CN101681816B - Twin target sputter system for thin film passivation and method of forming film using the same - Google Patents
Twin target sputter system for thin film passivation and method of forming film using the same Download PDFInfo
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- CN101681816B CN101681816B CN2008800176586A CN200880017658A CN101681816B CN 101681816 B CN101681816 B CN 101681816B CN 2008800176586 A CN2008800176586 A CN 2008800176586A CN 200880017658 A CN200880017658 A CN 200880017658A CN 101681816 B CN101681816 B CN 101681816B
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- 239000010409 thin film Substances 0.000 title claims abstract description 84
- 239000010408 film Substances 0.000 title claims abstract description 76
- 238000002161 passivation Methods 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 239000000463 material Substances 0.000 claims description 15
- 239000007921 spray Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910004158 TaO Inorganic materials 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 238000005538 encapsulation Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 description 33
- 239000007789 gas Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 230000004907 flux Effects 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000013074 reference sample Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- MFHHXXRRFHXQJZ-UHFFFAOYSA-N NONON Chemical group NONON MFHHXXRRFHXQJZ-UHFFFAOYSA-N 0.000 description 1
- 241000532412 Vitex Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000009347 chasteberry Nutrition 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004643 material aging Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Provided are a twin target sputter system for thin film passivation, which generates high density plasma between the same-shaped targets opposite to each other to thereby form a film at a high speed, and a method of forming the film using the same. The twin target sputter system for thin film passivation includes: a vacuum chamber; a substrate supporter which supports a substrate in the vacuum chamber; a pair of sputter guns each of which faces the substrate, and comprises a yoke plate opened to one side or opposite sides and a plurality of magnets disposed on the yoke plate at regular intervals; targets which are mounted on the pair of yoke plates, respectively; a gun supporter which supports the pair of sputter guns; and a power supply which supplies electric current to the targets, wherein the plurality of magnets each comprises upper and lower parts, the upper and lower parts are formed as a single body and different in magnetic polarity from each other, and the plurality of magnets are aligned in a line, and wherein the gun supporter or the substrate supporter is movable in the chamber. Using the twin target sputter system for thin film passivation and the method of forming a film using the same, an organic light emitting diode (OLED) and an organic thin film transistor (OTFT) can be fabricated by a simple thin film process without an encapsulation process using the existing metal can or glass substrate, thereby simplifying the process and lowering initial investment costs for fabricating the OLED.
Description
Technical field
The present invention relates to a kind of twin target sputter system and a kind of film forming method of this system of utilizing that is used for thin film passivation, wherein, toward each other and have between the identical shaped target high-density plasma of generation to form film at high speed.
Background technology
Usually, the sputter that also is considered to physical vapor deposition (PVD) is widely used as the method for depositing metal layers when making integrated circuit or similar material layer.This superficial layer that sputters at deposition target material on the test piece, and schematically illustrate as Fig. 1, can see that the magnetron 10 that is placed on sputtering target 12 back can be used for improving sputtering rate.Magnetron 10 applies magnetic field 14 on the surface of target 12 so that trapped electrons and increase plasma density.Typically, magnetron 10 comprises having perpendicular to two magnets 16 of the non-parallel magnetic pole on target 12 surfaces and 18 and supporting and magnetically be connected the yoke 20 of two magnets 16 and 18.
Simultaneously, No. 6156172 patent of the U.S. discloses the example of facing targets sputtering machine (facingtarget sputter), and it comprises box-like facing targets sputtering assembly, as shown in Figure 2.
Referring to Fig. 2, in the structure of box-like facing targets sputtering assembly 70, target unit 100a and 100b are installed on the two opposite side surfaces 71a and 71b among four side 71a to 71d of adjacent openings side 71f, this open side is as the opening of rectangular frame 71 (described four side 71a to 71d are included among five side 71a to 71e except that the open side 71f of rectangular frame 71), and three side 71c to 71e use closure plate 72c to 72e closure respectively.Target unit 100a comprises that target 110a and utilization are installed in the magnetic field generator of target 110a permanent magnet on every side, and target unit 110b comprises that target 110b and utilization are installed in the magnetic field generator of target 110b permanent magnet on every side.In box-like subtend target type sputter assembly 70, open side 71f is towards vacuum chamber and be attached thereto, and to be formedly has the substrate of film to be placed in the vacuum chamber simultaneously towards open side 71f.
In addition, the example that utilizes the facing targets sputtering machine to make the method for Organic Light Emitting Diode (OLED) has disclosed in 2006-0064702 (on June 13rd, 2006) number Korean Patent public publication.
As shown in Figure 3, the facing targets sputtering machine that discloses in the 2006-0064702 Korean Patent public publication comprises chamber 100, will supply to the reacting gas feedway 130 in the chamber 100, the specular target 200 and 210 that is used for the pump 120 that reduces the pressure of chamber 100 and be used to form vacuum and is installed in chamber 100 and faces with each other such as the reacting gas of argon or oxygen, and wherein negative (-) electrical power (negative electric power) supplies to target 200 and 210 independently or concurrently.
