CN101658076A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN101658076A CN101658076A CN200880009956A CN200880009956A CN101658076A CN 101658076 A CN101658076 A CN 101658076A CN 200880009956 A CN200880009956 A CN 200880009956A CN 200880009956 A CN200880009956 A CN 200880009956A CN 101658076 A CN101658076 A CN 101658076A
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- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 238000009832 plasma treatment Methods 0.000 claims description 16
- 241000278713 Theora Species 0.000 claims description 11
- 238000004381 surface treatment Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
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- 230000003467 diminishing effect Effects 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000000803 paradoxical effect Effects 0.000 description 12
- 239000007921 spray Substances 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
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- 238000010891 electric arc Methods 0.000 description 8
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- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
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Abstract
The invention provides a plasma processing apparatus which eliminates abnormal discharge onto an inner surface of an ejection port on a ground electrode of a plasma processing apparatus. A dielectricmember (60) is arranged on a discharge surface (42), which is of a ground electrode (40) of a plasma processing apparatus and facing an electric field applying electrode (30). On the dielectric member(60), an ejection guide hole (62) continuous to a discharge space (1p) between the electrodes is formed, and on the ground electrode (40), an ejection port (41) continuous to the ejection guide hole(62) is formed. An inner surface of the ejection guide hole (62) on the dielectric member (60) is protruded from an inner surface of the ejection port (41) on the ground electrode (40). On the dielectric member (60), a step surface (64) is extended as the same surface from an abutting surface (63) which abuts to the ground electrode (40).
Description
Technical field
The present invention relates to plasma treatment appts.
Background technology
For example, in patent documentation 1, record the plasma treatment appts that disposes pair of electrodes up and down relatively.The electrode of upside is connected with power supply and becomes electric field and applies electrode.The electrode of downside becomes grounding electrode electrical ground.Between these electrodes, apply electric field and produce Atomospheric pressure glow discharge, import simultaneously and handle gas and plasma.Be formed with the ejiction opening of slit-shaped at the grounding electrode of downside.From this ejiction opening above-mentioned processing gas is blown out downwards.Below grounding electrode, dispose object being treated.Produce by boasting from the processing gas of above-mentioned ejiction opening to this object being treated, carry out surface treatment.
Be formed with the solid dielectric layer that the sputtered films of bismuth by aluminium oxide constitutes at the upper surface (applying the relative opposite face of electrode) of grounding electrode with electric field.
Patent documentation 1:(Japan) spy opens the 2004-006211 communique
In the plasma treatment appts of above-mentioned structure,, then there is electric arc to drop on herein danger if the inner face of the ejiction opening of the grounding electrode that is made of metal is exposed.Particularly the electric field electric field that concentrates on ejiction opening applies the ora terminalis of electrode side, produce the stronger discharge of luminous intensity at its ora terminalis, or electric arc drops on herein.Like this, exist so-called metal impurities or particulate to produce and be attached to the problem of object being treated.
Summary of the invention
In order to solve above-mentioned problem, the present invention is following device, promptly, in discharge space, make and handle gas plasmaization and ejection, its object being treated with the object being treated configuration portion of the outside that is configured in described discharge space is contacted, carry out Surface Treatment with Plasma, it is characterized in that
Have:
Electric field applies electrode (thermode), and it is connected with power supply;
Grounding electrode (ground electrode), it has towards described electric field and applies the discharge face of electrode and towards the treated side of described object being treated configuration portion, and electrical ground;
The dielectric components of ground connection side, it is by applying electrode and the solid dielectric that forms described discharge space constitutes with the discharge face butt of described grounding electrode and towards described electric field,
Be formed with the ejection guide hole that is communicated with described discharge space at described dielectric components,
Be formed with at described grounding electrode and link to each other with described ejection guide hole and penetrate into the ejiction opening of described treated side from described discharge face,
The inner face of the described ejection guide hole in the described dielectric components is more outstanding to the radially inner side of ejiction opening than the ora terminalis of the described discharge face side of the inner face of the described ejiction opening in the described grounding electrode,
Described dielectric components has: bearing surface, the discharge face butt of itself and described grounding electrode; Cascaded surface, it prolongs and forms the ladder between the inner face of the inner face of described ejection guide hole and described ejiction opening from the neat face of this bearing surface.
Thus, the paradoxical discharge that can prevent electric arc etc. drops on the ora terminalis of discharge face side of the inner face of the ejiction opening in the grounding electrode, can stop the generation of metal impurities and particulate, and can stop these metal impurities or particulate to be attached to object being treated.
The size of described ejiction opening and shape can be constant in the perforation direction (thickness direction of grounding electrode) of this ejiction opening.Thus, not only can form ejiction opening easily, and can make the paradoxical discharge of electric arc etc. not only not drop on the ora terminalis of discharge side of the inner face of ejiction opening, also not drop on any place of inner face.
The size of described ejiction opening and shape can be constant in this perforation direction (thickness direction of dielectric components) that sprays guide hole.Thus, can form the ejection guide hole easily.
