CN101681906A - 功率模块 - Google Patents

功率模块 Download PDF

Info

Publication number
CN101681906A
CN101681906A CN200880019449A CN200880019449A CN101681906A CN 101681906 A CN101681906 A CN 101681906A CN 200880019449 A CN200880019449 A CN 200880019449A CN 200880019449 A CN200880019449 A CN 200880019449A CN 101681906 A CN101681906 A CN 101681906A
Authority
CN
China
Prior art keywords
bar
welding
bus
bus bar
utmost point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200880019449A
Other languages
English (en)
Other versions
CN101681906B (zh
Inventor
今井诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of CN101681906A publication Critical patent/CN101681906A/zh
Application granted granted Critical
Publication of CN101681906B publication Critical patent/CN101681906B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48105—Connecting bonding areas at different heights
    • H01L2224/48108—Connecting bonding areas at different heights the connector not being orthogonal to a side surface of the semiconductor or solid-state body, e.g. fanned-out connectors, radial layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/48155—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48157—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

本发明提供一种能够在避免由于焊接热引起的树脂壳的焊接损伤的同时焊接缓冲电容的功率模块。在将缓冲电容(12)的引线(12A、12B)分别焊接在P极汇流排(2)和N极汇流排3的特定部位的上面时，在P极汇流排(2)和N极汇流排(3)的特定部位所产生的焊接热，分别从使P极汇流排(2)和N极汇流排(3)的特定部位的下面露出的开口(13、14)释放。因此，能够在避免由于焊接热引起的树脂壳(7)的焊接损伤的同时将缓冲电容(12)通过后附着的方式进行焊接。另外，在此焊接之时，将另外的冷却头(15)***开口(13、14)来分别对P极汇流排(2)和N极汇流排(3)的特定部位的下面进行强制冷却，由此，能够更加可靠地避免树脂壳(7)的焊接损伤。

