utilize a Controlling System that is connected with each module by bus and communication protocol, realize real-time control each module.
Each module is equipped with a control submodule that is used to control and safeguard this module, and the control submodule passes through the bus interaction data with Controlling System.
This rotary module also comprises rotating machine and driving circuit thereof, and rotating machine forms feedback voltage with its actual speed and feeds back to the control submodule, when the control submodule detects actual speed and preset value not simultaneously, then the rotating machine rotating speed is adjusted in the preset value.
This lifts module and also comprises and lift motor and driving circuit thereof, lift to be provided with in the control submodule of module and be used to monitor the grating chi that lifts displacement motor, when the control submodule detects actual pull rate and preset value not simultaneously, then will lift motor speed and be adjusted in the preset value.
This temperature control module is that tolerance range is less than or equal to 0.1 degree centigrade temperature control instrument, and this temperature measurement module is a thermopair.
This heating module comprises crucible is carried out the intermediate frequency coil of contactless heating and is connected to the intermediate frequency power supply of intermediate frequency coil.Adopt high-power intermediate frequency coil, the metallic conductor crucible is heated.This just non-contacting type of heating is for following weighting method provides feasible physical construction.
This monitoring module comprises that being located at the crucible below is used for the electronic scales of crystal weight in the weighing body of heater and the MCU driving circuit that is connected with electronic scales, and this crucible is located at and is pressed on the heat insulated supporter of being located on the electronic scales.
Adopt wide range, high-precision electronic scales as LOAD CELLS, the physical construction of weighing is referring to accompanying drawing 1.Crucible is placed on above the heat insulated supporter, and heat insulated supporter then is pressed on the electronic scales, so can read the gross weight of heat insulated supporter and crucible above electronic scales.Along with crystal is constantly grown, material constantly is consumed in the crucible, and the reading of electronic scales can constantly descend.
Constantly gather the reading of electronic scales from Controlling System,, can calculate the crystalline speed of growth according to the rate of change of reading.The combined with intelligent pid algorithm is regulated furnace body temperature, heating power, and parameters such as pull rate can realize the crystalline isodiametric growth.
This monitoring module comprises that the electronic scales reading error that intermediate frequency coil heating power fluctuation is produced carries out filtering filter unit.Because weighting method requires to adopt contactless intermediate frequency coil electromagnetic coupled heating down, and the electromagnetic coupled heating can produce the effect of electromagnetic force to metallic crucible, so the acute variation of heating power can cause weighing results that corresponding big ups and downs take place.Filter unit can monitor power change and the weighing-up wave variation, takes place in case find these situations, then provides prompting, stops the crystal preparation.
Also comprise alarm module and a plurality of temperature sensor that is used to detect crucible temperature, when the temperature that detects crucible when temperature sensor goes beyond the limit of temperature, this alarm module is realized reporting to the police, thereby causes damaging or taking place other danger to avoid because the Heating temperature of crucible is too high.
Because down weighting method uses the electromagnetic coupled mode to heat, it is very high that temperature can reach, the highest can reaching more than 2000 degrees centigrade, heating power is also bigger, generally several kilowatts to what time kilowatt between, so the security of system must be paid attention to.In case instrument breaks down, then may cause the body of heater local superheating and melt, produce danger such as fire.Alarm module designs at the needs that descend weighting method specially, uses a plurality of temperature sensors that the synchronous thermometric of multiple spot is carried out on the body of heater surface.In case find body of heater surface or other equipment (for example intermediate frequency power supply etc.) temperature too high (above 100 degrees centigrade), then send guard signal at once, the request staff handles, and closing device by force, the assurance security of system.This all has important effect in laboratory scientific research and industrial production, be the basis of safety in production.
This Controlling System comprise with each module transmit mutually parameter input-output unit, be used to judge whether the actual parameter of crystal growing process surpasses the parameter judging unit of default protection parameter area and the processing unit that each parameter is handled.
The present invention adopts high-precision temperature control module, realizes the stable control of temperature.What deserves to be mentioned is,, descend the reading of electronic scales in the weighting method can be subjected to the influence of middle frequency electromagnetic field interaction force owing to adopted contactless electromagnetic coupled heating.If the heating in medium frequency variable power is violent, can causes the electronic scales reading that corresponding the variation taken place, thereby can't correctly reflect the crystal growth situation.Therefore, select high-precision temperature control module for use, cooperate corresponding algorithm and suitable environmental parameter, guarantee that in the process of isodiametric growth of crystal, heating in medium frequency power is relatively stable, only in a very little scope, fluctuate.Simultaneously, for the electronic scales reading that Controlling System collects, take certain filtering algorithm, the influence that the heating power fluctuation is produced filters out.
