CN101696296B - Semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe and preparation method thereof - Google Patents
Semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe and preparation method thereof Download PDFInfo
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- CN101696296B CN101696296B CN200910185038XA CN200910185038A CN101696296B CN 101696296 B CN101696296 B CN 101696296B CN 200910185038X A CN200910185038X A CN 200910185038XA CN 200910185038 A CN200910185038 A CN 200910185038A CN 101696296 B CN101696296 B CN 101696296B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 44
- 229920000098 polyolefin Polymers 0.000 claims abstract description 37
- 239000011347 resin Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 239000003063 flame retardant Substances 0.000 claims abstract description 21
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 16
- 239000006229 carbon black Substances 0.000 claims abstract description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 18
- 238000004132 cross linking Methods 0.000 claims description 17
- 239000003381 stabilizer Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 239000003963 antioxidant agent Substances 0.000 claims description 15
- 230000003078 antioxidant effect Effects 0.000 claims description 15
- 239000012752 auxiliary agent Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 239000012188 paraffin wax Substances 0.000 claims description 14
- 239000000779 smoke Substances 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 10
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 9
- 229920002121 Hydroxyl-terminated polybutadiene Polymers 0.000 claims description 9
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical group CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 claims description 9
- 229920001971 elastomer Polymers 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 9
- 235000019260 propionic acid Nutrition 0.000 claims description 9
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 9
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 9
- 150000002910 rare earth metals Chemical class 0.000 claims description 9
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical group [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 claims description 9
- 206010070834 Sensitisation Diseases 0.000 claims description 8
- 230000008313 sensitization Effects 0.000 claims description 8
- 235000019241 carbon black Nutrition 0.000 claims description 5
- WHHGLZMJPXIBIX-UHFFFAOYSA-N decabromodiphenyl ether Chemical group BrC1=C(Br)C(Br)=C(Br)C(Br)=C1OC1=C(Br)C(Br)=C(Br)C(Br)=C1Br WHHGLZMJPXIBIX-UHFFFAOYSA-N 0.000 claims description 5
- -1 pentaerythritol ester Chemical class 0.000 claims description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract 6
- 238000005536 corrosion prevention Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000003756 stirring Methods 0.000 description 11
- 238000001816 cooling Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000006084 composite stabilizer Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 229940059574 pentaerithrityl Drugs 0.000 description 8
- 238000005096 rolling process Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000005469 granulation Methods 0.000 description 5
- 230000003179 granulation Effects 0.000 description 5
- AQPHBYQUCKHJLT-UHFFFAOYSA-N 1,2,3,4,5-pentabromo-6-(2,3,4,5,6-pentabromophenyl)benzene Chemical group BrC1=C(Br)C(Br)=C(Br)C(Br)=C1C1=C(Br)C(Br)=C(Br)C(Br)=C1Br AQPHBYQUCKHJLT-UHFFFAOYSA-N 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003446 memory effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
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Abstract
The invention relates to a thermal shrinkage pipe, in particular to a semiconductor low-voltage flame-retardant single-wall thermal shrinkage pipe and a preparation method thereof. The semiconductor low-voltage flame-retardant single-wall thermal shrinkage pipe is made of wall materials which comprise the following components in parts by mass: 60 parts of polyolefin mixed resin, 10 parts of graphitized carbon black, 10 parts addition agent and 30 parts of flame retardant. The preparation method comprises the following steps of: preparing the inner wall material and the outer wall material of the semiconductor low-voltage flame-retardant single-wall thermal shrinkage pipe, extruding, irradiating, expanding and forming. Compared with a traditional shrinkage pipe, the invention has the technical characteristics that the wall materials are flame-retardant and can be applied to 35kV high voltage; in addition, the semiconductor low-voltage flame-retardant single-wall thermal shrinkage pipe not only has all service performances of a common thermal shrinkage pipe, but also has the performance such as waterproofness, sealability, dampproofness, corrosion prevention, and the like, fully meets the environment protection requirement required in ROHS instruction made by European Union and other countries and has the advantages of low temperature shrinkage, stable expansion by threefold to fourfold, low longitudinal shrinkage ratio, and the like.