Description

功率模块
技术领域
本发明涉及具有用于将开关元件与电源连接的汇流排***树脂壳的构造的功率模块。
背景技术
一般地，具有IGBT(Insulated Gate Bipolar Transister，绝缘栅双极型功率管)等大功率的开关元件的功率模块，为了确保其绝缘性，通常具有用于将开关元件与电源连接的汇流排***树脂壳的构造。
在此种功率模块中，连接了用于抑制开关元件的浪涌电压的缓冲电容(平滑电容)(例如参照日本特开2006-086438号公报)。在此，在日本特开2006-086438号公报中公开了将缓冲电容(平滑电容)在功率模块的外部连接的构造。
然而，在专利文献1中记载的以往技术中，由于在功率模块的外部连接缓冲电容，因此，缓冲电容和功率模块内的开关元件之间的距离变大。其结果，有可能不能充分发挥用于抑制开关元件的浪涌电压的缓冲电容的功能。
进而，如果将缓冲电容与功率模块内的汇流排连接，则可以消除这种可能性，但是，功率模块内的汇流排通常被***树脂壳，所以，若通过焊接将缓冲电容与此汇流排连接，则存在其附近的树脂壳由于焊接热而熔化产生损伤的问题。
发明内容
因此，本发明的目的在于，提供一种可以在避免由于焊接热引起的树脂壳的焊接损伤的同时焊接缓冲电容的功率模块。
本发明所涉及的功率模块，用于将开关元件与电源连接的汇流排***树脂壳，用于抑制开关元件的浪涌电压的缓冲电容的引线焊接在汇流排的特定部位的上面，至少在树脂壳中设置有用于使汇流排的特定部位的下面露出的开口。
在本发明所涉及的功率模块中，在将缓冲电容的引线焊接在汇流排的特定部位的上面时，汇流排的特定部位所产生的焊接热从使汇流排的特定部位的下面露出的开口释放。而且，在该焊接之时，能够将另外的冷却部件***开口来对汇流排的特定部位的下面进行强制冷却。
附图说明
图1是示意性地表示本发明的一实施方式所涉及的功率模块的构造的纵剖面图。
图2是表示用于对图1所示的P极汇流排和N极汇流排进行强制冷却的冷却头***P极汇流排侧的一方的开口的状态的与图1对应的纵剖面图。
图3是表示图2所示的冷却头的变形例的与图2对应的纵剖面图。
具体实施方式
以下，参照附图对本发明所涉及的功率模块的最佳实施方式进行说明。在此，在所参照的图中，图1是示意地表示一实施方式所涉及的功率模块的构造的纵剖面图。
如图1所示，一实施方式所涉及的功率模块，具有：构成桥电路的多个开关元件1；用于将各开关元件1与电源连接的P极汇流排2和N极汇流排3；用于从各开关元件1获取输出的输出用汇流排4和输出用汇流排5。
各开关元件1由大功率的IGBT(绝缘栅双极型功率管)构成，在集电极C上层叠发射极E。此外，在图示中省略了栅极。而且，这种各开关元件1设置于由厚板构成的散热板6上的左右方向两端部附近。
除了各开关元件1的设置部位以外，在散热板6上覆盖成型(OverMold)有树脂壳7，P极汇流排2、N极汇流排3、输出用汇流排4和输出用汇流排5分别***此树脂壳7而一体化。
P极汇流排2和N极汇流排3，例如由厚的铜板材料构成，左右对称地配置在树脂壳7的左右方向中央部附近。另一方面，输出用汇流排4和输出用汇流排5例如由棱柱状的铜棒材料构成，设置在树脂壳7的左右方向两端部附近。
配置在散热板6的左端部附近的开关元件1的集电极C通过焊线8与P极汇流排2电连接，其发射极E通过焊线9与输出用汇流排4电连接。
另一方面，配置在散热板6的右端部附近的开关元件1的发射极E通过焊线10与N极汇流排3电连接，其集电极C通过焊线11与输出用汇流排5电连接。
在此，为了抑制加在各开关元件1上的浪涌电压，具有耐热性的陶瓷电容构成的缓冲电容12连接在P极汇流排2和N极汇流排3之间。即，通过后附着的方式将缓冲电容12的一方的引线12A焊接在P极汇流排2的特定部位的上面。同样地，通过后附着的方式将缓冲电容12的另一方的引线12B焊接在N极汇流排3的特定部位的上面。
作为用于此的构造，跨散热板6和树脂壳7形成了使P极汇流排2的特定部位的下面露出而使其能够散热的一方的开口13。同样地，跨散热板6和树脂壳7形成了使N极汇流排3的特定部位的下面露出而使其能够散热的另一方的开口14。
在此，一方的开口13和另一方的开口14分别以截面形状为圆形的方式形成，但是，该截面形状不限于圆形，也可以是椭圆形或四边形。
在具有以上这样的构造的一实施方式的功率模块中，例如，通过电子束焊接将缓冲电容12的一方的引线12A焊接在P极汇流排2的特定部位的上面，将另一方的引线12B焊接在N极汇流排3的特定部位的上面。
此时，在P极汇流排2的特定部位产生的焊接热从使P极汇流排2的特定部位的下面露出的一方的开口13散出，因此不会由于焊接热使P极汇流排2附近的树脂壳7熔化而损伤。同样地，在N极汇流排3的特定部位产生的焊接热从使N极汇流排3的特定部位的下面露出的另一方的开口14散出，因此，不会由于焊接热使N极汇流排3附近的树脂壳7熔化而损伤。
从而，根据一实施方式的功率模块，能够在避免由于焊接热引起的树脂壳7的焊接损伤的同时通过后附着的方式焊接缓冲电容12。
在此，当将缓冲电容12的一方的引线12A焊接在P极汇流排2的特定部位的上面之时，将图2所示那样的冷却头(冷却部材)15***一方的开口13来对P极汇流排2的特定部位的下面进行强制冷却，从而能够更可靠地避免P极汇流排2附近的树脂壳7的焊接损伤。
同样地，在将缓冲电容12的另一方的引线12B焊接在N极汇流排3的特定部位的上面之时，若将冷却头15***另一方的开口14来对N极汇流排3的特定部位的下面进行强制冷却，能够更可靠地避免N极汇流排3附近的树脂壳7的焊接损伤。
在此，图2所示的冷却头15，呈现细径的棒状的外观，在其内部形成从未图示的冷却装置压送的冷却水的循环通路15A，其上端面形成平坦面。
此外，可以将图2所示的冷却头15变更成图3所示那样的冷却头(冷却部件)16。此冷却头16，与图2所示的冷却头15同样地呈现棒状的外观，在其内部形成从未图示的冷却装置压送的冷却水的循环通路16A，但是，其外径例如，形成比一方的开口13的直径稍小的程度的粗径。而且，在此冷却头16的平坦的上端面，形成有圆形的凹部16B，在其周围形成环状的冷却突部16C。
在此，例如***P极汇流排2侧的一方的开口13的冷却头16的圆形的凹部16B与焊接了缓冲电容12的一方的引线12A的P极汇流排2的特定部位的下面相面对，其周围的冷却突部16C对P极汇流排2的特定部位的周围的下面进行强制冷却。
从而，如果使用此冷却头16，则能够可靠地将缓冲电容12的一方的引线12A和另一方的引线12B分别焊接在P极汇流排2和N极汇流排3的特定部位的上面，而且，能够更进一步可靠地避免P极汇流排2附近和N极汇流排3附近的树脂壳7的焊接损伤。
工业上可利用性
根据本发明，在将缓冲电容的引线焊接在汇流排的特定部位的上面之时，在汇流排的特定部位产生的焊接热从使汇流排的特定部位的下面露出的开口散出，从而能够在避免由于焊接热引起的树脂壳的焊接损伤的同时通过后附着的方式焊接缓冲电容。而且，在此焊接之时，将另外的冷却部件***开口来对汇流排的特定部位的下面进行强制冷却从而能够更可靠地避免树脂壳的焊接损伤。

