CN101697369B - Method for preparing isolation column of silicon-based organic light-emitting micro-display device - Google Patents
Method for preparing isolation column of silicon-based organic light-emitting micro-display device Download PDFInfo
- Publication number
- CN101697369B CN101697369B CN2009102186485A CN200910218648A CN101697369B CN 101697369 B CN101697369 B CN 101697369B CN 2009102186485 A CN2009102186485 A CN 2009102186485A CN 200910218648 A CN200910218648 A CN 200910218648A CN 101697369 B CN101697369 B CN 101697369B
- Authority
- CN
- China
- Prior art keywords
- silicon
- preparation
- organic light
- silicon chip
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention relates to a method for preparing an isolation column for a metal anode and a cathode of a silicon-based OLED, which is characterized by comprising the following steps: 1) magnetron-sputtering a layer of metal film on a silicon substrate; 2) coating optical photoresist to the silicon substrate plated with chromium/silver, and exposing and developing the silicon substrate by using a first photoetching plate; 3) performing ICP etching on the silicon substrate engraved with patterns; 4) removing the photoresist on the silicon substrate by ultrasonic waves; 5) quickly annealing the silicon substrate; 6) coating the photoresist to the silicon substrate; 7) pre-exposing the silicon substrate by using a second photoetching plate; 8) roasting the exposed silicon substrate by a hot plate; and 9) extensively exposing and developing the silicon substrate to form an isolation column structure with a reverse trapezoidal section, thus finishing the preparation of the isolation column for the metal anode and the cathode of the OLED. By the preparation method, firm and precise metal anode electrode patterns can be obtained, and best ohmic contact and superfine metal patterns can be obtained.
Description
Technical field
The invention belongs to the microelectronic component preparing technical field, the preparation method of particularly a kind of silicon-based organic light-emitting little demonstration (OLED) metal anode and cathode insulated column.
Background technology
OLED (Organic Light Emitting Display), organic light emitting display is meant organic semiconducting materials and luminescent material under electric field driven, injects and compoundly causes luminous phenomenon by charge carrier.OLED has active illuminating, no visual angle problem; In light weight, thickness is little; High brightness, high-luminous-efficiency; Luminescent material is abundant, easily realizes colored the demonstration; Response speed is fast, dynamic menu quality height; The serviceability temperature scope is wide; Can realize soft the demonstration; Technology is simple, and cost is low; A series of advantages such as shock resistance is strong progressively become the most potential a kind of display device, so it is had a wide range of applications in various fields by the desirable display that the expert is called future.
Domestic and international many companies, scientific research institution all drop into a large amount of manpower and materials and study at present.Organic electroluminescence device usually by first electrode (transparent anode), be deposited on luminescence medium on first electrode, second electrode (negative electrode) that is deposited on the luminescence medium constitutes.By the structures shape of passive OLED device its type of drive be the two-dimensional matrix addressing.Passive matrix shows it is a kind of straightforward procedure that realizes organic light emitting display.Need to realize the patterning of negative electrode in organic light emission passive matrix display spare, the general striated structure with trapezoidal or T section that adopts is as the patterning in the insulated column realization negative electrode course of processing.
At present after to make metallic pattern on silicon chip or other substrate all be to make figure by lithography by gluing, exposure, development etc. earlier again by evaporation, ultrasonicly peel off the preparation that waits the realization metallic pattern.The shortcoming of this operation mainly contains: one, do mask with photoresist and easily the evaporation chamber is polluted, the next continuation of influence is used, and also can make has certain impurity in the metal film, and is difficult to control its ratio of component, influences its conductive effect; Two, the metallic film of evaporation and the tack between the substrate are poor, can not form good contact electrode, and the figure of making comes off easily, therefore, can not do finer metal pattern configuration.
Summary of the invention
In view of above-mentioned existing problem, the invention provides a kind of method of on silicon chip or other substrate, making metallic pattern, and pass through the cathode insulated column of counter-rotating optical graving.The preparation method of the little demonstration of silicon-based organic light-emitting provided by the invention (OLED) metal anode and cathode insulated column, can access firm and the accurate metal anode electrode pattern of pattern, and obtain best ohmic contact, for the fine metal pattern provides a kind of manufacture method.
