CN101662208B - Charge pump circuit capable of realizing positive and negative high voltages - Google Patents
Charge pump circuit capable of realizing positive and negative high voltages Download PDFInfo
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Abstract
The invention discloses a charge pump circuit capable of realizing positive and negative high voltages, which is an asymmetric cross-coupled unilaterally cascaded charge pump circuit. The charge pump circuit can be configured to generate both a positive high voltage (VHP) and a negative high voltage (VHN) and belongs to the field of charge pump circuit design. The charge pump circuit can greatly reduce design cost and improve circuit efficiency and driving capacity. The charge pump circuit formed by multi-stage cross-coupled charge pumps which are connected in series and unilaterally cascaded can output the positive and negative high voltages; and a field effect metal oxide transistor (mos) only needs to bear double power voltages.
Description
Technical field:
A kind of low cost, high efficiency, the charge pump circuit that the generating positive and negative voltage timesharing produces, it belongs to the charge pump circuit design field, the applicable and various occasions that need to promote supply voltage.
Background technology:
Traditional method is to use two independent charge pump circuits: a positive high voltage charge pump is for generation of positive high voltage (VHP), and another negative high voltage charge pump still can occupy very large chip area so undoubtedly for generation of negative high voltage (VHN); Coupling capacitance accounts for the chip area maximum, also has the positive and negative charge of proposition pump to share a cover coupling capacitance, and the mos switch of charge pump is also with two covers, and actual or two charge pumps are just shared a cover electric capacity; This mechanism will be switched a cover electric capacity timesharing to positive charge pump and negative charge pump undoubtedly, increased like this complexity of circuit design, an and mos pipe of the every introducing of single-stage charge pump switch, the RC time constant of this grade charge pump charging or discharge adds at least and is twice, and this causes the maximum operating frequency drop by half of the charge pump circuit determined; Perhaps also the switching tube of handlebar switch-capacitor do much larger than the mos that discharges and recharges pipe, large parasitic capacitance has also been introduced in the increase of mos pipe size, has also limited the high workload clock frequency of charge pump, and the in-fighting that has increased charge pump, reduce charge pump efficient, limited the maximum drive ability.
Because chip area restriction, charge pump integrated in the chip is little because of the electric capacity of Embedded, consider from driving force, the Embedded charge pump adopts di ckson structure (list of references Janusz A.Starzyk mostly, Senior Member, IEEE, Ying-Wei Jan, and Fengjing Qiu, " A DC-DC Charge Pump Design Based on Voltage Doublers, " IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS-I:FUNDAMENTAL THEORY AND APPLICATIONS, VOL.48, NO.3, MARCH2001).If obtain voltage greater than 2 times of power supplys, the switching tube of that charge pump must be used high-voltage switch gear, and identical breadth length ratio high-voltage tube area is much larger, and large area parasitic capacitance is larger; And the electric capacity of charge pump also must be high pressure resistant, also just can not adopt the higher low pressure mos pipe of unit-area capacitance to do electric capacity, under the identical driving force, and this undoubtedly traditional way, chip occupying area is large, and conversion efficiency is low.
Cross-couplings charge pump mentioned in this article is used for 2 times of supply voltages mostly.If obtain more high voltage with the cross-couplings charge pump construction, just need the cascade of multi-stage cross coupling electric charge pump serial type.Traditional cross-couplings charge pump multi-stage cascade, such as Fig. 2, the 2nd grade and 3rd level level are associated with electric leakage, the front half period of clock and later half cycle, the corresponding second level has individual switching tube effectively not open and close all the time, the high pressure that causes rear one-level to produce drains back to the phenomenon of previous stage, state as shown in Figure 2, such as clk=vdd, during clkb=0,3 times vdd voltage is opened n4nmos, this moment, 2 times of voltages of prime charged to C2_1, but because the voltage of closing of n3nmos only is 2 times of vdd, n3nmos is closed, cause that 3 times of vdd voltages drain back on the c1_2 electric capacity on the C2_2 electric capacity.