Claims (1)

1.一种功率模块，其特征在于，用于将开关元件与电源连接的汇流排***树脂壳中，用于抑制开关元件的浪涌电压的缓冲电容的引线焊接在上述汇流排的特定部位的上面，
至少在上述树脂壳上，设置有用于使上述汇流排的特定部位的下面露出的开口。
CN2008800194495A 2007-06-15 2008-06-12 功率模块 Expired - Fee Related CN101681906B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007159243A JP4661830B2 (ja) 2007-06-15 2007-06-15 パワーモジュール
JP159243/2007 2007-06-15
PCT/JP2008/061181 WO2008153206A1 (ja) 2007-06-15 2008-06-12 パワーモジュール

Publications (2)

Publication Number Publication Date
CN101681906A true CN101681906A (zh) 2010-03-24
CN101681906B CN101681906B (zh) 2011-03-30

Family

ID=40129802

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800194495A Expired - Fee Related CN101681906B (zh) 2007-06-15 2008-06-12 功率模块

Country Status (5)

Country Link
US (1) US8254133B2 (zh)
EP (1) EP2169718B1 (zh)
JP (1) JP4661830B2 (zh)
CN (1) CN101681906B (zh)
WO (1) WO2008153206A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107552909A (zh) * 2017-09-30 2018-01-09 无锡奥特维科技股份有限公司 汇流条焊接方法
CN111566884A (zh) * 2017-12-28 2020-08-21 株式会社自动网络技术研究所 电连接装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8897023B2 (en) * 2009-05-15 2014-11-25 Hamilton Sundstrand Corporation Motor controller assembly with capacitor thermal isolation
US8547684B2 (en) * 2009-12-17 2013-10-01 Schneider Electric USA, Inc. Panelboard having a parallel feeder bars distribution
JP5824672B2 (ja) * 2011-02-24 2015-11-25 パナソニックＩｐマネジメント株式会社 パワーモジュール
KR101204564B1 (ko) * 2011-09-30 2012-11-23 삼성전기주식회사 전력 모듈 패키지 및 그 제조 방법
JP7001960B2 (ja) * 2018-03-23 2022-01-20 株式会社オートネットワーク技術研究所 回路構成体

