CN101689830A - Lc型vco - Google Patents
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- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
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- H—ELECTRICITY
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
- H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1293—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/0048—Circuit elements of oscillators including measures to switch the frequency band, e.g. by harmonic selection
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
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- H03B2200/005—Circuit elements of oscillators including measures to switch a capacitor
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- H—ELECTRICITY
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/025—Varying the frequency of the oscillations by electronic means the means being an electronic switch for switching in or out oscillator elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/10—Tuning of a resonator by means of digitally controlled capacitor bank
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Abstract
本文公开了具有多个操作频带的LC型VCO的实施例,这些操作频带具有相当类似的频率相对于控制信号的斜率。
Description
技术领域
概括地说,本发明涉及电压控制振荡器(VCO),具体地说,本发明涉及LC型VCO。
背景技术
电压控制振荡器(VCO)用于很多种应用,包括但不局限于:举例而言,锁相环(PLL)、延迟锁定环(DLL)和混频器电路。存在不同类型的VCO,包括环形振荡器和LC(电感器-电容器)型。LC VCO通常使用耦合到储能电路(tank circuit)的一个或多个放大器,其中,储能电路由一个或多个电感器和电容器形成。通常,一些电容器和/或电感器可控地变化(例如,基于所施加的控制电压),以便LC VCO输出频率可以响应于控制电压而进行变化。
图1示出传统的LC型VCO。它通常包括由P型晶体管P1、P2和电流源I1形成的差分放大器和由可选择使用的固定电容器(selectably engageablefixed capacitor)C1-C6、可变电容器(或变容二极管)VC1和电感器L1、L2形成的储能电路。固定电容器分成三个独立可用的组(engageable set):C1-C2、C3-C4和C5-6。可以选择这些电容器组的不同组合,结果形成8个不同的操作频带。可变电容器VC1耦合到控制电压Vctrl(例如,来自PLL中的电荷泵或环路滤波器),该控制电压Vctrl通过控制可变电容器VC1的电容来控制输出频率。VCO在节点Vout、V#out处生成差分输出信号,节点的频率基于所选择的电容器组和控制电压(Vctrl)电平。
遗憾的是,该电路的非理想方面在于,输出频率相对于控制电压的曲线的斜率(KVCO)对于每个频带而言是不同的。因此,需要改进的方案。
附图说明
以示例而非限制的方式在附图中示出本发明的实施例,其中,相同的附图标记指示相似的元件。
图1是传统LC型VCO的示意图。
图2是根据一些实施例的LC型VCO的示意图。
图3是根据一些实施例的可选择使用的可变电容器的示意图。
图4是根据一些实施例的具有LC VCO的计算机***的框图。
图5是根据一些其它实施例的LC型VCO的示意图。
具体实施方式
至少对于本申请而言,将VCO增益(KVCO)定义为针对给定控制信号(例如,控制电压)变化的振荡频率变化。这可以表示为:
对于LC型VCO(例如,以下讨论的、示出在图2或图5中的),KVCO可以根据储能谐振频率得出:
在上式中,C(Vctrl)=Cfixed+Cvar(Vctrl)是总的储能电容。(在这种LC型VCO中,固定电容器和可变电容器是并联的,结果使它们的净电容是加性的。然而,应该意识到,其它电感器-电容器配置也是可行的,且均处于本发明的范围内。)因此,总的储能电容是Vctrl的函数,因为可变电容依赖于Vctrl。KVCO可以表示为:
采用导数来获得KVCO的等式:
因为 所以可以重新排列KVCO等式,从而获得:
已经确定,为了获得具有宽带能力的LC型VCO,其中不同频带的KVCO恒定(或相当接近恒定),应该可以通过改变电感(其通常是不现实的)或通过改变可变电容斜率来补偿频率的变化。本文所公开的不同实施例包括:当在频带之间移动时改变变容二极管的斜率,例如,通过适当改变可变电容并结合固定电容中的变化来进行。通过调整可变电容器的大小(以及随之的组合储能变容二极管的斜率)来适应频率的变化(即,总储能电容的变化),可以使KVCO在不同的频带上适度一致。
图2示出根据一些实施例的具有可变补偿电容的LC型VCO。所描述的VCO类似于图1的VCO电路,除了每个固定的电容器组额外地具有可选择地与相关联的固定电容器组一起使用的相关联的可变电容器。所描述的VCO具有总是处于使用中的可变电容器VC1以及三个额外的可变电容器VC2-VC4,它们中的每一个均与不同的固定电容器组相关联。特别地,VCO具有由固定电容器C1、C2和可变电容器VC2形成的第一电容器组;它具有由固定电容器C3、C4和可变电容器VC3形成的第二电容器组;它还具有由固定电容器C5、C6和可变电容器VC4形成的第三电容器组。
根据一些实施例,第一组的总固定电容是第二组的总固定电容的2倍,而第二组的总固定电容是第三组的总固定电容的2倍。换句话说,第一组是最大的组,而第三组是最小的组,同时各个组相对于彼此是二进制加权的。利用这种配置,根据选择控制输入A0、A1和A2的值,八个独立的相等间隔的频带是可用的。例如,在一些实施例中,C5和C6均是0.2pF,使得第三组固定电容是0.1pF。C3和C4均是0.4pF,使得第二组电容是0.2pF;而C1和C2是0.8pF,使得第一组电容为0.4pF。电感器L1、L2均是0.5nH,而可变电容器均处于电容器范围内,结果形成八个不同频带的接近恒定的KVCO。根据等式3(见上),选择可变电容器,以便1/[C(Vctrl)3/2]与dC(Vctrl)/dVctrl的乘积在不同频带上基本上保持恒定。应该注意到,dC(Vctrl)/dVctrl项仅仅是所使用的可变电容器的函数,因为固定电容器所采用的常数的导数为零。然而,第一项1/[C(Vctrl)3/2]是所采用的固定电容器和可变电容器两者的函数。)
应该意识到,根据本文的教导,可以实现不同的电容器和/或电感器配置来获得相当恒定的KVCO以及所期望的设计参数。在所描述的实施例中,每个可选电容器组包括彼此串联的两个固定电容器,不同的可选电容器组彼此并联,并且可选电容器组与电感器并联。然而,技术人员应该意识到,存在多个其它方式来实现LC型VCO并保持相当恒定的KVCO,如本文所教导。尽管因为并联的电容器是加性的,所以将使得对1/[C(Vctrl)3/2]与dC(Vctrl)/dVctrl的乘积的维护实现起来更简单,但是在每一组中仍然可以使用一个或多个固定和/或可变电容器,并且各个组相对于彼此可以按照不同的组合进行设置,而不是简单地并联。沿着这些线,可以独立地控制固定电容器和可变电容器,即,不是所有的均由选择线Ai来控制。此外,可以按照任何适当的方式来分配它们的值。例如,固定电容器可以是二进制加权的,而可变电容器可以是热电编码的(thermo-coded)。反之也是可以的,或者二者均可以是相同加权的,例如,二进制的或热电编码的。
图3示出根据一些实施例的用于实现可选电容器组的电路。它包括如图所示耦合在一起的可变电容器VCB、VCC、开关晶体管N1、N2、N3和固定电容器CB和CC。如图所示,可变电容器VCB和VCC由漏极和源极耦合到一起的PMOS晶体管形成。它们以背靠背的配置耦合到一起,从而使得它们可以由频率控制电压Vctrl来偏置,该频率控制电压Vctrl实质上从输出线(rail)Vout、V#out解耦合。利用这种可变电容器的实施方式,当Vctrl增加时,可变电容也增加,从而降低了输出频率。
可选电容器组耦合在端子B和C之间,端子B和C与来自于图2的VCO的输出线Vout和V#out相对应。选择控制输入Ai耦合到开关晶体管N1、N2、N3的栅极,并且频率控制电压节点Vctrl耦合到用于形成可变电容器VCB和VCC的P型MOS晶体管的漏极/源极。应该注意到,在该实现中,有两个N型开关N1和N2将MOS实现的可变电容器与控制电压(Vctrl)以及输出线隔绝。这可能是所期望的,因为通常本质上是DC的控制电压节点可以用作AC接地端。在其它实施例中,例如,具有其它类型的可变电容器的实现,这可能是或者也可能不是所期望的。此外,虽然示出了MOS晶体管可变电容器,但是也可以根据设计目的而使用任何适当的可变电容器方案(例如,PN结等))。