The size of the end of the described treated side side of described ejiction opening also can be littler than the size of the end of described discharge face side.Thus, the paradoxical discharge that can prevent electric arc etc. drops on the ora terminalis of discharge face side of inner face of the ejiction opening of grounding electrode, and can prevent to be involved in ejiction opening outside atmosphere, can also guarantee to handle the intensity of the ejection of gas, can improve treatment effeciency.
The size of described ejiction opening also can be along with diminishing smoothly near described treated side.Thus, can prevent the concentrated inner face that is created in ejiction opening of electric field, and can prevent the situation that paradoxical discharge falls reliably.
The size of the end of the described treated side side of described ejiction opening and shape also can be roughly the same with the size and the shape of described ejection guide hole.Thus, can prevent to be involved in outside atmosphere fully, can guarantee to handle the intensity of gas fully, and can prevent reliably that paradoxical discharge from dropping on the inner face of ejiction opening.
Preferably also having makes described dielectric components limit the position restriction mechanism of the position of described dielectric components in the admissible error with respect to described grounding electrode in the face parallel with described discharge face.Thus, can make dielectric components and grounded parts carry out thermal expansion independently of each other, and can prevent the dielectric components breakage by both differential expansions.
The described cascaded surface that described dielectric components is positioned under the entopic state is bigger than the tolerance of described error along the width of described projected direction.Thus, even exist the position error of dielectric components also can prevent the situation that paradoxical discharge falls reliably.
Can also have by with the described dielectric components insulator coating member that constitutes and be provided with in the mode of the inner face of the ejiction opening that covers described grounding electrode independently.Thus, can prevent more reliably that paradoxical discharge from dropping on the inner face of ejiction opening.
The thickness of described coating member is preferably roughly the same along the width of described projected direction with described cascaded surface.Thus, can make the inner face of dielectric ejection guide hole and the neat face of inwall of coating member, can prevent the breach in the bight etc. of coating member reliably, can prevent the generation of particulate.
The present invention is suitable for roughly near the plasma treatment of (under the normal pressure) under the atmospheric pressure.At this, what is called roughly is meant 1.013 * 10 near (roughly normal pressure) under the atmospheric pressure
4～50.663 * 10
4The scope of Pa is if consider the simplification of pressure adjustment or the summary of apparatus structure, then preferred 1.333 * 10
4～10.664 * 10
4Pa, more preferably 9.331 * 10
4～10.397 * 10
4Pa.
According to the present invention, the paradoxical discharge that can prevent electric arc etc. drops on the ora terminalis of discharge face side of inner face of the ejiction opening of grounding electrode, and can stop the generation particulate.
Description of drawings
Fig. 1 is a side cutaway view of representing the atmospheric plasma processes device that first execution mode of the present invention relates to along the I-I line of Fig. 2.
Fig. 2 is the main pseudosection along the processing head of the above-mentioned atmospheric plasma processes device of the II-II line of Fig. 1.
Fig. 3 is the exploded perspective view of above-mentioned processing head.
Fig. 4 (a) is the main pseudosection that amplifies the electrode part of the above-mentioned processing head of expression, (b) is the vertical view along the IVb-IVb line of (a).
Fig. 5 is illustrated in solid line to be staggered and situation about disposing in ground connection side dielectric components position, and represents the normal position with imaginary line, (a) is the amplification profile of above-mentioned electrode part, (b) is the vertical view along the Vb-Vb line of (a).
Fig. 6 (a) is the upward view of an example of the ejiction opening of the above-mentioned processing head of expression and the array structure that sprays guide hole.
Fig. 6 (b) is the upward view of an example of the ejiction opening of the above-mentioned processing head of expression and the array structure that sprays guide hole.
Fig. 7 represents the variation of the ejiction opening of above-mentioned electrode part, (a) is amplification profile, (b) is the vertical view along the VIb-VIb line of (a).
Fig. 8 is the amplification profile of variation of the ejiction opening of the above-mentioned electrode part of expression.
Fig. 9 is the amplification profile of variation of the ejiction opening of the above-mentioned electrode part of expression.
Figure 10 is the profile of variation of the ejection structure of the above-mentioned processing head of expression.
Figure 11 is the upward view of the variation of the ejiction opening of the above-mentioned processing head of expression and the shape that sprays guide hole.
Figure 12 is the ejiction opening of the above-mentioned processing head of expression and the upward view that sprays the variation of guide hole.
Figure 13 is the ejiction opening of the above-mentioned processing head of expression and the upward view that sprays the variation of guide hole.
Figure 14 is the ejiction opening of the above-mentioned processing head of expression and the upward view that sprays the variation of guide hole.
[symbol description]
The W object being treated
1 handles head
1a handles the space
The 1p discharge space
2 object being treated configuration portions
3 power supplys
20 frameworks (position restriction mechanism)
30 electric fields apply electrode
40 base plates (grounding electrode)
41 ejiction openings
The ora terminalis of the discharge face side of 41a ejiction opening
The ora terminalis of the treated side side of 41b ejiction opening
42 discharge faces
43 treated sides
60 ground connection side dielectric components
62 ejection guide holes
63 bearing surfaces
64 cascaded surfaces
70 coating members
Embodiment
Below, embodiments of the present invention are described with reference to the accompanying drawings.