Referring to Fig. 3, the magnetic field of equidirectional is formed uniformly between target 200 and 210.In addition, wherein positive voltage is constant but zone weak strength is formed on the middle part between target 200 and 210.And plate magnet 220 and 230 places target 200 and 210 rears respectively, and with opposed polarity toward each other, so that between target 220 and 230, form uniform magnetic field.By arranging a plurality of sheet magnets (pellet magnet) 220 and 230, using bar-shaped magnet 220 and 230, perhaps use the electromagnet 220 and 230 that to regulate magnetic field to construct magnet 220 and 230 herein.
Movably under the situation, sputtering source moves, thereby forms electrode film by scanning on the whole surface of large-scale substrate 110 at the sputtering source that comprises two targets 200 and 210, and the whole surface of this large-scale substrate is formed with the organic film that comprises luminescent layer.In addition, if shielding 240 is installed around target 200 and 210, the material that then prevents target 200 and 210 is except dispersing on other direction the direction of substrate 110, that is, stack material is only dispersed in one direction, so has formed the characteristic of sputter gun.
Make Organic Light Emitting Diode (OLED) or OTFT (OTFT), encapsulation process is necessary with protection diode or transistor, thereby prevents that oxygen or moisture in the atmosphere from infiltrating organic film.
Usually, be used for organic film and airborne moisture or the oxygen effect of OLED or OTFT, thereby make its material aging.This aging in order to prevent, use metal can or thin substrate of glass to carry out encapsulation process.
Yet, using metal can or thin substrate of glass to carry out under the situation of encapsulation process, the process of manufacturing diode not only becomes complicated but also needs for a long time.In addition, problem is also not develop packaging technology or the packaging system that can make large-scale OLED or OTFT.In order to address this problem, as shown in Figure 4, substituted metal jar or substrate of glass, the inorganic thin film that has as the transparent ceramic performance of substrate of glass is formed on OLED or the OTFT.Therefore, the new method for packing of the instead existing packaging technology of thin film passivation becomes the center of gazing at.
In order to carry out this thin film passivation, by utilizing such as the chemical vapor deposition (CVD) of plasma reinforced chemical vapour deposition (PECVD), inductively coupled plasma chemical vapour deposition (CVD) (ICP-CVD), plasma enhanced atomic (PEALD) etc. and will be such as SiO such as the physical vapor deposition (PVD) of radio frequency (RF)/direct current (DC) sputter
x, SiN
x, SiON
x, Al
2O
3Be deposited on the research of carrying out on the OLED about raising property Deng inorganic thin film.Yet, because most methods has been utilized plasma, so OLED is impaired owing to be exposed to plasma.
Particularly, as widely used thin film passivation, the Barix multilayer coater of U.S. Vitex company adopts the DC sputter, and this DC sputter is equipped with the A1 target and carries out Al to utilize reactive sputtering
2O
3Thin film cladding.In the method, as shown in Figure 5, produced Ar ion and the collision of A1 target in plasma and the plasma, thereby sputtered the A1 particle.The A1 particle and the oxygen reaction that sputter, thus Al can on OLED, be formed
2O
3Film.At this moment, the particle that is present in the plasma has high-energy, and the A1 particle that sputters also has high-energy, and therefore the performance to OLED has influence.
This have high-octane particle and substrate collision, and energy is transferred to substrate, makes the temperature of substrate can be elevated to 200 ℃, therefore damaged the performance of organic film.Particularly, if having 100eV or above high-octane particle and organic film collision, then the structure of this organic film, optics and electric property are compromised.And if DC power increases with the high-speed rapid growth film, then plasma-exposed becomes more influential, so the aging acceleration of organic film, makes to be difficult to the high-speed rapid growth film for common DC/RF sputter.
In order to address this problem, as shown in Figure 6, Phillips company has proposed to utilize the SiN/SiO of PECVD
x/ SiN/SiO
x/ SiN (NONON) structure is as many thin film passivations structure.At this moment, nitride film and sull alternating deposit to be forming film thickly, but because film with low RF power deposition, so the density of film reduce, and because the process complexity, so be difficult to large-scale production.
And Korea S's electronics and telecommunication research institute (ETRI) have proposed a kind of method, and this method forms Al by plasma enhanced atomic (PEALD) method as thin film passivation method
2O
3Film.But, in this case, because form film, so the speed of film former is very low, to such an extent as to be difficult to large-scale production by alternating spray aluminium (Al) precursor on the unit of atomic layer and oxygen (O) precursor.
Summary of the invention
Therefore, in order to realize highdensity thin film passivation, have to utilize the physical vapor deposition (PVD) that is similar to sputter to come growing film, but organic film is subject to the influence of plasma-exposed.Yet, also do not propose a kind of new can be at the sputtering method that is used for thin film passivation that does not have to carry out under the situation of plasma-exposed sputter, therefore, its research and development are essential.