(术语“PMOS晶体管”是指P型金属氧化物半导体场效应晶体管。同样地,“NMOS晶体管”是指N型金属氧化物半导体场效应晶体管。应该意识到,无论何时使用术语“晶体管”、“MOS晶体管”、“NMOS晶体管”或“PMOS晶体管”,除非特别地指出或由其用途的本质指示,否则它们均是以示例的方式来使用的。它们包括MOS器件的不同种类,MOS器件包括,举例而言,具有不同VT和氧化物厚度的器件。此外,除非具体指MOS或其它,否则术语晶体管可以包括其它适当的晶体管类型,例如,结型场效应晶体管、双极性结型晶体管和各种类型的三维晶体管,以及目前公知的或尚未研发出来的。)
参见图4,示出计算机***的一个实例。所描述的***总体地包括:耦合到电源404的处理器402、无线接口408和存储器406。它耦合到电源404,以在操作时从电源404接收电能。无线接口408耦合到天线410,以通过无线接口芯片408将处理器通信地链接到无线网络(未示出)。处理器402包括具有如本文所公开的一个或多个LC型VCO 403的通信接口403,以将处理器402通信地链接到存储器406。
应该注意到,所描述的计算机***可以以不同的形式来实现。也就是说,它可以以单芯片模块、电路板或具有多个电路板的底板(chassis)的形式来实现。类似地,它能构成一个或多个完整的计算机,或者可替换地,它能构成计算***内的一个有用的部件。
本发明不局限于所描述的实施例,而是可以在所附权利要求书的精神和范围内通过修改和替换来实现。例如,图5示出根据本发明实施例的LC型VCO的另一实施例。它总体上包括:由可变电容器VC1-VCM形成并由控制线AV1-AVM来控制的可变电容器组,以及,由固定电容器C1-CN形成并由控制线AF1-AFN单独地控制的固定电容器组。于是,示出了可以彼此关联地或者独立地、以任何适当方式受到控制的固定电容器和可变电容器。该实施例也采用了耦合在所示的输出线之间的交叉耦合的NMOS晶体管N1、2以及单个电感器L1。
此外,应该意识到,本发明适用于与所有类型的半导体集成电路(“IC”)芯片一起使用。这些IC芯片的示例包括但不限于:处理器、控制器、芯片组部件、可编程逻辑阵列(PLA)、存储器芯片、网络芯片等。
此外,应该意识到,已经给出了示例性的大小/模型/值/范围,但是本发明并不局限于这些。随着制造技术(例如,光刻(photolithograph))随时间的成熟,可以预期能制造出更小尺寸的设备。此外,为了简化图示和讨论,并且避免使本发明难理解,在附图中可能示出或者没有示出公知的前往IC芯片和其它部件的电源/接地连接。进一步地,可以以框图的形式示出各种设置,这是为了避免使本发明难理解并鉴于以下事实:实现这种框图设置的详情高度地依赖于实现本发明的平台,即,这种详情应处于本领域技术人员的能力范围内。在为了描述本发明的示例性实施例而提出具体细节(例如,电路)的情况下,本领域技术人员会清楚可以没有这些具体细节或利用这些具体细节的变体来实施本发明。因此,本说明书应该视为示例性的,而不是限制性的。
Claims (21)
1、一种芯片,包括:
LC型VCO,其具有频率增益基本上相等的两个或多个操作频带。
2、如权利要求1所述的芯片,其中,所述VCO包括:一个或多个可选电容器组,每个电容器组均具有至少一个固定电容器和由频率控制电压控制的至少一个可变电容器。
3、如权利要求2所述的芯片,其中,所述一个或多个可选电容器组包括:彼此可控地并联耦合的多个可选电容器组。
4、如权利要求3所述的芯片,其中,所述多个可选电容器组可控地耦合到一个或多个电感器,以形成谐振储能电路。
5、如权利要求2所述的芯片,其中,所述至少一个可变电容器包括配置成电容器的MOS晶体管。
6、如权利要求5所述的芯片,其中,所述至少一个可变电容器包括第一和第二MOS电容器,所述第一和第二MOS电容器用作电容器并在公共频率控制电压节点处以背靠背方式耦合在一起。
7、如权利要求2所述的芯片,其中,所述VCO包括:与所述一个或多个可选电容器组并联耦合且由所述频率控制电压来控制的一个或多个可变电容器。
8、如权利要求7所述的芯片,其中,1/[C(Vctrl)3/2]与dC(Vctrl)/dVctrl的乘积在所述两个或多个操作频带上基本上保持恒定,其中,Vctrl是所述频率控制电压,而C(Vctrl)是作为所述频率控制电压的函数的所采用的总电容。
9、一种集成电路,包括:
放大器,用于基于谐振储能电路产生频率信号,所述谐振储能电路包括多个可选的固定电容器和可变电容器,以提供两个或多个操作带,每个操作带均具有适度相等的频率相对于控制电压的斜率。
10、如权利要求9所述的集成电路,其中,所述放大器是具有互补输出节点以提供频率信号的差分放大器。