Description
One, technical field:
The present invention relates to a kind of heat-shrinkable tube, be specifically related to a kind of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe and preparation method thereof.
Two, background technology
The pyrocondensation product is from being born till now; tempo be we can say and advanced by leaps and bounds; Application Areas is constantly widened, and is mainly used in insulation protection at the beginning of the pyrocondensation products production, is widely used in Aeronautics and Astronautics, boats and ships, automobile, household electrical appliances, communication and field of petrochemical industry till now.The pyrocondensation product plays effects such as anticorrosion, the against shock dislocation of sealed damp-proof, waterproof and circuit to cable junction and bifurcation, therefore both required heat-shrinkable tube that good physicals and electrical property are arranged, as performances such as wearability, shock resistance, insulation strength height; Requiring again simultaneously has good chemical property, as erosion resistance and weathering resistance etc.But common heat-shrink tube can't satisfy these requirements simultaneously, this has just proposed a new problem to us, that be exactly must exploitation be a kind of can waterproof sealing, a kind of novel pyrocondensation product of certain mechanical strength, good electrical properties and chemical property is arranged again.
But it is less to use 35kV hot high pressure compression material, the invention provides a kind of material contracting with heat that can work under the 35kV high pressure conditions.
Three, summary of the invention:
Technical purpose
The purpose of this invention is to provide a kind of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe; this heat-shrink tube can be under the 35kV high pressure; keep excellent mechanical intensity, fire-retardant, electrical property and chemical property characteristics, and have good economic benefit and environmental protection benefit, be fit to apply on a large scale.
Technical scheme
The present invention has following technical scheme to finish: a kind of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe is made up of the wall material, and according to mass fraction, its mesospore material is made up of for 30 parts 60 parts of polyolefine hybrid resins, 10 parts of graphitized carbon blacks, 10 parts of auxiliary agents and fire retardant; Described fire retardant is a decabromodiphenyl oxide.
By mass percentage: described polyolefine hybrid resin is the polyolefine hybrid resin that 1～30%EVA630,1～20%EVA421,20～50%EVA283 and four kinds of polyolefine material melt blendings of 10～30%EVA220 make;
Described auxiliary agent is made up of paraffin, antioxidant, anti copper agent, processing stabilizers and sensitization crosslinking coagent; Antioxidant four (β-(3 wherein, the 5-di-tert-butyl-hydroxy phenyl) tetramethylolmethane 1-3 part propionic acid), anti copper agent MDA-1024 (hydroxy-terminated polybutadienes vinyl cyanide fluid rubber) 0.5-1 part, processing stabilizers rare earth composite stabilizer (REC-LS-D or REC-LS-F) 0.02-2 part; Smoke suppressor zinc borate 2-4 part, sensitization crosslinking coagent TMP (TriMethylolPropane(TMP)) 1-2 part, surplus is a paraffin;
A kind of preparation method of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe:
A, the preparation of described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe external wall material:
The polyolefine hybrid resin is 50 parts of the polyolefine hybrid resins that will make according to mass percent: 1～30%EVA630,1～20%EVA421,20～50%EVA283 and four kinds of polyolefine material melt blendings of 10～30%EVA220; 10 parts of described auxiliary agents, antioxidant four (β-(3 wherein, the 5-di-tert-butyl-hydroxy phenyl) pentaerythritol ester 1-3 part propionic acid), anti copper agent MDA-1024 (hydroxy-terminated polybutadienes vinyl cyanide fluid rubber) 0.5-1 part, processing stabilizers rare earth composite stabilizer (REC-LS-D or REC-LS-F) 0.02-2 part; Smoke suppressor zinc borate 2-4 part is changed crosslinking coagent TMP (TriMethylolPropane(TMP)) 1-2 part, and surplus is a paraffin; Described fire retardant is 30 parts of decabromodiphenyl oxides.
Above-mentioned raw material adding Banbury mixer or height are stirred machine; stirring the back adds in the twin-screw mixer machine; under 140～160 ℃ temperature condition; through fully stirring and banburying; screw speed 125rpm, 110～135 ℃ of melting temperatures fully merge each component; be prepared into the external wall material of described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe then through the tablets press granulation, standby.
