CN101662266A - Micro low-temperature co-fired ceramic duplexer used for GSM/DCS - Google Patents
Micro low-temperature co-fired ceramic duplexer used for GSM/DCS Download PDFInfo
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- CN101662266A CN101662266A CN200910054906A CN200910054906A CN101662266A CN 101662266 A CN101662266 A CN 101662266A CN 200910054906 A CN200910054906 A CN 200910054906A CN 200910054906 A CN200910054906 A CN 200910054906A CN 101662266 A CN101662266 A CN 101662266A
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Abstract
The invention relates to a micro low-temperature co-fired ceramic duplexer used for a GSM/DCS, belonging to the technical field of wireless communication elements and comprising a high-pass filteringpart and a low-pass filtering part, wherein the input end of the high-pass filtering part and the input end of the low-pass filtering part are connected in parallel as public antenna ports; the outputend of the high-pass filtering part is taken as a high-frequency output port, and the output end of the low-pass filtering part is taken as a low-frequency output port. The invention enables that theduplexer can be flexibly allocated in three-dimensional space by adopting a multilayer micro low-temperature co-fired ceramic technology, thereby leading the structure to be more compact and achieving the miniaturization aim. The allocation of the micro low-temperature co-fired ceramic duplexer can reduce the parasitic capacitance effect to large extent in the circuit operation and ensures that the parasitic capacitance part is added in an allocated capacitor, and the quantity value of the capacitor of the parasitic capacitance part is still equal to the originally-designed quantity value.
Description
Technical field
What the present invention relates to is the device in a kind of wireless communication technique field, specifically is the micro low-temperature co-fired ceramic duplexer of a kind of GSM/DCS of being used for.
Background technology
Along with the continuous development of mobile communication system and perfect day by day; requirement to mobile communication equipment is also more and more higher; constantly promoting mobile telephone system to miniaturization, multimodeization; simultaneously compatible GSM900, DCS1800, PCS, IS-95 and 3G system; and the high performance direction develops, and develops to the direction of low cost, miniaturization, high band thereby promoting duplexer.
In mobile communication system, the reception of wireless signal and transmission all need to pass through antenna.If give receiver and antenna of each dispensing of sender, not only increased cost, volume, and also can the phase mutual interference between the antenna transmission signal.So wish the public common antenna of transmitting-receiving, this just need use duplex technology.Briefly, duplexer is exactly to solve the transmit-receive sharing common antenna and make its not interactional problem and the microwave device that designs, and it has become one of important component in the communication system.Duplexer has three ports, and its effect is that the Signal Separation that will work in different frequency range comes, and signal is sent in the corresponding connectivity port.And LTCC (LTCC) technology can be embedded in resistance, inductance, electric capacity among the LTCC, forms the duplexer of three-dimensional structure.Can dwindle the volume of module significantly like this, this material has high reliability simultaneously, has also just brought the flexibility in the design.
Find through literature search prior art, Patent document number CN1661912A has proposed a kind of duplexer lump prototype that can suppress respectively a plurality of band signals losses of transmitting along high-pass filtering part side and low-pass filtering part side, from its lump prototype as can be seen, four resonators and two capacitor and inductors have been introduced in the patent, caused element too much like this, but this has also just caused when converting reality production and processing model to, disturb excessive between the element, thereby have a strong impact on the performance of duplexer, too much like this element also is unfavorable for the miniaturization of duplexer simultaneously, and as can be seen from the simulation result that provides subsequently, though duplexer can reach the high requirement of isolating, but it is relatively big to insert loss, this just causes this lump prototype can't really be widely used in practice, and a kind of theoretic reference can only be provided.
In addition, american documentation literature US2003/0058063A1 and Patent document number US2006/0006960A1 all relate to the many ground plates of use with the isolating circuit element, do effective mutual coupling and the ghost effect that has intercepted between the circuit element although it is so, but also strengthened board area on the other hand, for miniaturized device, can't implement above-mentioned technology.
Summary of the invention
The present invention is directed to the prior art above shortcomings, the micro low-temperature co-fired ceramic duplexer of a kind of GSM/DCS of being used for is provided, the resonator structure that adopts can produce transmission zero in corresponding filter passband, thereby can guarantee that signal is independent of each other in two passbands, and the introducing of its transmission zero has reduced element, improve performance, simplified design; The introducing of transmission coefficient maximum point has improved the pass-band performance of high-pass filtering part; Duplexer adopts the LTCC technology to realize, thereby makes the structure of duplexer compact more, also is easy to mutually integrated with its RF front-end module.
The present invention is achieved by the following technical solutions, the present invention includes: high-pass filtering part and low-pass filtering part, wherein: the high-pass filtering part is in parallel as common antenna port with the input of low-pass filtering part, the output of high-pass filtering part is as the high frequency output port, and the output of low-pass filtering part is as the low frequency output port.