Traditional cross-couplings charge pump has 2 inputs, 2 outputs, 2 equal-sized electric capacity, 2 measure-alike mos switching tube (list of references Pierre Favrat, IEEE, Philippe Deval, and Michel J.Declercq, " A High-Efficiency CMOS Voltage Doubler ", IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL.33, NO.3, MARCH1998), 2 inputs of traditional cross-couplings charge pump in a clock cycle respectively to 2 capacitor chargings.
The present invention discloses a kind of positive and negative high-tension charge pump circuit, by the monolateral cascade of asymmetric crossed coupling electric charge pump stage serial, only produces positive high voltage and negative high voltage with a charge pump circuit.
Summary of the invention
The present invention is the charge pump circuit of a generating positive and negative voltage, and the monolateral cascade of every one-level asymmetric crossed coupling electric charge pump serial, main feature has 1) output positive voltage and negative voltage, 2 can be set) charge pump mos switching tube only bears 2 times of supply voltages.
The invention accompanying drawing
The cross-couplings charge pump circuit figure that Fig. 1 is traditional
The schematic diagram of the cross-couplings charge pump cascade that Fig. 2 is traditional
Fig. 3 pmos manages generalized section
Fig. 4 nmos manages generalized section
The monolateral cascade schematic diagram of Fig. 5 cross-couplings charge pump
Fig. 6 asymmetric crossed coupling electric charge pump stage
Fig. 7 cross-couplings sampling hold circuit
Fig. 8 positive-negative voltage conversion circuit
Fig. 9 DNW biasing circuit
The invention implementation
The present invention adopts multistage friendship asymmetric crossed coupling electric charge pump stage connection, produces positive high voltage and negative high voltage times over supply voltage.It at first is the profile of pmos400 switching tube such as Fig. 3.401 zones are P substrates of chip, meet GND; 402 zones are DNW (deep Nwel1); 403 zones are N traps of pmos, and N trap and DNW connect, 1) connect the N trap voltage that produces into this pmos, and this N trap voltage is operated under any state pmos400, the poor supply voltage that is no more than 2 times of these pmos four terminal voltages.2) N trap and DNW connect, because the voltage regime of the pmos of every one-level charge pump work is different, just require trap (zone 403) voltage of each grade pmos all different, so every one-level charge pump all must have the DNW (zone 402) of oneself.3) the ambipolar PNP441 of pmos400 parasitism, in the whole work period, as long as the N trap in a bit of times 403 zone is arranged less than the P+ active area, then PNP441 work, cause leakage current, flow to P substrate 401, so in the whole course of work, zone 402,403 requires the at the corresponding levels the highest voltage of biasing.4) when charge pump produced negative pressure, pmos four terminal voltages all were negative voltage, and namely P trap (zone 403) and DNW (zone 402) are negative voltages, but P substrate (zone 401) is GND, the PN junction positively biased conducting that P substrate and DNW, N trap form.So can not under this technique, produce negative voltage with pmos cross-couplings charge pump, but the input stage ceiling voltage of negative voltage is ground GND, pmos can do the negative voltage input stage, also doubles as the output stage (being the pmos asymmetric crossed coupling electric charge pump of the charge pump output stage of Fig. 5) of positive voltage.
The present invention adopts the cascade of asymmetric crossed coupling electric charge pump stage.Fig. 4 is the profile of nmos300 switching tube, and 301 zones are P substrates of chip, meet GND; 302 zones are DNW (deep Nwell), connect the voltage that the DNW biasing circuit produces, and prevent P substrate 301 zones and DNW302 zone, the PN junction forward conduction of formation, 321,322,323 among PN junction such as Fig. 4; 303 zones are P traps of nmos, and the P trap connects a bias voltage, prevent the PN junction forward conductions of P trap 303 zone and the formation of DNW302 zone, among this PN junction such as Fig. 4 311,312; Among Fig. 4, the PNP bipolar transistor of the 341st, nmos300 parasitism, if DNW zone 302 voltages are lower than more than the P well area 3030.7v, then PNP341 work causes electric leakage, electric leakage is to P substrate 301.So must setovering, the DNW of nmos cross-couplings charge pump helps the chip ceiling voltage.Nmos asymmetric crossed coupling electric charge pump stage can be realized the generating positive and negative voltage transmission.