B, extrude:
The wall material of steps A preparation is added in the forcing machine, through the fuselage heating and melting, back extrusion moulding from extruder head, through the tank cooling, wind-force dries up then, behind the surperficial lettering, receives on all rotating disks through tractor;
C, irradiation:
All rotating disks are put on the pay off rack,, introduce in the radiation chamber through the adjustable tension bracket of overtension, the present invention adopts irradiation device for electronic accelerator, irradiation dose is 12Mrad, to the twin wall emitter lateral work in-process of making circulate irradiation and cooling, is 30～60 circles at the number of times of exposure cell's internal recycle irradiation.Passing through the wire coiler rolling on all rotating disks;
D, expansion:
The single wall heat-shrink tube pipe that irradiation is good is placed on the pay off rack, adjust tension force, introduce in the dilator, add through overbalance, after the twin wall emitter lateral work in-process reach 100 ℃ of technological temperatures, introduce Standard Module and expand and cool off, introduce tank then and fully cool off, product temperature is reduced to room temperature, and rolling is packaged into described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe finished product then.
The main production equipments inventory
| Machinery or device name | Model specification | The country origin place of production | Rated output |
| Rumbatron | DD | Chinese Shanghai | 2.0Mev |
| Multi-functional irradiation transmission system | / | Chinese Shanghai | 80KW |
| The granulation Banbury mixer | 75L | Chinese Shanghai | 150KW |
| Forcing machine | SJ-120 | The China Zhangjiagang | 123KW |
| Twin screw extruder | TE-70 | Nanjing of China | 75KW |
Principle: because cross-linking radiation changes polyolefinic molecular structure, this variation makes polyolefine have memory effect under certain condition.Heat-shrinkable tube utilizes the principle of this memory effect just, behind the heat-shrinkable tube work in-process cross-linking radiation, with behind its expansion cooling and shaping, is exactly finished product after the heating.In use, the heating back is because memory effect retracts to the preceding state of expansion again.
Beneficial effect:
1, wall material: because the wall material adopts hybrid resin, this hybrid resin can be in 35kV high pressure works better.
2, remedied the shortcoming that the ordinary hot collapsible tube can not waterproof sealing.This product possesses whole use propertieies of ordinary hot collapsible tube fully, has also possessed performances such as waterproof sealing moisture-proof anticorrosive simultaneously.
3, this product satisfies the environmental requirement of state ROHS such as European Union instruction fully, has that low temperature shrinks, three times to four times stable expansions, has advantages such as vertical shrinking percentage is low.
Four, embodiment
Embodiment 1
A kind of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe is made up of the wall material, and according to mass fraction, its mesospore material is made up of for 30 parts 60 parts of polyolefine hybrid resins, 10 parts of graphitized carbon blacks, 10 parts of auxiliary agents and fire retardant; Described fire retardant is a decabromodiphenyl oxide.
By mass percentage: described polyolefine hybrid resin is the polyolefine hybrid resin that 1～30%EVA630,1～20%EVA421,20～50%EVA283 and four kinds of polyolefine material melt blendings of 10～30%EVA220 make;
Press mass fraction, described auxiliary agent is made up of paraffin, antioxidant, anti copper agent, processing stabilizers and sensitization crosslinking coagent, wherein antioxidant four (β-(3, the 5-di-tert-butyl-hydroxy phenyl) propionic acid) tetramethylolmethane 1-3 part; Anti copper agent MDA-1024 (hydroxy-terminated polybutadienes vinyl cyanide fluid rubber) 0.5-1 part, processing stabilizers rare earth composite stabilizer (REC-LS-D or REC-LS-F) 0.02-2 part; Smoke suppressor zinc borate 2-4 part is changed crosslinking coagent TMP (TriMethylolPropane(TMP)) 1-2 part, and surplus is a paraffin;
A kind of preparation method of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe:
A, the preparation of described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe external wall material:
The polyolefine hybrid resin is 50 parts of the polyolefine hybrid resins that will make according to mass percent: 1～30%EVA630,1～20%EVA421,20～50%EVA283 and four kinds of polyolefine material melt blendings of 10～30%EVA220.10 parts of described first auxiliary agents, wherein antioxidant four (β-(3, the 5-di-tert-butyl-hydroxy phenyl) propionic acid) pentaerythritol ester 1-3 part; Anti copper agent MDA-1024 (hydroxy-terminated polybutadienes vinyl cyanide fluid rubber) 0.5-1 part; Processing stabilizers rare earth composite stabilizer (REC-LS-D or REC-LS-F) 0.02-2 part; Smoke suppressor zinc borate 2-4 part; Change crosslinking coagent TMP (TriMethylolPropane(TMP)) 1-2 part; Surplus is a paraffin; Described fire retardant is 30 parts of decabromodiphenyl oxides.