Described high-pass filtering partly comprises: first series resonator, first capacity cell and second capacity cell, wherein: first capacity cell and second capacity cell are series between common antenna port and the high frequency output port, one end of first series resonator is in parallel with second capacity cell, the other end ground connection of first series resonator.
Described low-pass filtering partly comprises: the parallel resonator and second series resonator, and wherein: the two ends of parallel resonator connect common antenna port and low frequency output port respectively, and an end of second series resonator connects low frequency output port, other end ground connection.
Described first capacity cell and second capacity cell are the parallel plate type interdigital capacitor.
Inductance element in described first series resonator, parallel resonator and second series resonator is spiral inductance.
The horizontal arrangement plane of first series resonator, first capacity cell, second capacity cell, parallel resonator and second series resonator in described high-pass filtering part and the low-pass filtering part parallels with ground plane.
Described first series resonator, first capacity cell and second capacity cell and parallel resonator and second series resonator are arranged parallel to each other, and are interconnected by the metallization via hole.
The present invention carries out work in the following manner: the common antenna port of duplexer, high frequency output port and low frequency output port are connected with antenna and rf processing circuitry respectively, the mixed signal that antenna is accepted inputs in the duplexer through common antenna port, the low-pass filtering part will filter out the HFS that is higher than its cut-off frequency, and in inserting the loss corresponding figures, form transmission zero, to suppress high-frequency signal; Equally, also can filter out the low-frequency component that is lower than its cut-off frequency in the high-pass filtering part, the high-pass filtering part is except forming transmission zero with the inhibition low frequency composition in low-pass filtering part passband, also will in high-pass filtering part passband, form the transmission coefficient maximum point, to improve the transmission performance of high-pass filtering part.
The present invention has compared with prior art introduced transmission zero and transmission maximal point, has realized duplexer performance preferably with less elements; Adopt multilayer LTCC technology simultaneously, make duplexer can be in three dimensions flexible configuration, thereby make structure compact more, reach the purpose that realizes miniaturization; Configuration of the present invention can significantly reduce parasitic capacitance effect in the circuit running, and it is all in institute's configuration capacitor that parasitic capacitance is partly added, and the value that adds the capacitor of parasitic capacitance part still equals original designed value.
Description of drawings
Fig. 1 is principle of the invention figure.
Fig. 2 is a structural representation of the present invention.
Fig. 3 is a low-pass filtering part-structure schematic diagram.
Fig. 4 is the capacity cell schematic diagram of low-pass filtering part parallel branch
Fig. 5 is the inductance element schematic diagram of low-pass filtering part parallel branch
Fig. 6 is the inductance element schematic diagram of low-pass filtering part series branch
Fig. 7 is the capacity cell schematic diagram of low-pass filtering part series branch.
Fig. 8 is a high-pass filtering part-structure schematic diagram.
Fig. 9 is the inductance element schematic diagram of high-pass filtering part series branch
Figure 10 is the capacity cell schematic diagram of high-pass filtering part series branch
Figure 11 is the capacity cell schematic diagram that high-pass filtering part symmetry connects.
Figure 12 is a typical frequencies response schematic diagram;
Wherein: Figure 12 a is low-pass filtering component frequency response schematic diagram; Figure 12 b is high-pass filtering component frequency response schematic diagram.
Figure 13 is a relatively schematic diagram of embodiment transfer curve measured result.
Figure 14 is a relatively schematic diagram of embodiment isolation characteristic curve measured result.
Embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, this example comprises: comprising: low-pass filtering part 9 and high-pass filtering part 10, wherein: high-pass filtering part 10 is in parallel with the input of low-pass filtering part 9 as common antenna port 1, the output of high-pass filtering part 10 is as high frequency output port 2, and the output of low-pass filtering part 9 is as low frequency output port 3;
Described high-pass filtering part 10 comprises: first series resonator 4, first capacity cell 5 and second capacity cell 6, wherein: first capacity cell 5 and second capacity cell 6 are series between common antenna port 1 and the high frequency output port 2, one end of first series resonator 4 is in parallel with second capacity cell 6, the other end ground connection of first series resonator 1;
Described low-pass filtering part 9 comprises: the parallel resonator 7 and second series resonator 8, wherein: the two ends of parallel resonator 7 connect common antenna port 1 and low frequency output port 3 respectively, one end of second series resonator 8 connects the other end ground connection of low frequency output port 3, the second series resonator 8;
Described first capacity cell 5 and second capacity cell 6 are the parallel plate type interdigital capacitor, and the inductance element in described first series resonator 4, second series resonator 7 and the parallel resonator 8 is spiral inductance.