11、如权利要求10所述的集成电路,其中,所述多个固定电容器和可变电容器构成可选电容器组,所述可选电容器组可选地彼此并联耦合且耦合到所述互补输出节点。
12、如权利要求11所述的集成电路,其中,所述储能电路包括耦合在所述互补输出节点与电源参考点之间的第一和第二电感器。
13、如权利要求12所述的集成电路,其中,所述可变电容器由构成电容器的MOS晶体管形成。
14、如权利要求13所述的集成电路,包括:固定耦合在所述互补输出节点之间的可变电容器。
15、一种计算机***,包括:
处理器,具有一个或多个LC型VCO,以实现至少一个通信接口,所述一个或多个LC型VCO包括:频率增益基本上相等的两个或多个操作频带;
网络接口设备,通过至少一个通信接口耦合到所述处理器;和
天线,耦合到所述网络接口设备,以将所述处理器通信地链接到无线网络。
16、如权利要求15所述的计算机***,其中,所述VCO包括一个或多个可选电容器组,每个电容器组均具有至少一个固定电容器和由频率控制电压控制的至少一个可变电容器。
17、如权利要求16所述的计算机***,其中,所述一个或多个可选电容器组包括彼此可控地并联耦合的多个可选电容器组。
18、如权利要求17所述的计算机***,其中,所述多个可选电容器组可控地耦合到一个或多个电感器,以形成谐振储能电路。
19、如权利要求16所述的计算机***,其中,所述至少一个可变电容器包括配置成电容器的MOS晶体管。
20、如权利要求19所述的计算机***,其中,所述至少一个可变电容器包括第一和第二MOS电容器,所述第一和第二MOS电容器在公共频率控制电压节点处以背靠背方式耦合在一起。
21、如权利要求16所述的芯片,其中,所述VCO包括:与所述一个或多个可选电容器组并联耦合并由所述频率控制电压来控制的一个或多个可变电容器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/746,403 US20080278249A1 (en) | 2007-05-09 | 2007-05-09 | Lc-type vco |
US11/746,403 | 2007-05-09 | ||
PCT/US2008/061217 WO2008140909A1 (en) | 2007-05-09 | 2008-04-23 | Lc-type vco |
Publications (1)
Publication Number | Publication Date |
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CN101689830A true CN101689830A (zh) | 2010-03-31 |
Family
ID=39968980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880023769A Pending CN101689830A (zh) | 2007-05-09 | 2008-04-23 | Lc型vco |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080278249A1 (zh) |
CN (1) | CN101689830A (zh) |
DE (1) | DE112008001209T5 (zh) |
WO (1) | WO2008140909A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102938644A (zh) * | 2011-08-15 | 2013-02-20 | 联发科技(新加坡)私人有限公司 | 数字控制振荡器 |
CN108028658A (zh) * | 2015-09-25 | 2018-05-11 | 高通股份有限公司 | 用于模拟锁相环(pll)的无干扰带宽切换方案 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US8674771B2 (en) * | 2008-01-29 | 2014-03-18 | Broadcom Corporation | Fixed bandwidth LO-GEN |
US8432229B2 (en) | 2011-04-14 | 2013-04-30 | Lsi Corporation | PVT consistent PLL incorporating multiple LCVCOs |
TWI482426B (zh) * | 2012-03-13 | 2015-04-21 | Ind Tech Res Inst | 電壓控制振盪器模組以及振盪訊號產生方法 |
US9197188B2 (en) | 2012-09-13 | 2015-11-24 | The Regents Of The University Of Michigan | Wide range continuously tunable capacitor bank |