Above-mentioned raw materials is added Banbury mixer or height stirs machine; stirring the back adds in the twin-screw mixer machine; under 140～160 ℃ temperature condition; through fully stirring and banburying; screw speed 125rpm, 110～135 ℃ of melting temperatures fully merge each component; be prepared into the external wall material of described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe then through the tablets press granulation, standby.
B, extrude:
The wall material of steps A preparation is added in the forcing machine, and through extrusion moulding from extruder head behind the fuselage heating and melting, through the tank cooling, wind-force dries up then, behind the surperficial lettering, receives on all rotating disks through tractor;
C, irradiation:
All rotating disks are put on the pay off rack,, introduce in the radiation chamber through the adjustable tension bracket of overtension, the present invention adopts irradiation device for electronic accelerator, irradiation dose is 12Mrad, to the twin wall emitter lateral work in-process of making circulate irradiation and cooling, is 30～60 circles at the number of times of exposure cell's internal recycle irradiation.Passing through the wire coiler rolling on all rotating disks;
D, expansion:
The single wall heat-shrink tube pipe that irradiation is good is placed on the pay off rack, adjust tension force, introduce in the dilator, add through overbalance, after the twin wall emitter lateral work in-process reach 100 ℃ of technological temperatures, introduce Standard Module and expand and cool off, introduce tank then and fully cool off, product temperature is reduced to room temperature, and rolling is packaged into described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe finished product then.
Embodiment 2
A kind of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe is made up of the wall material, and according to mass fraction, its mesospore material is made up of for 30 parts 60 parts of polyolefine hybrid resins, 10 parts of graphitized carbon blacks, 10 parts of auxiliary agents and fire retardant; Described fire retardant is a decabromodiphenyl oxide.
By mass percentage: described polyolefine hybrid resin is the polyolefine hybrid resin that 15%EVA630,20%EVA421,45%EVA283 and four kinds of polyolefine material melt blendings of 20%EVA220 make;
Press mass fraction, described auxiliary agent is made up of paraffin, antioxidant, anti copper agent, processing stabilizers and sensitization crosslinking coagent, wherein antioxidant four (β-(3, the 5-di-tert-butyl-hydroxy phenyl) propionic acid) tetramethylolmethane 1-3 part; Anti copper agent MDA-1024 (hydroxy-terminated polybutadienes vinyl cyanide fluid rubber) 0.5-1 part, processing stabilizers rare earth composite stabilizer (REC-LS-D or REC-LS-F) 0.02-2 part; Smoke suppressor zinc borate 2-4 part is changed crosslinking coagent TMP (TriMethylolPropane(TMP)) 1-2 part, and surplus is a paraffin;
A kind of preparation method of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe:
A, the preparation of described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe external wall material:
The polyolefine hybrid resin is 50 parts of the polyolefine hybrid resins that will make according to mass percent: 15%EVA630,20%EVA421,45%EVA283 and four kinds of polyolefine material melt blendings of 20%EVA220.10 parts of described auxiliary agents, wherein antioxidant four (β-(3, the 5-di-tert-butyl-hydroxy phenyl) propionic acid) pentaerythritol ester 1-3 part; Anti copper agent MDA-1024 (hydroxy-terminated polybutadienes vinyl cyanide fluid rubber) 0.5-1 part; Processing stabilizers rare earth composite stabilizer (REC-LS-D or REC-LS-F) 0.02-2 part; Smoke suppressor zinc borate 2-4 part; Change crosslinking coagent TMP (TriMethylolPropane(TMP)) 1-2 part; Surplus is a paraffin; Described fire retardant is 30 parts of decabromodiphenyl oxides.