Fig. 1～Fig. 3 is the figure of expression first execution mode of the present invention.The atmospheric plasma processes device has handles 1 and object being treated configuration portion 2.Object being treated configuration portion 2 is made of workbench or conveying equipment, and its upside disposes object being treated W.Object being treated W for example is glass substrate or semiconductor substrate.
Object being treated configuration portion 2 can carry object being treated W to the paper orthogonal direction of Fig. 1.Both can carry out fixed-site, processing 1 a paper orthogonal direction along Fig. 1 is moved object being treated.
As shown in Figure 3, framework 20 has a pair of long margin frame frame portion 21 and pair of short edges frame section 22, becomes the rectangle of overlooking of inside opening.Long margin frame frame portion 21 constitutes and handles a long limit of 1.Minor face frame section 22 constitutes handles a minor face of 1.The circumference that cover unit 10 is arranged in the upper surface mounting of framework 20.As shown in Figure 2, lag bolt 91 is vertically connected cover unit 10 and is screwed into framework 20.By bolt 91, cover unit 10 and framework 20 are linked.Cover unit 10 covers the inner space of framework 20 from upside.
Be formed with gas respectively in a pair of long margin frame frame portion 21 and import road 20a.Gas imports road 20a and extends along a length direction of handling 1.The regulate the flow of vital energy gas of body source 4 of getting along alone is in the future supplied with road 4a and is linked to each other with the end that gas imports road 20a.Gas introduction port 20b imports the side branch of road 20a from gas.Gas introduction port 20b is provided with a plurality of at the bearing of trend (the paper orthogonal direction of Fig. 2) that gas imports road 20a with going up devices spaced apart.Each gas introduction port 20b arrives the medial surface and the opening of long margin frame frame portion 21.
In addition, accumulate to have in above-mentioned processing gas source 4 and handle gas accordingly with processing intent.
Import road 20a in gas inside and be formed with ground connection side cooling road 20c by downside than framework 20.Cool off road 20c by coolant in the ground connection side from coolant feed mechanism (diagram is omitted).For example make water as coolant.
Be provided with electric field in the inside of handling 1 and apply side dielectric components 50.Dielectric components 50 has base plate 51 and pair of sidewalls portion 52,52 integratedly.Base plate 51 is extended handling on 1 the length direction.Pair of sidewalls portion 52,52 projects upwards from the both side edges of the short side direction of base plate 51.Make up above-mentioned base plate 51 and side wall portion 52,52, make the section of dielectric components 50 become roughly U word shape.
The discharge that base plate 51 is configured in electrode 30 generates face and plays the effect that conduct makes the dielectric layer of discharge stabilization, independently can separate with electrode 30.
As shown in Figure 2, between pair of sidewalls portion 52 and long margin frame frame portion 21, be formed with a counter-lateral quadrents gap 1c.Gas introduction port 20b links to each other with the upper end of each sidepiece gap 1c.
Bolt 93 (Fig. 2) vertically connects cover unit 10 and is screwed into side wall portion 52.By bolt 93, cover unit 10 and dielectric components 50 are linked.
Contain electric field in the inside of dielectric components 50 and apply electrode 30.Electrode 30 is made of the metal of stainless steel or aluminium etc.Electrode 30 be make length direction towards the left and right directions of Fig. 1 (with a length direction of handling 1 be equidirectional) and make the tabular of short side direction towards the paper orthogonal direction of Fig. 1.As shown in Figure 2, electrode 30 is connected with power supply 3 via supply lines 3a.These electrode 30 mountings are in the upper surface of the base plate 51 of dielectric components 50.Thus, the lower surface of electrode 30 (electric field applies the side discharge face) is covered by the board 51 as the solid dielectric layer.
Be formed with electric field in the inside of electrode 30 and apply side cooling road 32c.Cooling road 32c extends along the length direction of electrode 30.Cooling off road 32c by coolant from not shown coolant feed mechanism.For example make water as coolant.
As shown in Figure 1, between the both ends of the surface of the length direction of electrode 30 and minor face frame section 22, be provided with pill 35.Pill 35 is made of the pottery (insulator) of aluminium oxide etc.Utilize pill 35 to make electrode 30 and framework 20 insulation.
Between the both ends of the surface of the length direction of electrode 30 and pill 35, be provided with the plurality of gaps of the extensional of allowing electrode 30.Pill 35 applies the seam of side dielectric components 50 by fillings fully such as binding agents with electric field.
As shown in Figure 2, the side wall portion 52 of the two sides of the short side direction of electrode 30 and dielectric components 50 is opposed.Between these electrodes 30 and side wall portion 52, be formed with sidepiece clearance for insulation 1d.