The present invention adopts the monolateral cascade of asymmetric crossed coupling electric charge pump stage, and pmos is adopted in the input of ceiling voltage (negative voltage) and output (positive voltage), is the overall circuit figure of the cross-couplings charge pump of attainable monolateral cascade such as Fig. 5.So-called monolateral cascade refers to, the asymmetric crossed coupling electric charge pump stage of charge pump, a pair of electric capacity is asymmetric, electric capacity is large on one side, be responsible for the carrying electric charge to its load, namely give next stage or to the filtering storage capacitor of output voltage, such as the CC_i among Fig. 5, " i " is the progression at this electric capacity place, only has this electric capacity to move electric charge to next stage; The electric capacity on one side is little in addition, only be responsible for opening or closing the cross-linked nmos pipe that links to each other with it, such as the Cs_i among Fig. 5, if A is the input of monolateral cascade cross-couplings charge pump input stage, when charge pump was operated in positive voltage, alternative selector 1 selected VDD to the input A of charge pump input stage, Clk1_i, Clk2_i, Clk1b`_i, Clk2b`_i is the clock input of charge pump, and signal amplitude is VDD.I level asymmetric crossed coupling electric charge pump such as Fig. 5 charge pump, mainly by capacitor C C_i, Cs_i, nmos switching tube Sn1_i, Sn2_i forms, and capacitor C s_i is a little electric capacity, the voltage that only need to keep enough promotes the grid of continuous nmos Sn2_i, the capacitance of Cs_i is got the grid oxygen electric capacity of 10 times～30 times Sn2_i, and nmos Sn1_i drives capacitor C s_i, and the RC time constant of the conducting resistance of nmosSn1_i and Cs_i+1 is less than discharging and recharging 1/3 of the time; Capacitor C C_i-1 is the large electric capacity of moving electric charge, driving force and operating frequency according to charge pump determine, Sn2_i drives the large capacitor C C_i that electric charge is moved, and the conducting resistance of nmos switch S n2_i and the RC time constant of capacitor C C_i are less than 1/6 of the charge pump work period; Such as Fig. 5, the 2nd grade of charge pump, capacitor C s_2, a termination clock Clk1b`, another termination w2, w2 connects the source electrode of Sn1_2 and the grid of Sn2_2 simultaneously; Capacitor C C_2, a termination clock Clk2b`, another termination charge pump first order output Vout2, Vout2 connects the grid of nmosSn1_2 simultaneously, and the drain terminal of nmos Sn1_2 and Sn2_2 connects exports Vout2 together, and Vout2 exports to the input of subordinate's charge pump.
The operation principle of single-stage asymmetric crossed coupling electric charge pump stage is, asymmetric crossed coupling electric charge pump stage only has an input Vouti-1, an output end vo uti, its basic principle is, in the half period of a clock cycle, give first little capacitor charging, give again large capacitor charging, detailed process is, the very fraction time mos switching tube Sn1_i conducting of the wherein half period of a clock cycle, input Vouti-1 gives little capacitor C s_i charging, and then mos switching tube Sn1_i closes, then mos switching tube Sn2_i opens, input Vouti-1 voltage is given large capacitor C C_i charging by Sn2_i, after input is complete to output end vo uti charging, and the in addition half period of clock cycle, mos pipe Sn1_i conducting, mos switching tube Sn2_i turn-offs.