Above-mentioned raw materials is added Banbury mixer or height stirs machine; stirring the back adds in the twin-screw mixer machine; under 140～160 ℃ temperature condition; through fully stirring and banburying; screw speed 125rpm, 110～135 ℃ of melting temperatures fully merge each component; be prepared into the external wall material of described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe then through the tablets press granulation, standby.
B, extrude:
The wall material wall material of steps A preparation is added in the forcing machine, and through extrusion moulding from extruder head behind the fuselage heating and melting, through the tank cooling, wind-force dries up then, behind the surperficial lettering, receives on all rotating disks through tractor;
C, irradiation:
All rotating disks are put on the pay off rack,, introduce in the radiation chamber through the adjustable tension bracket of overtension, the present invention adopts irradiation device for electronic accelerator, irradiation dose is 12Mrad, to the twin wall emitter lateral work in-process of making circulate irradiation and cooling, is 30～60 circles at the number of times of exposure cell's internal recycle irradiation.Passing through the wire coiler rolling on all rotating disks;
D, expansion:
The single wall heat-shrink tube pipe that irradiation is good is placed on the pay off rack, adjust tension force, introduce in the dilator, add through overbalance, after the twin wall emitter lateral work in-process reach 100 ℃ of technological temperatures, introduce Standard Module and expand and cool off, introduce tank then and fully cool off, product temperature is reduced to room temperature, and rolling is packaged into described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe finished product then.
Embodiment 3
A kind of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe is made up of the wall material, and according to mass fraction, its mesospore material is made up of for 30 parts 60 parts of polyolefine hybrid resins, 10 parts of graphitized carbon blacks, 10 parts of auxiliary agents and fire retardant; Described fire retardant is a decabromodiphenyl oxide.
By mass percentage: described polyolefine hybrid resin is the polyolefine hybrid resin that 30%EVA630,20%EVA421,40%EVA283 and four kinds of polyolefine material melt blendings of 10%EVA220 make;
Press mass fraction, described auxiliary agent is made up of paraffin, antioxidant, anti copper agent, processing stabilizers and sensitization crosslinking coagent, wherein antioxidant four (β-(3, the 5-di-tert-butyl-hydroxy phenyl) propionic acid) tetramethylolmethane 1-3 part; Anti copper agent MDA-1024 (hydroxy-terminated polybutadienes vinyl cyanide fluid rubber) 0.5-1 part, processing stabilizers rare earth composite stabilizer (REC-LS-D or REC-LS-F) 0.02-2 part; Smoke suppressor zinc borate 2-4 part is changed crosslinking coagent TMP (TriMethylolPropane(TMP)) 1-2 part, and surplus is a paraffin;
A kind of preparation method of semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe:
A, the preparation of described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe external wall material:
The polyolefine hybrid resin is 50 parts of the polyolefine hybrid resins that will make according to mass percent: 30%EVA630,20%EVA421,40%EVA283 and four kinds of polyolefine material melt blendings of 10%EVA220.10 parts of described auxiliary agents, wherein antioxidant four (β-(3, the 5-di-tert-butyl-hydroxy phenyl) propionic acid) pentaerythritol ester 1-3 part; Anti copper agent MDA-1024 (hydroxy-terminated polybutadienes vinyl cyanide fluid rubber) 0.5-1 part; Processing stabilizers rare earth composite stabilizer (REC-LS-D or REC-LS-F) 0.02-2 part; Smoke suppressor zinc borate 2-4 part; Change crosslinking coagent TMP (TriMethylolPropane(TMP)) 1-2 part; Surplus is a paraffin; Described fire retardant is 30 parts of decabromodiphenyl oxides.
Above-mentioned raw materials is added Banbury mixer or height stirs machine; stirring the back adds in the twin-screw mixer machine; under 140～160 ℃ temperature condition; through fully stirring and banburying; screw speed 125rpm, 110～135 ℃ of melting temperatures fully merge each component; be prepared into the external wall material of described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe then through the tablets press granulation, standby.