The present invention realizes that the technical scheme that above-mentioned purpose is taked is: the preparation method of the little demonstration of a kind of silicon-based organic light-emitting (OLED) metal anode and cathode insulated column is characterized in that: the preparation process of described this insulated column is as follows:
1) selects for use common clean silicon chip to do substrate, on substrate, use the method sputter layer of metal film of magnetron sputtering;
2) on the silicon chip of metal-plated membrane, be coated with the optics photoresist, with the exposure of front page photolithography plate, development;
3) silicon chip that is carved with figure is carried out the ICP etching;
4) silicon chip after the etching is placed the acetone vessel, and the photoresist on the ultrasonic wave removal silicon chip, obtain the metal anode figure, use alcohol and washed with de-ionized water clean again;
5) silicon chip that is coated with the metal anode figure is carried out short annealing;
6) resist coating above the metal anode figure;
7) expose to the sun before carrying out with the second edition photolithography plate;
8) silicon chip after will exposing places 140～150 ℃ of hot plates bakings;
9) silicon chip after will toasting carries out general exposing to the sun again, develops then, and the back of developing forms the cross section and is down trapezoidal insulated column structure, and so far, the preparation of silicon-based organic light-emitting micro-display device metal anode and cathode insulated column is finished.
Described substrate is common silicon chip, and thickness is 500～520 μ m.
Described magnetron sputtering metal film is chromium/silver-colored film or titanium/aluminium film, and sputter thickness is respectively: 11nm, 45nm or 10nm, 50nm.
Described step 2) photoresist is the AZ4620 optics etching glue in, and gluing thickness is 1000-1500nm.
To be etched in ICP power be 400W～500W to ICP in the described step 3), and RF power is 200W～250W, Cl
2Be 50mL/min～60mL/min with the Ar flow, cavity air pressure is to carry out etching 60s～90s under the condition of 3.99Pa～4.00Pa.
Short annealing is at 800 ℃～850 ℃ following short annealing 35s～40s in the described step 5).
Photoresist is the OSR photoresist in the described step 6), and glue is thick to be 1200～1400nm.
Described step 2) the front page time for exposure is 8～10 seconds in; The second edition prior exposure time is 8～10 seconds in the step 7).
The hot plate stoving time is 3～3.5 minutes in the described step 8).
General the exposing to the sun 35～40 seconds of silicon chip in the described step 9) after the baking.
Characteristics of the present invention are: the present invention has taked first plating one metal level, coats photoresist and make mask pattern by lithography on metal level, obtains metal pattern with the ICP etching again, has avoided doing earlier the mask pattern various negative effects that bring of evaporated metal layer more like this.And utilize magnetron sputtering earlier at clean silicon chip surface evaporation layer of metal layer, make metal that stronger tack be arranged, can do finer metal pattern; And the ratio of components of the easier control alloy of magnetron sputtering, and then obtain desirable anode work function, help the injection in hole.Utilize the ICP etching, make etching pattern more accurate.Can obtain best ohmic contact by short annealing, reduce contact resistance, and then improve the little demonstration of this silicon-based organic light-emitting (OLED) characteristics of luminescence.
Description of drawings
Fig. 1 to Fig. 5 is the technological operation schematic flow sheet of the inventive method.
Embodiment
The present invention will be further described below in conjunction with drawings and Examples, and following examples only are used to technical scheme of the present invention is described, are not limited to practical range of the present invention.