Claims (10)
1. following Weighing method that is used for the photoelectric crystal isodiametric growth is characterized in that may further comprise the steps:
A. the heating module that provides and the crystalline crucible is housed, is used for the lifting rod of pulling crystal, crucible is heated, measure the temperature measurement module of crucible temperature in real time, the temperature control module of the temperature control heating module measured according to crucible, regulate the lifting rod pull rate lift module, regulate the lifting rod speed of rotation rotary module, residue crystal weight in the crucible is made the monitoring module of monitoring and the correcting module that residue crystal weight signal is revised;
B. heating module heats crucible, waits for the raw material fusing, and undergauge, shouldering, the isodiametric growth process of beginning pulling crystal;
C. enter the isodiametric growth stage, monitoring module monitors crystal weight variation in the crucible, and judges the crystalline growth velocity according to this;
D. monitoring module adopts intelligent PID algorithm to control the heating power of heating module, lift the pull rate of module and the speed of rotation of rotary module according to weight rate, meets goal-selling with the rate of change of keeping weight, until finishing crystal growth.
2. the following Weighing method that is used for the photoelectric crystal isodiametric growth according to claim 1, it is characterized in that: in this method, include the Controlling System that is connected with each module by bus and communication protocol, realize the real-time control of Controlling System each module.
3. the following Weighing method that is used for the photoelectric crystal isodiametric growth according to claim 2 is characterized in that: each module is equipped with a control submodule that is used to control and safeguard this module, and control submodule and Controlling System are passed through bus exchanging data.
4. the following Weighing method that is used for the photoelectric crystal isodiametric growth according to claim 3, it is characterized in that: this rotary module also comprises rotating machine and driving circuit thereof, rotating machine forms feedback voltage with its actual speed and feeds back to the control submodule, when the control submodule detects actual speed and preset value not simultaneously, then the rotating machine rotating speed is adjusted in the preset value.
5. the following Weighing method that is used for the photoelectric crystal isodiametric growth according to claim 3, it is characterized in that: this lifts module and also comprises and lift motor and driving circuit thereof, lift to be provided with in the control submodule of module and be used to monitor the grating chi that lifts displacement motor, when the control submodule detects actual pull rate and preset value not simultaneously, then will lift motor speed and be adjusted in the preset value.
6. the following Weighing method that is used for the photoelectric crystal isodiametric growth according to claim 1 is characterized in that: this temperature control module is that tolerance range is less than or equal to 0.1 degree centigrade temperature control instrument, and this temperature measurement module is a thermopair.
7. the following Weighing method that is used for the photoelectric crystal isodiametric growth according to claim 1, it is characterized in that: this heating module comprises crucible is carried out the intermediate frequency coil of contactless heating and is connected to the intermediate frequency power supply of intermediate frequency coil, this monitoring module comprises that being located at the crucible below is used for the electronic scales of crystal weight in the weighing body of heater and the MCU driving circuit that is connected with electronic scales, and this crucible is located at and is pressed on the heat insulated supporter of being located on the electronic scales
8. the following Weighing method that is used for the photoelectric crystal isodiametric growth according to claim 7 is characterized in that: this monitoring module comprises that the electronic scales reading error that intermediate frequency coil heating power fluctuation is produced carries out filtering filter unit.
9. the following Weighing method that is used for the photoelectric crystal isodiametric growth according to claim 1, it is characterized in that: also comprise alarm module and a plurality of temperature sensor that is used to detect crucible temperature, when the temperature that detects crucible when temperature sensor went beyond the limit of temperature, this alarm module was realized reporting to the police.
10. according to each described following Weighing method that is used for the photoelectric crystal isodiametric growth of claim 1 to 9, it is characterized in that: this Controlling System comprise with each module transmit mutually parameter input-output unit, be used to judge whether the actual parameter of crystal growing process surpasses the parameter judging unit of default protection parameter area and the processing unit that each parameter is handled.