Above electrode 30, be coated with cover unit 10.Between electrode 30 and cover unit 10, be formed with top clearance for insulation 1e.Top clearance for insulation 1e links to each other mutually with sidepiece clearance for insulation 1d.
As Fig. 1～shown in Figure 3, be provided with base plate 40 in a bottom of handling 1.Base plate 40 for make length direction towards the left and right directions of Fig. 1 (with a length direction of handling 1 be equidirectional) make the tabular of short side direction towards the paper orthogonal direction of Fig. 1.The lower surface butt of the circumference of base plate 40 and framework 20, and long slightly bolt 92 (Fig. 2) vertically connects cover unit 10 and framework 20, and be screwed into the circumference of base plate 40.By bolt 92, base plate 40 and framework 20 are linked.Base plate 40 covers the inner space of framework 20 from downside.
The upper surface of grounding electrode 40 become towards electric field apply electrode 30 ground connection side discharge face 42 (and electric field apply the face that should produce discharge between the electrode 30).
Grounding electrode 40 and object being treated configuration portion 2 and then opposed with object being treated W, and and object being treated W between form and handle space 1a.The lower surface of grounding electrode 40 (and face of discharge face 42 opposition sides) becomes towards the treated side 43 of object being treated W (and constituting the face of handling space 1a between the object being treated).
Discharge face (upper surface) 42 at grounding electrode 40 is provided with ground connection side dielectric components 60.Dielectric components 60 is made of the pottery (solid dielectric) of aluminium oxide etc.Dielectric components 60 becomes along the tabular of extending in the same way with grounding electrode 40.Dielectric components 60 covers the discharge face 42 of grounding electrode 40, and as the dielectric layer of discharge stabilization is worked.
As shown in Figure 1, the two ends edge at the length direction of dielectric components 60 is formed with the protuberance 61 that projects upwards respectively.Protuberance 61 extends along the ora terminalis of the length direction of dielectric components 60.There is above-mentioned electric field to apply the both ends of length direction of the base plate 51 of side dielectric components 50 in these protuberance 61 mountings.
Apply at electric field between the base plate 51 and ground connection side dielectric components 60 of side dielectric components 50, be formed with narrow underclearance 1b.As described below, the central portion of this underclearance 1b becomes discharge space 1p.The upper surface of ground connection side dielectric components 60 applies side dielectric components 50 and even electric field applies electrode 30 towards electric field.The upper surface of ground connection side dielectric components 60 becomes the formation face that constitutes discharge space 1p.As shown in Figure 2, the both ends of the short side direction of underclearance 1b link to each other respectively with the bottom of sidepiece gap 1c.
Illustrate and handle an ejection structure of 1.
Be formed with a plurality of ejection guide holes 62 at ground connection side dielectric components 60.Ejection guide hole 62 connects at thickness direction to lower surface (by the face of grounding electrode 40 coverings) from the upper surface (the formation face of discharge space 1p) of dielectric components 60.Ejection guide hole 62 links to each other with discharge space 1p.The size and the shape of ejection guide hole 62 go up constant in perforation direction (above-below direction).For example, ejection guide hole 62 becomes the circular section of the constant dimensions about diameter 1mm.
Be formed with a plurality of ejiction openings 41 at grounding electrode 40.Ejiction opening 41 connects at thickness direction to lower surface (treated side 43) from the upper surface (discharge face 42) of grounding electrode 40.The size of ejiction opening 41 and shape become constant along connecting direction (above-below direction).For example, ejiction opening 41 becomes the circular section of the constant dimensions about diameter 3mm.Ejiction opening 41 to be arranging with the corresponding one to one mode of the ejection guide hole 62 of ground connection side dielectric components, and link to each other with corresponding ejection guide hole 62 respectively and with handle space 1a and link to each other.
Shown in Fig. 4 (a) amplified, each ejiction opening 41 was bigger than ejection guide hole 62.The inner face of ejection guide hole 62 is than interior radially interior side-prominent towards ejiction opening 41 of ejiction opening 41.The lower surface of dielectric components 60 comprises bearing surface 63, cascaded surface 64.Bearing surface 63 is to join with the discharge face 42 of grounding electrode 40 in the lower surface of dielectric components 60 and the part that contacts.Cascaded surface 64 constitutes the plane identical with bearing surface 63, prolongs to the neat face of the radially inner side of ejiction opening 41 ground from bearing surface 63.Ladder between the inner face of cascaded surface 64 formation ejection guide holes 62 and the inner face of ejiction opening 41.Cascaded surface 64 becomes along the ring-type of the periphery of ejiction opening 41 and ejection guide hole 62.Shown in Fig. 4 (b), if (electric field applies electrode 30 sides) observes from the top, then the peripheral part of the ejection guide hole 62 of dielectric components 60 spreads all over the last ora terminalis 41a (ora terminalis of discharge face 42 sides) that complete cycle ground covers the ejiction opening 41 of grounding electrode 40.
The diameter of ejiction opening 41 is preferably about the big 0.5～4mm of diameter than ejection guide hole 62, about more preferably big 2mm.