The cascade of asymmetric crossed coupling electric charge pump stage, the nmos pipe is opened, by clock jack-up by the electric capacity that links to each other with this nmos grid, the grid voltage of this nmos exceeds one times supply voltage than its source-drain voltage, nmos transmission high level does not just have the situation of the loss of voltage like this, but afterbody output, the grid voltage that can not produce this nmos exceeds one times supply voltage than its source-drain voltage, can not use what as front so afterbody is exported.Such as Fig. 5, the charge pump output stage is charge pump positive voltage output stage, adopts a pair of pmos switching tube; Also can open the nmos switching tube with the bootstrapping charge pump, perhaps do one-level nmos asymmetric crossed coupling electric charge pump stage more, produce the nmos switch that voltage that a specific output voltage doubles is opened output stage.When the charge pump of Fig. 5 produces negative pressure, alternative selector 2, select GND to Bias, the output Bias that is the charge pump output stage connects GND, n level asymmetric crossed coupling electric charge pump is made the input stage of negative voltage, and-1 times power supply power supply opening of this grade pmos does not exist output voltage that the problem of a loss of voltage is arranged yet, and input stage nmos asymmetric crossed coupling electric charge pump is made the output stage of negative voltage, and nmos passes low level does not have the output voltage loss yet.
Such as the output stage pmos asymmetric crossed coupling electric charge pump of Fig. 5 charge pump, the trap potential of the general pmos maximum potential that this pmos links to each other of setovering prevents electric leakage and latchup.Input Voutn such as the pmos Sp1_n+1 of charge pump output stage among Fig. 5, suppose that Voutn changes from 1 times of vdd to 2 times of vdd, 2 times of vdd of output end vo utn output of that pmos Sn1_n+1, but along with the electric charge between the electric capacity is shared, these voltages are not the integral multiple voltage of desirable vdd, if the n trap potential voltage ratio source region p+ voltage of pmos Sp1_n is low, then not only the pn of p+ source region and n trap ties forward conduction, such as diode among Fig. 3 421,422,423, establishing the electric current that stream flows through diode 421 is I
b, and also work such as the ambipolar pnp441 among Fig. 3, will have current beta I
bFlow to the P substrate, current leakage is serious, all is ceiling voltage so require the n trap bias voltage of pmos in any operating time of charge pump.
The sampling of trap biasing circuit keeps a voltage, make mos switching tube four ends (source electrode, grid, drain electrode, the substrate) voltage difference of asymmetric crossed coupling electric charge pump stage be no more than 2 times supply power voltage, and the high pressure of this mos pipe voltage difference of bearing and charge pump output it doesn't matter; The n trap biasing circuit of pmos also is a cross-couplings charge pump stage, this cross-couplings charge pump stage is done biasing circuit, structure such as Fig. 7 trap offset generating circuit, but the cross-couplings sampling structure only has an electric capacity to be made as Csp, another large electric capacity and this grade cross-couplings charge pump share CC_n, 2 one of them mos switching tubes of mos switching tube are made as Ssp2, another mos switching tube is made as Ssp1, large capacitor C C_n one end Voutn connects the source electrode of mos pipe Ssp2, Voutn connects the grid utmost point of mos pipe Ssp1, the end of Csp connects the source electrode of Ssp1, the grid that connects simultaneously Ssp2, the drain electrode of mos pipe Ssp2 and Ssp1 connects and is together output nsub, output connects a little electric capacity, the other end ground connection of little electric capacity, and this little electric capacity is preserved the voltage that samples, the n trap of these all pmos pipes of this level of voltage bias that samples, this cross-couplings sample circuit be the p trap biasing of applicable nmos pipe too.
The p trap biasing circuit of nmos switching tube, such as 1 among Fig. 6, p trap biasing circuit, it also is a sampling hold circuit, the p trap of this sampling hold circuit biasing nmos pipe, p trap offset generating circuit has a nmos switching tube Ssi, the grid of nmos pipe Ssi connects the grid of this grade charge pump mos pipe Sn2_i, the source electrode of nmos pipe Ssi connects the source electrode Vouti of mos pipe Sn2_i, the drain electrode of nmos pipe Ssi connects and keeps electric capacity, the other end ground connection that keeps electric capacity, the sampling hold circuit of this p trap biasing also can substitute with the cross-couplings sample circuit of pmos pipe.