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997001263A1 (fr) * 1995-06-20 1997-01-09 Matsushita Electric Industrial Co., Ltd. Dispositif de maintien de piece, substrat dote de ce dispositif et son procede de fabrication
US5943216A (en) * 1997-06-03 1999-08-24 Photo Opto Electronic Technologies Apparatus for providing a two-sided, cavity, inverted-mounted component circuit board
CN2328048Y (zh) * 1997-10-30 1999-07-07 周立杰 音响计算机专用延时插座
JP2000058372A (ja) * 1998-08-04 2000-02-25 Toshiba Corp セラミックコンデンサ実装構造
JP3484122B2 (ja) * 2000-01-13 2004-01-06 三菱電機株式会社 電力変換装置
JP4044265B2 (ja) * 2000-05-16 2008-02-06 三菱電機株式会社 パワーモジュール
JP3698033B2 (ja) 2000-08-22 2005-09-21 住友電装株式会社 ジャンクションボックス
JP2002134875A (ja) * 2000-10-26 2002-05-10 Murata Mfg Co Ltd モジュール部品、モジュール部品の実装構造、および電子装置
JP2004096974A (ja) * 2002-09-04 2004-03-25 Yaskawa Electric Corp スナバモジュールおよび電力変換装置
JP2004221256A (ja) * 2003-01-14 2004-08-05 Auto Network Gijutsu Kenkyusho:Kk 回路構成体及びその製造方法
JP2005094882A (ja) * 2003-09-16 2005-04-07 Toyota Motor Corp パワーモジュール
JP4424042B2 (ja) * 2004-04-06 2010-03-03 住友電装株式会社 車載用リレーおよび電気接続箱
JP4590961B2 (ja) * 2004-07-20 2010-12-01 株式会社デンソー 電子装置
JP4430497B2 (ja) 2004-09-17 2010-03-10 ニチコン株式会社 半導体モジュール
JP4680816B2 (ja) 2006-03-31 2011-05-11 三菱電機株式会社 半導体装置
JP4635963B2 (ja) * 2006-06-02 2011-02-23 株式会社デンソー 電気回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107552909A (zh) * 2017-09-30 2018-01-09 无锡奥特维科技股份有限公司 汇流条焊接方法
CN111566884A (zh) * 2017-12-28 2020-08-21 株式会社自动网络技术研究所 电连接装置

Also Published As

Publication number Publication date
JP4661830B2 (ja) 2011-03-30
US8254133B2 (en) 2012-08-28
JP2008311522A (ja) 2008-12-25
EP2169718A1 (en) 2010-03-31
WO2008153206A1 (ja) 2008-12-18
US20100172117A1 (en) 2010-07-08
CN101681906B (zh) 2011-03-30
EP2169718A4 (en) 2011-01-05
EP2169718B1 (en) 2016-07-20

Similar Documents

Publication Publication Date Title
CN101681906B (zh) 功率模块
JP6295901B2 (ja) 蓄電装置
JPWO2016031295A1 (ja) ３レベル電力変換装置
CN105359269A (zh) 半导体装置
JP6749497B2 (ja) プレスパックパワー半導体モジュール用ばね電極
JP2006245182A (ja) 半導体装置及びその製造方法
JP6001472B2 (ja) 半導体装置の製造方法
CN108448268B (zh) 一种绝缘线的固定结构及其组装方法
JP5407674B2 (ja) 半導体装置
CN206878589U (zh) 接线装置及定子
JP4339660B2 (ja) 半導体装置
CN203277372U (zh) 一种igbt模块封装件
JP6599736B2 (ja) 半導体モジュール
CN204167287U (zh) 一种高可靠微晶玻璃ic封装外壳
CN206877959U (zh) 一种保险丝装置
CN203774187U (zh) 一种内引线接地部位设有一定角度的固体继电器外壳
JP5991206B2 (ja) 半導体モジュールおよびインバータモジュール
CN109801899A (zh) 一种功率半导体模块
CN209461455U (zh) 串联式二极管封装结构
CN216116417U (zh) 一种ntc温度采集单元
CN209027541U (zh) 一种采用直插式装配的霍尔传感器
CN215145630U (zh) 一种异型Hot-Bar焊头
CN207925915U (zh) 一种电力柜用除湿装置
CN111489870B (zh) 一种大功率高阻异型水泥电阻器
JP2020025058A (ja) 半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110330

Termination date: 20210612