The width w1 of cascaded surface 64 (from the overhang of the ora terminalis of ejiction opening 41) is about w1=1mm.The width w1 of cascaded surface 64 is than the tolerance d1 of the position error of dielectric components 60 (＜1mm) big (w1＞d1).
Illustrate and handle an assembling sequence of 1.
At base plate is the top Configuration Framework 20 of grounding electrode 40.Accommodate ground connection side dielectric components 60 in the inboard of framework 20.This dielectric components 60 of upper surface 42 mountings at grounding electrode 40.Thus, the ejection guide hole 62 of dielectric components 60 is communicated with the ejiction opening 41 of grounding electrode 40.The inner face of ejection guide hole 62 is more outstanding to the inside than the inner face of ejiction opening 41, is formed with ladder 64 each other at the inner face of these ejection guide holes 62 and the inner face of ejiction opening 41.Between dielectric components 60 and framework 20, be set with the gap, can accommodate dielectric components 60 easily.Because the minimum (d1＜1mm), therefore can roughly correctly locate dielectric components 60 in this gap with respect to grounding electrode 40.Shown in Fig. 5 (a), even there is the position error of dielectric components 60, (d1＜w1), the complete cycle that therefore sprays the inner face of guide hole 62 is necessarily given prominence to the inside than the inner face of ejiction opening 41 because the width w1 (Fig. 4 (a)) of the cascaded surface 64 of the tolerance d1 of error ratio under normal positioning states is little.Therefore, shown in Fig. 5 (b), observe from upside, the complete cycle of the last ora terminalis 41a of ejiction opening 41 is necessarily by the circumference covering of the ejection guide hole 62 of dielectric components 60.
Moreover, electric field is applied the inside that side dielectric components 50 inserts framework 20.Make this electric field apply the both ends mounting of length direction of side dielectric components 50 on protuberance 61.Apply at electric field that the mounting electric field applies electrode 30 on the base plate 51 of side dielectric components 50.Apply the both ends configurating terminal sheet 35 of the length direction of electrode 30 at electric field.Pill 35 applies the seam of side dielectric components 50 by fillings fully such as binding agents with electric field.
Next, cover unit 10 is covered on the parts 20,30,50, by lag bolt 91 framework 20 is fixed in cover unit 10, grounding electrode 40 is fixed in framework 20, with the bolt 93 of intermediate length electric field is applied side dielectric components 50 and be fixed in cover unit 10 with stay bolt 92.Because it is fastening that these bolts 91,92,93 all towards equidirectional (vertically), therefore need not to carry out simultaneously, and can carry out bolted in any order easily.
When carrying out surface treatment, object being treated is placed on the object being treated configuration portion 2 with the plasma treatment appts of said structure.
Then, get along alone in the future the regulate the flow of vital energy processing gas of body source 4 is supplied with road 4a via gas and is imported road 20a to the gas of handling 1 and supply with.This processing gas flows into to sidepiece gap 1c equably from a plurality of gas introduction port 20b, and further imports to underclearance 1b.
Carry out simultaneously applying electrode 30 service voltages to electric field from power supply 3.Thus, apply between electrode 30 and the grounding electrode 40 at electric field and to produce Atomospheric pressure glow discharge, the central portion of underclearance 1b becomes discharge space 1p, with the processing gas of this space 1p by plasma (comprise decomposition, excitation, activate, intensify, ionization).
Make processing gas after the plasma via ejection guide hole 62 from ejiction opening 41 processing space 1a ejection downwards, and contact with object being treated W.Thus, produce reaction, carry out desirable surface treatment on the surface of object being treated W.Moreover, by about scanning object being treated configuration portion 2, can handle the integral body of object being treated W.
Because the inner face of the ejection guide hole 62 of ground connection side dielectric components 60 is more outstanding to the inside than the inner face of the ejiction opening 41 of grounding electrode 40, observe if therefore apply electrode 30 sides from electric field, then the circumference of the ejection guide hole 62 of dielectric components 60 covers the inner face of ejiction opening 41.Therefore, the paradoxical discharge that can prevent electric arc etc. drop on ejiction opening 41 inner face particularly go up ora terminalis 41a.As shown in Figure 5, even there is the position error of dielectric components 60, the complete cycle of the last ora terminalis 41a of ejiction opening 41 is also necessarily covered by dielectric components 60.Thus, can prevent paradoxical discharge reliably.Thus, can stop the generation of metal impurities and particulate, and can prevent that these metal impurities and particulate are attached to object being treated W.
Next, another embodiment of the present invention is described.Structure about having stated adds same numeral and suitably omits explanation at accompanying drawing in the following embodiments.