B, extrude:
The inner wall material of the external wall material of steps A preparation and step B preparation is added into respectively in the two extruders that an angle of 90 degrees puts, through extrusion moulding from shared extruder head behind the fuselage heating and melting, form bilayer structure, then through the tank cooling, wind-force dries up, behind the lettering of surface, receive on all rotating disks through tractor; The quality amount ratio of external wall material and Nell wall material: 1: 1～3: 1;
C, irradiation:
All rotating disks are put on the pay off rack,, introduce in the radiation chamber through the adjustable tension bracket of overtension, the present invention adopts irradiation device for electronic accelerator, irradiation dose is 12Mrad, to the twin wall emitter lateral work in-process of making circulate irradiation and cooling, is 30～60 circles at the number of times of exposure cell's internal recycle irradiation.Passing through the wire coiler rolling on all rotating disks;
D, expansion:
The single wall heat-shrink tube that irradiation is good is placed on the pay off rack, adjust tension force, introduce in the dilator, add through overbalance, after the twin wall emitter lateral work in-process reach 100 ℃ of technological temperatures, introduce Standard Module and expand and cool off, introduce tank then and fully cool off, product temperature is reduced to room temperature, and rolling is packaged into described semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe finished product then.
Claims (2)
1. semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe, it is characterized in that: be made up of the wall material, according to mass parts, described external wall material is made up of for 30 parts 60 parts of polyolefine hybrid resins, 10 parts of graphitized carbon blacks, 10 parts of auxiliary agents and fire retardant; Described polyolefine hybrid resin is the polyolefine hybrid resin that 1～30%EVA630,1～20%EVA421,20～50%EVA283 and four kinds of polyolefine material melt blendings of 10～30%EVA220 make by mass percentage; Described auxiliary agent is antioxidant 1-3 part, anti copper agent 0.5-1 part, and processing stabilizers 0.02-2 part, smoke suppressor 2-4 part, sensitization crosslinking coagent 1-2 part, surplus is a paraffin; Described fire retardant is a decabromodiphenyl oxide; Described antioxidant is four (β-(3, the 5-di-tert-butyl-hydroxy phenyl) propionic acid) pentaerythritol ester; Anti copper agent is a hydroxy-terminated polybutadienes vinyl cyanide fluid rubber; Processing stabilizers is rare-earth stabilizer REC-LS-D or REC-LS-F; Smoke suppressor is a zinc borate; The sensitization crosslinking coagent is a TriMethylolPropane(TMP).
2. semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe according to claim 1 is characterized in that: described polyolefine hybrid resin is the polyolefine hybrid resin that makes of 15%EVA630,20%EVA421,45%EVA283 and four kinds of polyolefine material melt blendings of 20%EVA220 by mass percentage; Described auxiliary agent is that antioxidant is 1 part, 1 part of anti copper agent, and 2 parts of processing stabilizers, 3 parts of smoke suppressors, 1 part of sensitization crosslinking coagent, surplus is a paraffin.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910185038XA CN101696296B (en) | 2009-10-28 | 2009-10-28 | Semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe and preparation method thereof |
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| CN200910185038XA CN101696296B (en) | 2009-10-28 | 2009-10-28 | Semiconductor low-voltage flume-retardant single-wall thermal shrinkage pipe and preparation method thereof |
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| CN101696296A CN101696296A (en) | 2010-04-21 |
| CN101696296B true CN101696296B (en) | 2011-09-14 |
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| CN106207935A (en) * | 2016-08-22 | 2016-12-07 | 长春市宇程机电有限公司 | The insulation protecting device of distribution transmission line and electric power means of defence |
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2009
- 2009-10-28 CN CN200910185038XA patent/CN101696296B/en not_active Expired - Fee Related
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| CN101696296A (en) | 2010-04-21 |
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Effective date of registration: 20201020 Address after: Wujiang District of Suzhou city in Jiangsu province 215200 Li Zhen Bei she Community Road No. 1288. Patentee after: Jiangsu Dasheng Thermal Shrinkage Protection Products Co.,Ltd. Address before: 215214 Wujiang City, Jiangsu province FenHu Beishe Community Road No. 1288. Patentee before: JIANGSU DASHENG PYROCONDENSATION MATERIAL Co.,Ltd. |
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