Such as 3 discharge circuits among Fig. 6, every grade of asymmetric crossed coupling electric charge delivery side of pump Vouti connects a pair of high-voltage tube that bears VHP voltage, the source electrode of high-voltage tube mos1 connects power vd D, drain electrode connects output end vo uti, grid connects control wave, the source electrode of high-voltage tube mos2 connects GND, and drain electrode connects output end vo uti, and grid connects another control wave.
The generating positive and negative voltage conversion comprises two aspects, 1) output stage voltage, positive electricity is pressed onto negative voltage; 2) inner all electric capacity of charge pump are put into ground from positive voltage, perhaps are charged to supply voltage from negative voltage, the initial condition of its charge pump work of Rapid Establishment; 2 select the output 3 of 1 selector 1 to connect the input A of charge pump input stages as shown in Figure 8, selector 1 input 1 connects power supply VDD, selector 1 input 2 connects the storage capacitor CL1 of VHN, 2 select 1 selector 2 to connect the output Bias of charge pump output stage, the input 1 of selector 2 connects the ground of power supply, and the input 2 of selector 2 connects the storage capacitor CL2 of positive high voltage VHP.
Such as 2 circuit among Fig. 6, be auxiliary starting circuit, nmos connects into the diode form, sets up the initial stage at charge pump output voltage, the auxiliary transmission electric charge.3 discharge circuits among Fig. 7 when initially powering on the charge pump voltage switching, are set up initial start up conditions to charge pump, and discharge circuit is main start-up circuit.Start-up circuit and its switch S n1_i in parallel, Sn2_i, Sn1_i is different with the capacitance size that Sn2_i drives, Sn1_i, the breadth length ratio of Sn2_i is not identical yet, do not require identical with the auxiliary starting circuit breadth length ratio of Sn1_i and Sn2_i parallel connection yet, 2 mos switching tubes, connect into the diode form, be parallel to 2 mos switching tubes of asymmetric crossed coupling electric charge pump, be the source electrode Vouti that one of them mos switching tube source electrode connects this grade cross-couplings charge pump mos pipe Sn2_i, the grid of this mos switching tube and the mos pipe Sn2_i drain electrode Vouti-1 that is connected and connects the cross-couplings charge pump, another mos switching tube source electrode Vouti connects the mos pipe Sn1_i source electrode Vouti of cross-couplings charge pump, and the grid of this mos switching tube connects the drain electrode Vouti-1 of mos pipe Sn_i with being connected.
In Fig. 9, charge pump circuit 700, the output end vo uti of every grade of charge pump, connect respectively every grade diode Di, letter i represents charge pump progression, and the other end of Di connects together, is connected to bias, this bias bias voltage is to DNW (Deep N Well) biasing usefulness, and the Bias bias voltage prevents the diode positively biased that DNW (Fig. 5 zone 302) and P trap (Fig. 5 zone 303) form.The DNW biasing circuit, 1) charge pump at positive voltage or negative voltage, is changed bias voltage with work at present automatically; 2) charge pump is set up the initial stage at output voltage, and charge pump when normal operation, all the diode of reliable anti-partially DNW (Fig. 5 zone 302) and P trap (Fig. 5 zone 303) formation.When charge pump is operated in positive voltage, the DNW ceiling voltage of setovering; When charge pump is operated in negative voltage, the DNW GND that setovers.