Fig. 7 is the figure of variation of the shape of expression ejiction opening 41.Shown in this figure (a), in this variation, the internal diameter of the last ora terminalis 41a of the ejiction opening 41 in the grounding electrode 40 becomes bigger than the internal diameter of ejection guide hole 62, and ejiction opening 41 becomes the cone-shaped of downward undergauge.Therefore, the size of ejiction opening 41 is along with diminishing smoothly near the lower surface (treated side 43) of grounding electrode 40.The internal diameter of the following ora terminalis 41b of ejiction opening 41 (size of the end of treated side 43 sides) is littler than the internal diameter (size of the end of discharge face 42 sides) of last ora terminalis 41a.
Moreover shown in Fig. 7 (b), the internal diameter of the following ora terminalis 41b of ejiction opening 41 is identical with the internal diameter of ejection guide hole 62.That is, the size of the end 41b of the treated side side of ejiction opening 41 and shape are roughly consistent with the size and the shape of ejection guide hole 62.
Thus, the paradoxical discharge that can prevent electric arc etc. drops on particularly up and down ora terminalis 41a, the 41b of the inner face of ejiction opening 41, and can prevent that outside atmosphere is involved in ejiction opening 41.And then, carried out the processing gas after the plasma at discharge space 1p and during by ejiction opening 41, be extruded at once via ejection guide hole 62, can spray with sudden force from ejiction opening 41.Its result can improve treatment effeciency.
As shown in Figure 8, also ejiction opening 41 can be replaced with taper hole 41, make the part 44 of the upside (discharge face side) of ejiction opening 41 be major diameter, make the part 45 of the downside (treated side side) of ejiction opening 41 be minor diameter, between upper portion 44 and lower portion 45, form ladder 46, and make ejiction opening 41 for stepped.Upper portion 44 is bigger than ejection guide hole 62 diameters.Lower portion 45 and ejection guide hole 62 roughly the same diameters.
In variation shown in Figure 9, in that (Fig. 1～Fig. 5) inner face of identical ejiction opening 41 is provided with coating member 70 (sleeve) with first execution mode.Coating member 70 is by constituting with the independent insulator of ground connection side dielectric components 60.Become the preferred anti-isoiony of insulator and the high material of thermal endurance of coating member 70, preference such as fluorine resin, quartz, glass etc.
Coating member 70 becomes barrel shape.The inner face of the outer peripheral face of coating member 70 and ejiction opening 41 connects airtight.
The thickness of coating member 70 is identical with the width w1 of cascaded surface 64.Therefore, the inner peripheral surface of coating member 70 and the neat face of inner face that sprays guide hole 62.The inner space of coating member 70 links to each other with ejection guide hole 62 in the ejiction opening 41.The processing gas that has carried out plasma at discharge space 1p sprays via the inner space of ejection guide hole 62 by coating member 70.
According to this form,, therefore can prevent paradoxical discharge more reliably because the inner-surface coated cover 70 that is made of metal of the ejiction opening 41 of grounding electrode 40 covers.Because the inner peripheral surface of coating member 70 becomes the neat face of inner face with ejection guide hole 62, therefore can prevent the particulate generation from the last ora terminalis of the inner peripheral surface of coating member 70 etc.
As shown in figure 10, also can be only ejiction opening 41 and ejection guide hole 62 be separately positioned on the central portion of the Width of grounding electrode 40 and dielectric components 60.
If consider processability etc., then the section shape of ejiction opening 41 is preferably just round, but is not limited thereto, and can be ellipse or Long Circle, also can be for square grade polygon-shaped, also can be slit-shaped.
In execution mode shown in Figure 11, ejiction opening 41 and ejection guide hole 62 are the slotted hole shape.The major diameter of ejiction opening 41 and ejection guide hole 62 is each other towards equidirectional (at this for handling a length direction of 1).The major diameter of the draw ratio ejection guide hole 62 of ejiction opening 41 is big.The minor axis of ejiction opening 41 is bigger than the minor axis of ejection guide hole 62.The integral body of the inner space of ejection guide hole 62 links to each other with ejiction opening 41.Between the inner face of the inner face of ejiction opening 41 and ejection guide hole 62, be formed with cascaded surface 64.Cascaded surface 64 becomes long ring-type along the periphery of ejiction opening 41 and ejection guide hole 62.The ejiction opening 41 of a plurality of slotted hole shapes and ejection guide hole 62 form a line along a length direction of handling 1.Stagger along a length direction of handling 1 each other along the row of adjacent ejiction opening 41 of a short side direction of handling 1 and ejection guide hole 62, but these row each other also can be along a length direction alignment of handling 1.
In execution mode shown in Figure 12, ejiction opening 41 and ejection guide hole 62 become the slit-shaped of fully extending to a length direction of handling 1 than the slotted hole shape ejiction opening 41 of Figure 11 and ejection guide hole 62.The length of slit-shaped ejiction opening 41 is longer than the length of slit-shaped ejection guide hole 62.The width of slit-shaped ejiction opening 41 is bigger than the width of slit-shaped ejection guide hole 62.The integral body of the inner space of slit-shaped ejection guide hole 62 links to each other with slit-shaped ejiction opening 41.Between the inner face of the inner face of slit-shaped ejiction opening 41 and slit-shaped ejection guide hole 62, be formed with cascaded surface 64.Cascaded surface 64 becomes long ring-type along the ejiction opening 41 of slit-shaped and the periphery of ejection guide hole 62.