Embodiment 1
The preparation method of the little demonstration of this silicon-based organic light-emitting (OLED) metal anode and cathode insulated column, its operating procedure is:
The first step is sputter chromium/silver metal film 102 on silicon chip 101 surfaces;
As shown in Figure 1, select for use common clean silicon chip 101 to do substrate, substrate is common silicon chip, and the thickness of substrate is 500 μ m, difference sputter chromium/silver-colored 11nm on substrate, and 45nm obtains anode layer;
Coat photoresist on second silicon chip 101 of step after sputter has the anode layer of chromium/silver, and with the front page photolithography plate expose 8～10 seconds, develop, obtain metal anode mask pattern 103; Photoresist is the AZ4620 optics etching glue, and glue is thick to be 1000nm;
As shown in Figure 2, be coated with the AZ4620 optics etching glue on silicon chip 101, the thick 1000nm of glue obtains metal anode mask pattern 103 after overexposure, development;
The 3rd step ICP etching
As shown in Figure 3, the silicon chip 101 after developing being put into ICP etching machine, is 500W at ICP power, and RF power is 250W, Cl
2Be 60mL/min with the Ar flow, cavity air pressure is to carry out etching 60s under the condition of 3.99Pa;
The 4th step ultrasonic cleaning
As shown in Figure 4, placing the acetone vessel with the silicon chip after the ICP etching 101, and ultrasonic wave removes the photoresist on silicon chip 101 coats of metal, obtains anode electrode figure 104, uses alcohol and washed with de-ionized water clean again;
The 5th step short annealing
The silicon chip 101 that has the metal electrode figure after cleaning is put into quick anneal oven, at 850 ℃ of following short annealing 35s;
The 6th step gluing
Resist coating above the metal anode figure; Photoresist is the OSR photoresist, and glue is thick to be 1200nm;
The exposure of the 7th step
Expose to the sun 8～10 seconds time for exposure before carrying out with the second edition photolithography plate again;
The baking of the 8th step
Silicon chip after the exposure is placed 140～150 ℃ of hot plate bakings 3～3.5 minutes;
The 9th step, the general development of exposing to the sun obtained cathode insulated column figure 105
As shown in Figure 5, adopt OSR photoresist counter-rotating photoetching on the surface of metallic film anode electrode figure 104, after developing, obtain cathode insulated column figure 105, finish the preparation of the little demonstration of silicon-based organic light-emitting (OLED) metal anode and cathode insulated column.
Embodiment 2
Described this insulated column also can plate other metal, and its concrete operations step is:
1) select for use common clean silicon chip 101 to do substrate, substrate is common silicon chip, and thickness is 520 μ m; On substrate, use magnetron sputtering one deck titanium/aluminum metal film 102; Sputtered titanium/aluminum metal film thickness is respectively: 10nm, 50nm;
2) on the silicon chip 101 that is coated with titanium/aluminium, be coated with the optics photoresist, with front page photolithography plate exposure 8～10 seconds, develop, obtain metal anode mask pattern 103; Photoresist is the AZ4620 optics etching glue, and glue is thick to be 1200nm;
3) silicon chip 101 after will developing is placed in the ICP etching machine, is 400W at ICP power, and RF power is 200W, Cl
2With the Ar flow be 50mL/min, cavity air pressure is to carry out etching 70s under the condition of 4.00Pa;
4) silicon chip after the etching 101 is placed the acetone vessel, and the photoresist on the ultrasonic wave removal silicon chip 101, obtain metal anode mask pattern 104, use alcohol and washed with de-ionized water clean again;
5) silicon chip 101 that has the metal electrode figure after will cleaning is put into quick anneal oven, at 800 ℃ of following short annealing 40s.
6) resist coating above the metal anode figure; Photoresist is the OSR photoresist, and glue is thick to be 1300nm;
7) expose to the sun 8～10 seconds time for exposure before carrying out with the second edition photolithography plate;
8) silicon chip 101 after will exposing places 140～150 ℃ of hot plates bakings 3～3.5 minutes;
9) silicon chip 101 after will toasting carries out general exposing to the sun 35～40 seconds again, develops then, and the back of developing forms the cross section and is down trapezoidal cathode isolation rod structure 105, and so far, the preparation of OLED metal anode and cathode insulated column is finished.
Embodiment 3
1) select for use common clean silicon chip 101 to do substrate, substrate is common silicon chip, and thickness is 500 μ m; On substrate, use magnetron sputtering one deck titanium/aluminum metal film 102; Sputtered titanium/aluminum metal film thickness is respectively: 10nm, 50nm;
2) on the silicon chip 101 that is coated with titanium/aluminium, be coated with the optics photoresist, with front page photolithography plate exposure 8～10 seconds, develop, obtain metal anode mask pattern 103; Photoresist is the AZ4620 optics etching glue, and glue is thick to be 1500nm;
3) silicon chip 101 after will developing is placed in the ICP etching machine, is 450W at ICP power, and RF power is 200W, Cl
2With the Ar flow be 55mL/min, cavity air pressure is to carry out etching 90s under the condition of 4.00Pa;
4) silicon chip after the etching 101 is placed the acetone vessel, and the photoresist on the ultrasonic wave removal silicon chip 101, obtain metal anode electrode pattern 104, use alcohol and washed with de-ionized water clean again;
5) silicon chip 101 that has the metal electrode figure after will cleaning is put into quick anneal oven, at 800 ℃ of following short annealing 40s.