Claims (15)
1. a charge pump circuit of realizing positive or negative high voltage is characterized in that: by the monolateral cascade of a plurality of asymmetric crossed coupling electric charge pump stage serials, consist of a charge pump circuit, produce positive high voltage VHP and negative high voltage VHN;
Described asymmetric crossed coupling electric charge pump stage is comprised of 1 input Vouti-1,1 output end vo uti, 2 electric capacity and 2 mos switching tubes, 2 capacitance sizes are asymmetric, one of them electric capacity is made as CC_i, all i represent progression, another electric capacity is made as CS_i, and capacitor C C_i is than large 1～2 order of magnitude of CS_i; 2 mos switching tube cross-couplings connect, and one of them mos switching tube is made as Sn2_i, and another mos switching tube is made as Sn1_i; Output end vo uti connects the end of capacitor C C_i, and output end vo uti connects the source electrode of mos switching tube Sn2_i, and output end vo uti also connects the grid of mos switching tube Sn1_i;
The end of capacitor C S_i connects the source electrode of mos switching tube Sn1_i, the grid that connects simultaneously mos switching tube Sn2_i, the drain electrode of two mos switching tubes connects makes input Vouti-1 at the corresponding levels, another free end of 2 electric capacity connects respectively the non-overlapping clock of a pair of complementation, the amplitude of oscillation of non-overlapping clock is to power supply ground input GND from power supply input VDD, input Vouti-1 connects the output of previous asymmetric crossed coupling electric charge pump stage, output end vo uti connects the input of a rear asymmetric crossed coupling electric charge pump stage, consists of the monolateral cascade of asymmetric crossed coupling electric charge pump stage serial.
2. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 1, it is characterized in that: described asymmetric crossed coupling electric charge pump stage, only has an input Vouti-1, only has an output end vo uti, the very fraction time mos switching tube Sn1_i conducting of the wherein half period of a clock cycle, input Vouti-1 voltage charges to capacitor C S_i by Sn1_i, then mos switching tube Sn1_i turn-offs, then mos switching tube Sn2_i conducting, input Vouti-1 voltage charges to capacitor C C_i by Sn2_i, then the in addition half period of clock cycle, mos switching tube Sn1_i conducting, mos switching tube Sn2_i turn-offs.
3. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 1, it is characterized in that: charge pump circuit is inputted VDD by power supply, power supply ground input GND, the clock input, the voltage amplitude of clock is inputted VDD with power supply, the storage capacitor CL2 of positive high voltage VHP, the storage capacitor CL1 of negative high voltage VHN, 2 select 1 selector 1 and 2 to select 1 selector 2, and the monolateral cascade of asymmetric crossed coupling electric charge pump stage forms.
4. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 3, it is characterized in that: 2 select the input 1 of 1 selector 1 to connect power supply input VDD, 2 select the input 2 of 1 selector 1 to connect the storage capacitor CL1 of negative high voltage VHN, and 2 select the output 3 of 1 selector 1 to connect the input A of the input stage of charge pump circuits;
2 select the input 1 of 1 selector 2 to connect power supply ground input GND, and the input 2 of selector 2 connects the storage capacitor CL2 of positive high voltage VHP, and the output 3 of selector 2 connects bias, and bias is the output of the output stage of charge pump circuit.
5. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 3, it is characterized in that: the monolateral cascade of described asymmetric crossed coupling electric charge pump stage, its charge pump circuit input stage and intergrade all adopt nmos asymmetric crossed coupling level, the any multistage number of intergrade serially concatenated, output stage pmos asymmetric crossed coupling level, the output stage of charge pump circuit and adjacent intergrade share same large capacitor C C_n.
6. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 5 is characterized in that: described nmos asymmetric crossed coupling level is comprised of following electronic circuit:
Nmos asymmetric crossed coupling electric charge pump stage;
Nmos switching tube p trap bias-voltage generating circuit;
Discharge circuit;
Start-up circuit;
Deep layer n trap biasing circuit.
7. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 6, it is characterized in that: two mos switching tube Sn2_i of described nmos asymmetric crossed coupling electric charge pump stage and Sn1_i are the nmos pipes, 2 electric capacity are CC_i and CS_i, output end vo uti connects the end of capacitor C C_i, output end vo uti connects the source electrode of mos switching tube Sn2_i, and output end vo uti also connects the grid of mos switching tube Sn1_i; The end of capacitor C S_i connects the source electrode of mos switching tube Sn1_i, the grid that connects simultaneously mos switching tube Sn2_i, the drain electrode of two mos switching tubes connects makes input Vouti-1 at the corresponding levels, and the other end of two electric capacity connects respectively the complementary non-overlapping clock input that signal amplitude is VDD.
8. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 6, it is characterized in that: described nmos switching tube p trap bias-voltage generating circuit, comprise that a nmos switching tube is called Ssi, the grid of nmos switching tube Ssi connects the grid of the mos switching tube Sn2_i of this grade asymmetric crossed coupling electric charge pump stage, the source electrode of nmos switching tube Ssi connects the source electrode of mos switching tube Sn2_i, the drain electrode of nmos switching tube Ssi connects one and keeps capacitor C psub, the other end ground connection of capacitor C psub.
9. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 6, it is characterized in that: in the described discharge circuit, the source electrode of high-voltage tube mos1 connects power supply input VDD, drain electrode connects the output end vo uti of asymmetric crossed coupling electric charge pump stage at the corresponding levels, grid connects control wave, the source electrode of high-voltage tube mos2 connects power supply ground input GND, and drain electrode connects the output end vo uti of asymmetric crossed coupling electric charge pump stage at the corresponding levels, and grid connects another control wave.
10. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 6, it is characterized in that: described start-up circuit connects into the diode form by 2 mos switching tubes, one of them mos switching tube source electrode connects the source electrode of the mos switching tube Sn2_i of this grade asymmetric crossed coupling electric charge pump stage, and the grid of this mos switching tube connects the drain electrode of mos switching tube Sn2_i with being connected; Another mos switching tube source electrode connects the source electrode of another mos switching tube Sn1_i of this grade asymmetric crossed coupling electric charge pump stage, and the grid of this mos switching tube connects the drain electrode of mos switching tube Sn1_i with being connected.
11. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 6, it is characterized in that: in the described deep layer n trap biasing circuit, the output end vo uti of every grade of charge pump stage, the positive pole that connects respectively the diode of this nmos asymmetric crossed coupling level, all diode cathodes connect, and be connected to the output output Bias of the output stage of charge pump circuit, Bias connects deep layer n trap, and Bias does the bias voltage of the deep layer n trap of nmos switching tube.
12. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 5 is characterized in that: described pmos asymmetric crossed coupling level is comprised of following electronic circuit:
Pmos asymmetric crossed coupling electric charge pump stage;
Discharge circuit;
Pmos switching tube n trap and deep layer n trap bias-voltage generating circuit.
13. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 12, it is characterized in that: described pmos asymmetric crossed coupling electric charge pump stage two mos switching tubes Sp2_n+1 and Sp1_n+1 are the pmos pipes, 2 electric capacity are CC_n and CS_n+1, the output end vo utn of prime nmos asymmetric crossed coupling electric charge pump stage connects the end of capacitor C C_n, Voutn connects the source electrode of mos switching tube Sp2_n+1, and Voutn also connects the grid of mos switching tube Sp1_n+1; The end of capacitor C S_n+1 connects the source electrode of mos switching tube Sp1_n+1, connects simultaneously the grid of mos switching tube Sp2_n+1, and the drain electrode of two mos switching tube Sp2_n+1 and Sp1_n+1 connects makes charge pump stage output Bias at the corresponding levels.
14. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 12, it is characterized in that: in the described discharge circuit, the source electrode of high-voltage tube mos1 connects power supply input VDD, drain electrode connects the output end vo uti of asymmetric crossed coupling electric charge pump stage at the corresponding levels, grid connects control wave, the source electrode of high-voltage tube mos2 connects power supply ground input GND, and drain electrode connects the output end vo uti of asymmetric crossed coupling electric charge pump stage at the corresponding levels, and grid connects another control wave.