The ejiction opening 41 of slit-shaped and ejection guide hole 62 only dispose one group in the central authorities that handle a short side direction of 1, but also the ejiction opening 41 of a plurality of slit-shaped and ejection guide hole 62 can be configured along a short side direction devices spaced apart of handling 1.
As shown in figure 13, the ejiction opening 41 of slotted hole shape and even slit-shaped and ejection guide hole 62 are extended along a short side direction of handling 1.In Figure 13, a plurality of ejiction openings 41 and ejection guide hole 62 extend and are spaced from each other at interval at a length direction of handling 1 along a short side direction of handling 1 respectively and be configured.
As shown in figure 14, also can make the ejiction opening 41 of slotted hole shape and even slit-shaped and ejection guide hole 62 with respect to a length direction and a short side direction diagonally extending of handling 1.In Figure 14, it is a plurality of along a length direction devices spaced apart configuration of handling 1 to become the ejiction opening 41 of inclination and ejection guide hole 62.
The present invention is not limited to above-mentioned execution mode, and can carry out various changes in the scope that those skilled in the art understand.
For example, the section shape of ejection guide hole 62 preferably with the section shape similar shapes of ejiction opening 41, but as long as grounding electrode 40 does not expose to the inboard of ejection guide hole 62 in vertical view, then spray guide hole 62 and also can be the shape different with ejiction opening 41.
Also can replace the situation that framework 20 is used as the position restriction mechanism of dielectric components 60, and protuberance etc. is set at grounding electrode 40 or dielectric components 50, and this protuberance used as position restriction mechanism that the position of dielectric components 60 is limited, also the parts of the special use that is used for the position of dielectric components 60 is limited can be packed into as position restriction mechanism and handle 1.
Also a plurality of execution modes reciprocally can be made up.For example, shown in the execution mode of Fig. 7, also can make the slotted hole shape of Figure 11～Figure 14 or the ejiction opening 41 downward narrowed width of slit-shaped.Also can in the ejiction opening 41 of above-mentioned slotted hole shape or slit-shaped, look like shown in the execution mode of Fig. 8 and form ladder.Also can embed the coating member (with reference to Fig. 9) of the insulating properties of long ring-type at the ejiction opening 41 of above-mentioned slotted hole shape or slit-shaped, the complete cycle of the inner peripheral surface of the coating member of this long ring-type also can with the neat face of inner peripheral surface of the ejection guide hole 62 of slotted hole shape or slit-shaped.The present invention can be applicable to the various surface treatments of cleaning, surfaction (hydrophiling, hydrophobization etc.), etching, film forming etc.Be not limited to also can be applicable to the plasma treatment under vacuum near the plasma treatment under the atmospheric pressure.
Industrial utilizability
This invention can be applicable to glass substrate that for example FPD is used or the manufacturing of semiconductor substrate Surface treatment in the operation.
Claims (8)
1. plasma treatment appts, it makes in discharge space handles gas plasmaization and ejection, and processing gas is contacted with the object being treated of the object being treated configuration portion that is configured in described discharge space outside, carries out Surface Treatment with Plasma, it is characterized in that having:
Electric field applies electrode, and it is connected with power supply;
Grounding electrode, it has towards described electric field and applies the discharge face of electrode and towards the treated side of described object being treated configuration portion, and electrical ground connection;
Dielectric components, it is made of solid dielectric, and the discharge face butt of described solid dielectric and described grounding electrode and apply electrode towards described electric field and form described discharge space,
Be formed with the ejection guide hole that links to each other with described discharge space at described dielectric components,
Be formed with at described grounding electrode and link to each other with described ejection guide hole and penetrate into the ejiction opening of described treated side from described discharge face,
The inner face of the described ejection guide hole in the described dielectric components is more outstanding to the radially inner side of ejiction opening than the ora terminalis of the described discharge face side of the inner face of the described ejiction opening in the described grounding electrode,
Described dielectric components has: bearing surface, the discharge face butt of itself and described grounding electrode; Cascaded surface, it prolongs and forms the ladder between the inner face of the inner face of described ejection guide hole and described ejiction opening from the neat face of this bearing surface.
2. plasma treatment appts according to claim 1 is characterized in that,
The size of described ejiction opening and shape are constant on the perforation direction of this ejiction opening.
3. plasma treatment appts according to claim 1 is characterized in that,
Described ejiction opening is littler in the size at the place, end of described discharge face side than described ejiction opening in the size at the place, end of described treated side.
4. plasma treatment appts according to claim 3 is characterized in that,
The size of described ejiction opening is along with diminishing smoothly near described treated side.
5. according to claim 3 or 4 described plasma treatment appts, it is characterized in that,
The size that described ejiction opening is located in the end of described treated side side and the size and the shape of shape and described ejection guide hole are roughly the same.