The present invention's conception addresses the above problem, and provide a kind of twin target sputter system and a kind of film forming method of this system of utilizing that is used for thin film passivation, wherein, magnet with the ladder arranged in form central authorities with increase central authorities plasma density, this and general facing targets sputtering rifle are different, therefore, not only can realize plasma damage free sputter process, and with the high-speed rapid growth film.
The present invention also provides a kind of twin target sputter system and a kind of film forming method of this system of utilizing that is used for thin film passivation, wherein, can not have to carry out sputter procedure under the situation of plasma-exposed.
Below explanation will be set forth other aspects of the present invention, and a part wherein will be apparent because of this description, maybe can arrive by practice knowledge of the present invention.
The invention discloses a kind of twin target sputter system that is used for thin film passivation, comprising: vacuum chamber; Substrate support, support base in vacuum chamber; A pair of sputter gun, each sputter gun be all towards substrate, and comprise to a side or the yoke plate opened of both sides and be arranged in a plurality of magnets on the yoke plate at interval with rule relatively; Target is installed on the pair of yoke plates respectively; The rifle supporting member supports a pair of sputter gun; And power supply, provide electric current to target, wherein, each in a plurality of magnets includes the upper and lower, and the upper and lower forms one and magnetic pole differs from one another, and a plurality of magnet is in line, and wherein, rifle supporting member or substrate support are indoor removable.
A pair of sputter gun can be toward each other.
Target can be installed in respectively on the relative both sides of a pair of sputter gun.
Substrate can comprise the large-scale substrate that is used for Organic Light Emitting Diode.
Rifle supporting member or substrate support can be according to the distances between the distance between the target, target and the substrate, spray into the ratio of indoor reacting gas or the power supplied with by power supply and moving with adjustable speed.
Film forming speed in the substrate can be according to the distance between the distance between the target, target and the substrate, spray into the ratio of indoor reacting gas or regulate by the power that power supply is supplied with.
The invention also discloses a kind of twin target sputter system that is used for thin film passivation, comprising: vacuum chamber; A plurality of substrate support support a plurality of substrates respectively in vacuum chamber; A pair of sputter gun, each sputter gun be all towards substrate, and comprise to a side or the yoke plate opened of both sides and be arranged in a plurality of magnets on the yoke plate at interval with rule relatively; Target is installed on the pair of yoke plates respectively; The rifle supporting member supports a pair of sputter gun; And power supply, provide electric current to target, wherein, in a plurality of magnets each includes the upper and lower, and the upper and lower forms one and magnetic pole differs from one another, and a plurality of magnet is in line, and wherein, sputter gun moves so that thin film passivation is carried out in each substrate indoor.
The translational speed of sputter gun can be according to the distance of film between distance, target and substrate between suprabasil formation speed and uniformity, the target, spray into the ratio of indoor reacting gas or regulated by the power that power supply is supplied with.
The invention also discloses a kind of twin target sputter system that is used for the ultrahigh speed thin film passivation, comprising: vacuum chamber; Substrate support is in the substrate of vacuum chamber internal support; A plurality of sputter guns, each sputter gun are all towards substrate, and comprise to a side or the yoke plate opened of both sides and be arranged in a plurality of magnets on the yoke plate at interval with rule relatively; Target is installed on the pair of yoke plates respectively; A plurality of rifle supporting members support a plurality of sputter guns respectively; And power supply, provide electric current to target, wherein, in a plurality of magnets each includes the upper and lower, and the upper and lower forms one and magnetic pole differs from one another, and a plurality of magnet is in line, and wherein, substrate is moved to be subjected to the thin film passivation of each sputter gun indoor.
The translational speed of substrate can be according to distance between distance, target and substrate between suprabasil formation speed and uniformity, the target of the quantity of sputter gun, film, spray into the ratio of indoor reacting gas or regulated by the power that power supply is supplied with.
A plurality of sputter guns can be separately installed with identical materials.
A plurality of sputter guns can be separately installed with different materials.
The thin film passivation of substrate can comprise multilayer.
Described multilayer can comprise the SiN/SiO/SiN/SiO film.
Described multilayer can comprise every layer of Al that all has 10nm or above thickness
2O
3, SiN
x, SiON, SiO
2, MgO, TaO and Al
2O
3: the N film.
Described multilayer can comprise such structure, and transparent inorganic thin film and monomer coated film repeat to form in this structure.
Described multilayer can comprise organic film and be selected from Al
2O
3, SiN
x, SiON, SiO
2, MgO, TaO and Al
2O
3: the multilayer mixed film of one or more inorganic thin films among the N.