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Cited By (10)
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CN102691098A (en) * | 2012-05-30 | 2012-09-26 | 苏州晶昇光电科技有限公司 | Growing method of sapphire crystal prepared by Kyropoulos method |
CN104141168A (en) * | 2014-07-31 | 2014-11-12 | 中国电子科技集团公司第二十六研究所 | Method for sapphire fairing direct growing |
CN105568369A (en) * | 2016-01-26 | 2016-05-11 | 中山大学 | Crystal feeding method for Czochralski method crystal growth and automatic crystal feeding equipment |
CN106757316A (en) * | 2017-04-07 | 2017-05-31 | 天通吉成机器技术有限公司 | A kind of single crystal growing furnace |
CN106801250A (en) * | 2017-01-13 | 2017-06-06 | 中山大学 | The method of feedback transistor growth conditions, crystal growth control method and control system |
CN108624952A (en) * | 2018-04-25 | 2018-10-09 | 上海翌波光电科技股份有限公司 | A kind of crystal growth control device and control method |
CN108736441A (en) * | 2018-04-25 | 2018-11-02 | 上海翌波光电科技股份有限公司 | A kind of crystal pull stove protection system and guard method |
CN112146729A (en) * | 2019-06-28 | 2020-12-29 | 北京铂阳顶荣光伏科技有限公司 | Device and method for detecting residual amount of raw materials in crucible |
CN114318506A (en) * | 2021-12-14 | 2022-04-12 | 连城凯克斯科技有限公司 | Single crystal growing furnace crucible promotes lower axle weighing device |
CN115467014A (en) * | 2022-10-10 | 2022-12-13 | 浙江求是半导体设备有限公司 | Monocrystalline silicon preparation device and method |
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CN2571773Y (en) * | 2002-10-14 | 2003-09-10 | 德清华莹电子有限公司 | Thermal field device for crystal growth |
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Patent Citations (1)
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CN2571773Y (en) * | 2002-10-14 | 2003-09-10 | 德清华莹电子有限公司 | Thermal field device for crystal growth |
Cited By (14)
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CN102691098A (en) * | 2012-05-30 | 2012-09-26 | 苏州晶昇光电科技有限公司 | Growing method of sapphire crystal prepared by Kyropoulos method |
CN104141168A (en) * | 2014-07-31 | 2014-11-12 | 中国电子科技集团公司第二十六研究所 | Method for sapphire fairing direct growing |
CN105568369B (en) * | 2016-01-26 | 2018-10-30 | 中山大学 | A kind of lower crystal method for method of crystal growth by crystal pulling and automatic lower brilliant equipment |
CN105568369A (en) * | 2016-01-26 | 2016-05-11 | 中山大学 | Crystal feeding method for Czochralski method crystal growth and automatic crystal feeding equipment |
CN106801250A (en) * | 2017-01-13 | 2017-06-06 | 中山大学 | The method of feedback transistor growth conditions, crystal growth control method and control system |
CN106801250B (en) * | 2017-01-13 | 2019-05-07 | 中山大学 | Method, crystal growth control method and the control system of feedback transistor growth conditions |
CN106757316A (en) * | 2017-04-07 | 2017-05-31 | 天通吉成机器技术有限公司 | A kind of single crystal growing furnace |
CN108736441A (en) * | 2018-04-25 | 2018-11-02 | 上海翌波光电科技股份有限公司 | A kind of crystal pull stove protection system and guard method |
CN108624952A (en) * | 2018-04-25 | 2018-10-09 | 上海翌波光电科技股份有限公司 | A kind of crystal growth control device and control method |
CN112146729A (en) * | 2019-06-28 | 2020-12-29 | 北京铂阳顶荣光伏科技有限公司 | Device and method for detecting residual amount of raw materials in crucible |
CN114318506A (en) * | 2021-12-14 | 2022-04-12 | 连城凯克斯科技有限公司 | Single crystal growing furnace crucible promotes lower axle weighing device |
CN114318506B (en) * | 2021-12-14 | 2022-12-06 | 连城凯克斯科技有限公司 | Single crystal growing furnace crucible promotes lower axle weighing device |
CN115467014A (en) * | 2022-10-10 | 2022-12-13 | 浙江求是半导体设备有限公司 | Monocrystalline silicon preparation device and method |
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Application publication date: 20100505 |