15. a kind of charge pump circuit of realizing positive or negative high voltage as claimed in claim 12, it is characterized in that: described pmos switching tube n trap and deep layer n trap bias-voltage generating circuit, by a capacitor C sp, a large capacitor C C_n, another capacitor C sub, and two mos switching tube Ssp1 and Ssp2 form; Large capacitor C C_n and pmos asymmetric crossed coupling electric charge pump stage share, the end Voutn of large capacitor C C_n connects the source electrode of mos switching tube Ssp2, the grid that connects simultaneously mos switching tube Ssp1, the end of Csp connects the source electrode of mos switching tube Ssp1, the grid that connects simultaneously mos switching tube Ssp2, the other end connects sampling pulse signal; The drain electrode of mos switching tube Ssp2 and mos switching tube Ssp1 connects is output nsub, and output connects a little capacitor C nsub, the other end ground connection of little capacitor C nsub, setover n trap and the deep layer n trap of pmos switching tube of this grade charge pump stage of output nsub.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810142157 CN101662208B (en) | 2008-08-26 | 2008-08-26 | Charge pump circuit capable of realizing positive and negative high voltages |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 200810142157 CN101662208B (en) | 2008-08-26 | 2008-08-26 | Charge pump circuit capable of realizing positive and negative high voltages |
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| CN101662208A CN101662208A (en) | 2010-03-03 |
| CN101662208B true CN101662208B (en) | 2013-10-30 |
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| CN102545589B (en) * | 2010-12-27 | 2015-09-16 | 上海天马微电子有限公司 | DC voltage converting circuit |
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| GB2505371B (en) | 2011-05-05 | 2018-02-28 | Arctic Sand Technologies Inc | DC-DC converter with modular stages |
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| CN102710122B (en) * | 2012-06-05 | 2014-04-23 | 北京大学 | Positive high-voltage charge pump |
| US9379103B2 (en) * | 2012-10-17 | 2016-06-28 | Semtech Corporation | Semiconductor device and method of preventing latch-up in a charge pump circuit |
| US8619445B1 (en) | 2013-03-15 | 2013-12-31 | Arctic Sand Technologies, Inc. | Protection of switched capacitor power converter |
| CN105743328B (en) * | 2016-04-28 | 2019-02-01 | 广东合微集成电路技术有限公司 | A kind of transistor, charge pump components and charge pump |
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| CN106712497B (en) * | 2016-12-30 | 2019-10-11 | 中国科学院上海高等研究院 | A kind of cross-coupling charge pump |
| US10333397B2 (en) * | 2017-07-18 | 2019-06-25 | Stmicroelectronics International N.V. | Multi-stage charge pump circuit operating to simultaneously generate both a positive voltage and a negative voltage |
| CN107453602B (en) * | 2017-08-22 | 2023-09-22 | 合肥博雅半导体有限公司 | Charge pump and memory device |
| CN107911019B (en) * | 2017-12-12 | 2020-04-14 | 中国科学院微电子研究所 | Cross-coupled charge pump |
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| NL2023359B1 (en) * | 2019-06-21 | 2021-02-01 | Nowi Energy B V | DC-DC converter |
| CN110677036A (en) * | 2019-09-17 | 2020-01-10 | 长江存储科技有限责任公司 | Charge pump circuit and forming method thereof |
| CN111049506A (en) * | 2019-12-11 | 2020-04-21 | 成都铭科思微电子技术有限责任公司 | Deep N-well voltage dynamic control circuit |
| CN111525791B (en) * | 2020-04-15 | 2022-04-15 | 东南大学 | Low-voltage high-conversion-efficiency charge pump circuit |
| CN112054670B (en) * | 2020-08-07 | 2023-10-17 | 苏州纳芯微电子股份有限公司 | Microphone and charge pump circuit thereof |
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