CN101675538A - 半导体发光装置 - Google Patents
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Abstract
本发明提供了一种半导体发光装置。半导体发光装置(A)包括具有一定的厚度的引线框(1)、由上述引线框(1)支承的半导体发光元件(2)、覆盖上述引线框(1)的一部分的壳体(4)、覆盖上述半导体发光元件(2)的透光部件(5)。上述引线框(1)包含芯片接合垫(11a)和***部(11b)。上述芯片接合垫(11a)具有搭载上述半导体发光元件(2)的表面和从上述壳体(4)露出的背面。上述***部(11b)设置为在上述芯片接合垫(11a)的上述表面的法线方向,从上述芯片接合垫(11a)偏置。
Description
技术领域
本发明涉及具备半导体发光元件的半导体发光装置。
背景技术
图6表示现有的半导体发光装置的一例(例如参照专利文献1)。该图所示的半导体发光装置X包括引线框91、LED芯片92、壳体93和透光部件94。引线框91包含两个框部件91A、91B。第一框部件91A与第二框部件91B相比较厚,在其表面,搭载LED芯片92。LED芯片92通过导线95与第二框部件91B连接。壳体93例如为白色树脂制成。透光部件94填入被壳体93包围的空间,覆盖LED芯片92。在透光部件94,形成用于提高由LED芯片92射出的光的指向性的透镜94a。
半导体发光装置X在动作时在LED芯片92产生热。这种热会妨碍半导体发光装置X的稳定的动作,必须从LED芯片92散开。使第一框部件91A较厚,是促进从LED芯片92散热的一种方法。但是,框部件91A越厚,半导体发光装置X会整体变厚。
专利文献1:日本特开2007-67443号公报
发明内容
本发明是基于上述问题提出的。本发明的课题为提供在促进半导体发光元件的散热的同时能够实现薄型化的半导体发光装置。
本发明提供的半导体发光装置包括具有一定厚度的引线框,被上述引线框支承的半导体发光元件,覆盖上述引线框的一部分的壳体,覆盖上述半导体发光元件的透光部件。上述引线框包含芯片接合垫和***部。上述芯片接合垫具有搭载上述半导体发光元件的表面和从上述壳体露出的背面。上述***部在上述芯片接合垫的上述表面的法线方向,从上述芯片接合垫偏置。
根据这样的结构,由上述半导体发光元件至上述半导体发光装置的背面的尺寸为上述引线框的厚度。上述引线框例如为通过折曲加工能够容易地形成上述***部的较薄的部件。从而,能够实现上述半导体发光装置的薄型化。此外,由于搭载了上述半导体发光元件的芯片接合垫的背面从上述壳体露出,能够使来自上述半导体发光装置的热向外部有效地发散。进而,上述***部适合例如使用毛细管将与上述半导体发光元件连接的导线接合,以及例如搭载齐纳二极管等使上述半导体发光装置高功能化的电子元件。
优选上述引线框包括连接上述芯片接合垫和上述***部的易变形部。例如,该易变形部包括矩形的框状部、第一和第二桥接部。上述第一桥接部将上述框状部和上述芯片接合垫相互连接,上述第二桥接部将上述框状部和上述***部相互连接。根据这样的结构,通过对于上述引线框的折曲加工,能够容易并且适当地形成上述***部。
本发明的其他特征和优点,参照附图根据以下的详细说明,能够更加清晰。
附图说明
图1是表示基于本发明的半导体发光装置的一例的俯视图。
图2是图1的II-II线截面图。
图3是表示本发明的半导体发光装置的仰视图。
图4是表示用于本发明的半导体发光装置的引线框的俯视图。
图5是表示上述引线框的侧视图。
图6是表示现有的半导体发光装置的一例的截面图。
具体实施方式
图1~图3表示基于本发明的半导体发光装置的一例。图示的半导体发光装置A包括引线框1、LED芯片2、齐纳二极管3、壳体4、透光部件5。
引线框1例如为Cu、Ni或者其合金制成,包含第一框部件11和第二框部件12。引线框1例如对板状的材料进行冲压加工形成,厚度为固定值。
图4和图5是说明引线框1的结构的,省略了透光部件5,以虚线表示壳体4。如这些图所示,第一框部件11具有芯片接合垫11a、第一***部11b、易变形部11c、一个端子11d和两个端子11e。芯片接合垫11a是呈面积较大的矩形的部分,在其表面接合有LED芯片2。第一***部11b是例如在折曲加工后比其以外的部分在朝向芯片接合垫11a的上述表面的方向(法线方向)上偏置的部分。易变形部11c是连接芯片接合垫11a和第一***部11b的部分。图示的示例中,易变形部11c由矩形的框状部和直线状的两个桥接部构成。第一桥接部将上述框状部和芯片接合垫11a相互连接,第二桥接部将上述框状部和第一***部11b相互连接。端子11d、11e是从壳体4露出的部分,用于将半导体发光装置A安装在回路基板等上。端子11d、11e作为阳极端子使用。如图3所示,芯片接合垫11a的背面从壳体4露出。易变形部11c的接近芯片接合部11a的部分从壳体4露出。
如图2和图4所示,第二框部件12具有第二***部12b和端子12d。第二***部12b是例如在折曲加工后比其以外的部分向与上述第一***部11b相同的方向偏置的部分。图示的示例中,使第一***部11b和第二***部12b的偏置量相同。端子12d是从壳体4露出的部分,作为阴极端子使用。
LED芯片2是半导体发光装置A的光源,被芯片接合在芯片接合垫11a的表面。LED芯片2具有例如叠层有GaN等组成的半导体层的结构,通过在被夹持在n型半导体层和p型半导体层之间的活性层使电子和空穴再接合而发出规定波长的光。LED芯片2通过导线6与***部12b连接。
齐纳二极管3用于防止对LED芯片2施加过大的电压,具有当施加一定以上电压时通过齐纳屈服使电流流过的功能。齐纳二极管3搭载在第一***部11b上,通过导线6与第二***部12b连接。
壳体4例如由白色树脂组成,如图1~图3所示,覆盖引线框1的一部分。在壳体4形成有反射器4a。反射器4a为越向着朝向引线框1的表面的方向直径越变大的锥状,包围LED芯片2。由LED芯片2向侧方发出的光通过反射器4a沿着朝向引线框1的表面的方向被反射。