6) resist coating above the metal anode figure; Photoresist is the OSR photoresist, and glue is thick to be 1400nm;
7) expose to the sun 8～10 seconds time for exposure before carrying out with the second edition photolithography plate;
8) silicon chip 101 after will exposing places 140～150 ℃ of hot plates bakings 3～3.5 minutes;
9) silicon chip 101 after will toasting carries out general exposing to the sun 35～40 seconds again, develops then, and the back of developing forms the cross section and is down trapezoidal insulated column figure 105, and so far, the preparation of OLED metal anode and cathode insulated column is finished.
The embodiment 3 just parameter of step 1)～step 3) is different with embodiment 1,2, and other step is all identical with embodiment 1,2.
The present invention coats photoresist and makes mask pattern by lithography on metal level, obtain metal pattern with the ICP etching again, has avoided doing earlier the mask pattern various negative effects that bring of evaporated metal layer more like this.And utilize magnetron sputtering earlier at clean silicon chip surface evaporation layer of metal layer, make metal that stronger tack be arranged, can do finer metal pattern, certain pollution has been avoided in the evaporation chamber, help next evaporation.
Secondly magnetron sputtering ratio of components of easier control alloy that becomes, and then obtain desirable anode work function, and make to form good Ohmic contact between metal and the silicon chip easily, help the injection in hole, and the tack of metal level is strong, is difficult for producing for finer pattern coming off.
Utilize the ICP etching, make etching pattern more accurate.Can obtain best ohmic contact by short annealing, reduce contact resistance, and then improve the little demonstration of this silicon-based organic light-emitting (OLED) characteristics of luminescence.
Claims (10)
1. the preparation method of an isolation column of silicon-based organic light-emitting micro-display device, it is characterized in that: the preparation process of described this insulated column is as follows:
1) selects for use common clean silicon chip to do substrate, on substrate, use the method sputter layer of metal film of magnetron sputtering;
2) on the silicon chip of metal-plated membrane, be coated with the optics photoresist, with the exposure of front page photolithography plate, development;
3) silicon chip that is carved with figure is carried out the ICP etching;
4) silicon chip after the etching is placed the acetone vessel, and the photoresist on the ultrasonic wave removal silicon chip, obtain the metal anode figure, use alcohol and washed with de-ionized water clean again;
5) silicon chip that is coated with the metal anode figure is carried out short annealing;
6) resist coating above the metal anode figure;
7) expose to the sun before carrying out with the second edition photolithography plate;
8) silicon chip after will exposing places 140～150 ℃ of hot plates bakings;
9) silicon chip after will toasting carries out general exposing to the sun again, develops then, and the back of developing forms the cross section and is down trapezoidal insulated column structure, and so far, the preparation of silicon-based organic light-emitting micro-display device metal anode and cathode insulated column is finished.
2. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: described substrate is common silicon chip, thickness is 500～520 μ m.
3. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: described magnetron sputtering metal film is chromium/silver-colored film or titanium/aluminium film, the thickness of sputter chromium is 11nm, the thickness of sputtering silver is 45nm, the thickness of sputtered titanium is 10nm, and the thickness of sputtered aluminum is 50nm.
4. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1 is characterized in that: photoresist gluing thickness is 1000-1500nm described step 2).
5. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1 is characterized in that: to be etched in ICP power be 400W～500W to ICP in the described step 3), and RF power is 200W～250W, Cl
2Be 50mL/min～60mL/min with the Ar flow, cavity air pressure is to carry out etching 60s～90s under the condition of 3.99Pa～4.00Pa.
6. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: described short annealing is at 800 ℃～850 ℃ following short annealing 35s～40s.
7. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: photoresist is the OSR photoresist in the described step 6), glue is thick to be 1200～1400nm.
8. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: described front page time for exposure and second edition prior exposure time are 8～10 seconds.
9. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: described hot plate stoving time is 3～3.5 minutes.
10. the preparation method of a kind of isolation column of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: the silicon chip after the described baking is general to expose to the sun 35～40 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102186485A CN101697369B (en) | 2009-10-29 | 2009-10-29 | Method for preparing isolation column of silicon-based organic light-emitting micro-display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102186485A CN101697369B (en) | 2009-10-29 | 2009-10-29 | Method for preparing isolation column of silicon-based organic light-emitting micro-display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101697369A CN101697369A (en) | 2010-04-21 |
| CN101697369B true CN101697369B (en) | 2011-02-16 |
Family
ID=42142462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102186485A Expired - Fee Related CN101697369B (en) | 2009-10-29 | 2009-10-29 | Method for preparing isolation column of silicon-based organic light-emitting micro-display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101697369B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881836A (en) * | 2012-09-27 | 2013-01-16 | 彩虹集团公司 | Cathode isolating device for organic light emitting device and manufacturing method for cathode isolating device |
| CN111063828A (en) * | 2019-12-31 | 2020-04-24 | 安徽熙泰智能科技有限公司 | Silicon-based Micro OLED Micro-display anode and preparation method thereof |
| CN112436038A (en) * | 2020-11-23 | 2021-03-02 | 安徽熙泰智能科技有限公司 | Novel pixel definition layer of silicon-based Micro OLED Micro-display device and preparation method thereof |
| CN113284931B (en) * | 2021-04-02 | 2023-03-10 | 安徽熙泰智能科技有限公司 | Preparation method of improved pixel definition layer of silicon-based OLED micro-display |
-
2009
- 2009-10-29 CN CN2009102186485A patent/CN101697369B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101697369A (en) | 2010-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101697369B (en) | Method for preparing isolation column of silicon-based organic light-emitting micro-display device | |
| AU2010202844B2 (en) | Method for etching a see-through thin film solar module | |
| CN104485279A (en) | Transparent electrode based on metal nanometer grid and preparing method of transparent electrode | |
| CN108055790B (en) | A kind of circuit board and preparation method thereof and application | |
| CN109887816A (en) | A kind of reflective field emission electron light source device and preparation method | |
| CN104411103B (en) | Manufacturing method of graphical thick film silver paste conducting layer | |
| CN103700784A (en) | Patterned electrode preparation method | |
| CN106926559A (en) | Transfer substrate and preparation method thereof, OLED preparation method | |
| CN113140644A (en) | Single-sided or double-sided solar cell patterned mask and preparation method of solar cell | |
| CN100446632C (en) | Production of isolating column of organic electroluminescent device | |
| CN105470282A (en) | Pixel-bank-free TFT-OLED and preparation method thereof | |
| CN100530674C (en) | Organic electroluminescent display, and prepartion method | |
| CN110323240A (en) | A kind of sliceable infrared micro-bridge structure resistor matrix | |
| CN103117333A (en) | Transparent electrode manufacturing method improving device yield rate | |
| CN100496175C (en) | A silicon-based organic luminescence micro-display metal anode and cathode insulation pole preparation method | |
| CN104835708B (en) | Preparation method of graphene oxide field emission flat plate display instrument | |
| CN115332238A (en) | Ultra-high resolution Micro-LED display device and metal film bonding method thereof | |
| CN112242457A (en) | Patterning method of ITO film for double-sided heterojunction photovoltaic cell | |
| CN114068732A (en) | Solar cell electrode and preparation method thereof | |
| KR100408768B1 (en) | ion beam e-beam have a ion beam assisted e-beam evaporator made platictype display panel a manufacturing process | |
| CN109686861A (en) | Sleeved discrete control patterning organic electroluminescence device of one kind and preparation method thereof | |
| CN100372041C (en) | Method for manufacturing component figure, distributing structure, electronic source and image display device | |
| CN114300636B (en) | Anode structure, anode structure manufacturing method and display | |
| CN107403857A (en) | A kind of method for preparing patterned sapphire substrate for improving LED luminance | |
| KR100352975B1 (en) | Electrodes Of Plasma Display Panel And Fabrication Method Thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110216 Termination date: 20151029 |
|
| EXPY | Termination of patent right or utility model |