The invention also discloses a kind of utilization and be used for the film forming method of twin target sputter system of thin film passivation, this twin target sputter system comprises: vacuum chamber; Substrate support is in the substrate of vacuum chamber internal support; Sputter gun towards substrate, and comprises to a side or the relative yoke plate opened of both sides and be arranged in a plurality of magnets on the yoke plate at interval with rule; Target is installed on the yoke plate respectively; The rifle supporting member, the supporting sputter gun; And power supply, providing electric current to target, this method comprises: substrate is installed on substrate support; According to the size of substrate and quantity, the quantity of magnet and the interval between the magnet of quantity adjustment sputter gun; Apply electric current to target; Produce plasma by target and sputter gun in the central authorities of target; And move substrate or sputter gun according to the situation of substrate and sputter gun.
Viewpoint of the present invention is as follows.
According to the twin target sputter system that is used for thin film passivation of the embodiment of the invention and utilize the film forming method of this system, magnet is with the ladder arranged in form, yoke plate forms the upper and lower, thereby not only can between target, form magnetic flux along a direction, and the magnetic flux density maximizing, therefore the high speed that is difficult to realize with general facing targets sputtering machine is carried out thin film passivation process.As shown in Figure 7, if magnet with the ladder arranged in form, therefore then middle body is full of magnet, can increase the magnetic flux density of middle body, and middle body is empty in general facing targets sputtering machine.
According to embodiments of the invention, a kind of new sputtering system is provided, wherein, the high-octane particle that has that utilizes sputter to produce in thin film passivation process is limited between the target, thereby can carry out the harmless process of plasma.In addition, unlike the facing targets sputtering rifle, the magnet of ladder form is added to middle body, so that the magnetic flux density maximization of central authorities, therefore with the high-speed rapid growth film.
Unlike facing targets sputtering machine (FTS), twin target sputter (TTS) according to the embodiment of the invention is a kind of new system that is used for thin film passivation, wherein, therefore the magnet that is furnished with the ladder form has improved plasma density and film growth rates to increase the magnetic flux density of target middle body.In addition, the high density magnetic field that high-octane charged particle formed between the target that has that produces in the sputter procedure limits, and therefore carries out thin film passivation under the situation that does not influence organic film.And the dual-target sputtering rifle is by modularization, thereby can realize the process of large-scale thin film passivation by the dual-target sputtering rifle of mobile substrate or mobile moduleization.
According to embodiments of the invention, at the Al that on OLED or OTFT, forms 100nm or above thickness by dual-target sputtering
2O
3, SiN
x, SiON
x, MgO and SiO
xUnder the situation of transparent membrane, the infringement that the thin film passivation that is carried out has high-quality and do not cause because of plasma-exposed.Afterwards,, therefore exempted existing substrate of glass that is used to encapsulate or metal can, therefore made OLED or OTFT extremely thin by the OLED or the protected moisture or the air penetration that prevents the outside of OTFT of preceding method with thin-film package.And film makes the comparable existing thin film passivation process of this thin film passivation process carry out faster to form at a high speed, has therefore reduced production cost and the machining period of making diode.
Use has the twin target sputter of this structure, and to encapsulate OLED and OTFT at a high speed, the not infringement that causes because of plasma-exposed has reduced the time of making high-quality OLED and OTFT cost, and has promoted the size of OLED to maximize with film.
The generality description and the following detailed description that should be understood that the front are exemplary and explanat, and aim to provide claimed of the present invention further specifying.
Description of drawings
Included further understanding of the present invention being provided and incorporating into and the accompanying drawing that constitutes the part of this specification shows exemplary embodiment of the present invention, and with describe one and be used from and explain each side of the present invention.
Fig. 1 shows the principle of magnetoelectric tube device.
Fig. 2 is the perspective view of the box-like facing targets sputtering assembly of tradition.
Fig. 3 shows the cross-sectional view of the structure of traditional facing targets sputtering machine.
Fig. 4 shows the inorganic thin film with ceramic performance, substituted metal jar or substrate of glass, and this inorganic thin film is formed on Organic Light Emitting Diode (OLED) or the OTFT (OTFT) traditionally.
Fig. 5 shows the coating that forms by conventional thin film passivation method.
Fig. 6 shows the coating that forms by traditional plural layers passivating method.
Fig. 7 shows the plasma damage free sputter gun according to the magnet array with ladder form of the embodiment of the invention.
Fig. 8 shows the curve chart of magnetic flux density in the distribution of target central authorities.
Fig. 9 shows the structure according to the twin target sputter system that is used for thin film passivation of the embodiment of the invention.
Figure 10 shows the structure that utilizes the twin target sputter system that the rifle module scans according to the embodiment of the invention.
Figure 11 shows a plurality of modular pair of target rifle that is installed in internal system according to the embodiment of the invention.
Figure 12 shows the twin target sputter system of utilizing multilayer to realize thin film passivation.
Figure 13 shows the twin target sputter in the hybrid thin film passivation of being used in according to the embodiment of the invention.