透光部件5使来自LED芯片2的光透过,例如由三个树脂层51、52、53组成。第一树脂层51由混入荧光体的硅树脂组成。该荧光体例如通过将来自LED芯片2的蓝色光作为激励光吸收,发出黄色光。第二树脂层52由透明的硅树脂组成。第三树脂层53由分散了扩散剂的硅树脂组成。第三树脂层53例如通过促进来自LED芯片3的蓝色光和上述黄色光的混色,射出鲜明的白色光。在透光部件5,形成有透镜5a。透镜5a通过将从LED芯片2前进的光折射,提高其指向性。
下面,对半导体发光装置A的作用进行说明。根据上述实施例,搭载有LED芯片2的芯片接合垫11a的背面从壳体4露出。因此,从LED芯片2到半导体发光装置A的背面的尺寸为第一框部件11的厚度。第一框部件11是通过折曲加工能够容易地形成第一***部11b的较薄的部件。从而,能够实现半导体发光装置A的薄型化。
形成框1的材质与现有的框使用的材质相同即可。即使在这样的情况下,由于在半导体发光装置A的背面一侧芯片接合垫11a露出到外部,有利于发散LED芯片2的热。
由于第一和第二***部11b、12b在框1的表面一侧***,其各部分从壳体4露出。第二***部12b的露出部,适合例如使用毛细管将导线6二次接合。此外,第一***部11b的露出部适合搭载齐纳二极管3等使半导体发光装置A高功能化的部件。
易变形部11c构成为在形成第一***部11b时,在朝向框1的表面的方向容易地折曲,并且能够伸长。因此,在形成第一***部11b的折曲加工时,能够防止端子11d由需要的位置不当地偏向芯片接合垫11a一侧。
Claims (3)
1.一种半导体发光装置,其特征在于,包括:
具有固定厚度的引线框;
由所述引线框支承的半导体发光元件;
覆盖所述引线框的一部分的壳体;和
覆盖所述半导体发光元件的透光部件,
所述引线框包括芯片接合垫和***部,所述芯片接合垫具有搭载所述半导体发光元件的表面和从所述壳体露出的背面,所述***部在所述芯片接合垫的所述表面的法线方向,从所述芯片接合垫偏置。
2.如权利要求1所述的半导体发光装置,其特征在于:
所述引线框包括连接所述芯片接合垫和所述***部的易变形部。
3.如权利要求2所述的半导体发光装置,其特征在于:
所述易变形部包括矩形的框状部、以及第一和第二桥接部,所述第一桥接部将所述框状部和所述芯片接合垫相互连接,所述第二桥接部将所述框状部和所述***部相互连接。
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JP2007092880A JP4795293B2 (ja) | 2007-03-30 | 2007-03-30 | 半導体発光装置 |
PCT/JP2008/055536 WO2008123232A1 (ja) | 2007-03-30 | 2008-03-25 | 半導体発光装置 |
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CN101546795B (zh) * | 2008-03-25 | 2011-02-16 | 旭丽电子(广州)有限公司 | 半导体发光元件 |
DE102008048259A1 (de) * | 2008-09-22 | 2010-04-08 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Bauteil |
JP2012004596A (ja) * | 2010-01-29 | 2012-01-05 | Toshiba Corp | Ledパッケージ及びその製造方法 |
JP4951090B2 (ja) | 2010-01-29 | 2012-06-13 | 株式会社東芝 | Ledパッケージ |
KR101719644B1 (ko) | 2010-05-24 | 2017-04-04 | 서울반도체 주식회사 | Led패키지 |
CN102610602A (zh) * | 2011-01-25 | 2012-07-25 | 四川柏狮光电技术有限公司 | 单一封装材质高解析度led光源及其制备工艺 |
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KR102374676B1 (ko) * | 2015-01-05 | 2022-03-16 | 서울반도체 주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
KR102426874B1 (ko) * | 2015-08-28 | 2022-07-29 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지 |
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-
2007
- 2007-03-30 JP JP2007092880A patent/JP4795293B2/ja active Active
-
2008
- 2008-03-25 WO PCT/JP2008/055536 patent/WO2008123232A1/ja active Application Filing
- 2008-03-25 CN CN200880014656A patent/CN101675538A/zh active Pending
- 2008-03-25 US US12/593,836 patent/US8334548B2/en active Active
- 2008-03-28 TW TW097111462A patent/TW200905927A/zh unknown
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WO2008123232A1 (ja) | 2008-10-16 |
US20100044737A1 (en) | 2010-02-25 |
US8334548B2 (en) | 2012-12-18 |
JP2008251938A (ja) | 2008-10-16 |
TW200905927A (en) | 2009-02-01 |
JP4795293B2 (ja) | 2011-10-19 |
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