US9912320B2 (en) * | 2016-06-13 | 2018-03-06 | The Hong Kong University Of Science And Technology | Exponentially scaling switched capacitor |
US10574186B1 (en) * | 2018-12-08 | 2020-02-25 | Shenzhen Goodix Technologyco., Ltd. | Voltage controlled oscillator pulling reduction |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US7221921B2 (en) * | 1998-05-29 | 2007-05-22 | Silicon Laboratories | Partitioning of radio-frequency apparatus |
US6833769B2 (en) * | 2003-03-21 | 2004-12-21 | Nokia Corporation | Voltage controlled capacitive elements having a biasing network |
JP2004147310A (ja) * | 2002-10-03 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 電圧制御発振器、無線通信機器、電圧制御発振方法 |
KR100498484B1 (ko) * | 2003-01-30 | 2005-07-01 | 삼성전자주식회사 | 넓은 주파수 대역에서 일정한 이득을 가지는 전압 제어발진기 및 그 방법 |
JP4390105B2 (ja) * | 2004-05-19 | 2009-12-24 | ソニー・エリクソン・モバイルコミュニケーションズ株式会社 | 可変容量機能のオンオフスイッチ付き可変容量回路、及びこの可変容量回路を用いた電圧制御発振器 |
JP2006229266A (ja) * | 2005-02-15 | 2006-08-31 | Renesas Technology Corp | 電圧制御発振器およびrf−ic |
KR100727319B1 (ko) * | 2005-05-04 | 2007-06-12 | 삼성전자주식회사 | 미세 조정 장치와 디지털 조정 장치 및 이를 구비하는 전압제어 발진기 |
JP5027472B2 (ja) * | 2005-11-09 | 2012-09-19 | ルネサスエレクトロニクス株式会社 | 発振器およびそれを用いた情報機器 |
-
2007
- 2007-05-09 US US11/746,403 patent/US20080278249A1/en not_active Abandoned
-
2008
- 2008-04-23 DE DE112008001209T patent/DE112008001209T5/de not_active Withdrawn
- 2008-04-23 WO PCT/US2008/061217 patent/WO2008140909A1/en active Application Filing
- 2008-04-23 CN CN200880023769A patent/CN101689830A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102938644A (zh) * | 2011-08-15 | 2013-02-20 | 联发科技(新加坡)私人有限公司 | 数字控制振荡器 |
CN102938644B (zh) * | 2011-08-15 | 2015-10-07 | 联发科技(新加坡)私人有限公司 | 数字控制振荡器 |
CN108028658A (zh) * | 2015-09-25 | 2018-05-11 | 高通股份有限公司 | 用于模拟锁相环(pll)的无干扰带宽切换方案 |
Also Published As
Publication number | Publication date |
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WO2008140909A1 (en) | 2008-11-20 |
US20080278249A1 (en) | 2008-11-13 |
DE112008001209T5 (de) | 2010-02-25 |
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