Figure 14 shows reference sample OLED and the curve chart by the life-span comparing result between the OLED that carries out thin film passivation according to the twin target sputter of the embodiment of the invention.
Embodiment
Hereinafter more fully describe the present invention, wherein, show exemplary embodiment of the present invention with reference to accompanying drawing.But the present invention can multiple different form implement, and explains the present invention should not limiting as the exemplary embodiment that proposes herein.On the contrary, it is in order to make the present invention fully open that these exemplary embodiments are provided, and scope of the present invention is conveyed to those skilled in the art fully.Among the figure, for clear, the size and the relative size in scalable layer and zone.
Among the figure, identical reference number is represented components identical.
Fig. 7 shows the plasma damage free sputter gun according to the magnet array with ladder form of the embodiment of the invention, and Fig. 8 shows the distribution of magnetic flux density in target central authorities.
Here, when thin cast iron yoke plate is attached to the upper and lower of magnet array of the magnetic flux that is used for evenly distributing, between target, be formed uniformly high density flux.According to embodiments of the invention, sputter gun comprises to a side or the relative yoke plate opened of both sides and be arranged in a plurality of magnets on the yoke plate at interval with rule.In described a plurality of magnet each includes the upper and lower, and the upper and lower forms one but magnetic pole differs from one another.
Described a plurality of magnet is in line.
At this moment, when DC or RF electric power being offered simultaneously two target, form high-density plasma in the central authorities of target, and therefore owing to high-speed sputtering takes place high-density plasma.Particularly, because target is formed on the high-density plasma institute sputter of central authorities, so the utilance of target improves.In addition, because magnetic flux is by concentrated, so than general facing targets sputtering machine, charged particle is more effectively being limited simultaneously so that high speed is film forming.Therefore, can solve the problem of the low speed film growth in the existing facing targets sputtering machine.
Fig. 9 shows the structure according to the twin target sputter system that is used for thin film passivation of the embodiment of the invention, this twin target sputter system comprise can high-speed film the dual-target sputtering rifle 300 of growth, and Figure 10 shows the structure of twin target sputter system, wherein, utilize rifle module to scan according to the embodiment of the invention.
In the structure shown in Fig. 9 and 10, the rifle module has following structure: target 310 is installed on the dual-target sputtering rifle 300 of Fig. 7.
Referring to Fig. 9 and 10, the twin target sputter system that is used for thin film passivation comprises: the vacuum chamber 400 that is full of reacting gas; The substrate support 402 of support base 401 in vacuum chamber 400; Towards substrate 401 and to a side or the relative sputter gun 300 of both-side opening; Be installed in the target 310 on the pair of yoke plates respectively; The rifle supporting member (not shown) of supporting sputter gun 300 and the power supply 500 that electric current is provided to target 310.
As Fig. 9 and shown in Figure 10, target 310 is installed in respectively on the relative both sides of a pair of sputter gun 300.
Material (Si, Al, Ta, the SiO of the required target of thin film passivation 310 are housed in this rifle inside modules
2, Al
2O
3, MgO and TaO) and handle gas (Ar, O
2, N
2, N
2O, He and H
2) by after being sprayed in the chamber 400, when being applied to RF or DC electric power on two targets 310 simultaneously, between target, produce high-density plasma.The plasma that is produced causes taking place in the target sputter, and the particle that sputters with handle gas and in substrate, react, therefore go up and form thin film passivation in substrate 401 (that is, at Organic Light Emitting Diode (OLED)).
Here, according to the distance between the distance between the target, target and the substrate, spray into the ratio of the reacting gas in the chamber 400 or regulate film growth rates by the power that power supply is supplied with.Inert gas (Ar, Ne, Xe, Kr and He) sprays by the gas nozzle that is installed between the target, and the particle that sputters is transported to substrate 401, therefore to form film at a high speed.Substrate 401 or rifle module move by delivery unit (not shown) straight line, have therefore guaranteed the large-size uniform film.
As shown in figure 10, if modular pair of target rifle scans, then carry out thin film passivation immediately at large-scale OLED or a plurality of OLED.Here, sweep speed is the factor of control film growth rates and uniformity of film.
Form film with ultrahigh speed if desired, a plurality of modular pair of target rifles then can be set, as shown in figure 11 in system.Figure 11 shows a plurality of modular pair of target rifle that is installed in internal system according to the embodiment of the invention.
Determine to have under the situation of quantity of two target rifles of same material considering required film growth rates, when the OLED straight line on being installed to substrate support 402 moves, because each rifle all carries out the high-speed sputtering process, so the short time can form thick film.At this moment, because the dual-target sputtering rifle has limited plasma, thus can not increase the temperature of substrate, and OLED can be owing to plasma-exposed wears out.
And, can be applicable to use in various materials multilayer coated according to the twin target sputter of the embodiment of the invention.