6. according to each described plasma treatment appts in the claim 1～5, it is characterized in that,
Also have position restriction mechanism, it limits described dielectric components in admissible error with respect to described grounding electrode in the face parallel with described discharge face position,
The described cascaded surface that described dielectric components is positioned under the entopic state is bigger than the tolerance of described error along the width of described projected direction.
7. plasma treatment appts according to claim 1 is characterized in that,
Also have coating member, its by with described dielectric components independently insulator constitute, and be provided with in the mode of the inner face of the ejiction opening that covers described grounding electrode.
8. plasma treatment appts according to claim 7 is characterized in that,
The thickness of described coating member and described cascaded surface are roughly the same along the width of described projected direction.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007082049 | 2007-03-27 | ||
| JP082049/2007 | 2007-03-27 |
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| CN101658076A true CN101658076A (en) | 2010-02-24 |
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| CN200880009956A Pending CN101658076A (en) | 2007-03-27 | 2008-03-21 | Plasma processing apparatus |
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| JP (1) | JPWO2008123142A1 (en) |
| KR (1) | KR101087445B1 (en) |
| CN (1) | CN101658076A (en) |
| TW (1) | TW200904262A (en) |
| WO (1) | WO2008123142A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103021772A (en) * | 2011-09-21 | 2013-04-03 | 日新离子机器株式会社 | Electrode frame and charged particle beam generator with the same |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102009044932A1 (en) * | 2009-09-24 | 2011-04-07 | Fachhochschule Hildesheim/Holzminden/Göttingen - Körperschaft des öffentlichen Rechts - | Apparatus for treating objects with a physical plasma at atmospheric pressure |
| JP5328685B2 (en) * | 2010-01-28 | 2013-10-30 | 三菱電機株式会社 | Plasma processing apparatus and plasma processing method |
| JP6026079B2 (en) * | 2011-03-01 | 2016-11-16 | マイクロプラズマ株式会社 | Plasma electrode |
| EP2756515B1 (en) | 2011-09-15 | 2018-04-11 | Cold Plasma Medical Technologies, Inc. | Cold plasma treatment device and associated method |
| WO2017044754A1 (en) * | 2015-09-11 | 2017-03-16 | Applied Materials, Inc. | Plasma module with slotted ground plate |
| US10840065B2 (en) * | 2016-12-05 | 2020-11-17 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Active gas generation apparatus including a metal housing, first and second auxiliary members, and a housing contact |
| JP6719856B2 (en) * | 2018-01-10 | 2020-07-08 | 東芝三菱電機産業システム株式会社 | Active gas generation device and film formation processing device |
| WO2019138456A1 (en) * | 2018-01-10 | 2019-07-18 | 東芝三菱電機産業システム株式会社 | Active gas generation device |
| JP7328500B2 (en) * | 2019-03-27 | 2023-08-17 | 株式会社ニデック | Atmospheric plasma processing equipment |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08227874A (en) * | 1995-02-21 | 1996-09-03 | Mitsubishi Electric Corp | Vacuum processing device and method |
| JPH0967685A (en) * | 1995-08-25 | 1997-03-11 | Souzou Kagaku:Kk | Parallel flat plate electrode for plasma etching |
| US6334983B1 (en) * | 1997-04-11 | 2002-01-01 | Tokyo Electron Limited | Processing system |
| JPH1154296A (en) * | 1997-08-05 | 1999-02-26 | Sony Corp | Plasma generator and plasma device |
| JP3050498U (en) * | 1998-01-12 | 1998-07-14 | 信越化学工業株式会社 | Electrode plate for plasma device |
| JP4145457B2 (en) * | 2000-02-08 | 2008-09-03 | 信越化学工業株式会社 | Electrode plate for plasma etching equipment |
| JP5021877B2 (en) | 2001-09-27 | 2012-09-12 | 積水化学工業株式会社 | Discharge plasma processing equipment |
| JP4579522B2 (en) * | 2003-09-29 | 2010-11-10 | 株式会社イー・スクエア | Plasma surface treatment equipment |
| US20050223986A1 (en) | 2004-04-12 | 2005-10-13 | Choi Soo Y | Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition |
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2008
- 2008-03-21 KR KR1020097019106A patent/KR101087445B1/en not_active IP Right Cessation
- 2008-03-21 WO PCT/JP2008/055278 patent/WO2008123142A1/en active Application Filing
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|---|---|---|---|---|
| CN103021772A (en) * | 2011-09-21 | 2013-04-03 | 日新离子机器株式会社 | Electrode frame and charged particle beam generator with the same |
| CN103021772B (en) * | 2011-09-21 | 2016-03-23 | 日新离子机器株式会社 | Electrode framework and possess the charged particle beam generating means of this electrode framework |
Also Published As
| Publication number | Publication date |
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| KR20090108738A (en) | 2009-10-16 |
| WO2008123142A1 (en) | 2008-10-16 |
| TW200904262A (en) | 2009-01-16 |
| JPWO2008123142A1 (en) | 2010-07-15 |
| KR101087445B1 (en) | 2011-11-25 |
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