As shown in Figures 2 and 3, the horizontal arrangement plane of described first series resonator 4, first capacity cell 5, second capacity cell 6, parallel resonator 7 and second series resonator 8 parallels with ground plane.
Described first series resonator 4, first capacity cell 5, second capacity cell 6, parallel resonator 7 and second series resonator 8 all adopt the micro low-temperature co-fired ceramic material to make, the relative dielectric constant of this micro low-temperature co-fired ceramic is 5.9, totally seven layers of medium, every layer of dielectric thickness is 0.096mm, the dielectric loss tangent angle is 0.0015, metal material in the lamped element adopts silver, and every layer of metal material thickness is 0.01mm;
The live width of the spiral inductance in described first series resonator 4, second series resonator 7 and the parallel resonator 8 is 0.15mm.
Described first series resonator 4, first capacity cell 5 and second capacity cell 6 are arranged parallel to each other with the parallel resonator 7 and second series resonator 8, and are interconnected by metallization via hole 11, and the diameter of this metallization via hole 11 is 0.185mm.
To shown in Figure 7, the wire length 12 of the low pass output port 3 that described low-pass filtering part 9 is drawn is 0.673mm as Fig. 3, and width is 0.235mm;
The outer of described metallization via hole 11 is provided with square pad 12, and the width of this square pad 13 is 0.235mm.
The inductance element 7b of described parallel resonator 7 adopts five layers of up time pin type spiral inductance, described capacity cell 7a adopts the double face slab structure of 0.56mm*0.6mm, inductance element 8a adopts three layers of inverse time pin type spiral inductance, and capacity cell 8b adopts three layers of interdigital panel capacitance of 1.145mm*1.4mm;
As shown in Figs. 8 to 11, the wire length 14 of the high pass output port 2 that described high-pass filtering part 10 is drawn is 0.466mm, inductance element 4a in first series resonator 4 adopts two-layer up time pin type spiral inductance, electric capacity 4b adopts five layers of interdigital panel capacitance of 1.65mm*1.52mm, and first capacity cell 5 and second capacity cell 6 adopt six layers of interdigital panel capacitance of 1.35mm*0.89mm.
As shown in figure 12, for the low-pass filtering part and the high-pass filtering typical frequencies response diagram partly of lump prototype in the present embodiment, by seeing the improvement of transmission zero and transmission pole among the figure to transmission performance.
As shown in figure 13, the result who compares for the insertion loss of present embodiment, therefrom as can be seen, it is fairly good that two results coincide.
As shown in figure 14, the result who compares for the isolation characteristic of present embodiment, therefrom as can be seen, it is fairly good that two results also coincide.
According to test result as can be seen, the duplexer of this example has not only been accomplished miniaturization, have transmission characteristic and isolation characteristic preferably, and it is integrated into easily in other radio-frequency (RF) front-end circuit.This diplexer structure is fairly simple in addition, thus processing than being easier to, cost is lower.
Claims (10)
1, a kind of micro low-temperature co-fired ceramic duplexer that is used for GSM/DCS, comprise: high-pass filtering part and low-pass filtering part, wherein: the high-pass filtering part is in parallel as common antenna port with the input of low-pass filtering part, the output of high-pass filtering part is as the high frequency output port, the output of low-pass filtering part is characterized in that as the low frequency output port:
Described high-pass filtering partly comprises: first series resonator, first capacity cell and second capacity cell, wherein: first capacity cell and second capacity cell are series between common antenna port and the high frequency output port, one end of first series resonator is in parallel with second capacity cell, the other end ground connection of first series resonator;
Described low-pass filtering partly comprises: the parallel resonator and second series resonator, and wherein: the two ends of parallel resonator connect common antenna port and low frequency output port respectively, and an end of second series resonator connects low frequency output port, other end ground connection;
Described first capacity cell and second capacity cell are the parallel plate type interdigital capacitor, and the inductance element in described first series resonator, parallel resonator and second series resonator is spiral inductance.
2, the micro low-temperature co-fired ceramic duplexer that is used for GSM/DCS according to claim 1, it is characterized in that, described first series resonator, first capacity cell and second capacity cell and parallel resonator and second series resonator are arranged parallel to each other, and are interconnected by the metallization via hole.
3, the micro low-temperature co-fired ceramic duplexer that is used for GSM/DCS according to claim 1, it is characterized in that the horizontal arrangement plane of first series resonator, first capacity cell, second capacity cell, parallel resonator and second series resonator in described high-pass filtering part and the low-pass filtering part parallels with ground plane.
4, according to claim 1 or the 2 or 3 described micro low-temperature co-fired ceramic duplexers that are used for GSM/DCS, it is characterized in that, described first series resonator, first capacity cell, second capacity cell, parallel resonator and second series resonator adopt the micro low-temperature co-fired ceramic material to make, this micro low-temperature co-fired ceramic is totally seven layers of medium, every layer of dielectric thickness is 0.096mm, and the dielectric loss tangent angle is 0.0015.