For example, as shown in figure 12, it shows and utilizes multilayer to carry out the twin target sputter system of thin film passivation, the modular rifle that is used for thin film passivation is equipped with different materials respectively, adopt SiO and SiN film as multilayer (SiN/SiO/SiN/SiO), and scanning OLED, thereby utilize the thin film passivation of multilayer to finish need not to use under the situation of a plurality of chambers.
Figure 13 shows the twin target sputter in the hybrid thin film passivation of being used in according to the embodiment of the invention.
At first, form transparent inorganic thin film by the twin target sputter according to the embodiment of the invention, afterwards, diode is sent to monomer chamber, applies this device with monomer thus.The diode that is coated with monomer cures in vulcanizing chamber (Curing chamber), and turns back to twin target sputter, and is coated thus with transparent inorganic thin film.Repeat these processes, thereby can reach hybrid thin film passivation.At this moment, twin target sputter is carried out the coating procedure of transparent inorganic thin film with high speed, thereby can finish the high-speed mixing thin film passivation.
With reference to Figure 14, will utilize the packaged OLED of thin film passivation and not have the OLED of thin film passivation to compare by aforesaid twin target sputter according to the embodiment of the invention aspect the life-span.
Figure 14 shows reference sample OLED and the curve chart by the life-span comparing result between the OLED that carries out thin film passivation according to the twin target sputter of the embodiment of the invention.
As shown in figure 14, under situation about by the twin target sputter according to the embodiment of the invention high-quality transparent inorganic thin film being deposited on OLED or the OTFT, its life-span that has is longer than the life-span of reference sample OLED or OTFT.
The said method of existing embodiment can be stored in any type of recording medium according to the present invention, as CD-ROM, RAM, ROM, floppy disk, hard disk or magneto optical disk, or with any computer-reader form storage, as weaves into the computer code of executable program.The description of the method for storage exemplary embodiment of the present is known in the prior art, and will be omitted.
Industrial applicibility
Obviously find out from the above description, the invention provides and a kind ofly be used for the twin target sputter system of thin film passivation and utilize the film forming method of this system, wherein, can form OLED and OTFT by simple thin-film technique, and need not to use the encapsulation process of existing metal can or substrate of glass, simplify technology thus and reduced the initial investment cost that is used to make OLED.
In addition, under the sputtering system according to the embodiment of the invention is applied to situation in the thin film passivation process, can shortens by the high-speed film growth and form the time that film consumed.Because the injection that the employed plasma density of twin target sputter is higher than the plasma density of general facing targets sputtering machine and is based on gas nozzle comes film forming, so realized the high-speed film passivation, not only shorten the film forming time thus, and formed the high density transparent inorganic thin film.
And, more effectively limited according to the sputtering system of the embodiment of the invention and to have had high-octane charged particle, eliminated the plasma damage that in the thin film passivation process of general DC/RC sputter, occurs thus.For example, the magnet array of ladder form has increased the central flux density of middle body and has made magnetic flux density concentrate on middle body, makes that having high-octane charged particle is limited between the target.Therefore, even DC/RF power height also can be realized plasma damage free sputter technology.
In addition, be used under the situation of the transparent inorganic thin film of depositing high-quality on OLED and the OTFT, can making long-life OLED and OTFT in sputtering system according to the embodiment of the invention.And the inorganic thin film that deposits by high-density plasma has the feasible moisture and the oxygen infiltration that can prevent from the outside of high density, has increased the life-span of diode thus.
Simultaneously, utilization can be applicable to the manufacture process of large-scale organic LED display device according to the thin film passivation of the sputtering system of the embodiment of the invention.Because equipment does not exist and the process difficulty, so utilize the encapsulation process of existing metal can or substrate of glass to can be applicable to surpass the substrate in the 4th generation hardly.On the other hand, because the size of rifle module can freely change according to magnet array, so can be applicable to make the thin film passivation of large-scale OLED according to the sputtering system of the embodiment of the invention.
In addition, according to embodiments of the invention, can make large-scale OLED display unit by move left and right sputter gun or substrate.
In addition,, then can form the large scale film in ultrahigh speed ground in twin target sputter system, carry out thin film passivation process with ultrahigh speed thus if a plurality of sputter gun modules are set.
In addition, in twin target sputter system, be provided with under the situation of a plurality of sputter gun modules, if used different materials and used corresponding processing gas for target, then can be in the process of the plural layers of an indoor different materials of growing.
It will be apparent to one skilled in the art that under the situation that does not deviate from the spirit and scope of the present invention, can do various modifications and changes the present invention.Therefore, this means that then these modifications and changes are contained in the present invention if modifications and variations of the present invention are in the scope of claims and equivalent thereof.
Claims (29)
1. twin target sputter system that is used for thin film passivation comprises:
Vacuum chamber;
Substrate support is in the substrate of described vacuum chamber internal support;
A pair of sputter gun, each sputter gun be all towards described substrate, and comprise to a side or the yoke plate opened of both sides and be arranged in a plurality of magnets on the described yoke plate at interval with rule relatively;
Target is installed in respectively on a pair of described yoke plate;
The rifle supporting member supports described a pair of sputter gun; And
Power supply provides electric current to described target,
Wherein, in described a plurality of magnet each includes the upper and lower, and described upper and lower forms one and magnetic pole differs from one another, and described a plurality of magnet is in line, and wherein, described rifle supporting member or described substrate support are described indoor removable.
2. twin target sputter system according to claim 1, wherein, described a pair of sputter gun toward each other.
3. twin target sputter system according to claim 2, wherein, described target is installed in respectively on the relative both sides of described a pair of sputter gun.
4. twin target sputter system according to claim 3, wherein, described substrate comprises the large-scale substrate that is used for Organic Light Emitting Diode.
5. twin target sputter system according to claim 4, wherein, described rifle supporting member or described substrate support according to the distance between the distance between the described target, described target and the described substrate, spray into the ratio of described indoor reacting gas or the power supplied with by described power supply and moving with adjustable speed.
6. twin target sputter system according to claim 4, wherein, film forming speed in the described substrate according to the distance between the distance between the described target, described target and the described substrate, spray into the ratio of described indoor reacting gas or the power supplied with by described power supply and scalable.
7. twin target sputter system that is used for thin film passivation comprises:
Vacuum chamber;
A plurality of substrate support support a plurality of substrates respectively in described vacuum chamber;
A pair of sputter gun, each sputter gun be towards separately substrate, and comprise to a side or the yoke plate opened of both sides and be arranged in a plurality of magnets on the described yoke plate at interval with rule relatively;
Target is installed in respectively on a pair of described yoke plate;
The rifle supporting member supports described a pair of sputter gun; And
Power supply provides electric current to described target,
Wherein, in described a plurality of magnet each includes the upper and lower, and described upper and lower forms one and magnetic pole differs from one another, and described a plurality of magnet is in line, and wherein, described sputter gun is described indoor moving so that thin film passivation is carried out in each described substrate.
8. twin target sputter system according to claim 7, wherein, described a pair of sputter gun toward each other.
9. twin target sputter system according to claim 8, wherein, described target is installed in respectively on the relative both sides of described a pair of sputter gun.
10. twin target sputter system according to claim 9, wherein, described substrate comprises the substrate that is used for Organic Light Emitting Diode.
11. twin target sputter system according to claim 10, wherein, the translational speed of described sputter gun according to the distance between distance, described target and the described substrate between the formation speed of described suprabasil film and uniformity, the described target, spray into the ratio of described indoor reacting gas or the power supplied with by described power supply and scalable.
12. a twin target sputter system that is used for the ultrahigh speed thin film passivation comprises:
Vacuum chamber;
Substrate support is in the substrate of described vacuum chamber internal support;
A plurality of sputter guns, each sputter gun are all towards described substrate, and comprise to a side or the yoke plate opened of both sides and be arranged in a plurality of magnets on the described yoke plate at interval with rule relatively;
Target is installed in respectively on a pair of described yoke plate;
A plurality of rifle supporting members support described a plurality of sputter gun respectively; And
Power supply provides electric current to described target,
Wherein, in described a plurality of magnet each includes the upper and lower, and described upper and lower forms one and magnetic pole differs from one another, and described a plurality of magnet is in line, and wherein, described substrate is described indoor moving to be subjected to the thin film passivation of each described sputter gun.
13. twin target sputter system according to claim 12, wherein, paired sputter gun toward each other.
14. twin target sputter system according to claim 13, wherein, described target is installed in respectively on the relative both sides of described paired sputter gun.
15. twin target sputter system according to claim 14, wherein, described substrate comprises the large-scale substrate that is used for Organic Light Emitting Diode.
16. twin target sputter system according to claim 15, wherein, the translational speed of described substrate according to distance between distance, described target and described substrate between suprabasil formation speed and uniformity, the described target of the quantity of described sputter gun, described film, spray into the ratio of described indoor reacting gas or the power supplied with by described power supply and scalable.
17. twin target sputter system according to claim 16, wherein, described a plurality of sputter guns are separately installed with identical materials.
18. twin target sputter system according to claim 17, wherein, described a plurality of sputter guns are separately installed with different materials.
19. twin target sputter system according to claim 18, wherein, the thin film passivation of described substrate comprises multilayer.
20. twin target sputter system according to claim 19, wherein, described multilayer comprises the SiN/SiO/SiN/SiO film.
21. twin target sputter system according to claim 19, wherein, described multilayer comprises Al
2O
3, SiN
x, SiON, SiO
2, MgO, TaO and Al
2O
3: the N film, wherein every layer all has 10nm or above thickness.
22. twin target sputter system according to claim 19, wherein, described multilayer comprises the structure that transparent inorganic thin film and monomer coated film repeat to form.