5, the micro low-temperature co-fired ceramic duplexer that is used for GSM/DCS according to claim 2 is characterized in that, the diameter of described metallization via hole is 0.185mm.
6, according to claim 2 or the 5 described micro low-temperature co-fired ceramic duplexers that are used for GSM/DCS, it is characterized in that the outer of described metallization via hole is provided with square pad, the width of this square pad is 0.235mm.
According to claim 1 or the 2 or 3 described micro low-temperature co-fired ceramic duplexers that are used for GSM/DCS, it is characterized in that 7, the inductance element in the described parallel resonator is five layers of up time pin type spiral inductance, capacity cell is the double face slab structure.
8, according to claim 1 or the 2 or 3 described micro low-temperature co-fired ceramic duplexers that are used for GSM/DCS, it is characterized in that, inductance element in described second series resonator is three layers of inverse time pin type spiral inductance, and the capacity cell in second series resonator is three layers of interdigital panel capacitance.
9, according to claim 1 or the 2 or 3 described micro low-temperature co-fired ceramic duplexers that are used for GSM/DCS, it is characterized in that, inductance element in described first series resonator is two-layer up time pin type spiral inductance, and the capacity cell in first series resonator is five layers of interdigital panel capacitance.
According to claim 1 or the 2 or 3 described micro low-temperature co-fired ceramic duplexers that are used for GSM/DCS, it is characterized in that 10, described first capacity cell and second capacity cell are six layers of interdigital panel capacitance.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102035493A (en) * | 2010-11-24 | 2011-04-27 | 南京理工大学 | Band-pass/band-stop type miniature low temperature co-fired ceramic duplexer |
| CN103023452A (en) * | 2011-09-21 | 2013-04-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Filter circuit and dual-frequency plasma processing device including same |
| CN103682607A (en) * | 2013-11-18 | 2014-03-26 | 航天恒星科技有限公司 | High-frequency low-complexity LTCC (Low Temperature Co-Fired Ceramic) spiral antenna |
| CN104662798A (en) * | 2012-09-25 | 2015-05-27 | 株式会社村田制作所 | Acoustic wave filter device and duplexer |
| CN105515546A (en) * | 2016-02-01 | 2016-04-20 | 谷林超 | Novel high-low pass duplexer circuit |
| CN110994087A (en) * | 2019-11-25 | 2020-04-10 | 中国计量大学上虞高等研究院有限公司 | High-low-pass parallel LTCC band elimination filter |
| CN112272014A (en) * | 2020-11-02 | 2021-01-26 | 电子科技大学 | Mixed medium frequency divider |
| CN114050384A (en) * | 2021-06-28 | 2022-02-15 | 苏州希拉米科电子科技有限公司 | Low-temperature co-fired ceramic duplexer |
-
2009
- 2009-07-16 CN CN200910054906A patent/CN101662266A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102035493A (en) * | 2010-11-24 | 2011-04-27 | 南京理工大学 | Band-pass/band-stop type miniature low temperature co-fired ceramic duplexer |
| CN103023452A (en) * | 2011-09-21 | 2013-04-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Filter circuit and dual-frequency plasma processing device including same |
| CN103023452B (en) * | 2011-09-21 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Filter circuit and the dual frequency plasma processing unit with it |
| CN104662798A (en) * | 2012-09-25 | 2015-05-27 | 株式会社村田制作所 | Acoustic wave filter device and duplexer |
| CN104662798B (en) * | 2012-09-25 | 2017-03-08 | 株式会社村田制作所 | Acoustic wave filter device and duplexer |
| CN103682607A (en) * | 2013-11-18 | 2014-03-26 | 航天恒星科技有限公司 | High-frequency low-complexity LTCC (Low Temperature Co-Fired Ceramic) spiral antenna |
| CN103682607B (en) * | 2013-11-18 | 2016-03-02 | 航天恒星科技有限公司 | A kind of LTCC helical antenna of high frequency low complex degree |
| CN105515546A (en) * | 2016-02-01 | 2016-04-20 | 谷林超 | Novel high-low pass duplexer circuit |
| CN110994087A (en) * | 2019-11-25 | 2020-04-10 | 中国计量大学上虞高等研究院有限公司 | High-low-pass parallel LTCC band elimination filter |
| CN112272014A (en) * | 2020-11-02 | 2021-01-26 | 电子科技大学 | Mixed medium frequency divider |
| CN112272014B (en) * | 2020-11-02 | 2023-04-25 | 电子科技大学 | Mixed medium frequency divider |
| CN114050384A (en) * | 2021-06-28 | 2022-02-15 | 苏州希拉米科电子科技有限公司 | Low-temperature co-fired ceramic duplexer |
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