23. twin target sputter system according to claim 19, wherein, described multilayer comprises the mixed film of organic film and one or more inorganic thin films, and described one or more inorganic thin films are selected from the Al that all has 10nm or above thickness
2O
3, SiN
x, SiON, SiO
2, MgO, TaO and Al
2O
3: the N film.
24. the film forming method of twin target sputter system that utilization is used for thin film passivation, described twin target sputter system comprises: vacuum chamber; Substrate support is in the substrate of described vacuum chamber internal support; Sputter gun, towards described substrate, and comprise to a side or the relative yoke plate opened of both sides and be arranged in a plurality of magnets on the described yoke plate at interval with rule, in described a plurality of magnet each includes the upper and lower, described top and described bottom formation one and the magnetic pole that has differ from one another, and described a plurality of magnet is in line; Target is installed in respectively on the described yoke plate; The rifle supporting member supports described sputter gun; And power supply, providing electric current to described target, described method comprises:
On described substrate support, substrate is installed;
Quantity, the quantity of described magnet and the interval between the magnet of adjusting described sputter gun according to the size and the quantity of described substrate;
Apply electric current to described target;
Produce plasma by described target and described sputter gun in the central authorities of described target; And
Situation according to described substrate and described sputter gun moves described substrate or described sputter gun.
25. method according to claim 24, wherein, described substrate comprises the large-scale substrate that is used for organic light-emitting display device.
26. method according to claim 24, wherein, described substrate or described sputter gun can move.
27. method according to claim 26, wherein, the quantity of described sputter gun increases or reduces in described suprabasil formation speed or uniformity according to described film.
28. method according to claim 27 wherein, provide a plurality of described sputter guns, and a plurality of sputter gun is separately installed with identical materials.
29. method according to claim 27 wherein, provide a plurality of described sputter guns, and a plurality of sputter gun is separately installed with different materials.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2007-0039856 | 2007-04-24 | ||
| KR1020070039856A KR20080095413A (en) | 2007-04-24 | 2007-04-24 | Twin target sputter system for thin film passivation and method of forming a film using the same |
| KR1020070039856 | 2007-04-24 | ||
| PCT/KR2008/002337 WO2008130205A1 (en) | 2007-04-24 | 2008-04-24 | Twin target sputter system for thin film passivation and method of forming film using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101681816A CN101681816A (en) | 2010-03-24 |
| CN101681816B true CN101681816B (en) | 2011-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800176586A Expired - Fee Related CN101681816B (en) | 2007-04-24 | 2008-04-24 | Twin target sputter system for thin film passivation and method of forming film using the same |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20080095413A (en) |
| CN (1) | CN101681816B (en) |
| TW (1) | TW200848536A (en) |
| WO (1) | WO2008130205A1 (en) |
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| KR101105332B1 (en) * | 2010-02-11 | 2012-01-16 | 성균관대학교산학협력단 | Apparatus of facing target sputtering and method for synthesizning crystalline silicon thin films at lower temperature using the same |
| US10020187B2 (en) * | 2012-11-26 | 2018-07-10 | Applied Materials, Inc. | Apparatus and methods for backside passivation |
| KR102150456B1 (en) * | 2013-04-30 | 2020-09-01 | 주식회사 선익시스템 | Apparatus and method for sputtering |
| US10233537B2 (en) | 2014-04-23 | 2019-03-19 | Zhongao Huicheng Technology Co., Ltd. | Artificial joint cup, magnetic control sputtering coating film device and preparation method thereof |
| CN104224409B (en) * | 2014-04-23 | 2017-11-07 | 中奥汇成科技股份有限公司 | A kind of joint prosthesis mortar cup, magnetic control sputtering film plating device and preparation method thereof |
| KR20160115783A (en) | 2015-03-27 | 2016-10-06 | 순천향대학교 산학협력단 | Sputter apparatus |
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| JPH04344662A (en) * | 1991-05-22 | 1992-12-01 | Ricoh Co Ltd | Both-side paper feeding device |
| JPH11117066A (en) * | 1997-10-14 | 1999-04-27 | Matsushita Electric Ind Co Ltd | System and method for sputtering |
| JP2001032067A (en) * | 1999-07-22 | 2001-02-06 | Sanyo Shinku Kogyo Kk | Magnet for film formation, film forming method using it and device therefor |
-
2007
- 2007-04-24 KR KR1020070039856A patent/KR20080095413A/en not_active Application Discontinuation
-
2008
- 2008-04-24 TW TW097114990A patent/TW200848536A/en unknown
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- 2008-04-24 WO PCT/KR2008/002337 patent/WO2008130205A1/en active Application Filing
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| JP特开2000-104167A 2000.04.11 |
| JP特开2001-32067A 2001.02.06 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101681816A (en) | 2010-03-24 |
| TW200848536A (en) | 2008-12-16 |
| KR20080095413A (en) | 2008-10-29 |
| WO2008130205A1 (en) | 2008-10-30 |
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